# Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 220 mA, 220 mA, 0.75 ohm

![Product image](https://novapart.co/image/farnell:2533207RL/)

**URL**: https://novapart.co/products/NTUD3169CZT5G/dual-mosfet-complementary-n-and-p-channel-20-v-220
**SKU**: NTUD3169CZT5G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || FETs || Dual MOSFETs
**Price**: €0.1050
**Stock**: 1000+
**Lead Time**: 148 days (indicative)

## Description

Transistor Polarity:N and P Complement; Continuous Drain Current Id:220mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.75ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold V

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Channel Type | Complementary N and P Channel |
| Product Range | - |
| Qualification | - |
| Transistor Case Style | SOT-963 |
| Operating Temperature Max | 150°C |
| Power Dissipation N Channel | 125mW |
| Power Dissipation P Channel | 125mW |
| Drain Source Voltage Vds N Channel | 20V |
| Drain Source Voltage Vds P Channel | 20V |
| Continuous Drain Current Id N Channel | 220mA |
| Continuous Drain Current Id P Channel | 220mA |
| Drain Source On State Resistance N Channel | 0.75ohm |
| Drain Source On State Resistance P Channel | 0.75ohm |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2533207RL/)

## NTUD3169CZ 

## MOSFET – Small Signal, Complementary, SOT-963, 1.0 x 1.0 mm 

## 20 V, 220 mA / -200 mA 

## **www.onsemi.com** 

## **Features** 

- Complementary MOSFET Device 

- Offers a Low R Solution in the Ultra Small 1.0x1.0 mm DS(on) 

- Package 

- 1.5 V Gate Voltage Rating 

- Ultra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely Thin Environments such as Portable Electronics. 

- This is a Pb−Free Device 

## **Applications** 

- Load Switch with Level Shift 

|**V(BR)DSS**|**RDS(on) Max**|**ID Max**|
|---|---|---|
|N−Channel<br>20 V|1.5  @ 4.5 V|0.22 A|
||2.0  @ 2.5 V||
||3.0  @ 1.8 V||
||4.5  @ 1.5 V||
|P−Channel<br>20 V|5.0  @ −4.5 V|−0.2 A|
||6.0  @ −2.5 V||
||7.0  @ −1.8 V||
||10  @ −1.5 V||



- Optimized for Power Management in Ultra Portable Equipment 

## **PINOUT: SOT−963** 

**MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise specified) 

|**MAXIMUM RATINGS**(TJ = 25J = 25= 25°C unless otherwise specified)|**MAXIMUM RATINGS**(TJ = 25J = 25= 25°C unless otherwise specified)|**MAXIMUM RATINGS**(TJ = 25J = 25= 25°C unless otherwise specified)|C unless otherwise specified)|C unless otherwise specified)||
|---|---|---|---|---|---|
|**Parameter**<br>~~es~~<br>~~es~~|||**Symbol**<br>~~es~~<br>~~ee~~<br>~~es~~<br>~~es~~|**Value**<br>~~es~~<br>~~es~~<br>~~es~~|**Unit**<br>~~es~~<br>~~es~~|
|Drain−to−Source Voltage<br>~~es~~<br>~~es~~|||VDSS<br>~~ee~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~es~~|20<br>~~es~~<br>~~es~~<br>~~es~~<br>~~es~~|V<br>~~es~~<br>~~es~~|
|Gate−to−Source Voltage<br>~~es~~|||VGS<br>~~es~~<br>~~es~~<br>~~es~~|±8<br>~~es~~<br>~~es~~<br>~~es~~|V<br>~~es~~|
|N−Channel<br>Continuous Drain<br>Current (Note 1)|Steady<br>State<br>~~eo~~<br>~~|~~<br>~~ee~~|TA=  25°C<br>~~eo~~<br>~~|~~|ID<br>~~es ~~<br>~~eo~~<br>~~ee~~<br>~~||~~<br>~~ee~~<br>~~eH~~|220<br> ~~es~~<br>~~eo~~<br>~~**||**~~|mA<br>~~eH~~|
|||TA=  85°C<br>~~eo~~<br>~~|~~<br>~~ee~~||160<br>~~eo~~<br>~~**||**~~||
||t<br>5 s<br>~~|~~<br>~~ee~~|TA=  25°C<br>~~|~~<br>~~ee~~||280<br>~~**||**~~||
|P−Channel<br>Continuous Drain<br>Current (Note 1)<br>~~eH~~|Steady<br>State<br>~~|~~<br>~~ee~~<br>~~pF~~<br>~~|~~<br>~~ee~~|TA=  25°C<br>~~|~~<br>~~ee~~<br>~~pF~~<br>~~|~~||−200<br>~~**||**~~<br>~~||~~<br>~~**||**~~||
|||TA=  85°C<br>~~pF~~<br>~~|~~||−140<br>~~||~~<br>~~**||**~~||
||t<br>5 s<br>~~pF~~<br>~~|~~<br>~~ee~~<br>~~eH~~|TA=  25°C<br>~~pF~~<br>~~|~~<br>~~ee~~<br>~~eH~~||−250<br>~~||~~<br>~~**||**~~<br>~~eH~~||
|Power Dissipation<br>(Note 1)<br>~~eH~~<br>~~PE~~|Steady<br>State<br>~~|~~<br>~~ee~~<br>~~eH~~|TA=  25°C<br>~~|~~<br>~~ee~~<br>~~eH~~<br>~~tt~~|PD<br>~~ee~~<br>~~eH~~<br>~~tt~~|125<br>~~**||**~~<br>~~eH~~|mW<br>~~eH~~|
||t<br>5 s<br>~~eH~~<br>~~PE~~|||200<br>~~eH~~||
|Pulsed Drain Current<br>~~PE~~|N−Channel<br>~~PE~~|tp= 10 s<br>~~tt~~|IDM<br>~~tt~~|800|mA|
||P−Channel<br>~~PE~~|||−600||
|Operating Junction and Storage Temperature<br>~~PE~~<br>~~tt~~<br>~~eo~~|||TJ,<br>TSTG<br>~~tt~~<br>~~eo~~|−55 to<br>150<br>~~eo~~|°C<br>~~eo~~|
|Source Current (Body Diode) (Note 2)<br>~~eo~~|||IS<br>~~eo~~|200<br>~~eo~~|mA<br>~~eo~~|
|Lead Temperature for Soldering Purposes<br>(1/8” from case for 10 s)<br>~~tT~~|||TL<br>~~tT~~|260<br>~~tT~~|°C<br>~~tT~~|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. Surface−mounted on FR4 board using the minimum recommended pad size, 1 oz. Cu. 

2. Pulse Test: pulse width < 300 s, duty cycle u < 2% 

**==> picture [148 x 208] intentionally omitted <==**

**----- Start of picture text -----**<br>
S1 1 6 D1<br>G1 2 5 G2<br>D2 3 4 S2<br>Top View<br>MARKING<br>DIAGRAM<br>; 2 M<br>SOT−963<br>1<br>CASE 527AD<br>2 = Specific Device Code =<br>M = Date Code<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|NTUD3169CZT5G|SOT−963<br>(Pb−Free)|8000 /<br>Tape & Reel|



- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

Publication Order Number: **NTUD3169CZ/D** 

**1** 

© Semiconductor Components Industries, LLC, 2008 **June, 2019 − Rev. 1** 

**NTUD3169CZ** 

## **THERMAL RESISTANCE RATINGS** 

|**THERMAL RESISTANCE RATINGS**||||
|---|---|---|---|
|**Parameter**|**Symbol**|**Max**|**Unit**|
|Junction−to−Ambient – Steady State, Minimum Pad (Note 3)|R�JA|1000|°C/W|
|Junction−to−Ambient – t�5 s (Note 3)||600||



3. Surface−mounted on FR4 board using the minimum recommended pad size, 1 oz. Cu. 

## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) 

|**ELECTRICAL CHARACTERISTI**|**CS**(TJ= 25°C|unless|otherwise specified)|otherwise specified)|||||
|---|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**N/P**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**|||||||||
|Drain−to−Source Breakdown Voltage|V(BR)DSS|N|VGS=  0 V|ID= 250�A|20|||V|
|||P||ID= −250�A|−20||||
|Zero Gate Voltage Drain Current|IDSS|N|VGS= 0 V, VDS= 5.0 V|TJ= 25°C|||50|nA|
|||||TJ= 85°C|||200||
|||P|VGS= 0 V, VDS= −5.0 V|TJ= 25°C|||−50||
|||||TJ= 85°C|||−200||
|Zero Gate Voltage Drain Current|IDSS|N|VGS= 0 V, VDS= 16 V|TJ= 25°C|||100|nA|
|||P|VGS= 0 V, VDS= −16 V||||−100||
|Gate−to−Source Leakage Current|IGSS|N|VDS= 0 V, VGS=|±5.0 V|||±100|nA|
|||P|||||±100||
|**ON CHARACTERISTICS**(Note 4)|||||||||
|Gate Threshold Voltage|VGS(TH)|N|VGS= VDS|ID= 250�A|0.4||1.0|V|
|||P||ID= −250�A|−0.4||−1.0||
|Drain−to−Source On Resistance|RDS(on)|N|VGS= 4.5 V, ID=|100 mA||0.75|1.5|�|
|||P|VGS= −4.5V, ID= −100 mA|||2.0|5.0||
|||N|VGS= 2.5 V, ID= 50 mA|||1.0|2.0||
|||P|VGS= −2.5V, ID= −50 mA|||2.6|6.0||
|||N|VGS= 1.8 V, ID= 20 mA|||1.4|3.0||
|||P|VGS= −1.8V, ID= −20 mA|||3.4|7.0||
|||N|VGS= 1.5 V, ID= 10 mA|||1.8|4.5||
|||P|VGS= −1.5 V, ID= −10 mA|||4.0|10||
|||N|VGS= 1.2 V, ID= 1.0 mA|||2.8|||
|||P|VGS= −1.2 V, ID= −1.0 mA|||6.0|||
|Forward Transconductance|gFS|N|VDS= 5.0 V, ID= 125 mA|||0.48||S|
|||P|VDS= −5.0 V, ID= −125 mA|||0.35|||
|Source−Drain Diode Voltage|VSD|N|VGS= 0 V, IS= 10 mA|TJ= 25°C||0.6|1.0|V|
|||P|VGS= 0 V, IS= −10 mA|||−0.6|−1.0||
|**CAPACITANCES**|||||||||
|Input Capacitance|CISS|N|f = 1 MHz, VGS= 0 V<br>VDS= 15 V|||12.5||pF|
|Output Capacitance|COSS|||||3.6|||
|Reverse Transfer Capacitance|CRSS|||||2.6|||
|Input Capacitance|CISS|P|f = 1 MHz, VGS= 0 V<br>VDS= −15 V|||13.5|||
|Output Capacitance|COSS|||||3.8|||
|Reverse Transfer Capacitance|CRSS|||||2.0|||



4. Switching characteristics are independent of operating junction temperatures 

**www.onsemi.com** 

**2** 

## **NTUD3169CZ** 

**ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) 

|**ELECTRICAL CHARACTERISTIC**|**S**(TJ= 25°C|unless|otherwise specified)|||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**N/P**|**Test Condition**|**Min**|**Typ**|**Max**|**Unit**|
|**SWITCHING CHARACTERISTICS, VGS = 4.5 V**(Note 4)||||||||
|Turn−On Delay Time|td(ON)|N|VGS= 4.5 V, VDD= 10 V, ID= 200 mA,<br>RG= 2.0�||16.5||ns|
|Rise Time|tr||||25.5|||
|Turn−Off Delay Time|td(OFF)||||142|||
|Fall Time|tf||||80|||
|Turn−On Delay Time|td(ON)|P|VGS= −4.5 V, VDD= −15 V,<br>ID= −200 mA, RG= 2.0�||26|||
|Rise Time|tr||||46|||
|Turn−Off Delay Time|td(OFF)||||196|||
|Fall Time|tf||||145|||



4. Switching characteristics are independent of operating junction temperatures 

**www.onsemi.com** 

**3** 

**NTUD3169CZ** 

## **TYPICAL CHARACTERISTICS (N−CHANNEL)** 

**==> picture [491 x 591] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.4 0.4<br>VGS = 2 thru 5 V TJ = 25 ° C TJ = −55 ° C<br>VDS ≥  5 V<br>1.8 V TJ = 25 ° C TJ = 125 ° C<br>0.3 1.6 V 0.3<br>1.4 V<br>0.2 0.2<br>1.2 V<br>0.1 0.1<br>0 0<br>0 1 2 3 4 5 0 1 2 3<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)<br>Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics<br>4 1.50<br>ID = 220 mA TJ = 25 ° C<br>TJ = 25 ° C 1.25<br>3 VGS = 2.5 V<br>1.00<br>2 0.75 VGS = 4.5 V<br>0.50<br>1<br>0.25<br>0 0<br>0 1 2 3 4 5 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40<br>VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)<br>Figure 3. On−Resistance vs. Gate Voltage Figure 4. On−Resistance vs. Drain Current and<br>Gate Voltage<br>1.75 10,000<br>ID = 100 mA VGS = 0 V<br>1.50 VGS = 4.5 V<br>1.25 1000 TJ = 150 ° C<br>TJ = 125 ° C<br>1.00<br>100<br>0.75<br>0.50 10<br>−50 −25 0 25 50 75 100 125 150 0 4 8 12 16 20<br>TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>) � ) �<br>SISTANCE ( SISTANCE (<br>, DRAIN−TO−SOURCE RE- , DRAIN−TO−SOURCE RE-<br>DS(on) DS(on)<br>R R<br>, LEAKAGE (nA)<br>, DRAIN−TO−SOURCE RE- IDSS<br>SISTANCE (NORMALIZED)<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**Figure 5. On−Resistance Variation with Temperature** 

**Figure 6. Drain−to−Source Leakage Current vs. Voltage** 

**www.onsemi.com** 

**4** 

**NTUD3169CZ** 

## **TYPICAL CHARACTERISTICS (N−CHANNEL)** 

**==> picture [491 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
20.0 1000<br>VGS = 0 V VDD = 10 V<br>17.5 Ciss TJ = 25 ° C VIDGS = 200 mA = 4.5 V<br>15.0<br>td(off)<br>100<br>12.5 tf<br>10.0 Coss tr<br>td(on)<br>7.50<br>10<br>5.00<br>Crss<br>2.50<br>0 1<br>0 5 10 15 20 1 10 100<br>GATE−TO−SOURCE AND DRAIN−TO−SOURCE VOLTAGE (V) RG, GATE RESISTANCE ( � )<br>t, TIME (ns)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 7. Capacitance Variation** 

**Figure 8. Resistive Switching Time Variation vs. Gate Resistance** 

**==> picture [244 x 172] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.200<br>VGS = 0 V<br>0.175<br>TJ = 25 ° C<br>0.150<br>0.125<br>0.100<br>0.075<br>0.050<br>0.025<br>0<br>0 0.2 0.4 0.6 0.8 1<br>VSD, SOURCE−TO−DRAIN VOLTAGE (V)<br>, SOURCE CURRENT (A)<br>IS<br>**----- End of picture text -----**<br>


**Figure 9. Diode Forward Voltage vs. Current** 

**www.onsemi.com** 

**5** 

**NTUD3169CZ** 

## **TYPICAL CHARACTERISTICS (P−CHANNEL)** 

**==> picture [491 x 591] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.36 0.36<br>2.0 V TJ = 25 ° C VDS ≥  5 V TJ = −55 ° C TJ = 125 ° C<br>0.32 0.32<br>0.28 VGS = 2.2 thru 5 V 1.8 V 0.28 TJ = 25 ° C<br>0.24 0.24<br>1.6 V<br>0.20 0.20<br>0.16 0.16<br>1.4 V<br>0.12 0.12<br>0.08 1.2 V 0.08<br>0.04 0.04<br>0 0<br>0 1 2 3 4 5 0 1 2 3 4<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)<br>Figure 10. On−Region Characteristics Figure 11. Transfer Characteristics<br>12 4<br>TJ = 25 ° C<br>ID = 200 mA<br>TJ = 25 ° C<br>3<br>8 VGS = 2.5 V<br>2<br>VGS = 4.5 V<br>4<br>1<br>0 0<br>1 2 3 4 5 0.05 0.10 0.15 0.20 0.25 0.30 0.35<br>VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)<br>Figure 12. On−Resistance vs. Gate Voltage Figure 13. On−Resistance vs. Drain Current<br>and Gate Voltage<br>1.75 10,000<br>ID = 200 mA<br>VGS = 0 V<br>VGS = 4.5 V<br>1.50<br>1.25 1000 TJ = 150 ° C<br>1.00<br>100 TJ = 125 ° C<br>0.75<br>0.50 10<br>−50 −25 0 25 50 75 100 125 150 0 4 8 12 16 20<br>TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>) � ) �<br>SISTANCE ( SISTANCE (<br>, DRAIN−TO−SOURCE RE- , DRAIN−TO−SOURCE RE-<br>DS(on) DS(on)<br>R R<br>, LEAKAGE (nA)<br>, DRAIN−TO−SOURCE RE- IDSS<br>SISTANCE (NORMALIZED)<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**Figure 14. On−Resistance Variation with Temperature** 

**Figure 15. Drain−to−Source Leakage Current vs. Voltage** 

**www.onsemi.com** 

**6** 

**NTUD3169CZ** 

## **TYPICAL CHARACTERISTICS (P−CHANNEL)** 

**==> picture [491 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
18 1000<br>16 C iss<br>14 td(off)<br>12 100 tf<br>10 V GS  = 0 V tr<br>8 Coss T J  = 25 ° C td(on)<br>6 10<br>4 VDD = 10 V<br>2 Crss ID = 200 mA<br>VGS = 4.5 V<br>0 1<br>0 2 4 6 8 10 12 14 16 18 20 1 10 100<br>DRAIN−TO−SOURCE VOLTAGE (V) RG, GATE RESISTANCE ( � )<br>t, TIME (ns)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 16. Capacitance Variation** 

**Figure 17. Resistive Switching Time Variation vs. Gate Resistance** 

**==> picture [244 x 172] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.18<br>VGS = 0 V<br>0.16<br>TJ = 25 ° C<br>0.14<br>0.12<br>0.10<br>0.08<br>0.06<br>0.04<br>0.02<br>0<br>0 0.2 0.4 0.6 0.8 1<br>VSD, SOURCE−TO−DRAIN VOLTAGE (V)<br>, SOURCE CURRENT (A)<br>IS<br>**----- End of picture text -----**<br>


**Figure 18. Diode Forward Voltage vs. Current** 

**www.onsemi.com** 

**7** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**SOT−963** CASE 527AD−01 ISSUE E 

## DATE  09 FEB 2010 

**SCALE 4:1** 

NOTES: 

**==> picture [407 x 204] intentionally omitted <==**

**----- Start of picture text -----**<br>
D X A 1.<br>Y Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS<br>3.<br>6 5 4 FINISH THICKNESS. MINIMUM LEAD<br>E HE BASE MATERIAL.<br>4.<br>1 2 3 FLASH, PROTRUSIONS, OR GATE BURRS.<br>a||4 MILLIMETERS<br>DIM MIN NOM MAX<br>TOP VIEW C —> | A 0.34 0.37 0.40<br>SIDE VIEW b 0.10 0.15 0.20<br>C 0.07 0.12 0.17<br>D 0.95 1.00 1.05<br>e 6X L E 0.75 0.80 0.85<br>e 0.35 BSC<br>H E 0.95 1.00 1.05<br>L 0.19 REF<br>L2 0.05 0.10 0.15<br>GENERIC<br>Et MARKING DIAGRAM*<br>6X L2 6X b<br>0.08 X Y<br>t BOTTOM VIEW o  ec o XM<br>**----- End of picture text -----**<br>


1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 

2. CONTROLLING DIMENSION: MILLIMETERS 

|2.|Y14.5M, 1994.<br> CONTROLLING DIMENSION: MILLIMETERS|Y14.5M, 1994.<br> CONTROLLING DIMENSION: MILLIMETERS|
|---|---|---|
|3. <br>4. <br>~~|4~~<br>~~a||44~~|**DIM**<br>**MIN**<br>**NOM**<br>**MAX**<br>**MILLIMETERS**<br> MAXIMUM LEAD THICKNESS INCLUDES LEAD<br>FINISH THICKNESS. MINIMUM LEAD<br>THICKNESS IS THE MINIMUM THICKNESS OF<br>BASE MATERIAL.<br> DIMENSIONS D AND E DO NOT INCLUDE MOLD<br>FLASH, PROTRUSIONS, OR GATE BURRS.<br>~~|4~~<br>~~a||44~~||
||**A**<br>0.34<br>0.37<br>0.40||
||**b**<br>0.10<br>0.15<br>0.20||
||**C**<br>0.07<br>0.12<br>0.17||
||**D**<br>0.95<br>1.00<br>1.05||
||**E**<br>0.75<br>0.80<br>0.85||
||**e**<br>0.35 BSC<br>0.95<br>1.00<br>1.05<br>**HE**<br>**L**<br>0.19 REF<br>**L2**<br>0.05<br>0.10<br>0.15||



   - XM 

   - 1 

   - X = Specific Device Code M = Month Code 

- STYLE 1: STYLE 2: STYLE 3: PIN 1. EMITTER 1 PIN 1. EMITTER 1 PIN 1. CATHODE 1 2. BASE 1 2. EMITTER2 2. CATHODE 1 3. COLLECTOR 2 3. BASE 2 3. ANODE/ANODE 2 4. EMITTER 2 4. COLLECTOR 2 4. CATHODE 2 5. BASE 2 5. BASE 1 5. CATHODE 2 6. COLLECTOR 1 6. COLLECTOR 1 6. ANODE/ANODE 1 

- STYLE 4: STYLE 5: STYLE 6: PIN 1. COLLECTOR PIN 1. CATHODE PIN 1. CATHODE 2. COLLECTOR 2. CATHODE 2. ANODE 3. BASE 3. ANODE 3. CATHODE 4. EMITTER 4. ANODE 4. CATHODE 5. COLLECTOR 5. CATHODE 5. CATHODE 6. COLLECTOR 6. CATHODE 6. CATHODE 

- STYLE 7: STYLE 8: STYLE 9: PIN 1. CATHODE PIN 1. DRAIN PIN 1. SOURCE 1 2. ANODE 2. DRAIN 2. GATE 1 3. CATHODE 3. GATE 3. DRAIN 2 4. CATHODE 4. SOURCE 4. SOURCE 2 5. ANODE 5. DRAIN 5. GATE 2 6. CATHODE 6. DRAIN 6. DRAIN 1 

- *This information is generic. Please refer to device data sheet for actual part marking. 

- Pb−Free indicator, “G” or microdot “ ”, may or may not be present. 

**==> picture [124 x 123] intentionally omitted <==**

**----- Start of picture text -----**<br>
RECOMMENDED<br>MOUNTING FOOTPRINT<br>6X 6X<br>0.20 “ ie 0.35<br>PACKAGE<br>OUTLINE<br>Oo 1.20<br>0.35 oe<br>PITCH<br>DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br>


STYLE 10: PIN 1. CATHODE 1 

2. N/C 

3. CATHODE 2 

4. ANODE 2 

5. N/C 

6. ANODE 1 

**DOCUMENT NUMBER: 98AON26456D DESCRIPTION: SOT−963, 1X1, 0.35P** 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

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ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

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**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi’s** product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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## Links

- [View this product on Novapart](https://novapart.co/products/NTUD3169CZT5G/dual-mosfet-complementary-n-and-p-channel-20-v-220)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/onsemi/ntud3169czt5g/mosfet-n-p-ch-complement-20v-sot963/dp/2533207RL)
---

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