# Power MOSFET, N Channel, 60 V, 20 A, 0.024 ohm, WDFN, Surface Mount ![Product image](https://novapart.co/image/farnell:2533206/) **URL**: https://novapart.co/products/NTTFS5826NLTAG/power-mosfet-n-channel-60-v-20-a-0024-ohm-wdfn **SKU**: NTTFS5826NLTAG **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.3920 **Stock**: 10+ ## Description Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power ## Specifications | Parameter | Value | |---|---| | Msl | - | | Svhc | Lead (17-Jan-2022) | | No. Of Pins | 8Pins | | Channel Type | N Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 19W | | Transistor Mounting | Surface Mount | | Rds(On) Test Voltage | 10V | | Transistor Case Style | WDFN | | Drain Source Voltage Vds | 60V | | Operating Temperature Max | 175°C | | Continuous Drain Current Id | 20A | | Drain Source On State Resistance | 0.024ohm | | Gate Source Threshold Voltage Max | 3V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2533206/) ## NTTFS5826NL ## MOSFET – Power, Single, N-Channel, 8FL 60 V, 24 m Q ## **Features** - Small Footprint (3.3 x 3.3 mm) for Compact Designs - Low QG(TOT) to Minimize Switching Losses - Low Capacitance to Minimize Driver Losses - These are Pb−Free Devices ## **Applications** - Motor Drivers - DC−DC Converters • Synchronous Rectification • Power Management **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) **Parameter Symbol Value Unit** Drain−to−Source Voltage VDSS 60 V ~~es~~ ~~**e**~~ Gate−to−Source Voltage ~~ss~~ VGS 20 V Continuous Drain Tmb = 25 ° C ID 20 A Current R(Notes 1, 2, and 3)J−mb Tmb = 100 ° C 14 ~~—~~ Power Dissipation ~~ee~~ Tmb = 25 ° C ~~ee~~ PD 19 W and 3)R J−mb[ (Notes 1, 2,] Steady ~~—~~ Tmb = 100 ° C 10 Continuous Drain State TA = 25 ° C ID 8 A Current R& 3) JA (Notes 1 TA = 100 ° C 6 ~~ee ee~~ Power Dissipation ~~|~~ TA = 25 ° C PD ~~|~~ 3.1 W ~~ee~~ R JA (Notes 1 & 3) TA = 100 ° C 1.6 Pulsed Drain Current TA = 25 ° C, tp = 10 s IDM 133 A ~~es~~ Operating Junction and Storage Temperature ~~ee|~~ TJ, Tstg ~~a~~ −55 to ° C 175 ~~ee eee~~ Source Current (Body Diode) IS 20 A ~~es~~ Single Pulse Drain−to−Source Avalanche EAS 20 mJ Energy (TJ = 25 ° C, VDD = 50 V, VGS = 10 V, IL(pk) = 14.4 A, L = 1.0 mH, RG = 25 ) ~~ee~~ Lead Temperature for Soldering Purposes ~~ee~~ TL 260 ° C (1/8 ″ from case for 10 s) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended ~~ee ee ee~~ Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ## **THERMAL RESISTANCE MAXIMUM RATINGS** ~~ee~~ **Parameter Symbol Value Unit** Junction−to−Mounting Board (top) − Steady R J−mb 7.9 ° C/W State (Notes 2, 3) ~~poee~~ Junction−to−Ambient − Steady State (Note 3) R JA 48 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. **http://onsemi.com** **==> picture [190 x 326] intentionally omitted <==** **----- Start of picture text -----**
V(BR)DSS RDS(on) MAX ID MAX
a ee
24 m @ 10 V
60 V 20 A
32 m @ 4.5 V
Poi
N−Channel
D
G
a h S
MARKING DIAGRAM
1
ys ,
1 S D
r |
WDFN8 S 5826 D
( 8FL) S AYWW D
CASE 511AB G D
— —
5826 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
; = Pb−Free Package
(Note: Microdot may be in either location)
**----- End of picture text -----**
**ORDERING INFORMATION Device Package Shipping**[†] NTTFS5826NLTAG WDFN8 1500/Tape & Reel (Pb−Free) NTTFS5826NLTWG WDFN8 5000/Tape & Reel (Pb−Free) ~~TF~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: **NTTFS5826NL/D** **1** © Semiconductor Components Industries, LLC, 2011 **June, 2019 − Rev. 2** **NTTFS5826NL** 2. Psi ( � ) is used as required per JESD51−12 for packages in which substantially less than 100% of the heat flows to single case surface. 3. Surface−mounted on FR4 board using a 650 mm[2] , 2 oz. Cu pad. **http://onsemi.com** **2** ## **NTTFS5826NL** **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) |**ELECTRICAL CHARACTERISTIC**|**S**(TJ= 25°C|unless otherwise specified)|unless otherwise specified)||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||||| |Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID= 250�A||60|||V| |Drain−to−Source Breakdown Voltage
Temperature Coefficient|V(BR)DSS/TJ||||58.6||mV/°C| |Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,
VDS= 60 V|TJ= 25°C|||1.0|�A| ||||TJ= 125°C|||10|| |Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS=|±20 V|||±100|nA| |**ON CHARACTERISTICS**(Note 4)|||||||| |Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= 250�A||1.5||3.0|V| |Negative Threshold Temperature
Coefficient|VGS(TH)/TJ||||5.6||mV/°C| |Drain−to−Source On Resistance|RDS(on)|VGS= 10 V|ID= 7.5 A||19|24|m�| |||VGS= 4.5 V|ID= 7.5 A||25|32|| |Forward Transconductance|gFS|VDS = 15 V, ID = 5.0 A|||8||S| |**CHARGES, CAPACITANCES AND GATE RESISTANCE**|||||||| |Input Capacitance|Ciss|VGS = 0 V, f = 1.0 MHz, VDS = 25 V|||850||pF| |Output Capacitance|Coss||||85||| |Reverse Transfer Capacitance|Crss||||50||| |Total Gate Charge|QG(TOT)|VGS = 4.5 V, VDS = 48 V,
ID = 5.0 A|||8.4||nC| |Threshold Gate Charge|QG(TH)||||1.0||| |Gate−to−Source Charge|QGS||||2.5||| |Gate−to−Drain Charge|QGD||||3.9||| |Total Gate Charge|QG(TOT)|VGS = 10 V, VDS = 48V, ID = 5.0A|||16|25|nC| |Gate Resistance|RG|TA= 25°C|||1.5||�| |**SWITCHING CHARACTERISTICS**(Note 5)|||||||| |Turn−On Delay Time|td(on)|VGS= 4.5 V, VDS
ID= 5.0 A, RG=|= 48 V,
2.5�||9.0|18|ns| |Rise Time|tr||||15|28|| |Turn−Off Delay Time|td(off)||||14|25|| |Fall Time|tf||||5.4|12|| |Turn−On Delay Time|td(on)|VGS= 10 V, VDS=
ID= 5.0 A, RG=|48 V,
2.5�||7.0|12|ns| |Rise Time|tr||||10|20|| |Turn−Off Delay Time|td(off)||||17|30|| |Fall Time|tf||||3.5|6.0|| |**DRAIN−SOURCE DIODE CHARACTERISTICS**|||||||| |Forward Diode Voltage|VSD|VGS= 0 V,
IS= 7.5 A|TJ= 25°C||0.8|2.3|V| ||||TJ= 125°C||0.7||| |Reverse Recovery Time|tRR|VGS= 0 V, dIS/dt= 100 A/�s,
IS= 5.0 A|||15||ns| |Charge Time|ta||||12||| |Discharge Time|tb||||4||| |Reverse Recovery Charge|QRR||||13||nC| 4. Pulse Test: pulse width = 300 � s, duty cycle � 2%. 5. Switching characteristics are independent of operating junction temperatures. **http://onsemi.com** **3** **NTTFS5826NL** ## **TYPICAL CHARACTERISTICS** **==> picture [489 x 171] intentionally omitted <==** **----- Start of picture text -----**
40 40
V10 VGS = VGS = 4.5 V TJ = 25 ° C VDS ≥ 10 V
V GS = 3.8 V
30 30
VGS = 3.6 V
20 20
T J = 25 ° C
VGS = 3.2 V
10 10
TJ = 125 ° C
V GS = 2.8 V TJ = −55 ° C
0 0
0 1 2 3 4 5 1 2 3 4 5
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
, DRAIN CURRENT (A)
, DRAIN CURRENT (A)ID ID
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**==> picture [156 x 10] intentionally omitted <==** **----- Start of picture text -----**
Figure 1. On−Region Characteristics
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**Figure 2. Transfer Characteristics** **==> picture [493 x 423] intentionally omitted <==** **----- Start of picture text -----**
0.040
0.055 T IDJ = 7.5 A = 25 ° C TJ = 25 ° C
0.045 0.030
VGS = 4.5 V
0.035
0.020 VGS = 10 V
0.025
0.015 0.010
2 4 6 8 10 5 10 15 20 25 30 35 40
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and
Voltage Gate Voltage
2.10 10000
1.90 ID = 7.5 A VGS = 0 V
VGS = 4.5 V
1.70
TJ = 150 ° C
1.50
1.30 1000
1.10 TJ = 125 ° C
0.90
0.70
0.50 100
−50 −25 0 25 50 75 100 125 150 175 10 20 30 40 50 60
TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current
Temperature vs. Voltage
) � ) �
, DRAIN−TO−SOURCE RESISTANCE ( , DRAIN−TO−SOURCE RESISTANCE (
DS(on) DS(on)
R R
, LEAKAGE (nA)
, DRAIN−TO−SOURCE
IDSS
DS(on)
R RESISTANCE (NORMALIZED)
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**http://onsemi.com** **4** **NTTFS5826NL** ## **TYPICAL CHARACTERISTICS** **==> picture [491 x 174] intentionally omitted <==** **----- Start of picture text -----**
10
1000 V DS = 0 V QT
TJ = 25 ° C
Ciss 8
800
6
600
400 4 Qgs Qgd
200 2 VDS = 48 V
C rss Coss TIDJ = 5 A = 25 ° C
0 0
0 10 20 30 40 50 60 0 4 8 12 16
VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)
(V)
C, CAPACITANCE (pF)
, GATE−TO−SOURCE VOLTAGE
GS
V
**----- End of picture text -----**
**Figure 7. Capacitance Variation** **==> picture [181 x 9] intentionally omitted <==** **----- Start of picture text -----**
Figure 8. Gate−to−Source vs. Total Charge
**----- End of picture text -----**
**==> picture [494 x 413] intentionally omitted <==** **----- Start of picture text -----**
100
40
VDD = 48 V VGS = 0 V
ID = 5 A TJ = 25 ° C
VGS = 4.5 V
30
tr
td(off)
10 20
td(on)
tf
10
1 0
1 10 100 0.5 0.6 0.7 0.8 0.9 1.0 1.1
RG, GATE RESISTANCE ( � ) VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current
vs. Gate Resistance
1000 20
VGS = 10 V ID = 20 A
Single Pulse
100 TC = 25 ° C 1 ms100 � s 15
10 ms 10 � s
10 dc 10
1 5
RDS(on) Limit
Thermal Limit
Package Limit
0.1 0
0.1 1 10 100 25 50 75 100 125 150 175
VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE ( ° C)
Figure 11. Maximum Rated Forward Biased Figure 12. Maximum Avalanche Energy vs.
Safe Operating Area Starting Junction Temperature
t, TIME (ns)
, SOURCE CURRENT (A)
IS
, DRAIN CURRENT (A)
ID , SINGLE PULSE DRAIN−TO−
AS
E
SOURCE AVALANCHE ENERGY (mJ)
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**http://onsemi.com** **5** **NTTFS5826NL** ## **TYPICAL CHARACTERISTICS** **==> picture [492 x 187] intentionally omitted <==** **----- Start of picture text -----**
100
D = 0.5
10 D = 0.2
D = 0.1
D = 0.05
D = 0.02
1
D = 0.01
0.1
Single Pulse
0.01
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
PULSE TIME (sec)
Figure 13. Thermal Response
(t)
JA
�
R
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**http://onsemi.com** **6** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [4 x 5] intentionally omitted <==** **----- Start of picture text -----**
1
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**==> picture [94 x 29] intentionally omitted <==** **----- Start of picture text -----**
WDFN8 3.3x3.3, 0.65P
CASE 511AB
ISSUE D
**----- End of picture text -----**
**==> picture [80 x 7] intentionally omitted <==** **----- Start of picture text -----**
DATE 23 APR 2012
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**==> picture [487 x 447] intentionally omitted <==** **----- Start of picture text -----**
SCALE 2:1
2X
0.20 C NOTES:1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
o D S A 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
D1 B 2X PROTRUSIONS OR GATE BURRS.
8 7 6 5 0.20 C DIM MINMILLIMETERSNOM MAX MIN INCHESNOM MAX
A 0.70 0.75 0.80 0.028 0.030 0.031
4X A1 0.00 −−− 0.05 0.000 −−− 0.002
E1 E b 0.23 0.30 0.40 0.009 0.012 0.016
c 0.15 0.20 0.25 0.006 0.008 0.010
D 3.30 BSC 0.130 BSC
1 2 3 4 c D1 2.95 3.05 3.15 0.116 0.120 0.124
me “Ap A1 —BSEEES D2 1.98 2.11 2.24 0.078 0.083 0.088
TOP VIEW E 3.30 BSC 0.130 BSC
E1 2.95 3.05 3.15 0.116 0.120 0.124
0.10 C E2 1.47 1.60 1.73 0.058 0.063 0.068
E3 0.23 0.30 0.40 0.009 0.012 0.016
ly es
0.10 C an? A Mh 6Xe , SEATINGPLANEC See GKe 0.300.65 0.65 BSC0.410.80 0.510.95 0.0120.026 0.026 BSC0.0160.032 0.0200.037
L 0.30 0.43 0.56 0.012 0.017 0.022
SIDE VIEW DETAIL A DETAIL A L1 0.06 0.13 0.20 0.002 0.005 0.008
M 1.40 1.50 1.60 0.055 0.059 0.063
0 −−− 12 0 −−− 12
8X b
0.10 C A B
SOLDERING FOOTPRINT*
0.05 C
8X
4X L e/2 0.42 0.65 4X
1 4 PITCH 0.66
PACKAGE
s o rain K OUTLINE wir
E2
E3 M
FT hal NrBEES1
8 5
L1 3.60
G D2
Fi BOTTOM VIEW 0.75 P| 0.57 2.30
:
GENERIC
MARKING DIAGRAM* 0.47 a 2.37 a
1 3.46
XXXXX DIMENSION: MILLIMETERS
AYWW
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
XXXXX = Specific Device Code Mounting Techniques Reference Manual, SOLDERRM/D.
A = Assembly Location
Y = Year
WW = Work Week
= Pb−Free Package
**----- End of picture text -----**
*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. **DOCUMENT NUMBER: 98AON30561E DESCRIPTION: WDFN8 3.3X3.3, 0.65P** Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **PAGE 1 OF 1** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. 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