# Power MOSFET, N Channel, 30 V, 75 A, 4500 µohm, WDFN, Surface Mount

![Product image](https://novapart.co/image/farnell:3616557/)

**URL**: https://novapart.co/products/NTTFS4937NTAG/power-mosfet-n-channel-30-v-75-a-4500-ohm-wdfn
**SKU**: NTTFS4937NTAG
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1700
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (15-Jan-2018) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 43.1W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | WDFN |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 75A |
| Drain Source On State Resistance | 4500µohm |
| Gate Source Threshold Voltage Max | 2.2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3616557/)

## NTTFS4937N MOSFET – Power, Single, N-Channel, 8FL Ww ~~-~~ 30 V, 75 A 

## **Features** 

**http://onsemi.com** 

- Low R to Minimize Conduction Losses DS(on) 

- Low Capacitance to Minimize Driver Losses 

**==> picture [192 x 326] intentionally omitted <==**

**----- Start of picture text -----**<br>
V(BR)DSS RDS(on) MAX ID MAX<br>4.5 m  @ 10 V<br>30 V 75 A<br>7.0 m  @ 4.5 V<br>et<br>N−Channel MOSFET<br>D (5−8)<br>G (4)<br>a } S (1,2,3)<br>MARKING DIAGRAM<br>1<br>@ 1 S | D<br>WDFN8 S 4937 D<br>( 8FL) S AYWW D<br>CASE 511AB G D<br>4937 = Specific Device Code<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>= Pb−Free Package<br>(Note: Microdot may be in either location)<br>**----- End of picture text -----**<br>


- Optimized Gate Charge to Minimize Switching Losses 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

## **Applications** 

- Low−Side DC−DC Converters 

• Power Load Switch 

|• Notebook Battery Management<br>• Motor Control<br>**MAXIMUM RATINGS**(TJ= 25°C unless otherwise stated)<br>~~a~~|• Notebook Battery Management<br>• Motor Control<br>**MAXIMUM RATINGS**(TJ= 25°C unless otherwise stated)<br>~~a~~|• Notebook Battery Management<br>• Motor Control<br>**MAXIMUM RATINGS**(TJ= 25°C unless otherwise stated)<br>~~a~~|C unless otherwise stated)|||
|---|---|---|---|---|---|
|**Parameter**<br>~~a~~|||**Symbol**|**Value**|**Unit**|
|Drain−to−Source Voltage<br>~~a~~<br>~~a~~<br>~~a~~|||VDSS<br>~~a~~<br>~~ee~~|30<br>~~a~~|V<br>~~a~~|
|Gate−to−Source Voltage<br>~~a~~<br>~~a~~<br>~~>»|ea~~|||VGS<br>~~ee~~<br>~~eaFil~~|±20<br>~~Fil~~|V<br>~~Fil~~|
|Continuous Drain<br>Current R JA(Note 1)<br>~~a~~<br>~~>»|~~<br>~~a~~|Steady<br>State<br>~~| ~~<br>~~ee~~<br> <br>~~ee~~<br> <br>~~ee~~<br><br>~~OT~~|TA= 25°C<br>~~ea~~|ID<br>~~ee~~<br>~~eaFil~~|17<br>~~Fil~~|A<br>~~Fil~~|
|||TA= 85°C<br>~~ea~~||12<br>~~Fil~~||
|Power Dissipation R JA<br>(Note 1)<br>~~>» |~~<br>~~a~~||TA= 25°C<br> ~~ea~~|PD<br>~~ea Fil~~|2.24<br>~~Fil~~|W<br>~~Fil~~|
|Continuous Drain<br>Current R JA ≤10 s<br>(Note 1)<br>~~ee~~||TA= 25°C<br>~~ee~~|ID<br>~~ee~~|25<br>~~ee~~|A<br>~~ee~~|
|||TA= 85°C<br>~~ee~~||18<br>~~ee~~||
|Power Dissipation<br>R JA ≤10 s (Note 1)<br>~~ee~~<br>~~es ~~||TA= 25°C<br>~~ee ~~<br> ~~ee~~|PD<br> ~~ee~~<br>~~ee~~|4.7<br>~~ee~~<br>~~ee~~|W<br>~~ee~~<br>~~ee~~|
|Continuous Drain<br>Current R JA(Note 2)<br>~~ee~~||TA= 25°C<br>~~ee~~|ID<br>|11<br>|A<br>|
|||TA= 85°C<br>~~ee ~~||8.0<br>||
|Power Dissipation<br>R JA(Note 2)<br><br>~~Pe ~~||TA= 25°C<br> <br> ~~ee~~|PD<br> ~~e~~<br>~~ee~~|0.86<br>~~e~~<br>~~ee~~|W<br>~~e~~<br>~~ee~~|
|Continuous Drain<br>Current R JC(Note 1)<br>~~ee~~||TC= 25°C<br>~~ee~~|ID<br>~~ee~~|75<br>~~ee~~|A<br>~~ee~~|
|||TC= 85°C<br>~~ee~~||54<br>~~ee~~||
|Power Dissipation<br>R JC(Note 1)<br>~~es~~<br>~~OT~~||TC= 25°C<br>~~ee~~<br>~~OT~~|PD<br>~~ee~~|43.1<br>~~ee~~|W<br>~~ee~~|
|Pulsed Drain Current<br>~~es ~~<br>~~es~~<br>~~OT~~|TA= 25°C, tp= 10 s<br> ~~ee~~<br>~~es~~<br>~~Oe~~<br>~~OT~~||IDM<br>~~ee~~<br>~~es~~|230<br>~~ee~~<br>~~es~~|A<br>~~ee~~<br>~~es~~|
|Operating Junction and Storage Temperature<br>~~Oe~~<br>~~OT~~|||TJ,<br>Tstg|−55 to<br>+150|°C|
|Source Current (Body Diode)<br>~~OT~~<br>~~a~~|||IS<br>~~a~~|48<br>~~a~~|A<br>~~a~~|
|Drain to Source dV/dt<br>~~OT~~<br>~~a~~<br>~~a~~|||dV/dt<br>~~a~~<br>~~a~~|6.0<br>~~a~~<br>~~a~~|V/ns<br>~~a~~<br>~~a~~|
|Single Pulse Drain−to−Source Avalanche Energy<br>(TJ= 25°C, VDD= 50 V, VGS= 10 V,<br>IL= 37 Apk, L = 0.1 mH, RG= 25 )<br>~~ee~~|||EAS<br>~~ee~~|68.5<br>~~ee~~|mJ<br>~~ee~~|
|Lead Temperature for Soldering Purposes<br>(1/8″from case for 10 s)<br>~~ee~~|||TL<br>~~ee~~|260<br>~~ee~~|°C<br>~~ee~~|



- Notebook Battery Management 

- Motor Control 

**ORDERING INFORMATION Device Package Shipping**[†] NTTFS4937NTAG WDFN8 1500/Tape & Reel (Pb−Free) NTTFS4937NTWG WDFN8 5000/Tape & Reel (Pb−Free) ~~Tt~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 

Publication Order Number: **NTTFS4937N/D** 

**1** 

© Semiconductor Components Industries, LLC, 2013 **June, 2019 − Rev. 3** 

## **NTTFS4937N** 

1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 

2. Surface−mounted on FR4 board using the minimum recommended pad size. 

## **THERMAL RESISTANCE MAXIMUM RATINGS** 

|**THERMAL RESISTANCE MAXIMUM RATINGS**||||
|---|---|---|---|
|**Parameter**|**Symbol**|**Value**|**Unit**|
|Junction−to−Case (Drain)|R�JC|2.9|°C/W|
|Junction−to−Ambient – Steady State (Note 3)|R�JA|55.9||
|Junction−to−Ambient – Steady State (Note 4)|R�JA|144.6||
|Junction−to−Ambient –(t≤10 s) (Note 3)|R�JA|26.4||



3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 

4. Surface−mounted on FR4 board using the minimum recommended pad size (40 mm[2] , 1 oz. Cu). 

## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) 

|**ELECTRICAL CHARACTERISTIC**|**S**(TJ= 25°C|unless otherwise specified)|unless otherwise specified)|||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||||
|Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID= 250�A||30|||V|
|Drain−to−Source Breakdown Voltage<br>Temperature Coefficient|V(BR)DSS/TJ||||15||mV/°C|
|Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,<br>VDS= 24 V|TJ= 25°C|||1.0|�A|
||||TJ= 125°C|||10||
|Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS=|±20 V|||±100|nA|
|**ON CHARACTERISTICS**(Note 5)||||||||
|Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= 250�A||1.2|1.6|2.2|V|
|Negative Threshold Temperature<br>Coefficient|VGS(TH)/TJ||||4.0||mV/°C|
|Drain−to−Source On Resistance|RDS(on)|VGS= 10 V|ID= 20 A||3.4|4.5|m�|
||||ID = 10 A||3.4|||
|||VGS= 4.5 V|ID= 20 A||4.9|7.0||
||||ID = 10 A||4.8|||
|Forward Transconductance|gFS|VDS = 1.5 V, ID =|15 A||37||S|
|**CHARGES AND CAPACITANCES**||||||||
|Input Capacitance|Ciss|VGS = 0 V, f = 1.0 MHz, VDS = 15 V|||2540||pF|
|Output Capacitance|Coss||||893|||
|Reverse Transfer Capacitance|Crss||||26|||
|Total Gate Charge|QG(TOT)|VGS = 4.5 V, VDS = 15 V, ID = 20 A|||15.7||nC|
|Threshold Gate Charge|QG(TH)||||4.0|||
|Gate−to−Source Charge|QGS||||7.6|||
|Gate−to−Drain Charge|QGD||||1.9|||
|Total Gate Charge|QG(TOT)|VGS = 10 V, VDS = 15 V, ID = 20 A|||35.5||nC|
|**SWITCHING CHARACTERISTICS**(Note 6)||||||||
|Turn−On Delay Time|td(on)|VGS= 4.5 V, VDS= 15 V,<br>ID= 15 A, RG= 3.0�|||13.9||ns|
|Rise Time|tr||||21.2|||
|Turn−Off Delay Time|td(off)||||21.2|||
|Fall Time|tf||||7.4|||



5. Pulse Test: pulse width = 300 � s, duty cycle � 2%. 

6. Switching characteristics are independent of operating junction temperatures. 

**http://onsemi.com** 

**2** 

## **NTTFS4937N** 

**ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) 

|**ELECTRICAL CHARACTERISTIC**|**S**(TJ= 25°C|unless otherwise specified)|unless otherwise specified)|||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**|
|**SWITCHING CHARACTERISTICS**(Note 6)||||||||
|Turn−On Delay Time|td(on)|VGS= 10 V, VDS=<br>ID= 15 A, RG=|15 V,<br>3.0�||9.8||ns|
|Rise Time|tr||||19.8|||
|Turn−Off Delay Time|td(off)||||28.8|||
|Fall Time|tf||||4.0|||
|**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||||
|Forward Diode Voltage|VSD|VGS= 0 V,<br>IS= 20 A|TJ= 25°C||0.85|1.1|V|
||||TJ= 125°C||0.72|||
|Reverse Recovery Time|tRR|VGS= 0 V, dIS/dt= 100 A/�s,<br>IS= 20 A|||38.5||ns|
|Charge Time|ta||||20.2|||
|Discharge Time|tb||||18.2|||
|Reverse Recovery Charge|QRR||||33||nC|
|**PACKAGE PARASITIC VALUES**||||||||
|Source Inductance|LS|TA= 25°C|||0.38||nH|
|Drain Inductance|LD||||0.054|||
|Gate Inductance|LG||||1.3|||
|Gate Resistance|RG||||1.1|2.0|�|



5. Pulse Test: pulse width = 300 � s, duty cycle � 2%. 

6. Switching characteristics are independent of operating junction temperatures. 

**http://onsemi.com** 

**3** 

**NTTFS4937N** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [243 x 384] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>10 V 4.5 V TJ = 25 ° C<br>90<br>3.6 V<br>80<br>VGS = 4.0 V<br>70 3.4 V<br>60<br>3.2 V<br>50<br>40<br>3.0 V<br>30<br>20 2.8 V<br>2.4 V<br>10 2.6 V<br>0<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>Figure 1. On−Region Characteristics<br>0.060<br>ID = 20 AD = 20 A = 20 A<br>0.050 T J  = 25 ° C<br>0.040<br>0.030<br>0.020<br>0.010<br>0.000<br>2 3 4 5 6 7 8 9 10<br>VGS (V)GS (V) (V)<br>, DRAIN CURRENT (A)<br>ID<br>) �<br>, DRAIN−TO−SOURCE RESISTANCE (<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
90<br>80 VDS ≥  10 V<br>70<br>60<br>50<br>40<br>TJ = 25 ° C<br>30<br>20<br>TJ = 125 ° C<br>10<br>TJ = −55 ° C<br>0<br>1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
VGS, GATE−TO−SOURCE VOLTAGE (V)<br>**----- End of picture text -----**<br>


**Figure 2. Transfer Characteristics** 

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**----- Start of picture text -----**<br>
0.060 0.0070<br>ID = 20 AD = 20 A = 20 A TJ = 25 ° C<br>0.050 T J  = 25 ° C 0.0065<br>0.0060<br>0.040<br>0.0055<br>0.030 0.0050<br>VGS = 4.5 V<br>0.0045<br>0.020<br>0.0040<br>V GS  = 10 V<br>0.010<br>0.0035<br>0.000 0.0030<br>2 3 4 5 6 7 8 9 10 10 20 30 40 50 60 70 80 90 100110120130140150160<br>VGS (V)GS (V) (V) ID, DRAIN CURRENT (A)<br>Figure 3. On−Resistance vs. VGS Figure 4. On−Resistance vs. Drain Current and<br>Gate Voltage<br>1.8 10,000<br>1.7 ID = 20 A VGS = 0 V<br>1.6 VGS = 10 V TJ = 150 ° C<br>1.5<br>1.41.3 1000 TJ = 125 ° C<br>1.2<br>1.1<br>1.0 100<br>0.9 TJ = 85 ° C<br>0.8<br>0.7<br>0.6 10<br>−50 −25 0 25 50 75 100 125 150 5 10 15 20 25 30<br>TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>� )<br>, DRAIN−TO−SOURCE RESISTANCE ( �<br>, DRAIN−TO−SOURCE RESISTANCE (<br>DS(on)<br>R DS(on)<br>R<br>, LEAKAGE (nA)<br>, DRAIN−TO−SOURCE<br>IDSS<br>DS(on)<br>R RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br>


**Figure 6. Drain−to−Source Leakage Current vs. Voltage** 

**Figure 5. On−Resistance Variation with Temperature** 

**http://onsemi.com** 

**4** 

**NTTFS4937N** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [240 x 159] intentionally omitted <==**

**----- Start of picture text -----**<br>
2800<br>2600 Ciss<br>2400<br>2200<br>2000<br>1800 V GS  = 0 V<br>1600 TJ = 25 ° C<br>1400<br>1200 Coss<br>1000<br>800<br>600<br>400<br>200 Crss<br>0<br>0 5 10 15 20 25 30<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


VDS, DRAIN−TO−SOURCE VOLTAGE (V) 

**Figure 7. Capacitance Variation** 

**==> picture [240 x 175] intentionally omitted <==**

**----- Start of picture text -----**<br>
11<br>10 QT<br>9 TJ = 25 ° C<br>8<br>7<br>6<br>5 Qgd<br>4<br>Qgs<br>3<br>2 V DD = 15 V<br>VGS = 10 V<br>1<br>I D  = 20 A<br>0<br>0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32<br>Qg, TOTAL GATE CHARGE (nC)<br>, GATE−TO−SOURCE VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


**Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge** 

**==> picture [491 x 382] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000 30<br>VDD = 15 V VGS = 0 V<br>VIDGS = 15 A = 10 V td(off) 25<br>100 tf 20<br>tr TJ = 125 ° C<br>15<br>td(on)<br>10 10<br>5<br>TJ = 25 ° C<br>1 0<br>1 10 100 0.4 0.5 0.6 0.7 0.8 0.9 1.0<br>RG, GATE RESISTANCE ( � ) VSD, SOURCE−TO−DRAIN VOLTAGE (V)<br>Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current<br>vs. Gate Resistance<br>1000 70<br>ID = 37 A<br>60<br>100<br>10  � s 50<br>10 100  � s<br>40<br>1 ms<br>1 VGS = 20 V 10 ms 30<br>Single Pulse<br>TC = 25 ° C dc 20<br>0.1 RDS(on) Limit<br>Thermal Limit 10<br>Package Limit<br>0.01 0<br>0.01 0.1 1 10 100 25 50 75 100 125 150<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE ( ° C)<br>t, TIME (ns)<br>, SOURCE CURRENT (A)<br>IS<br>, DRAIN CURRENT (A)<br>ID , SINGLE PULSE DRAIN−TO−<br>AS<br>E<br>SOURCE AVALANCHE ENERGY (mJ)<br>**----- End of picture text -----**<br>


**Figure 11. Maximum Rated Forward Biased Safe Operating Area** 

**Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature** 

**http://onsemi.com** 

**5** 

**NTTFS4937N** 

## **TYPICAL CHARACTERISTICS** 

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**----- Start of picture text -----**<br>
100<br>Duty Cycle = 50%<br>20%<br>10<br>10%<br>5%<br>1 2%<br>1%<br>0.1<br>Single Pulse<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>PULSE TIME (sec)<br>C/W)<br>°<br>R(t) (<br>**----- End of picture text -----**<br>


**Figure 13. Thermal Response** 

**http://onsemi.com** 

**6** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

## **WDFN8 3.3x3.3, 0.65P** CASE 511AB ISSUE D 

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**----- Start of picture text -----**<br>
1<br>**----- End of picture text -----**<br>


## DATE 23 APR 2012 

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**----- Start of picture text -----**<br>
SCALE 2:1<br>**----- End of picture text -----**<br>


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2X<br>0.20 C<br>D A<br>D1 B 2X<br>8 7 6 5 0.20 C<br>4X<br>E1 E �<br>1 2 3 4 c A1<br>TOP VIEW<br>0.10 C<br>A 6X C<br>0.10 C e SEATING<br>PLANE<br>SIDE VIEW DETAIL A DETAIL A<br>8X b<br>0.10 C A B<br>0.05 C<br>4X L e/2<br>1 4<br>K<br>E2<br>E3 M<br>8 5<br>L1<br>G D2<br>BOTTOM VIEW<br>**----- End of picture text -----**<br>


|NOT<br>1. <br>2. <br>3.|ES:<br> DIMEN<br> CONT<br> DIMEN<br>PROT|1.40<br>1.50<br>0<br>−−−<br>�<br>1.60<br>12�<br>SIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>ROLLING DIMENSION: MILLIMETERS.<br>SION D1 AND E1 DO NOT INCLUDE MOLD FLASH<br>RUSIONS OR GATE BURRS.<br>**MIN**<br>**NOM**<br>**MILLIMETERS**<br>0.70<br>0.75<br>0.00<br>−−−<br>0.23<br>0.30<br>0.15<br>0.20<br>2.95<br>3.05<br>1.98<br>2.11<br>2.95<br>3.05<br>1.47<br>1.60<br>0.65 BSC<br>0.30<br>0.41<br>0.65<br>0.80<br>0.30<br>0.43<br>0.06<br>0.13<br>**MAX**<br>0.80<br>0.05<br>0.40<br>0.25<br>3.15<br>2.24<br>3.15<br>1.73<br>0.51<br>0.95<br>0.56<br>0.20<br>0.055<br>0.059<br>0<br>−−−<br>�<br>0.063<br>12�<br>0.028<br>0.030<br>0.000<br>−−−<br>0.009<br>0.012<br>0.006<br>0.008<br>0.116<br>0.120<br>0.078<br>0.083<br>0.116<br>0.120<br>0.058<br>0.063<br>0.026 BSC<br>0.012<br>0.016<br>0.026<br>0.032<br>0.012<br>0.017<br>0.002<br>0.005<br>0.031<br>0.002<br>0.016<br>0.010<br>0.124<br>0.088<br>0.124<br>0.068<br>0.020<br>0.037<br>0.022<br>0.008<br>**MIN**<br>**NOM**<br>**INCHES**<br>**MAX**<br>3.30 BSC<br>3.30 BSC<br>0.130 BSC<br>0.130 BSC<br>0.23<br>0.30<br>0.40<br>0.009<br>0.012<br>0.016|1.40<br>1.50<br>0<br>−−−<br>�<br>1.60<br>12�<br>SIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>ROLLING DIMENSION: MILLIMETERS.<br>SION D1 AND E1 DO NOT INCLUDE MOLD FLASH<br>RUSIONS OR GATE BURRS.<br>**MIN**<br>**NOM**<br>**MILLIMETERS**<br>0.70<br>0.75<br>0.00<br>−−−<br>0.23<br>0.30<br>0.15<br>0.20<br>2.95<br>3.05<br>1.98<br>2.11<br>2.95<br>3.05<br>1.47<br>1.60<br>0.65 BSC<br>0.30<br>0.41<br>0.65<br>0.80<br>0.30<br>0.43<br>0.06<br>0.13<br>**MAX**<br>0.80<br>0.05<br>0.40<br>0.25<br>3.15<br>2.24<br>3.15<br>1.73<br>0.51<br>0.95<br>0.56<br>0.20<br>0.055<br>0.059<br>0<br>−−−<br>�<br>0.063<br>12�<br>0.028<br>0.030<br>0.000<br>−−−<br>0.009<br>0.012<br>0.006<br>0.008<br>0.116<br>0.120<br>0.078<br>0.083<br>0.116<br>0.120<br>0.058<br>0.063<br>0.026 BSC<br>0.012<br>0.016<br>0.026<br>0.032<br>0.012<br>0.017<br>0.002<br>0.005<br>0.031<br>0.002<br>0.016<br>0.010<br>0.124<br>0.088<br>0.124<br>0.068<br>0.020<br>0.037<br>0.022<br>0.008<br>**MIN**<br>**NOM**<br>**INCHES**<br>**MAX**<br>3.30 BSC<br>3.30 BSC<br>0.130 BSC<br>0.130 BSC<br>0.23<br>0.30<br>0.40<br>0.009<br>0.012<br>0.016|1.40<br>1.50<br>0<br>−−−<br>�<br>1.60<br>12�<br>SIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>ROLLING DIMENSION: MILLIMETERS.<br>SION D1 AND E1 DO NOT INCLUDE MOLD FLASH<br>RUSIONS OR GATE BURRS.<br>**MIN**<br>**NOM**<br>**MILLIMETERS**<br>0.70<br>0.75<br>0.00<br>−−−<br>0.23<br>0.30<br>0.15<br>0.20<br>2.95<br>3.05<br>1.98<br>2.11<br>2.95<br>3.05<br>1.47<br>1.60<br>0.65 BSC<br>0.30<br>0.41<br>0.65<br>0.80<br>0.30<br>0.43<br>0.06<br>0.13<br>**MAX**<br>0.80<br>0.05<br>0.40<br>0.25<br>3.15<br>2.24<br>3.15<br>1.73<br>0.51<br>0.95<br>0.56<br>0.20<br>0.055<br>0.059<br>0<br>−−−<br>�<br>0.063<br>12�<br>0.028<br>0.030<br>0.000<br>−−−<br>0.009<br>0.012<br>0.006<br>0.008<br>0.116<br>0.120<br>0.078<br>0.083<br>0.116<br>0.120<br>0.058<br>0.063<br>0.026 BSC<br>0.012<br>0.016<br>0.026<br>0.032<br>0.012<br>0.017<br>0.002<br>0.005<br>0.031<br>0.002<br>0.016<br>0.010<br>0.124<br>0.088<br>0.124<br>0.068<br>0.020<br>0.037<br>0.022<br>0.008<br>**MIN**<br>**NOM**<br>**INCHES**<br>**MAX**<br>3.30 BSC<br>3.30 BSC<br>0.130 BSC<br>0.130 BSC<br>0.23<br>0.30<br>0.40<br>0.009<br>0.012<br>0.016|1.40<br>1.50<br>0<br>−−−<br>�<br>1.60<br>12�<br>SIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>ROLLING DIMENSION: MILLIMETERS.<br>SION D1 AND E1 DO NOT INCLUDE MOLD FLASH<br>RUSIONS OR GATE BURRS.<br>**MIN**<br>**NOM**<br>**MILLIMETERS**<br>0.70<br>0.75<br>0.00<br>−−−<br>0.23<br>0.30<br>0.15<br>0.20<br>2.95<br>3.05<br>1.98<br>2.11<br>2.95<br>3.05<br>1.47<br>1.60<br>0.65 BSC<br>0.30<br>0.41<br>0.65<br>0.80<br>0.30<br>0.43<br>0.06<br>0.13<br>**MAX**<br>0.80<br>0.05<br>0.40<br>0.25<br>3.15<br>2.24<br>3.15<br>1.73<br>0.51<br>0.95<br>0.56<br>0.20<br>0.055<br>0.059<br>0<br>−−−<br>�<br>0.063<br>12�<br>0.028<br>0.030<br>0.000<br>−−−<br>0.009<br>0.012<br>0.006<br>0.008<br>0.116<br>0.120<br>0.078<br>0.083<br>0.116<br>0.120<br>0.058<br>0.063<br>0.026 BSC<br>0.012<br>0.016<br>0.026<br>0.032<br>0.012<br>0.017<br>0.002<br>0.005<br>0.031<br>0.002<br>0.016<br>0.010<br>0.124<br>0.088<br>0.124<br>0.068<br>0.020<br>0.037<br>0.022<br>0.008<br>**MIN**<br>**NOM**<br>**INCHES**<br>**MAX**<br>3.30 BSC<br>3.30 BSC<br>0.130 BSC<br>0.130 BSC<br>0.23<br>0.30<br>0.40<br>0.009<br>0.012<br>0.016|1.40<br>1.50<br>0<br>−−−<br>�<br>1.60<br>12�<br>SIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>ROLLING DIMENSION: MILLIMETERS.<br>SION D1 AND E1 DO NOT INCLUDE MOLD FLASH<br>RUSIONS OR GATE BURRS.<br>**MIN**<br>**NOM**<br>**MILLIMETERS**<br>0.70<br>0.75<br>0.00<br>−−−<br>0.23<br>0.30<br>0.15<br>0.20<br>2.95<br>3.05<br>1.98<br>2.11<br>2.95<br>3.05<br>1.47<br>1.60<br>0.65 BSC<br>0.30<br>0.41<br>0.65<br>0.80<br>0.30<br>0.43<br>0.06<br>0.13<br>**MAX**<br>0.80<br>0.05<br>0.40<br>0.25<br>3.15<br>2.24<br>3.15<br>1.73<br>0.51<br>0.95<br>0.56<br>0.20<br>0.055<br>0.059<br>0<br>−−−<br>�<br>0.063<br>12�<br>0.028<br>0.030<br>0.000<br>−−−<br>0.009<br>0.012<br>0.006<br>0.008<br>0.116<br>0.120<br>0.078<br>0.083<br>0.116<br>0.120<br>0.058<br>0.063<br>0.026 BSC<br>0.012<br>0.016<br>0.026<br>0.032<br>0.012<br>0.017<br>0.002<br>0.005<br>0.031<br>0.002<br>0.016<br>0.010<br>0.124<br>0.088<br>0.124<br>0.068<br>0.020<br>0.037<br>0.022<br>0.008<br>**MIN**<br>**NOM**<br>**INCHES**<br>**MAX**<br>3.30 BSC<br>3.30 BSC<br>0.130 BSC<br>0.130 BSC<br>0.23<br>0.30<br>0.40<br>0.009<br>0.012<br>0.016|1.40<br>1.50<br>0<br>−−−<br>�<br>1.60<br>12�<br>SIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>ROLLING DIMENSION: MILLIMETERS.<br>SION D1 AND E1 DO NOT INCLUDE MOLD FLASH<br>RUSIONS OR GATE BURRS.<br>**MIN**<br>**NOM**<br>**MILLIMETERS**<br>0.70<br>0.75<br>0.00<br>−−−<br>0.23<br>0.30<br>0.15<br>0.20<br>2.95<br>3.05<br>1.98<br>2.11<br>2.95<br>3.05<br>1.47<br>1.60<br>0.65 BSC<br>0.30<br>0.41<br>0.65<br>0.80<br>0.30<br>0.43<br>0.06<br>0.13<br>**MAX**<br>0.80<br>0.05<br>0.40<br>0.25<br>3.15<br>2.24<br>3.15<br>1.73<br>0.51<br>0.95<br>0.56<br>0.20<br>0.055<br>0.059<br>0<br>−−−<br>�<br>0.063<br>12�<br>0.028<br>0.030<br>0.000<br>−−−<br>0.009<br>0.012<br>0.006<br>0.008<br>0.116<br>0.120<br>0.078<br>0.083<br>0.116<br>0.120<br>0.058<br>0.063<br>0.026 BSC<br>0.012<br>0.016<br>0.026<br>0.032<br>0.012<br>0.017<br>0.002<br>0.005<br>0.031<br>0.002<br>0.016<br>0.010<br>0.124<br>0.088<br>0.124<br>0.068<br>0.020<br>0.037<br>0.022<br>0.008<br>**MIN**<br>**NOM**<br>**INCHES**<br>**MAX**<br>3.30 BSC<br>3.30 BSC<br>0.130 BSC<br>0.130 BSC<br>0.23<br>0.30<br>0.40<br>0.009<br>0.012<br>0.016|
|---|---|---|---|---|---|---|---|
||**DIM**|**MILLIMETERS**|||**INCHES**|||
|||**MIN**|**NOM**|**MAX**|**MIN**|**NOM**|**MAX**|
||**A**|0.70|0.75|0.80|0.028|0.030|0.031|
||**A1**<br>**b**|0.00<br>023|−−−<br>030|0.05<br>040|0.000<br>0009|−−−<br>0012|0.002<br>0016|
||**c**|.<br>0.15|.<br>0.20|.<br>0.25|.<br>0.006|.<br>0.008|.<br>0.010|
||**D**<br>|3.30 BSC|||0.130 BSC|||
||**D1**<br>**D2**|2.95<br>1.98|3.05<br>2.11|3.15<br>2.24|0.116<br>0.078|0.120<br>0.083|0.124<br>0.088|
||**E**|3.30 BSC|||0.130 BSC|||
||**E1**|295|305|315|0116|0120|0124|
||**E2**|.<br>1.47|.<br>1.60|.<br>1.73|.<br>0.058|.<br>0.063|.<br>0.068|
||**E3**|0.23|0.30|0.40|0.009|0.012|0.016|
||**e**<br><br>|0.65 BSC<br><br><br><br><br><br>|||0.026 BSC<br><br><br><br><br><br>|||
||**G**<br>**K**|0.30<br>0.65|0.41<br>0.80|0.51<br>0.95|0.012<br>0.026|0.016<br>0.032|0.020<br>0.037|
||**L**|0.30|0.43|0.56|0.012|0.017|0.022|
||**L1**|006|013|020|0002|0005|0008|
||**M**<br>|1.40<br>.|1.50<br>.|1.60<br>.|0.055<br>.|0.059<br>.|0.063<br>.|
||**�**|0<br>�|−−−|12�|0<br>�|−−−|12�|



## **SOLDERING FOOTPRINT*** 

**==> picture [179 x 145] intentionally omitted <==**

**----- Start of picture text -----**<br>
8X<br>0.42 0.65 4X<br>PITCH 0.66<br>PACKAGE<br>OUTLINE<br>3.60<br>2.30<br>0.75 0.57<br>0.47 2.37<br>3.46<br>DIMENSION: MILLIMETERS<br>**----- End of picture text -----**<br>


## **GENERIC** 

## **MARKING DIAGRAM*** 

**==> picture [44 x 39] intentionally omitted <==**

**----- Start of picture text -----**<br>
1<br>XXXXX<br>AYWW �<br>�<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the **onsemi** Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

XXXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week � = Pb−Free Package 

- *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ � ”, may or may not be present. Some products may not follow the Generic Marking. 

**==> picture [492 x 37] intentionally omitted <==**

**----- Start of picture text -----**<br>
Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98AON30561E Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: WDFN8 3.3X3.3, 0.65P PAGE 1 OF 1<br>**----- End of picture text -----**<br>


**onsemi** and                     are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. 

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 Semiconductor Components Industries, LLC, 2019 

**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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**==> picture [232 x 43] intentionally omitted <==**

 



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---

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