# Schottky Rectifier, 120 V, 20 A, Dual Common Cathode, TO-220AB, 3 Pins, 1.12 V

![Product image](https://novapart.co/image/farnell:2114699/)

**URL**: https://novapart.co/products/NTSV20120CTG/schottky-rectifier-120-v-20-a-dual-common-cathode
**SKU**: NTSV20120CTG
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Schottky Rectifier Diodes
**Price**: €0.1370
**Stock**: 10+

## Description

Repetitive Reverse Voltage Vrrm Max:120V; Forward Current If(AV):20A; Diode Configuration:Dual Common Cathode; Diode Case Style:TO-220AB; No. of Pins:3Pins; Forward Voltage VF Max

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Product Range | NTSV2 |
| Qualification | - |
| Diode Mounting | Through Hole |
| Diode Case Style | TO-220AB |
| Diode Configuration | Dual Common Cathode |
| Forward Voltage Max | 1.12V |
| Forward Surge Current | 100A |
| Average Forward Current | 20A |
| Operating Temperature Max | 150°C |
| Repetitive Peak Reverse Voltage | 120V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2114699/)

## NTSV20120CT 

## Very Low Forward Voltage Trench-based Schottky Rectifier 

## **Exceptionally Low VF = 0.557 V at IF = 5 A** 

**http://onsemi.com** 

## **Features** 

- Fine Lithography Trench−based Schottky Technology for Very Low Forward Voltage and Low Leakage 

- Fast Switching with Exceptional Temperature Stability 

- Low Power Loss and Lower Operating Temperature 

- Higher Efficiency for Achieving Regulatory Compliance 

- Low Thermal Resistance 

- High Surge Capability 

- This Device is Pb−Free, Halogen Free/BFR Free and is RoHS Compliant 

## **Typical Applications** 

- Switching Power Supplies including Notebook/Netbook Adapters, ATX and Flat Panel Display 

- High Frequency and DC−DC Converters 

- Freewheeling and OR−ing Diodes 

- Reverse Battery Protection 

- Instrumentation 

**==> picture [105 x 207] intentionally omitted <==**

**----- Start of picture text -----**<br>
PIN CONNECTIONS<br>1<br>2, 4<br>3<br>. 4<br>1<br>2<br>3<br>TO−220<br>CASE 221A<br>STYLE 6<br>**----- End of picture text -----**<br>


## **MARKING DIAGRAM** 

## **Mechanical Characteristics** 

- Case: Epoxy, Molded 

- Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in 

- Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable 

- Lead Temperature for Soldering Purposes: 260°C Maximum for 10 sec 

AY WW TSV20120Cx AKA A = Assembly Location Y = Year WW = Work Week AKA = Polarity Designator x = G or H G = Pb−Free Package H = Halide−Free Package 

|**Device**<br>~~ir~~|**Package**<br>~~ir~~|**Shipping**<br>~~ir~~|
|---|---|---|
|NTSV20120CTG<br>~~ir~~|TO−220<br>(Pb−Free)<br>~~ir~~|50 Units / Rail<br>~~ir~~|



Publication Order Number: **NTSV20120CT/D** 

**1** 

© Semiconductor Components Industries, LLC, 2014 **September, 2014 − Rev. 1** 

**NTSV20120CT** 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|120|V|
|Average Rectified Forward Current<br>(Rated VR, TC= 115°C)<br>Per Device<br>Per Diode|IF(AV)|20<br>10|A|
|Peak Repetitive Forward Current<br>(Rated VR, Square Wave, 20 kHz, TC= 110°C)<br>Per Device<br>Per Diode|IFRM|40<br>20|A|
|Non-repetitive Peak Surge Current<br>(Surge applied at rated load conditions halfwave, single phase, 60 Hz)|IFSM|100|A|
|Operating Junction Temperature|TJ|−40 to +150|°C|
|Storage Temperature|Tstg|−40 to +150|°C|
|Voltage Rate of Change (Rated VR)|dv/dt|10,000|V/�s|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Maximum Thermal Resistance<br>Junction−to−Case<br>Junction−to−Ambient|R�JC<br>R�JA|2.0<br>70|°C/W|



## **ELECTRICAL CHARACTERISTICS** (Per Leg unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(Per Leg unless otherwise noted)|||||
|---|---|---|---|---|
|**Rating**|**Symbol**|**Typ**|**Max**|**Unit**|
|Maximum Instantaneous Forward Voltage (Note 1)<br>(IF= 5 A, TJ= 25°C)<br>(IF= 10 A, TJ= 25°C)<br>(IF= 5 A, TJ= 125°C)<br>(IF= 10 A, TJ= 125°C)|vF|0.654<br>0.874<br>0.557<br>0.650|−<br>1.12<br>−<br>0.86|V|
|Maximum Instantaneous Reverse Current (Note 1)<br>(VR= 90 V, TJ= 25°C)<br>(VR= 90 V, TJ= 125°C)<br>(Rated dc Voltage, TJ= 25°C)<br>(Rated dc Voltage, TJ= 125°C)|IR|5.8<br>4.9<br>16.1<br>8.9|700<br>100|�A<br>mA<br>�A<br>mA|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0% 

**http://onsemi.com** 

**2** 

**NTSV20120CT** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [491 x 607] intentionally omitted <==**

**----- Start of picture text -----**<br>
100 100<br>TA = 150 ° C TA = 25 ° C 10 TA = 150 ° C<br>10 TA = 125 ° C<br>1<br>TA = 125 ° C<br>0.1<br>1<br>0.01<br>TA = 25 ° C<br>0.1 0.001<br>0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 20 30 40 50 60 70 80 90 100 110 120<br>VF, INSTANTANEOUS FORWARD VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V)<br>Figure 1. Typical Instantaneous Forward Figure 2. Typical Reverse Characteristics<br>Characteristics<br>10,000 20<br>TJ = 25 ° C R � JC = 1.3 ° C/W<br>dc<br>15<br>1000<br>10 Square Wave<br>100<br>5<br>10 0<br>0.1 1 10 100 0 20 40 60 80 100 120 140<br>VR, REVERSE VOLTAGE (V) TC, CASE TEMPERATURE ( ° C)<br>Figure 3. Typical Junction Capacitance Figure 4. Current Derating per Leg<br>40 30<br>35 R � JC = 1.3 ° C/W IPK/IAV = 20 IPK/IAV = 10<br>dc 25<br>30<br>25 20 IPK/IAV = 5<br>Square Wave<br>20 15<br>Square Wave<br>15<br>10<br>10 dc<br>5<br>5 TJ = 150 ° C<br>0 0<br>0 20 40 60 80 100 120 140 0 2 4 6 8 10 12 14<br>TC, CASE TEMPERATURE ( ° C) IF(AV), AVERAGE FORWARD CURRENT (A)<br>Figure 5. Current Derating Figure 6. Forward Power Dissipation<br>CURRENT (A)<br>CURRENT (mA)<br>, INSTANTANEOUS FORWARDiF , INSTANTANEOUS REVERSEIR<br>CURRENT (A)<br>, AVERAGE FORWARD<br>IF(AV)<br>C, JUNCTION CAPACITANCE (pF)<br>ER DISSIPATION (W)<br>, AVERAGE FORWARD POW-<br>, AVERAGE FORWARD CURRENT (A) F(AV)<br>IF(AV) P<br>**----- End of picture text -----**<br>


**http://onsemi.com** 

**3** 

**NTSV20120CT** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [490 x 172] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>1 50%<br>20%<br>10%<br>0.1 5% P(pk)<br>t1<br>2%<br>t2<br>1% Single Pulse DUTY CYCLE, D = t1/t2<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t, PULSE TIME (sec)<br>C/W)<br>°<br>MAL RESISTANCE (<br>R(t), TYPICAL TRANSIENT THER-<br>**----- End of picture text -----**<br>


**Figure 7. Typical Transient Thermal Response** 

**http://onsemi.com** 

**4** 

**NTSV20120CT** 

## **PACKAGE DIMENSIONS** 

**TO−220** CASE 221A−09 ISSUE AH 

**==> picture [233 x 185] intentionally omitted <==**

**----- Start of picture text -----**<br>
SEATING<br>−T− PLANE<br>B F C<br>T S<br>4<br>Q A<br>1 2 3 U<br>H<br>K<br>Z<br>L R<br>T V e J |<br>G<br>D<br>;<br>N<br>**----- End of picture text -----**<br>


NOTES: 

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 

2. CONTROLLING DIMENSION: INCH. 

3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. 

|**DIM**|**INCHES**|**INCHES**|**MILLIMETERS**|**MILLIMETERS**|
|---|---|---|---|---|
||**MIN**<br>**INCHES**|**MAX**<br>**INCHES**|**MIN**<br>**MILLIMETERS**|**MAX**<br>**MILLIMETERS**|
|**DIM**<br>**A**|**MIN**<br>0.570|**MAX**<br>0.620|**MIN**<br>14.48|**MAX**<br>15.75|
|**B**|0.380|0.415|9.66|10.53|
|**B**<br>**C**|0.380<br>0.160|0.415<br>0.190|9.66<br>4.07|10.53<br>4.83|
|**D**|0.025|0.038|0.64|0.96|
|**F**|0.142|0.161|3.61|4.09|
|**G**|0.095|0.105|2.42|2.66|
|**H**|0.110|0.161|2.80|4.10|
|**J**|0.014|0.024|0.36|0.61|
|**K**|0.500|0.562|12.70|14.27|
|**L**|0.045|0.060|1.15|1.52|
|**N**|0.190|0.210|4.83|5.33|
|**Q**|0.100|0.120|2.54|3.04|
|**Q**<br>**R**<br>EEE|0.100<br>0.080<br>EEE|0.120<br>0.110<br>EEE|2.54<br>2.04<br>EEE|3.04<br>2.79<br>EEE|
|**S**<br>EEE|0.045<br>EEE|0.055<br>EEE|1.15<br>EEE|1.39<br>EEE|
|**S**<br>**T**<br>EEE|0.045<br>0.235<br>EEE|0.055<br>0.255<br>EEE|1.15<br>5.97<br>EEE|1.39<br>6.47<br>EEE|
|**U**<br>EEE|0.000<br>EEE|0.050<br>EEE|0.00<br>EEE|1.27<br>EEE|
|**V**<br>EEE|0.045<br>EEE|---<br>EEE|1.15<br>EEE|---<br>EEE|
|**Z**<br>EEE|---<br>EEE|0.080<br>EEE|---<br>EEE|2.04<br>EEE|



ON Semiconductor and the         are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf.  SCILLC reserves the right to make changes without further notice to any products herein.  SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time.  All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.  SCILLC does not convey any license under its patent rights nor the rights of others.  SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.  Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.  SCILLC is an Equal Opportunity/Affirmative Action Employer.  This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

## **LITERATURE FULFILLMENT** : 

Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Email** : orderlit@onsemi.com 

**N. American Technical Support** : 800−282−9855 Toll Free USA/Canada 

**ON Semiconductor Website** : **www.onsemi.com** 

**Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit Phone: 421 33 790 2910 **Japan Customer Focus Center** For additional information, please contact your local Phone: 81−3−5817−1050 Sales Representative 

**http://onsemi.com** 

**NTSV20120CT/D** 

**5** 



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