# Schottky Rectifier, 100 V, 20 A, Dual Common Cathode, TO-220AB, 3 Pins, 830 mV
**URL**: https://novapart.co/products/NTST20100CTG/schottky-rectifier-100-v-20-a-dual-common-cathode
**SKU**: NTST20100CTG
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Schottky Rectifier Diodes
**Price**: €0.9480
**Stock**: 100+
**Lead Time**: 36 days (indicative)
## Description
Repetitive Reverse Voltage Vrrm Max:100V; Forward Current If(AV):20A; Diode Configuration:Dual Common Cathode; Diode Case Style:TO-220AB; No; Available until stocks are exhausted
## Specifications
| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Diode Mounting | Through Hole |
| Diode Case Style | TO-220AB |
| Diode Configuration | Dual Common Cathode |
| Forward Voltage Max | 830mV |
| Forward Surge Current | 150A |
| Average Forward Current | 20A |
| Operating Temperature Max | 150°C |
| Repetitive Peak Reverse Voltage | 100V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2728039/)
## NTST20100CTG, NTSB20100CT-1G, NTSJ20100CTG, NTSB20100CTG
# Trench-based Dual Schottky Rectifier, Very Low Forward Voltage, 20A, 100V
**www.onsemi.com**
## **PIN CONNECTIONS**
1 3
2, 4
## **Features**
- Fine Lithography Trench−based Schottky Technology for Very Low Forward Voltage and Low Leakage
**==> picture [483 x 227] intentionally omitted <==**
**----- Start of picture text -----**
4
• Fast Switching with Exceptional Temperature Stability 4
• Low Power Loss and Lower Operating Temperature
• Higher Efficiency for Achieving Regulatory Compliance
• Low Thermal Resistance
• High Surge Capability
• These are Pb−Free Devices TO−220AB I2PAK
1 a CASE 221A 1 CASE 418D
Typical Applications 2 3 STYLE 6 2 3 STYLE 3
• Switching Power Supplies including Notebook / Netbook Adapters,
ATX and Flat Panel Display 4
• High Frequency and DC−DC Converters
• Freewheeling and OR−ing diodes
• Reverse Battery Protection
• Instrumentation
TO−220FP D2PAK
Mechanical Characteristics
1 q CASE 221AH CASE 418B
• Case: Epoxy, Molded 2
3
**----- End of picture text -----**
- Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in
- Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
- Lead Temperature for Soldering Purposes: 260°C Maximum for 10 sec
## **ORDERING INFORMATION**
See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet.
Publication Order Number: **NTST20100CT/D**
**1**
© Semiconductor Components Industries, LLC, 2016 **July, 2016 − Rev. 7**
**NTST20100CTG, NTSB20100CT−1G, NTSJ20100CTG, NTSB20100CTG**
## **MAXIMUM RATINGS**
|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage|VRRM
VRWM
VR|100|V|
|Average Rectified Forward Current
(Rated VR, TC= 130°C)
Per device
Per diode|IF(AV)|20
10|A|
|Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz, TC= 125°C)
Per device
Per diode|IFRM|40
20|A|
|Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)|IFSM|150|A|
|Operating Junction Temperature|TJ|−40 to +150|°C|
|Storage Temperature|Tstg|−40 to +150|°C|
|Voltage Rate of Change (Rated VR)|dv/dt|10,000|V/�s|
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
## **THERMAL CHARACTERISTICS**
|**THERMAL CHARACTERISTICS**||||||
|---|---|---|---|---|---|
|**Rating**|**Symbol**|**NTST20100CTG,**
**NTSB20100CT−1G**|**NTSB20100CTG**|**NTSJ20100CTG**|**Unit**|
|Maximum Thermal Resistance per Diode
Junction−to−Case
Junction−to−Ambient|R�JC
R�JA|2.5
70|1.5
46.9|4.49
105|°C/W
°C/W|
## **ELECTRICAL CHARACTERISTICS** (Per Leg unless otherwise noted)
|**ELECTRICAL CHARACTERISTICS**(Per Leg unless otherwise noted)|||||
|---|---|---|---|---|
|**Rating**|**Symbol**|Typ|**Max**|**Unit**|
|Maximum Instantaneous Forward Voltage (Note 1)
(IF= 5 A, TJ= 25°C)
(IF= 10 A, TJ= 25°C)
(IF= 5 A, TJ= 125°C)
(IF= 10 A, TJ= 125°C)|vF|0.55
0.65
0.50
0.58|−
0.83
−
0.68|V|
|Maximum Instantaneous Reverse Current (Note 1)
(VR= 70 V, TJ= 25°C)
(VR= 70 V, TJ= 125°C)
(Rated dc Voltage, TJ= 25°C)
(Rated dc Voltage, TJ= 125°C)|IR|17
5.3
−
12|−
−
800
25|�A
mA
�A
mA|
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 � s, Duty Cycle � 2.0%
**www.onsemi.com**
**2**
**NTST20100CTG, NTSB20100CT−1G, NTSJ20100CTG, NTSB20100CTG**
## **TYPICAL CHARACTERISITICS**
**==> picture [238 x 172] intentionally omitted <==**
**----- Start of picture text -----**
100
TA = 150°C
TA = 25°C
10
TA = 125°C
1.0
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
iF, INSTANTANEOUS FORWARD CURRENT (AMPS)
**----- End of picture text -----**
**Figure 1. Typical Forward Voltage**
**==> picture [247 x 170] intentionally omitted <==**
**----- Start of picture text -----**
100
TA = 150°C
10 TA = 125°C
1.0
0.1
0.01 TA = 25°C
0.001
20 30 40 50 60 70 80 90 100
VR, REVERSE VOLTAGE (VOLTS)
, REVERSE CURRENT (mA)
IR
**----- End of picture text -----**
**Figure 2. Typical Reverse Current**
**==> picture [245 x 171] intentionally omitted <==**
**----- Start of picture text -----**
10000
TJ = 25°C
1000
100
10
0.1 1 10 100
VR, REVERSE VOLTAGE (VOLTS)
, JUNCTION CAPACITANCE (pF)
J
C
**----- End of picture text -----**
**Figure 3. Typical Junction Capacitance**
**==> picture [235 x 173] intentionally omitted <==**
**----- Start of picture text -----**
20
R � JC = 1.3 ° C/W
dc
15
10
SQUARE WAVE
5
0
0 20 40 60 80 100 120 140
TC, CASE TEMPERATURE ( ° C)
, AVERAGE FORWARD CURRENT (A)
IF(AV)
**----- End of picture text -----**
**Figure 4. Current Derating per Leg**
**==> picture [492 x 174] intentionally omitted <==**
**----- Start of picture text -----**
40 20
R � JC = 1.3 ° C/W 18 IPK/IAV = 10 IPK/IAV = 5
35
dc 16
30 14 IPK/IAV = 20
25 12 SQUARE
WAVE
20 10 dc
SQUARE WAVE
8
15
6
10
4
5
2
TA = 150 ° C
0 0
0 20 40 60 80 100 120 140 0 4 8 12 16 20 24
TC, CASE TEMPERATURE ( ° C) IF(AV), AVERAGE FORWARD CURRENT (A)
ER DISSIPATION (W)
, AVERAGE FORWARD POW-
F(AV)
P
, AVERAGE FORWARD CURRENT (A)
IF(AV)
**----- End of picture text -----**
**Figure 5. Current Derating**
**Figure 6. Forward Power Dissipation**
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**3**
**NTST20100CTG, NTSB20100CT−1G, NTSJ20100CTG, NTSB20100CTG**
## **TYPICAL CHARACTERISITICS**
**==> picture [495 x 618] intentionally omitted <==**
**----- Start of picture text -----**
10
rTeVdE TTTTTTTSV
TTT 50% Duty Cycle
1 PTEerrs
ee oetT
20%
pt
a Me ea TTT
10%
iii Hee — ott | |
5%
0.1 PAMI EAI TIE IT ewTLf $L Ill
2%
pe | eerie Pe ea a ee eee t TT
Poon eT 2 TTT
1%
0.01 pt Single Pulse HEHEHE tse
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t, Pulse Time (sec)
Figure 7. Typical Transient Thermal Response, Junction−to−Case for NTST20100CT and NTSB20100CT−1G
10
50% Duty Cycle
FSR SEER tH
20%
1 EIN Na|TLE SEE crm eeeILIE|
Sen 10% eh
Le 5% er ee San ttt LLC
2%
0.1 mo
=
1%
Re
0.01 cal||
Single Pulse
LT OOOQ OO OG GG GO NG
0.001 LE TTLTTETTTTE LEME EEE EET ETE ETT EEE ETE
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t, Pulse Time (sec)
Figure 8. Typical Transient Thermal Response, Junction−to−Case for NTSJ20100CTG
1 [J J TIIIIil JT JT TITIIiil Jy JT TITIIIIvl J. J, TTIIIivJ JT J TTIJIIi7 J. JT TITTIiiI J. 7 TTITIIiIv JT , TT/IIiy JT J JT TIJIIM
ee VV VV a
a ee ee ee ee 0 ee ee ee ee ee ee ee ll
ee
50% Duty Cycle mr ETT TIT
PI --__.. ——— —_—__----- ————_ —— ==
eee eae a
mn 20% RR
0.1 4 eA HH LIN LL ELLIE LT
a— 10% St eeee tt eeett eel ]{
| TU aA Tt (|
5%
|PDAse 22a | | Pp (ne) t- | | | | lI [|
2%
tH be |
Leer 1% CnC TTT TIE TT vee |
0.01 TIE Single Pulse TTI, EEA EUIN TIE ETI ouroveis-o =i |
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t, Pulse Time (sec)
C/W)
°
RESISTANCE (
R(t), TYPICAL TRANSIENT THERMAL
C/W)
°
RESISTANCE (
R(t), TYPICAL TRANSIENT THERMAL
C/W)
°
RESISTANCE (
R(t), TYPICAL TRANSIENT THERMAL
**----- End of picture text -----**
**Figure 9. Typical Transient Thermal Response for NTSB20100CTG**
**www.onsemi.com**
**4**
**NTST20100CTG, NTSB20100CT−1G, NTSJ20100CTG, NTSB20100CTG**
## **ORDERING INFORMATION**
|**ORDERING INFORMATION**|||
|---|---|---|
|**Device**|**Package**|**Shipping**|
|NTST20100CTG|TO−220AB
(Pb−Free)|50 Units / Rail|
|NTSB20100CT−1G|I2PAK
(Pb−Free)|50 Units / Rail|
|NTSJ20100CTG|TO−220FP
(Halide−Free)|50 Units / Rail|
|NTSB20100CTG|D2PAK
(Pb−Free)|50 Units / Rail|
|NTSB20100CTT4G|D2PAK
(Pb−Free)|800 / Tape & Reel|
## **MARKING DIAGRAMS**
**==> picture [314 x 197] intentionally omitted <==**
**----- Start of picture text -----**
AYWW
AYWW AYWW AYWW TS20100CG
TS2100Cx TS20100CG TS20100CG AKA
AKA
AKA AKA
TO−220AB TO−220FP I [2] PAK D [2] PAK
A = Assembly Location
Y = Year
WW = Work Week
AKA = Polarity Designator
x = G or H
G = Pb−Free Package
H = Halide−Free Package
**----- End of picture text -----**
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**5**
MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS**
**TO−220** CASE 221A ISSUE AK
DATE 13 JAN 2022
**==> picture [34 x 7] intentionally omitted <==**
**----- Start of picture text -----**
SCALE 1:1
**----- End of picture text -----**
**==> picture [338 x 122] intentionally omitted <==**
**----- Start of picture text -----**
STYLE 1: STYLE 2: STYLE 3: STYLE 4:
PIN 1. BASE PIN 1. BASE PIN 1. CATHODE PIN 1. MAIN TERMINAL 1
2. COLLECTOR 2. EMITTER 2. ANODE 2. MAIN TERMINAL 2
3. EMITTER 3. COLLECTOR 3. GATE 3. GATE
4. COLLECTOR 4. EMITTER 4. ANODE 4. MAIN TERMINAL 2
STYLE 5: STYLE 6: STYLE 7: STYLE 8:
PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE PIN 1. CATHODE
2. DRAIN 2. CATHODE 2. ANODE 2. ANODE
3. SOURCE 3. ANODE 3. CATHODE 3. EXTERNAL TRIP/DELAY
4. DRAIN 4. CATHODE 4. ANODE 4. ANODE
STYLE 9: STYLE 10: STYLE 11: STYLE 12:
PIN 1. GATE PIN 1. GATE PIN 1. DRAIN PIN 1. MAIN TERMINAL 1
2. COLLECTOR 2. SOURCE 2. SOURCE 2. MAIN TERMINAL 2
3. EMITTER 3. DRAIN 3. GATE 3. GATE
4. COLLECTOR 4. SOURCE 4. SOURCE 4. NOT CONNECTED
**----- End of picture text -----**
**==> picture [492 x 37] intentionally omitted <==**
**----- Start of picture text -----**
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98ASB42148B Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DESCRIPTION: TO−220 PAGE 1 OF 1
**----- End of picture text -----**
**onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others.
www.onsemi.com
© Semiconductor Components Industries, LLC, 2019
MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS**
**TO−220 FULLPACK, 3−LEAD** CASE 221AH ISSUE F
**==> picture [471 x 480] intentionally omitted <==**
**----- Start of picture text -----**
CASE 221AH
ISSUE F
DATE 30 SEP 2014
A B SEATINGPLANE NOTES:1. DIMENSIONING AND TOLERANCING PER ASME
E Y14.5M, 1994.
E/2 P A 2. CONTROLLING DIMENSION: MILLIMETERS.
¢ 0.14 M B A M H1 A1 3.4. CONTOUR UNCONTROLLED IN THIS AREA.DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH AND GATE
SCALE 1:1 PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO
EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE MEA
Q SURED AT OUTERMOST EXTREME OF THE PLASTIC BODY.
D C 5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION.
LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.00.
1 2 3 NOTE 3 6. CONTOURS AND FEATURES OF THE MOLDED PACKAGE BODY
MAY VARY WITHIN THE ENVELOP DEFINED BY DIMENSIONS A1
AND H1 FOR MANUFACTURING PURPOSES.
L L1 MILLIMETERS
DIM MIN MAX
A 4.30 4.70
A1 2.50 2.90
3X b c A2 2.50 2.90
3X rf b2 0.25 M B A M C | A2 b2b 0.541.10 0.841.40
c 0.49 0.79
e mi SIDE VIEW D 14.70 15.30
FRONT VIEW E 9.70 10.30
e 2.54 BSC
H1 6.60 7.10
L 12.50 14.73
L1 --- 2.80
P 3.00 3.40
SECTION D−D Q 2.80 3.20
A GENERIC
NOTE 6 MARKING DIAGRAM*
NOTE 6
H1
D D
XX
XXXXXXXXX
AWLYWWG
A SECTION A−A
ALTERNATE CONSTRUCTION
1
A = Assembly Location
WL = Wafer Lot
Y = Year
WW = Work Week
G = Pb−Free Package
**----- End of picture text -----**
DATE 30 SEP 2014
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH AND GATE PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE MEA SURED AT OUTERMOST EXTREME OF THE PLASTIC BODY.
5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.00.
**==> picture [141 x 26] intentionally omitted <==**
**----- Start of picture text -----**
STYLE 1: STYLE 2:
PIN 1. MAIN TERMINAL 1 PIN 1. CATHODE
2. MAIN TERMINAL 2 2. ANODE
3. GATE 3. GATE
**----- End of picture text -----**
- *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present.
Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON52577E** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DESCRIPTION: TO−220 FULLPACK, 3−LEAD PAGE 1 OF 1** ~~[1—_~~ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.
**PAGE 1 OF 1** ~~—_~~
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MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS**
DATE 16 OCT 2007
**I[2] PAK (TO−262)** CASE 418D−01 ISSUE D
**==> picture [430 x 288] intentionally omitted <==**
**----- Start of picture text -----**
C
E
SCALE 1:1 −B− V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
4 Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES MILLIMETERS
A DIM MIN MAX MIN MAX
W A 0.335 0.380 8.51 9.65
in 1 2 3 b e === B 0.380 0.406 9.65 10.31
C 0.160 0.185 4.06 4.70
D 0.026 0.035 0.66 0.89
F E 0.045 0.055 1.14 1.40
F 0.122 REF 3.10 REF
−T− G 0.100 BSC 2.54 BSC
SEATING H 0.094 0.110 2.39 2.79
PLANE K J 0.013 0.025 0.33 0.64
S K 0.500 0.562 12.70 14.27
S 0.390 REF 9.90 REF
V 0.045 0.070 1.14 1.78
W 0.522 0.551 13.25 14.00
G Ll : J =====
D 3 PL H
al
0.13 (0.005) M T B M
STYLE 1: STYLE 2: STYLE 3: STYLE 4:
PIN 1. BASE PIN 1. GATE PIN 1. ANODE PIN 1. GATE
2. COLLECTOR 2. DRAIN 2. CATHODE 2. COLLECTOR
3. EMITTER 3. SOURCE 3. ANODE 3. EMITTER
4. COLLECTOR 4. DRAIN 4. CATHODE 4. COLLECTOR
**----- End of picture text -----**
Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB16716C** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DESCRIPTION: I[2] PAK (TO−262) PAGE 1 OF 1** ~~——~~ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.
Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS**
## **D[2] PAK 3**
CASE 418B−04
**==> picture [442 x 456] intentionally omitted <==**
**----- Start of picture text -----**
ISSUE L
SCALE 1:1 NOTES:
C 1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
E 2. CONTROLLING DIMENSION: INCH.
−B− V 3. 418B−01 THRU 418B−03 OBSOLETE,NEW STANDARD 418B−04.
W
4 INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.340 0.380 8.64 9.65
B 0.380 0.405 9.65 10.29
A C 0.160 0.190 4.06 4.83
S D 0.020 0.035 0.51 0.89
1 2 3 E 0.045 0.055 1.14 1.40
F 0.310 0.350 7.87 8.89
G 0.100 BSC 2.54 BSC
−T− H 0.080 0.110 2.03 2.79
K J 0.018 0.025 0.46 0.64
SEATINGPLANE G J W KL 0.0900.052 0.0720.110 2.291.32 2.791.83
M 0.280 0.320 7.11 8.13
ae H N 0.197 REF 5.00 REF
D 3 PL P 0.079 REF 2.00 REF
R 0.039 REF 0.99 REF
0.13 (0.005) M T B M S 0.575 0.625 14.60 15.88
V 0.045 0.055 1.14 1.40
VARIABLE
CONFIGURATION
ZONE N P
R
U
L L L
M M M
F F F
VIEW W−W VIEW W−W VIEW W−W
1 2 3
STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5: STYLE 6:
PIN 1. BASE PIN 1. GATE PIN 1. ANODE PIN 1. GATE PIN 1. CATHODE PIN 1. NO CONNECT
2. COLLECTOR 2. DRAIN 2. CATHODE 2. COLLECTOR 2. ANODE 2. CATHODE
3. EMITTER 3. SOURCE 3. ANODE 3. EMITTER 3. CATHODE 3. ANODE
4. COLLECTOR 4. DRAIN 4. CATHODE 4. COLLECTOR 4. ANODE 4. CATHODE
**----- End of picture text -----**
DATE 17 FEB 2015
## **MARKING INFORMATION AND FOOTPRINT ON PAGE 2**
Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB42761B** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DESCRIPTION: D[2] PAK 3 PAGE 1 OF 2** ~~|eee1~~ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.
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© Semiconductor Components Industries, LLC, 2019
**==> picture [182 x 232] intentionally omitted <==**
**----- Start of picture text -----**
D [2] PAK 3
CASE 418B−04
ISSUE L
GENERIC
MARKING DIAGRAM*
xx AYWW
xxxxxxxxG
xxxxxxxxx xxxxxxxxG
AYWW
AWLYWWG AKA
oe
IC Standard Rectifier
xx = Specific Device Code
A = Assembly Location
WL = Wafer Lot
Y = Year
WW = Work Week
G = Pb−Free Package
AKA = Polarity Indicator
**----- End of picture text -----**
DATE 17 FEB 2015
- *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present.
## **SOLDERING FOOTPRINT***
**==> picture [147 x 173] intentionally omitted <==**
**----- Start of picture text -----**
10.49
8.38
16.155 T L 7
2X
3.504
2X
UE
1.016
5.080
aro
PITCH
DIMENSIONS: MILLIMETERS
**----- End of picture text -----**
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB42761B** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DESCRIPTION: D[2] PAK 3 PAGE 2 OF 2** ~~—~~ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.
Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
www.onsemi.com
© Semiconductor Components Industries, LLC, 2019
**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
## **PUBLICATION ORDERING INFORMATION**
**LITERATURE FULFILLMENT** : **TECHNICAL SUPPORT Email Requests to:** orderlit@onsemi.com **North American Technical Support: Europe, Middle East and Africa Technical Support:** Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910 **onsemi Website:** www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative
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## Links
- [View this product on Novapart](https://novapart.co/products/NTST20100CTG/schottky-rectifier-100-v-20-a-dual-common-cathode)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/onsemi/ntst20100ctg/schottky-rect-dual-100v-20a-to/dp/2728039)
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