# Schottky Rectifier, 120 V, 20 A, Dual Common Cathode, TO-220FP, 3 Pins, 1.1 V ![Product image](https://novapart.co/image/farnell:2114694/) **URL**: https://novapart.co/products/NTSJ20120CTG./schottky-rectifier-120-v-20-a-dual-common-cathode **SKU**: NTSJ20120CTG. **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Schottky Rectifier Diodes **Price**: €0.6000 **Stock**: 10+ ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 3Pins | | Product Range | NTSJ2 | | Diode Mounting | Through Hole | | Diode Case Style | TO-220FP | | Diode Configuration | Dual Common Cathode | | Forward Voltage Max | 1.1V | | Forward Surge Current | 120A | | Average Forward Current | 20A | | Operating Temperature Max | 150°C | | Repetitive Peak Reverse Voltage | 120V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2114694/) ## NTST20120CTG, NTSJ20120CTG, NTSB20120CT-1G, NTSB20120CTG, NTSB20120CTT4G ## Very Low Forward Voltage Trench-based Schottky Rectifier ## **Exceptionally Low VF = 0.54 V at IF = 5 A** **www.onsemi.com** **VERY LOW FORWARD VOLTAGE, LOW LEAKAGE SCHOTTKY BARRIER RECTIFIERS 20 AMPERES, 120 VOLTS** ## **Features** - Fine Lithography Trench−based Schottky Technology for Very Low Forward Voltage and Low Leakage **PIN CONNECTIONS** **==> picture [5 x 7] intentionally omitted <==** **----- Start of picture text -----**
1
**----- End of picture text -----**
- Fast Switching with Exceptional Temperature Stability 2, 4 - Low Power Loss and Lower Operating Temperature 3 - Higher Efficiency for Achieving Regulatory Compliance - Low Thermal Resistance **==> picture [438 x 18] intentionally omitted <==** **----- Start of picture text -----**
4
• High Surge Capability 4
**----- End of picture text -----**
**==> picture [226 x 106] intentionally omitted <==** **----- Start of picture text -----**
4
4
)
TO−220AB I2PAK
1 CASE 221A “ 1 CASE 418D
2 3 STYLE 6 2 3 STYLE 3
**----- End of picture text -----**
- Pb−Free and Halide−Free Packages are Available ## **Typical Applications** - Switching Power Supplies including Notebook / Netbook Adapters, ATX and Flat Panel Display - High Frequency and DC−DC Converters - Freewheeling and OR−ing diodes - Reverse Battery Protection **==> picture [485 x 103] intentionally omitted <==** **----- Start of picture text -----**
• Instrumentation 4
Mechanical Characteristics
• Case: Epoxy, Molded
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in
• Finish: All External Surfaces Corrosion Resistant and Terminal
TO−220FP D2PAK
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes: 260°C Maximum for°C Maximum forC Maximum for 1 q 2 CASE 221AH [2] CASE 418B
3
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- Lead Temperature for Soldering Purposes: 260°C Maximum for°C Maximum forC Maximum for 10 sec **ORDERING INFORMATION** See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Publication Order Number: **NTST20120CT/D** **1** © Semiconductor Components Industries, LLC, 2015 **January, 2015 − Rev. 5** ## **NTST20120CTG, NTSJ20120CTG, NTSB20120CT−1G, NTSB20120CTG, NTSB20120CTT4G** ## **MAXIMUM RATINGS** |**MAXIMUM RATINGS**|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage|VRRM
VRWM
VR|120|V| |Average Rectified Forward Current
(Rated VR, TC= 130°C)
Per device
Per diode|IF(AV)|20
10|A| |Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz, TC= 135°C)
Per device
Per diode|IFRM|40
20|A| |Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)|IFSM|120|A| |Operating Junction Temperature|TJ|−40 to +150|°C| |Storage Temperature|Tstg|−40 to +150|°C| |Voltage Rate of Change (Rated VR)|dv/dt|10,000|V/�s| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**|||||| |---|---|---|---|---|---| |**Rating**|**Symbol**|**NTST20120CTG**
**NTSB20120CT−1G**|**NTSB20120CTG**|**NTSJ20120CTG**|**Unit**| |Maximum Thermal Resistance per Diode
Junction−to−Case
Junction−to−Ambient|R�JC
R�JA|2.5
70|1.43
46.8|4.42
105|°C/W
°C/W| ## **ELECTRICAL CHARACTERISTICS** (Per Leg unless otherwise noted) |**ELECTRICAL CHARACTERISTICS**(Per Leg unless otherwise noted)||||| |---|---|---|---|---| |**Rating**|**Symbol**|**Typ**|**Max**|**Unit**| |Maximum Instantaneous Forward Voltage (Note 1)
(IF= 5 A, TJ= 25°C)
(IF= 10 A, TJ= 25°C)
(IF= 5 A, TJ= 125°C)
(IF= 10 A, TJ= 125°C)|vF|0.62
0.90
0.54
0.64|−
1.10
−
0.72|V| |Maximum Instantaneous Reverse Current (Note 1)
(VR= 90 V, TJ= 25°C)
(VR= 90 V, TJ= 125°C)
(Rated dc Voltage, TJ= 25°C)
(Rated dc Voltage, TJ= 125°C)|IR|12
6
−
17|−
−
700
100|�A
mA
�A
mA| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 � s, Duty Cycle � 2.0% **www.onsemi.com** **2** **NTST20120CTG, NTSJ20120CTG, NTSB20120CT−1G, NTSB20120CTG, NTSB20120CTT4G TYPICAL CHARACTERISITICS** **==> picture [492 x 606] intentionally omitted <==** **----- Start of picture text -----**
100 100
TA = 150°C TA = 25°C TA = 150 ° C
10
10 TA = 125°C TA = 125 ° C
1.0
0.1
1.0
0.01
TA = 25 ° C
0.1 0.001
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 20 30 40 50 60 70 80 90 100 110 120
vF, INSTANTANEOUS FORWARD VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 1. Typical Instantaneous Forward Figure 2. Typical Reverse Current
Characteristics Characteristics
10000 20
TJ = 25 ° C R � JC = 1.3 ° C/W
dc
15
1000
10 SQUARE WAVE
100
5
10 0
0.1 1 10 100 0 20 40 60 80 100 120 140
VR, REVERSE VOLTAGE (V) TC, CASE TEMPERATURE ( ° C)
Figure 3. Typical Junction Capacitance Figure 4. Current Derating per Leg
40 30
R � JC = 1.3 ° C/W IPK/IAV = 20 IPK/IAV = 10
35
dc 25
30 IPK/IAV = 5
20
25
20 SQUARE WAVE 15 SQUARE
WAVE
15
10
10 dc
5
5
TJ = 150 ° C
0 0
0 20 40 60 80 100 120 140 0 2 4 6 8 10 12 14
TC, CASE TEMPERATURE ( ° C) IF(AV), AVERAGE FORWARD CURRENT (A)
, INSTANTANEOUS REVERSE CURRENT (mA)
iF, INSTANTANEOUS FORWARD CURRENT (A) IR
, JUNCTION CAPACITANCE (pF)
J
C , AVERAGE FORWARD CURRENT (A)
IF(AV)
ER DISSIPATION (W)
, AVERAGE FORWARD POW-
F(AV)
, AVERAGE FORWARD CURRENT (A) P
IF(AV)
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**Figure 5. Current Derating** **Figure 6. Forward Power Dissipation** **www.onsemi.com** **3** ## **NTST20120CTG, NTSJ20120CTG, NTSB20120CT−1G, NTSB20120CTG, NTSB20120CTT4G TYPICAL CHARACTERISITICS** **==> picture [495 x 399] intentionally omitted <==** **----- Start of picture text -----**
10
PT TTTt)
a
1
50% Duty Cycle
Sooo nee cee eeeaa enettae a a | ia||
EETa ET nce ae ee ah ea eT
PCE 20% eee— a Tt
10% os
me ol
0.1
ome 5% TE ITE TTT eo J LY Ll
PS 2% rt ee ly CH
1% Single Pulse
0.01 LS e e eree EL OR DUTY CYCLE, D=tyt2 Iltll
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t, Pulse Time (sec)
Figure 7. Typical Transient Thermal Response for NTST20120CT and NTSB20120CT−1G
10
50% Duty Cycle
FSR RrtH
20% SE EEE EEE A SE een |
1
pTer
eee 10% Ee ai
ieee 5%
2%
0.1
meme ee [en] es Ss
1%
ee
Re
0.01 PeerTEI
Single Pulse
PT TTT TTTTT
0.001 aeae lll
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t, Pulse Time (sec)
C/W)
°
RESISTANCE (
R(t), TYPICAL TRANSIENT THERMAL
C/W)
°
RESISTANCE (
R(t), TYPICAL TRANSIENT THERMAL
**----- End of picture text -----**
**Figure 8. Typical Transient Thermal Response for NTSJ20120CTG** **==> picture [495 x 172] intentionally omitted <==** **----- Start of picture text -----**
1
ee
a 8 8 8 OO 8 OO GG
a a
Ammer 50% Duty Cycle IETS
Pee mmr TPIT TTT TTT PPP
20%
OH CHRSAAT ULTIMO TTT TTT
0.1 eee mean eeaITEP |
10%
Seae | Oe As—tii ee aa e le i l
5%
be= TAAL HHTet Pp (ne) t- | | | | I|
2%
A TTT TTT be |
FoF7200 1% an P| |
Single Pulse
0.01
Accs LE ANIME TATE TUTE EIT LL eurrovens ote
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t, Pulse Time (sec)
C/W)
°
RESISTANCE (
R(t), TYPICAL TRANSIENT THERMAL
**----- End of picture text -----**
**Figure 9. Typical Transient Thermal Response for NTSB20120CTG** **www.onsemi.com** **4** **NTST20120CTG, NTSJ20120CTG, NTSB20120CT−1G, NTSB20120CTG, NTSB20120CTT4G** ## **ORDERING INFORMATION** |**ORDERING INFORMATION**||| |---|---|---| |**Device**|**Package**|**Shipping**| |NTST20120CTG|TO−220AB
(Pb−Free)|50 Units / Rail| |NTSJ20120CTG|TO−220FP
(Halide−Free)|50 Units / Rail| |NTSB20120CT−1G|I2PAK
(Pb−Free)|50 Units / Rail| |NTSB20120CTG|D2PAK
(Pb−Free)|50 Units / Rail| |NTSB20120CTT4G|D2PAK
(Pb−Free)|800 / Tape & Reel| ## **MARKING DIAGRAMS** **==> picture [314 x 109] intentionally omitted <==** **----- Start of picture text -----**
AYWW
AYWW AYWW AYWW TS20120CG
TS20120Cx TS20120CG TS20120CG AKA
AKA
AKA AKA
TO−220AB TO−220FP I [2] PAK D [2] PAK
**----- End of picture text -----**
A = Assembly Location Y = Year WW = Work Week AKA = Polarity Designator x = G or H G = Pb−Free Package H = Halide−Free Package **www.onsemi.com** **5** **NTST20120CTG, NTSJ20120CTG, NTSB20120CT−1G, NTSB20120CTG, NTSB20120CTT4G PACKAGE DIMENSIONS** ## **TO−220** CASE 221A−09 ISSUE AH **==> picture [20 x 5] intentionally omitted <==** **----- Start of picture text -----**
NOTES:
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**==> picture [234 x 185] intentionally omitted <==** **----- Start of picture text -----**
SEATING
−T− PLANE
B F C
T S
4
Q A
1 2 3 U
H
K
Z
L R
V J
G
D
N
**----- End of picture text -----**
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. |3.|DIME
BODY
ALLO|E 6:
N 1.
ANODE
2.
CATHODE
3.
ANODE
4.
CATHODE
NSION Z DEFINES A ZONE WHERE ALL
AND LEAD IRREGULARITIES ARE
WED.
**MIN**
**MAX**
**MIN**
**MAX**
**MILLIMETERS**
**INCHES**
0.570
0.620
14.48
15.75
0.380
0.415
9.66
10.53
0.160
0.190
4.07
4.83
0.025
0.038
0.64
0.96
0.142
0.161
3.61
4.09
0.095
0.105
2.42
2.66
0.110
0.161
2.80
4.10
0.014
0.024
0.36
0.61
0.500
0.562
12.70
14.27
0.045
0.060
1.15
1.52
0.190
0.210
4.83
5.33
0.100
0.120
2.54
3.04
0.080
0.110
2.04
2.79
0.045
0.055
1.15
1.39
0.235
0.255
5.97
6.47
0.000
0.050
0.00
1.27
0.045
---
1.15
---
---
0.080
---
2.04|E 6:
N 1.
ANODE
2.
CATHODE
3.
ANODE
4.
CATHODE
NSION Z DEFINES A ZONE WHERE ALL
AND LEAD IRREGULARITIES ARE
WED.
**MIN**
**MAX**
**MIN**
**MAX**
**MILLIMETERS**
**INCHES**
0.570
0.620
14.48
15.75
0.380
0.415
9.66
10.53
0.160
0.190
4.07
4.83
0.025
0.038
0.64
0.96
0.142
0.161
3.61
4.09
0.095
0.105
2.42
2.66
0.110
0.161
2.80
4.10
0.014
0.024
0.36
0.61
0.500
0.562
12.70
14.27
0.045
0.060
1.15
1.52
0.190
0.210
4.83
5.33
0.100
0.120
2.54
3.04
0.080
0.110
2.04
2.79
0.045
0.055
1.15
1.39
0.235
0.255
5.97
6.47
0.000
0.050
0.00
1.27
0.045
---
1.15
---
---
0.080
---
2.04|E 6:
N 1.
ANODE
2.
CATHODE
3.
ANODE
4.
CATHODE
NSION Z DEFINES A ZONE WHERE ALL
AND LEAD IRREGULARITIES ARE
WED.
**MIN**
**MAX**
**MIN**
**MAX**
**MILLIMETERS**
**INCHES**
0.570
0.620
14.48
15.75
0.380
0.415
9.66
10.53
0.160
0.190
4.07
4.83
0.025
0.038
0.64
0.96
0.142
0.161
3.61
4.09
0.095
0.105
2.42
2.66
0.110
0.161
2.80
4.10
0.014
0.024
0.36
0.61
0.500
0.562
12.70
14.27
0.045
0.060
1.15
1.52
0.190
0.210
4.83
5.33
0.100
0.120
2.54
3.04
0.080
0.110
2.04
2.79
0.045
0.055
1.15
1.39
0.235
0.255
5.97
6.47
0.000
0.050
0.00
1.27
0.045
---
1.15
---
---
0.080
---
2.04|E 6:
N 1.
ANODE
2.
CATHODE
3.
ANODE
4.
CATHODE
NSION Z DEFINES A ZONE WHERE ALL
AND LEAD IRREGULARITIES ARE
WED.
**MIN**
**MAX**
**MIN**
**MAX**
**MILLIMETERS**
**INCHES**
0.570
0.620
14.48
15.75
0.380
0.415
9.66
10.53
0.160
0.190
4.07
4.83
0.025
0.038
0.64
0.96
0.142
0.161
3.61
4.09
0.095
0.105
2.42
2.66
0.110
0.161
2.80
4.10
0.014
0.024
0.36
0.61
0.500
0.562
12.70
14.27
0.045
0.060
1.15
1.52
0.190
0.210
4.83
5.33
0.100
0.120
2.54
3.04
0.080
0.110
2.04
2.79
0.045
0.055
1.15
1.39
0.235
0.255
5.97
6.47
0.000
0.050
0.00
1.27
0.045
---
1.15
---
---
0.080
---
2.04| |---|---|---|---|---|---| ||**DIM**|**INCHES**||**MILLIMETERS**|| |||**MIN**
|**MAX**
|**MIN**
|**MAX**
| ||**A**|0.570|0.620|14.48|15.75| ||**B**|0380|0415|966|1053| ||**C**|.
0.160|.
0.190|.
4.07|.
4.83| ||**D**|0.025|0.038|0.64|0.96| ||**F**|0.142|0.161|3.61|4.09| ||**G**|0.095|0.105|2.42|2.66| ||**H**|0.110|0.161|2.80|4.10| ||**J**|0.014|0.024|0.36|0.61| ||**K**|0.500|0.562|12.70|14.27| ||**L**|0.045|0.060|1.15|1.52| ||**N**|0.190|0.210|4.83|5.33| ||**Q**|0100|0120|254|304| ||**R**|.
0.080|.
0.110|.
2.04|.
2.79| ||**S**|0045|0055|115|139| ||**T**|.
0.235|.
0.255|.
5.97|.
6.47| ||**U**|0.000|0.050|0.00|1.27| ||**V**|0.045|---|1.15|---| ||**Z**|---|0.080|---|2.04| ||STYL
PI||||| **TO−220 FULLPACK, 3−LEAD** CASE 221AH ISSUE B **==> picture [406 x 185] intentionally omitted <==** **----- Start of picture text -----**
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
A B SEATINGPLANE Y14.5M, 1994.
E 2. CONTROLLING DIMENSION: MILLIMETERS.
A 3. CONTOUR UNCONTROLLED IN THIS AREA.
E/2 P H1 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH
0.14 M B A M A1 AND GATE PROTRUSIONS. MOLD FLASH AND GATE
PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE
4 DIMENSIONS ARE TO BE MEASURED AT OUTERMOST
Q EXTREME OF THE PLASTIC BODY.
D 5. DIMENSION b2 DOES NOT INCLUDE DAMBAR
C PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION
1 2 3 NOTE 3 SHALL NOT EXCEED 2.00.
MILLIMETERS
DIM MIN MAX
L L1 A 4.30 4.70
A1 2.50 2.90
A2 2.50 2.70
b 0.54 0.84
3X b c b2 1.10 1.40
c 0.49 0.79
3X b2 0.25 M B A M C A2 D 14.70 15.30
E 9.70 10.30
e e 2.54 BSC
H1 6.70 7.10
L 12.70 14.73
**----- End of picture text -----**
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH AND GATE PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE MEASURED AT OUTERMOST EXTREME OF THE PLASTIC BODY. 5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.00. |||| |---|---|---| |**DIM**|**MILLIMETERS**|| ||**MIN**|**MAX**| |**A**|4.30|4.70| |**A1**|2.50|2.90| |**A2**|2.50|2.70| |**b**|054|084| |**b2**|.
1.10|.
1.40| |**c**
|0.49
|0.79
| |**D**
**E**|14.70
9.70|15.30
10.30| |**e**|2.54 BSC|| |**H1**|6.70|7.10| |**L**|12.70|14.73| |**L1**|---|2.80| |**P**|3.00|3.40| |**Q**|2.80|3.20| **www.onsemi.com** **6** ## **NTST20120CTG, NTSJ20120CTG, NTSB20120CT−1G, NTSB20120CTG, NTSB20120CTT4G PACKAGE DIMENSIONS** **D[2] PAK 3** CASE 418B−04 ISSUE K **==> picture [441 x 366] intentionally omitted <==** **----- Start of picture text -----**
NOTES:
C 1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
E 2. CONTROLLING DIMENSION: INCH.
−B− V 3. 418B−01 THRU 418B−03 OBSOLETE,NEW STANDARD 418B−04.
W
4 INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.340 0.380 8.64 9.65
B 0.380 0.405 9.65 10.29
A C 0.160 0.190 4.06 4.83
S D 0.020 0.035 0.51 0.89
1 2 3 E 0.045 0.055 1.14 1.40
F 0.310 0.350 7.87 8.89
G 0.100 BSC 2.54 BSC
−T− H 0.080 0.110 2.03 2.79
K J 0.018 0.025 0.46 0.64
SEATINGPLANE G J W KL 0.0900.052 0.0720.110 2.291.32 2.791.83
M 0.280 0.320 7.11 8.13
H N 0.197 REF 5.00 REF
D 3 PL P 0.079 REF 2.00 REF
R 0.039 REF 0.99 REF
0.13 (0.005) M T B M S 0.575 0.625 14.60 15.88
V 0.045 0.055 1.14 1.40
VARIABLE
CONFIGURATION
ZONE N P
R
U
L L L
M M M
F F F
VIEW W−W VIEW W−W VIEW W−W
1 2 3
**----- End of picture text -----**
**www.onsemi.com** **7** **NTST20120CTG, NTSJ20120CTG, NTSB20120CT−1G, NTSB20120CTG, NTSB20120CTT4G PACKAGE DIMENSIONS** **I[2] PAK (TO−262)** CASE 418D ISSUE D **==> picture [404 x 214] intentionally omitted <==** **----- Start of picture text -----**
C
E
−B− V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
4
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES MILLIMETERS
A DIM MIN MAX MIN MAX
W A 0.335 0.380 8.51 9.65
; 1 2 3 ee ==== B 0.380 0.406 9.65 10.31
C 0.160 0.185 4.06 4.70
D 0.026 0.035 0.66 0.89
F E 0.045 0.055 1.14 1.40
F 0.122 REF 3.10 REF
−T− G 0.100 BSC 2.54 BSC
SEATING H 0.094 0.110 2.39 2.79
PLANE K J 0.013 0.025 0.33 0.64
S K 0.500 0.562 12.70 14.27
S 0.390 REF 9.90 REF
V 0.045 0.070 1.14 1.78
W 0.522 0.551 13.25 14.00
G ; J STYLE 3:PIN 1. ANODE
D 3 PL H 2. CATHODE
3. ANODE
0.13 (0.005) M T B M 4. CATHODE
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