# Schottky Rectifier, 200 V, 40 A, Dual Common Cathode, TO-263 (D2PAK), 3 Pins, 1.45 V ![Product image](https://novapart.co/image/farnell:2452051/) **URL**: https://novapart.co/products/NTSB40200CTG/schottky-rectifier-200-v-40-a-dual-common-cathode **SKU**: NTSB40200CTG **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Schottky Rectifier Diodes **Price**: €0.5030 **Stock**: 10+ ## Description Repetitive Reverse Voltage Vrrm Max:200V; Forward Current If(AV):40A; Diode Configuration:Dual Common Cathode; Diode Case Style:TO-263; No. of Pins:3Pins; Forward Voltage VF Max:1.45V; Forward Surge Curren ## Specifications | Parameter | Value | |---|---| | Svhc | No SVHC (15-Jan-2018) | | No. Of Pins | 3Pins | | Product Range | NTSB4 | | Qualification | AEC-Q101 | | Diode Case Style | TO-263 (D2PAK) | | Diode Configuration | Dual Common Cathode | | Forward Voltage Max | 1.45V | | Forward Surge Current | 250A | | Average Forward Current | 40A | | Operating Temperature Max | 150°C | | Repetitive Peak Reverse Voltage | 200V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2452051/) ## NTSB40200CTG, NTSJ40200CTG ## Very Low Forward Voltage Trench-based Schottky Rectifier ## **Exceptionally Low VF = 0.53 V at IF = 5 A** ## **Features** - Fine Lithography Trench−based Schottky Technology for Very Low Forward Voltage and Low Leakage - Fast Switching with Exceptional Temperature Stability - Low Power Loss and Lower Operating Temperature ## **http://onsemi.com** **VERY LOW FORWARD VOLTAGE, LOW LEAKAGE SCHOTTKY BARRIER RECTIFIERS 40 AMPERES, 200 VOLTS** - Higher Efficiency for Achieving Regulatory Compliance - Low Thermal Resistance - High Surge Capability - These Devices are Pb−Free and Halogen Free/BFR Free ## **Typical Applications** - Switching Power Supplies including Telecom AC to DC Power Stages, LED Lighting and ATX - High Voltage DC−DC Converters - Freewheeling and OR−ing Diodes - Output Rectifier in Welding Power Supplies - Industrial Automation ## **Mechanical Characteristics** - Case: Epoxy, Molded **==> picture [154 x 174] intentionally omitted <==** **----- Start of picture text -----**
PIN CONNECTIONS
1
2, 4
3 to
4
TO−220FP D2PAK
1 Y 2 CASE 221AH CASE 418B
3
**----- End of picture text -----**
- Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in - Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable - Lead Temperature for Soldering Purposes: 260°C Maximum for 10 sec **ORDERING INFORMATION** See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. This document contains information on some products that are still under development. ON Semiconductor reserves the right to change or discontinue these products without notice. Publication Order Number: **NTSB40200CT/D** **1** © Semiconductor Components Industries, LLC, 2014 **July, 2014 − Rev. 1** **NTSB40200CTG, NTSJ40200CTG** ## **MAXIMUM RATINGS** |**MAXIMUM RATINGS**|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage|VRRM
VRWM
VR|200|V| |Average Rectified Forward Current
(Rated VR, TC= 125°C) NTSB40200CTG Per device
(Rated VR, TC= 130°C) NTSB40200CTG Per diode
(Rated VR, TC= 65°C) NTSJ40200CTG Per device
(Rated VR, TC= 42°C) NTSJ40200CTG Per diode|IF(AV)|40
20
20
20|A| |Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz, TC= 115°C) NTSB40200CTG Per device
(Rated VR, Square Wave, 20 kHz, TC= 125°C) NTSB40200CTG Per diode
(Rated VR, Square Wave, 20 kHz, TC= 40°C) NTSJ40200CTG Per device
(Rated VR, Square Wave, 20 kHz, TC= 25°C) NTSJ40200CTG Per diode|IFRM|80
40
40
40|A| |Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)|IFSM|250|A| |Operating Junction Temperature|TJ|−55 to +150|°C| |Storage Temperature|Tstg|−55 to +150|°C| |ESD Rating (Human Body Model)||3A|| |ESD Rating (Machine Model)||M4|| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**||||| |---|---|---|---|---| |**Rating**|**Symbol**|**NTSB40200CTG**|**NTSJ40200CTG**|**Unit**| |Typical Thermal Resistance
Junction−to−Case Per Diode
Junction−to−Case Per Device
Junction−to−Ambient Per Device|R�JC
R�JA|1.29
0.79
40|6.94
6.05
105|°C/W| ## **ELECTRICAL CHARACTERISTICS** |**ELECTRICAL CHARACTERISTICS**||||| |---|---|---|---|---| |**Rating**|**Symbol**|Typ|**Max**|**Unit**| |Instantaneous Forward Voltage (Note 1)
(IF= 5 A, TJ= 25°C)
(IF= 10 A, TJ= 25°C)
(IF= 15 A, TJ= 25°C)
(IF= 20 A, TJ= 25°C)
(IF= 5 A, TJ= 125°C)
(IF= 10 A, TJ= 125°C)
(IF= 15 A, TJ= 125°C)
(IF= 20 A, TJ= 125°C)|VF|0.68
0.74
0.79
0.84
0.53
0.60
0.64
0.68|−
−
−
1.45
−
−
−
0.80|V| |Instantaneous Reverse Current (Note 1)
(VR= 180 V, TJ= 25°C)
(Rated dc Voltage, TJ= 25°C)
(VR= 180 V, TJ= 125°C)
(Rated dc Voltage, TJ= 125°C)|IR|3
5
5.3
7|−
100
−
30|�A
�A
mA
mA| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 � s, Duty Cycle � 2.0% **http://onsemi.com** **2** **NTSB40200CTG, NTSJ40200CTG** ## **TYPICAL CHARACTERISTICS** **==> picture [493 x 594] intentionally omitted <==** **----- Start of picture text -----**
100 100
TA = 125 ° C
10 TA = 125 ° C 10 TA = 150 ° C
TA = 150 ° C
1 TA = 25 ° C 1 TA = 25 ° C
TA = −55 ° C TA = −55 ° C
0.1 0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.00 0.40 0.80 1.20 1.60 2.00 2.40
VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward Figure 2. Maximum Instantaneous Forward
Characteristics Characteristics
1.E−01
1.E−02 T A = 150 ° C TA = 150 ° C
1.E−02
1.E−03 TA = 125 ° C TA = 125 ° C
1.E−03
1.E−04
1.E−05 1.E−04
TA = 25 ° C TA = 25 ° C
1.E−06
1.E−05
1.E−07
1.E−08 TA = −55 ° C 1.E−06 TA = −55 ° C
1.E−09 1.E−07
0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140 160 180 200
VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics
10k
TJ = 25 ° C
1k
100
10
1 10 100
VR, REVERSE VOLTAGE (V)
CURRENT (A) CURRENT (A)
, INSTANTANEOUS FORWARD , INSTANTANEOUS FORWARD
iF iF
, INSTANTANEOUS REVERSE CURRENT (A) , INSTANTANEOUS REVERSE CURRENT (A)
IR IR
C, JUNCTION CAPACITANCE (pF)
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**Figure 5. Typical Junction Capacitance** **http://onsemi.com** **3** **NTSB40200CTG, NTSJ40200CTG** ## **TYPICAL CHARACTERISTICS** **==> picture [488 x 400] intentionally omitted <==** **----- Start of picture text -----**
40 80
R � JC = 1.29 ° C/W R � JC = 0.79 ° C/W
35 70
DC DC
30 60
25 Square Wave 50 Square Wave
20 40
15 30
10 20
5 10
0 0
0 20 40 60 80 100 120 140 0 20 40 60 80 100 120 140
TC, CASE TEMPERATURE ( ° C) TC, CASE TEMPERATURE ( ° C)
Figure 6. Current Derating per Diode Figure 7. Current Derating per Device
(NTSB40200CT) (NTSB40200CT)
40 80
R � JC = 6.94 ° C/W R � JC = 6.05 ° C/W
35 70
30 60
DC
25 50
20 40
Square Wave DC
15 30
10 20
Square Wave
5 10
0 0
0 20 40 60 80 100 120 140 0 20 40 60 80 100 120 140
TC, CASE TEMPERATURE ( ° C) TC, CASE TEMPERATURE ( ° C)
CURRENT (A) CURRENT (A)
, AVERAGE FORWARD , AVERAGE FORWARD
IF(AV) IF(AV)
CURRENT (A) CURRENT (A)
, AVERAGE FORWARD , AVERAGE FORWARD
IF(AV) IF(AV)
**----- End of picture text -----**
**Figure 8. Current Derating per Diode (NTSJ40200CTG)** **Figure 9. Current Derating per Device (NTSJ40200CTG)** **==> picture [248 x 177] intentionally omitted <==** **----- Start of picture text -----**
60
55 IPK/IAV = 10
50 IPK/IAV = 5
45 IPK/IAV = 20
40
Square Wave
35
30
dc
25
20
15
10
5 TJ = 150 ° C
0
0 5 10 15 20 25 30 35 40
IF(AV), AVERAGE FORWARD CURRENT (A)
, AVERAGE FORWARD
F(AV) POWER DISSIPATION (W)
P
**----- End of picture text -----**
**Figure 10. Forward Power Dissipation** **http://onsemi.com** **4** **NTSB40200CTG, NTSJ40200CTG** ## **TYPICAL CHARACTERISTICS** **==> picture [491 x 393] intentionally omitted <==** **----- Start of picture text -----**
100
50%
10 20% R � JA = 40 ° C/W
10%
5%
1 2%
1%
0.1
0.01
Single Pulse
Psi Tab−A
0.001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t, PULSE TIME (sec)
Figure 11. Typical Transient Thermal Response per Device (NTSB40200CTG)
10
50%
R � JC = 6.05 ° C/W
20%
1 10%
5%
2%
0.1 1%
0.01
Single Pulse
0.001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t, PULSE TIME (sec)
C/W)
°
RESISTANCE (
R(t), TYPICAL TRANSIENT THERMAL
C/W)
°
RESISTANCE (
R(t), TYPICAL TRANSIENT THERMAL
**----- End of picture text -----**
**Figure 12. Typical Transient Thermal Response per Device (NTSJ40200CTG)** **http://onsemi.com** **5** **NTSB40200CTG, NTSJ40200CTG** ## **ORDERING INFORMATION** |**ORDERING INFORMATION**||| |---|---|---| |**Device**|**Package**|**Shipping**| |NTSB40200CTG|D2PAK
(Pb−Free)|50 Units / Rail| |NTSB40200CTT4G|D2PAK
(Pb−Free)|800 / Tape & Reel| |NTSJ40200CTG
(In Development)|TO−220FP
(Halide−Free)|50 Units / Rail| ## **MARKING DIAGRAMS** |||||||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |||||||||||||||| ||AY||WW|||||||||||| |TS40200CG|||||||||AYWW|||||| |||AKA||||||TS40200CG||||||| |||||||||||AKA||||| |||||||||||||||| |||||||||||||||| |||||||||||||||| ||D2PAK|||||||TO−220FP||||||| ||A|||||= Assembly Location||||||||| ||Y|||||= Year||||||||| ||WW|||||= Work Week||||||||| ||AKA|||||= Polarity Designator||||||||| ||G|||||= Pb−Free Package||||||||| **http://onsemi.com** **6** **NTSB40200CTG, NTSJ40200CTG** ## **PACKAGE DIMENSIONS** **D[2] PAK 3** CASE 418B−04 ISSUE K **==> picture [228 x 169] intentionally omitted <==** **----- Start of picture text -----**
C
E
V
−B−
W
4
A
S
1 2 3
−T−
K
SEATING W
PLANE G J
H
D 3 PL
0.13 (0.005) M T B M
**----- End of picture text -----**
|NO
1.
2.
3.|TES:
DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION: INCH.
418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.|TES:
DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION: INCH.
418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.|TES:
DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION: INCH.
418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.|TES:
DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION: INCH.
418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.|TES:
DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION: INCH.
418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.| |---|---|---|---|---|---| ||**DIM**|**INCHES**||**MILLIMETERS**|| |||**MIN**|**MAX**|**MIN**|**MAX**| ||**A**|0.340|0.380|8.64|9.65| ||**B**|0.380|0.405|9.65|10.29| ||**C**|0.160|0.190|4.06|4.83| ||**D**|0.020|0.035|0.51|0.89| ||**E**|0.045|0.055|1.14|1.40| ||**F**|0.310|0.350|7.87|8.89| ||**G**
|0.100 BSC

||2.54 BSC

|| ||**H**|0.080|0.110|2.03|2.79| ||**J**|0.018|0.025|0.46|0.64| ||**K**|0.090|0.110|2.29|2.79| ||**L**|0.052|0.072|1.32|1.83| ||**M**|0.280|0.320|7.11|8.13| ||**N**
|0.197 REF
||5.00 REF
|| ||**P**|0.079 REF||2.00 REF|| ||**R**|0.039 REF||0.99 REF|| ||**S**|0.575|0.625|14.60|15.88| ||**V**|0.045|0.055|1.14|1.40| **==> picture [328 x 160] intentionally omitted <==** **----- Start of picture text -----**
VARIABLE
CONFIGURATION
ZONE N P
R
U
L L L
M M M
F F F
VIEW W−W VIEW W−W VIEW W−W
1 2 3
**----- End of picture text -----**
**http://onsemi.com 7** **NTSB40200CTG, NTSJ40200CTG** ## **PACKAGE DIMENSIONS** **TO−220 FULLPACK, 3−LEAD** CASE 221AH ISSUE D **==> picture [426 x 207] intentionally omitted <==** **----- Start of picture text -----**
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
A B SEATINGPLANE Y14.5M, 1994.
E 2. CONTROLLING DIMENSION: MILLIMETERS.
A 3. CONTOUR UNCONTROLLED IN THIS AREA.
E/2 P H1 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH
0.14 M B A M A1 AND GATE PROTRUSIONS. MOLD FLASH AND GATE
PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE TO BE MEASURED AT OUTERMOST
Q EXTREME OF THE PLASTIC BODY.
D 5. DIMENSION b2 DOES NOT INCLUDE DAMBAR
C PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION
1 2 3 NOTE 3 SHALL NOT EXCEED 2.00.
MILLIMETERS
DIM MIN MAX
L L1 A 4.30 4.70
A1 2.50 2.90
A2 2.50 2.70
b 0.54 0.84
3X b c b2 1.10 1.40
c 0.49 0.79
3X b2 0.25 M B A M C A2 D 14.70 15.30
E 9.70 10.30
e e 2.54 BSC
H1 6.70 7.10
L 12.70 14.73
L1 --- 2.10
P 3.00 3.40
ai E Q 2.80 3.20
**----- End of picture text -----**
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