# Schottky Rectifier, 120 V, 30 A, Dual Common Cathode, TO-263 (D2PAK), 3 Pins, 1.08 V
**URL**: https://novapart.co/products/NTSB30120CTT4G/schottky-rectifier-120-v-30-a-dual-common-cathode
**SKU**: NTSB30120CTT4G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Schottky Rectifier Diodes
**Price**: €0.7050
**Stock**: 10+
## Specifications
| Parameter | Value |
|---|---|
| Svhc | No SVHC (15-Jan-2018) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Diode Mounting | Surface Mount |
| Diode Case Style | TO-263 (D2PAK) |
| Diode Configuration | Dual Common Cathode |
| Forward Voltage Max | 1.08V |
| Forward Surge Current | 150A |
| Average Forward Current | 30A |
| Operating Temperature Max | 150°C |
| Repetitive Peak Reverse Voltage | 120V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:3606615/)
## NTST30120CT, NTSJ30120CTG, NTSB30120CT-1G, NTSB30120CTG, NTSB30120CTT4G
## Very Low Forward Voltage Trench-based Schottky Rectifier
## **Exceptionally Low VF = 0.50 V at IF = 5 A**
**www.onsemi.com**
**VERY LOW FORWARD VOLTAGE, LOW LEAKAGE SCHOTTKY BARRIER RECTIFIERS 30 AMPERES, 120 VOLTS**
## **Features**
- Fine Lithography Trench−based Schottky Technology for Very Low Forward Voltage and Low Leakage
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**----- Start of picture text -----**
PIN CONNECTIONS
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1 2, 4
- Fast Switching with Exceptional Temperature Stability
- Low Power Loss and Lower Operating Temperature
3
- Higher Efficiency for Achieving Regulatory Compliance
- Low Thermal Resistance
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**----- Start of picture text -----**
4
• High Surge Capability 4
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**----- Start of picture text -----**
4
4
)
TO−220AB I2PAK
1 CASE 221A “ 1 CASE 418D
2 3 STYLE 6 2 3 STYLE 3
**----- End of picture text -----**
- These are Pb−Free Devices
## **Typical Applications**
- Switching Power Supplies including Notebook / Netbook Adapters, ATX and Flat Panel Display
- High Frequency and DC−DC Converters
- Freewheeling and OR−ing diodes
- Reverse Battery Protection
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**----- Start of picture text -----**
• Instrumentation 4
Mechanical Characteristics
• Case: Epoxy, Molded
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in
• Finish: All External Surfaces Corrosion Resistant and Terminal
TO−220FP D2PAK
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes: 260°C Maximum for 1 q 2 CASE 221AH [2] CASE 418B
3
10 sec
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
**----- End of picture text -----**
Publication Order Number: **NTST30120CT/D**
**1**
© Semiconductor Components Industries, LLC, 2016 **July, 2016 − Rev. 6**
## **NTST30120CT, NTSJ30120CTG, NTSB30120CT−1G, NTSB30120CTG, NTSB30120CTT4G**
## **MAXIMUM RATINGS**
|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage|VRRM
VRWM
VR|120|V|
|Average Rectified Forward Current
(Rated VR, TC= 125°C)
Per device
Per diode|IF(AV)|30
15|A|
|Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz, TC= 130°C)
Per device
Per diode|IFRM|60
30|A|
|Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)|IFSM|150|A|
|Operating Junction Temperature|TJ|−40 to +150|°C|
|Storage Temperature|Tstg|−40 to +150|°C|
|Voltage Rate of Change (Rated VR)|dv/dt|10,000|V/�s|
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
## **THERMAL CHARACTERISTICS**
|**THERMAL CHARACTERISTICS**||||||
|---|---|---|---|---|---|
|**Rating**|**Symbol**|**NTST30120CTG**
**NTSB30120CT−1G**|**NTSB30120CTG**|**NTSJ30120CTG**|**Unit**|
|Maximum Thermal Resistance per Diode
Junction−to−Case
Junction−to−Ambient|R�JC
R�JA|2.5
70|1.14
46.6|4.05
105|°C/W
°C/W|
## **ELECTRICAL CHARACTERISTICS** (Per Leg unless otherwise noted)
|**ELECTRICAL CHARACTERISTICS**(Per Leg unless otherwise noted)|||||
|---|---|---|---|---|
|**Rating**|**Symbol**|**Typ**|**Max**|**Unit**|
|Maximum Instantaneous Forward Voltage (Note 1)
(IF= 5 A, TJ= 25°C)
(IF= 7.5 A, TJ= 25°C)
(IF= 15 A, TJ= 25°C)
(IF= 5 A, TJ= 125°C)
(IF= 7.5 A, TJ= 125°C)
(IF= 15 A, TJ= 125°C)|vF|0.56
0.71
0.90
0.50
0.60
0.68|−
−
1.08
−
−
0.76|V|
|Maximum Instantaneous Reverse Current (Note 1)
(VR= 90 V, TJ= 25°C)
(VR= 90 V, TJ= 125°C)
(Rated dc Voltage, TJ= 25°C)
(Rated dc Voltage, TJ= 125°C)|IR|16
11
−
25|−
−
800
100|�A
mA
�A
mA|
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 � s, Duty Cycle � 2.0%
**www.onsemi.com**
**2**
**NTST30120CT, NTSJ30120CTG, NTSB30120CT−1G, NTSB30120CTG, NTSB30120CTT4G TYPICAL CHARACTERISITICS**
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**----- Start of picture text -----**
100
TA = 150°C TA = 25°C
10 TA = 125°C
1.0
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward
Characteristics
10000
TJ = 25 ° C
1000
100
10
0.1 1 10 100
VR, REVERSE VOLTAGE (V)
iF, INSTANTANEOUS FORWARD CURRENT (A)
, JUNCTION CAPACITANCE (pF)
J
C
**----- End of picture text -----**
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**----- Start of picture text -----**
100
TA = 150 ° C
10
TA = 125 ° C
1.0
0.1
0.01 TA = 25 ° C
0.001
20 30 40 50 60 70 80 90 100 110 120
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
, INSTANTANEOUS REVERSE CURRENT (mA)
IR
**----- End of picture text -----**
**Figure 2. Typical Reverse Current Characteristics**
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**----- Start of picture text -----**
30
R � JC = 1.3 ° C/W
dc
25
20
15 SQUARE WAVE
10
5
0
0 20 40 60 80 100 120 140
TC, CASE TEMPERATURE ( ° C)
, AVERAGE FORWARD CURRENT (A)
IF(AV)
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**Figure 3. Typical Junction Capacitance**
**Figure 4. Current Derating per Leg**
**==> picture [491 x 172] intentionally omitted <==**
**----- Start of picture text -----**
60 30
55 R � JC = 1.3 ° C/W IPK/IAV = 20
50 dc 25
45 IPK/IAV = 10 IPK/IAV = 5
40 20
SQUARE
35 WAVE
30 SQUARE WAVE 15
25
dc
20 10
15
10 5
5 TJ = 150 ° C
0 0
0 20 40 60 80 100 120 140 0 2 4 6 8 10 12 14 16 18 20
TC, CASE TEMPERATURE ( ° C) IF(AV), AVERAGE FORWARD CURRENT (A)
ER DISSIPATION (W)
, AVERAGE FORWARD POW-
F(AV)
P
, AVERAGE FORWARD CURRENT (A)
IF(AV)
**----- End of picture text -----**
**Figure 5. Current Derating**
**Figure 6. Forward Power Dissipation**
**www.onsemi.com**
**3**
## **NTST30120CT, NTSJ30120CTG, NTSB30120CT−1G, NTSB30120CTG, NTSB30120CTT4G TYPICAL CHARACTERISITICS**
**==> picture [495 x 620] intentionally omitted <==**
**----- Start of picture text -----**
10
rT dE TTTTTTT
a
1
50% Duty Cycle
Soooee enee cee e ee enetteeeeiaee l|
aii ilene
20%
PCE |
RS 10% iii eeeeee -* eT EAL |TTT
0.1
ce 5% rwt [|] LI Ll
prt 2% tt ly mal
1% Single Pulse
0.01 Se— [De erC E L M OR ETHIE ETT TTT DUTY CYCLE, D = ty/ts | iil|
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t, Pulse Time (sec)
Figure 7. Typical Transient Thermal Response for NTST30120CT and NTSB30120CT−1G
10
50% Duty Cycle
FSR Rr tH
20%
1 EIN SE EEE EEE A SE een |
ae 10% I | crore ILIE
SS SSSSe eet
ee 5% ee ttt LCL
2%
0.1 =f
mn es Ss
1%
ee
Re
0.01 Peer ETI TTIFEITTTT
Single Pulse
ee
LT [TTT] TTTTTOe QO OO GO
0.001 LL LETHE TE LEME EET EET EE EET ETE EETT
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t, Pulse Time (sec)
Figure 8. Typical Transient Thermal Response for NTSJ30120CTG
1 aOe0 2 |
eVVV Va
nnee ee ee el
eena ee ee ee el
50% Duty Cycle
pesmi [nT] |
See ll AZGA ae
0.1 le 20%
et rg EE EE EE EEE Hl
|__te 10% sarPee eaveOe,eam tTmi eeeCT P {- ] (|lI
Pe 5% HTT TTT (ae) | | | | [|
| SAA be |
2%
eee CIM TIE CTT FC CTT “Ee |
1% Single Pulse
0.01 CA ANNE LIN LERNER EEE EPIL oumeveit =e |
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t, Pulse Time (sec)
C/W)
°
RESISTANCE (
R(t), TYPICAL TRANSIENT THERMAL
C/W)
°
RESISTANCE (
R(t), TYPICAL TRANSIENT THERMAL
C/W)
°
RESISTANCE (
R(t), TYPICAL TRANSIENT THERMAL
**----- End of picture text -----**
**Figure 9. Typical Transient Thermal Response for NTSB30120CTG**
**www.onsemi.com**
**4**
## **NTST30120CT, NTSJ30120CTG, NTSB30120CT−1G, NTSB30120CTG, NTSB30120CTT4G**
## **ORDERING INFORMATION**
|**ORDERING INFORMATION**|||
|---|---|---|
|**Device**|**Package**|**Shipping**†|
|NTST30120CTG|TO−220AB
(Pb−Free)|50 Units / Rail|
|NTSJ30120CTG|TO−220FP
(Halide−Free)|50 Units / Rail|
|NTSB30120CT−1G|I2PAK
(Pb−Free)|50 Units / Rail|
|NTSB30120CTG|D2PAK
(Pb−Free)|50 Units / Rail|
|NTSB30120CTT4G|D2PAK
(Pb−Free)|800 / Tape & Reel|
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
## **MARKING DIAGRAMS**
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**----- Start of picture text -----**
AYWW
AYWW AYWW AYWW TS30120CG
TS30120Cx TS30120CG TS30120CG AKA
AKA
AKA AKA
TO−220AB TO−220FP I [2] PAK D [2] PAK
**----- End of picture text -----**
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**----- Start of picture text -----**
A = Assembly Location
Y = Year
WW = Work Week
AKA = Polarity Designator
x = G or H
G = Pb−Free Package
H = Halide−Free Package
**----- End of picture text -----**
**www.onsemi.com**
**5**
MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS**
**TO−220 FULLPACK, 3−LEAD** CASE 221AH ISSUE F
DATE 30 SEP 2014
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**----- Start of picture text -----**
A B SEATINGPLANE NOTES:1. DIMENSIONING AND TOLERANCING PER ASME
E Y14.5M, 1994.
E/2 P A 2. CONTROLLING DIMENSION: MILLIMETERS.
0.14 M B A M H1 A1 3.4. CONTOUR UNCONTROLLED IN THIS AREA.DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH AND GATE
SCALE 1:1 PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO
EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE MEA
Q SURED AT OUTERMOST EXTREME OF THE PLASTIC BODY.
D C 5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION.
LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.00.
1 2 3 NOTE 3 6. CONTOURS AND FEATURES OF THE MOLDED PACKAGE BODY
MAY VARY WITHIN THE ENVELOP DEFINED BY DIMENSIONS A1
AND H1 FOR MANUFACTURING PURPOSES.
L L1 MILLIMETERS
DIM MIN MAX
A 4.30 4.70
A1 2.50 2.90
3X b c A2 2.50 2.90
3X b2 0.25 M B A M C A2 b2b 0.541.10 0.841.40
c 0.49 0.79
e SIDE VIEW D 14.70 15.30
FRONT VIEW E 9.70 10.30
e 2.54 BSC
H1 6.60 7.10
L 12.50 14.73
L1 --- 2.80
P 3.00 3.40
SECTION D−D Q 2.80 3.20
A GENERIC
NOTE 6 MARKING DIAGRAM*
NOTE 6
H1
D D
XX
XXXXXXXXX
AWLYWWG
A SECTION A−A
ALTERNATE CONSTRUCTION
**----- End of picture text -----**
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**----- Start of picture text -----**
XX
XXXXXXXXX
AWLYWWG
1
A = Assembly Location
WL = Wafer Lot
Y = Year
WW = Work Week
G = Pb−Free Package
**----- End of picture text -----**
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**----- Start of picture text -----**
STYLE 1: STYLE 2:
PIN 1. MAIN TERMINAL 1 PIN 1. CATHODE
2. MAIN TERMINAL 2 2. ANODE
3. GATE 3. GATE
**----- End of picture text -----**
- *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ � ”, may or may not be present.
**==> picture [493 x 37] intentionally omitted <==**
**----- Start of picture text -----**
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98AON52577E Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DESCRIPTION: TO−220 FULLPACK, 3−LEAD PAGE 1 OF 1
**----- End of picture text -----**
**onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others.
www.onsemi.com
© Semiconductor Components Industries, LLC, 2010
MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS**
**D[2] PAK 3** CASE 418B−04 ISSUE L
**==> picture [56 x 45] intentionally omitted <==**
DATE 17 FEB 2015
**SCALE 1:1**
**==> picture [441 x 418] intentionally omitted <==**
**----- Start of picture text -----**
NOTES:
C 1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
E 2. CONTROLLING DIMENSION: INCH.
−B− V 3. 418B−01 THRU 418B−03 OBSOLETE,NEW STANDARD 418B−04.
W
4 INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.340 0.380 8.64 9.65
B 0.380 0.405 9.65 10.29
A C 0.160 0.190 4.06 4.83
S D 0.020 0.035 0.51 0.89
1 2 3 E 0.045 0.055 1.14 1.40
F 0.310 0.350 7.87 8.89
G 0.100 BSC 2.54 BSC
−T− H 0.080 0.110 2.03 2.79
K J 0.018 0.025 0.46 0.64
SEATINGPLANE G J W KL 0.0900.052 0.0720.110 2.291.32 2.791.83
M 0.280 0.320 7.11 8.13
H N 0.197 REF 5.00 REF
D 3 PL P 0.079 REF 2.00 REF
R 0.039 REF 0.99 REF
0.13 (0.005) M T B M S 0.575 0.625 14.60 15.88
V 0.045 0.055 1.14 1.40
VARIABLE
CONFIGURATION
ZONE N P
R
U
L L L
M M M
F F F
VIEW W−W VIEW W−W VIEW W−W
1 2 3
STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5: STYLE 6:
PIN 1. BASE PIN 1. GATE PIN 1. ANODE PIN 1. GATE PIN 1. CATHODE PIN 1. NO CONNECT
2. COLLECTOR 2. DRAIN 2. CATHODE 2. COLLECTOR 2. ANODE 2. CATHODE
3. EMITTER 3. SOURCE 3. ANODE 3. EMITTER 3. CATHODE 3. ANODE
4. COLLECTOR 4. DRAIN 4. CATHODE 4. COLLECTOR 4. ANODE 4. CATHODE
**----- End of picture text -----**
## **MARKING INFORMATION AND FOOTPRINT ON PAGE 2**
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**----- Start of picture text -----**
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98ASB42761B Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DESCRIPTION: D [2] PAK 3 PAGE 1 OF 2
**----- End of picture text -----**
**onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others.
www.onsemi.com
© Semiconductor Components Industries, LLC, 2019
DATE 17 FEB 2015
**==> picture [64 x 30] intentionally omitted <==**
**----- Start of picture text -----**
D [2] PAK 3
CASE 418B−04
ISSUE L
**----- End of picture text -----**
**==> picture [182 x 193] intentionally omitted <==**
**----- Start of picture text -----**
GENERIC
MARKING DIAGRAM*
xx AYWW
xxxxxxxxG
xxxxxxxxx xxxxxxxxG
AYWW
AWLYWWG AKA
IC Standard Rectifier
xx = Specific Device Code
A = Assembly Location
WL = Wafer Lot
Y = Year
WW = Work Week
G = Pb−Free Package
AKA = Polarity Indicator
**----- End of picture text -----**
*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ � ”, may or may not be present. Some products may not follow the Generic Marking.
## **SOLDERING FOOTPRINT***
**==> picture [147 x 173] intentionally omitted <==**
**----- Start of picture text -----**
10.49
8.38
16.155
2X
3.504
2X
1.016
5.080
PITCH
DIMENSIONS: MILLIMETERS
**----- End of picture text -----**
*For additional information on our Pb−Free strategy and soldering details, please download the **onsemi** Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB42761B** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DESCRIPTION: D[2] PAK 3 PAGE 2 OF 2**
**onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others.
**www.onsemi.com**
~~**2**~~
www.onsemi.com
© Semiconductor Components Industries, LLC, 2019
**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
## **ADDITIONAL INFORMATION**
**TECHNICAL PUBLICATIONS** : **ONLINE SUPPORT** : www.onsemi.com/support **Technical Library:** www.onsemi.com/design/resources/technical−documentation **For additional information, please contact your local Sales Representative at onsemi Website:** www.onsemi.com www.onsemi.com/support/sales
**==> picture [232 x 43] intentionally omitted <==**
## Links
- [View this product on Novapart](https://novapart.co/products/NTSB30120CTT4G/schottky-rectifier-120-v-30-a-dual-common-cathode)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/on-semiconductor/ntsb30120ctt4g/schottky-rectifier-120v-30a-to/dp/3606615)
---
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