# Power MOSFET, P Channel, 20 V, 2.4 A, 0.07 ohm, SOT-23, Surface Mount ![Product image](https://novapart.co/image/farnell:2728037/) **URL**: https://novapart.co/products/NTRV4101PT1G/power-mosfet-p-channel-20-v-24-a-007-ohm-sot-23 **SKU**: NTRV4101PT1G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.5270 **Stock**: 10+ ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 3Pins | | Channel Type | P Channel | | Qualification | AEC-Q101 | | Power Dissipation | 1.25W | | Transistor Mounting | Surface Mount | | Transistor Polarity | P Channel | | Power Dissipation Pd | 1.25W | | Rds(On) Test Voltage | 4.5V | | On Resistance Rds(On) | 0.07ohm | | Transistor Case Style | SOT-23 | | Drain Source Voltage Vds | 20V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 2.4A | | Drain Source On State Resistance | 0.07ohm | | Automotive Qualification Standard | AEC-Q101 | | Gate Source Threshold Voltage Max | 720mV | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2728037/) NTR4101P, NTRV4101P ## Trench Power MOSFET **−20 V, Single P−Channel, SOT−23** ## **Features** - Leading −20 V Trench for Low RDS(on) - −1.8 V Rated for Low Voltage Gate Drive - SOT−23 Surface Mount for Small Footprint - NTRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant |~~es~~||| |---|---|---| |**V(BR)DSS**
~~es~~|**RDS(ON) TYP**|**ID MAX**| |−20 V
~~es~~|70 m @ −4.5 V
90 m @ −2.5 V
112 m @ −1.8 V|−3.2 A| ## **Applications** - Load/Power Management for Portables ## **P−Channel MOSFET** - Load/Power Management for Computing **==> picture [6 x 7] intentionally omitted <==** **----- Start of picture text -----**
S
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- Charging Circuits and Battery Protection Charging Circuits and Battery Protection **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) G **Parameter Symbol Value Unit** Drain−to−Source Voltage VDSS −20 V Gate−to−Source Voltage VGS ± 8.0 V ~~oo —o~~ Continuous Drain Steady TA = 25 ° C ID −2.4 A D Current (Note 1) State TA = 85 ° C −1.7 **MARKING DIAGRAM &** t ≤ 10 s TA = 25 ° C −3.2 **PIN ASSIGNMENT** Power Dissipation Steady TA = 25 ° C PD 0.73 W (Note 1) State 3 3 Drain t ≤ 10 s 1.25 Continuous Drain Steady TA = 25 ° C ID −1.8 A 1 TR4 M Current (Note 2) State TA = 85 ° C −1.3 2 Power Dissipation TA = 25 ° C PD 0.42 W **SOT−23** (Note 2) **CASE 318** 1 2 ~~se~~ 2 ~~4~~ Pulsed Drain Current tp = 10 s IDM −18 A **STYLE 21** Gate Source ~~tf~~ ESD Capability (Note 3) C = 100 pF, ESD 225 V TR4 = Device Code RS = 1500 ~~po~~ M = Date Code Operating Junction and Storage Temperature ~~|~~ TJ, −55 to ° C = Pb−Free Package TSTG 150 (Note: Microdot may be in either location) Source Current (Body Diode) IS −2.4 A ~~a~~ Single Pulse Drain−to−Source Avalanche EAS 16 mJ **ORDERING INFORMATION** Energy (VGS = −8 V, IL = −1.8 Apk, L = 10 mH, RG = 25 ) Lead Temperature for Soldering TL 260 ° C **Device Package Shipping**[[†]] Purposes (1/8” from case for 10 s) NTR4101PT1G SOT−23 3000 / Tape & NTRV4101PT1G (Pb−Free) Reel Stresses exceeding those listed in the Maximum Ratings table may damage the ~~SE =~~ device. If any of these limits are exceeded, device functionality should not be †For information on tape and reel specifications, assumed, damage may occur and reliability may be affected. **==> picture [99 x 19] intentionally omitted <==** **----- Start of picture text -----**
MARKING DIAGRAM &
PIN ASSIGNMENT
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**ORDERING INFORMATION Device Package Shipping**[[†]] NTR4101PT1G SOT−23 3000 / Tape & NTRV4101PT1G (Pb−Free) Reel ~~=~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: **NTR4101P/D** **1** © Semiconductor Components Industries, LLC, 2014 **October, 2016 − Rev. 12** **NTR4101P, NTRV4101P** ## **THERMAL RESISTANCE RATINGS** |**THERMAL RESISTANCE RATINGS**|||| |---|---|---|---| |**Parameter**|**Symbol**|**Max**|**Unit**| |Junction−to−Ambient − Steady State (Note 1)|R�JA|170|°C/W| |Junction−to−Ambient − t < 10 s (Note 1)|R�JA|100|| |Junction−to−Ambient − Steady State (Note 2)|R�JA|300|| 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) 2. Surface−mounted on FR4 board using the minimum recommended pad size. 3. ESD Rating Information: HBM Class 0 ## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)|||||| |---|---|---|---|---|---|---| |**Characteristic**||**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**||||||| |Drain−to−Source Breakdown Voltage (Note 4)
(VGS= 0 V, ID= −250�A)||V(BR)DSS|−20|||V| |Zero Gate Voltage Drain Current (Note 4)
(VGS= 0 V, VDS= −16 V)||IDSS|||−1.0|�A| |Gate−to−Source Leakage Current
(VGS=±8.0 V, VDS= 0 V)||IGSS|||±100|nA| |**ON CHARACTERISTICS**||||||| |Gate Threshold Voltage (Note 4)
(VGS= VDS, ID= −250�A)||VGS(th)|−0.4|−0.72|−1.2|V| |Drain−to−Source On−Resistance
(VGS= −4.5 V, ID= −1.6 A)
(VGS= −2.5 V, ID= −1.3 A)
(VGS= −1.8 V, ID= −0.9 A)||RDS(on)||70
90
112|85
120
210|m�| |Forward Transconductance (VDS= −5.0 V, ID= −2.3 A)||gFS||7.5||S| |**CHARGES, CAPACITANCES & GATE RESISTANCE**||||||| |Input Capacitance|(VGS= 0 V, f = 1 MHz, VDS= −10 V)|Ciss||675||pF| |Output Capacitance||Coss||100||| |Reverse Transfer Capacitance||Crss||75||| |Total Gate Charge|(VGS= −4.5 V, VDS= −10 V, ID= −1.6 A)|QG(tot)||7.5|8.5|nC| |Gate−to−Source Gate Charge|(VDS= −10 V, ID= −1.6 A)|QGS||1.2||nC| |Gate−to−Drain “Miller” Charge|(VDS= −10 V, ID= −1.6 A)|QGD||2.2||nC| |Gate Resistance||RG||6.5||�| |**SWITCHING CHARACTERISTICS**(Note 5)||||||| |Turn−On Delay Time|(VGS= −4.5 V, VDS= −10 V,
ID= −1.6 A, RG= 6.0�)|td(on)||7.5||ns| |Rise Time||tr||12.6||| |Turn−Off Delay Time||td(off)||30.2||| |Fall Time||tf||21.0||| |**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||| |Forward Diode Voltage|(VGS= 0 V, IS= −2.4 A)|VSD||−0.82|−1.2|V| |Reverse Recovery Time|(VGS= 0 V,
dISD/dt = 100 A/�s, IS= −1.6 A)|trr||12.8|15|ns| |Charge Time||ta||9.9||ns| |Discharge Time||tb||3.0||ns| |Reverse Recovery Charge||Qrr||1008||nC| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: Pulse Width ≤ 300 � s, Duty Cycle ≤ 2%. 5. Switching characteristics are independent of operating junction temperature. **www.onsemi.com** **2** **NTR4101P, NTRV4101P** ## **TYPICAL PERFORMANCE CURVES** (TJ = 25 ° C unless otherwise noted) **==> picture [492 x 383] intentionally omitted <==** **----- Start of picture text -----**
10 VGS = −10 V − −2.4 V TJ = 25 ° C 10 TJ = −55 ° C
9 25 ° C
−2.2 V
8 8 125 ° C
7
6 −2.0 V 6
5
4 −1.8 V 4
. 3
−1.6 V
2 2
1 VDS ≥ 20 V
0 0
0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
0.1 0.15
0.09 VGS = −5.0 V T = 125 ° C 0.14 TJ = 25 ° C
0.13
0.08 0.12
0.07 T = 25 ° C 0.11 VGS = −2.5 V
0.10
0.06 0.09
T = −55 ° C 0.08
0.05 0.07 VGS = −4.5 V
0.04 0.06
0.05
0.03
0.04
0.02 0.03
0.02
0.01
0.01
0 0
1 3 5 7 9 1 2 3 4 5 6 7 8 9 10
−ID, DRAIN CURRENT (AMPS) −ID, DRAIN CURRENT (AMPS)
DRAIN CURRENT (AMPS) DRAIN CURRENT (AMPS)
D, D,
−I −I
) � ) �
DRAIN−TO−SOURCE RESISTANCE ( DRAIN−TO−SOURCE RESISTANCE (
DS(on), DS(on),
R R
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**Figure 3. On−Resistance vs. Drain Current and Temperature** **Figure 4. On−Resistance vs. Drain Current and Temperature** **==> picture [492 x 177] intentionally omitted <==** **----- Start of picture text -----**
100000
1.4 ID = −1.6 A VGS = 0 V
10000 TJ = 150 ° C
1.2
1000
1.0 TJ = 125 ° C
100
0.8
0.6 10
0.4 1.0
−50 −25 0 25 50 75 100 125 150 0 2 4 6 8 10 12 14 16
TJ, JUNCTION TEMPERATURE ( ° C) −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, LEAKAGE (nA)
DRAIN−TO−SOURCE
DSS
−I
DS(on),
R RESISTANCE (NORMALIZED)
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**Figure 5. On−Resistance Variation with Temperature** **Figure 6. Drain−to−Source Leakage Current vs. Voltage** **www.onsemi.com** **3** **NTR4101P, NTRV4101P** ## **TYPICAL PERFORMANCE CURVES** (TJ = 25 ° C unless otherwise noted) **==> picture [490 x 397] intentionally omitted <==** **----- Start of picture text -----**
1000 4.0
VGS = 0 V TJ = 25 ° C QT
3.5
800
Ciss 3.0
2.5
600 VDS VGS
2.0 Q gs Qgd
400 1.5
1.0
200 Coss
0.5 ID = −1.6 A
0 Crss 0 TJ = 25 ° C
0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source
Voltage vs. Total Gate Charge
1000 5
VIDDD = −1.6 A = −10 V 4.5 VTJGS = 25 = 0 V ° C
VGS = −4.5 V 4
3.5
100
3
2.5
td(off) 2
10 tf
tr 1.5
td(on) 1
0.5
1 0
1 10 100 0 0.2 0.4 0.6 0.8 1.0
RG, GATE RESISTANCE (OHMS) −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
−V
DS,
C, CAPACITANCE (pF)
GATE−TO−SOURCE VOLTAGE (VOLTS)
GS,
−V DRAIN−TO−SOURCE VOLTAGE (VOLTS)
t, TIME (ns)
, SOURCE CURRENT (A)
S
−I
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**Figure 9. Resistive Switching Time Variation vs. Gate Resistance** **Figure 10. Diode Forward Voltage vs. Current** **==> picture [250 x 174] intentionally omitted <==** **----- Start of picture text -----**
100
VGS ≤ 10 V
Single Pulse
10 TC = 25 ° C 10 � s
100 � s
1 ms
1
10 ms
0.1 dc
RDS(on) Limit
Thermal Limit
Package Limit
0.01
0.01 0.1 1 10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
, DRAIN CURRENT (A)
ID
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**Figure 11. Maximum Rated Forward Biased Safe Operating Area** **www.onsemi.com** **4** **NTR4101P, NTRV4101P** ## **PACKAGE DIMENSIONS** **SOT−23 (TO−236)** CASE 318−08 ISSUE AR **==> picture [467 x 327] intentionally omitted <==** **----- Start of picture text -----**
|||||||||||| |---|---|---|---|---|---|---|---|---|---|---| |D|NOTES:| |1.|DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.| |2.|CONTROLLING DIMENSION: MILLIMETERS.| |3.|MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.| |0.25|MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF| |a|E|a|3|HE|T|=|4.THE BASE MATERIAL.PROTRUSIONS, OR GATE BURRS.DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,| |1|2| |MILLIMETERS|INCHES| |DIM|MIN|NOM|MAX|MIN|NOM|MAX| |L|A|0.89|1.00|1.11|0.035|0.039|0.044| |3X|b|L1|A1b|0.010.37|0.060.44|0.100.50|0.0000.015|0.0020.017|0.0040.020| |e|VIEW C|c|0.08|0.14|0.20|0.003|0.006|0.008| |TOP VIEW|D|2.80|2.90|3.04|0.110|0.114|0.120| |E|1.20|1.30|1.40|0.047|0.051|0.055| |e|1.78|1.90|2.04|0.070|0.075|0.080| |L|0.30|0.43|0.55|0.012|0.017|0.022| |A|L1|0.35|0.54|0.69|0.014|0.021|0.027| |H|E|2.10|2.40|2.64|0.083|0.094|0.104| |T|0|°|−−−|10|°|0|°|−−−|10|°| |Se|A1|SIDE VIEW|SEE VIEW C|GRY|c|STYLE 12:| |END VIEW|PIN 1.|CATHODE| |2.|CATHODE| |3.|ANODE| |RECOMMENDED| |SOLDERING FOOTPRINT| |3X| |2.90|r|a|0.90| |L|O)|ct| |3X|0.80|1|LL|0.95| |PITCH| |DIMENSIONS: MILLIMETERS| **----- End of picture text -----**
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