# Power MOSFET, N Channel, 60 V, 2.2 A, 0.107 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:2399121/)

**URL**: https://novapart.co/products/NTR5198NLT1G/power-mosfet-n-channel-60-v-22-a-0107-ohm-sot-23
**SKU**: NTR5198NLT1G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.0610
**Stock**: 1000+
**Lead Time**: 162 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:2.2A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.107ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.5W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 2.2A |
| Drain Source On State Resistance | 0.107ohm |
| Gate Source Threshold Voltage Max | 2.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2399121/)

NTR5198NL 

## Power MOSFET 

## **60 V, 155 m** Q **Single N−Channel Logic Level, SOT−23** 

## **Features** 

- Small Footprint Industry Standard Surface Mount SOT−23 Package 

**www.onsemi.com V(BR)DSS RDS(on) TYP ID MAX** 155 m @ 10 V 60 V 2.2 A 205 m @ 4.5 V ~~Poe~~ 

- Low RDS(on) for Low Conduction Losses and Improved Efficiency 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

||||~~ee~~|||
|---|---|---|---|---|---|
|**Parameter**<br>~~ee~~|||**Symbol**<br>~~ee~~<br>~~ee~~<br>~~ee~~|**Value**<br>~~ee~~|**Unit**<br>~~ee~~|
|Drain−to−Source Voltage<br>~~ee~~<br>~~—~~|||VDSS<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|60<br>~~ee~~<br>~~ee~~<br>|V<br>~~ee~~<br>~~ee~~<br>|
|Gate−to−Source Voltage<br>~~ee~~<br>~~—~~|||VGS<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|±20<br>~~ee~~<br>~~ee~~<br>|V<br>~~ee~~<br>~~ee~~<br>|
|Continuous Drain<br>Current R<br>J−mb<br>(Notes 1, 2, 3, and 4)<br>~~|~~|Steady<br>State<br>~~| ~~<br><br>~~=)~~|TA= 25°C<br>~~—~~<br>~~a~~<br>|ID<br>~~ee ~~<br> ~~Fe~~<br>|2.2<br>~~ee~~<br>~~Fe~~<br>~~eee~~<br>|A<br>~~ee~~<br>~~Fe~~<br>|
|||TA= 100°C<br>~~— ~~<br>~~a~~<br>||1.6<br> ~~ee~~<br>~~Fe~~<br>~~eee~~<br>||
|Power Dissipation<br>R<br>J−mb<br>(Notes 1 and 3)<br>~~|~~<br>~~ee~~<br>~~=)~~||TA= 25°C<br>~~FH~~<br>~~**e**e~~<br>|PD<br>~~FH~~<br>e**e**<br><br>|1.5<br>~~eee~~<br>~~FH~~<br>~~eee~~<br>|W<br>~~FH~~<br>~~eee~~|
|||TA= 100°C<br> ~~FH~~<br>~~**e**e~~<br>~~a~~<br>||0.6<br>~~eee~~<br>~~FH~~<br>~~eee~~<br>~~ee~~<br>|~~FH~~<br>~~eee~~<br>|
|Continuous Drain<br>Current R JA<br>(Note 1, 2, 3, and 4)<br>~~ee ~~<br>~~=)~~|Steady<br>State<br> <br>~~=) ~~<br>~~ee~~|TA= 25°C<br>~~**e**e~~<br>~~a~~<br>~~FER~~|ID<br> e**e**<br><br>~~FER~~|1.7<br>~~eee~~<br>~~ee~~<br>~~FER~~|A<br>~~eee~~<br>~~FER~~|
|||TA= 100°C<br>~~**e**e ~~<br> ~~a~~<br>~~FER~~||1.2<br>~~eee~~<br>~~ee~~<br>~~FER~~||
|Power Dissipation R JA<br>(Notes 1 and 3)<br> <br>~~=)~~<br>~~a~~||TA= 25°C<br> ~~a~~<br>~~FER~~<br>~~—T~~|PD<br><br>~~FER~~<br>|0.9<br>~~ee~~<br>~~FER~~<br>~~Fr~~|W<br>~~FER~~<br>~~Fr~~|
|||TA= 100°C<br> ~~a~~<br> ~~FER~~<br>~~—T~~<br>~~ee~~||0.4<br>~~ee~~<br>~~FER~~<br>~~Fr~~|~~FER~~<br>~~Fr~~|
|Pulsed Drain Current<br> <br>~~=)~~<br>~~a~~|TA= 25°C,<br>tp= 10 s<br> ~~a ~~<br>~~=) ~~<br>~~—T ~~<br>~~ee~~||IDM<br> <br><br>|27<br> ~~ee~~<br><br> ~~Fr~~|A<br><br>~~Fr ~~|
|Operating Junction and Storage Temperature<br>~~ee~~<br>~~ee~~<br>~~ee~~|||TJ,<br>Tstg<br>~~ee~~<br>~~ee~~<br>|−55 to<br>150<br>~~ee~~<br>~~ee~~<br>|°C<br>~~ee~~<br>|
|Source Current (Body Diode)<br>~~es~~<br>~~ee~~|||IS<br>~~es~~<br>~~ee~~<br>|1.9<br>~~es~~<br>~~ee~~<br>|A<br>~~es~~<br>|
|Lead Temperature for Soldering Purposes<br>(1/8” from case for 10 s)<br>~~ee ~~|||TL<br>~~ee~~<br> ~~ee~~|260<br>~~ee~~<br>~~ee~~|°C<br>~~ee~~|



**==> picture [69 x 108] intentionally omitted <==**

**----- Start of picture text -----**<br>
N−Channel<br>D<br>G<br>S<br>**----- End of picture text -----**<br>


**==> picture [162 x 139] intentionally omitted <==**

**----- Start of picture text -----**<br>
3 MARKING DIAGRAM/<br>PIN ASSIGNMENT<br>1 Drain<br>3<br>2<br>&<br>AA6 M<br>SOT−23<br>CASE 318<br>1 2<br>STYLE 21<br>Gate Source<br>AA6 = Device Code<br>M = Date Code*<br>= Pb−Free Package<br>**----- End of picture text -----**<br>


(Note: Microdot may be in either location) 

1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 

*Date Code orientation may vary depending upon manufacturing location. 

2. Psi ( ) is used as required per JESD51−12 for packages in which substantially less than 100% of the heat flows to single case surface. 

3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 

4. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. 

## **ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|NTR5198NLT1G|SOT−23<br>(Pb−Free)|3000 /<br>Tape & Reel|
|NTR5198NLT3G|SOT−23<br>(Pb−Free)|10000 /<br>Tape & Reel|



- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

Publication Order Number: **NTR5198NL/D** 

**1** 

© Semiconductor Components Industries, LLC, 2013 **October, 2016 − Rev. 2** 

**NTR5198NL** 

## **THERMAL RESISTANCE RATINGS** 

|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**||||||
|---|---|---|---|---|---|---|---|---|
|**Parameter**||||**Symbol**||**Max**||**Unit**|
|Junction−to−Lead #3 − Drain (Notes 2 and 3)||||R�J−mb||86||°C/W|
|Junction−to−Ambient − Steady State (Note 3)||||R�JA||139||°C/W|
|**ELECTRICAL CHARACTERISTICS **(TJ= 25°C unless otherwise noted)|||||||||
|**Parameter**|**Symbol**|**Test Conditions**|||**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**|||||||||
|Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID= 250�A|||60|||V|
|Drain−to−Source Breakdown Voltage<br>Temperature Coefficient|V(BR)DSS/TJ|Reference to 25°C, ID= 250�A||||70||mV/°C|
|Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,<br>VDS= 60 V|TJ= 25°C||||1.0|�A|
||||TJ= 125°C||||10||
|Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS=�20 V|||||�100|nA|
|**ON CHARACTERISTICS**(Note 5)|||||||||
|Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= 250�A|||1.5||2.5|V|
|Threshold Temperature Coefficient|VGS(TH)/TJ|Reference to 25°C, ID= 250�A||||−6.5||mV/°C|
|Drain−to−Source On−Resistance|RDS(on)|VGS= 10 V, ID= 1 A||||107|155|m�|
|||VGS= 4.5 V, ID= 1 A||||142|205||
|Forward Transconductance|gFS|VDS= 5.0 V, ID= 1 A||||3||S|
|**CHARGES, CAPACITANCES & GATE RESISTANCE**|||||||||
|Input Capacitance|Ciss|VGS= 0 V, f = 1.0 MHz,<br>VDS= 25 V||||182||pF|
|Output Capacitance|Coss|||||25|||
|Reverse Transfer Capacitance|Crss|||||16|||
|Total Gate Charge|QG(TOT)|VDS= 48 V,<br>ID= 1 A|VGS= 4.5 V|||2.8||nC|
||||VGS= 10 V|||5.1|||
|Threshold Gate Charge|QG(TH)|VDS= 48<br>VGS=|V, ID= 1 A<br>10 V|||0.3|||
|Gate−to−Source Charge|QGS|||||0.8|||
|Gate−to−Drain Charge|QGD|||||1.5|||
|Plateau Voltage|VGP|||||3.1||V|
|Gate Resistance|RG|||||8||�|
|**SWITCHING CHARACTERISTICS**(Note 6)|||||||||
|Turn−On Delay Time|td(on)|VDS= 30 V, VGS= 10 V,<br>ID= 1 A, RG= 10�||||5||ns|
|Rise Time|tr|||||7|||
|Turn−Off Delay Time|td(off)|||||13|||
|Fall Time|tf|||||2|||
|**DRAIN−SOURCE DIODE CHARACTERISTICS**|||||||||
|Forward Diode Voltage|VSD|VGS= 0 V,<br>IS= 1 A|TJ= 25°C|||0.8|1.2|V|
||||TJ= 125°C|||0.6|||
|Reverse Recovery Time|trr|IS= 1 Adc, VGS= 0 Vdc,<br>dIS/dt = 100 A/�s||||12||ns|
|Charge Time|ta|||||9|||
|Discharge Time|tb|||||3|||
|Reverse Recovery Stored Charge|QRR|||||6||nC|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

5. Pulse Test: Pulse Width � 300 � s, Duty Cycle � 2%. 

6. Switching characteristics are independent of operating junction temperatures. 

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**2** 

**NTR5198NL** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [238 x 157] intentionally omitted <==**

**----- Start of picture text -----**<br>
15<br>1413 V GS  = 10 V VGS = 6.0 V<br>12 V GS  = 5.0 V<br>11<br>10 VGS = 4.5 V<br>9<br>8<br>7 VGS = 3.0 V VGS = 4.0 V<br>6 VGS = 3.8 V<br>5<br>4 VGS = 3.6 V<br>3 V GS  = 3.4 V<br>2 V GS  = 3.2 V<br>1<br>0<br>0 1 2 3 4 5<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>**----- End of picture text -----**<br>


**Figure 1. On−Region Characteristics** 

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**----- Start of picture text -----**<br>
0.50<br>0.45 I D  = 1 A<br>0.40 T J  = 25 ° C<br>0.35<br>0.30<br>0.25<br>0.20<br>0.15<br>0.10<br>0.05<br>3 4 5 6 7 8 9 10<br>VGS, GATE VOLTAGE (V)<br>) �<br>, DRAIN−TO−SOURCE RESISTANCE (<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**Figure 3. On−Resistance vs. Gate−to−Source Voltage** 

**==> picture [244 x 212] intentionally omitted <==**

**----- Start of picture text -----**<br>
Voltage<br>2.0<br>1.9<br>1.8 ID = 1 A<br>1.7 VGS = 10 V<br>1.6<br>1.5<br>1.4<br>1.3<br>1.2<br>1.1<br>1.0<br>0.9<br>0.8<br>0.7<br>0.6<br>−50 −25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE ( ° C)<br>Figure 5. On−Resistance Variation with<br>, DRAIN−TO−SOURCE RESISTANCE (Normalized)<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**Figure 5. On−Resistance Variation with Temperature** 

**==> picture [238 x 172] intentionally omitted <==**

**----- Start of picture text -----**<br>
15<br>14<br>13 VDS = 5 V<br>12<br>11<br>10<br>9<br>8<br>7<br>6<br>5 TJ = 25 ° C<br>4<br>3<br>2 TJ = 150 ° C<br>1 T J  = −55 ° C<br>0<br>1 2 3 4 5<br>VGS, GATE−TO−SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


**Figure 2. Transfer Characteristics** 

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**----- Start of picture text -----**<br>
0.50<br>0.45 TJ = 25 ° C VGS = 4.5 V<br>0.40<br>0.35<br>0.30<br>0.25<br>0.20 VGS = 10 V<br>0.15<br>0.10<br>0.05<br>0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15<br>ID, DRAIN CURRENT (A)<br>) �<br>, DRAIN−TO−SOURCE RESISTANCE (<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**Figure 4. On−Resistance vs. Drain Current and Gate Voltage** 

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**----- Start of picture text -----**<br>
1.150<br>1.125 I D  = 250  � A<br>1.100<br>1.075<br>1.050<br>1.025<br>1.000<br>0.975<br>0.950<br>0.925<br>0.900<br>−50 −25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE ( ° C)<br>, NORMALIZED BREAKDOWN VOLTAGE<br>DSS<br>BV<br>**----- End of picture text -----**<br>


**Figure 6. Breakdown Voltage Variation with Temperature** 

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**3** 

**NTR5198NL** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [491 x 594] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.20 10,000<br>1.15 ID = 250  � A<br>1.10 TJ = 150 ° C<br>1.05 1000<br>1.00 TJ = 125 ° C<br>0.95<br>0.90 100<br>0.85<br>0.80 T J  = 85 ° C<br>0.75 10<br>0.70<br>0.65<br>0.60 1<br>−50 −25 0 25 50 75 100 125 150 0 5 10 15 20 25 30 35 40 45 50 55 60<br>TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>Figure 7. Threshold Voltage Variation with Figure 8. Drain−to−Source Leakage Current<br>Temperature vs. Voltage<br>275 12 60<br>250 T J  = 25 ° C 11 55<br>f = 1 MHz QT<br>225 10 50<br>200 CISS VGS = 0 V 9 45<br>8 40<br>175<br>150 7 V DS V GS 35<br>6 30<br>125<br>5 25<br>100 4 QGS QGD V DS  = 48 V 20<br>75<br>3 I D  = 1 A 15<br>50 COSS 2 TJ = 25 ° C 10<br>25 CRSS 1 5<br>0 0 0<br>0 5 10 15 20 25 30 35 40 45 50 55 60 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)<br>Figure 9. Capacitance Variation Figure 10. Gate−to−Source and<br>Drain−to−Source Voltage vs. Total Charge<br>100 VDD = 30 V 10 TJ = 150 ° C<br>t d(off) V I D GS = 1 A  = 10 V TJ = 125 ° C<br>10 tr T J  = 100 ° C<br>td(on) 1 TJ = 85 ° C<br>tf<br>1<br>TJ = 25 ° C TJ = −55 ° C<br>0.1 0.1<br>1 10 100 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1<br>RG, GATE RESISTANCE ( � ) VSD, SOURCE−TO−DRAIN VOLTAGE (V)<br>, LEAKAGE (nA)<br>IDSS<br>, NORMALIZED THRESHOLD VOLTAGE<br>GS(th)<br>V<br>C, CAPACITANCE (pF)<br>, GATE−TO−SOURCE VOLTAGE (V) , DRAIN−TO−SOURCE VOLTAGE (V)<br>GS DS<br>V V<br>t, TIME (ns)<br>, SOURCE CURRENT (A)<br>IS<br>**----- End of picture text -----**<br>


**Figure 11. Resistive Switching Time Variation vs. Gate Resistance** 

**Figure 12. Diode Forward Voltage vs. Current** 

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**4** 

**NTR5198NL** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [484 x 386] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>VGS ≤  10 V<br>Single Pulse<br>10 T C  = 25 ° C 10  � S<br>100  � S<br>1 1 mS<br>10 mS<br>0.1<br>RDS(on) Limit<br>Thermal Limit<br>Package Limit dc<br>0.01<br>0.1 1 10 100<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>Figure 13. Maximum Rated Forward Biased<br>Safe Operating Area<br>1000<br>100 50% Duty Cycle<br>20%<br>10% R � JA  Steady State = 139 ° C/W<br>10 5%<br>2%<br>1%<br>Single Pulse<br>1<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t, TIME (sec)<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


**Figure 14. Thermal Impedance (Junction−to−Ambient)** 

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**5** 

**NTR5198NL** 

## **PACKAGE DIMENSIONS** 

**SOT−23 (TO−236)** CASE 318−08 ISSUE AR 

**==> picture [468 x 183] intentionally omitted <==**

**----- Start of picture text -----**<br>
D NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.<br>0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF<br>Tae 3 THE BASE MATERIAL.<br>E HE T 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.<br>1 2<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>L A 0.89 1.00 1.11 0.035 0.039 0.044<br>3X b L1 A1b 0.010.37 0.060.44 0.100.50 0.0000.015 0.0020.017 0.0040.020<br>: : e VIEW C . c 0.08 0.14 0.20 0.003 0.006 0.008<br>TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120<br>E 1.20 1.30 1.40 0.047 0.051 0.055<br>e 1.78 1.90 2.04 0.070 0.075 0.080<br>L 0.30 0.43 0.55 0.012 0.017 0.022<br>A L1 0.35 0.54 0.69 0.014 0.021 0.027<br>H E 2.10 2.40 2.64 0.083 0.094 0.104<br>T 0 −−− 10 0 −−− 10<br>GE A1 SIDE VIEW Se SEE VIEW C GR, c STYLE 21: SSS<br>END VIEW PIN 1. GATE<br>2. SOURCE<br>3. DRAIN<br>**----- End of picture text -----**<br>


**==> picture [142 x 135] intentionally omitted <==**

**----- Start of picture text -----**<br>
RECOMMENDED<br>SOLDERING FOOTPRINT*<br>3X<br>2.90 T O 0.90<br>L o| cr<br>3X 0.80 | LLL 0.95<br>PITCH<br>DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

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## **LITERATURE FULFILLMENT** : 

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