# Power MOSFET, P Channel, 20 V, 1 A, 0.18 ohm, SOT-23, Surface Mount ![Product image](https://novapart.co/image/farnell:2317617RL/) **URL**: https://novapart.co/products/NTR1P02T1G/power-mosfet-p-channel-20-v-1-a-018-ohm-sot-23 **SKU**: NTR1P02T1G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.1120 **Stock**: 1000+ **Lead Time**: 134 days (indicative) ## Description Transistor Polarity:P Channel; Continuous Drain Current Id:1A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.148ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.9V; ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 3Pins | | Channel Type | P Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 400mW | | Transistor Mounting | Surface Mount | | Rds(On) Test Voltage | 10V | | Transistor Case Style | SOT-23 | | Drain Source Voltage Vds | 20V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 1A | | Drain Source On State Resistance | 0.18ohm | | Gate Source Threshold Voltage Max | 1.9V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2317617RL/) NTR1P02, NVR1P02 ## Power MOSFET ## **−20 V, −1 A, P−Channel SOT−23 Package** ## **Features** - Ultra Low On−Resistance Provides Higher Efficiency and Extends Battery Life - RDS(on) = 0.180 VGS = −10 V RDS(on) = 0.280 VGS = −4.5 V - Power Management in Portable and Battery−Powered Products - Miniature SOT−23 Surface Mount Package Saves Board Space ## **www.onsemi.com** |**V(BR)DSS**|**RDS(on) TYP**|**ID MAX**| |---|---|---| |−20 V|148 m @ −10 V|−1.0 A| - Mounting Information for SOT−23 Package Provided - NVR Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable **P−Channel** D - These Devices are Pb−Free and are RoHS Compliant ## **Applications** - DC−DC Converters G - Computers - Printers S - PCMCIA Cards • Cellular and Cordless Telephones ## **MARKING DIAGRAM/ PIN ASSIGNMENT** **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) 3 3 **Rating Symbol Value Unit** Drain 1 Drain−to−Source Voltage VDSS −20 V 2 ~~——_r~~ Gate−to−Source Voltage − Continuous VGS ~~1)~~ ± 20 V ® P2 **SOT−23** Drain Current A − Continuous @ TA = 25 ° C ID −1.0 **CASE 318 STYLE 21** 1 2 − Pulsed Drain Current (tp ≤ 1 s) IDM −2.67 Gate Source Total Power Dissipation @ TA = 25 ° C PD 400 mW Operating and Storage Temperature Range TJ, Tstg −55 to ° C P2 = Specific Device Code 150 M = Date Code Thermal Resistance; Junction−to−Ambient R JA 300 ° C/W (Note: Microdot may be in either location)= Pb−Free Package Maximum Lead Temperature for Soldering TL 260 ° C Purposes, (1/8 ″ from case for 10 s) ~~=Pos"~~ **ORDERING INFORMATION** Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be **Device Package Shipping**[†] assumed, damage may occur and reliability may be affected. |**Device**|**Package**|**Shipping**[†]| |---|---|---| |NTR1P02T1G|NTR1P02T1G
SOT−23
(Pb−Free)|3000 / Tape & Reel| |NTR1P02T3G|NTR1P02T3G
SOT−23
(Pb−Free)|10000 / Tape & Reel| |NVR1P02T1G|NVR1P02T1G
SOT−23
(Pb−Free)|3000 / Tape & Reel| - †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: **NTR1P02T1/D** **1** © Semiconductor Components Industries, LLC, 2002 **October, 2016 − Rev. 8** ## **NTR1P02, NVR1P02** ## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)|||||| |---|---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||| |Drain−to−Source Breakdown Voltage
(VGS= 0 V, ID= −10�A)
(Positive Temperature Coefficient)|V(BR)DSS|−20|32||V
mV/°C| |Zero Gate Voltage Drain Current
(VDS= −20 V, VGS= 0 V, TJ= 25°C)
(VDS= −20 V, VGS= 0 V, TJ= 150°C)|IDSS|||−1.0
−10|�A| |Gate−Body Leakage Current (VGS=±20 V, VDS= 0 V)|IGSS|||±100|nA| |**ON CHARACTERISTICS**(Note 1)|||||| |Gate Threshold Voltage
(VDS= VGS, ID= −250�A)
(Negative Temperature Coefficient)|VGS(th)|−1.1|−1.9
−4.0|−2.3|V
mV/°C| |Static Drain−to−Source On−State Resistance
(VGS= −10 V, ID= −1.5 A)
(VGS= −4.5 V, ID= −0.75 A)|RDS(on)||0.148
0.235|0.180
0.280|�| |**DYNAMIC CHARACTERISTICS**|||||| |Input Capacitance
(VDS= −5 V, VGS= 0 V, f = 1.0 MHz)|Ciss||165||pF| |Output Capacitance
(VDS= −5 V, VGS= 0 V, f = 1.0 MHz)|Coss||110||| |Reverse Transfer Capacitance
(VDS= −5 V, VGS= 0 V, f = 1.0 MHz)|Crss||35||| |**SWITCHING CHARACTERISTICS**(Note 2)|||||| |Turn−On Delay Time
(VDD= −15 V, ID= −1 A, VGS= −5 V, RG= 2.5�)|td(on)||7.0||ns| |Rise Time
(VDD= −15 V, ID= −1 A, VGS= −5 V, RG= 2.5�)|tr||9.0||| |Turn−Off Delay Time
(VDD= −15 V, ID= −1 A, VGS= −5 V, RG= 2.5�)|td(off)||9.0||| |Fall Time
(VDD= −15 V, ID= −1 A, VGS= −5 V, RG= 2.5�)|tf||3.0||| |Total Gate Charge
(VDS= −15 V, VGS= −5 V, ID= −0.8 A)|Qtot||2.5||nC| |Gate−Source Charge
(VDS= −15 V, VGS= −5 V, ID= −0.8 A)|Qgs||0.75||| |Gate−Drain Charge
(VDS= −15 V, VGS= −5 V, ID= −0.8 A)|Qgd||1.0||| |**BODY−DRAIN DIODE RATINGS**(Note 1)|||||| |Diode Forward On−Voltage (Note 2)
(IS= −0.6 A, VGS= 0 V)
(IS= −0.6 A, VGS= 0 V, TJ= 150°C)|VSD||−0.8
−0.6|−1.0|V| |Reverse Recovery Time
(IS= −1 A, dIS/dt = 100 A/�s, VGS= 0 V)|trr||13.5||ns| ||ta||10.5||| ||tb||3.0||| |Reverse Recovery Stored Charge
(IS= −1 A, dIS/dt = 100 A/�s, VGS= 0 V)|QRR||0.008||�C| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 300 � s, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature. **www.onsemi.com** **2** **NTR1P02, NVR1P02** **==> picture [490 x 603] intentionally omitted <==** **----- Start of picture text -----**
2.5 2
TJ = 25 ° C VDS ≥ −10 V TJ = 25 ° C
2.25 1.75
−4 V
2
−4.5 V −3.5 V 1.5
1.75
1.25
1.5
1.25 1
1
0.75
0.75 −3 V TJ = 125 ° C TJ = −40 ° C
0.5
0.5
0.25
0.25 VGS = −2.5 V
0 0
0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 1 1.5 2 2.5 3 3.5 4
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
0.45 0.275
0.4 V GS = −4.5 V 0.25 VGS = −10 V
0.35 TJ = 150 ° C 0.225 TJ = 150 ° C
0.2
0.3
0.175
0.25 TJ = 25 ° C 0.15 TJ = 25 ° C
0.2 TJ = −40 ° C 0.125
0.15
0.1
TJ = −40 ° C
0.1 0.075
0.05 0.05
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
−ID, DRAIN CURRENT (AMPS) −ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current Figure 4. On−Resistance versus Drain Current
and Temperature and Temperature
2.5 1000
VGS = 0 V
2 ID = −1.5 A
VGS = −10 V TJ = 150 ° C
100
1.5
TJ = 125 ° C
1
10
0.5
0 1
−45 −20 5 30 55 80 105 130 155 1 3 5 7 9 11 13 15 17 19 21
TJ, JUNCTION TEMPERATURE ( ° C) −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, DRAIN CURRENT (AMPS) , DRAIN CURRENT (AMPS)
D D
−I −I
)
� )
, DRAIN−TO−SOURCE RESISTANCE ( �
, DRAIN−TO−SOURCE RESISTANCE (
DS(on)
R DS(on)
R
, LEAKAGE (nA)
(NORMALIZED) DSS
−I
, DRAIN−TO−SOURCE RESISTANCE
DS(on)
R
**----- End of picture text -----**
**Figure 5. On−Resistance Variation with Temperature** **Figure 6. Drain−to−Source Leakage Current versus Voltage** **www.onsemi.com** **3** **NTR1P02, NVR1P02** **==> picture [481 x 206] intentionally omitted <==** **----- Start of picture text -----**
300 6
C iss T J = 25 ° C Q T
250
C rss 4.5
200 VDS
150 Ciss 3 Q1 Q2
VGS
100
Coss 1.5
50 ID = −1 A
VDS = 0 V VGS = 0 V Crss TJ = 25 ° C
0 0
10 5 0 5 10 15 20 25 0 0.5 1 1.5 2
−VGS −VDS QG, TOTAL GATE CHARGE (nC)
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
GS
−V
**----- End of picture text -----**
**Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge** **Figure 7. Capacitance Variation** **==> picture [491 x 175] intentionally omitted <==** **----- Start of picture text -----**
100 1.001
VIDDD = −1 A = −15 V 0.901 VTJGS = 25= 0 V ° C
VGS = −5 V 0.801
0.701
tr 0.601
10 0.501
td(off) td(on)
0.401
0.301
0.201
tf
0.101
1 0.001
1 10 100 2.0E−01 3.0E−01 4.0E−01 5.0E−01 6.0E−01 7.0E−01
RG, GATE RESISTANCE ( � ) VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
t, TIME (ns)
, SOURCE CURRENT (AMPS)
IS
**----- End of picture text -----**
**Figure 9. Resistive Switching Time Variation versus Gate Resistance** **Figure 10. Diode Forward Voltage versus Current** **www.onsemi.com** **4** **NTR1P02, NVR1P02** ## **PACKAGE DIMENSIONS** **SOT−23 (TO−236)** CASE 318−08 ISSUE AR **==> picture [462 x 328] intentionally omitted <==** **----- Start of picture text -----**
D NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
a 3 = THE BASE MATERIAL.
| E HE T 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.
1 2
MILLIMETERS INCHES
DIM MIN NOM MAX MIN NOM MAX
L A 0.89 1.00 1.11 0.035 0.039 0.044
3X b L1 A1b 0.010.37 0.060.44 0.100.50 0.0000.015 0.0020.017 0.0040.020
e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008
TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120
E 1.20 1.30 1.40 0.047 0.051 0.055
e 1.78 1.90 2.04 0.070 0.075 0.080
L 0.30 0.43 0.55 0.012 0.017 0.022
A L1 0.35 0.54 0.69 0.014 0.021 0.027
H E 2.10 2.40 2.64 0.083 0.094 0.104
T 0 ° −−− 10 ° 0 ° −−− 10 °
A1 SIDE VIEW SEE VIEW C c STYLE 21:
END VIEW PIN 1. GATE
2. SOURCE
3. DRAIN
RECOMMENDED
SOLDERING FOOTPRINT*
3X
2.90 _ 0.90
Lo | cr
3X 0.80 | LL L 0.95
PITCH
DIMENSIONS: MILLIMETERS
**----- End of picture text -----**
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