# Power MOSFET, N Channel, 20 V, 224 mA, 0.65 ohm, XLLGA, Surface Mount

![Product image](https://novapart.co/image/farnell:2845387/)

**URL**: https://novapart.co/products/NTNS3193NZT5G/power-mosfet-n-channel-20-v-224-ma-065-ohm-xllga
**SKU**: NTNS3193NZT5G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.0580
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:224mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.65ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V;

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 120mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | XLLGA |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 224mA |
| Drain Source On State Resistance | 0.65ohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2845387/)

## NTNS3193NZ 

## MOSFET – Single N-Channel, Small Signal, XLLGA3, 0.62 x 0.62 x 0.4 20 V, 224 mA 

## **http://onsemi.com** 

## **Features** 

- Single N−Channel MOSFET 

- Ultra Small and Thin Package (0.62 x 0.62 x 0.4 mm) 

- Low RDS(on) Solution in 0.62 x 0.62 mm Package 

- 1.5 V Gate Voltage Rating 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

||**MOSFET**||
|---|---|---|
|**V(BR)DSS**|**RDS(on) MAX**|**ID MAX**|
|20 V|1.4  @ 4.5 V|224 mA|
||1.9  @ 2.5 V||
||2.2  @ 1.8 V||
||4.3  @ 1.5 V||



## **Applications** 

- Small Signal Load Switch 

- Analog Switch 

|**Parameter**<br>~~ee~~|**Parameter**<br>~~ee~~|**Parameter**<br>~~ee~~|**Symbol**<br>~~ee~~|**Value**|**Units**|
|---|---|---|---|---|---|
|Drain-to-Source Voltage<br>~~ee ~~<br>~~———~~|||VDSS<br> ~~ee~~<br>~~———~~|20<br>~~———~~|V<br>~~———~~|
|Gate-to-Source Voltage<br>~~———~~<br>~~|~~<br>~~|~~|||VGS<br>~~———~~<br>~~|~~<br>|±8.0<br>~~———~~<br>~~||~~<br>|V<br>~~———~~<br>|
|Continuous Drain<br>Current (Note 1)<br>~~| ~~|Steady<br>State<br>~~-rF]~~|TA= 25°C<br>~~|~~<br>~~-rF]~~|ID<br>~~|~~<br>~~-rF]~~|224<br>~~||~~<br>~~-rF]~~|mA<br>~~-rF]~~|
|||TA= 85°C<br>~~|~~<br>~~-rF]~~||162<br>~~||~~<br>~~-rF]~~||
||t≤5 s<br> ~~-rF]~~|TA= 25°C<br>~~|~~<br>~~-rF]~~||241<br>~~| |~~<br>~~-rF]~~||
|Power Dissipa-<br>tion (Note 1)<br> <br>~~Eee~~|Steady<br>State<br> ~~-rF]~~<br>~~Eee~~|TA= 25°C<br>~~-rF]~~<br>~~Eee~~|PD<br>~~-rF]~~<br>~~Eee~~|120<br>~~-rF]~~<br>~~Eee~~|mW<br>~~-rF]~~<br>~~Eee~~|
||t≤5 s<br>~~Eee~~|TA= 25°C<br>~~Eee~~||139<br>~~Eee~~||
|Pulsed Drain Current<br>~~Eee~~||tp= 10 s<br>~~Eee~~|IDM<br>~~Eee~~|673<br>~~Eee~~|mA<br>~~Eee~~|
|Operating Junction and Storage<br>Temperature<br>~~So~~<br>~~ee~~|||TJ,<br>TSTG<br>~~So~~<br>~~e~~~~**e**~~<br>~~e~~|-55 to<br>150<br>~~So~~<br>~~**e**s~~<br>~~ee~~|°C<br>~~So~~<br>~~ee~~|
|Source Current (Body Diode)<br>~~ee~~<br>~~ee~~|||IS<br>~~ee~~<br>~~e~~~~**e**~~<br>~~e~~|120<br>~~ee~~<br>~~**e**s~~<br>~~ee~~|mA<br>~~ee~~<br>~~ee~~|
|Lead Temperature for Soldering Purposes<br>(1/8″from case for 10 s)<br>~~ee~~|||TL<br>~~e~~~~**e**~~<br>~~e~~|260<br>~~**e**s~~<br>~~ee~~|°C<br>~~ee~~|



**==> picture [168 x 203] intentionally omitted <==**

**----- Start of picture text -----**<br>
N−Channel MOSFET<br>D (3)<br>G (1)<br>~<O S (2)<br>MARKING<br>DIAGRAM<br>3 1<br>2 XLLGA3 A M<br>CASE 713AB<br>e a<br>1<br>A = Specific Device Code<br>M = Date Code<br>**----- End of picture text -----**<br>


**ORDERING INFORMATION** 

|**Device**<br>**Package**<br>**Shipping**†<br>NTNS3193NZT5G<br>XLLGA3<br>(Pb−Free)<br>8000 /<br>Tape & Reel<br>†For information on tape and reel specifications,<br>~~ee~~|
|---|
|including part orientation and tape sizes, please<br>refer to our Tape and Reel Packaging Specifications<br>Brochure, BRD8011/D.|



## **THERMAL RESISTANCE RATINGS** 

|**THERMAL RESISTANCE RATINGS**||||
|---|---|---|---|
|**Parameter**|**Symbol**|**Max**|**Units**|
|Junction-to-Ambient – Steady State (Note 1)|RθJA|1040|°C/W|
|Junction-to-Ambient – t≤5 s (Note 1)|RθJA|900||



1. Surface Mounted on FR4 Board using the minimum recommended pad size, (or 2 mm[2] ), 1 oz Cu. 

2. Pulse Test: pulse width ≤ 300 s, duty cycle ≤ 2%. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2012 **June, 2019 − Rev. 1** 

**NTNS3193NZ/D** 

## **NTNS3193NZ** 

**ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) 

|**ELECTRICAL CHARACTERISTIC**|**S **(TJ= 25°C unles|s otherwise specified)|s otherwise specified)|||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Units**|
|**OFF CHARACTERISTICS**||||||||
|Drain-to-Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID= 250�A||20|||V|
|Drain-to-Source Breakdown Voltage<br>Temperature Coefficient|V(BR)DSS/TJ|ID= −250�A, ref to 25°C|||19||mV/°C|
|Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,<br>VDS= 20 V|TJ= 25°C|||1.0|�A|
|Gate-to-Source Leakage Current|IGSS|VDS= 0 V, VGS=±8.0 V||||±2.0|�A|
|**ON CHARACTERISTICS**(Note 3)||||||||
|Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= 250�A||0.4||1.0|V|
|Negative Gate Threshold<br>Temperature Coefficient|VGS(TH)/TJ||||1.9||mV/°C|
|Drain-to-Source On Resistance|RDS(on)|VGS= 4.5 V, ID= 100 mA|||0.65|1.4|�|
|||VGS= 2.5 V, ID= 50 mA|||0.9|1.9||
|||VGS= 1.8 V, ID= 20 mA|||1.1|2.2||
|||VGS= 1.5 V, ID= 10 mA|||1.4|4.3||
|Forward Transconductance|gFS|VDS= 5 V, ID= 100 mA|||0.56||S|
|Source−Drain Diode Voltage|VSD|VGS= 0 V, IS= 10 mA|||0.55|1.0|V|
|**CHARGES & CAPACITANCES**||||||||
|Input Capacitance|CISS|VGS= 0 V, f = 1 MHz,<br>VDS= 15 V|||15.8||pF|
|Output Capacitance|COSS||||3.5|||
|Reverse Transfer Capacitance|CRSS||||2.4|||
|Total Gate Charge|QG(TOT)|VGS= 4.5 V, VDS= 15 V,<br>ID= 200 mA|||0.70||nC|
|Threshold Gate Charge|QG(TH)||||0.05|||
|Gate−to−Source Charge|QGS||||0.14|||
|Gate−to−Drain Charge|QGD||||0.10|||
|**SWITCHING CHARACTERISTICS, VGS = 4.5 V**(Note 3)||||||||
|Turn-On Delay Time|td(ON)|VGS= 4.5 V, VDD= 15 V,<br>ID= 200 mA, RG= 2�|||18||ns|
|Rise Time|tr||||35|||
|Turn-Off Delay Time|td(OFF)||||201|||
|Fall Time|tf||||110|||



3. Switching characteristics are independent of operating junction temperatures. 

**http://onsemi.com** 

**2** 

**NTNS3193NZ** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [492 x 618] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.0 3.0 V VGS = 2.5 V 1.0 TJ = −55 ° C<br>0.9 0.9 V DS  = 5 V<br>0.8 3.5 V 2.0 V 0.8 T J  = 25 ° C<br>0.7 4.0 V 0.7 TJ = 125 ° C<br>4.5 V 1.8 V<br>0.6 0.6<br>0.5 0.5<br>1.5 V<br>0.4 0.4<br>0.3 0.3<br>0.2 1.2 V 0.2<br>0.1 0.1<br>0 0<br>0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.5 1.0 1.5 2.0 2.5 3.0<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)<br>Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics<br>5.0 5.0<br>4.5 TJ = 25 ° C 4.5 TJ = 25 ° C<br>4.0 I D  = 0.1 A 4.0<br>3.5 3.5 VGS = 1.5 V<br>3.0 3.0<br>2.5 2.5 V GS  = 1.8 V<br>2.0 2.0<br>1.5 1.5 V GS  = 2.5 V<br>1.0 1.0<br>0.5 0.5 V GS  = 4.5 V<br>0 0<br>1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0<br>VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A)<br>Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and<br>Voltage Gate Voltage<br>1.8 1000<br>1.7 VGS = 4.5 V<br>1.6 I D  = 100 mA T J  = 125 ° C<br>1.5<br>100<br>1.4<br>1.3 V GS = 1.8 V<br>ID = 20 mA<br>1.2 TJ = 85 ° C<br>1.1<br>10<br>1.0<br>0.9<br>0.8<br>0.7 1<br>−50 −25 0 25 50 75 100 125 150 2 4 6 8 10 12 14 16 18 20<br>TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current<br>Temperature vs. Voltage<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>) � ) �<br>, DRAIN−TO−SOURCE RESISTANCE ( , DRAIN−TO−SOURCE RESISTANCE (<br>DS(on) DS(on)<br>R R<br>, LEAKAGE (nA)<br>RESISTANCE IDSS<br>, NORMALIZED DRAIN−TO−SOURCE<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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**3** 

**NTNS3193NZ** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [490 x 174] intentionally omitted <==**

**----- Start of picture text -----**<br>
30 5 18<br>QT<br>VGS = 0 V<br>25 TJ = 25 ° C 4 15<br>f = 1 MHz<br>VDS VGS<br>20 C iss 12<br>3<br>15 9<br>2<br>10 QGS QGD 6<br>5 Coss 1 V T JDS  = 25  = 15 V ° C 3<br>Crss ID = 0.2 A<br>0 0 0<br>0 2 4 6 8 10 12 14 16 18 20 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)<br>V<br>DS<br>C, CAPACITANCE (pF)<br>, GATE−TO−SOURCE VOLTAGE (V)<br>GS<br>V , DRAIN−TO−SOURCE VOLTAGE (V)<br>**----- End of picture text -----**<br>


**Figure 7. Capacitance Variation** 

**Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge** 

**==> picture [491 x 409] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000 10<br>VGS = 4.5 V<br>VDD = 15 V<br>T J  = 25 ° C T J = 125 ° C<br>td(off) 1<br>tf<br>100<br>T J  = −55 ° C<br>tr 0.1<br>td(on)<br>10 0.01<br>1 10 100 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3<br>RG, GATE RESISTANCE ( � ) VSD, SOURCE−TO−DRAIN VOLTAGE (V)<br>Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current<br>vs. Gate Resistance<br>0.85 1<br>10  � s<br>0.75<br>ID = 250  � A 100  � s<br>0.1<br>0.65 1 ms<br>VGS ≤  8 V<br>Single Pulse<br>0.55 T C  = 25 ° C 10 ms<br>0.01<br>RDS(on) Limit dc<br>0.45 Thermal Limit<br>Package Limit<br>0.35 0.001<br>−50 −25 0 25 50 75 100 125 150 0.1 1 10 100<br>TJ, TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>Figure 11. Threshold Voltage Figure 12. Maximum Rated Forward Biased<br>Safe Operating Area<br>t, TIME (ns)<br>, SOURCE CURRENT (A)<br>IS<br>VOLTAGE (V)<br>, DRAIN CURRENT (A)<br>ID<br>, GATE−TO−SOURCE THRESHOLD<br>GS(th)<br>V<br>**----- End of picture text -----**<br>


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**4** 

**NTNS3193NZ** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [492 x 197] intentionally omitted <==**

**----- Start of picture text -----**<br>
1200<br>1100 R � JA Steady State = 1040 ° C/W<br>1000<br>900<br>800<br>700<br>600 Duty Cycle = 0.5<br>500<br>400 0.05 0.02 0.01<br>300<br>0.20<br>200<br>0.10<br>100 Single Pulse<br>0<br>1E−06 1E−05 1E−04 1E−03 1E−02 1E−01 1E+00 1E+01 1E+02 1E+03<br>t, TIME (s)<br>C/W)<br>( °<br>R(t), EFFECTIVE TRANSIENT THERMAL RESPONSE<br>**----- End of picture text -----**<br>


**Figure 13. FET Thermal Response** 

## **MINIMUM RECOMMENDED** 

## **SOLDER FOOTPRINT*** 

**==> picture [129 x 96] intentionally omitted <==**

**----- Start of picture text -----**<br>
2X<br>0.20<br>0.60<br>1<br>3<br>2X<br>0.20<br>2<br>0.35 0.28<br>PITCH 0.62<br>DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br>


*Dependent upon end user capabilities, this footprint could be used as a minimum. 

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**5** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**XLLGA3, 0.62x0.62, 0.35P** CASE 713AB ISSUE O 

## **SCALE 8:1** 

## DATE 25 SEP 2012 

**==> picture [197 x 411] intentionally omitted <==**

**----- Start of picture text -----**<br>
D A B<br>PIN ONE<br>REFERENCE<br>ÉÉ<br>man<br>E<br>ÉÉ<br>0.10 C<br>a n it] $<br>0.10 C<br>e l y TOP VIEW<br>0.10 C 4<br>A<br>3X 0.10 C<br>A1<br>SIDE VIEW C [SEATING] PLANE<br>D3<br>e/2<br>D2<br>e E2<br>2<br>3<br>a ll 1 0.10 M C A B<br>2X b L2<br>0.10 M C A B K 0.05 M C<br>~ot +<br>0.05 M C ne 2X L<br>BOTTOM VIEW<br>RECOMMENDED<br>SOLDER FOOTPRINT*<br>2X 0.280 PACKAGE<br>OUTLINE<br>0.600<br>LT 1<br>3<br>2X<br>0.200<br>2<br>0.350 ee! 0.350<br>PITCH [7 0.760<br>DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br>


NOTES: 

**==> picture [134 x 125] intentionally omitted <==**

**----- Start of picture text -----**<br>
1. DIMENSIONING AND TOLERANCING PER<br>ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>MILLIMETERS<br>DIM MIN MAX<br>A 0.340 0.440<br>A1 0.000 0.030<br>b 0.100 0.200<br>D 0.620 BSC<br>D2 0.175 BSC<br>D3 0.205 BSC<br>E 0.620 BSC<br>E2 0.400 0.600<br>e 0.350 BSC<br>K 0.200 REF<br>L 0.090 0.210<br>L2 0.110 0.310<br>**----- End of picture text -----**<br>


**GENERIC MARKING DIAGRAM*** X M X = Specific Device Code M = Date Code to device data sheet for actual part a 

*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G”, may or not be present. 

- *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON84074E** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: XLLGA3, 0.62X0.62, 0.35P PAGE 1 OF 1** ~~ee~~ ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2019 

**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi’s** product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

**LITERATURE FULFILLMENT** : **TECHNICAL SUPPORT Email Requests to:** orderlit@onsemi.com **North American Technical Support: Europe, Middle East and Africa Technical Support:** Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910 **onsemi Website:** www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative 

◊ 

**==> picture [232 x 43] intentionally omitted <==**



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- [Supplier page](https://es.farnell.com/on-semiconductor/ntns3193nzt5g/mosfet-n-ch-20v-0-224a-xllga-3/dp/2845387)
---

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