# Power MOSFET, N Channel, 150 V, 174 A, 4450 µohm, TDFNW, Surface Mount
**URL**: https://novapart.co/products/NTMTSC4D3N15MC/power-mosfet-n-channel-150-v-174-a-4450-ohm-tdfnw
**SKU**: NTMTSC4D3N15MC
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €2.8500
**Stock**: 1000+
**Lead Time**: 2 days (indicative)
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | DUAL COOL |
| Qualification | - |
| Power Dissipation | 293W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TDFNW |
| Drain Source Voltage Vds | 150V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 174A |
| Drain Source On State Resistance | 4450µohm |
| Gate Source Threshold Voltage Max | 3.6V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:3766220/)
## MOSFET – Power, Single N-Channel, TDFNW8 DUAL COOL 150 V, 4.45 m 174 A
## NTMTSC4D3N15MC
**www.onsemi.com**
## **Features**
- Small Footprint (8x8 mm) for Compact Design
- Low R to Minimize Conduction Losses DS(on)
- Low QG and Capacitance to Minimize Driver Losses
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
## **Typical Applications**
- Power Tools, Battery Operated Vacuums
- UAV/Drones, Material Handling
- BMS/Storage, Home Automation
**MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted)
**Symbol Parameter Value Unit** VDSS Drain−to−Source Voltage 150 V VGS Gate−to−Source Voltage ± 20 V ID Continuous Drain Steady TC = 25 ° C 174 A Current R JC (Note 2) State PD Power Dissipation 293 W R JC (Note 2) ID Continuous Drain Steady TA = 25 ° C 22 A Current R JA State (Notes 1, 2) PD Power Dissipation 5 W R JA (Notes 1, 2) ~~t+) EE~~ IDM Pulsed Drain Current TA = 25 ° C, tp = 10 s 900 A TJ, Tstg Operating Junction and Storage Temperature −55 to ° C Range +175 ~~el~~ IS Source Current (Body Diode) 244 A ~~ee~~ EAS Single Pulse Drain−to−Source Avalanche 354 mJ Energy (IL = 48.5 Apk, L = 0.3 mH) ~~pop~~ TL Lead Temperature Soldering Reflow for 260 ° C Soldering Purposes (1/8 ″ from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the ~~pop~~ device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 in[2] pad size, 1 oz Cu pad.
2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted
**==> picture [190 x 286] intentionally omitted <==**
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——— V(BR)DSS RDS(ON) MAX ID MAX
4.45 m @ 10 V
150 V 174 A
5 m @ 8 V
D (5, 6, 7, 8)
G (1)
S (2, 3, 4)
N−CHANNEL MOSFET
Top Bottom
TDFNW8 8.3x8.4, 2P
PQFN88
CASE 507AS
**----- End of picture text -----**
**==> picture [122 x 136] intentionally omitted <==**
**----- Start of picture text -----**
MARKING DIAGRAM
|
4D3N15M AWLYW
4D3N15M = Specific Device Code
A = Assembly Location
WL = Wafer Lot Code
Y = Year Code
W = Work Week Code
**----- End of picture text -----**
**ORDERING INFORMATION**
**Device Package Shipping**[†] NTMTSC4D3N15MC TDFNW8 3000 / Tape & (Pb−Free) Reel ~~Fr~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
Publication Order Number: **NTMTSC4D3N15MC/D**
**1**
© Semiconductor Components Industries, LLC, 2019 **November, 2020 − Rev. 0**
**NTMTSC4D3N15MC**
## **THERMAL RESISTANCE RATINGS**
|**Symbol**|**Parameter**|**Max**|**Unit**|
|---|---|---|---|
|R�JC|Junction−to−Case – Steady State (Note 2)|0.5|°C/W|
|R�JA|Junction−to−Ambient – Steady State (Note 2)|30||
## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted)
|**ELECTRICAL**|**CHARACTERISTICS**(TJ= 25°C unless oth|erwise noted)|erwise noted)|||||
|---|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||||
|V(BR)DSS|Drain�to�Source Breakdown Voltage|VGS= 0 V, ID=|250�A|150|−|−|V|
|V(BR)DSS/ TJ|Drain�to�Source Breakdown Voltage
Temperature Coefficient|ID= 250�A, ref|to 25°C|−|49.84|−|mV/°C|
|IDSS|Zero Gate Voltage Drain Current|VGS = 0 V,
VDS= 120 V|TJ= 25°C|−|−|1|�A|
||||TJ= 125°C|−|−|10|�A|
|IGSS|Gate�to�Source Leakage Current|VDS= 0 V, VGS|=±20 V|−|−|±100|nA|
|**ON CHARACTERISTICS**(Note 3)||||||||
|VGS(TH)|Gate Threshold Voltage|VGS= VDS, ID=|521�A|2.5|3.6|4.5|V|
|VGS(TH)/ TJ|Negative Threshold Temperature Coefficient|ID= 250�A, ref|to 25°C|−|−9.93|−|mV/°C|
|RDS(on)|Drain�to�Source On Resistance|VGS= 10 V, ID=|95 A|−|3.4|4.45|m�|
|||VGS= 8 V, ID=|47 A|−|3.7|5||
|gFS|Forward Transconductance|VDS= 5 V, ID= 95 A||−|177|−|S|
|RG|Gate−Resistance|TA= 25°C||−|1.1|−|�|
|**CHARGES & CAPACITANCES**||||||||
|CISS|Input Capacitance|VGS= 0 V, f = 1 MHz,
VDS= 75 V||−|6514|−|pF|
|COSS|Output Capacitance|||−|1750|−||
|CRSS|Reverse Transfer Capacitance|||−|12.5|−||
|QG(TOT)|Total Gate Charge|VGS= 10 V, VDS= 75 V,
ID= 95 A||−|79|−|nC|
|QG(TH)|Threshold Gate Charge|||−|21|−||
|QGS|Gate−to−Source Charge|||−|36|−||
|QGD|Gate−to−Drain Charge|||−|11|−||
|VGP|Plateau Voltage|||−|5.8|−||
|QOSS|Output Charge|VGS= 0 V, VDS= 75 V||−|225|−|nC|
|**SWITCHING CHARACTERISTICS, VGS = 10 V**(Note 3)||||||||
|td(ON)|Turn�On Delay Time|VGS= 10 V, VDS=75 V,
ID= 95 A, RG= 6�||−|38|−|ns|
|tr|Rise Time|||−|11|−||
|td(OFF)|Turn�Off Delay Time|||−|48|−||
|tf|Fall Time|||−|8|−||
|**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||||
|VSD|Forward Diode Voltage|VGS= 0 V,
IS= 95 A|TJ= 25°C|−|0.86|1.2|V|
||||TJ= 125°C|−|0.80|−||
|tRR|Reverse Recovery Time|VGS= 0 V, dIS/dt = 100 A/�s,
IS= 95 A||−|85|−|ns|
|ta|Charge Time|||−|58|−||
|tb|Discharge Time|||−|38|−||
|QRR|Reverse Recovery Charge|||−|194|−|nC|
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Switching characteristics are independent of operating junction temperatures
**www.onsemi.com**
**2**
**NTMTSC4D3N15MC**
## **TYPICAL CHARACTERISTICS**
**==> picture [242 x 157] intentionally omitted <==**
**----- Start of picture text -----**
176
VGS = 10 V to 6.5 V
160
6.0 V
144
128
112
96
80
64 5.5 V
48
32
16 5.0 V
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
, DRAIN CURRENT (A)
ID
**----- End of picture text -----**
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
**Figure 1. On−Region Characteristics**
**==> picture [239 x 157] intentionally omitted <==**
**----- Start of picture text -----**
176
160 V DS = 5 V
144
128
112
96
80
64 T J = 25 ° C
48
32
160 T J = 175 ° C TJ = −55 ° C
0 1 2 3 4 5 6 7 8 9 10
, DRAIN CURRENT (A)
ID
**----- End of picture text -----**
VGS, GATE−TO−SOURCE VOLTAGE (V)
**Figure 2. Transfer Characteristics**
**==> picture [490 x 392] intentionally omitted <==**
**----- Start of picture text -----**
100 6
90 TJ = 25 ° C TJ = 25 ° C
ID = 95 A
80 5
70
60 4 VGS = 8 V
50
VGS = 10 V
40 3
30
20 2
10
0 1
5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10 0 30 60 90 120 150 180 210
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and
Voltage Gate Voltage
2.5 1M
VGS = 10 V VGS = 0 V
ID = 95 A
2.0 100K TJ = 175 ° C
T J = 150 ° C
1.5 10K
TJ = 125 ° C
1.0 1K
0.5 100
−50 −25 0 25 50 75 100 125 150 175 0 30 60 90 120 150
TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
) � ) �
, DRAIN−TO−SOURCE RESISTANCE (m , DRAIN−TO−SOURCE RESISTANCE (m
DS(on) DS(on)
R R
, LEAKAGE (nA)
, NORMALIZED DRAIN−TO− SOURCE RESISTANCE IDSS
DS(on)
R
**----- End of picture text -----**
**Figure 5. On−Resistance Variation with Temperature**
**Figure 6. Drain−to−Source Leakage Current vs. Voltage**
**www.onsemi.com**
**3**
**NTMTSC4D3N15MC**
## **TYPICAL CHARACTERISTICS**
**==> picture [243 x 156] intentionally omitted <==**
**----- Start of picture text -----**
10K
CISS
1K COSS
100
10
VGS = 0 V CRSS
TJ = 25 ° C
f = 1 MHz
1
0 25 50 75 100 125 150
C, CAPACITANCE (pF)
**----- End of picture text -----**
**==> picture [150 x 9] intentionally omitted <==**
**----- Start of picture text -----**
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
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**Figure 7. Capacitance Variation**
**==> picture [237 x 173] intentionally omitted <==**
**----- Start of picture text -----**
10
9 QG(TOT)
8
7 QGS QGD
6
5
4
3
2 VDS = 75 V
ID = 95 A
1 T J = 25 ° C
0
0 10 20 30 40 50 60 70 80
QG, TOTAL GATE CHARGE (nC)
, GATE−TO−SOURCE VOLTAGE (V)
GS
V
**----- End of picture text -----**
**Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge**
**==> picture [491 x 383] intentionally omitted <==**
**----- Start of picture text -----**
1K 1K
VGS = 10 V VGS = 0 V
VDS = 75 V
I D = 95 A
100
100 t r
td(off) tf
td(on) 10
10 T J = 175 ° C T J = 150 ° C
1
1 0.1 TJ = 25 ° C TJ = −55 ° C
1 10 100 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
RG, GATE RESISTANCE ( � ) VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current
vs. Gate Resistance
10K
1K
100
10 � s
100 TJ(initial) = 25 ° C
100 � s
10 TSingle PulseC = 25 ° C 10 TJ(initial) = 125 ° C
VGS ≤ 10 V 500 � s
1 ms
1 RDS(on) Limit 10 ms
Thermal Limit
100 ms
Package Limit 1 s
0.1 1
1 10 100 1K 0.000001 0.00001 0.0001 0.001 0.01 0.1 1
VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (sec)
t, TIME (ns)
, SOURCE CURRENT (A)
IS
, DRAIN CURRENT (A)
, DRAIN CURRENT (A)
ID
IPEAK
**----- End of picture text -----**
**Figure 11. Safe Operating Area**
**Figure 12. IPEAK vs. Time in Avalanche**
**www.onsemi.com**
**4**
**NTMTSC4D3N15MC**
## **TYPICAL CHARACTERISTICS**
**==> picture [491 x 172] intentionally omitted <==**
**----- Start of picture text -----**
1
50% Duty Cycle
20%
0.1
10%
5%
2%
0.01
1%
0.001
Single Pulse
0.0001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1
PULSE TIME (sec)
C/W)
°
(
JC
�
Z
**----- End of picture text -----**
**Figure 13. Thermal Characteristics**
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**5**
**NTMTSC4D3N15MC**
## **PACKAGE DIMENSIONS**
## **TDFNW8 8.3x8.4, 2P**
CASE 507AS ISSUE A
**==> picture [61 x 36] intentionally omitted <==**
**==> picture [132 x 31] intentionally omitted <==**
**www.onsemi.com**
**6**
**NTMTSC4D3N15MC**
DUAL COOL is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
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**7**
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