# Power MOSFET, N Channel, 60 V, 235 A, 1500 µohm, DFN, Surface Mount ![Product image](https://novapart.co/image/farnell:3265482/) **URL**: https://novapart.co/products/NTMFSC1D6N06CL/power-mosfet-n-channel-60-v-235-a-1500-ohm-dfn **SKU**: NTMFSC1D6N06CL **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.9920 **Stock**: 1000+ **Lead Time**: 127 days (indicative) ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | Lead (25-Jun-2025) | | No. Of Pins | 8Pins | | Channel Type | N Channel | | Product Range | DUAL COOL | | Qualification | - | | Power Dissipation | 166W | | Transistor Mounting | Surface Mount | | Rds(On) Test Voltage | 10V | | Transistor Case Style | DFN | | Drain Source Voltage Vds | 60V | | Operating Temperature Max | 175°C | | Continuous Drain Current Id | 235A | | Drain Source On State Resistance | 1500µohm | | Gate Source Threshold Voltage Max | 2V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3265482/) # **DATA SHEET www.onsemi.com** ## MOSFET ~~———~~ - Power, @ DUAL COOL N-Channel, DFN8 5x6 60 V, 1.5 m 235 A NTMFSC1D6N06CL **V(BR)DSS RDS(ON) MAX ID MAX** ~~rra~~ 1.5 m @ 10 V 60 V 235 A 2.3 m @ 4.5 V ~~Poe~~ # **N−Channel MOSFET** ## **Features** - Advanced Dual−sided Cooled Packaging - Ulra Low RDS(on) - MSL1 Robust Packaging Design ## **Typical Applications** - Orring FET/Load Switching - Synchronous Rectifier - DC−DC Conversion ## **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) |**MAXIMUM RATINGS**(TJ = 25J = 25= 25°C unless otherwise noted)|**MAXIMUM RATINGS**(TJ = 25J = 25= 25°C unless otherwise noted)|**MAXIMUM RATINGS**(TJ = 25J = 25= 25°C unless otherwise noted)|C unless otherwise noted)||| |---|---|---|---|---|---| |**Parameter**|||**Symbol**|**Value**|**Unit**| |Drain−to−Source Voltage|||VDSS|60|V| |Gate−to−Source Voltage|||VGS|±20|V| |Continuous Drain
Current R JC(Note 2)|Steady
State|TC= 25°C|ID|235|A| |Power Dissipation
R JC(Note 2)|||PD|166|W| |Continuous Drain
Current R JA
(Notes 1, 2)|Steady
State|TA= 25°C|ID|36|A| |Power Dissipation
R JA(Notes 1, 2)|||PD|3.8|W| |Pulsed Drain Current
~~Se~~|TA= 25°C, tp= 10 s
~~Se~~||IDM|900|A| |Operating Junction and Storage Temperature
Range|||TJ, Tstg|−55 to
+175|°C| |Source Current (Body Diode)|||IS|164|A| |Single Pulse Drain−to−Source Avalanche
Energy (IL(pk)= 17 A)
~~a~~|||EAS|451|mJ| |Lead Temperature Soldering Reflow for Solder-
ing Purposes (1/8″from case for 10 s)|||TL|300|°C| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ## **ORDERING INFORMATION** See detailed ordering and shipping information on page 5 of this data sheet. # **THERMAL RESISTANCE MAXIMUM RATINGS** # **Parameter Symbol Value Unit** ~~a~~ Junction−to−Case − Steady State (Note 2) R JC 0.9 ° C/W Junction−to−Top Source − Steady State R JC 1.4 (Note 2) ~~——pt~~ Junction−to−Ambient − Steady State (Note 2) R JA 39 1. Surface−mounted on FR4 board using a 1 in[2] pad size, 1 oz Cu pad. 2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. # © Semiconductor Components Industries, LLC, 2018 **January, 2023 − Rev. 5** Publication Order Number: **NTMFSC1D6N06CL/D** **1** ## **NTMFSC1D6N06CL** ## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) |**ELECTRICAL CHARACTERISTICS**(TJ=|25°C unless|otherwise specified)|otherwise specified)||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||||| |Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID=|250�A|60|||V| |Drain−to−Source Breakdown Voltage
Temperature Coefficient|V(BR)DSS/
TJ|ID= 250�A, ref|to 25°C||12.7||mV/°C| |Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,
VDS= 60 V|TJ= 25°C|||10|�A| ||||TJ= 125°C|||100|| |Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS= 20 V||||100|nA| |**ON CHARACTERISTICS**(Note 3)|||||||| |Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= 250�A||1.2||2.0|V| |Negative Threshold Temperature Coefficient|VGS(TH)/TJ|ID= 250�A, ref to 25°C|||−5.8||mV/°C| |Drain−to−Source On Resistance|RDS(on)|VGS= 10 V|ID= 50 A||1.25|1.5|m�| |||VGS= 4.5 V|ID= 50 A||1.65|2.3|| |Gate−Resistance|RG|TA= 25°C|||2||�| |**CHARGES & CAPACITANCES**|||||||| |Input Capacitance|CISS|VGS= 0 V, f = 1 MHz, VDS= 25 V|||6660||pF| |Output Capacitance|COSS||||3000||| |Reverse Transfer Capacitance|CRSS||||45||| |Total Gate Charge|QG(TOT)|VGS= 4.5 V, VDS= 30 V, ID= 50 A|||41||nC| |Total Gate Charge|QG(TOT)|VGS= 10 V, VDS= 30 V, ID= 50 A|||91||| |Gate−to−Source Charge|QGS||||17||| |Gate−to−Drain Charge|QGD||||9||| |Plateau Voltage|VGP||||2.9||V| |**SWITCHING CHARACTERISTICS**(Note 3)|||||||| |Turn−On Delay Time|td(ON)|VGS= 10 V, VDS= 48 V,
ID= 50 A, RG= 1�|||14.5||ns| |Rise Time|tr||||55.6||| |Turn−Off Delay Time|td(OFF)||||47.5||| |Fall Time|tf||||14.1||| |**DRAIN−SOURCE DIODE CHARACTERISTICS**|||||||| |Forward Diode Voltage|VSD|VGS= 0 V,
IS= 50 A|TJ= 25°C||0.78|1.2|V| ||||TJ= 125°C||0.66||| |Reverse Recovery Time|tRR|VGS= 0 V, dIS/dt = 100 A/�s,
IS= 50 A|||76||ns| |Reverse Recovery Charge|QRR||||130||nC| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Switching characteristics are independent of operating junction temperatures. **www.onsemi.com** **2** **NTMFSC1D6N06CL** ## **TYPICAL CHARACTERISTICS** **==> picture [242 x 156] intentionally omitted <==** **----- Start of picture text -----**
200
180 VGS = 10 V to 3.4 V
160
3.2 V
140
120 3.0 V
100
80 2.8 V
60
40
20
0
0 0.5 1.0 1.5 2.0 2.5 3.0
, DRAIN CURRENT (A)
ID
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**==> picture [150 x 9] intentionally omitted <==** **----- Start of picture text -----**
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
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**Figure 1. On−Region Characteristics** **==> picture [239 x 157] intentionally omitted <==** **----- Start of picture text -----**
200
180 VDS ≤ 10 V
160
140
120
100
80 T J = 25 ° C
60
40
TJ = 125 ° C
20 T J = −55 ° C
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
, DRAIN CURRENT (A)
ID
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**==> picture [147 x 9] intentionally omitted <==** **----- Start of picture text -----**
VGS, GATE−TO−SOURCE VOLTAGE (V)
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**Figure 2. Transfer Characteristics** **==> picture [489 x 402] intentionally omitted <==** **----- Start of picture text -----**
2.1 2.0
2.0 1.9 T J = 25 ° C
1.8
1.9 T J = 25 ° C 1.7 V GS = 4.5 V
1.8 ID = 50 A 1.6
1.5
1.7 1.4
1.6 1.3 V GS = 10 V
1.2
1.5 1.1
1.0
1.4
0.9
1.3 0.8
0.7
1.2
0.6
1.1 0.5
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10 10 30 50 70 90 110 130 150 170 190
VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and
Voltage Gate Voltage
2.2 1,000,000
2.0
VGS = 10 V
1.8 I D = 40 A 100,000 TJ = 150 ° C
1.6 T J = 125 ° C
10,000
1.4
T J = 85 ° C
1000
1.2
1.0
100
0.8
0.6 10
−50 −25 0 25 50 75 100 125 150 175 5 15 25 35 45 55
TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
) � ) �
, DRAIN−TO−SOURCE RESISTANCE (m , DRAIN−TO−SOURCE RESISTANCE (m
DS(on) DS(on)
R R
, LEAKAGE (nA)
, NORMALIZED DRAIN−TO− SOURCE RESISTANCE IDSS
DS(on)
R
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**Figure 5. On−Resistance Variation with Temperature** **==> picture [187 x 20] intentionally omitted <==** **----- Start of picture text -----**
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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**www.onsemi.com** **3** **NTMFSC1D6N06CL** ## **TYPICAL CHARACTERISTICS** **==> picture [491 x 591] intentionally omitted <==** **----- Start of picture text -----**
10,000 10 30
CISS QT
25
8
1000
COSS
20
6
100 15
4 Q GS Q GD
10 VTJGS = 25 = 0 V ° C CRSS 2 I VTDJ DS = 50 A = 25 = 48 V ° C 105
f = 1 MHz
1 0 0
0 10 20 30 40 50 60 0 10 20 30 40 50 60 70 80 90
VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
VGS = 4.5 V
VDD = 30 V
ID = 50 A td(off)
100 tf
tr 10
t d(on)
10
TJ = 125 ° C TJ = 25 ° C TJ = −55 ° C
1 1
1 10 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
RG, GATE RESISTANCE ( � ) VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current
vs. Gate Resistance
1000 100
100 T J(initial) = 25 ° C
10 � s
10 TC = 25 ° C 10 TJ(initial) = 100 ° C
Single Pulse 0.5 ms
V GS ≤ 10 V 1 ms
1 10 ms
RDS(on) Limit
Thermal Limit
Package Limit
0.1 1
0.1 1 10 100 1000 1E−04 1E−03 1E−02
VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s)
C, CAPACITANCE (pF)
, GATE−TO−SOURCE VOLTAGE (V) , DRAIN−TO−SOURCE VOLTAGE (V)
GS DS
V V
t, TIME (ns)
, SOURCE CURRENT (A)
IS
(A)
IPEAK
, DRAIN CURRENT (A)
ID
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**Figure 11. Safe Operating Area** **Figure 12. IPEAK vs. Time in Avalanche** **www.onsemi.com** **4** **NTMFSC1D6N06CL** ## **TYPICAL CHARACTERISTICS** **==> picture [491 x 173] intentionally omitted <==** **----- Start of picture text -----**
10
1
50% Duty Cycle
20%
10%
0.1
5%
2%
1%
0.01
Single Pulse
0.001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1
PULSE TIME (sec)
C/W)
°
(
JC
�
Z
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**Figure 13. Thermal Characteristics** ## **ORDERING INFORMATION** |**ORDERING INFORMATION**|||| |---|---|---|---| |**Device**|**Device Marking**|**Package**|**Shipping**†| |NTMFSC1D6N06CL|612LDC|DFN8 5x6
(Pb−Free/Halogen Free)|3000 / Tape & Reel| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DUAL COOL is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. **www.onsemi.com** **5** # MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** # **DFN8 5x6.15, 1.27P, DUAL COOL** CASE 506EG ISSUE D **==> picture [81 x 8] intentionally omitted <==** **----- Start of picture text -----**
DATE 25 AUG 2020
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**==> picture [481 x 146] intentionally omitted <==** **----- Start of picture text -----**
GENERIC PLEASE DOWNLOAD THE ON SEMICONDUCTOR
SOLDERING AND MOUNTING TECHNIQUES
MARKING DIAGRAM* REFERENCE MANUAL, SOLDERRM/D .
AYWWZZ
XXXXXX
XXXX = Specific Device Code
ÉÉÉ *This information is generic. Please refer to
A = Assembly Location device data sheet for actual part marking.
ÉÉÉ Y = Year Pb−Free indicator, “G” or microdot “ ”, may
WW = Work Week or may not be present. Some products may
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Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98AON84257G Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DESCRIPTION: DFN8 5x6.15, 1.27P, DUAL COOL PAGE 1 OF 1
**----- End of picture text -----**
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