# Power MOSFET, N Channel, 80 V, 136 A, 3100 µohm, DFN, Surface Mount

![Product image](https://novapart.co/image/farnell:3464010/)

**URL**: https://novapart.co/products/NTMFSC004N08MC/power-mosfet-n-channel-80-v-136-a-3100-ohm-dfn
**SKU**: NTMFSC004N08MC
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.2200
**Stock**: 100+
**Lead Time**: 127 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 127W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | DFN |
| Drain Source Voltage Vds | 80V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 136A |
| Drain Source On State Resistance | 3100µohm |
| Gate Source Threshold Voltage Max | 2.9V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3464010/)

## MOSFET - Power, Single N-Channel, DUAL COOL , DFN8 80 V, 4.0 m 136 A 

## NTMFSC004N08MC 

## **Features** 

## **www.onsemi.com** 

- Advanced Dual−Sided Cooled Packaging 

- Ultra Low RDS(on) to Minimize Conduction Losses 

- MSL1 Robust Packaging Design 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

## **Typical Applications** 

|**VSSS**|**RSS(ON) MAX**|**ID MAX**|
|---|---|---|
|80 V|4.0 m @ 10 V|136 A|
||8.5 m @ 6 V||



**N−Channel MOSFET** 

- Orring FET/Load Switching 

- Synchronous Rectifier 

|S|1||||||||8|D|
|---|---|---|---|---|---|---|---|---|---|---|
||||||||||||
|S|2||||||||7|D|
||||||||||||
||||||||||||
|S|3||||||||6|D|
|G|4||||||||5|D|



- DC−DC Conversion 

**MAXIMUM RATINGS** (TJ = 25 ° C, Unless otherwise specified) 

||||S||3|||||||||6|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**Parameter**<br>**Symbol**|**Value**|**Unit**|S||3|||||||||6|
||||||||||||||||
|Drain−to−Source Voltage<br>VDSS|80|V|G||4|||||||||5|
|Gate−to−Source Voltage<br>VGS|±20|V|||||||||||||
|Continuous Drain<br>ID|136|A|||||||||||||
|Current R JC|||||||||||||||
|(Note 2)<br>Steady<br>State<br>TC= 25°C|||||||||||||||
|Power Dissipation<br>PD|127|W|||||||||||||
|R JC(Note 2)|||||||||||||||
|Continuous Drain<br>ID|86|A|||||||||||||
|Current R JA||||||||||||D|||
|(Note 1, 2)<br>Steady<br>State<br>TA= 25°C|||||Top|||DualCool™56|||||Bottom||
|Power Dissipation<br>R JA(Note 1, 2)<br>PD<br>51<br>W<br>Pulsed Drain Current<br>TA= 25°C, tp= 10 s<br>IDM<br>487<br>A<br>Operating Junction and Storage Temperature<br>Range<br>TJ, Tstg<br>−55 to<br>+150<br>°C<br>~~-—~~|||||**DFN8 5x6.15**<br>**CASE 506EG**<br>**MARKING DIAGRAM**||||||||||
|Source Current (Body Diode)<br>IS|157|A|||||||AWLYW||||||
|Single Pulse Drain−to−Source Avalanche<br>Energy (IAV= 55 A, L = 0.1 mH)<br>EAS<br>178<br>mJ<br>Lead Temperature Soldering Reflow for Sol-<br>dering Purposes (1/8” from case for 10 s)<br>TL<br>300<br>°C<br>Stresses exceeding those listed in the Maximum Ratings table may damage the<br>device. If any of these limits are exceeded, device functionality should not be<br>assumed, damage may occur and reliability may be affected.<br>1. Surface−mounted on FR4 board using 1 in2pad size, 1 oz Cu pad.<br>2. The entire application environment impacts the thermal resistance values shown,<br>~~ee~~ a|||4N08MC= Specific Device Code<br>A<br>= Assembly Location<br>WL<br>= Wafer Lot<br>4N08MC<br>ÉÉÉ<br>ÉÉÉ<br>ÉÉÉ<br>ÉÉÉ||||||||||||
|they are not constants and are only valid for the particular conditions noted.|they are not constants and are only valid for the particular conditions noted.||Y||||= Year||||||||
||||W||||= Work Week||||||||



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. Surface−mounted on FR4 board using 1 in[2] pad size, 1 oz Cu pad. 

2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 

## **ORDERING INFORMATION** 

See detailed ordering and shipping information on page 2 of this data sheet. 

Publication Order Number: **NTMFSC004N08MC/D** 

**1** 

© Semiconductor Components Industries, LLC, 2019 **December, 2019 − Rev. 0** 

**NTMFSC004N08MC** 

## **THERMAL CHARACTERISTICS** 

|**Symbol**|**Parameter**|**Max**|**Unit**|
|---|---|---|---|
|R�JC|Junction−to−Case – Steady State (Note 1)|0.98|°C/W|
|R�JA|Junction−to−Ambient – Steady State (Note 1)|39||



## **ORDERING INFORMATION** 

|**ORDERING INFORMATION**||||
|---|---|---|---|
|**Device**|**Device Marking**|**Package**|**Shipping**†|
|NTMFSC004N08MC|4N08MC|DFN8 5x6.15<br>(Pb−Free/Halogen Free)|3000 / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**|(TJ= 25°C un|less otherwise noted)|less otherwise noted)|||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Conditions**||**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||||
|Drain�to�Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID= 250�A||80|||V|
|Drain�to�Source Breakdown Voltage<br>Temperature Coefficient|V(BR)DSS/ TJ|ID= 250�A, ref to 25°C|||0.05||mV/°C|
|Zero Gate Voltage Drain Current|IDSS|VGS  = 0 V,VDS= 80 V|TJ= 25°C|||10|�A|
||||TJ= 125°C|||250||
|Gate�to�Source Leakage Current|IGSS|VDS= 0 V, VGS=|±20 V|||±100|nA|
|**ON CHARACTERISTICS**(Note 3)||||||||
|Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= 250�A||2.0|2.9|4.0|V|
|Negative Threshold Temperature<br>Coefficient|VGS(TH) / TJ|ID= 250�A, ref to 25°C|||−6.5||mV/°C|
|Drain�to�Source On Resistance|RDS(on)|VGS= 10 V, ID= 44 A|||3.1|4.0|m�|
|||VGS= 6 V, ID= 22 A|||5.0|8.5||
|Gate−Resistance|RG|TA= 25°C|||1.8||�|
|**CHARGES & CAPACITANCES**||||||||
|Input Capacitance|CISS|VGS= 0 V, f = 1 MHz, VDS= 40 V|||2980||pF|
|Output Capacitance|COSS||||950|||
|Reverse Transfer Capacitance|CRSS||||50|||
|Total Gate Charge|QG(TOT)|VGS= 6 V, VDS= 40 V, ID= 22 A|||27.8||nC|
|Total Gate Charge|QG(TOT)|VGS= 10 V, VDS= 40|V, ID= 22 A||43.4|||
|Gate−to−Source Charge|QGS||||15|||
|Gate−to−Drain Charge|QGD||||7|||
|**SWITCHING CHARACTERISTICS**(Note 3)||||||||
|Turn�On Delay Time|td(ON)|VGS= 10 V, VDS=<br>ID= 44 A, RG=|40 V,<br>2.5�||11.7||ns|
|Rise Time|tr||||21.5|||
|Turn�Off Delay Time|td(OFF)||||28.7|||
|Fall Time|tf||||5.4|||
|**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||||
|Forward Diode Voltage|VSD|VGS= 0 V, IS= 44 A|TJ= 25°C||0.83|1.30|V|
||||TJ= 125°C||0.69|||
|Reverse Recovery Time|tRR|VGS= 0 V, dIS/dt = 100 A/�s,<br>IS= 44 A|||44||ns|
|Reverse Recovery Charge|QRR||||50||nC|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Switching characteristics are independent of operating junction temperatures. 

**www.onsemi.com** 

**2** 

**NTMFSC004N08MC** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [487 x 589] intentionally omitted <==**

**----- Start of picture text -----**<br>
300 300<br>TJ=25C VDS=5<br>250 250<br>200 200<br>150 150<br>100 100<br>  VG=5.00<br>  VG=5.50<br>50   VG=6.00 50<br>  VG=7.00   TEMP=−55.00<br>  VG=8.00   TEMP=25.00<br>0   V G =10.00 0   TEMP=150.00<br>0 2 4 6 8 10 0 2 4 6 8 10<br>VDS ,Drain to Source Voltage(V) VGS,Gate to Source Voltage(V)<br>Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics<br>80 35<br>ID =44.7 TJ =25C<br>70 TJ =25C 30<br>60<br>25<br>50<br>20<br>40<br>15<br>30<br>10<br>20<br>  VG =10.00<br>10 5   VG =6.00<br>2 2<br>0 0<br>5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 180<br>VGS,Gate to Source Voltage(V) ID,Drain Current(A)<br>Figure 3. On−Resistance vs. VGS Figure 4. On−Resistance vs. Drain Current and<br>Gate Voltage<br>6 1e−08<br>5.5 ID =44.7<br>VGS [=10V]<br>5<br>V GS =0V<br>4.5 1e−09 f=1e6Hz TJ =25C<br>4<br>3.5<br>3 1e−10<br>2.5<br>2   ciss<br>  coss<br>1.5 1e−11   crss<br>−100 −50 0 50 100 150 0.01 0.1 1 10 100<br>TJ ,Junction Temperature(C) VDS ,Drain to Source Voltage(V)<br>,Drain Current(A) ,Drain Current(A)<br>ID ID<br>Rdson,Drain to Source Resistance(mOhm) Rdson,Drain to Source Resistance(mOhm)<br>C,Capacitance(F)<br>Rdson,Drain to Source Resistance(mOhm)<br>**----- End of picture text -----**<br>


**Figure 5. On−Resistance Variation with Temperature** 

**Figure 6. Capacitance Variation** 

**www.onsemi.com** 

**3** 

**NTMFSC004N08MC** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [242 x 590] intentionally omitted <==**

**----- Start of picture text -----**<br>
12<br>ID=22.4<br>10<br>8<br>6<br>4<br>2   V   V D D= =40.00 30.00<br>  VD=50.00<br>0<br>0 5 10 15 20 25 30 35 40 45 50<br>QG,Gate Charge(nC)<br>Figure 7. Gate−to−Source Voltage vs. Total<br>Charge<br>1e+04<br>VGS =0<br>1000<br>100<br>10<br>2<br>1<br>0.1<br>0.01<br>0.001<br>0.0001<br>  TEMP=150.00<br>1e−05   TEMP=25.00<br>  TEMP=−55.00<br>1e−06<br>0 0.2 0.4 0.6 0.8 1 1.2<br>VSD,Body Diode Forward Voltage(V)<br>Figure 9. Diode Forward Voltage vs. Current<br>1000<br>  temp=25.00<br>  temp=100.00<br>  temp=125.00<br>100<br>10<br>2<br>1<br>0.1<br>1e−06 1e−05 0.0001 0.001<br>tAV ,TIME IN AVALANCHE(s)<br>,Gate to Source Voltage(V)<br>GS<br>V<br>,Reverse Drain Current<br>IS<br>,AVALANCHE CURRENT(A)<br>IAS<br>**----- End of picture text -----**<br>


**Figure 11. IPEAK vs. Time in Avalanche** 

**==> picture [238 x 589] intentionally omitted <==**

**----- Start of picture text -----**<br>
1e−06<br>VGS=10<br>VDS=64.0<br>ID=45<br>1e−07<br>1e−08<br>  tdon<br>  tdoff<br>  tr<br>  tf<br>1e−09<br>1 10 100<br>RG,Gate Resistance(Ohm)<br>Figure 8. Resistive Switching Time Variation<br>vs. Gate Resistance<br>1000<br>100<br>10<br>2<br>1   pulseDuration=10u<br>  pulseDuration=100u<br>  pulseDuration=1m<br>  pulseDuration=10m<br>  pulseDuration=100m<br>0.1<br>0.1 1 10 100<br>VDS ,Drain to Source Voltage(V)<br>Figure 10. Maximum Rated Forward Biased<br>Safe Operating Area<br>120<br>TJ =25C<br>VDS =5V<br>100<br>80<br>60<br>40<br>20<br>0<br>0 5 10 15 20 25 30 35 40 45<br>ID (A)<br>t,TIME(S)<br>,Drain Current(A)<br>ID<br>Gfs(S)<br>**----- End of picture text -----**<br>


**Figure 12. GFS vs. ID** 

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**4** 

**NTMFSC004N08MC** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [485 x 179] intentionally omitted <==**

**----- Start of picture text -----**<br>
140 2<br>D=0 is Single Pulse<br>120 1<br>100<br>80<br>60<br>0.1<br>40   D=0.00<br>  D=0.01<br>  D=0.02<br>20   D=0.05<br>  D=0.10<br>  D=0.20<br>0   D=0.50<br>20 40 60 80 100 120 140 160 0.01<br>TC,Case Temperature(C) 1e−06 1e−05 0.0001 0.001 0.01 0.1 1 10<br>t,Rectangular Pulse Duration(sec)<br>,Drain Current(A)<br>ID<br>r(t),Effective Transient Thermal Resistance<br>**----- End of picture text -----**<br>


**Figure 13. Maximum Current vs. Case Temperature** 

**Figure 14. Thermal Response** 

**www.onsemi.com** 

**5** 

**NTMFSC004N08MC** 

## **PACKAGE DIMENSIONS** 

## **DFN8 5x6.15, 1.27P, DUAL COOL** 

## CASE 506EG ISSUE B 

DUAL COOL is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. 

ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

**LITERATURE FULFILLMENT** : **Email Requests to:** orderlit@onsemi.com 

**ON Semiconductor Website:** www.onsemi.com 

**TECHNICAL SUPPORT North American Technical Support:** Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 

**Europe, Middle East and Africa Technical Support:** Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative 

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**6** 



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