# Power MOSFET, N Channel, 80 V, 89 A, 4500 µohm, DFN, Surface Mount ![Product image](https://novapart.co/image/farnell:2981220RL/) **URL**: https://novapart.co/products/NTMFS6D1N08HT1G/power-mosfet-n-channel-80-v-89-a-4500-ohm-dfn **SKU**: NTMFS6D1N08HT1G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.5530 **Stock**: 1000+ **Lead Time**: 141 days (indicative) ## Description Transistor Polarity:N Channel; Continuous Drain Current Id:89A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0045ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4 ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | Lead (25-Jun-2025) | | No. Of Pins | 5Pins | | Channel Type | N Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 104W | | Transistor Mounting | Surface Mount | | Transistor Polarity | N Channel | | Power Dissipation Pd | 104W | | Rds(On) Test Voltage | 10V | | On Resistance Rds(On) | 0.0045ohm | | Transistor Case Style | DFN | | Drain Source Voltage Vds | 80V | | Operating Temperature Max | 175°C | | Continuous Drain Current Id | 89A | | Drain Source On State Resistance | 4500µohm | | Automotive Qualification Standard | - | | Gate Source Threshold Voltage Max | 4V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2981220RL/) ## NTMFS6D1N08H ## Power MOSFET **80 V, 5.5 m 89 A, Single N−Channel** ## **Features** - Small Footprint (5x6 mm) for Compact Design - Low R to Minimize Conduction Losses DS(on) - Low QG and Capacitance to Minimize Driver Losses - These Devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free and are RoHS Compliant ## **Typical Applications** - Synchronous Rectification - AC−DC and DC−DC Power Supplies ## **www.onsemi.com** **==> picture [191 x 45] intentionally omitted <==** **----- Start of picture text -----**
ee V(BR)DSS RDS(ON) ee MAX ID MAX ee
5.5 m @ 10 V
80 V 89 A
8.0 m @ 6 V
**----- End of picture text -----**
- AC−DC Adapters (USB PD) SR - Load Switch D (5,6) **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) ~~es~~ **Parameter Symbol Value Unit** Drain−to−Source Voltage VDSS 80 V G (4) Gate−to−Source Voltage VGS ± 20 V ~~A Gs ee~~ Continuous Drain TC = 25 ° C ID ~~HH~~ 89 A ~~re~~ S (1,2,3) Current R JC (Note 1) Steady **N−CHANNEL MOSFET** Power Dissipation State PD 104 W R JC (Note 1) ~~feanam~~ Continuous Drain TA = 25 ° C ID 17 A **MARKING** Current R JA **DIAGRAM** (Notes 1, 2) Steady State D Power Dissipation PD 3.8 W 1 S D R JA (Notes 1, 2) **DFN5** S 6D1N08 ~~— |} Lt~~ @& | ~~pf~~ Pulsed Drain Current TA = 25 ° C, tp = 10 s IDM 468 A **CASE 488AA(SO−8FL)** GS AYWZZ D Operating Junction and Storage Temperature TJ, Tstg −55 to ° C **STYLE 1** D Range +175 ~~Fe | tt~~ A = Assembly Location — ~~es~~ Source Current (Body Diode) ~~Gs~~ IS ~~Ge~~ 87 A Y = Year Single Pulse Drain−to−Source Avalanche EAS 465 mJ W = Work Week Energy (IAV = 5.9 A) ZZ = Lot Traceability ~~Fo~~ Lead Temperature Soldering Reflow for SolderTL 300 ° C ing Purposes (1/8 ″ from case for 10 s) ~~Po~~ |Lead Temperature Soldering Reflow for Solder-
ing Purposes (1/8″from case for 10 s)
TLL
300
°C
~~Po~~|Lead Temperature Soldering Reflow for Solder-
ing Purposes (1/8″from case for 10 s)
TLL
300
°C
~~Po~~|Lead Temperature Soldering Reflow for Solder-
ing Purposes (1/8″from case for 10 s)
TLL
300
°C
~~Po~~| |---|---|---| |Stresses exceeding those listed in the Maximum Ratings table may damage the||| |device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
**THERMAL RESISTANCE RATINGS**
**Parameter**
**Symbol**
**Value**
**Unit**
Junction−to−Case − Steady State (Note 1)
R JC
1.44
°C/W
~~es es es ~~||| |Junction−to−Ambient − Steady State (Note 1)
R JA|40|| **ORDERING INFORMATION** **Device Package Shipping** † NTMFS6D1N08HT1G DFN5 1500 / (Pb−Free) Tape & Reel ~~rT 4~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using 1 in[2] pad size, 1 oz. Cu pad. Publication Order Number: **NTMFS6D1N08H/D** **1** © Semiconductor Components Industries, LLC, 2018 **August, 2018 − Rev. 3** ## **NTMFS6D1N08H** **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) |**ELECTRICAL CHARACTERISTICS**(TJ=|25°C unless|otherwise specified)|otherwise specified)||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||||| |Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID=|250�A|80|||V| |Drain−to−Source Breakdown Voltage
Temperature Coefficient|V(BR)DSS/
TJ|ID= 250�A, ref|to 25°C||43.8||mV/°C| |Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,
VDS= 80 V|TJ= 25°C|||10|�A| ||||TJ= 125°C|||100|| |Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS= 20 V||||100|nA| |**ON CHARACTERISTICS**(Note 3)|||||||| |Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= 120�A||2.0||4.0|V| |Threshold Temperature Coefficient|VGS(TH)/TJ|ID= 250�A, ref to 25°C|||−7.08||mV/°C| |Drain−to−Source On Resistance|RDS(on)|VGS= 10 V, ID= 20 A|||4.5|5.5|m�| |||VGS= 6 V, ID= 10 A|||6.4|8.0|| |Forward Transconductance|gFS|VDS= 15 V, ID= 20 A|||80||S| |Gate−Resistance|RG|TA= 25°C|||1.0||�| |**CHARGES & CAPACITANCES**|||||||| |Input Capacitance|CISS|VGS= 0 V, f = 1 MHz, VDS= 40 V|||2085||pF| |Output Capacitance|COSS||||300||| |Reverse Transfer Capacitance|CRSS||||10||| |Total Gate Charge|QG(TOT)|VGS= 6 V, VDS= 40 V, ID= 30 A|||10||nC| |Total Gate Charge|QG(TOT)|VGS= 10 V, VDS= 40 V, ID= 30 A|||32||nC| |Gate−to−Source Charge|QGS||||10||| |Gate−to−Drain Charge|QGD||||6||| |Plateau Voltage|VGP||||5||V| |**SWITCHING CHARACTERISTICS**(Note 3)|||||||| |Turn−On Delay Time|td(ON)|VGS= 10 V, VDS= 64 V,
ID= 30 A, RG= 2.5�|||18||ns| |Rise Time|tr||||50||| |Turn−Off Delay Time|td(OFF)||||48||| |Fall Time|tf||||39||| |**DRAIN−SOURCE DIODE CHARACTERISTICS**|||||||| |Forward Diode Voltage|VSD|VGS= 0 V,
IS= 20 A|TJ= 25°C||0.8|1.2|V| ||||TJ= 125°C||0.7||| |Reverse Recovery Time|tRR|VGS= 0 V, dIS/dt = 100 A/�s,
IS= 20 A|||49||ns| |Reverse Recovery Charge|QRR||||60||nC| |Charge Time|ta|VGS= 0 V, dIS/dt = 100 A/�s,
IS= 20 A|||30||ns| |Discharge Time|tb||||19||ns| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Switching characteristics are independent of operating junction temperatures 4. R � JA is determined with the device mounted on a 1 in[2] pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. R � JC is guaranteed by design while R � CA is determined by the user’s board design. **www.onsemi.com** **2** **NTMFS6D1N08H** - a) 53 ° C/W when mounted on a 1 in[2] pad of 2 oz copper. - b) 125 ° C/W when mounted on a minimum pad of 2 oz copper. 5. Pulse Test: pulse width < 300 s, duty cycle < 2%. wu 6. EAS of 465 mJ is based on started TJ = 25 ° C, IAS = 5.9 A, VDD = 80 V, VGS = 10 V. 100% test at IAS = 8.4 A. 7. As an N−ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. **www.onsemi.com** **3** **NTMFS6D1N08H** ## **TYPICAL CHARACTERISTICS** **==> picture [490 x 619] intentionally omitted <==** **----- Start of picture text -----**
150 100
140130 VGS = 6.5 V to 10 V 5.5 V 90 V DS = 10 V
120 80
6.0 V
110
70
100
90 60
80
5.0 V 50
70
60 40
50
30
40
30 4.5 V 20 T J = 25 ° C
20
10
100 4.0 V 0 TJ = 125 ° C TJ = −55 ° C
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 1 2 3 4 5 6
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
20 0.010
18 TJ = 25 ° C TJ = 25 ° C
16 ID = 20 A 0.008
14 VGS = 6 V
12 0.006
10 VGS = 10 V
8 0.004
6
4 0.002
2
0 0
4 5 6 7 8 9 10 10 15 20 25 30 35 40 45 50
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and
Voltage Gate Voltage
2.5 10K
2.12.3 VI DGS = 20 A = 10 V TJ = 150 ° C
1.9 1K
1.7
1.5 T J = 85 ° C
1.3
100
1.1
0.9
0.7 10 T J = 25 ° C
0.5
0.3
0.1
−0.1 1
−50 −25 0 25 50 75 100 125 150 175 5 15 25 35 45 55 65 75
TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current
Temperature vs. Voltage
, DRAIN CURRENT (A) , DRAIN CURRENT (A)
ID ID
)
� )
�
, DRAIN−TO−SOURCE RESISTANCE (m , DRAIN−TO−SOURCE RESISTANCE (
DS(on) DS(on)
R R
, LEAKAGE (nA)
, NORMALIZED DRAIN−TO− IDSS
SOURCE RESISTANCE
DS(on)
R
**----- End of picture text -----**
**www.onsemi.com** **4** **NTMFS6D1N08H** ## **TYPICAL CHARACTERISTICS** **==> picture [241 x 175] intentionally omitted <==** **----- Start of picture text -----**
10K
CISS
1K
COSS
100
10 C RSS
VGS = 0 V
T J = 25 ° C
f = 1 MHz
1
0 10 20 30 40 50 60
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
**----- End of picture text -----**
**Figure 7. Capacitance Variation** **==> picture [243 x 157] intentionally omitted <==** **----- Start of picture text -----**
1000
V GS = 10 V
VDS = 64 V
I D = 30 A
td(off) tr
100
tf
td(on)
10
1 10 100
t, TIME (ns)
**----- End of picture text -----**
**==> picture [104 x 8] intentionally omitted <==** **----- Start of picture text -----**
RG, GATE RESISTANCE ( � )
**----- End of picture text -----**
**Figure 9. Resistive Switching Time Variation vs. Gate Resistance** **==> picture [232 x 154] intentionally omitted <==** **----- Start of picture text -----**
12
10
8
6 Q GS Q GD
4
VDS = 40 V
2 T J = 25 ° C
ID = 30 A
0
0 5 10 15 20 25 30
, GATE−TO−SOURCE VOLTAGE (V)
GS
V
**----- End of picture text -----**
**==> picture [119 x 9] intentionally omitted <==** **----- Start of picture text -----**
QG, TOTAL GATE CHARGE (nC)
**----- End of picture text -----**
**Figure 8. Gate−to−Source Voltage vs. Total Charge** **==> picture [239 x 173] intentionally omitted <==** **----- Start of picture text -----**
100
VGS = 0 V
10
1
TJ = 125 ° C TJ = 25 ° C TJ = −55 ° C
0.1
0.4 0.5 0.6 0.7 0.8 0.9 1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
, SOURCE CURRENT (A)
IS
**----- End of picture text -----**
**Figure 10. Diode Forward Voltage vs. Current** **==> picture [490 x 174] intentionally omitted <==** **----- Start of picture text -----**
1000 100
TC = 25 ° C
Single Pulse
100 VGS ≤ 10 V TJ(initial) = 25 ° C
10 10
10 � s TJ(initial) = 100 ° C
1
RDS(on) Limit 0.5 ms
Thermal Limit
1 ms
Package Limit
10 ms
0.1 1
0.1 1 10 100 1000 1E−05 1E−04 1E−03 1E−02
VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s)
(A)
IPEAK
, DRAIN CURRENT(A)
ID
**----- End of picture text -----**
**Figure 11. Maximum Rated Forward Biased Safe Operating Area** **Figure 12. IPEAK vs. Time in Avalanche** **www.onsemi.com** **5** **NTMFS6D1N08H** ## **TYPICAL CHARACTERISTICS** **==> picture [489 x 173] intentionally omitted <==** **----- Start of picture text -----**
100
Duty Cycle = 0.5
10 0.2
0.1
0.05
1 0.02
0.01
0.1
Single Pulse
0.01
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
PULSE TIME (sec)
C/W)
°
R(t) (
**----- End of picture text -----**
**Figure 13. Thermal Characteristics** **www.onsemi.com** **6** **NTMFS6D1N08H** ## **PACKAGE DIMENSIONS** **==> picture [470 x 445] intentionally omitted <==** **----- Start of picture text -----**
DFN5 5x6, 1.27P
2 X (SO−8FL) NOTES:
0.20 C CASE 488AA 1. DIMENSIONING AND TOLERANCING PERASME Y14.5M, 1994.
ISSUE N 2. CONTROLLING DIMENSION: MILLIMETER.
D < A a 3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
2 B 2 X BURRS.
D1 MILLIMETERS
0.20 C
DIM MIN NOM MAX
| fe t —= A 0.90 1.00 1.10
A1 0.00 −−− 0.05
E1 4 X b 0.33 0.41 0.51
c 0.23 0.28 0.33
E D 5.00 5.15 5.30
2 D1 4.70 4.90 5.10
c D2 3.80 4.00 4.20
A1 E 6.00 6.15 6.30
E1 5.70 5.90 6.10
1 2 3 4 E2 3.45 3.65 3.85
e 1.27 BSC
TOP VIEW G 0.51 0.575 0.71
C K 1.20 1.35 1.50
SEATING L 0.51 0.575 0.71
0.10 C DETAIL A PLANE L1 0.125 REF
~ | —— M 3.00 3.40 3.80
A 0 −−− 12
0.10 C STYLE 1:
PIN 1. SOURCE
= SIDE VIEW DETAIL A SOLDERING FOOTPRINT*RECOMMENDED === 2. 3. 4. GATESOURCESOURCE
2X 5. DRAIN
8X b 0.495 4.560
0.10 C A B 2X
e/2 1.530
0.05 c
L e
2X
1 4 0.475
T o Fe K SS T 3.200
4.530
E2
(EXPOSED PAD)PIN 5 L1 M 2X 1.330
ae 0.905
1
G D2 0.965
fof i 4X Q n l
BOTTOM VIEW 1.000 1.270
4X 0.750 aaa PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
**----- End of picture text -----**
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