# Power MOSFET, N Channel, 100 V, 132 A, 0.0038 ohm, DFN, Surface Mount ![Product image](https://novapart.co/image/farnell:2473415/) **URL**: https://novapart.co/products/NTMFS6B03NT1G/power-mosfet-n-channel-100-v-132-a-00038-ohm-dfn **SKU**: NTMFS6B03NT1G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €2.1500 **Stock**: 10+ ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 5Pins | | Channel Type | N Channel | | Power Dissipation | 165W | | Transistor Mounting | Surface Mount | | Transistor Polarity | N Channel | | Power Dissipation Pd | 165W | | Rds(On) Test Voltage | 10V | | On Resistance Rds(On) | 0.0038ohm | | Transistor Case Style | DFN | | Drain Source Voltage Vds | 100V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 132A | | Drain Source On State Resistance | 0.0038ohm | | Gate Source Threshold Voltage Max | 4V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2473415/) ## NTMFS6B03N ## Power MOSFET **100 V, 4.8 m 132 A, Single N−Channel** ## **Features** - Small Footprint (5x6 mm) for Compact Design - Low R to Minimize Conduction Losses DS(on) - Low QG and Capacitance to Minimize Driver Losses **www.onsemi.com** - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) **Parameter Symbol Value Unit** ~~es en Gs~~ Drain−to−Source Voltage VDSS 100 V Gate−to−Source Voltage VGS ± 20 V ~~A~~ Continuous Drain TC = 25 ° C ID 132 A Current R(Notes 1, 2, 3)JC Steady TC = 100 ° C 83 Power Dissipation State TC = 25 ° C PD 165 W ~~HF}~~ R JC (Notes 1, 2) TC = 100 ° C 65 Continuous Drain TA = 25 ° C ID 19 A ~~ee~~ Current R(Notes 1, 2, 3)JA Steady TA = 100 ° C 12 Power Dissipation State TA = 25 ° C PD 3.4 W ~~HF}Pe~~ R JA (Notes 1 & 2) ~~UdL Ud~~ TA = 100 ° C ~~Ee~~ 1.4 Pulsed Drain Current TA = 25 ° C, tp = 10 s IDM 470 A ~~es SO~~ Operating Junction and Storage Temperature ~~es Oe~~ TJ, T ~~es~~ stg −55 to ~~es~~ ° C + 150 ~~a~~ Source Current (Body Diode) IS 160 A ~~es es Ge~~ Single Pulse Drain−to−Source Avalanche EAS 180 mJ Energy (IL(pk) = 60 A) ~~Pe~~ Lead Temperature for Soldering Purposes TL 260 ° C (1/8 ″ from case for 10 s) ~~Po~~ Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. **==> picture [174 x 45] intentionally omitted <==** **----- Start of picture text -----**
||||| |---|---|---|---| |V(BR)DSS|RDS(ON) MAX|ID MAX| |100 V|4.8 m|@ 10 V|132 A| |[||_#||| **----- End of picture text -----**
D (5) G (4) S (1,2,3) **N−CHANNEL MOSFET** **==> picture [161 x 135] intentionally omitted <==** **----- Start of picture text -----**
MARKING
DIAGRAM
aa D
1
S D
DFN5 S 6B03N
(SO−8FL) S | AYWZZ
CASE 488AA G D
STYLE 1 D
——
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
**----- End of picture text -----**
## **THERMAL RESISTANCE MAXIMUM RATINGS** **==> picture [277 x 42] intentionally omitted <==** **----- Start of picture text -----**
||||||| |---|---|---|---|---|---| |es|Parameter|Symbol|es ee|Value|Unit| |Junction−to−Case − Steady State|R|JC|0.76|°|C/W| |Junction−to−Ambient − Steady State (Note 2)|R|JA|38| **----- End of picture text -----**
## **ORDERING INFORMATION** See detailed ordering, marking and shipping information on page 5 of this data sheet. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm[2] , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Publication Order Number: **NTMFS6B03N/D** **1** © Semiconductor Components Industries, LLC, 2015 **February, 2015 − Rev. 1** ## **NTMFS6B03N** ## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) |**ELECTRICAL CHARACTERISTICS**(TJ|= 25°C unless|otherwise specified)|otherwise specified)||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||||| |Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID=|250�A|100|||V| |Drain−to−Source Breakdown Voltage
Temperature Coefficient|V(BR)DSS/
TJ||||67.3||mV/°C| |Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,
VDS= 80 V|TJ= 25°C|||10|�A| ||||TJ= 125°C|||100|| |Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS= 20 V||||100|nA| |**ON CHARACTERISTICS**(Note 4)|||||||| |Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID=|250�A|2.0||4.0|V| |Threshold Temperature Coefficient|VGS(TH)/TJ||||−8.1||mV/°C| |Drain−to−Source On Resistance|RDS(on)|VGS= 10 V|ID= 20 A||3.8|4.8|m�| |||VGS= 6.0 V|ID= 10 A||6.0|7.8|| |**CHARGES, CAPACITANCES & GATE RESISTANCE**|||||||| |Input Capacitance|CISS|VGS= 0 V, f = 1 MHz, VDS= 50 V|||4200||pF| |Output Capacitance|COSS||||760||| |Reverse Transfer Capacitance|CRSS||||31||| |Total Gate Charge|QG(TOT)|VGS= 10 V, VDS= 50 V; ID= 50 A|||58||nC| |Threshold Gate Charge|QG(TH)||||6.2||| |Gate−to−Source Charge|QGS||||19||| |Gate−to−Drain Charge|QGD||||17||| |Plateau Voltage|VGP||||5.4||V| |Gate Resistance|RG|TJ= 25°C|||1.0||�| |**SWITCHING CHARACTERISTICS**(Note 5)|||||||| |Turn−On Delay Time|td(ON)|VGS= 10 V, VDS= 50 V,
ID= 50 A, RG= 1.0�|||16||ns| |Rise Time|tr||||46||| |Turn−Off Delay Time|td(OFF)||||29||| |Fall Time|tf||||11||| |**DRAIN−SOURCE DIODE CHARACTERISTICS**|||||||| |Forward Diode Voltage|VSD|VGS= 0 V,
IS= 50 A|TJ= 25°C||0.9|1.2|V| ||||TJ= 125°C||0.8||| |Reverse Recovery Time|tRR|VGS= 0 V, dIS/dt= 100 A/�s,
IS= 25 A|||67||ns| |Charge Time|ta||||35||| |Discharge Time|tb||||31||| |Reverse Recovery Charge|QRR||||120||nC| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width � 300 � s, duty cycle � 2%. 5. Switching characteristics are independent of operating junction temperatures. **www.onsemi.com** **2** **NTMFS6B03N** ## **TYPICAL CHARACTERISTICS** **==> picture [242 x 157] intentionally omitted <==** **----- Start of picture text -----**
140
V GS = 6 V to 10 V
120
5.5 V
100
80
5.0 V
60
40
4.5 V
20
4.0 V
0
0 0.5 1.0 1.5 2.0 2.5 3.0
, DRAIN CURRENT (A)
ID
**----- End of picture text -----**
**==> picture [150 x 9] intentionally omitted <==** **----- Start of picture text -----**
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
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**Figure 1. On−Region Characteristics** **==> picture [237 x 157] intentionally omitted <==** **----- Start of picture text -----**
140
120 V DS ≤ 10 V
100
80
60
40 T J = 125 ° C
20 TJ = 25 ° C
T J = −55 ° C
0
0 1 2 3 4 5 6
, DRAIN CURRENT (A)
ID
**----- End of picture text -----**
VGS, GATE−TO−SOURCE VOLTAGE (V) **Figure 2. Transfer Characteristics** **==> picture [490 x 399] intentionally omitted <==** **----- Start of picture text -----**
11 8.0
10 I D = 20 A 7.5 T J = 25 ° C
T J = 25 ° C 7.0
9
6.5
VGS = 6.0 V
8
6.0
7 5.5
5.0
6
4.5
5
4.0 VGS = 10 V
4
3.5
3 3.0
4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10 10 15 20 25 30 35 40 45 50
VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and
Voltage Gate Voltage
2.2 100K
2.0 I D = 20 A T J = 150 ° C
VGS = 10 V
10K
1.8 TJ = 125 ° C
1.6
1K
1.4
1.2
100
1.0 TJ = 25 ° C
0.8 10
0.6
0.4 1
−50 −25 0 25 50 75 100 125 150 10 20 30 40 50 60 70 80 90 100
TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
) � ) �
, DRAIN−TO−SOURCE RESISTANCE (m , DRAIN−TO−SOURCE RESISTANCE (m
DS(on) DS(on)
R R
, LEAKAGE (nA)
, NORMALIZED DRAIN−TO− IDSS
SOURCE RESISTANCE
DS(on)
R
**----- End of picture text -----**
**Figure 5. On−Resistance Variation with Temperature** **==> picture [187 x 20] intentionally omitted <==** **----- Start of picture text -----**
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
**----- End of picture text -----**
**www.onsemi.com** **3** **NTMFS6B03N** ## **TYPICAL CHARACTERISTICS** **==> picture [244 x 157] intentionally omitted <==** **----- Start of picture text -----**
10,000
Cississ
C oss
1000 Crssrss
100
V GS = 0 V
10 TJJ = 25 25 ° C
f = 1 MHz
1
1 10 100
C, CAPACITANCE (pF)
**----- End of picture text -----**
**==> picture [490 x 595] intentionally omitted <==** **----- Start of picture text -----**
10,000 12
Cississ
C oss 10 QT
1000 Crssrss
8
100 6 Q gs Q gd
V GS = 0 V 4
10 TJJ = 25 25 ° C TJ = 25 ° C
f = 1 MHz 2 V DS = 50 V
ID = 50 A
1 0
1 10 100 0 5 10 15 20 25 30 35 40 45 50 55 60
VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000 200
VI D DS = 50 A = 50 V td(off) 180 T J = 25 ° C
V GS = 10 V 160
140
100 td(on)
tr 120
100
80
10 tf 60
40
20
1 0
1 10 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
RG, GATE RESISTANCE ( � ) VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current
vs. Gate Resistance
1000
VGS ≤ 10 V
Single Pulse
100 TC = 25 ° C
500 � s
10
1 ms
1
10 ms
0.1 RDS(on) Limit
Thermal Limit
Package Limit
0.01
0.1 1 10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
, GATE−TO−SOURCE VOLTAGE (V)
GS
V
t, TIME (ns)
, SOURCE CURRENT (A)
IS
, DRAIN CURRENT (A)
ID
**----- End of picture text -----**
**Figure 11. Maximum Rated Forward Biased Safe Operating Area** **www.onsemi.com** **4** **NTMFS6B03N** ## **TYPICAL CHARACTERISTICS** **==> picture [489 x 382] intentionally omitted <==** **----- Start of picture text -----**
140 100
120
100
25 ° C
80
10
60 100 ° C
40
20
0 1
0 20 40 60 80 100 120 140 100E−6 1E−3 10E−3
ID, DRAIN CURRENT (A) TAV, TIME IN AVALANCHE (sec)
Figure 12. GFS vs. ID Figure 13. IPEAK vs. TAV
100
50% Duty Cycle
20%
10
10%
5%
1 2%
1%
0.1
NTMFS6B03N, 650 mm [2] , 2 oz, Cu Single Layer Pad
0.01 Single Pulse
0.001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
PULSE TIME (sec)
, DRAIN CURRENT (A)
, SMALL−SIGNAL FORWARD
FS IPEAK
G TRANSFER CONDUCTANCE (S)
C/W)
°
R(t) (
**----- End of picture text -----**
**Figure 14. Thermal Response** ## **DEVICE ORDERING INFORMATION** |**Device**|**Marking**|**Package**|**Shipping**†| |---|---|---|---| |NTMFS6B03NT1G|6B03N|DFN5
(Pb−Free)|1500 / Tape & Reel| |NTMFS6B03NT3G|6B03N|DFN5
(Pb−Free)|5000 / Tape & Reel| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. **www.onsemi.com** **5** **NTMFS6B03N** ## **PACKAGE DIMENSIONS** **==> picture [468 x 451] intentionally omitted <==** **----- Start of picture text -----**
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
2 X ISSUE L NOTES:1. DIMENSIONING AND TOLERANCING PER
0.20 C ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
D < A a 3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
2 B 2 X BURRS.
D1 MILLIMETERS
0.20 C
DIM MIN NOM MAX
fet —= A 0.90 1.00 1.10
A1 0.00 −−− 0.05
E1 4 X b 0.33 0.41 0.51
c 0.23 0.28 0.33
E D 5.00 5.15 5.30
2 D1 4.70 4.90 5.10
c D2 3.80 4.00 4.20
A1 E 6.00 6.15 6.30
= ya === E1 5.70 5.90 6.10
1 2 3 4 E2 3.45 3.65 3.85
IT! ist = EEE e 1.27 BSC
TOP VIEW G 0.51 0.61 0.71
3 X C K 1.20 1.35 1.50
0.10 C e SEATINGPLANE L1L 0.51 0.125 REF0.61 0.71
M 3.00 3.40 3.80
A DETAIL A 0 −−− 12
0.10 C RECOMMENDED STYLE 1:
SOLDERING FOOTPRINT* PIN 1. SOURCE
a’ SIDE VIEW et + 2. SOURCE
DETAIL A 2X 3. SOURCE
0.495 4.560 4. GATE
8X b 1.5302X 5. DRAIN
0.10 C A B
0.05 c L e/2
1 4 3.200
K 4.530
E2 2X 1.330
(EXPOSED PAD)PIN 5 L1 M 0.905
1
f o o 4
0.965
G D2 4X
1.000 1.270
BOTTOM VIEW 4X 0.750 PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
**----- End of picture text -----**
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