# Power MOSFET, N Channel, 40 V, 270 A, 850 µohm, DFN, Surface Mount

![Product image](https://novapart.co/image/farnell:2563380RL/)

**URL**: https://novapart.co/products/NTMFS5H409NLT1G/power-mosfet-n-channel-40-v-270-a-850-ohm-dfn
**SKU**: NTMFS5H409NLT1G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.8820
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Channel Type | N Channel |
| Power Dissipation | 140W |
| Drain Source On State Resistance | 850µohm |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2563380RL/)

## NTMFS5H409NL 

## Power MOSFET **40 V, 1.1 m 270 A, Single N−Channel** 

## **Features** 

- Small Footprint (5x6 mm) for Compact Design 

- Low R to Minimize Conduction Losses DS(on) 

- Low QG and Capacitance to Minimize Driver Losses 

**www.onsemi.com** 

- These Devices are Pb−Free and are RoHS Compliant 

|**V(BR)DSS**|**RDS(ON) MAX**|**ID MAX**|
|---|---|---|
|40 V|1.1 m @ 10 V|270 A|
||1.6 m @ 4.5 V||



**MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) 

|**MAXIMUM RATINGS**(TJ = 25J = 25= 25°C unless otherwise noted)|**MAXIMUM RATINGS**(TJ = 25J = 25= 25°C unless otherwise noted)|**MAXIMUM RATINGS**(TJ = 25J = 25= 25°C unless otherwise noted)|C unless otherwise noted)|||
|---|---|---|---|---|---|
|**Parameter**|||**Symbol**|**Value**|**Unit**|
|Drain−to−Source Voltage<br>~~—~~|||VDSS<br>~~—~~|40|V|
|Gate−to−Source Voltage<br>~~i~~|||VGS<br>~~i~~|±20|V|
|Continuous Drain<br>Current R JC<br>(Notes 1, 3)<br>~~i~~<br>~~4~~|Steady<br>State<br>~~i~~|TC= 25°C<br>~~i~~<br>~~ee~~|ID<br>~~i~~<br>~~ee~~|270<br>~~ee~~|A<br>~~ee~~|
|||TC= 100°C<br>~~ee~~||170<br>~~ee~~||
|Power Dissipation<br>R JC(Note 1)<br>~~4~~<br>~~a~~||TC= 25°C<br>~~ee~~|PD<br>~~ee~~|140<br>~~ee~~|W<br>~~ee~~|
|||TC= 100°C<br>~~ee~~||56<br>~~ee~~||
|Continuous Drain<br>Current R JA<br>(Notes 1, 2, 3)<br>~~4 ~~|Steady<br>State<br> <br>~~ee~~|TA= 25°C<br>~~See~~|ID<br>~~See~~|41<br>~~See~~|A<br>~~See~~|
|||TA= 100°C<br> ~~See~~||26<br>~~See~~||
|Power Dissipation<br>R JA(Notes 1 & 2)<br> <br>~~ee~~||TA= 25°C<br> ~~See~~<br>~~ee~~|PD<br>~~See~~<br>~~ee~~|3.2<br>~~See~~<br>~~ee~~|W<br>~~See~~<br>~~ee~~|
|||TA= 100°C<br> ~~See~~<br>~~ee~~<br>~~ee~~||1.3<br>~~See~~<br>~~ee~~||
|Pulsed Drain Current<br>~~es~~<br>~~rl~~|TA= 25°C, tp= 10 s<br>~~es~~<br>~~ee~~<br>~~rl~~||IDM<br>~~es~~<br>~~rl~~|900<br>~~es~~<br>~~rl~~|A<br>~~es~~<br>~~rl~~|
|Operating Junction and Storage Temperature<br>~~ee~~<br>~~rl~~<br>~~ee~~|||TJ, Tstg<br>~~rl~~<br>~~ee~~|−55 to<br>+150<br>~~rl~~<br>~~ee~~|°C<br>~~rl~~|
|Source Current (Body Diode)<br>~~rl~~<br>~~ee~~|||IS<br>~~rl~~<br>~~ee~~|160<br>~~rl~~<br>~~ee~~|A<br>~~rl ~~|
|Single Pulse Drain−to−Source Avalanche<br>Energy (IL(pk)= 45 A)<br>~~ee~~<br>~~a~~<br>~~ee~~|||EAS<br>~~ee~~<br>~~a~~<br>~~ee~~|304<br>~~ee~~<br>~~a~~<br>~~ee~~|mJ<br>~~a~~<br>~~ee~~|
|Lead Temperature for Soldering Purposes<br>(1/8″from case for 10 s)<br>~~ee~~|||TL<br>~~ee~~|260<br>~~ee~~|°C<br>~~ee~~|



**==> picture [160 x 272] intentionally omitted <==**

**----- Start of picture text -----**<br>
D (5)<br>G (4)<br>S (1,2,3)<br>N−CHANNEL MOSFET<br>MARKING<br>DIAGRAM<br>D<br>ke 1<br>S D<br>DFN5 S ) 5H409L :<br>(SO−8FL) S AYWZZ<br>CASE 488AA G D<br>STYLE 1 D<br>5H409L  = Specific Device Code<br>A = Assembly Location<br>Y = Year<br>W = Work Week<br>ZZ = Lot Traceability<br>**----- End of picture text -----**<br>


Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

## **THERMAL RESISTANCE MAXIMUM RATINGS** 

~~es~~ **Parameter Symbol Value Unit** Junction−to−Case − Steady State R JC 0.9 ° C/W Junction−to−Ambient − Steady State (Note 2) R JA 39 

## **ORDERING INFORMATION** 

See detailed ordering, marking and shipping information section on page 5 of this data sheet. 

1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 

2. Surface−mounted on FR4 board using a 650 mm[2] , 2 oz. Cu pad. 

3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. 

Publication Order Number: **NTMFS5H409NL/D** 

**1** 

© Semiconductor Components Industries, LLC, 2016 **March, 2016 − Rev. 0** 

## **NTMFS5H409NL** 

## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) 

|**ELECTRICAL CHARACTERISTICS**(TJ=|25°C unless|otherwise specified)|otherwise specified)|||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||||
|Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID=|250�A|40|||V|
|Drain−to−Source Breakdown Voltage<br>Temperature Coefficient|V(BR)DSS/<br>TJ||||19.1||mV/°C|
|Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,<br>VDS= 40 V|TJ= 25°C|||1.0|�A|
||||TJ= 125°C|||250||
|Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS= 20 V||||100|nA|
|**ON CHARACTERISTICS**(Note 4)||||||||
|Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= 250�A||1.2||2.0|V|
|Threshold Temperature Coefficient|VGS(TH)/TJ||||−4.8||mV/°C|
|Drain−to−Source On Resistance|RDS(on)|VGS= 10 V|ID= 50 A||0.85|1.1|m�|
|||VGS= 4.5 V|ID= 50 A||1.2|1.6||
|Forward Transconductance|gFS|VDS= 15 V, ID= 50 A|||300||S|
|**CHARGES, CAPACITANCES & GATE RESISTANCE**||||||||
|Input Capacitance|CISS|VGS= 0 V, f = 1 MHz, VDS= 20 V|||5700||pF|
|Output Capacitance|COSS||||1400|||
|Reverse Transfer Capacitance|CRSS||||73|||
|Total Gate Charge|QG(TOT)|VGS= 4.5 V, VDS= 20 V; ID= 50 A|||41||nC|
|Total Gate Charge|QG(TOT)|VGS= 10 V, VDS= 20 V; ID= 50 A|||89|||
|Threshold Gate Charge|QG(TH)|VGS= 4.5 V, VDS= 20 V; ID= 50 A|||8.6|||
|Gate−to−Source Charge|QGS||||15|||
|Gate−to−Drain Charge|QGD||||10|||
|Plateau Voltage|VGP||||2.8||V|
|Output Charge|QOSS|VGS= 0 V, VDS= 20 V|||62||nC|
|**SWITCHING CHARACTERISTICS**(Note 5)||||||||
|Turn−On Delay Time|td(ON)|VGS= 4.5 V, VDS= 20 V,<br>ID= 50 A, RG= 2.5�|||17||ns|
|Rise Time|tr||||130|||
|Turn−Off Delay Time|td(OFF)||||40|||
|Fall Time|tf||||14|||
|**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||||
|Forward Diode Voltage|VSD|VGS= 0 V,<br>IS= 50 A|TJ= 25°C||0.79|1.2|V|
||||TJ= 125°C||0.64|||
|Reverse Recovery Time|tRR|VGS= 0 V, dIS/dt = 100 A/�s,<br>IS= 50 A|||59||ns|
|Charge Time|ta||||31|||
|Discharge Time|tb||||28|||
|Reverse Recovery Charge|QRR||||80||nC|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width � 300 � s, duty cycle � 2%. 

5. Switching characteristics are independent of operating junction temperatures. 

**www.onsemi.com** 

**2** 

**NTMFS5H409NL** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [244 x 176] intentionally omitted <==**

**----- Start of picture text -----**<br>
300<br>10 V to<br>4.5 V 3.4 V<br>250 3.6 V<br>3.2 V<br>200<br>3.0 V<br>150<br>100 2.8 V<br>50 2.6 V<br>2.4 V<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


**Figure 1. On−Region Characteristics** 

**==> picture [239 x 175] intentionally omitted <==**

**----- Start of picture text -----**<br>
300<br>275 VDS = 10 V<br>250<br>225<br>200<br>175<br>150<br>125<br>100 T J = 25 ° C<br>75<br>50 TJ = 125 ° C<br>25 TJ = −55 ° C<br>0<br>0 0.5 1 1.5 2 2.5 3 3.5 4<br>VGS, GATE−TO−SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


**Figure 2. Transfer Characteristics** 

**==> picture [491 x 395] intentionally omitted <==**

**----- Start of picture text -----**<br>
5 1.6<br>TJ = 25 ° C TJ = 25 ° C<br>4 ID = 50 A 1.4<br>VGS = 4.5 V<br>1.2<br>3<br>1<br>2 VGS = 10 V<br>0.8<br>1<br>0.6<br>0 0.4<br>3 4 5 6 7 8 9 10 10 60 110 160 210 260<br>VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A)<br>Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and<br>Voltage Gate Voltage<br>1.8 1.E+6<br>VGS = 10 V<br>1.6 ID = 50 A 1.E+5 TJ = 150 ° C<br>1.4 TJ = 125 ° C<br>1.E+4<br>1.2 T J = 85 ° C<br>1.E+3<br>1<br>1.E+2<br>0.8<br>0.6 1.E+1<br>−50 −25 0 25 50 75 100 125 150 5 10 15 20 25 30 35 40<br>TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>) �<br>) �<br>(m<br>, DRAIN−TO−SOURCE RESISTANCE (m , DRAIN−TO−SOURCE RESISTANCE<br>DS(on)<br>R<br>DS(on)<br>R<br>, LEAKAGE (nA)<br>, NORMALIZED DRAIN−TO− IDSS<br>SOURCE RESISTANCE<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**Figure 5. On−Resistance Variation with Temperature** 

**==> picture [187 x 20] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 6. Drain−to−Source Leakage Current<br>vs. Voltage<br>**----- End of picture text -----**<br>


**www.onsemi.com** 

**3** 

**NTMFS5H409NL** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [491 x 384] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.E+4 10<br>CISS 9 VDS = 20 V<br>TJ = 25 ° C<br>C OSS 8 I D  = 50 A<br>7<br>1.E+3<br>6<br>5<br>4<br>1.E+2 CRSS QGS QGD<br>3<br>VGS = 0 V 2<br>TJ = 25 ° C 1<br>f = 1 MHz<br>1.E+1 0<br>0 5 10 15 20 25 30 35 40 0 10 20 30 40 50 60 70 80 90<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)<br>Figure 7. Capacitance Variation Figure 8. Gate−to−Source vs. Total Charge<br>1000 100<br>VGS = 0 V<br>tf TJ = 150 ° C<br>tr TJ = 25 ° C<br>100 10<br>td(off)<br>t d(on)<br>10 1<br>V VGSDD  = 4.5 V = 20 V T J  = −55 ° C<br>ID = 50 A<br>1 0.1<br>1 10 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9<br>RG, GATE RESISTANCE ( � ) VSD, SOURCE−TO−DRAIN VOLTAGE (V)<br>C, CAPACITANCE (pF)<br>, GATE−TO−SOURCE VOLTAGE (V)<br>GS<br>V<br>t, TIME (ns)<br>, SOURCE CURRENT (A)<br>IS<br>**----- End of picture text -----**<br>


**Figure 9. Resistive Switching Time Variation vs. Gate Resistance** 

**Figure 10. Diode Forward Voltage vs. Current** 

**==> picture [489 x 176] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>100<br>1 ms 500  � s<br>T J(initial) = 25 ° C<br>10 ms<br>100 TJ(initial) = 100 ° C<br>10<br>10<br>RDS(on) Limit<br>Thermal Limit<br>Package Limit<br>1 1<br>0.1 1 10 100 100E−6 1E−03 10E−3<br>VDS (V) TIME IN AVALANCHE (s)<br> (A)<br> (A)<br>IDS IPEAK<br>**----- End of picture text -----**<br>


**Figure 11. Safe Operating Area** 

**Figure 12. IPEAK vs. Time in Avalanche** 

**www.onsemi.com** 

**4** 

**NTMFS5H409NL** 

## **DEVICE ORDERING INFORMATION** 

|**Device**|**Marking**|**Package**|**Shipping**†|
|---|---|---|---|
|NTMFS5H409NLT1G|5H409L|DFN5<br>(Pb−Free)|1500 / Tape & Reel|
|NTMFS5H409NLT3G|5H409L|DFN5<br>(Pb−Free)|5000 / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

**www.onsemi.com** 

**5** 

**NTMFS5H409NL** 

## **PACKAGE DIMENSIONS** 

**==> picture [471 x 454] intentionally omitted <==**

**----- Start of picture text -----**<br>
DFN5 5x6, 1.27P<br>(SO−8FL)<br>CASE 488AA<br>ISSUE M<br>2 X NOTES:<br>1. DIMENSIONING AND TOLERANCING PER<br>0.20 C ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETER.<br>D < A i 3. DIMENSION D1 AND E1 DO NOT INCLUDE<br>MOLD FLASH PROTRUSIONS OR GATE<br>2 B 2 X BURRS.<br>D1 MILLIMETERS<br>0.20 C<br>DIM MIN NOM MAX<br>fet == A 0.90 1.00 1.10<br>A1 0.00 −−− 0.05<br>E1 4 X b 0.33 0.41 0.51<br>c 0.23 0.28 0.33<br>E D 5.00 5.15 5.30<br>2 D1 4.70 4.90 5.10<br>c D2 3.80 4.00 4.20<br>A1 E 6.00 6.15 6.30<br>E1 5.70 5.90 6.10<br>1 2 3 4 E2 3.45 3.65 3.85<br>e 1.27 BSC<br>TOP VIEW G 0.51 0.575 0.71<br>C K 1.20 1.35 1.50<br>SEATING L 0.51 0.575 0.71<br>0.10 C DETAIL A PLANE L1 0.125 REF<br>M 3.00 3.40 3.80<br>~. | A —— 0  −−− 12<br>RECOMMENDED<br>0.10 C SOLDERING FOOTPRINT* STYLE 1:<br>PIN 1. SOURCE<br>at SIDE VIEW DETAIL A 0.4952X 4.560 =  2. 3. SOURCESOURCE<br>2X  4. GATE<br>1.530  5. DRAIN<br>8X b<br>0.10 C A B<br>e/2<br>0.05 c<br>s o L e P|<br>3.200<br>1 ES 4 n e 4.530<br>K<br>2X 1.330<br>E2 —— 0.905 _ 4<br>(EXPOSED PAD)PIN 5 L1 M 1<br>0.965<br>4X<br>G D2 1.000 1.270<br>¥ oa n t : 4X “ 0.750 7a988 PITCH<br>BOTTOM VIEW DIMENSIONS: MILLIMETERS<br>*For additional information on our Pb−Free strategy and soldering<br>details, please download the ON Semiconductor Soldering and<br>Mounting Techniques Reference Manual, SOLDERRM/D.<br>**----- End of picture text -----**<br>


ON Semiconductor and the         are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf.  SCILLC reserves the right to make changes without further notice to any products herein.  SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time.  All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.  SCILLC does not convey any license under its patent rights nor the rights of others.  SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.  Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.  SCILLC is an Equal Opportunity/Affirmative Action Employer.  This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

**LITERATURE FULFILLMENT** : **N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Japan Customer Focus Center** For additional information, please contact your local **Email** : orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative 

## **LITERATURE FULFILLMENT** : 

**www.onsemi.com** 

**NTMFS5H409NL/D** 

**6** 



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