# Power MOSFET, N Channel, 40 V, 330 A, 600 µohm, DFN, Surface Mount
**URL**: https://novapart.co/products/NTMFS5H400NLT1G/power-mosfet-n-channel-40-v-330-a-600-ohm-dfn
**SKU**: NTMFS5H400NLT1G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.3400
**Stock**: 10+
## Description
Transistor Polarity:N Channel; Continuous Drain Current Id:330A; Drain Source Voltage Vds:40V; On Resistance Rds(on):600µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 5Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 160W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | DFN |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 330A |
| Drain Source On State Resistance | 600µohm |
| Gate Source Threshold Voltage Max | 2V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2563379/)
**DATA SHEET www.onsemi.com**
## MOSFET – Power, Single, N-Channel 40 V, 0.80 m **�** , 330 A
## NTMFS5H400NL
## **Features**
- Small Footprint (5x6 mm) for Compact Design
- Low R to Minimize Conduction Losses DS(on)
- Low QG and Capacitance to Minimize Driver Losses
- These Devices are Pb−Free and are RoHS Compliant
**MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted)
|**MAXIMUM RATINGS**(TJ= 25°|**MAXIMUM RATINGS**(TJ= 25°|C unless otherw|ise noted)|||
|---|---|---|---|---|---|
|**Parameter**|||**Symbol**|**Value**|**Unit**|
|Drain−to−Source Voltage|||VDSS|40|V|
|Gate−to−Source Voltage|||VGS|±20|V|
|Continuous Drain
Current R�JC
(Notes 1, 3)|Steady
State|TC= 25°C|ID|330|A|
|||TC= 100°C||210||
|Power Dissipation
R�JC(Note 1)||TC= 25°C|PD|160|W|
|||TC= 100°C||66||
|Continuous Drain
Current R�JA
(Notes 1, 2, 3)|Steady
State|TA= 25°C|ID|46|A|
|||TA= 100°C||29||
|Power Dissipation
R�JA(Notes 1 & 2)||TA= 25°C|PD|3.3|W|
|||TA= 100°C||1.3||
|Pulsed Drain Current|TA= 25°C, tp= 10�s||IDM|900|A|
|Operating Junction and Storage Temperature|||TJ, Tstg|−55 to
+ 150|°C|
|Source Current (Body Diode)|||IS|180|A|
|Single Pulse Drain−to−Source Avalanche
Energy (IL(pk)= 49 A)|||EAS|360|mJ|
|Lead Temperature for Soldering Purposes
(1/8″from case for 10 s)|||TL|260|°C|
|**V(BR)DSS**|**RDS(ON) MAX**|**ID MAX**|
|---|---|---|
|40 V|0.80 m�@ 10 V|330 A|
||1.1 m�@ 4.5 V||
**==> picture [192 x 269] intentionally omitted <==**
**----- Start of picture text -----**
D (5)
G (4)
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAM
D
DFN5 (SO−8FL) S D
CASE 506EZ S 5H400L
S AYWZZ
1 G D
D
5H400L = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
**----- End of picture text -----**
## **ORDERING INFORMATION**
See detailed ordering, marking and shipping information on page 5 of this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
## **THERMAL RESISTANCE MAXIMUM RATINGS**
|**Parameter**|**Symbol**|**Value**|**Unit**|
|---|---|---|---|
|Junction−to−Case − Steady State|R�JC|0.76|°C/W|
|Junction−to−Ambient − SteadyState(Note 2)|R�JA|38||
1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm[2] , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle.
Publication Order Number: **NTMFS5H400NL/D**
**1**
© Semiconductor Components Industries, LLC, 2016 **February, 2022 − Rev. 3**
## **NTMFS5H400NL**
**ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified)
|**ELECTRICAL CHARACTERISTICS**(TJ=|25°C unless|otherwise specified)|otherwise specified)|||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||||
|Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID=|250�A|40|||V|
|Drain−to−Source Breakdown Voltage
Temperature Coefficient|V(BR)DSS/
TJ||||11.9||mV/°C|
|Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,
VDS= 40 V|TJ= 25°C|||10|�A|
||||TJ= 125°C|||250||
|Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS= 20 V||||100|nA|
|**ON CHARACTERISTICS**(Note 4)||||||||
|Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= 250�A||1.2||2.0|V|
|Threshold Temperature Coefficient|VGS(TH)/TJ||||−4.8||mV/°C|
|Drain−to−Source On Resistance|RDS(on)|VGS= 10 V|ID= 50 A||0.60|0.80|m�|
|||VGS= 4.5 V|ID= 50 A||0.85|1.1||
|Forward Transconductance|gFS|VDS=15 V, ID= 50 A|||350||S|
|**CHARGES, CAPACITANCES & GATE RESISTANCE**||||||||
|Input Capacitance|CISS|VGS= 0 V, f = 1 MHz, VDS= 20 V|||7700||pF|
|Output Capacitance|COSS||||1800|||
|Reverse Transfer Capacitance|CRSS||||87|||
|Output Charge|QOSS|VGS= 0 V, VDD= 20 V|||80||nC|
|Total Gate Charge|QG(TOT)|VGS= 4.5 V, VDS= 20 V; ID= 50 A|||54||nC|
|Total Gate Charge|QG(TOT)|VGS= 10 V, VDS= 20 V; ID= 50 A|||120|||
|Threshold Gate Charge|QG(TH)|VGS= 4.5 V, VDS= 20 V; ID= 50 A|||11|||
|Gate−to−Source Charge|QGS||||20|||
|Gate−to−Drain Charge|QGD||||13|||
|Plateau Voltage|VGP||||2.7||V|
|**SWITCHING CHARACTERISTICS**(Note 5)||||||||
|Turn−On Delay Time|td(ON)|VGS= 4.5 V, VDS= 20 V,
ID= 50 A, RG= 2.5�|||20||ns|
|Rise Time|tr||||140|||
|Turn−Off Delay Time|td(OFF)||||51|||
|Fall Time|tf||||17|||
|**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||||
|Forward Diode Voltage|VSD|VGS= 0 V,
IS= 50 A|TJ= 25°C||0.76|1.2|V|
||||TJ= 125°C||0.6|||
|Reverse Recovery Time|tRR|VGS= 0 V, dIS/dt = 100 A/�s,
IS= 50 A|||66||ns|
|Charge Time|ta||||35|||
|Discharge Time|tb||||31|||
|Reverse Recovery Charge|QRR||||100||nC|
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width � 300 � s, duty cycle � 2%.
5. Switching characteristics are independent of operating junction temperatures.
**www.onsemi.com**
**2**
**NTMFS5H400NL**
## **TYPICAL CHARACTERISTICS**
**==> picture [245 x 161] intentionally omitted <==**
**----- Start of picture text -----**
300
10 V to 4.5 V
250
3.4 V 3.2 V
3.0 V
200
150
2.8 V
100
50 2.6 V
2.4 V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
, DRAIN CURRENT (A)
ID
**----- End of picture text -----**
**==> picture [150 x 8] intentionally omitted <==**
**----- Start of picture text -----**
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
**----- End of picture text -----**
**Figure 1. On−Region Characteristics**
**==> picture [239 x 159] intentionally omitted <==**
**----- Start of picture text -----**
300
275
250
225
200
175
150
125 TJ = 25 ° C
100
75
50 TJ = 125 ° C
25 TJ = −55 ° C
0
0 0.5 1 1.5 2 2.5 3 3.5 4
, DRAIN CURRENT (A)
ID
**----- End of picture text -----**
**==> picture [147 x 8] intentionally omitted <==**
**----- Start of picture text -----**
VGS, GATE−TO−SOURCE VOLTAGE (V)
**----- End of picture text -----**
**Figure 2. Transfer Characteristics**
**==> picture [491 x 398] intentionally omitted <==**
**----- Start of picture text -----**
5 1.2
TJ = 25 ° C 1.1 T J = 25 ° C
4 ID = 50 A
1
3 0.9 V GS = 4.5 V
0.8
2
0.7
VGS = 10 V
0.6
1
0.5
0 0.4
2 3 4 5 6 7 8 9 10 10 60 110 160 210 260
VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and
Voltage Gate Voltage
1.8 1.E+6
VGS = 10 V
1.6 ID = 50 A
1.E+5 TJ = 150 ° C
1.4
TJ = 125 ° C
1.2 1.E+4
TJ = 85 ° C
1
1.E+3
0.8
0.6 1.E+2
−50 −25 0 25 50 75 100 125 150 5 10 15 20 25 30 35 40
TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
)
� )
, DRAIN−TO−SOURCE RESISTANCE (m �
, DRAIN−TO−SOURCE RESISTANCE (m
DS(on)
R DS(on)
R
, LEAKAGE (nA)
, NORMALIZED DRAIN−TO− IDSS
SOURCE RESISTANCE
DS(on)
R
**----- End of picture text -----**
**Figure 5. On−Resistance Variation with Temperature**
**Figure 6. Drain−to−Source Leakage Current vs. Voltage**
**www.onsemi.com**
**3**
**NTMFS5H400NL**
## **TYPICAL CHARACTERISTICS**
**==> picture [248 x 369] intentionally omitted <==**
**----- Start of picture text -----**
1.E+4
CISS
COSS
1.E+3
1.E+2 CRSS
VGS = 0 V
TJ = 25 ° C
f = 1 MHz
1.E+1
0 5 10 15 20 25 30 35 40
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
1000
tr
100
td(off) tf
td(on)
10
VGS = 4.5 V
VDD = 20 V
ID = 50 A
1
1 10 100
C, CAPACITANCE (pF)
t, TIME (ns)
**----- End of picture text -----**
**==> picture [104 x 8] intentionally omitted <==**
**----- Start of picture text -----**
RG, GATE RESISTANCE ( � )
**----- End of picture text -----**
**Figure 9. Resistive Switching Time Variation vs. Gate Resistance**
**==> picture [247 x 176] intentionally omitted <==**
**----- Start of picture text -----**
1000
1 ms
500 � s
100
10 ms
10
1
RDS(on) Limit
Thermal Limit
Package Limit
0.1
0.1 1 10 100
VDS (V)
(A)
IDS
**----- End of picture text -----**
**Figure 11. Safe Operating Area**
**==> picture [241 x 384] intentionally omitted <==**
**----- Start of picture text -----**
10
9 VDS = 20 V
TJ = 25 ° C
8 ID = 50 A
7
6
5
4
3 QGS QGD
2
1
0
0 20 40 60 80 100 120
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source vs. Total Charge
100
VGS = 0 V
TJ = 150 ° C TJ = 25 ° C
10
TJ = −55 ° C
1
0.1
0.3 0.4 0.5 0.6 0.7 0.8 0.9
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
, GATE−TO−SOURCE VOLTAGE (V)
GS
V
, SOURCE CURRENT (A)
IS
**----- End of picture text -----**
**Figure 10. Diode Forward Voltage vs. Current**
**==> picture [238 x 173] intentionally omitted <==**
**----- Start of picture text -----**
1000
100
TJ(initial) = 25 ° C
T J(initial) = 100 ° C
10
1
100E−3 1E−03 10E−3
TIME IN AVALANCHE (s)
(A)
IPEAK
**----- End of picture text -----**
**Figure 12. IPEAK vs. Time in Avalanche**
**www.onsemi.com**
**4**
**NTMFS5H400NL**
**==> picture [490 x 173] intentionally omitted <==**
**----- Start of picture text -----**
100
50% Duty Cycle
10 20%
10%
5%
1 2% NTMFS5H400NL 650 mm [2] , 2 oz., Cu Single Layer Pad
1%
0.1
Single Pulse
0.01
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
PULSE TIME (sec)
C/W)
°
(t) (
JA
�
R
**----- End of picture text -----**
**Figure 13. Thermal Characteristics**
## **DEVICE ORDERING INFORMATION**
|**Device**|**Marking**|**Package**|**Shipping**†|
|---|---|---|---|
|NTMFS5H400NLT1G|5H400L|DFN5
(Pb−Free)|1500 / Tape & Reel|
|NTMFS5H400NLT3G|5H400L|DFN5
(Pb−Free)|5000 / Tape & Reel|
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
**www.onsemi.com**
**5**
MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS**
**==> picture [481 x 583] intentionally omitted <==**
**----- Start of picture text -----**
DFN5 5x6, 1.27P (SO−8FL)
CASE 506EZ
ISSUE A
1 DATE 25 AUG 2021
SCALE 2:1
D Al NOT ES:
D 1 A 12.. DCON I M ETN ROLLS I ON II NGNG D AIND M EN ST IOO LN: E RAM NIC LL INIMET G P E R SASM E Y14.5M,
3. D I M E NS I ONS D i A ND £1 DO NOT I NCLUD E MOLD F L ASH,
— — PROTRUS IO NS, OR G A T E BURRS.
| | MILLIMETERS
ID N E N T1 IFIE R b o g t ax 0 || pma [oso| min. || NOM.100 || 110Max. ||
L | | ar | ooo | --- | 005 |
Wi c | 6 =| 033 | o41 | ost_|
Z|} L t
ian A t Mi | pd | soo | sis _| 530 |
T OP V IE W D E T AI L A EAB
[SJ o . 10 [c] Fe) fe | 127 BSC
S I D E V IE W PL A N E G 0.51 0.575 | 071
8x b 0.575
amene I 0.125 REF
ooste | mM | 300 | 340 | 380 _|
| oe | o |---|°
4
| ‘ 2X 0.4950 4.56 ie |
Li 2x 1 53-4+-—|
P A CK A G E 2X 0.25‘ I fo H
E e M OU T L I N E \ , 3.20
1 453
P IN 5S {o u | |
XPOS E D P AD ? 2X 0.9 1 1 43
GENERIC
ol ud 0.97 |
MARKING DIAGRAM*
1 1
BO TT OM 1 — L gakt. _. - J
V IE W | , "T d a -
XXXXXX
AYWZZ
4X 1.00 4X. 0.75L | Phi
7 R E COMM E ND E D
XXXXXX = Specific Device Code MOUN TI NG F OO T PR I N T
A = Assembly Location * ® F or addi ti onal i nf orma ti on on our Pk -F ree
Y = Year s t he t ra t ONegySemiconducand soldering t or Solderingde ta ils, pleaseand Moundownload ti ng
W = Work Week Techniques Re f erence Manual, SOLD ER RM/D.
ZZ = Lot Traceability
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ ”,
may or may not be present. Some products
may not follow the Generic Marking.
**----- End of picture text -----**
## **DOCUMENT NUMBER: 98AON24855H**
**DESCRIPTION: DFN5 5x6, 1.27P (SO−8FL)**
Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
**PAGE 1 OF 1**
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.
www.onsemi.com
© Semiconductor Components Industries, LLC, 2018
**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
## **PUBLICATION ORDERING INFORMATION**
**LITERATURE FULFILLMENT** : **TECHNICAL SUPPORT Email Requests to:** orderlit@onsemi.com **North American Technical Support: Europe, Middle East and Africa Technical Support:** Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910 **onsemi Website:** www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative
◊
**==> picture [232 x 43] intentionally omitted <==**
## Links
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- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/on-semiconductor/ntmfs5h400nlt1g/mosfet-n-ch-40v-330a-dfn-5/dp/2563379)
---
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