# Power MOSFET, N Channel, 60 V, 19 A, 3800 µohm, DFN, Surface Mount ![Product image](https://novapart.co/image/farnell:2452047/) **URL**: https://novapart.co/products/NTMFS5C646NLT1G/power-mosfet-n-channel-60-v-19-a-3800-ohm-dfn **SKU**: NTMFS5C646NLT1G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €1.0000 **Stock**: 1000+ **Lead Time**: 701 days (indicative) ## Description Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0038ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Diss ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | Lead (25-Jun-2025) | | No. Of Pins | 5Pins | | Channel Type | N Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 3.1W | | Transistor Mounting | Surface Mount | | Rds(On) Test Voltage | 10V | | Transistor Case Style | DFN | | Drain Source Voltage Vds | 60V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 19A | | Drain Source On State Resistance | 3800µohm | | Gate Source Threshold Voltage Max | 2V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2452047/) NTMFS5C646NL ## Power MOSFET **60 V, 4.7 m 93 A, Single N−Channel** ## **Features** - Small Footprint (5x6 mm) for Compact Design - Low R to Minimize Conduction Losses DS(on) - Low QG and Capacitance to Minimize Driver Losses - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ## **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) **Parameter Symbol Value Unit** Drain−to−Source Voltage VDSS 60 V ~~a~~ Gate−to−Source Voltage VGS ± 20 V Continuous Drain TC = 25 ° C ID 93 A ~~ae~~ Current R(Notes 1, 3)JC Steady TC = 100 ° C 65 Power Dissipation State TC = 25 ° C PD 79 W R JC (Note 1) TC = 100 ° C 40 ~~——e=8a~~ Continuous Drain TA = 25 ° C ID 20 A Current R(Notes 1, 2, 3)JA Steady TA = 100 ° C 14 Power Dissipation State TA = 25 ° C PD 3.7 W R JA (Notes 1 & 2) TA = 100 ° C 1.8 ~~—a=e=8 eee~~ Pulsed Drain Current TA = 25 ° C, tp = 10 s IDM 750 A Operating Junction and Storage Temperature TJ, Tstg −55 to ° C +175 ~~Po~~ Source Current (Body Diode) IS 100 A Single Pulse Drain−to−Source Avalanche EAS 185 mJ Energy (IL(pk) = 5 A) ~~Po~~ Lead Temperature for Soldering Purposes TL 260 ° C (1/8 ″ from case for 10 s) ~~CE~~ Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ## **www.onsemi.com** |**V(BR)DSS**|**RDS(ON) MAX**|**ID MAX**| |---|---|---| |60 V|4.7 m @ 10 V|93 A| ||6.3 m @ 4.5 V|| **==> picture [160 x 267] intentionally omitted <==** **----- Start of picture text -----**
D (5)
G (4)
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAM
D
1
S D
DFN5 S 5C646L ee
(SO−8FL) S AYWZZ
CASE 488AA G D
STYLE 1 D
5C646L = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
**----- End of picture text -----**
## **THERMAL RESISTANCE MAXIMUM RATINGS** **Parameter Symbol Value Unit** Junction−to−Case − Steady State R JC 1.9 ° C/W ~~ee~~ Junction−to−Ambient − Steady State (Note 2) R JA 41 ## **ORDERING INFORMATION** See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm[2] , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Publication Order Number: **NTMFS5C646NL/D** **1** © Semiconductor Components Industries, LLC, 2016 **June, 2016 − Rev. 4** ## **NTMFS5C646NL** ## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) |**ELECTRICAL CHARACTERISTICS**(TJ=|25°C unless|otherwise specified)|otherwise specified)||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||||| |Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID=|250�A|60|||V| |Drain−to−Source Breakdown Voltage
Temperature Coefficient|V(BR)DSS/
TJ||||15.5||mV/°C| |Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,
VDS= 60 V|TJ= 25°C|||10|�A| ||||TJ= 125°C|||250|| |Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS= 20 V||||100|nA| |**ON CHARACTERISTICS**(Note 4)|||||||| |Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= 250�A||1.2||2.0|V| |Threshold Temperature Coefficient|VGS(TH)/TJ||||−4.9||mV/°C| |Drain−to−Source On Resistance|RDS(on)|VGS= 10 V|ID= 50 A||3.8|4.7|m�| |||VGS= 4.5 V|ID= 50 A||5.0|6.3|| |Forward Transconductance|gFS|VDS= 15 V, ID= 50 A|||105||S| |**CHARGES, CAPACITANCES & GATE RESISTANCE**|||||||| |Input Capacitance|CISS|VGS= 0 V, f = 1 MHz, VDS= 25 V|||2164||pF| |Output Capacitance|COSS||||900||| |Reverse Transfer Capacitance|CRSS||||17||| |Total Gate Charge|QG(TOT)|VGS= 4.5 V, VDS= 30 V; ID= 25 A|||15.7||nC| |Total Gate Charge|QG(TOT)|VGS= 10 V, VDS= 30 V; ID= 25 A|||33.7||| |Threshold Gate Charge|QG(TH)|VGS= 4.5 V, VDS= 30 V; ID= 25 A|||1.5||| |Gate−to−Source Charge|QGS||||5.6||| |Gate−to−Drain Charge|QGD||||5.1||| |Plateau Voltage|VGP||||2.8||V| |**SWITCHING CHARACTERISTICS**(Note 5)|||||||| |Turn−On Delay Time|td(ON)|VGS= 4.5 V, VDS= 30 V,
ID= 25 A, RG= 2.5�|||10.4||ns| |Rise Time|tr||||14.9||| |Turn−Off Delay Time|td(OFF)||||23.6||| |Fall Time|tf||||5.1||| |**DRAIN−SOURCE DIODE CHARACTERISTICS**|||||||| |Forward Diode Voltage|VSD|VGS= 0 V,
IS= 50 A|TJ= 25°C||0.88|1.2|V| ||||TJ= 125°C||0.78||| |Reverse Recovery Time|tRR|VGS= 0 V, dIS/dt = 100 A/�s,
IS= 50 A|||40.9||ns| |Charge Time|ta||||20.8||| |Discharge Time|tb||||20.1||| |Reverse Recovery Charge|QRR||||32||nC| 4. Pulse Test: pulse width � 300 � s, duty cycle � 2%. 5. Switching characteristics are independent of operating junction temperatures. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. **www.onsemi.com** **2** **NTMFS5C646NL** ## **TYPICAL CHARACTERISTICS** **==> picture [239 x 156] intentionally omitted <==** **----- Start of picture text -----**
150
140 TJ = 125J = 125 = 125 ° C
130 TJ = 25J = 25 = 25 ° C
120
110 TJ = −55J = −55 = −55 ° C
100
90
80
70
60
50
40
30
20
10
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
, DRAIN CURRENT (A)
IDD
**----- End of picture text -----**
**==> picture [490 x 589] intentionally omitted <==** **----- Start of picture text -----**
140 10 V to 3.8 V 140 TJ = 125J = 125 = 125 ° C
4.5 V 3.6 V 130 TJ = 25J = 25 = 25 ° C
120 120
110 TJ = −55J = −55 = −55 ° C
100 3.4 V 100
90
80 3.2 V 80
70
60 60
3.0 V
50
40 2.8 V 40
30
20 20
10
0 0
0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
7
8 TJ = 25 ° C
T J = 25 ° C
7 ID = 50 A 6
VGS = 4.5 V
6
5
5
VGS = 10 V
4
4
3 3
3 4 5 6 7 8 9 10 10 30 50 70 90 110 130 150
VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and
Voltage Gate Voltage
2.0 100,000
1.8 V GS = 10 V TJ = 125 ° C
I D = 40 A 10,000
1.6
1.4 T J = 85 ° C
1000
1.2
1.0
100
0.8
0.6 10
−50 −25 0 25 50 75 100 125 150 175 5 15 25 35 45 55
TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
, DRAIN CURRENT (A) , DRAIN CURRENT (A)
ID IDD
) � ) �
, DRAIN−TO−SOURCE RESISTANCE (m , DRAIN−TO−SOURCE RESISTANCE (m
DS(on) DS(on)
R R
, LEAKAGE (nA)
, NORMALIZED DRAIN−TO− IDSS
SOURCE RESISTANCE
DS(on)
R
**----- End of picture text -----**
**Figure 5. On−Resistance Variation with Temperature** **==> picture [187 x 20] intentionally omitted <==** **----- Start of picture text -----**
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
**----- End of picture text -----**
**www.onsemi.com** **3** **NTMFS5C646NL** ## **TYPICAL CHARACTERISTICS** **==> picture [491 x 592] intentionally omitted <==** **----- Start of picture text -----**
10,000 10 30
QT
CISS
25
8
1000
20
COSS 6
100 15
4 QGS QGD
V DS = 30 V 10
10 VTJGS = 25 = 0 V ° C CRSS 2 TIDJ = 25 A = 25 ° C 5
f = 1 MHz
1 0 0
0 10 20 30 40 50 60 0 4 8 12 16 20 24 28 32
VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
VGS = 4.5 V
V IDDD = 25 A = 30 V t d(off)
100 t f
tr 10
td(on)
10
1 1 TJ = 125 ° C TJ = 25 ° C TJ = −55 ° C
1 10 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
RG, GATE RESISTANCE ( � ) VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current
vs. Gate Resistance
1000 100
TC = 25 ° C 0.01 ms
VGS ≤ 10 V
100 0.1 ms
TJ(initial) = 25 ° C
1 ms 10
dc 10 ms TJ(initial) = 100 ° C
10
RDS(on) Limit
Thermal Limit
Package Limit
1 1
0.1 1 10 100 1E−04 1E−03 1E−02
VDS (V) TIME IN AVALANCHE (s)
C, CAPACITANCE (pF)
, GATE−TO−SOURCE VOLTAGE (V) , DRAIN−TO−SOURCE VOLTAGE (V)
GS DS
V V
t, TIME (ns)
, SOURCE CURRENT (A)
IS
(A)
(A)
ID
IPEAK
**----- End of picture text -----**
**Figure 11. Safe Operating Area** **Figure 12. IPEAK vs. Time in Avalanche** **www.onsemi.com** **4** **NTMFS5C646NL** **==> picture [490 x 173] intentionally omitted <==** **----- Start of picture text -----**
100
50% Duty Cycle
20%
10
10%
5%
2%
1 NTMFS5C646NL 650 mm [2] , 2 oz., Cu Single Layer Pad
1%
0.1
Single Pulse
0.01
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
PULSE TIME (sec)
C/W)
°
(t) (
JA
�
R
**----- End of picture text -----**
**Figure 13. Thermal Characteristics** ## **DEVICE ORDERING INFORMATION** |**Device**|**Marking**|**Package**|**Shipping**†| |---|---|---|---| |NTMFS5C646NLT1G|5C646L|DFN5
(Pb−Free)|1500 / Tape & Reel| |NTMFS5C646NLT3G|5C646L|DFN5
(Pb−Free)|5000 / Tape & Reel| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. **www.onsemi.com** **5** **NTMFS5C646NL** ## **PACKAGE DIMENSIONS** **==> picture [471 x 454] intentionally omitted <==** **----- Start of picture text -----**
DFN5 5x6, 1.27P
2 X (SO−8FL) NOTES:1. DIMENSIONING AND TOLERANCING PER
0.20 C CASE 488AA ASME Y14.5M, 1994.
D < A a ISSUE M 2.3. CONTROLLING DIMENSION: MILLIMETER.DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
2 B 2 X BURRS.
D1 MILLIMETERS
0.20 C
DIM MIN NOM MAX
——— A 0.90 1.00 1.10
A1 0.00 −−− 0.05
E1 4 X b 0.33 0.41 0.51
c 0.23 0.28 0.33
E D 5.00 5.15 5.30
2 D1 4.70 4.90 5.10
c D2 3.80 4.00 4.20
A1 E 6.00 6.15 6.30
E1 5.70 5.90 6.10
1 2 3 4 E2 3.45 3.65 3.85
e 1.27 BSC
TOP VIEW G 0.51 0.575 0.71
C K 1.20 1.35 1.50
SEATING L 0.51 0.575 0.71
0.10 C DETAIL A PLANE L1 0.125 REF
~ | ——— M 3.00 3.40 3.80
A 0 −−− 12
0.10 C STYLE 1:
PIN 1. SOURCE
= SIDE VIEW a 2. SOURCE
DETAIL A RECOMMENDED 3. 4. GATESOURCE
SOLDERING FOOTPRINT* 5. DRAIN
8X b 2X
0.10 C A B 0.495 4.560
e/2
2X
0.05 c
L e 1.530
S o r1 1 aes 4 _—
K
3.200
4.530
E2
PIN 5 M
(EXPOSED PAD) L1
on r 2X o 1.330 |
0.905
G D2 1
BOTTOM VIEW 0.965
F L lt 9 4X 6 0 g
1.000 1.270
4X 0.750 ‘ og PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
**----- End of picture text -----**
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