# Power MOSFET, N Channel, 60 V, 230 A, 1400 µohm, DFN, Surface Mount ![Product image](https://novapart.co/image/farnell:3588873/) **URL**: https://novapart.co/products/NTMFS5C612NT1G-TE/power-mosfet-n-channel-60-v-230-a-1400-ohm-dfn **SKU**: NTMFS5C612NT1G-TE **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €2.8400 **Stock**: 500+ **Lead Time**: 2 days (indicative) ## Description Available until stocks are exhausted Alternative available ## Specifications | Parameter | Value | |---|---| | Msl | - | | Svhc | No SVHC (15-Jan-2018) | | No. Of Pins | 5Pins | | Channel Type | N Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 170W | | Transistor Mounting | Surface Mount | | Rds(On) Test Voltage | 10V | | Transistor Case Style | DFN | | Drain Source Voltage Vds | 60V | | Operating Temperature Max | 175°C | | Continuous Drain Current Id | 230A | | Drain Source On State Resistance | 1400µohm | | Gate Source Threshold Voltage Max | 4V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3588873/) ## NTMFS5C612N MOSFET – Power, Single, N-Channel ~~——~~ 60 V, 1.6 m 230 A ## **Features** - Small Footprint (5x6 mm) for Compact Design - Low R to Minimize Conduction Losses DS(on) - Low QG and Capacitance to Minimize Driver Losses - These Devices are Pb−Free and are RoHS Compliant ## **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) |@|@|@| |---|---|---| |**www.**
**onsemi.com**||| |||| |**V(BR)DSS**|**RDS(ON) MAX**|**ID MAX**| |60 V|1.6 m @ 10 V|230 A| **Parameter Symbol Value Unit** ~~eses es~~ Drain−to−Source Voltage VDSS 60 V D (5) Gate−to−Source Voltage VGS ± 20 V ~~ee~~ Continuous Drain TC = 25 ° C ID 230 A Current R(Notes 1, 3)JC Steady TC = 100 ° C 160 Power Dissipation State TC = 25 ° C PD 170 W G (4) R JC (Note 1) TC = 100 ° C 84 S (1,2,3) Continuous Drain TA = 25 ° C ID 35 A Current R(Notes 1, 2, 3)JA Steady TA = 100 ° C 25 **N−CHANNEL MOSFET** Power Dissipation State ~~|~~ TA = 25 ° C PD ~~||~~ 3.8 W R JA (Notes 1, 2) TA = 100 ° C 1.9 **MARKINGDIAGRAM** ~~Ere~~ Pulsed Drain Current TA = 25 ° C, tp = 10 s IDM 900 A ~~e~~ 1 D Operating Junction and Storage Temperature TJ, Tstg −55 to ° C S D +175 **DFN5** S 5C612N **(SO−8FL)** S AYWZZ ~~ne~~ Source Current (Body Diode) IS 190 A **CASE 488AA** G | D Single Pulse Drain−to−Source Avalanche EAS 451 mJ **STYLE 1** D Energy (IL(pk) = 17 A) 5C612N = Specific Device Code ~~eo~~ Lead Temperature for Soldering Purposes TL 260 ° C A = Assembly Location (1/8 ″ from case for 10 s) Y = Year ~~eC~~ W = Work Week Stresses exceeding those listed in the Maximum Ratings table may damage the ZZ = Lot Traceability device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ## **THERMAL RESISTANCE MAXIMUM RATINGS** ||~~ee~~|~~ee~~|| |---|---|---|---| |**Parameter**
~~es~~|**Symbol**
~~es~~
~~ee~~|**Value**
~~es~~
~~ee~~|**Unit**
~~es~~| |Junction−to−Case − Steady State|R JC
~~ee ~~|0.9
~~ee~~|°C/W| |Junction−to−Ambient − Steady State (Note 2)|R JA|39|| ## **ORDERING INFORMATION** See detailed ordering, marking and shipping information on page 5 of this data sheet. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm[2] , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Publication Order Number: **NTMFS5C612N/D** **1** © Semiconductor Components Industries, LLC, 2016 **May, 2019 − Rev. 2** ## **NTMFS5C612N** ## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) |**ELECTRICAL CHARACTERISTICS**(TJ=|25°C unless|otherwise specified)|otherwise specified)||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||||| |Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID=|250�A|60|||V| |Drain−to−Source Breakdown Voltage
Temperature Coefficient|V(BR)DSS/
TJ||||12.8||mV/°C| |Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,
VDS= 60 V|TJ= 25°C|||10|�A| ||||TJ= 125°C|||250|| |Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS= 20 V||||100|nA| |**ON CHARACTERISTICS**(Note 4)|||||||| |Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID=|250�A|2.0||4.0|V| |Threshold Temperature Coefficient|VGS(TH)/TJ||||−9.4||mV/°C| |Drain−to−Source On Resistance|RDS(on)|VGS= 10 V|ID= 50 A||1.4|1.6|m�| |**CHARGES, CAPACITANCES & GATE RESISTANCE**|||||||| |Input Capacitance|CISS|VGS= 0 V, f = 1 MHz, VDS= 25 V|||4830||pF| |Output Capacitance|COSS||||3180||| |Reverse Transfer Capacitance|CRSS||||22||| |Total Gate Charge|QG(TOT)|VGS= 10 V, VDS= 48 V; ID= 50 A|||60.2||nC| |Threshold Gate Charge|QG(TH)||||14.2||| |Gate−to−Source Charge|QGS||||23.3||| |Gate−to−Drain Charge|QGD||||6.3||| |Plateau Voltage|VGP||||4.9||V| |**SWITCHING CHARACTERISTICS**(Note 5)|||||||| |Turn−On Delay Time|td(ON)|VGS= 10 V, VDS= 48 V,
ID= 50 A, RG= 2.5�|||14.2||ns| |Rise Time|tr||||46.9||| |Turn−Off Delay Time|td(OFF)||||38.9||| |Fall Time|tf||||11.9||| |**DRAIN−SOURCE DIODE CHARACTERISTICS**|||||||| |Forward Diode Voltage|VSD|VGS= 0 V,
IS= 50 A|TJ= 25°C||0.81|1.0|V| ||||TJ= 125°C||0.67||| |Reverse Recovery Time|tRR|VGS= 0 V, dIS/dt = 100 A/�s,
IS= 50 A|||82.4||ns| |Charge Time|ta||||40.8||| |Discharge Time|tb||||41.6||| |Reverse Recovery Charge|QRR||||139||nC| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width � 300 � s, duty cycle � 2%. 5. Switching characteristics are independent of operating junction temperatures. **www.onsemi.com** **2** **NTMFS5C612N** ## **TYPICAL CHARACTERISTICS** **==> picture [490 x 592] intentionally omitted <==** **----- Start of picture text -----**
250 250
VGS = 10 V to 6.0 V
225 225 VDS = 10 V
200 5.0 V 200
175 175
150 150
125 125
100 4.5 V 100 TJ = 125 ° C
75 75 TJ = 25 ° C
50 50 TJ = −55 ° C
25 25
0 0
0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
6 8
5 TJ = 25 ° C 7 TJ = 25 ° C
ID = 50 A
6
4 5 V GS = 6 V
3 4
3
2
2
VGS = 10 V
1
1
0 0
4 5 6 7 8 9 10 5 10 15 20 25 30 35 40 45 50
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and
Voltage Gate Voltage
1.9 100,000
V GS = 10 V TJ = 150 ° C
1.7 ID = 50 A
TJ = 125 ° C
1.5 10,000
1.3
TJ = 85 ° C
1.1 1000
0.9
0.7 100
−50 −25 0 25 50 75 100 125 150 5 15 25 35 45 55
TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
, DRAIN CURRENT (A) , DRAIN CURRENT (A)
ID ID
) � ) �
, DRAIN−TO−SOURCE RESISTANCE (m , DRAIN−TO−SOURCE RESISTANCE (m
DS(on) DS(on)
R R
, LEAKAGE (nA)
, NORMALIZED DRAIN−TO− SOURCE RESISTANCE IDSS
DS(on)
R
**----- End of picture text -----**
**Figure 5. On−Resistance Variation with Temperature** **==> picture [187 x 20] intentionally omitted <==** **----- Start of picture text -----**
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
**----- End of picture text -----**
**www.onsemi.com** **3** **NTMFS5C612N** ## **TYPICAL CHARACTERISTICS** **==> picture [241 x 173] intentionally omitted <==** **----- Start of picture text -----**
10,000
CISS
1000 COSS
100
C RSS
10
VGS = 0 V
TJ = 25 ° C
f = 1 MHz
1
0 10 20 30 40 50 60
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
**----- End of picture text -----**
**Figure 7. Capacitance Variation** **==> picture [243 x 156] intentionally omitted <==** **----- Start of picture text -----**
1000
VGS = 10 V
VDS = 48 V
I D = 50 A
td(off)
tr
100
tf
t d(on)
10
1 10 100
t, TIME (ns)
**----- End of picture text -----**
**==> picture [104 x 8] intentionally omitted <==** **----- Start of picture text -----**
RG, GATE RESISTANCE ( � )
**----- End of picture text -----**
**Figure 9. Resistive Switching Time Variation vs. Gate Resistance** **==> picture [238 x 382] intentionally omitted <==** **----- Start of picture text -----**
10
9 VTJ DS = 25 = 48 V ° C
8 I D = 50 A
7
6 Q GS Q GD
5
4
3
2
1
0
0 10 20 30 40 50 60
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
100
10
T J = 125 ° C T J = 25 ° C T J = −55 ° C
1
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
, GATE−TO−SOURCE VOLTAGE (V)
GS
V
, SOURCE CURRENT (A)
IS
**----- End of picture text -----**
**Figure 10. Diode Forward Voltage vs. Current** **==> picture [489 x 173] intentionally omitted <==** **----- Start of picture text -----**
1000 100
10 � s
100 T J(initial) = 25 ° C
10 TC = 25 ° C 10 TJ(initial) = 100 ° C
Single Pulse
0.5 ms
VGS ≤ 10 V 1 ms
1
RDS(on) Limit 10 ms
Thermal Limit
Package Limit
0.1 1
0.1 1 10 100 1000 1E−04 1E−03 1E−02
VDS (V) TIME IN AVALANCHE (s)
(A)
(A)
IDS IPEAK
**----- End of picture text -----**
**Figure 11. Safe Operating Area** **Figure 12. IPEAK vs. Time in Avalanche** **www.onsemi.com** **4** **NTMFS5C612N** ## **TYPICAL CHARACTERISTICS** **==> picture [490 x 173] intentionally omitted <==** **----- Start of picture text -----**
100
50% Duty Cycle
10 20%
10%
5%
2%
1 NVMFS5C612NL 650 mm [2] , 2 oz., Cu Single Layer Pad
1%
0.1
Single Pulse
0.01
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
PULSE TIME (sec)
C/W)
°
R(t) (
**----- End of picture text -----**
**Figure 13. Thermal Characteristics** ## **DEVICE ORDERING INFORMATION** |**Device**|**Marking**|**Package**|**Shipping**†| |---|---|---|---| |NTMFS5C612NT1G|5C612N|DFN5
(Pb−Free)|1500 / Tape & Reel| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. **www.onsemi.com** **5** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [482 x 619] intentionally omitted <==** **----- Start of picture text -----**
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
+
1 ISSUE N
SCALE 2:1 DATE 25 JUN 2018
2 X NOTES:
1. DIMENSIONING AND TOLERANCING PER
0.20 C ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
D = A o 3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
2 B 2 X BURRS.
D1 MILLIMETERS
0.20 C
DIM MIN NOM MAX
fet = A 0.90 1.00 1.10
A1 0.00 −−− 0.05
E1 4 X b 0.33 0.41 0.51
c 0.23 0.28 0.33
E D 5.00 5.15 5.30
2 D1 4.70 4.90 5.10
c D2 3.80 4.00 4.20
A1 E 6.00 6.15 6.30
E1 5.70 5.90 6.10
1 2 3 4 E2 3.45 3.65 3.85
e 1.27 BSC
TOP VIEW G 0.51 0.575 0.71
C K 1.20 1.35 1.50
SEATING L 0.51 0.575 0.71
0.10 C DETAIL A PLANE L1 0.125 REF
M 3.00 3.40 3.80
~. | A —— 0 −−− 12
0.10 C GENERIC
Sy SIDE VIEW SS MARKING DIAGRAM*
DETAIL A
1
8X b XXXXXX
0.10 C A B e/2 AYWZZ
0.05 c
L e
1 4 XXXXXX = Specific Device Code
P o {IF S
K A = Assembly Location
Y = Year
RECOMMENDED W = Work Week
E2 SOLDERING FOOTPRINT* ZZ = Lot Traceability
(EXPOSED PAD)PIN 5 L1 M 0.4952X 4.560 *This information is generic. Please refer to
2X device data sheet for actual part marking.
a
1.530 Pb−Free indicator, “G” or microdot “ ”,
G = D2 2X may not follow the Generic Marking.may or may not be present. Some products
BOTTOM VIEW 0.475
an 7a 3.200 |
4.530
| |
STYLE 1: STYLE 2: 2X 1.330
PIN 1. 2. SOURCESOURCE PIN 1. 2. ANODEANODE 0.905
3. SOURCE 3. ANODE 1
4. GATE 4. NO CONNECT
5. DRAIN 5. CATHODE 0.965
“ 4X g o l a
1.000 1.270
4X 0.750 one PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98AON14036D Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DESCRIPTION: DFN5 5x6, 1.27P (SO−8FL) PAGE 1 OF 1
**----- End of picture text -----**
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