# Power MOSFET, N Channel, 60 V, 61 A, 0.0102 ohm, DFN, Surface Mount
**URL**: https://novapart.co/products/NTMFS5844NLT1G/power-mosfet-n-channel-60-v-61-a-00102-ohm-dfn
**SKU**: NTMFS5844NLT1G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.6500
**Stock**: 1000+
**Lead Time**: 2 days (indicative)
## Description
Transistor Polarity:N Channel; Continuous Drain Current Id:61A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0102ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.3V; Power
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (17-Jan-2022) |
| No. Of Pins | 5Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 107W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | DFN |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 61A |
| Drain Source On State Resistance | 0.0102ohm |
| Gate Source Threshold Voltage Max | 2.3V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2724418/)
## NTMFS5844NL, NVMFS5844NL MOSFET – Power, Single, N-Channel ~~—~~ 60 V, 61 A, 12 m
## **Features**
- Small Footprint (5x6 mm) for Compact Design
## **http://onsemi.com**
- Low R to Minimize Conduction Losses DS(on)
- Low QG and Capacitance to Minimize Driver Losses
|• Low RDS(on)to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver LossesG and Capacitance to Minimize Driver Lossesand Capacitance to Minimize Driver Losses|||
|---|---|---|
|• Low QG and Capacitance to Minimize Driver LossesG and Capacitance to Minimize Driver Lossesand Capacitance to Minimize Driver Losses||**V(BR)DSS**
**RDS(ON) MAX**
**ID MAX**|
|• NVMFS5844NLWF − Wettable Flanks Product
• NVMFS Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101||60 V
12 m @ 10 V
61 A
16 m @ 4.5 V
~~a ee~~|
|Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
**MAXIMUM RATINGS**(TJ= 25°C unless otherwise noted)
**Parameter**
**Symbol**
**Value**
**Unit**
Drain−to−Source Voltage
VDSS
60
V
Gate−to−Source Voltage
VGS
20
V
Continuous Drain Cur-
rent R
J−mb(Notes 1,
2, 3, 4)
Steady
State
Tmb= 25°C
ID
61
A
Tmb= 100°C
43
Power Dissipation
R
J−mb(Notes 1, 2, 3)
Tmb= 25°C
PD
107
W
Tmb= 100°C
54
Continuous Drain Cur-
rent R JA(Notes 1, 3,
4)
Steady
State
TA= 25°C
ID
11.2
A
TA= 100°C
8.0
Power Dissipation
R JA(Notes 1 & 3)
TA= 25°C
PD
3.7
W
TA= 100°C
1.8
Pulsed Drain Current
TA= 25°C, tp= 10 s
IDM
247
A
Current Limited by Package
(Note 4)
TA= 25°C
IDmaxPkg
80
A
Operating Junction and Storage Temperature
TJ, Tstg
−55 to
175
°C
Source Current (Body Diode)
IS
60
A
Single Pulse Drain−to−Source Avalanche
Energy (TJ= 25°C, VDD= 50 V, VGS= 10 V,
IL(pk)= 31 A, L = 0.1 mH, RG= 25 )
EAS
48
mJ
Lead Temperature for Soldering Purposes
(1/8″from case for 10 s)
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
~~ee~~
~~———~~
~~J =a~~
~~J~~
~~ee~~
~~a~~
~~ee~~
~~es~~
~~ee ~~~~**e**e ee~~
~~a~~
~~e~~
~~es~~
~~po~~
~~|~~
~~ee~~
~~ee eee~~||**DFN5**
**(SO−8FL)**
**CASE 488AA**
**STYLE 1**
**MARKING**
**DIAGRAM**
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
1
G (4)
S (1,2,3)
**N−CHANNEL MOSFET**
D (5)
XXXXXX
AYWZZ
S
S
S
G
D
D
D
D
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
**ORDERING INFORMATION**
~~re~~
=>
_
:|
|Ratings are stress ratings only. Functional operation above the Recommended|||
|Operating Conditions is not implied. Extended exposure to stresses above the|||
|Recommended Operating Conditions may affect device reliability.|||
## **THERMAL RESISTANCE MAXIMUM RATINGS**
|**Parameter**
~~a~~|**Symbol**
~~a~~|**Value**
~~a~~|**Unit**
~~a~~|
|---|---|---|---|
|Junction−to−Mounting Board (top) − Steady
State (Notes 2, 3)|R
J−mb|1.4|°C/W|
|Junction−to−Ambient − SteadyState(Note 3)|R JA|41||
1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.
2. Psi ( ) is used as required per JESD51−12 for packages in which substantially less than 100% of the heat flows to single case surface.
Publication Order Number: **NTMFS5844NL/D**
**1**
© Semiconductor Components Industries, LLC, 2013 **May, 2019 − Rev. 5**
## **NTMFS5844NL, NVMFS5844NL**
3. Surface−mounted on FR4 board using a 650 mm[2] , 2 oz. Cu pad.
4. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle.
- **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified)
|**ELECTRICAL CHARACTERISTICS**(TJ=|25°C unless|otherwise specified)|otherwise specified)|||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||||
|Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID=|250�A|60|||V|
|Drain−to−Source Breakdown Voltage
Temperature Coefficient|V(BR)DSS/
TJ||||57||mV/°C|
|Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,
VDS= 60 V|TJ= 25°C|||1|�A|
||||TJ= 125°C|||100||
|Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS|=±20 V|||±100|nA|
|**ON CHARACTERISTICS**(Note 5)||||||||
|Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID=|250�A|1.5||2.3|V|
|Negative Threshold Temperature Coefficient|VGS(TH)/TJ||||6.2||mV/°C|
|Drain−to−Source On Resistance|RDS(on)|VGS= 10 V|ID= 10 A||10.2|12|m�|
|||VGS= 4.5 V|ID= 10 A||13|16||
|Forward Transconductance|gFS|VDS= 5 V, ID|= 10 A||27||S|
|**CHARGES, CAPACITANCES & GATE RESISTANCE**||||||||
|Input Capacitance|CISS|VGS= 0 V, f = 1 MHz, VDS= 25 V|||1460||pF|
|Output Capacitance|COSS||||150|||
|Reverse Transfer Capacitance|CRSS||||96|||
|Total Gate Charge|QG(TOT)|VGS= 10 V, VDS= 48 V; ID= 10 A|||30||nC|
|Total Gate Charge|QG(TOT)|VGS= 4.5 V, VDS= 48 V; ID= 10 A|||15|||
|Threshold Gate Charge|QG(TH)||||1.0|||
|Gate−to−Source Charge|QGS||||4.0|||
|Gate−to−Drain Charge|QGD||||8.0|||
|Plateau Voltage|VGP||||3.0||V|
|Gate Resistance|RG||||0.62||�|
|**SWITCHING CHARACTERISTICS**(Note 6)||||||||
|Turn−On Delay Time|td(ON)|VGS= 4.5 V, VDS= 48 V,
ID= 10 A, RG= 2.5�|||12||ns|
|Rise Time|tr||||25|||
|Turn−Off Delay Time|td(OFF)||||20|||
|Fall Time|tf||||10|||
|**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||||
|Forward Diode Voltage|VSD|VGS= 0 V,
IS= 10 A|TJ= 25°C||0.79|1.2|V|
||||TJ= 125°C||0.65|||
|Reverse Recovery Time|tRR|VGS= 0 V, dIS/dt = 100 A/�s,
IS= 10 A|||19||ns|
|Charge Time|ta||||13|||
|Discharge Time|tb||||6.0|||
|Reverse Recovery Charge|QRR||||15||nC|
5. Pulse Test: pulse width � 300 � s, duty cycle � 2%.
6. Switching characteristics are independent of operating junction temperatures.
**http://onsemi.com**
**2**
**NTMFS5844NL, NVMFS5844NL**
## **TYPICAL CHARACTERISTICS**
**==> picture [493 x 626] intentionally omitted <==**
**----- Start of picture text -----**
80 80
70 10 V VGS = 5 V 4.0 V T J = 25 ° C 70 VDS ≥ 10 V
60 3.8 V 60
50 50
3.6 V
40 40
3.4 V
30 30
20 3.2 V 20 T J = 25 ° C
10 3.0 V 10 TJ = 125 ° C TJ = −55 ° C
0 2.8 V 0
0 1 2 3 4 5 1 2 3 4 5
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
0.030 0.016
I D = 10 A
0.025 TJ = 25 ° C TJ = 25 ° C
0.014 VGS = 4.5 V
0.020
0.012
0.015
VGS = 10 V
0.010
0.010
0.005 0.008
2 4 6 8 10 12 5 10 15 20 25 30 35 40
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and
Voltage Gate Voltage
2.5 100,000
VGS = 10 V VGS = 0 V
ID = 10 A
2
10,000
TJ = 150 ° C
1.5
1,000 TJ = 125 ° C
1
0.5 100
−50 −25 0 25 50 75 100 125 150 175 10 20 30 40 50 60
TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current
Temperature vs. Voltage
, DRAIN CURRENT (A) , DRAIN CURRENT (A)
ID ID
) � ) �
, DRAIN−TO−SOURCE RESISTANCE ( , DRAIN−TO−SOURCE RESISTANCE (
DS(on) DS(on)
R R
, LEAKAGE (nA)
IDSS
, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
DS(on)
R
**----- End of picture text -----**
**http://onsemi.com**
**3**
**NTMFS5844NL, NVMFS5844NL**
## **TYPICAL CHARACTERISTICS**
**==> picture [493 x 611] intentionally omitted <==**
**----- Start of picture text -----**
1800 10
1600 VGS = 0 V QT
TJ = 25 ° C
8
1400
Ciss
1200
6
1000
800
4
600 Qgd
Q gs
400 Coss 2 VDS = 48 V
200 ID = 10 A
0 Crss 0 TJ = 25 ° C
0 10 20 30 40 50 60 0 5 10 15 20 25 30
DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Total
Charge
1000 40
VDD = 48 V VGS = 0 V
VIDGS = 10 A = 4.5 V TJ = 25 ° C
30
100
td(off)
tf 20
tr
td(on)
10
10
1 0
1 10 100 0.5 0.6 0.7 0.8 0.9 1.0
RG, GATE RESISTANCE ( � ) VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current
vs. Gate Resistance
1000 50
VGS = 10 V
Single Pulse
100 TC = 25 ° C 40
100 � s 10 � s
30
1 ms
10
20
10 ms
1
RDS(on) Limit 10
dc
Thermal Limit
Package Limit
0.1 0
0.1 1 10 100 25 50 75 100 125 150 175
VDS, DRAISN VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE ( ° C)
C, CAPACITANCE (pF)
, GATE−TO−SOURCE VOLTAGE (V)
GS
V
t, TIME (ns)
, SOURCE CURRENT (A)
IS
, DRAIN CURRENT (A)
ID , SINGLE PULSE DRAIN−TO−
AS
E
SOURCE AVALANCHE ENERGY (mJ)
**----- End of picture text -----**
**Figure 11. Maximum Rated Forward Biased Safe Operating Area**
**Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature**
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**4**
**NTMFS5844NL, NVMFS5844NL**
## **TYPICAL CHARACTERISTICS**
**==> picture [495 x 177] intentionally omitted <==**
**----- Start of picture text -----**
100
Duty Cycle = 0.5
0.2
10
0.1
0.05
1
0.02
0.01
0.1
Single Pulse
0.01
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
PULSE TIME (sec)
C/W) EFFECTIVE TRANSIENT
( ° THERMAL RESISTANCE
JA(t)
�
R
**----- End of picture text -----**
**Figure 13. Thermal Response**
## **DEVICE ORDERING INFORMATION**
|**Device**|**Marking**|**Package**|**Shipping**†|
|---|---|---|---|
|NTMFS5844NLT1G|5844NL|DFN5
(Pb−Free)|1500 / Tape & Reel|
|NVMFS5844NLT1G|V5844L|DFN5
(Pb−Free)|1500 / Tape & Reel|
|NVMFS5844NLWFT1G|5844LW|DFN5
(Pb−Free)|1500 / Tape & Reel|
|NVMFS5844NLT3G|V5844L|DFN5
(Pb−Free)|5000 / Tape & Reel|
|NVMFS5844NLWFT3G|5844LW|DFN5
(Pb−Free)|5000 / Tape & Reel|
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
**http://onsemi.com**
**5**
MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS**
**==> picture [482 x 619] intentionally omitted <==**
**----- Start of picture text -----**
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
+
1 ISSUE N
SCALE 2:1 DATE 25 JUN 2018
2 X NOTES:
1. DIMENSIONING AND TOLERANCING PER
0.20 C ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
D = A o 3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
2 B 2 X BURRS.
D1 MILLIMETERS
0.20 C
DIM MIN NOM MAX
fet = A 0.90 1.00 1.10
A1 0.00 −−− 0.05
E1 4 X b 0.33 0.41 0.51
c 0.23 0.28 0.33
E D 5.00 5.15 5.30
2 D1 4.70 4.90 5.10
c D2 3.80 4.00 4.20
A1 E 6.00 6.15 6.30
E1 5.70 5.90 6.10
1 2 3 4 E2 3.45 3.65 3.85
e 1.27 BSC
TOP VIEW G 0.51 0.575 0.71
C K 1.20 1.35 1.50
SEATING L 0.51 0.575 0.71
0.10 C DETAIL A PLANE L1 0.125 REF
M 3.00 3.40 3.80
~. | A —— 0 −−− 12
0.10 C GENERIC
Sy SIDE VIEW SS MARKING DIAGRAM*
DETAIL A
1
8X b XXXXXX
0.10 C A B e/2 AYWZZ
0.05 c
L e
1 4 XXXXXX = Specific Device Code
P o {IF S
K A = Assembly Location
Y = Year
RECOMMENDED W = Work Week
E2 SOLDERING FOOTPRINT* ZZ = Lot Traceability
(EXPOSED PAD)PIN 5 L1 M 0.4952X 4.560 *This information is generic. Please refer to
2X device data sheet for actual part marking.
a
1.530 Pb−Free indicator, “G” or microdot “ ”,
G = D2 2X may not follow the Generic Marking.may or may not be present. Some products
BOTTOM VIEW 0.475
an 7a 3.200 |
4.530
| |
STYLE 1: STYLE 2: 2X 1.330
PIN 1. 2. SOURCESOURCE PIN 1. 2. ANODEANODE 0.905
3. SOURCE 3. ANODE 1
4. GATE 4. NO CONNECT
5. DRAIN 5. CATHODE 0.965
“ 4X g o l a
1.000 1.270
4X 0.750 one PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98AON14036D Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DESCRIPTION: DFN5 5x6, 1.27P (SO−8FL) PAGE 1 OF 1
**----- End of picture text -----**
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.
www.onsemi.com
© Semiconductor Components Industries, LLC, 2018
**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi’s** product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
## **PUBLICATION ORDERING INFORMATION**
**LITERATURE FULFILLMENT** : **TECHNICAL SUPPORT Email Requests to:** orderlit@onsemi.com **North American Technical Support: Europe, Middle East and Africa Technical Support:** Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910 **onsemi Website:** www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative
◊
**==> picture [232 x 43] intentionally omitted <==**
## Links
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- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/onsemi/ntmfs5844nlt1g/mosfet-n-ch-60v-61a-dfn/dp/2724418)
---
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