# Power MOSFET, N Channel, 100 V, 113 A, 3800 µohm, DFN, Surface Mount ![Product image](https://novapart.co/image/farnell:3677730/) **URL**: https://novapart.co/products/NTMFS4D2N10MDT1G/power-mosfet-n-channel-100-v-113-a-3800-ohm-dfn **SKU**: NTMFS4D2N10MDT1G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €1.0300 **Stock**: 1000+ **Lead Time**: 2 days (indicative) ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | Lead (25-Jun-2025) | | No. Of Pins | 5Pins | | Channel Type | N Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 132W | | Transistor Mounting | Surface Mount | | Rds(On) Test Voltage | 10V | | Transistor Case Style | DFN | | Drain Source Voltage Vds | 100V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 113A | | Drain Source On State Resistance | 3800µohm | | Gate Source Threshold Voltage Max | 4V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3677730/) N-Channel 100 V, 4.3 m 113 A ## MOSFET – Power, Single, ## NTMFS4D2N10MD ## **Features** - Shielded Gate MOSFET Technology - Low R to Minimize Conduction Losses DS(on) **www.onsemi.com** - Low QG and Capacitance to Minimize Driver Losses - Low QRR, Soft Recovery Body Diode **==> picture [479 x 392] intentionally omitted <==** **----- Start of picture text -----**
||||||||||| |---|---|---|---|---|---|---|---|---|---| |•|Low QOSS to Improve Light Load EfficiencyOSS to Improve Light Load Efficiency to Improve Light Load Efficiency|V(BR)DSS|a|RDS(ON) MAX|ID MAX| |•|These Devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free| |4.3 m|@ 10 V| |and are RoHS Compliant|100 V|113 A| |7.1 m|@ 6 V| |Typical Applications| |•|Primary Switch in Isolated DC−DC Converter| |•|Synchronous Rectification (SR) in DC−DC and AC−DC| |D (5,6)| |•|AC−DC Adapters (USB PD) SR| |•|Load Switch, Hotswap, and ORing Switch| |•|BLDC Motor and Solar Inverter| |MAXIMUM RATINGS|(TJ = 25J = 25 = 25|°|C unless otherwise noted)|G (4)| |Parameter|Symbol|Value|Unit| |es|Drain−to−Source Voltage|V|ee|DSS|100|ee|V|re|S (1,2,3)| |Gate−to−Source Voltage|VGS|±|20|V|N−CHANNEL MOSFET| |ee| |Continuous Drain|TC = 25|°|C|ID|113|A| |Current R|JC (Note 1)|Steady|MARKING| |Power Dissipation|State|PD|132|W|DIAGRAM| |R|JC (Note 1)| |D| |Continuous Drain|TA = 25|°|C|ID|16.4|A|1|S|D| |Current R|JA|DFN5|S|4D2N10| |(Notes 1, 2)|Steady| |noes|State|=>|(SO−8FL)|S|AYWZZ|—_| |Power Dissipation|PD|2.8|W|CASE 488AA|G|D| |R|JA (Notes 1, 2)|STYLE 1|D| |Pulsed Drain Current|TA = 25|°|C, tp = 10 s|IDM|763|A|A|= Assembly Location| |Operating Junction and Storage Temperature|TJ, Tstg|−55 to|°|C|Y|= Year| |Range|+150|W|= Work Week| |eo|ZZ|= Lot Traceability| |Source Current (Body Diode)|IS|110|A| |esee|ee| |Single Pulse Drain−to−Source Avalanche|EAS|486|mJ| |Energy (IAV = 18 A) (Note 6)| |ORDERING INFORMATION| |Lead Temperature Soldering Reflow for Solder-|TL|300|°|C| |ing Purposes (1/8|″|from case for 10 s)|Device|Package|Shipping| **----- End of picture text -----**
- Low QOSS to Improve Light Load EfficiencyOSS to Improve Light Load Efficiency to Improve Light Load Efficiency - These Devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free and are RoHS Compliant ## **Typical Applications** - Primary Switch in Isolated DC−DC Converter - Synchronous Rectification (SR) in DC−DC and AC−DC - AC−DC Adapters (USB PD) SR - Load Switch, Hotswap, and ORing Switch - BLDC Motor and Solar Inverter ## **MAXIMUM RATINGS** (TJ = 25J = 25 = 25 ° C unless otherwise noted) **==> picture [185 x 34] intentionally omitted <==** **----- Start of picture text -----**
||||| |---|---|---|---| |Device|Package|Shipping|†| |NTMFS4D2N10MDT1G|DFN5|1500 /| |(Pb−Free)|Tape & Reel| **----- End of picture text -----**
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. ## **THERMAL RESISTANCE RATINGS** **==> picture [277 x 43] intentionally omitted <==** **----- Start of picture text -----**
|||||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---| |es|Junction−to−Case − Steady State (Note 1)|Parameter|Symbol|R|ee|JC|Value|0.95|ee|°|Unit|C/W| |Junction−to−Ambient − Steady State (Note 1)|R|JA|45| **----- End of picture text -----**
1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using 1 in[2] pad size, 1 oz. Cu pad. Publication Order Number: **NTMFS4D2N10MD/D** **1** © Semiconductor Components Industries, LLC, 2020 **November, 2020 − Rev. 2** ## **NTMFS4D2N10MD** **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) |**ELECTRICAL CHARACTERISTICS**(TJ=|25°C unless|otherwise specified)|otherwise specified)||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||||| |Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID=|250�A|100|||V| |Drain−to−Source Breakdown Voltage
Temperature Coefficient|V(BR)DSS/
TJ|ID= 250�A, ref|to 25°C||60||mV/°C| |Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,
VDS= 80 V|TJ= 25°C|||1.0|�A| ||||TJ= 125°C|||100|| |Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS= 20 V||||100|nA| |**ON CHARACTERISTICS**(Note 3)|||||||| |Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= 239�A||2||4|V| |Threshold Temperature Coefficient|VGS(TH)/TJ|ID= 239�A, ref to 25°C|||−7.9||mV/°C| |Drain−to−Source On Resistance|RDS(on)|VGS= 10 V, ID= 46 A|||3.8|4.3|m�| |||VGS= 6 V, ID= 23 A|||5.7|7.1|| |Forward Transconductance|gFS|VDS= 8 V, ID= 46 A|||105||S| |Gate−Resistance|RG|TA= 25°C|||0.97|1.6|�| |**CHARGES & CAPACITANCES**|||||||| |Input Capacitance|CISS|VGS= 0 V, f = 1 MHz, VDS= 50 V|||3100||pF| |Output Capacitance|COSS||||800||| |Reverse Transfer Capacitance|CRSS||||23||| |Output Charge|QOSS|VGS= 0 V, VDS= 50 V|||63.4||nC| |Total Gate Charge|QG(TOT)|VGS= 6 V, VDS= 50 V, ID= 46 A|||25||| |Total Gate Charge|QG(TOT)|VGS= 10 V, VDS= 50 V, ID= 46 A|||40|60|| |Threshold Gate Charge|QG(TH)||||10||| |Gate−to−Source Charge|QGS||||15||| |Gate−to−Drain Charge|QGD||||6.7|10|| |Plateau Voltage|VGP||||5.0||V| |**SWITCHING CHARACTERISTICS**(Note 3)|||||||| |Turn−On Delay Time|td(ON)|VGS= 10 V, VDS= 50 V,
ID= 46 A, RG= 6�|||21||ns| |Rise Time|tr||||9.5||| |Turn−Off Delay Time|td(OFF)||||34||| |Fall Time|tf||||6.5||| |**DRAIN−SOURCE DIODE CHARACTERISTICS**|||||||| |Forward Diode Voltage|VSD|VGS= 0 V,
IS= 46 A|TJ= 25°C||0.85||V| ||||TJ= 125°C||0.73||| |Reverse Recovery Time|tRR|VGS= 0 V, dIS/dt = 1000 A/�s,
IS= 23 A|||23.1||ns| |Reverse Recovery Charge|QRR||||196||nC| |Reverse Recovery Time|tRR|VGS= 0 V, dIS/dt = 100 A/�s,
IS= 46 A|||52.6||ns| |Reverse Recovery Charge|QRR||||66.1||nC| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Switching characteristics are independent of operating junction temperatures 4. R � JA is determined with the device mounted on a 1 in[2] pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. R � JC is guaranteed by design while R � CA is determined by the user’s board design. **www.onsemi.com** **2** **NTMFS4D2N10MD** - a) 45 ° C/W when mounted on a 1 in[2] pad of 2 oz copper. - b) 111 ° C/W when mounted on a minimum pad of 2 oz copper. 5. Pulse Test: pulse width < 300 s, duty cycle < 2%. wu 6. EAS of 486 mJ is based on started TJ = 25 ° C, IAS = 18 A, VDD = 90 V, VGS = 15 V. 100% test at IAS = 51.5 A. 7. As an N−ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. **www.onsemi.com** **3** **NTMFS4D2N10MD** ## **TYPICAL CHARACTERISTICS** **==> picture [491 x 590] intentionally omitted <==** **----- Start of picture text -----**
VGS = 10 V to 3.4 V
100 100 VDS = 8 V
3.2 V
80 3.0 V 80
60 60
2.8 V
40 40 TJ = 25 ° C
2.6 V
20 20
TJ = 125 ° C TJ = −55 ° C
0 0
0 1 2 3 4 5 0 1 2 3 4 5 6 7
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
6 7
TJ = 25 ° C TJ = 25 ° C
ID = 46 A 6 VGS = 6 V
5
5
4
4 VGS = 10 V
3
3
2 2
5 6 7 8 9 10 11 12 5 10 15 20 25 30 35 40 45 50
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and
Voltage Gate Voltage
2.5 100K
VGS = 10 V
ID = 46 A 10K TJ = 150 ° C
2.0 TJ = 125 ° C
1K
TJ = 85 ° C
1.5 100
10 TJ = 25 ° C
1.0
1
0.5 0.1
−50 −25 0 25 50 75 100 125 150 10 20 30 40 50 60 70 80 90 100
TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
, DRAIN CURRENT (A) , DRAIN CURRENT (A)
ID ID
) � ) �
, DRAIN−TO−SOURCE RESISTANCE (m , DRAIN−TO−SOURCE RESISTANCE (m
DS(on) DS(on)
R R
, LEAKAGE (nA)
, NORMALIZED DRAIN−TO− IDSS
SOURCE RESISTANCE
DS(on)
R
**----- End of picture text -----**
**Figure 5. On−Resistance Variation with Temperature** **Figure 6. Drain−to−Source Leakage Current vs. Voltage** **www.onsemi.com** **4** **NTMFS4D2N10MD** ## **TYPICAL CHARACTERISTICS** **==> picture [491 x 593] intentionally omitted <==** **----- Start of picture text -----**
10K 10
CISS 9
8
1K
COSS 7
6 QGS QGD
100 5
4
C RSS 3
10
VGS = 0 V 2 V DS = 50 V
Tf = 1 MHzJ = 25 ° C 1 T IDJ = 46 A = 25 ° C
1 0
0 10 20 30 40 50 60 70 80 90 100 0 5 10 15 20 25 30 35 40 45
VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source vs. Total Charge
500 50
V GS = 0 V
t d(off)
100
tf
tr
10
t d(on)
10
VGS = 10 V
V DS = 50 V
1 ID = 46 A 1 TJ = 125 ° C TJ = 25 ° C TJ = −55 ° C
1 10 50 0.4 0.5 0.6 0.7 0.8 0.9 1.0
RG, GATE RESISTANCE ( � ) VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current
vs. Gate Resistance
1000 100
100 T J(initial) = 25 ° C
10 TJ(initial) = 125 ° C TJ(initial) = 100 ° C
10
1 RDS(on) Limit 1 ms
10 ms
TA = 25 ° C 100 m s
0.1 TJ = Max Rated 1 s
R � JA = 111 ° C/W 10 s
0.01 Single Pulse DC 1
0.01 0.1 1 10 100 300 0.001 0.01 0.1 1 10 100 1000
VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (ms)
C, CAPACITANCE (pF)
, GATE−TO−SOURCE VOLTAGE (V)
GS
V
t, TIME (ns)
, SOURCE CURRENT (A)
IS
, DRAIN CURRENT (A)
ID , AVALANCHE CURRENT (A)
IAS
**----- End of picture text -----**
**Figure 11. Maximum Rated Forward Biased Safe Operating Area** **Figure 12. IPEAK vs. Time in Avalanche** **www.onsemi.com** **5** **NTMFS4D2N10MD** ## **TYPICAL CHARACTERISTICS** **==> picture [491 x 172] intentionally omitted <==** **----- Start of picture text -----**
100
50% Duty Cycle
10 20%
10%
5%
1 2%
1%
0.1
Single Pulse
0.01
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
PULSE TIME (sec)
C/W)
°
R(t) (
**----- End of picture text -----**
**Figure 13. Thermal Characteristics** **www.onsemi.com** **6** **NTMFS4D2N10MD** ## **PACKAGE DIMENSIONS** **==> picture [470 x 445] intentionally omitted <==** **----- Start of picture text -----**
DFN5 5x6, 1.27P
2 X (SO−8FL) NOTES:
0.20 C CASE 488AA 1. DIMENSIONING AND TOLERANCING PERASME Y14.5M, 1994.
ISSUE N 2. CONTROLLING DIMENSION: MILLIMETER.
D < A a 3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
2 B 2 X BURRS.
D1 MILLIMETERS
0.20 C
DIM MIN NOM MAX
fet —= A 0.90 1.00 1.10
A1 0.00 −−− 0.05
E1 4 X b 0.33 0.41 0.51
c 0.23 0.28 0.33
E D 5.00 5.15 5.30
2 D1 4.70 4.90 5.10
c D2 3.80 4.00 4.20
A1 E 6.00 6.15 6.30
E1 5.70 5.90 6.10
1 2 3 4 E2 3.45 3.65 3.85
e 1.27 BSC
TOP VIEW G 0.51 0.575 0.71
C K 1.20 1.35 1.50
SEATING L 0.51 0.575 0.71
0.10 C DETAIL A PLANE L1 0.125 REF
~ | —— M 3.00 3.40 3.80
A 0 −−− 12
0.10 C STYLE 1:
PIN 1. SOURCE
= SIDE VIEW DETAIL A SOLDERING FOOTPRINT*RECOMMENDED === 2. 3. 4. GATESOURCESOURCE
2X 5. DRAIN
8X b 0.495 4.560
0.10 C A B 2X
e/2 1.530
0.05 c
L e
2X
1 4 0.475
T o Fe K SS T 3.200
4.530
E2
(EXPOSED PAD)PIN 5 L1 M 2X 1.330
ae 0.905
1
G D2 0.965
fof i 4X Q n l
BOTTOM VIEW 1.000 1.270
4X 0.750 aaa PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
**----- End of picture text -----**
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