# Power MOSFET, N Channel, 30 V, 69 A, 0.0032 ohm, DFN, Surface Mount ![Product image](https://novapart.co/image/farnell:2728031/) **URL**: https://novapart.co/products/NTMFS4C250NT1G/power-mosfet-n-channel-30-v-69-a-00032-ohm-dfn **SKU**: NTMFS4C250NT1G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.2780 **Stock**: 10+ ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 5Pins | | Channel Type | N Channel | | Power Dissipation | 30.5W | | Transistor Mounting | Surface Mount | | Transistor Polarity | N Channel | | Power Dissipation Pd | 30.5W | | Rds(On) Test Voltage | 10V | | On Resistance Rds(On) | 0.0032ohm | | Transistor Case Style | DFN | | Drain Source Voltage Vds | 30V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 69A | | Drain Source On State Resistance | 0.0032ohm | | Gate Source Threshold Voltage Max | 2.1V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2728031/) ## NTMFS4C250N ## Power MOSFET **30 V, 69 A, Single N−Channel, SO−8 FL** ## **Features** - Low R to Minimize Conduction Losses DS(on) - Low Capacitance to Minimize Driver Losses **www.onsemi.com** • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ~~ee~~ **V(BR)DSS RDS(ON)** ~~ee~~ **MAX ID MAX** ~~ee~~ **Applications** 4.0 m @ 10 V 30 V 69 A • CPU Power Delivery 6.0 m @ 4.5 V • DC−DC Converters **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise stated) D (5−8) **Parameter Symbol Value Unit** Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ± 20 V G (4) Continuous Drain TA = 25 ° C ID 20.0 A ~~———|~~ Current R(Note 1) JA T ~~ee~~ A = 80 ° C 14.9 ~~&~~ S (1,2,3) ° **N−CHANNEL MOSFET** Power Dissipation TA = 25 C PD 2.55 W R JA (Note 1) ~~ee~~ Continuous Drain ee TA = 25 ~~ee~~ ° C ~~ee~~ ID ~~eee~~ 31.6 A **MARKING** Current R(Note 1) JA ≤ 10 s TA = 80 ° C 23.7 **DIAGRAMS** D Power Dissipation TA = 25 ° C PD 6.4 W **SO−8 FLAT LEAD** S D ~~|~~ R JA ≤ 10 s (Note 1) Steady ~~Ft~~ **CASE 488AA** S — 4C250 Continuous Drain State TA = 25 ° C ID 11 A **STYLE 1** S AYWZZ ~~oi~~ Current R(Note 2) JA TA = 80 ° C 8.2 1 G D D Power Dissipation TA = 25 ° C PD 0.77 W A = Assembly Location R JA (Note 2) Y = Year ~~ee~~ Continuous Drain ee ~~ee~~ TC = 25 ° C ID 69 A W = Work Week ~~]~~ Current R(Note 1) JC TC =80 ~~SC~~ ° C ee ~~er~~ 52 ~~ee~~ ZZ = Lot Traceabililty Power Dissipation TC = 25 ° C PD 30.5 W R JC (Note 1) Pulsed Drain TA = 25 ° C, tp = 10 s IDM 166 A **ORDERING INFORMATION** Current ~~a~~ Current Limited by Package TA = 25 ° C IDmax 80 A **Device Package Shipping**[†] Operating Junction and Storage TJ, −55 to ° C NTMFS4C250NT1G SO−8 FL 1500 / Temperature TSTG +150 (Pb−Free) Tape & Reel ~~——~~ Source Current (Body Diode) IS 28 A †For information on tape and reel specifications, Drain to Source dV/dt dV/dt 7.0 V/ns including part orientation and tape sizes, please Single Pulse Drain−to−Source Avalanche EAS 68 mJ refer to our Tape and Reel Packaging Specifications ° Brochure, BRD8011/D. Energy (TJ = 25 C, VGS = 10 V, IL =37 Apk, ~~ee~~ L = 0.1 mH, RGS = 25 ) (Note 3) Lead Temperature for Soldering Purposes TL 260 ° C ~~ee~~ (1/8 ″ from case for 10 s) ~~ee ee~~ Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. 3. Parts are 100% tested at TJ = 25 ° C, VGS = 10 V, IL = 27 Apk, EAS = 36 mJ. Publication Order Number: **NTMFS4C250N/D** **1** © Semiconductor Components Industries, LLC, 2016 **January, 2016 − Rev. 1** **NTMFS4C250N** ## **THERMAL RESISTANCE MAXIMUM RATINGS** |**THERMAL RESISTANCE MAXIMUM RATINGS**|||| |---|---|---|---| |**Parameter**|**Symbol**|**Value**|**Unit**| |Junction−to−Case (Drain)|R�JC|4.1|°C/W| |Junction−to−Ambient – Steady State (Note 4)|R�JA|49|| |Junction−to−Ambient – Steady State (Note 5)|R�JA|162.3|| |Junction−to−Ambient – (t≤10 s) (Note 4)|R�JA|19.5|| 4. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 5. Surface−mounted on FR4 board using the minimum recommended pad size. ## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) |**ELECTRICAL CHARACTERISTICS**(TJ=|25°C unless|otherwise specified)|otherwise specified)||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||||| |Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID= 250�A||30|||V| |Drain−to−Source Breakdown Voltage
(transient)|V(BR)DSSt|VGS= 0 V, ID(aval)= 12.6 A,
Tcase= 25°C, ttransient= 100 ns||34|||V| |Drain−to−Source Breakdown Voltage
Temperature Coefficient|V(BR)DSS/
TJ||||14.4||mV/°C| |Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,
VDS= 24 V|TJ= 25°C|||1.0|�A| ||||TJ= 125°C|||10|| |Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS|=±20 V|||±100|nA| |**ON CHARACTERISTICS**(Note 6)|||||||| |Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID=|250�A|1.3||2.1|V| |Negative Threshold Temperature Coefficient|VGS(TH)/TJ||||3.8||mV/°C| |Drain−to−Source On Resistance|RDS(on)|VGS= 10 V|ID= 30 A||3.2|4.0|m�| |||VGS= 4.5 V|ID= 25 A||4.8|6.0|| |Forward Transconductance|gFS|VDS= 1.5 V, ID= 15 A|||58||S| |Gate Resistance|RG|TA= 25°C||0.3|1.0|2.0|�| |**CHARGES AND CAPACITANCES**|||||||| |Input Capacitance|CISS|VGS= 0 V, f = 1 MHz, VDS= 15 V|||1683||pF| |Output Capacitance|COSS||||841||| |Reverse Transfer Capacitance|CRSS||||40||| |Capacitance Ratio|CRSS/CISS|VGS= 0 V, VDS= 15 V, f = 1 MHz|||0.023||| |Total Gate Charge|QG(TOT)|VGS= 4.5 V, VDS= 15 V; ID= 30 A|||11.6||nC| |Threshold Gate Charge|QG(TH)||||2.6||| |Gate−to−Source Charge|QGS||||4.7||| |Gate−to−Drain Charge|QGD||||4.0||| |Gate Plateau Voltage|VGP||||3.1||V| |Total Gate Charge|QG(TOT)|VGS= 10 V, VDS= 15 V; ID= 30 A|||26||nC| |**SWITCHING CHARACTERISTICS**(Note 7)|||||||| |Turn−On Delay Time|td(ON)|VGS= 4.5 V, VDS= 15 V,
ID= 15 A, RG= 3.0�|||10||ns| |Rise Time|tr||||32||| |Turn−Off Delay Time|td(OFF)||||18||| |Fall Time|tf||||5.0||| 6. Pulse Test: pulse width � 300 � s, duty cycle � 2%. 7. Switching characteristics are independent of operating junction temperatures. **www.onsemi.com** **2** ## **NTMFS4C250N** ## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) |**ELECTRICAL CHARACTERISTICS**(TJ|= 25°C unless|otherwise specified)|otherwise specified)||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**| |**SWITCHING CHARACTERISTICS**(Note 7)|||||||| |Turn−On Delay Time|td(ON)|VGS= 10 V, VDS= 15 V,
ID= 15 A, RG= 3.0�|||8.0||ns| |Rise Time|tr||||28||| |Turn−Off Delay Time|td(OFF)||||24||| |Fall Time|tf||||3.0||| |**DRAIN−SOURCE DIODE CHARACTERISTICS**|||||||| |Forward Diode Voltage|VSD|VGS= 0 V,
IS= 10 A|TJ= 25°C||0.8|1.1|V| ||||TJ= 125°C||0.63||| |Reverse Recovery Time|tRR|VGS= 0 V, dIS/dt = 100 A/�s,
IS= 30 A|||34||ns| |Charge Time|ta||||17||| |Discharge Time|tb||||17||| |Reverse Recovery Charge|QRR||||22||nC| 6. Pulse Test: pulse width � 300 � s, duty cycle � 2%. 7. Switching characteristics are independent of operating junction temperatures. **www.onsemi.com** **3** **NTMFS4C250N** ## **TYPICAL CHARACTERISTICS** **==> picture [238 x 156] intentionally omitted <==** **----- Start of picture text -----**
140
4.5 V to 10 V 4.0 V
130
3.8 V
120
110
100 TJ = 25 ° C 3.6 V
90
80 3.4 V
70
60 3.2 V
50
40 3.0 V
30
2.8 V
20
10 VGS = 2.6 V
0
0 1 2 3 4 5
, DRAIN CURRENT (A)
ID
**----- End of picture text -----**
**==> picture [150 x 9] intentionally omitted <==** **----- Start of picture text -----**
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
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**Figure 1. On−Region Characteristics** **==> picture [238 x 173] intentionally omitted <==** **----- Start of picture text -----**
80
70 V DS = 5 V
60
50
40
30
TJ = 25 ° C
20
TJ = 125 ° C
10
TJ = −55 ° C
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VGS, GATE−TO−SOURCE VOLTAGE (V)
, DRAIN CURRENT (A)
ID
**----- End of picture text -----**
**Figure 2. Transfer Characteristics** **==> picture [492 x 415] intentionally omitted <==** **----- Start of picture text -----**
0.020 0.0060
0.018 I D = 30 A 0.0055 T J = 25 ° C
0.016
0.0050 V GS = 4.5 V
0.014
0.0045
0.012
0.0040
0.010
0.0035 V GS = 10 V
0.008
0.0030
0.006
0.004 0.0025
0.002 0.0020
3 4 5 6 7 8 9 10 10 20 30 40 50 60 70
VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and
Voltage Gate Voltage
1.7 2000
1.6 VGS = 10 V 1800 Ciss
ID = 30 A
1.5 1600
1.4 1400
1.3 1200 C oss V TJ GS = 25 = 0 V ° C
1.2 1000
1.1 800
1.0 600
0.9 400
0.8 200 C rss
0.7 0
−50 −25 0 25 50 75 100 125 150 0 5 10 15 20 25 30
TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
) � ) �
, DRAIN−TO−SOURCE RESISTANCE ( , DRAIN−TO−SOURCE RESISTANCE (
DS(on) DS(on)
R R
) �
, NORMALIZED DRAIN−TO− SOURCE RESISTANCE ( C, CAPACITANCE (pF)
DS(on)
R
**----- End of picture text -----**
**Figure 5. On−Resistance Variation with Temperature** **Figure 6. Capacitance Variation** **www.onsemi.com** **4** **NTMFS4C250N** ## **TYPICAL CHARACTERISTICS** **==> picture [239 x 173] intentionally omitted <==** **----- Start of picture text -----**
10
QT
8
6
4 Q GS Q GD
VGS = 10 V
2 VDD = 15 V
ID = 30 A
TJ = 25 ° C
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26
QG, TOTAL GATE CHARGE (nC)
, GATE−TO−SOURCE VOLTAGE (V)
GS
V
**----- End of picture text -----**
**Figure 7. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge** **==> picture [239 x 156] intentionally omitted <==** **----- Start of picture text -----**
1000
VGS = 10 V
V DD = 15 V
ID = 15 A td(off)
100 tf
tr
td(on)
10
1
1 10 100
t, TIME (ns)
**----- End of picture text -----**
**==> picture [104 x 9] intentionally omitted <==** **----- Start of picture text -----**
RG, GATE RESISTANCE ( � )
**----- End of picture text -----**
**Figure 8. Resistive Switching Time Variation vs. Gate Resistance** **==> picture [491 x 399] intentionally omitted <==** **----- Start of picture text -----**
20 1000
18 V GS = 0 V 0 V < VGS < 10 V
16 100 10 � s
14 100 � s
12 T J = 125 ° C T J = 25 ° C 10 1 ms
10 10 ms
8 1
6
4 0.1 R DS(on) Limit dc
Thermal Limit
2 Package Limit
0 0.01
0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.01 0.1 1 10 100
VSD, SOURCE−TO−DRAIN VOLTAGE (V) RG, GATE RESISTANCE ( � )
Figure 9. Diode Forward Voltage vs. Current Figure 10. Maximum Rated Forward Biased
Safe Operating Area
36 130
120
32 I D = 27 A
110
28 100
90
24
80
20 70
16 60
50
12
40
8 30
20
4
10
0 0
25 50 75 100 125 150 0 5 10 15 20 25 30 35 40 45 50 55 60
TJ, STARTING JUNCTION TEMPERATURE ( ° C) ID (A)
, DRAIN CURRENT (A)
, SOURCE CURRENT (A)IS ID
(S)
FS
G
, SINGLE PULSE DRAIN−TO−
AS
E
SOURCE AVALANCHE ENERGY (mJ)
**----- End of picture text -----**
**Figure 11. Maximum Avalanche Energy vs. Starting Junction Temperature** **Figure 12. GFS vs. ID** **www.onsemi.com** **5** **NTMFS4C250N** ## **TYPICAL CHARACTERISTICS** **==> picture [239 x 173] intentionally omitted <==** **----- Start of picture text -----**
100
10
1
1.E−08 1.E−07 1.E−06 1.E−05 1.E−04 1.E−03
PULSE WIDTH (sec)
, DRAIN CURRENT (A)
ID
**----- End of picture text -----**
**Figure 13. Avalanche Characteristics** **==> picture [489 x 173] intentionally omitted <==** **----- Start of picture text -----**
100
Duty Cycle = 0.5
0.2
10
0.1
0.05
0.02
1
0.01
0.1
Single Pulse
0.01
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
PULSE TIME (sec)
C/W)
°
R(t) (
**----- End of picture text -----**
**Figure 14. Thermal Response** **www.onsemi.com** **6** **NTMFS4C250N** ## **PACKAGE DIMENSIONS** **DFN5 5x6, 1.27P (SO−8FL)** CASE 488AA ISSUE M **==> picture [143 x 154] intentionally omitted <==** **----- Start of picture text -----**
2 X
0.20 C
D < A a
2 B 2 X
D1
0.20 C
fet
E1
E
2
c
1 2 3 4
TOP VIEW
**----- End of picture text -----**
**==> picture [468 x 426] intentionally omitted <==** **----- Start of picture text -----**
NOTES:
1. DIMENSIONING AND TOLERANCING PER
0.20 C ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
D < A a 3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
2 B 2 X BURRS.
D1 MILLIMETERS
0.20 C
DIM MIN NOM MAX
fet —= A 0.90 1.00 1.10
A1 0.00 −−− 0.05
E1 4 X b 0.33 0.41 0.51
c 0.23 0.28 0.33
E D 5.00 5.15 5.30
2 D1 4.70 4.90 5.10
c D2 3.80 4.00 4.20
A1 E 6.00 6.15 6.30
E1 5.70 5.90 6.10
1 2 3 4 E2 3.45 3.65 3.85
e 1.27 BSC
TOP VIEW G 0.51 0.575 0.71
C K 1.20 1.35 1.50
SEATING L 0.51 0.575 0.71
0.10 C DETAIL A PLANE L1 0.125 REF
= | —— M 3.00 3.40 3.80
A STYLE 1: 0 −−− 12
PIN 1. SOURCE
0.10 C 2. SOURCE RECOMMENDED
3. SOURCE
ala SIDE VIEW 4. GATE SOLDERING FOOTPRINT* ==
DETAIL A 5. DRAIN 2X
0.495 4.560
8X b 2X
0.10 C A B 1.530
e/2
0.05 c
L e
1 4
3.200
K 4.530
i a “ 5 Pe
E2 1.330
PIN 5 M 2X
(EXPOSED PAD) L1 0.905
1
a to
0.965
G D2 4X
1.000 1.270
BOTTOM VIEW
oa 4X “ 0.750 ACES PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
**----- End of picture text -----**
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