# Power MOSFET, N Channel, 30 V, 16.4 A, 4600 µohm, SOIC, Surface Mount ![Product image](https://novapart.co/image/farnell:2630358/) **URL**: https://novapart.co/products/NTMFS4C08NT1G/power-mosfet-n-channel-30-v-164-a-4600-ohm-soic **SKU**: NTMFS4C08NT1G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.1910 **Stock**: 200+ **Lead Time**: 134 days (indicative) ## Description Transistor Polarity:N Channel; Continuous Drain Current Id:16.4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0046ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.1V; ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | Lead (25-Jun-2025) | | No. Of Pins | 8Pins | | Channel Type | N Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 2.51W | | Transistor Mounting | Surface Mount | | Rds(On) Test Voltage | 10V | | Transistor Case Style | SOIC | | Drain Source Voltage Vds | 30V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 16.4A | | Drain Source On State Resistance | 4600µohm | | Gate Source Threshold Voltage Max | 2.1V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2630358/) ## NTMFS4C08N MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 52 A ~~—~~ ## **Features** - Low R to Minimize Conduction Losses DS(on) **==> picture [492 x 546] intentionally omitted <==** **----- Start of picture text -----**
||||||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---| |•|Low Capacitance to Minimize Driver Losses|www.onsemi.com| |•|Optimized Gate Charge to Minimize Switching Losses| |•|These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS|V(BR)DSS|RDS(ON) MAX|ID MAX| |Compliant|5.8 m|@ 10 V| |Applications|30 V|52 A| |8.5 m|@ 4.5 V| |•|CPU Power Delivery|[Fe| |•|DC−DC Converters| |D (5−8)| |MAXIMUM RATINGS|(TJ = 25|°|C unless otherwise stated)| |Parameter|Symbol|Value|Unit| |Drain−to−Source Voltage|VDSS|30|V| |G (4)| |Gate−to−Source Voltage|VGS|±|20|V| |Continuous Drain|TA = 25|°|C|ID|16.4|A| |a )|Current R(Note 1)|JA|a|TA = 80|°|C|12.3|N−CHANNEL MOSFET|«3|S (1,2,3)| |Power Dissipation|TA = 25|°|C|PD|2.51|W| |ee|RContinuous DrainJA (Note 1)|ee|TA = 25|ee|°|C|ee|ID|ee|25.3|A|DIAGRAMSMARKING| |Current R(Note 1)|JA|≤|10 s|TA = 80|°|C|19.0|D| |Power Dissipation|TA = 25|°|C|PD|6.0|W|SO−8 FLAT LEAD|SS|4C08N|D| |R|JA|≤|10 s (Note 1)|Steady|CASE 488AA|S|AYWZZ| |||Continuous Drain|State|=e|TA = 25|°|C|ID|9.0|A|STYLE 1|G|D| |ee|Current R(Note 2)|JA|ee|TA = 80|°|C|6.8|1|e|D| |Power Dissipation|TA = 25|°|C|PD|0.76|W|A|= Assembly Location| |R|JA (Note 2)|Y|= Year| |a|Continuous Drain|ee|ee|TC = 25|°|C|ID|52|A|W|= Work Week| |||Current R(Note 1)|JC|TC =80|°|C|ee|eee|39|ZZ|= Lot Traceabililty| |Power Dissipation|TC = 25|°|C|PD|25.5|W|ORDERING INFORMATION| |R|JC (Note 1)| |Pulsed Drain Current|TA = 25|°|C, tp = 10 s|IDM|144|A|Device|Package|Shipping|[†]| |pf|Pulsed Source|TA = 25|ft}|°|C, t|Se|p = 10 s|ISM|560|A|NTMFS4C08NT1G|SO−8 FL|1500 /| |Current (Body Diode)| |(Pb−Free)|Tape & Reel| |Current Limited by Package|TA = 25|°|C|IDmax|80|A| |NTMFS4C08NT3G|SO−8 FL|5000 /| |Operating Junction and Storage|TJ,|−55 to|°|C|(Pb−Free)|Tape & Reel| |Temperature|TSTG|+150| |p________||Source Current (Body Diode)|IS|{||23|||A|†For information on tape and reel specifications,including part orientation and tape sizes, please| |Drain to Source DV/DT|dV/dt|7.0|V/ns|refer to our Tape and Reel Packaging Specifications| |Single Pulse Drain−to−Source Avalanche|EAS|42|mJ|Brochure, BRD8011/D.| |Energy (TJ = 25|°|C, VGS = 10 V, IL = 29 Apk,| |dd|L = 0.1 mH, RGS = 25 ) (Note 3)| |Lead Temperature for Soldering Purposes|TL|260|°|C| |ee|(1/8|″|from case for 10 s)|eee|ee| |Stresses exceeding those listed in the Maximum Ratings table may damage the| |device. If any of these limits are exceeded, device functionality should not be| |assumed, damage may occur and reliability may be affected.| **----- End of picture text -----**
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. Publication Order Number: **NTMFS4C08N/D** **1** **May, 2019 − Rev. 6** ## **NTMFS4C08N** 2. Surface−mounted on FR4 board using the minimum recommended pad size. 3. This is the absolute maximum rating. Parts are 100% tested at TJ = 25 ° C, VGS = 10 V, IL = 21 Apk, EAS = 22 mJ. ## **THERMAL RESISTANCE MAXIMUM RATINGS** |**THERMAL RESISTANCE MAXIMUM RATINGS**|||| |---|---|---|---| |**Parameter**|**Symbol**|**Value**|**Unit**| |Junction−to−Case (Drain)|R�JC|4.9|°C/W| |Junction−to−Ambient – Steady State (Note 4)|R�JA|49.8|| |Junction−to−Ambient – Steady State (Note 5)|R�JA|164.6|| |Junction−to−Ambient – (t≤10 s) (Note 4)|R�JA|21.0|| 4. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 5. Surface−mounted on FR4 board using the minimum recommended pad size. ## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) |**ELECTRICAL CHARACTERISTICS**(TJ=|25°C unless|otherwise specified)|otherwise specified)||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||||| |Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID= 250�A||30|||V| |Drain−to−Source Breakdown Voltage
(transient)|V(BR)DSSt|VGS= 0 V, ID(aval)= 8.4 A,
Tcase= 25°C, ttransient= 100 ns||34|||V| |Drain−to−Source Breakdown Voltage
Temperature Coefficient|V(BR)DSS/
TJ||||13.8||mV/°C| |Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,
VDS= 24 V|TJ= 25°C|||1.0|�A| ||||TJ= 125°C|||10|| |Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS|=±20 V|||±100|nA| |**ON CHARACTERISTICS**(Note 6)|||||||| |Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID=|250�A|1.3||2.1|V| |Negative Threshold Temperature Coefficient|VGS(TH)/TJ||||4.9||mV/°C| |Drain−to−Source On Resistance|RDS(on)|VGS= 10 V|ID= 18 A||4.6|5.8|m�| |||VGS= 4.5 V|ID= 30 A||6.8|8.5|| |Forward Transconductance|gFS|VDS= 1.5 V, ID= 15 A|||42||S| |Gate Resistance|RG|TA= 25°C||0.3|1.0|2.0|�| |**CHARGES AND CAPACITANCES**|||||||| |Input Capacitance|CISS|VGS= 0 V, f = 1 MHz, VDS= 15 V|||1113|1670|pF| |Output Capacitance|COSS||||702||| |Reverse Transfer Capacitance|CRSS||||39||| |Capacitance Ratio|CRSS/CISS|VGS= 0 V, VDS= 15 V, f = 1 MHz|||0.035||| |Total Gate Charge|QG(TOT)|VGS= 4.5 V, VDS= 15 V; ID= 30 A|||8.4||nC| |Threshold Gate Charge|QG(TH)||||1.8||| |Gate−to−Source Charge|QGS||||3.5||| |Gate−to−Drain Charge|QGD||||3.3||| |Gate Plateau Voltage|VGP||||3.4||V| |Total Gate Charge|QG(TOT)|VGS= 10 V, VDS= 15 V; ID= 30 A|||18.2||nC| ## **SWITCHING CHARACTERISTICS** (Note 7) 6. Pulse Test: pulse width � 300 � s, duty cycle � 2%. 7. Switching characteristics are independent of operating junction temperatures. **www.onsemi.com** **2** ## **NTMFS4C08N** ## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) |**ELECTRICAL CHARACTERISTICS**(TJ=|25°C unless|otherwise specified)|otherwise specified)||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**| |**SWITCHING CHARACTERISTICS**(Note 7)|||||||| |Turn−On Delay Time|td(ON)|VGS= 4.5 V, VDS= 15 V,
ID= 15 A, RG= 3.0�|||9.0||ns| |Rise Time|tr||||33||| |Turn−Off Delay Time|td(OFF)||||15||| |Fall Time|tf||||4.0||| |Turn−On Delay Time|td(ON)|VGS= 10 V, VDS= 15 V,
ID= 15 A, RG= 3.0�|||7.0||ns| |Rise Time|tr||||26||| |Turn−Off Delay Time|td(OFF)||||19||| |Fall Time|tf||||3.0||| |**DRAIN−SOURCE DIODE CHARACTERISTICS**|||||||| |Forward Diode Voltage|VSD|VGS= 0 V,
IS= 10 A|TJ= 25°C||0.79|1.1|V| ||||TJ= 125°C||0.66||| |Reverse Recovery Time|tRR|VGS= 0 V, dIS/dt = 100 A/�s,
IS= 30 A|||28.3||ns| |Charge Time|ta||||14.5||| |Discharge Time|tb||||13.8||| |Reverse Recovery Charge|QRR||||15.3||nC| 6. Pulse Test: pulse width � 300 � s, duty cycle � 2%. 7. Switching characteristics are independent of operating junction temperatures. **www.onsemi.com** **3** **NTMFS4C08N** ## **TYPICAL CHARACTERISTICS** **==> picture [490 x 592] intentionally omitted <==** **----- Start of picture text -----**
100 80
90 4.5 V to 10 VTJ = 25 ° C 4.2 V 70 VDS = 3 VDS = 3 V = 3 V
80 4.0 V
60
70 3.8 V
50
60
3.6 V
50 40
3.4 V
40
30
30 3.2 V TJ = 125J = 125 = 125 ° C
20
20 3.0 V TJ = 25J = 25 = 25 ° C
10
10 2.8 V TJ = −55J = −55 = −55 ° C
0 0
0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)GS, GATE−TO−SOURCE VOLTAGE (V), GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
0.020 0.010
0.018 ID = 30 A 0.009 TJ = 25 ° C
0.016
0.008
0.014 VGS = 4.5 V
0.007
0.012
0.006
0.010
0.005
0.008 VGS = 10 V
0.004
0.006
0.004 0.003
0.002 0.002
3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 10 20 30 40 50 60 70
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. VGS Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.7 10000
1.6 ID = 30 A VGS = 0 V TJ = 150 ° C
VGS = 10 V
1.5
1.4 TJ = 125 ° C
1000
1.3
1.2
1.1 TJ = 85 ° C
100
1.0
0.9
0.8
0.7 10
−50 −25 0 25 50 75 100 125 150 5 10 15 20 25 30
TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
, DRAIN CURRENT (A) , DRAIN CURRENT (A)
ID IDD
) � ) �
, DRAIN−TO−SOURCE RESISTANCE ( , DRAIN−TO−SOURCE RESISTANCE (
DS(on) DS(on)
R R
, LEAKAGE (nA)
, DRAIN−TO−SOURCE
IDSS
DS(on)
R RESISTANCE (NORMALIZED)
**----- End of picture text -----**
**==> picture [240 x 174] intentionally omitted <==** **----- Start of picture text -----**
80
VDS = 3 VDS = 3 V = 3 V
70
60
50
40
30
TJ = 125J = 125 = 125 ° C
20
TJ = 25J = 25 = 25 ° C
10
TJ = −55J = −55 = −55 ° C
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VGS, GATE−TO−SOURCE VOLTAGE (V)GS, GATE−TO−SOURCE VOLTAGE (V), GATE−TO−SOURCE VOLTAGE (V)
, DRAIN CURRENT (A)
IDD
**----- End of picture text -----**
**Figure 6. Drain−to−Source Leakage Current vs. Voltage** **Figure 5. On−Resistance Variation with Temperature** **www.onsemi.com** **4** **NTMFS4C08N** ## **TYPICAL CHARACTERISTICS** **==> picture [490 x 175] intentionally omitted <==** **----- Start of picture text -----**
1800 10
1600 V TJGS = 25 = 0 V ° C QT
8
1400
1200 C iss
6
1000
800 C oss Qgs Qgd
4
600 TJ = 25 ° C
400 VDD = 15 V
2
VGS = 10 V
200 Crss ID = 30 A
0 0
0 5 10 15 20 25 30 0 2 4 6 8 10 12 14 16 18 20
VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)
C, CAPACITANCE (pF)
, GATE−TO−SOURCE VOLTAGE (V)
GS
V
**----- End of picture text -----**
**Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge** **Figure 7. Capacitance Variation** **==> picture [240 x 175] intentionally omitted <==** **----- Start of picture text -----**
20
18 VGS = 0 VGS = 0 V = 0 V
16
14
12
10
8
6 TJ = 125J = 125 = 125 ° C
4 TJ = 25J = 25 = 25 ° C
2
0
0.4 0.5 0.6 0.7 0.8 0.9 1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (V)SD, SOURCE−TO−DRAIN VOLTAGE (V), SOURCE−TO−DRAIN VOLTAGE (V)
, SOURCE CURRENT (A)
ISS
**----- End of picture text -----**
**==> picture [491 x 382] intentionally omitted <==** **----- Start of picture text -----**
1000
VDD = 15 V 18 VGS = 0 VGS = 0 V = 0 V
ID = 15 A 16
VGS = 10 V
100 tr 14
tf 12
td(off) 10
8
td(on)
10 6 TJ = 125J = 125 = 125 ° C
4 TJ = 25J = 25 = 25 ° C
2
1 0
1 10 100 0.4 0.5 0.6 0.7 0.8 0.9 1.0
RG, GATE RESISTANCE ( � ) VSD, SOURCE−TO−DRAIN VOLTAGE (V)SD, SOURCE−TO−DRAIN VOLTAGE (V), SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current
vs. Gate Resistance
1000 22
20 ID = 21 A
100 18
10 � s 16
100 � s 14
10
1 ms 12
10 ms 10
1 0 V < VGS < 10 V
Single Pulse 8
TC = 25 ° C 6
0.1 RDS(on) Limit dc 4
Thermal Limit
2
Package Limit
0.01 0
0.01 0.1 1 10 100 25 50 75 100 125 150
VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE ( ° C)
t, TIME (ns)
, SOURCE CURRENT (A)
ISS
, DRAIN CURRENT (A)
ID , SINGLE PULSE DRAIN−TO−
AS
E
SOURCE AVALANCHE ENERGY (mJ)
**----- End of picture text -----**
**Figure 11. Maximum Rated Forward Biased Safe Operating Area** **Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature** **www.onsemi.com** **5** **NTMFS4C08N** ## **TYPICAL CHARACTERISTICS** **==> picture [492 x 382] intentionally omitted <==** **----- Start of picture text -----**
100
Duty Cycle = 50%
20%
10
10%
5%
2%
1
1%
0.1
Single Pulse
0.01
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
PULSE TIME (sec)
Figure 13. Thermal Response
80 100
70
60
TA = 25 ° C
50
TA = 85 ° C
40 10
30
20
10
0 1
0 10 20 30 40 50 60 70 1.E−08 1.E−07 1.E−06 1.E−05 1.E−04 1.E−03
ID (A) PULSE WIDTH (SECONDS)
C/W)
°
R(t) (
(S)
FS
G
, DRAIN CURRENT (A)
ID
**----- End of picture text -----**
**Figure 14. GFS vs. ID** **Figure 15. Avalanche Characteristics** **www.onsemi.com** **6** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [482 x 619] intentionally omitted <==** **----- Start of picture text -----**
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
+
1 ISSUE N
SCALE 2:1 DATE 25 JUN 2018
2 X NOTES:
1. DIMENSIONING AND TOLERANCING PER
0.20 C ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
D = A o 3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
2 B 2 X BURRS.
D1 MILLIMETERS
0.20 C
DIM MIN NOM MAX
fet = A 0.90 1.00 1.10
A1 0.00 −−− 0.05
E1 4 X b 0.33 0.41 0.51
c 0.23 0.28 0.33
E D 5.00 5.15 5.30
2 D1 4.70 4.90 5.10
c D2 3.80 4.00 4.20
A1 E 6.00 6.15 6.30
E1 5.70 5.90 6.10
1 2 3 4 E2 3.45 3.65 3.85
e 1.27 BSC
TOP VIEW G 0.51 0.575 0.71
C K 1.20 1.35 1.50
SEATING L 0.51 0.575 0.71
0.10 C DETAIL A PLANE L1 0.125 REF
M 3.00 3.40 3.80
~. | A —— 0 −−− 12
0.10 C GENERIC
Sy SIDE VIEW SS MARKING DIAGRAM*
DETAIL A
1
8X b XXXXXX
0.10 C A B e/2 AYWZZ
0.05 c
L e
1 4 XXXXXX = Specific Device Code
P o {IF S
K A = Assembly Location
Y = Year
RECOMMENDED W = Work Week
E2 SOLDERING FOOTPRINT* ZZ = Lot Traceability
(EXPOSED PAD)PIN 5 L1 M 0.4952X 4.560 *This information is generic. Please refer to
2X device data sheet for actual part marking.
a
1.530 Pb−Free indicator, “G” or microdot “ ”,
G = D2 2X may not follow the Generic Marking.may or may not be present. Some products
BOTTOM VIEW 0.475
an 7a 3.200 |
4.530
| |
STYLE 1: STYLE 2: 2X 1.330
PIN 1. 2. SOURCESOURCE PIN 1. 2. ANODEANODE 0.905
3. SOURCE 3. ANODE 1
4. GATE 4. NO CONNECT
5. DRAIN 5. CATHODE 0.965
“ 4X g o l a
1.000 1.270
4X 0.750 one PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98AON14036D Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DESCRIPTION: DFN5 5x6, 1.27P (SO−8FL) PAGE 1 OF 1
**----- End of picture text -----**
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