# Power MOSFET, N Channel, 30 V, 78 A, 2700 µohm, DFN, Surface Mount ![Product image](https://novapart.co/image/farnell:3616429/) **URL**: https://novapart.co/products/NTMFS4C05NT3G/power-mosfet-n-channel-30-v-78-a-2700-ohm-dfn **SKU**: NTMFS4C05NT3G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.1830 **Stock**: 10+ ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (15-Jan-2018) | | No. Of Pins | 5Pins | | Channel Type | N Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 33W | | Transistor Mounting | Surface Mount | | Rds(On) Test Voltage | 10V | | Transistor Case Style | DFN | | Drain Source Voltage Vds | 30V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 78A | | Drain Source On State Resistance | 2700µohm | | Gate Source Threshold Voltage Max | 2.2V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3616429/) **Share Feedback DATA SHEET** Your Opinion Matters **www.onsemi.com** ~~ee~~ ## MOSFET ~~—~~ - Power, Single N-Channel, SO-8FL ## 30 V, 78 A NTMFS4C05N ## **Features** - Low R to Minimize Conduction Losses DS(on) - Low Capacitance to Minimize Driver Losses - Optimized Gate Charge to Minimize Switching Losses - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ## **Applications** **==> picture [191 x 49] intentionally omitted <==** **----- Start of picture text -----**
|||| |---|---|---| |V(BR)DSS|RDS(ON) MAX|ID MAX| |3.4 m|@ 10 V| |30 V|78 A| |5.0 m|@ 4.5 V| |eee|ee| **----- End of picture text -----**
**==> picture [109 x 98] intentionally omitted <==** **----- Start of picture text -----**
D (5−8)
G (4)
S (1,2,3)
N−CHANNEL MOSFET
**----- End of picture text -----**
- CPU Power Delivery - DC−DC Converters ## **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise stated) **==> picture [50 x 19] intentionally omitted <==** **----- Start of picture text -----**
MARKING
DIAGRAMS
**----- End of picture text -----**
**==> picture [491 x 362] intentionally omitted <==** **----- Start of picture text -----**
|||||||||||||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |Parameter|Symbol|Value|Unit|D| |S|D| |Drain−to−Source Voltage|VDSS|30|V|SO−8 FLAT LEAD| |S|4C05N| |Gate−to−Source Voltage|VGS|±|20|V|CASE 488AA|S|AYWZZ| |Continuous Drain|TA = 25|°|C|ID|21.7|A|STYLE 1|G|D| |Current R|JA (Note 1)|TA = 80|°|C|16.3|1|D| |a|Power Dissipation|ee|ee|TA = 25|°|C|PD|2.57|W|A|= Assembly Location|——| |a|R|JA (Note 1)|Y|= Year| |Continuous Drain|TA = 25|°|C|ID|34.8|A|W|= Work Week| |a|Current R(Note 1)|JA|≤|10 s|TA = 80|°|C|26.0|ZZ|= Lot Traceabililty| |Power Dissipation|TA = 25|°|C|PD|6.6|W| |Se|R|JA|≤|10 s (Note 1)|Steady|OOee ee|ORDERING INFORMATION| |Continuous Drain|State|TA = 25|°|C|ID|11.9|A| |a|Current RPower DissipationJA (Note 2)|ee|TTAA = 80 = 25|°°|CC|ee|PD|ee|0.778.9|W|NTMFS4C05NT1G|Device|Package|SO−8 FL|Shipping|1500 /|[†]| |R|JA (Note 2)|(Pb−Free)|Tape & Reel| |Continuous Drain|TC = 25|°|C|ID|78|A|NTMFS4C05NT3G|SO−8 FL|5000 /| |Current R|JC (Note 1)|TC =80|°|C|58|(Pb−Free)|Tape & Reel| |aosee|Power DissipationRPulsed Drain CurrentJC (Note 1)|T|ee|A|ee|= 25|°|C, t|ee|TCp = 10 s = 25|ee|°|C|ee|IPDMD|ee|17433|WA|†For information on tape and reel specifications,including part orientation and tape sizes, pleaserefer to our Tape and Reel Packaging Specifications|e| |Current Limited by Package|TA = 25|°|C|IDmax|80|A|Brochure, BRD8011/D.| |Operating Junction and Storage Temperature|TJ, TSTG|−55 to|°|C| |Range|+150| |ee| |Source Current (Body Diode)|IS|30|A| |-——_—}—_}+|Drain to Source dV/dt|dV/dt|7.0|V/ns| ||]| |Single Pulse Drain−to−Source Avalanche|EAS|84|mJ| |Energy (TJ = 25|°|C, VGS = 20 V, IL = 41 Apk,| |L = 0.1 mH, RGS = 25 ) (Note 3)| |ee|Lead Temperature for Soldering Purposes|ee|TL|ee|260|°|C| |ee|(1/8|″|from case for 10 s)| **----- End of picture text -----**
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. 3. This is the absolute maximum ratings. Parts are 100% tested at TJ = 25 ° C, VGS = 20 V, IL = 29 A, EAS = 42 mJ. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2015 **February, 2024 − Rev. 8** **NTMFS4C05N/D** **NTMFS4C05N** ## **THERMAL RESISTANCE MAXIMUM RATINGS** ~~a~~ **Parameter Symbol Value Unit** Junction−to−Case (Drain) R JC 3.8 Junction−to−Ambient – Steady State (Note 4) R JA 48.6 ~~a~~ ° C/W Junction−to−Ambient – Steady State (Note 5) R JA 161.7 ~~a pfBS~~ Junction−to−Ambient – (t ≤ 10 s) (Note 4) R JA 19 4. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 5. Surface−mounted on FR4 board using the minimum recommended pad size. **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) |**Parameter**
**Symbol**
**Test Condition**
**Min**
**Typ**
**Max**
**Unit**
**OFF CHARACTERISTICS**
~~DD~~| |---| |Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS= 0 V, ID= 250 A
30
V
Drain−to−Source Breakdown Voltage
(transient)
V(BR)DSSt
VGS= 0 V, ID(aval)= 12.6 A,
Tcase= 25°C, ttransient= 100 ns
34
V
~~a~~| |Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
12
mV/°C| |Zero Gate Voltage Drain Current
IDSS
VGS= 0 V,
VDS= 24 V
TJ= 25°C
1.0
A
TJ= 125°C
10
Gate−to−Source Leakage Current
IGSS
VDS= 0 V, VGS=±20 V
±100
nA
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~~pT~~| |**ON CHARACTERISTICS**(Note 6)| |Gate Threshold Voltage
VGS(TH)
VGS= VDS, ID= 250 A
1.3
2.2
V
Negative Threshold Temperature Coefficient
VGS(TH)/TJ
5.1
mV/°C
Drain−to−Source On Resistance
RDS(on)
VGS= 10 V
ID= 30 A
2.7
3.4
m
VGS= 4.5 V
ID= 30 A
4.0
5.0
Forward Transconductance
gFS
VDS= 1.5 V, ID= 15 A
68
S
Gate Resistance
RG
TA= 25°C
0.3
1.0
2.0
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~~po~~| |**CHARGES AND CAPACITANCES**| |Input Capacitance
CISS
VGS= 0 V, f = 1 MHz, VDS= 15 V
1972
pF
Output Capacitance
COSS
1215
Reverse Transfer Capacitance
CRSS
59
Capacitance Ratio
CRSS/CISS
VGS= 0 V, VDS= 15 V, f = 1 MHz
0.030
Total Gate Charge
QG(TOT)
VGS= 4.5 V, VDS= 15 V; ID= 30 A
14
nC
Threshold Gate Charge
QG(TH)
3.3
Gate−to−Source Charge
QGS
6.0
Gate−to−Drain Charge
QGD
5.0
Gate Plateau Voltage
VGP
3.1
V
Total Gate Charge
QG(TOT)
VGS= 10 V, VDS= 15 V; ID= 30 A
30
nC
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~~po~~| |**SWITCHING CHARACTERISTICS**(Note 7)| |Turn−On Delay Time
td(ON)
VGS= 4.5 V, VDS= 15 V,
ID= 15 A, RG= 3.0
11
ns
Rise Time
tr
32
Turn−Off Delay Time
td(OFF)
21
Fall Time
tf
7.0
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~~|fT~~| **www.onsemi.com** ~~—_—~~ **www.onsemi.com** **Share Feedback** Your Opinion Matters **2** ## **NTMFS4C05N** **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) |**Parameter**
**Unit**
**Max**
**Typ**
**Min**
**Test Condition**
**Symbol**
**SWITCHING CHARACTERISTICS**(Note 7)
~~a~~| |---| |Turn−On Delay Time
td(ON)
VGS= 10 V, VDS= 15 V,
ID= 15 A, RG= 3.0
8.0
ns
Rise Time
tr
26
Turn−Off Delay Time
td(OFF)
26
Fall Time
tf
5.0
**DRAIN−SOURCE DIODE CHARACTERISTICS**
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~~| ft~~| |Forward Diode Voltage
VSD
VGS= 0 V,
IS= 10 A
TJ= 25°C
0.77
1.1
V
TJ= 125°C
0.62
Reverse Recovery Time
tRR
VGS= 0 V, dIS/dt = 100 A/ s,
IS= 30 A
40.2
ns
Charge Time
ta
20.3
Discharge Time
tb
19.9
Reverse Recovery Charge
QRR
30.2
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
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~~ee~~| |performance may not be indicated by the Electrical Characteristics if operated under different conditions.| |6. Pulse Test: pulse width
300 s, duty cycle
2%.| 7. Switching characteristics are independent of operating junction temperatures. **www.onsemi.com 3** ~~—_—~~ **Share Feedback** Your Opinion Matters **NTMFS4C05N** ## **TYPICAL CHARACTERISTICS** **==> picture [491 x 593] intentionally omitted <==** **----- Start of picture text -----**
140 140
130 10 V TJ = 25 ° C 130 VDS = 5 V
120 a 4 V to 6.5 V 3.8 V 120 a eee cee
110 | WTIf[/ ye ee —Tr.___i|ee 3.6 V 110 ee eeeeee ee eeeeeeee e e
100 100
90 | |e 3.4 V 90 A
80 0 80 roo fd
70 a 3.2 V 70 a ee ee eee
60 60
5040 3.0 V 5040 TJ = 125 ° C
30 2.8 V 30 TJ = 25 ° C
20 ef |a ee 20 | ft //i
100 EF 2.6 V 100 PL EA TJ = −55 ° C |
0 1 2 3 4 5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
Ga 0.028 Ga 0.008
0.026 ID = 30 A TJ = 25 ° C
0.024 | a ee ee ee T J = 25 ° C 0.007 ee e
0.022 on a ee
0.020 1 ee e e
0.006
0.018
a ee ee ee
0.016
0 ee ee 0.005 es es
0.014
2 ee J ro
0.012 VGS = 4.5 V
+ 0.004
0.010 ee EEE ———
0.008 Fh a
0.006 0.003 VGS = 10 V
0.004 Pp STE pf ff
0.002 a ee eee eee 0.002 a
3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 10 20 30 40 50 60 70
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. VGS Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.7 10000
1.6 I D = 30 A VGS = 0 V
1.5 VGS = 10 V TJ = 150 ° C
RR a ee ——
1.4 1000 TJ = 125 ° C
1.3 FEE) ea e
1.2 ee ee ee ee ee _——
1.1
1.0 a 100 ae a TJ = 85 ° eee C ee e
0.9
0.8 Pe ei eee a
0.7 ee ee 10 ee ee
−50 −25 0 25 50 75 100 125 150 5 10 15 20 25 30
TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
, DRAIN CURRENT (A) , DRAIN CURRENT (A)
ID ID
) )
, DRAIN−TO−SOURCE RESISTANCE ( , DRAIN−TO−SOURCE RESISTANCE (
DS(on) DS(on)
R R
, LEAKAGE (nA)
, DRAIN−TO−SOURCE RES- IDSS
ISTANCE (NORMALIZED)
DS(on)
R
**----- End of picture text -----**
**Figure 5. On−Resistance Variation with Temperature** **Figure 6. Drain−to−Source Leakage Current vs. Voltage** **www.onsemi.com** **Share Feedback** Your Opinion Matters **4** **NTMFS4C05N** ## **TYPICAL CHARACTERISTICS** **==> picture [492 x 594] intentionally omitted <==** **----- Start of picture text -----**
3000 10
2750 VGS = 0 V QT
2500 TJ = 25 ° C
8
2250 Ciss
2000
S a 6 ae
1750 a ee ee ee A
1500 Coss
1250 a eeee ee 4 Qgs Qgd VannSO
1000 ns ay
750 TJ = 25 ° C
2 VDD = 15 V
500 ns
250 Crss VIDGS = 30 A = 10 V
0 Sa ee e es 0 YT
0 5 10 15 20 25 30 0 4 8 12 16 20 24 28 32
VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000 20
VDD = 15 V 18 VGS = 0 V
ID = 15 A
VGS = 10 V aPittyee td(off) I 16 FT | | ff
100 p e td(on) 14
12
tr | 10 E t
tf 8
10
en alll 6 ee ey ee
TJ = 125 ° C
4
1 PEELEa 20 fF Ps [Yt Lf —siE TJ = 25 ° C rT”
1 10 100 0.4 0.5 0.6 0.7 0.8 0.9 1.0
RG, GATE RESISTANCE ( Q ) VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current
vs. Gate Resistance
1000 45
ID = 29 A
40
100 10 s 35
100 s
30
10 1 ms
25
10 ms
20
1 0 V < VGS < 10 V
Single Pulse 15
TC = 25 ° C
0.1 RDS(on) Limit dc 10
Thermal Limit
5
Package Limit
0.01 att 0 P| | | | | | ée ET
0.01 0.1 1 10 100 25 50 75 100 125 150
VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE ( ° C)
C, CAPACITANCE (pF)
, GATE−TO−SOURCE VOLTAGE (V)
GS
V
t, TIME (ns)
, SOURCE CURRENT (A)
IS
, DRAIN CURRENT (A)
ID , SINGLE PULSE DRAIN−TO−
AS
E
SOURCE AVALANCHE ENERGY (mJ)
**----- End of picture text -----**
**Figure 11. Maximum Rated Forward Biased Safe Operating Area** **Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature** **www.onsemi.com** **Share Feedback** Your Opinion Matters **5** **NTMFS4C05N** ## **TYPICAL CHARACTERISTICS** **==> picture [493 x 591] intentionally omitted <==** **----- Start of picture text -----**
100
P Duty Cycle = 50% H a
20% S e ee
10 i 10% aiee — nn
| 5%
2%
1 ii i me e e
e 1% e
e t
P T tt
0.1 EITM | | E TI
a a 0 | |
0.01 1art| Single Pulse TMIaCITIeea|ETT
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
PULSE TIME (sec)
Figure 13. Thermal Response
10
a a aee
ee Duty Cycle = 50% nlee
aee
1 _ee 20% SSS SSS Se ee | ll
PS 10%
a 5% osa om een A
= 0.1 2% P|errereETE | ET
1% [.][ 2S] SS = = SS Se eels
eS [=.] tt YY TC = 25 ° C
se| erreeee ettT fT Tt tty
Single Pulse
0.01 TI on
0.000001 0.00001 0.0001 0.001 0.01 0.1 1
PULSE TIME (sec)
Figure 14. Thermal Response
120 100
100 PtBERR| | | | ttra pet tt td Co ee eeNooll t
80 Pi | lt preLZ aesEE TE EE TT CPIEONETNAii nu T TA = 25 ° C |
TA = 85 ° C
604020 Fa‘ceceeeeeeeePtHAAEEYi EEETP PTEETTbeTE TTped 10 LUTTEPEERoo PREon SAATCooIPA NKECo
ASE a ea |
0 ecoccercercerees) 1 LLIN
EU Cd
0 10 20 30 40 50 60 70 80 1.E−07 1.E−06 1.E−05 1.E−04 1.E−03
ID (A) PULSE WIDTH (SECONDS)
C/W)
°
R(t) (
C/W)
°
(t) (
JC
R
(S)
FS
G
, DRAIN CURRENT (A)
ID
**----- End of picture text -----**
**Figure 15. GFS vs. ID** **Figure 16. Avalanche Characteristics** **www.onsemi.com** **Share Feedback** Your Opinion Matters **6** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [493 x 621] intentionally omitted <==** **----- Start of picture text -----**
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
1 ISSUE N
SCALE 2:1 DATE 25 JUN 2018
2 X NOTES:
1. DIMENSIONING AND TOLERANCING PER
0.20 C ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
D A 3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
2 B 2 X BURRS.
D1 MILLIMETERS
0.20 C
DIM MIN NOM MAX
A 0.90 1.00 1.10
A1 0.00 −−− 0.05
E1 4 X b 0.33 0.41 0.51
� c 0.23 0.28 0.33
E D 5.00 5.15 5.30
2 D1 4.70 4.90 5.10
c D2 3.80 4.00 4.20
A1 E 6.00 6.15 6.30
E1 5.70 5.90 6.10
1 2 3 4 E2 3.45 3.65 3.85
e 1.27 BSC
TOP VIEW G 0.51 0.575 0.71
C K 1.20 1.35 1.50
SEATING L 0.51 0.575 0.71
0.10 C DETAIL A PLANE L1 0.125 REF
M 3.00 3.40 3.80
A � 0 � −−− 12 �
0.10 C GENERIC
SIDE VIEW MARKING DIAGRAM*
DETAIL A
1
8X b XXXXXX
0.10 C A B e/2 AYWZZ
0.05 c
L e
1 4 XXXXXX = Specific Device Code
K A = Assembly Location
Y = Year
RECOMMENDED W = Work Week
E2 SOLDERING FOOTPRINT* ZZ = Lot Traceability
(EXPOSED PAD)PIN 5 L1 M 0.4952X 4.560 *This information is generic. Please refer to
2X device data sheet for actual part marking.
1.530 Pb−Free indicator, “G” or microdot “ � ”,
may or may not be present. Some products
G D2 2X may not follow the Generic Marking.
BOTTOM VIEW 0.475
3.200
4.530
STYLE 1: STYLE 2: 2X 1.330
PIN 1. 2. SOURCESOURCE PIN 1. 2. ANODEANODE 0.905
3. SOURCE 3. ANODE 1
4. GATE 4. NO CONNECT
5. DRAIN 5. CATHODE 0.965
4X
1.000 1.270
4X 0.750 PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the onsemi Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98AON14036D Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DESCRIPTION: DFN5 5x6, 1.27P (SO−8FL) PAGE 1 OF 1
**----- End of picture text -----**
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