# Power MOSFET, N Channel, 30 V, 136 A, 1500 µohm, SO-8 FL, Surface Mount ![Product image](https://novapart.co/image/farnell:2630353/) **URL**: https://novapart.co/products/NTMFS4C03NT1G/power-mosfet-n-channel-30-v-136-a-1500-ohm-so-8-fl **SKU**: NTMFS4C03NT1G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.1490 **Stock**: 10+ ## Description Transistor Polarity:N Channel; Continuous Drain Current Id:136A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0015ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; P ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | Lead (25-Jun-2025) | | No. Of Pins | 8Pins | | Channel Type | N Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 64W | | Transistor Mounting | Surface Mount | | Rds(On) Test Voltage | 10V | | Transistor Case Style | SO-8 FL | | Drain Source Voltage Vds | 30V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 136A | | Drain Source On State Resistance | 1500µohm | | Gate Source Threshold Voltage Max | 2.2V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2630353/) ## NTMFS4C03N MOSFET – Power, Single, N-Channel, SO-8FL ~~=~~ 30 V, 2.1 m 136 A ## **Features** - Small Footprint (5x6 mm) for Compact Design **www.onsemi.com** - Low R to Minimize Conduction Losses DS(on) - Low QG and Capacitance to Minimize Driver Losses - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) ~~ee~~ **Parameter Symbol Value Unit** Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS 20 V ~~te~~ Continuous Drain CurTC = 25 ° C ID 136 A rent R JC (Notes 1, 3) Steady Power Dissipation State TC = 25 ° C PD 64 W R JC (Notes 1, 3) ~~J| PrFAR~~ Continuous Drain TA = 25 ° C ID 30 A Current R JA (Notes 1, 2, 3) Steady State Power Dissipation TA = 25 ° C PD 3.1 W R JA (Notes 1, 2, 3) ~~—_} + 44+ a~~ Pulsed Drain Current TA = 25 ° C, tp = 10 s IDM 352 A Operating Junction and Storage Temperature TJ, Tstg −55 to ° C 150 ~~ee~~ Source Current (Body Diode) IS 53 A ~~ee ee~~ Single Pulse Drain−to−Source Avalanche EAS 549 mJ Energy (IL(pk) = 11 A) ~~ee~~ Lead Temperature for Soldering Purposes(1/8 ″ from case for 10 s) ~~ee~~ TL 260 ° C ~~ee~~ Stresses exceeding those listed in the Maximum Ratings table may damage the ~~ee~~ device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. **THERMAL RESISTANCE MAXIMUM RATINGS** (Note 1) **==> picture [190 x 331] intentionally omitted <==** **----- Start of picture text -----**
rs V(BR)DSS RDS(ON) ee MAX ID MAX
2.1 m @ 10 V
30 V 136 A
2.8 m @ 4.5 V
D (5,6)
G (4)
re S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAM
D
S D
1
S 4C03N
SO−8 FLAT LEAD S AYWZZ
CASE 488AA G D
STYLE 1 — D
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
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**ORDERING INFORMATION** **Parameter Symbol Value Unit Device Package Shipping**[†] Junction−to−Case − Steady State (Note 2) R JC 1.95 ° C/W NTMFS4C03NT1G SO−8FL 1500 / (Pb−Free) Tape & Reel Junction−to−Ambient − Steady State (Note 2) R JA 40 NTMFS4C03NT3G SO−8FL 5000 / 1. The entire application environment impacts the thermal resistance values shown, (Pb−Free) Tape & Reel ~~es~~ they are not constants and are only valid for the particular conditions noted. ~~=~~ 2. Surface−mounted on FR4 board using a 650 mm[2] , 2 oz. Cu pad. †For information on tape and reel specifications, 3. Maximum current for pulses as long as 1 second is higher but is dependent including part orientation and tape sizes, please on pulse duration and duty cycle. refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: **NTMFS4C03N/D** **1** © Semiconductor Components Industries, LLC, 2014 **May, 2019 − Rev. 2** ## **NTMFS4C03N** ## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) |**ELECTRICAL CHARACTERISTICS**(TJ=|25°C unless|otherwise specified)|otherwise specified)||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||||| |Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID=|250�A|30|||V| |Drain−to−Source Breakdown Voltage
Temperature Coefficient|V(BR)DSS/
TJ||||18.2||mV/°C| |Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,
VDS= 24 V|TJ= 25°C|||1|�A| ||||TJ= 125°C|||10|| |Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS= 20 V||||100|nA| |**ON CHARACTERISTICS**(Note 4)|||||||| |Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= 250�A||1.3||2.2|V| |Negative Threshold Temperature Coefficient|VGS(TH)/TJ||||4.8||mV/°C| |Drain−to−Source On Resistance|RDS(on)|VGS= 10 V|ID= 30 A||1.5|2.1|m�| |||VGS= 4.5 V|ID= 30 A||2.2|2.8|| |Forward Transconductance|gFS|VDS= 3 V, ID= 30 A|||136||S| |Gate Resistance|RG|TA= 25°C|||1.0||�| |**CHARGES AND CAPACITANCES**|||||||| |Input Capacitance|CISS|VGS= 0 V, f = 1 MHz, VDS= 15 V|||3071||pF| |Output Capacitance|COSS||||1673||| |Reverse Transfer Capacitance|CRSS||||67||| |Total Gate Charge|QG(TOT)|VGS= 4.5 V, VDS= 15 V; ID= 30 A|||20.8||nC| |Threshold Gate Charge|QG(TH)||||4.9||| |Gate−to−Source Charge|QGS||||8.5||| |Gate−to−Drain Charge|QGD||||4.7||| |Total Gate Charge|QG(TOT)|VGS= 10 V, VDS= 15 V,
ID= 30 A|||45.2||nC| |**SWITCHING CHARACTERISTICS**(Note 5)|||||||| |Turn−On Delay Time|td(ON)|VGS= 4.5 V, VDS= 15 V, ID= 15 A,
RG= 3.0�|||14||ns| |Rise Time|tr||||32||| |Turn−Off Delay Time|td(OFF)||||27||| |Fall Time|tf||||17||| |**DRAIN−SOURCE DIODE CHARACTERISTICS**|||||||| |Forward Diode Voltage|VSD|VGS= 0 V,
IS= 10 A|TJ= 25°C||0.75|1.1|V| ||||TJ= 125°C||0.6||| |Reverse Recovery Time|tRR|VGS= 0 V, dIS/dt = 100 A/�s,
IS= 30 A|||47||ns| |Charge Time|ta||||23||| |Discharge Time|tb||||24||| |Reverse Recovery Charge|QRR||||39||nC| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width � 300 � s, duty cycle � 2%. 5. Switching characteristics are independent of operating junction temperatures. **www.onsemi.com** **2** **NTMFS4C03N** ## **TYPICAL CHARACTERISTICS** **==> picture [244 x 159] intentionally omitted <==** **----- Start of picture text -----**
250
225 4.5 V 3.8 V TJ = 25 ° C
200 3.6 V
3.4 V
175
150 VGS = 10 V
3.2 V
125
100
3.0 V
75
50 2.8 V
25 2.6 V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
, DRAIN CURRENT (A)
ID
**----- End of picture text -----**
**==> picture [240 x 159] intentionally omitted <==** **----- Start of picture text -----**
250
VDS = 3 V
225
200
175
150
125
100
75 TJ = 150 ° C
50 TJ = 25 ° C TJ = −55 ° C
25
0
1.5 2 2.5 3 3.5 4 4.5
, DRAIN CURRENT (A)
ID
**----- End of picture text -----**
**==> picture [150 x 9] intentionally omitted <==** **----- Start of picture text -----**
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
**----- End of picture text -----**
**==> picture [147 x 9] intentionally omitted <==** **----- Start of picture text -----**
VGS, GATE−TO−SOURCE VOLTAGE (V)
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**Figure 1. On−Region Characteristics** **Figure 2. Transfer Characteristics** **==> picture [245 x 188] intentionally omitted <==** **----- Start of picture text -----**
3.0
ID = 30 A
2.8
TJ = 25 ° C
2.6
2.4
2.2
2.0
1.8
1.6
1.4
3 4 5 6 7 8 9 10
VGS, GATE−TO−SOURCE VOLTAGE (V)
) �
, DRAIN−TO−SOURCE RESISTANCE (m
DS(on)
R
**----- End of picture text -----**
**==> picture [244 x 215] intentionally omitted <==** **----- Start of picture text -----**
3.0
TJ = 25 ° C
2.8
2.6
2.4 VGS = 4.5 V
2.2
2.0
1.8
1.6 V GS = 10 V
1.4
0 25 50 75 100 125 150 175 200 225 250
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
) �
, DRAIN−TO−SOURCE RESISTANCE (m
DS(on)
R
**----- End of picture text -----**
**Figure 3. On−Resistance vs. VGS** **==> picture [490 x 175] intentionally omitted <==** **----- Start of picture text -----**
1.8 10000
1.6 VID GS = 30 A= 10 V VGS = 0 V TJ = 125 ° C
1.4 1000 TJ = 100 ° C
1.2 TJ = 85 ° C
1.0 100
0.8
0.6 10
−50 −25 0 25 50 75 100 125 150 0 5 10 15 20 25 30
TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
, LEAKAGE (nA)
, DRAIN−TO−SOURCE
IDSS
DS(on)
R RESISTANCE (NORMALIZED)
**----- End of picture text -----**
**Figure 5. On−Resistance Variation with Temperature** **Figure 6. Drain−to−Source Leakage Current vs. Voltage** **www.onsemi.com** **3** **NTMFS4C03N** ## **TYPICAL CHARACTERISTICS** **==> picture [491 x 596] intentionally omitted <==** **----- Start of picture text -----**
10000 12 18
11
Ciss 10 Q T 15
9
Coss
1000 8 12
VGS
7
VDS
6 9
5
100 Crss 43 Qgs Qgd TJ = 25 ° C 6
VGS = 0 V 2 VDS = 15 V 3
TJ = 25 ° C 1 ID = 30 A
f = 1 MHz
10 0 0
0.1 1 10 100 0 5 10 15 20 25 30 35 40 45 50
VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000 1000.0
VDD = 15 V VGS = 0 V
ID = 15 A
VGS = 4.5 V 100.0
td(off)
100 ttrf 10.0 TJ = 150 ° C
TJ = 25 ° C
td(on) 1.0 TJ = −55 ° C
10 0.1
0.1 1 10 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
RG, GATE RESISTANCE ( � ) VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current
vs. Gate Resistance
1000
100
100 � s
10
1 ms
1 VGS ≤ 10 V 10 ms
TC = 25 ° C
0.1 RDS(on) Limit DC
Thermal Limit
Package Limit
0.01
0.01 0.1 1 10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
, GATE−TO−SOURCE VOLTAGE (V) , DRAIN−TO−SOURCE VOLTAGE (V)
GS DS
V V
t, TIME (ns)
, SOURCE CURRENT (A)
IS
, DRAIN CURRENT (A)
ID
**----- End of picture text -----**
**Figure 11. Maximum Rated Forward Biased Safe Operating Area** **www.onsemi.com** **4** **NTMFS4C03N** ## **TYPICAL CHARACTERISTICS** **==> picture [491 x 175] intentionally omitted <==** **----- Start of picture text -----**
100
R � JA Steady State = 40 ° C/W
Duty Cycle = 50%
10 20%
10%
5% PCB Cu Area = 650 mm [2]
1 2% PCB Cu Thk = 2 oz
1%
0.1
0.01
Single Pulse
0.001
1E−06 1E−05 1E−04 1E−03 1E−02 1E−01 1E+00 1E+01 1E+02 1E+03
PULSE TIME (sec)
C/W)
°
R(t) (
**----- End of picture text -----**
**Figure 12. Thermal Impedance (Junction−to−Ambient)** **==> picture [259 x 172] intentionally omitted <==** **----- Start of picture text -----**
100
TJ(initial) = 25 ° C
10
TJ(initial) = 100 ° C
1
1.00E−04 1.00E−03 1.00E−02
TIME IN AVALANCHE (s)
, (A)
IPEAK
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**Figure 13. Avalanche Characteristics** **www.onsemi.com** **5** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [482 x 619] intentionally omitted <==** **----- Start of picture text -----**
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
+
1 ISSUE N
SCALE 2:1 DATE 25 JUN 2018
2 X NOTES:
1. DIMENSIONING AND TOLERANCING PER
0.20 C ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
D = A o 3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
2 B 2 X BURRS.
D1 MILLIMETERS
0.20 C
DIM MIN NOM MAX
fet = A 0.90 1.00 1.10
A1 0.00 −−− 0.05
E1 4 X b 0.33 0.41 0.51
c 0.23 0.28 0.33
E D 5.00 5.15 5.30
2 D1 4.70 4.90 5.10
c D2 3.80 4.00 4.20
A1 E 6.00 6.15 6.30
E1 5.70 5.90 6.10
1 2 3 4 E2 3.45 3.65 3.85
e 1.27 BSC
TOP VIEW G 0.51 0.575 0.71
C K 1.20 1.35 1.50
SEATING L 0.51 0.575 0.71
0.10 C DETAIL A PLANE L1 0.125 REF
M 3.00 3.40 3.80
~. | A —— 0 −−− 12
0.10 C GENERIC
Sy SIDE VIEW SS MARKING DIAGRAM*
DETAIL A
1
8X b XXXXXX
0.10 C A B e/2 AYWZZ
0.05 c
L e
1 4 XXXXXX = Specific Device Code
P o {IF S
K A = Assembly Location
Y = Year
RECOMMENDED W = Work Week
E2 SOLDERING FOOTPRINT* ZZ = Lot Traceability
(EXPOSED PAD)PIN 5 L1 M 0.4952X 4.560 *This information is generic. Please refer to
2X device data sheet for actual part marking.
a
1.530 Pb−Free indicator, “G” or microdot “ ”,
G = D2 2X may not follow the Generic Marking.may or may not be present. Some products
BOTTOM VIEW 0.475
an 7a 3.200 |
4.530
| |
STYLE 1: STYLE 2: 2X 1.330
PIN 1. 2. SOURCESOURCE PIN 1. 2. ANODEANODE 0.905
3. SOURCE 3. ANODE 1
4. GATE 4. NO CONNECT
5. DRAIN 5. CATHODE 0.965
“ 4X g o l a
1.000 1.270
4X 0.750 one PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98AON14036D Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DESCRIPTION: DFN5 5x6, 1.27P (SO−8FL) PAGE 1 OF 1
**----- End of picture text -----**
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