# Power MOSFET, N Channel, 30 V, 207 A, 950 µohm, SO-8 FL, Surface Mount

![Product image](https://novapart.co/image/farnell:2724416/)

**URL**: https://novapart.co/products/NTMFS4982NFT1G/power-mosfet-n-channel-30-v-207-a-950-ohm-so-8-fl
**SKU**: NTMFS4982NFT1G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.7440
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Power Dissipation | 89.3W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 89.3W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 950µohm |
| Transistor Case Style | SO-8 FL |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 207A |
| Drain Source On State Resistance | 950µohm |
| Gate Source Threshold Voltage Max | 1.7V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2724416/)

## NTMFS4982NF 

## Power MOSFET 

## **30 V, 207 A, Single N−Channel, SO−8 FL** 

## **Features** 

- Integrated Schottky Diode 

- Low R to Minimize Conduction Losses DS(on) 

- Low Capacitance to Minimize Driver Losses 

## **http://onsemi.com** 

- Optimized Gate Charge to Minimize Switching Losses 

- These Devices are Pb−Free and are RoHS Compliant 

## **Applications** 

- Server, Netcom, POL 

- Synchronous Rectification for DC−DC Converters 

- Low Side Switching 

- High Performance Applications 

## **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise stated) 

||||~~es~~|||
|---|---|---|---|---|---|
|**Parameter**<br>~~ee~~|||**Symbol**<br>~~ee~~<br>~~es~~<br>~~es~~|**Value**<br>~~ee~~|**Unit**<br>~~ee~~|
|Drain−to−Source Voltage<br>~~ee~~|||VDSS<br>~~es~~<br>~~ee~~<br>~~es~~|30<br>~~ee~~|V<br>~~ee~~|
|Gate−to−Source Voltage<br>~~| EY~~|||VGS<br>~~es~~<br>~~EY~~|±20<br>~~EY~~|V<br>~~EY~~|
|Continuous Drain<br>Current R JA<br>(Note 1)<br>~~eo|~~|Steady<br>State<br>~~| EY~~<br> <br> <br>~~ee~~|TA= 25°C<br>~~EY~~|ID<br>~~EY~~|36<br>~~EY~~|A<br>~~EY~~|
|||TA= 85°C<br>~~EY~~||26<br>~~EY~~||
|Power Dissipation<br>R JA(Note 1)<br>~~eo|~~<br>~~a ~~||TA= 25°C<br>~~EY~~<br>|PD<br>~~EY~~<br>|2.7<br>~~EY~~<br>|W<br>~~EY~~<br>|
|Continuous Drain<br>Current R JA<br>10 sec<br>||TA= 25°C<br>|ID<br>~~a~~|60<br>|A<br>~~a~~|
|||TA= 85°C<br> ~~a~~||43<br>~~a~~||
|Power Dissipation<br>R JA, t<br>10 sec<br>||TA= 25°C<br> ~~a~~|PD<br>~~a~~|7.4<br>~~a~~|W<br>~~a~~|
|Continuous Drain<br>Current R JA<br>(Note 2)<br>||TA= 25°C<br> ~~a~~|ID<br>~~a~~|26.5<br>~~a~~|A<br>~~a~~|
|||TA= 85°C<br> ~~a~~||19<br>~~a~~||
|Power Dissipation<br>R JA(Note 2)<br>~~a~~||TA= 25°C|PD|1.5|W|
|Continuous Drain<br>Current R JC<br>(Note 1)<br>~~a ~~<br>~~es ee~~||TC= 25°C<br>~~ee~~|ID<br>~~ee~~|207<br>~~ee~~|A<br>~~ee~~|
|||TC= 85°C<br> ~~ee~~||149<br>~~ee~~||
|Power Dissipation<br>R JC(Note 1)<br>~~es ee~~||TC= 25°C|PD|89.3|W|
|Pulsed Drain Current<br>~~es ee~~<br>~~————~~|tp=10 s<br>~~ee~~<br>~~————~~|TA= 25°C<br>~~————~~|IDM<br>~~————~~|350<br>~~————~~|A<br>~~————~~|
|Current limited by package<br>~~————~~<br>~~a~~||TA= 25°C<br>~~————~~|IDmaxpkg<br>~~————~~|100<br>~~————~~|A<br>~~————~~|
|Operating Junction and Storage Temperature<br>~~a~~|||TJ,<br>TSTG|−55 to<br>+150|°C|
|Source Current (Body Diode)<br>~~a~~<br>~~a~~|||IS<br>~~a~~|54<br>~~a~~|A<br>~~a~~|
|Drain to Source dV/dt<br>~~a~~<br>~~a~~<br>~~ee~~|||dV/dt<br>~~a~~<br>~~ee~~|6<br>~~a~~<br>~~ee~~|V/ns<br>~~a~~<br>~~ee~~|
|Single Pulse Drain−to−Source Avalanche<br>Energy (VDD= 50 V, VGS= 10 V, IL= 50 Apk,<br>L = 0.1 mH, RG= 25<br>~~a~~<br>~~ee~~|||EAS<br>~~ee~~|125<br>~~ee~~|mJ<br>~~ee~~|
|Lead Temperature for Soldering Purposes<br>(1/8” from case for 10 s)<br>~~ee ~~<br>~~a~~|||TL<br> ~~ee~~<br>~~a~~|260<br>~~ee~~<br>~~a~~|°C<br>~~ee~~<br>~~a~~|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

**==> picture [191 x 49] intentionally omitted <==**

**----- Start of picture text -----**<br>
V(BR)DSS RDS(ON) MAX ID MAX<br>1.3 m  @ 10 V<br>30 V 207 A<br>1.9 m  @ 4.5 V<br>a eee ee<br>**----- End of picture text -----**<br>


## **N−CHANNEL MOSFET** 

**==> picture [173 x 238] intentionally omitted <==**

**----- Start of picture text -----**<br>
D (5, 6)<br>G<br>(4)<br>S (1, 2, 3)<br>MARKING<br>DIAGRAM<br>D<br>S D<br>1<br>S 4982NF<br>SO−8 FLAT LEAD S AYWZZ<br>CASE 488AA G D<br>STYLE 1 D<br>A = Assembly Location<br>Y = Year<br>W = Work Week<br>ZZ = Lot Traceability<br>**----- End of picture text -----**<br>


**ORDERING INFORMATION** 

|**Device**<br>~~—~~|**Package**<br>~~—~~|**Shipping**†|
|---|---|---|
|NTMFS4982NFT1G<br>~~—~~|SO−8FL<br>(Pb−Free)<br>~~—~~|1500 /<br>Tape & Reel|
|NTMFS4982NFT3G<br>~~—~~|SO−8FL<br>(Pb−Free)<br>~~—~~|5000 /<br>Tape & Reel|



- *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

Publication Order Number: **NTMFS4982NF/D** 

**1** 

© Semiconductor Components Industries, LLC, 2014 **February, 2014 − Rev. 3** 

**NTMFS4982NF** 

## **THERMAL RESISTANCE MAXIMUM RATINGS** 

|**THERMAL RESISTANCE MAXIMUM RATINGS**||||
|---|---|---|---|
|**Parameter**|**Symbol**|**Value**|**Unit**|
|Junction−to−Case (Drain)|R�JC|1.4|°C/W|
|Junction−to−Ambient – Steady State (Note 1)|R�JA|46.6||
|Junction−to−Ambient – Steady State (Note 2)|R�JA|84.1||
|Junction−to−Ambient − t�10 sec|R�JA|16.8||



1. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu. 

2. Surface−mounted on FR4 board using the minimum recommended pad size of 100 mm[2] . 

## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) 

|**ELECTRICAL CHARACTERISTICS**(TJ=|25°C unless|otherwise specified)|otherwise specified)|||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||||
|Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID= 1.0 mA||30|||V|
|Drain−to−Source Breakdown Voltage<br>Temperature Coefficient|V(BR)DSS/<br>TJ|ID= 10 mA, referenced to 25°C|||15||mV/°C|
|Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,<br>VDS= 24 V|TJ= 25°C|||500|�A|
|Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS=±20 V||||±100|nA|
|**ON CHARACTERISTICS**(Note 3)||||||||
|Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= 1.0 mA||1.0|1.7|2.2|V|
|Negative Threshold Temperature Coefficient|VGS(TH)/TJ|ID= 10 mA, referenced to 25°C|||5.0||mV/°C|
|Drain−to−Source On Resistance|RDS(on)|VGS= 10 V|ID= 25 A||0.95|1.3|m�|
|||VGS= 4.5 V|ID= 25 A||1.4|1.9||
|Forward Transconductance|gFS|VDS= 1.5 V, ID= 15 A|||60||S|
|**CHARGES AND CAPACITANCES**||||||||
|Input Capacitance|CISS|VGS= 0 V, f = 1 MHz, VDS= 15 V|||6000||pF|
|Output Capacitance|COSS||||2400|||
|Reverse Transfer Capacitance|CRSS||||160|||
|Total Gate Charge|QG(TOT)|VGS= 4.5 V, VDS= 15 V; ID= 25 A|||40||nC|
|Threshold Gate Charge|QG(TH)||||8.8|||
|Gate−to−Source Charge|QGS||||15|||
|Gate−to−Drain Charge|QGD||||12|||
|Total Gate Charge|QG(TOT)|VGS= 10 V, VDS= 15 V,<br>ID= 25 A|||84||nC|
|**SWITCHING CHARACTERISTICS**(Note 4)||||||||
|Turn−On Delay Time|td(ON)|VGS= 4.5 V, VDS= 15 V,<br>ID= 25 A, RG= 3�|||17.2||ns|
|Rise Time|tr||||31.6|||
|Turn−Off Delay Time|td(OFF)||||34.3|||
|Fall Time|tf||||12|||
|Turn−On Delay Time|td(ON)|VGS= 10 V, VDS= 15 V,<br>ID= 25 A, RG= 3�|||12.7||ns|
|Rise Time|tr||||20.4|||
|Turn−Off Delay Time|td(OFF)||||38.6|||
|Fall Time|tf||||11.3|||



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

3. Pulse Test: pulse width � 300 � s, duty cycle � 2%. 

4. Switching characteristics are independent of operating junction temperatures. 

**http://onsemi.com** 

**2** 

## **NTMFS4982NF** 

## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) 

|**ELECTRICAL CHARACTERISTICS**(TJ=|25°C unless|otherwise specified)|otherwise specified)|||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**|
|**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||||
|Forward Diode Voltage|VSD|VGS= 0 V,<br>IS= 2 A|TJ= 25°C||0.4|0.7|V|
||||TJ= 125°C||0.32|||
|Reverse Recovery Time|tRR|VGS= 0 V, dIS/dt = 100 A/�s,<br>IS= 25 A|||58||ns|
|Charge Time|ta||||29|||
|Discharge Time|tb||||29|||
|Reverse Recovery Charge|QRR||||71||nC|
|**PACKAGE PARASITIC VALUES**||||||||
|Source Inductance|LS|TA= 25°C|||0.65||nH|
|Drain Inductance|LD||||0.20|||
|Gate Inductance|LG||||1.5|||
|Gate Resistance|RG||||0.8||�|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

3. Pulse Test: pulse width � 300 � s, duty cycle � 2%. 

4. Switching characteristics are independent of operating junction temperatures. 

**http://onsemi.com** 

**3** 

**NTMFS4982NF** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [240 x 174] intentionally omitted <==**

**----- Start of picture text -----**<br>
200<br>180 V DS  = 5 V<br>160<br>140<br>120<br>100<br>80 T J  = 125 ° C<br>60<br>40 TJ = 25J = 25 = 25 ° C TJ = −55J = −55 = −55 ° C<br>20<br>0<br>1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>VGS, GATE−TO−SOURCE VOLTAGE (V)GS, GATE−TO−SOURCE VOLTAGE (V), GATE−TO−SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (A)<br>IDD<br>**----- End of picture text -----**<br>


**==> picture [491 x 589] intentionally omitted <==**

**----- Start of picture text -----**<br>
150 3.4 V<br>3.6 V to 10 V 180 V DS  = 5 V<br>135<br>160<br>120 3.2 V<br>140<br>105<br>120<br>90<br>3.0 V 100<br>75<br>60 80 T J  = 125 ° C<br>60<br>45 2.8 V<br>30 40 TJ = 25J = 25 = 25 ° C TJ = −55J = −55 = −55 ° C<br>2.6 V<br>15 20<br>2.4 V<br>0 0<br>0 1 2 3 4 5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)GS, GATE−TO−SOURCE VOLTAGE (V), GATE−TO−SOURCE VOLTAGE (V)<br>Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics<br>0.012 2.0E−03<br>I D  = 25 A TJ = 25 ° C<br>0.010 TJ = 25 ° C 1.75E−03<br>0.008 1.5E−03 VGS = 4.5 V<br>0.006 1.25E−03<br>VGS = 10 V<br>0.004 1.0E−03<br>0.002 7.5E−04<br>0 5.0E−04<br>2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 10 20 30 40 50 60 70 80 90 100 110 120<br>VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)<br>Figure 3. On−Resistance vs. VGS Figure 4. On−Resistance vs. Drain Current and<br>Gate Voltage<br>1.8 1E−01<br>1.7 ID = 20 A VGS = 0 V<br>1.6 VGS = 10 V<br>1.5 1E−02 TJ = 125 ° C<br>1.4<br>1.3<br>1.2<br>1E−03<br>1.1<br>1.0<br>0.9<br>0.8 1E−04 TJ = 25 ° C<br>0.7<br>0.6<br>0.5 1E−05<br>−50 −25 0 25 50 75 100 125 150 5 10 15 20 25 30<br>TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID IDD<br>) � ) �<br>, DRAIN−TO−SOURCE RESISTANCE ( , DRAIN−TO−SOURCE RESISTANCE (<br>DS(on) DS(on)<br>R R<br>, LEAKAGE (A)<br>, DRAIN−TO−SOURCE<br>IDSS<br>DS(on)<br>R RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br>


**Figure 6. Drain−to−Source Leakage Current vs. Voltage** 

**Figure 5. On−Resistance Variation with Temperature** 

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**4** 

**NTMFS4982NF** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [490 x 158] intentionally omitted <==**

**----- Start of picture text -----**<br>
8000 11<br>7000 V T JGS  = 25  = 0 V ° C 10 QT<br>Ciss 9<br>6000<br>8<br>5000 7<br>6<br>4000<br>5<br>3000 Coss 4 Qgs Qgd<br>2000 3 TJ = 25 ° C<br>2 V DD = 15 V<br>1000 VGS = 10 V<br>Crss 1 I D  = 25 A<br>0 0<br>0 5 10 15 20 25 0 10 20 30 40 50 60 70 80 90<br>C, CAPACITANCE (pF)<br>, GATE−TO−SOURCE VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


**==> picture [151 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>**----- End of picture text -----**<br>


**Figure 7. Capacitance Variation** 

**==> picture [117 x 10] intentionally omitted <==**

**----- Start of picture text -----**<br>
Qg, TOTAL GATE CHARGE (nC)<br>**----- End of picture text -----**<br>


**Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge** 

**==> picture [491 x 384] intentionally omitted <==**

**----- Start of picture text -----**<br>
10000 10<br>VDD = 15 V 9 V GS  = 0 V<br>ID = 10 A<br>8<br>1000 V GS  = 10 V<br>td(off) 7<br>6<br>t f<br>100 5<br>tr<br>td(on) 4 TJ = 25 ° C<br>3<br>10<br>2<br>1<br>1 0<br>1 10 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7<br>RG, GATE RESISTANCE ( � ) VSD, SOURCE−TO−DRAIN VOLTAGE (V)<br>Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current<br>vs. Gate Resistance<br>1000 130<br>10  � s 120 ID = 50 A<br>110<br>100 100  � s 100<br>90<br>10 1 ms 80<br>70<br>10 ms 60<br>1 VGS = 20 V 50<br>Single Pulse<br>TC = 25 ° C 40<br>30<br>0.1 RDS(on) Limit dc<br>20<br>Thermal Limit<br>Package Limit 10<br>0.01 0<br>0.1 1 10 100 25 50 75 100 125 150<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE ( ° C)<br>t, TIME (ns)<br>, SOURCE CURRENT (A)<br>IS<br>, DRAIN CURRENT (A)<br>ID , SINGLE PULSE DRAIN−TO−<br>AS<br>E<br>SOURCE AVALANCHE ENERGY (mJ)<br>**----- End of picture text -----**<br>


**Figure 11. Maximum Rated Forward Biased Safe Operating Area** 

**Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature** 

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**5** 

**NTMFS4982NF** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [491 x 174] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>Duty Cycle = 50%<br>10 20%<br>10%<br>5%<br>1 2%<br>1%<br>0.1<br>Single Pulse<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>PULSE TIME (sec)<br>C/W)<br>°<br>R(t) (<br>**----- End of picture text -----**<br>


**Figure 13. Thermal Response** 

**http://onsemi.com** 

**6** 

**NTMFS4982NF** 

## **PACKAGE DIMENSIONS** 

**==> picture [470 x 425] intentionally omitted <==**

**----- Start of picture text -----**<br>
DFN5 5x6, 1.27P<br>(SO−8FL)<br>CASE 488AA<br>2 X ISSUE H NOTES:<br>1. DIMENSIONING AND TOLERANCING PER<br>0.20 C ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETER.<br>ft D A 3. DIMENSION D1 AND E1 DO NOT INCLUDE<br>MOLD FLASH PROTRUSIONS OR GATE<br>2 B 2 X BURRS.<br>D1 MILLIMETERS<br>0.20 C<br>DIM MIN NOM MAX<br>== A 0.90 1.00 1.10<br>A1 0.00 −−− 0.05<br>E1 4 X b 0.33 0.41 0.51<br>c 0.23 0.28 0.33<br>E D 5.15 BSC<br>2 D1 4.70 4.90 5.10<br>c D2 3.80 4.00 4.20<br>A1 E 6.15 BSC<br>E1 5.70 5.90 6.10<br>1 2 3 4 E2 3.45 3.65 3.85<br>e 1.27 BSC<br>TOP VIEW G 0.51 0.61 0.71<br>3 X C K 1.20 1.35 1.50<br>0.10 C e SEATINGPLANE L1L 0.510.05 0.610.17 0.710.20<br>: —— M 3.00 3.40 3.80<br>~. [|] A rE DETAIL A = 0  −−− 12<br>0.10 C STYLE 1:<br>PIN 1. SOURCE<br>=, SIDE VIEW DETAIL A SOLDERING FOOTPRINT* =  2. 3. SOURCESOURCE<br> 4. GATE<br>3X 4X  5. DRAIN<br>8X b 1.270 0.750<br>4X<br>0.10 C A B 1.000<br>0.05 c L e/2<br>AP 1 tee 4 0.965 dbo “ L<br>K<br>1.330 2X<br>0.905<br>E2 2X<br>PIN 5 M 0.495 4.530<br>(EXPOSED PAD) L1<br>3.200<br>0.475<br>G D2<br>2X<br>BOTTOM VIEW 1.530<br>mah Li 4.560  He<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

**ON Semiconductor** and          are registered trademarks of Semiconductor Components Industries, LLC (SCILLC).  SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf.  SCILLC reserves the right to make changes without further notice to any products herein.  SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time.  All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.  SCILLC does not convey any license under its patent rights nor the rights of others.  SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.  Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.  SCILLC is an Equal Opportunity/Affirmative Action Employer.  This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

**LITERATURE FULFILLMENT** : **N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Japan Customer Focus Center** For additional information, please contact your local **Email** : orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative 

## **LITERATURE FULFILLMENT** : 

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**NTMFS4982NF/D** 

**7** 



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---

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