# Power MOSFET, N Channel, 30 V, 38 A, 0.0057 ohm, SOIC, Surface Mount ![Product image](https://novapart.co/image/farnell:2845384/) **URL**: https://novapart.co/products/NTMFS4927NT1G/power-mosfet-n-channel-30-v-38-a-00057-ohm-soic **SKU**: NTMFS4927NT1G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.1050 **Stock**: 10+ ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 8Pins | | Channel Type | N Channel | | Power Dissipation | 20.8W | | Transistor Mounting | Surface Mount | | Transistor Polarity | N Channel | | Power Dissipation Pd | 20.8W | | Rds(On) Test Voltage | 10V | | On Resistance Rds(On) | 0.0057ohm | | Transistor Case Style | SOIC | | Drain Source Voltage Vds | 30V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 38A | | Drain Source On State Resistance | 0.0057ohm | | Gate Source Threshold Voltage Max | 2.2V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2845384/) ## NTMFS4927N, NTMFS4927NC ## Power MOSFET **30 V, 38 A, Single N−Channel, SO−8 FL Features** - Low R to Minimize Conduction Losses DS(on) - Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses **http://onsemi.com** • Optimized for 5 V, 12 V Gate Drives • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS **V(BR)DSS RDS(ON) MAX ID MAX** Compliant 7.3 m @ 10 V **Applications** 30 V 38 A • CPU Power Delivery ~~ae~~ 12.0 m @ 4.5 V • DC−DC Converters **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise stated) D (5,6) **Parameter Symbol Value Unit** Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ± 20 V G (4) Continuous Drain TA = 25 ° C ID 13.6 A ~~SES~~ Current R(Note 1) JA TA = 100 ° C 8.6 ~~B~~ S (1,2,3) Power Dissipation TA = 25 ° C PD 2.70 W **N−CHANNEL MOSFET** R JA (Note 1) ~~ee~~ Continuous Drain ee ~~e~~ TA = 25 ° C ~~e~~ ID ~~**e**~~ 20.4 ~~ee~~ A **MARKING** Current R(Note 1) JA ≤ 10 s TA = 100 ° C 12.9 **DIAGRAM** Power Dissipation TA = 25 ° C PD 6.04 W D R JA ≤ 10 s (Note 1) Steady 1 S D ~~ee|~~ Continuous DrainCurrent R(Note 2) JA State ee ~~eeE~~ TTAA = 100 = 25 °° CC e ID **e** ~~ee~~ 7.95.0 A **SO−8 FLAT LEADCASE 488AASTYLE 1** GSS AYWZZ4927N ! D Power Dissipation TA = 25 ° C PD 0.92 W D R JA (Note 2) 4927N = Specific Device Code ~~a~~ Continuous Drain ee ~~ee~~ TC = 25 ° C ID 38 A A = Assembly Location ~~co)~~ Current R(Note 1) JC ~~FTE"~~ TC =100 ° C ee 24 ~~ee~~ YW = Year= Work Week Power Dissipation TC = 25 ° C PD 20.8 W ZZ = Lot Traceability ~~Sietee~~ RPulsed DrainJC (Note 1) TA ~~ee~~ = 25 ° C, tp = 10 s ~~ee ee~~ IDM ~~ee~~ 160 A ~~=~~ Current **ORDERING INFORMATION** Current Limited by Package TA = 25 ° C IDmax 100 A ~~pt~~ Operating Junction and Storage ~~Tt~~ TJ, −55 to ° C **Device Package Shipping**[†] Temperature TSTG +150 NTMFS4927NT1G SO−8 FL 1500 / Source Current (Body Diode) IS 21 A NTMFS4927NCT1G (Pb−Free) Tape & Reel Drain to Source DV/DT dV/dt 6.0 V/ns NTMFS4927NT3G SO−8 FL 5000 / ~~ee~~ Single Pulse Drain−to−Source AvalancheEnergy (TJ = 25 ° C, VDD = 24 V, VGS = 20 V, ~~ee~~ EAS ~~eee~~ 20 mJ ~~——~~ †For information on tape and reel specifications,NTMFS4927NCT3G (Pb−Free) Tape & Reel ~~ee~~ IL = 20 Apk, L = 0.1 mH, RG = 25 ) including part orientation and tape sizes, please Lead Temperature for Soldering Purposes TL 260 ~~ae~~ ° C refer to our Tape and Reel Packaging Specifications ~~ee~~ (1/8 ″ from case for 10 s) ~~ee ee~~ Brochure, BRD8011/D. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. Publication Order Number: **NTMFS4927N/D** **1** © Semiconductor Components Industries, LLC, 2012 **June, 2012 − Rev. 8** **NTMFS4927N, NTMFS4927NC** ## **THERMAL RESISTANCE MAXIMUM RATINGS** |**THERMAL RESISTANCE MAXIMUM RATINGS**|||| |---|---|---|---| |**Parameter**|**Symbol**|**Value**|**Unit**| |Junction−to−Case (Drain)|R�JC|6.0|°C/W| |Junction−to−Ambient – Steady State (Note 3)|R�JA|46.3|| |Junction−to−Ambient – Steady State (Note 4)|R�JA|136.2|| |Junction−to−Ambient – (t≤10 s) (Note 3)|R�JA|20.7|| 3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 4. Surface−mounted on FR4 board using the minimum recommended pad size. **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) |**ELECTRICAL CHARACTERISTICS**(TJ=|25°C unless|otherwise specified)|otherwise specified)||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||||| |Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID= 250�A||30|||V| |Drain−to−Source Breakdown Voltage
(transient)|V(BR)DSSt|VGS = 0 V, ID(aval)= 8.4 A,
Tcase= 25°C, ttransient= 100 ns||34|||V| |Drain−to−Source Breakdown Voltage
Temperature Coefficient|V(BR)DSS/
TJ||||24||mV/°C| |Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,
VDS= 24 V|TJ= 25°C|||1.0|�A| ||||TJ= 125°C|||10|| |Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS|=±20 V|||±100|nA| |**ON CHARACTERISTICS**(Note 5)|||||||| |Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID=|250�A|1.32|1.6|2.2|V| |Negative Threshold Temperature Coefficient|VGS(TH)/TJ||||3.7||mV/°C| |Drain−to−Source On Resistance|RDS(on)|VGS= 10 V|ID= 30 A||5.8|7.3|m�| ||||ID= 15 A||5.7||| |||VGS= 4.5 V|ID= 30 A||9.6|12|| ||||ID= 15 A||9.2||| |Forward Transconductance|gFS|VDS= 1.5 V, ID= 15 A|||40||S| |**CHARGES, CAPACITANCES & GATE RESISTANCE**|||||||| |Input Capacitance|CISS|VGS= 0 V, f = 1 MHz, VDS= 15 V|||913||pF| |Output Capacitance|COSS||||366||| |Reverse Transfer Capacitance|CRSS||||108||| |Capacitance Ratio|CRSS/
CISS|VGS= 0 V, VDS= 15 V, f = 1 MHz|||0.118|0.237|| |Total Gate Charge|QG(TOT)|VGS= 4.5 V, VDS= 15 V; ID= 30 A|||8.0||nC| |Threshold Gate Charge|QG(TH)||||1.6||| |Gate−to−Source Charge|QGS||||3.1||| |Gate−to−Drain Charge|QGD||||3.1||| |Total Gate Charge|QG(TOT)|VGS= 10 V, VDS= 15 V; ID= 30 A|||16.0||nC| |**SWITCHING CHARACTERISTICS**(Note 6)|||||||| |Turn−On Delay Time|td(ON)|VGS= 4.5 V, VDS= 15 V,
ID= 15 A, RG= 3.0�|||9.2||ns| |Rise Time|tr||||25.5||| |Turn−Off Delay Time|td(OFF)||||14.0||| |Fall Time|tf||||4.4||| 5. Pulse Test: pulse width � 300 � s, duty cycle � 2%. 6. Switching characteristics are independent of operating junction temperatures. **http://onsemi.com** **2** ## **NTMFS4927N, NTMFS4927NC** ## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) |**ELECTRICAL CHARACTERISTICS**(TJ=|25°C unless|otherwise specified)|otherwise specified)||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**| |**SWITCHING CHARACTERISTICS**(Note 6)|||||||| |Turn−On Delay Time|td(ON)|VGS= 10 V, VDS= 15 V,
ID= 15 A, RG= 3.0�|||6.5||ns| |Rise Time|tr||||21.0||| |Turn−Off Delay Time|td(OFF)||||18.0||| |Fall Time|tf||||3.0||| |**DRAIN−SOURCE DIODE CHARACTERISTICS**|||||||| |Forward Diode Voltage|VSD|VGS= 0 V,
IS= 30 A|TJ= 25°C||0.87|1.1|V| ||||TJ= 125°C||0.76||| |Reverse Recovery Time|tRR|VGS= 0 V, dIS/dt = 100 A/�s,
IS= 30 A|||21.4||ns| |Charge Time|ta||||10.5||| |Discharge Time|tb||||10.9||| |Reverse Recovery Charge|QRR||||8.4||nC| |**PACKAGE PARASITIC VALUES**|||||||| |Source Inductance|LS|TA= 25°C|||1.00||nH| |Drain Inductance|LD||||0.005||nH| |Gate Inductance|LG||||1.84||nH| |Gate Resistance|RG||||0.90|2.2|�| 5. Pulse Test: pulse width � 300 � s, duty cycle � 2%. 6. Switching characteristics are independent of operating junction temperatures. **http://onsemi.com** **3** **NTMFS4927N, NTMFS4927NC** ## **TYPICAL CHARACTERISTICS** **==> picture [490 x 591] intentionally omitted <==** **----- Start of picture text -----**
100 100
10 V °
4.5 V TJ = −55 C
90 90
80 TJ = 25 ° C 4.0 V 80 TJ = 25 ° C
70 70
60 3.5 V 60 VDS = 10 V TJ = 125 ° C
50 50
40 40
3.0 V
30 30
20 20
10 VGS = 2.5 V 10
0 0
0 1 2 3 4 5 1 2 3 4 5
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
0.015 0.019
0.014 ID = 30 A 0.017 T = 25 ° C
0.013
0.015
0.012
0.011 0.013
0.010 0.011 V GS = 4.5 V
0.009
0.008 0.009
0.007 0.007
VGS = 10 V
0.006
0.005
0.005
0.004 0.003
3 4 5 6 7 8 9 10 10 20 30 40 50 60 70 80 90 100
VGS (V) ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. VGS Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.7 10,000
1.61.5 VIDGS = 30 A = 10 V TJ = 150 ° C
1.4
1,000 TJ = 125 ° C
1.3
1.2
1.1
1.0
100
0.9 TJ = 85 ° C
0.8
0.7 VGS = 0 V
0.6 10
−50 −25 0 25 50 75 100 125 150 5 10 15 20 25 30
TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
, DRAIN CURRENT (A) , DRAIN CURRENT (A)
ID ID
) � ) �
, DRAIN−TO−SOURCE RESISTANCE ( , DRAIN−TO−SOURCE RESISTANCE (
DS(on) DS(on)
R R
, LEAKAGE (nA)
, DRAIN−TO−SOURCE
IDSS
DS(on)
R RESISTANCE (NORMALIZED)
**----- End of picture text -----**
**Figure 5. On−Resistance Variation with Temperature** **==> picture [187 x 20] intentionally omitted <==** **----- Start of picture text -----**
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
**----- End of picture text -----**
**http://onsemi.com** **4** **NTMFS4927N, NTMFS4927NC** ## **TYPICAL CHARACTERISTICS** **==> picture [490 x 591] intentionally omitted <==** **----- Start of picture text -----**
1200 11
T J = 25 ° C 10 QT
1000 Ciss VGS = 0 V 9
8
800
7
6
600
Coss 5
400 4 Qgs Qgd TJ = 25J = 25 = 25 ° C
3
2 V GS = 10 V
200 C rss VDD = 15 VDD = 15 V = 15 V
1
ID = 30 AD = 30 A = 30 A
0 0
0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17
VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000 30
VGS = 0 V
25
VGS = 10 V
100 VIDDD = 15 A = 15 V td(off) 20
tf
tr 15
10 td(on) 10
TJ = 125 ° C TJ = 25 ° C
5
1 0
1 10 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
RG, GATE RESISTANCE ( � ) VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current
vs. Gate Resistance
1000 20
18 I D = 20 A
100 16
10 � s 14
10 12
100 � s
10
1 ms
1 0 V < VGS < 10 V 10 ms 8
Single Pulse
TC = 25 ° C 6
0.1 RDS(on) Limit dc 4
Thermal Limit
2
Package Limit
0.01 0
0.01 0.1 1 10 100 25 50 75 100 125 150
VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE ( ° C)
C, CAPACITANCE (pF)
, GATE−TO−SOURCE VOLTAGE (V)
GS
V
t, TIME (ns)
, SOURCE CURRENT (A)
IS
, DRAIN CURRENT (A)
ID , SINGLE PULSE DRAIN−TO−
AS
E
SOURCE AVALANCHE ENERGY (mJ)
**----- End of picture text -----**
**==> picture [240 x 156] intentionally omitted <==** **----- Start of picture text -----**
11
QT
10
9
8
7
6
5
4 Qgs Qgd TJ = 25J = 25 = 25 ° C
3
2 V GS = 10 V
VDD = 15 VDD = 15 V = 15 V
1
ID = 30 AD = 30 A = 30 A
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17
, GATE−TO−SOURCE VOLTAGE (V)
GS
V
**----- End of picture text -----**
**Figure 11. Maximum Rated Forward Biased Safe Operating Area** **Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature** **http://onsemi.com** **5** **NTMFS4927N, NTMFS4927NC** ## **TYPICAL CHARACTERISTICS** **==> picture [480 x 176] intentionally omitted <==** **----- Start of picture text -----**
100
D = 0.5
0.2
10
0.1
0.05
0.02
1
0.01
0.1
SINGLE PULSE
0.01
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t, TIME (s)
r(t)C/W)
( °
**----- End of picture text -----**
**Figure 13. Thermal Response** **http://onsemi.com** **6** **NTMFS4927N, NTMFS4927NC** ## **PACKAGE DIMENSIONS** **==> picture [475 x 581] intentionally omitted <==** **----- Start of picture text -----**
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE G
2 X NOTES:
1. DIMENSIONING AND TOLERANCING PER
0.20 C ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
a D A 3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
2 B 2 X BURRS.
D1 MILLIMETERS
0.20 C
4 DIM MIN NOM MAX
A 0.90 1.00 1.10
A1 0.00 −−− 0.05
E1 4 X b 0.33 0.41 0.51
c 0.23 0.28 0.33
E D 5.15 BSC
2 D1 4.50 4.90 5.10
c D2 3.50 −−− 4.22
a A1 E 6.15 BSC
HH f ec t —= E1 5.50 5.80 6.10
P 1 2 3 T 4 ify EEE E2 3.45 −−− 4.30
e 1.27 BSC
TOP VIEW G 0.51 0.61 0.71
3 X C K 1.20 1.35 1.50
0.10 C S e h SEATINGPLANE = L1L 0.510.05 0.610.17 0.710.20
M 3.00 3.40 3.80
A DETAIL A 0 −−− 12
a ae
0.10 C STYLE 1:
PIN 1. SOURCE
SF SIDE VIEW DETAIL A SOLDERING FOOTPRINT* 2. 3. SOURCESOURCE
4. GATE
3X 4X 5. DRAIN
8X b 1.270 0.750
4X
0.10 C A B 1.000
0.05 c L e/2
1 fe 4 0.965 b oo ts
K
1.330 2X
ft an a 0.905
E2 2X
PIN 5 M 0.495 4.530
(EXPOSED PAD) L1
3.200
0.475
G ac D2 and
2X
BOTTOM VIEW 1.530
rah Lo 4.560 eS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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**----- End of picture text -----**
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