# Power MOSFET, N Channel, 30 V, 91 A, 0.0037 ohm, SOIC, Surface Mount ![Product image](https://novapart.co/image/farnell:1908097/) **URL**: https://novapart.co/products/NTMFS4923NET1G./power-mosfet-n-channel-30-v-91-a-00037-ohm-soic **SKU**: NTMFS4923NET1G. **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.3780 **Stock**: 10+ ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 5Pins | | Channel Type | N Channel | | Power Dissipation | 48W | | Transistor Mounting | Surface Mount | | Transistor Polarity | N Channel | | Power Dissipation Pd | 48W | | Rds(On) Test Voltage | 4.5V | | On Resistance Rds(On) | 0.0037ohm | | Transistor Case Style | SOIC | | Drain Source Voltage Vds | 30V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 91A | | Drain Source On State Resistance | 0.0037ohm | | Gate Source Threshold Voltage Max | 1.63V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:1908097/) NTMFS4923NE ## Power MOSFET ## **30 V, 91 A, Single N−Channel, SO−8 FL** ## **Features** - Low R to Minimize Conduction Losses DS(on) - Low Capacitance to Minimize Driver Losses - Optimized Gate Charge to Minimize Switching Losses - Dual Sided Cooling Capability - These Devices are Pb−Free, Halogen Free and are RoHS Compliant ## **Applications** - CPU Power Delivery, DC−DC Converters **==> picture [280 x 450] intentionally omitted <==** **----- Start of picture text -----**
MAXIMUM RATINGS (TJ = 25 ° C unless otherwise stated)
Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 30 V
Gate−to−Source Voltage VGS ± 20 V
Continuous Drain TA = 25 ° C ID 21.4 A
Current R(Note 1) JA TA = 100 ° C 13.5
ESTE Power Dissipation TA = 25 ° C PD 2.63 W
R JA (Note 1)
ee Continuous Drain ee TA = 25 ee ° C ee ID 38.8 ee A
ES Current R10 s (Note 1)JA ≤ TA = 100 ° C 24.5
Power Dissipation TA = 25 ° C PD 8.7 W
R JA ≤ 10 s
ee (Note 1) SteadyState
Continuous Drain TA = 25 ° C ID 12.7 A
Current R(Note 2) JA TA = 100 ° C 8.0
Power Dissipation TA = 25 ° C PD 0.93 W
R JA (Note 2)
ee Continuous Drain ee TC = 25 ee ° C ee ID 91 ee A
| Current R(Note 1) JC ES TC = 85 ° C 66
Power Dissipation TC = 25 ° C PD 48 W
oeee RPulsed DrainJC (Note 1) T ee A = 25 ° C, tp ee = 10 s ee IDM 275 ee A
Current
Current Limited by Package TA = 25 ° C IDmax 100 A
pH} Operating Junction and Storage ttt TJ, −40 to ° C
Temperature TSTG +150
eeee eee
Source Current (Body Diode) IS 44 A
Drain to Source DV/DT dV/dt 6 V/ns
Single Pulse Drain−to−Source Avalanche EAS 110 mJ
Energy TJ = 25 ° C, VDD = 24 V, VGS = 10 V,
IL = 47 Apk, L = 0.1 mH, RG = 25
TT Lead Temperature for Soldering Purposes TL 260 ° C
ee (1/8 ″ from case for 10 s) ee ee
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
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**http://onsemi.com** **==> picture [192 x 330] intentionally omitted <==** **----- Start of picture text -----**
V(BR)DSS RDS(ON) MAX ID MAX
3.3 m @ 10 V 91 A
30 V
4.8 m @ 4.5 V 75 A
=
D (5,6)
G (4)
& S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAM
D
1 S ee D
4923NE
S
SO−8 FLAT LEAD
AYWZZ
S
CASE 488AA
STYLE 1 G D
D
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
**----- End of picture text -----**
**==> picture [190 x 122] intentionally omitted <==** **----- Start of picture text -----**
ORDERING INFORMATION
Device Package Shipping [†]
NTMFS4923NET1G SO−8 FL 1500 /
(Pb−Free) Tape & Reel
NTMFS4923NET3G SO−8 FL 5000 /
(Pb−Free) Tape & Reel
aon †For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
**----- End of picture text -----**
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. Publication Order Number: **NTMFS4923NE/D** **1** © Semiconductor Components Industries, LLC, 2012 **May, 2012 − Rev. 1** **NTMFS4923NE** ## **THERMAL RESISTANCE MAXIMUM RATINGS** |**THERMAL RESISTANCE MAXIMUM RATINGS**|||| |---|---|---|---| |**Parameter**|**Symbol**|**Value**|**Unit**| |Junction−to−Case (Drain)|R�JC|2.6|°C/W| |Junction−to−Ambient – Steady State (Note 3)|R�JA|47.5|| |Junction−to−Ambient – Steady State (Note 4)|R�JA|134.8|| |Junction−to−Ambient – (t≤10 s) (Note 3)|R�JA|14.4|| |Junction−to−Top|R�JT|8.3|| 3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 4. Surface−mounted on FR4 board using the minimum recommended pad size. ## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) |**ELECTRICAL CHARACTERISTICS**(TJ=|25°C unless|otherwise specified)|otherwise specified)||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||||| |Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID=|250�A|30|||V| |Drain−to−Source Breakdown Voltage
Temperature Coefficient|V(BR)DSS/
TJ||||15||mV/°C| |Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,
VDS= 24 V|TJ= 25°C|||1.0|�A| ||||TJ= 125°C|||10|| |Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS|=±20 V|||±100|nA| |**ON CHARACTERISTICS**(Note 5)|||||||| |Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID=|250�A|1.2|1.63|2.0|V| |Negative Threshold Temperature Coefficient|VGS(TH)/TJ||||4.0||mV/°C| |Drain−to−Source On Resistance|RDS(on)|VGS= 10 V|ID= 30 A||2.7|3.3|m�| ||||ID= 15 A||2.7||| |||VGS= 4.5 V|ID= 30 A||3.7|4.8|| ||||ID= 15 A||3.7||| |Forward Transconductance|gFS|VDS= 1.5 V, ID= 15 A|||32||S| |**CHARGES, CAPACITANCES & GATE RESISTANCE**|||||||| |Input Capacitance|CISS|VGS= 0 V, f = 1 MHz, VDS= 15 V|||3579|4850|pF| |Output Capacitance|COSS||||1264|1710|| |Reverse Transfer Capacitance|CRSS||||39|59|| |Total Gate Charge|QG(TOT)|VGS= 4.5 V, VDS= 15 V; ID= 30 A|||22||nC| |Threshold Gate Charge|QG(TH)||||5.6||| |Gate−to−Source Charge|QGS||||10.2||| |Gate−to−Drain Charge|QGD||||3.0||| |Total Gate Charge|QG(TOT)|VGS= 10 V, VDS= 15 V; ID= 30 A|||49.4||nC| |**SWITCHING CHARACTERISTICS**(Note 6)|||||||| |Turn−On Delay Time|td(ON)|VGS= 4.5 V, VDS= 15 V,
ID= 15 A, RG= 3.0�|||16.3||ns| |Rise Time|tr||||20||| |Turn−Off Delay Time|td(OFF)||||27.5||| |Fall Time|tf||||6.6||| 5. Pulse Test: pulse width � 300 � s, duty cycle � 2%. 6. Switching characteristics are independent of operating junction temperatures. **http://onsemi.com** **2** ## **NTMFS4923NE** ## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) |**ELECTRICAL CHARACTERISTICS**(TJ=|25°C unless|otherwise specified)|otherwise specified)||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**| |**SWITCHING CHARACTERISTICS**(Note 6)|||||||| |Turn−On Delay Time|td(ON)|VGS= 10 V, VDS= 15 V,
ID= 15 A, RG= 3.0�|||11.2||ns| |Rise Time|tr||||18.7||| |Turn−Off Delay Time|td(OFF)||||28.3||| |Fall Time|tf||||12.1||| |**DRAIN−SOURCE DIODE CHARACTERISTICS**|||||||| |Forward Diode Voltage|VSD|VGS= 0 V,
IS= 30 A|TJ= 25°C||0.85|1.1|V| ||||TJ= 125°C||0.72||| |Reverse Recovery Time|tRR|VGS= 0 V, dIS/dt = 100 A/�s,
IS= 30 A|||44.4||ns| |Charge Time|ta||||21.6||| |Discharge Time|tb||||22.8||| |Reverse Recovery Charge|QRR||||45||nC| |**PACKAGE PARASITIC VALUES**|||||||| |Source Inductance|LS|TA= 25°C|||0.65||nH| |Drain Inductance|LD||||0.005||nH| |Gate Inductance|LG||||1.84||nH| |Gate Resistance|RG||||1.1|2.0|�| 5. Pulse Test: pulse width � 300 � s, duty cycle � 2%. 6. Switching characteristics are independent of operating junction temperatures. **http://onsemi.com** **3** **NTMFS4923NE** ## **TYPICAL CHARACTERISTICS** **==> picture [491 x 591] intentionally omitted <==** **----- Start of picture text -----**
180 160
160 7 V10 V 4.2 V VGS = 4.0 V TJ = 25 ° C 140 VDS = 10 V
140 3.8 V
120
4.5 3.6 V
120
100
100 3.4 V
80
80 3.2 V TJ = 25 ° C
60
60
3.0 V
40
40 2.8 V TJ = 125 ° C
20 2.6 V 2.4 V 20 TJ = −55 ° C
0 0
0 1 2 3 4 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
0.014 0.0050
0.013 I D = 30 A 0.0048 TJ = 25 ° C
0.012 TJ = 25 ° C 0.0046
0.0044
0.011
0.0042 VGS = 4.5 V
0.010 0.0040
0.009 0.0038
0.0036
0.008
0.0034
0.007 0.0032
0.006 0.0030
0.005 0.0028 VGS = 10 V
0.0026
0.004
0.0024
0.003 0.0022
0.002 0.0020
2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 20 40 60 80 100 120 140 160
VGS (V) ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. VGS Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.9 10,000
1.8 ID = 30 A VGS = 0 V
1.7 VGS = 10 V TJ = 150 ° C
1.6
1.5
1.4 1000 TJ = 125 ° C
1.3
1.2
1.1 TJ = 85 ° C
1.0
100
0.9
0.8
0.7
0.6
0.5 10
−50 −25 0 25 50 75 100 125 150 5 10 15 20 25 30
TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
, DRAIN CURRENT (A) , DRAIN CURRENT (A)
ID ID
)
� )
, DRAIN−TO−SOURCE RESISTANCE ( �
, DRAIN−TO−SOURCE RESISTANCE (
DS(on)
R DS(on)
R
, LEAKAGE (nA)
, DRAIN−TO−SOURCE RES- IDSS
ISTANCE (NORMALIZED)
DS(on)
R
**----- End of picture text -----**
**Figure 5. On−Resistance Variation with Temperature** **Figure 6. Drain−to−Source Leakage Current vs. Voltage** **http://onsemi.com** **4** **NTMFS4923NE** ## **TYPICAL CHARACTERISTICS** **==> picture [243 x 591] intentionally omitted <==** **----- Start of picture text -----**
4500
VGS = 0 V
4000 Ciss TJ = 25 ° C
3500
3000
2500
2000
1500 Coss
1000
500
0 Crss
0 5 10 15 20 25 30
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
1000
VIDDD = 15 A = 15 V td(off)
VGS = 10 V
100 tf
tr
td(on)
10
1
1 10 100
RG, GATE RESISTANCE ( � )
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
100
10 � s
100 � s
10
1 ms
10 ms
1 0 ≤ VGS ≤ 20 V
Single Pulse
TC = 25 ° C
0.1 RDS(on) Limit
Thermal Limit
dc
Package Limit
0.01
0.01 0.1 1 10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
t, TIME (ns)
, DRAIN CURRENT (A)
ID
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**Figure 11. Maximum Rated Forward Biased Safe Operating Area** **==> picture [239 x 174] intentionally omitted <==** **----- Start of picture text -----**
11
10 QT
9
8
7
6
5
Qgd
4
Qgs TJ = 25 ° C
3
VDD = 15 V
2 VGS = 10 V
1 ID = 30 A
0
0 5 10 15 20 25 30 35 40 45 50
Qg, TOTAL GATE CHARGE (nC)
, GATE−TO−SOURCE VOLTAGE (V)
GS
V
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**Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge** **==> picture [245 x 382] intentionally omitted <==** **----- Start of picture text -----**
30
25 VGS = 0 V
20
TJ = 125 ° C
15
10
TJ = 25 ° C
5
0
0.4 0.5 0.6 0.7 0.8 0.9 1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
130
120 ID = 29 A
110
100
90
80
70
60
50
40
30
20
10
0
25 50 75 100 125 150
TJ, STARTING JUNCTION TEMPERATURE ( ° C)
, SOURCE CURRENT (A)
IS
, SINGLE PULSE DRAIN−TO−
AS
E
SOURCE AVALANCHE ENERGY (mJ)
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**Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature** **http://onsemi.com** **5** **NTMFS4923NE** ## **TYPICAL CHARACTERISTICS** **==> picture [491 x 173] intentionally omitted <==** **----- Start of picture text -----**
1000
100 Duty Cycle = 50%
20%
10%
10 5%
2%
1 1%
0.1
Single Pulse
0.01
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
PULSE TIME (sec)
C/W)
°
R(t) (
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**Figure 13. Thermal Response** **==> picture [245 x 172] intentionally omitted <==** **----- Start of picture text -----**
70
60
50
40
30
20
10
0
0 10 20 30 40 50 60 70 80 90 100
ID (A)
GFS (S)
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**Figure 14. GFS vs. ID** **http://onsemi.com** **6** **NTMFS4923NE** ## **PACKAGE DIMENSIONS** **==> picture [475 x 582] intentionally omitted <==** **----- Start of picture text -----**
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE G
2 X NOTES:
1. DIMENSIONING AND TOLERANCING PER
0.20 C ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
a D A 3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
2 B 2 X BURRS.
D1 MILLIMETERS
0.20 C
4 DIM MIN NOM MAX
A 0.90 1.00 1.10
A1 0.00 −−− 0.05
E1 4 X b 0.33 0.41 0.51
c 0.23 0.28 0.33
E D 5.15 BSC
2 D1 4.50 4.90 5.10
c D2 3.50 −−− 4.22
a A1 E 6.15 BSC
HH f ec t —= E1 5.50 5.80 6.10
P 1 2 3 T 4 ify EEE E2 3.45 −−− 4.30
e 1.27 BSC
TOP VIEW G 0.51 0.61 0.71
3 X C K 1.20 1.35 1.50
0.10 C S e h SEATINGPLANE = L1L 0.510.05 0.610.17 0.710.20
M 3.00 3.40 3.80
A DETAIL A 0 −−− 12
a ae
0.10 C STYLE 1:
PIN 1. SOURCE
SF SIDE VIEW DETAIL A SOLDERING FOOTPRINT* 2. 3. SOURCESOURCE
4. GATE
3X 4X 5. DRAIN
8X b 1.270 0.750
4X
0.10 C A B 1.000
0.05 c L e/2
1 fe 4 0.965 b oo ts
K
1.330 2X
ft an a 0.905
E2 2X
PIN 5 M 0.495 4.530
(EXPOSED PAD) L1
3.200
0.475
G ac D2 and
2X
BOTTOM VIEW 1.530
rah Lo 4.560 eS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
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**----- End of picture text -----**
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