# Power MOSFET, N Channel, 30 V, 115 A, 0.0022 ohm, DFN, Surface Mount ![Product image](https://novapart.co/image/farnell:2774825/) **URL**: https://novapart.co/products/NTMFS4845NT1G/power-mosfet-n-channel-30-v-115-a-00022-ohm-dfn **SKU**: NTMFS4845NT1G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.5320 **Stock**: 10+ ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 5Pins | | Channel Type | N Channel | | Power Dissipation | 62.5W | | Transistor Mounting | Surface Mount | | Transistor Polarity | N Channel | | Power Dissipation Pd | 62.5W | | Rds(On) Test Voltage | 11.5V | | On Resistance Rds(On) | 0.0022ohm | | Transistor Case Style | DFN | | Drain Source Voltage Vds | 30V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 115A | | Drain Source On State Resistance | 0.0022ohm | | Gate Source Threshold Voltage Max | 1.8V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2774825/) ## NTMFS4845N ## Power MOSFET ## **30 V, 115 A, Single N−Channel, SO−8FL** ## **Features** - Low R to Minimize Conduction Losses DS(on) - Low Capacitance to Minimize Driver Losses - Optimized Gate Charge to Minimize Switching Losses **http://onsemi.com** - Thermally Enhanced SO−8 Package - These are Pb−Free Devices **V(BR)DSS RDS(ON) MAX ID MAX Applications** • Refer to Application Note AND8195/D 30 V 2.9 m @ 10 V 115 A • CPU Power Delivery ~~ESa ee~~ 4.4 m @ 4.5 V ee • DC−DC Converters • Low Side Switching D (5,6) **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise stated) ~~ee~~ **Parameter Symbol** ~~es~~ **Value** ~~ee~~ **Unit** ~~es~~ Drain−to−Source Voltage ~~ee~~ VDSS 30 ~~es~~ V Gate−to−Source Voltage VGS ± 16 V G (4) Continuous Drain TA = 25 ° C ID 22 A ~~ef~~ Current R(Note 1) JA ~~eG~~ TA = 85 ° C 15.8 S (1,2,3) Power Dissipation TA = 25 ° C PD 2.27 W **N−CHANNEL MOSFET** R JA (Note 1) Continuous Drain TA = 25 ° C ID 35.5 A **MARKING** Current R10 sec JA TA = 85 ° C 25.6 **DIAGRAM** ~~J~~ Power Dissipation TA = 25 ° C PD 5.95 W D RContinuous DrainCurrent R(Note 2)JA, t 10 secJA SteadyState ~~ee~~ TTAA = 25 = 85 °° CC ID 13.79.9 A **SO−8 FLAT LEAD** 2 **CASE 488AA** 1 GSSS AYWZZ4845N DD Power Dissipation TA = 25 ° C PD 0.89 W **STYLE 1** D R JA (Note 2) ~~eees~~ Continuous DrainCurrent R(Note 1)Power DissipationJC ~~| ES~~ TTTCCC = 25 = 85 = 25 °°° CCC PIDD 62.511583 WA AYWZZ = Lot Traceability= Year= Assembly Location= Work Week ~~|~~ R JC (Note 1) Pulsed Drain tp=10 s TA = 25 ° C IDM 230 A Current ~~a~~ **ORDERING INFORMATION** ~~ee~~ Current limited by packageOperating Junction and Storage TA = 25 ~~es~~ ° C IDmaxTJ,pkg −55 to100 ° AC **Device Package Shipping**[†] Temperature TSTG +150 NTMFS4845NT1G SO−8FL 1500 / Source Current (Body Diode) IS 62 A (Pb−Free) Tape & Reel ~~a~~ Drain to Source dV/dt dV/dt 6 V/ns NTMFS4845NT3G SO−8FL 5000 / Single Pulse Drain−to−Source Avalanche EAS 228 mJ (Pb−Free) Tape & Reel ~~ee T+ ee~~ Energy (VLead Temperature for Soldering PurposesIL = 39 ApkDD, L = 0.3 mH, R = 50 V, VGS = 10 V,G = 25 TL 260 ~~ee~~ ° C †For information on tape and reel specifications,including part orientation and tape sizes, pleaserefer to our Tape and Reel Packaging Specifications ~~ee~~ (1/8” from case for 10 s) Brochure, BRD8011/D. ## **Applications** - Refer to Application Note AND8195/D - CPU Power Delivery - DC−DC Converters - Low Side Switching Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2012 **May, 2012 − Rev. 3** **NTMFS4845N/D** **NTMFS4845N** ## **THERMAL RESISTANCE MAXIMUM RATINGS** |**THERMAL RESISTANCE MAXIMUM RATINGS**|||| |---|---|---|---| |**Parameter**|**Symbol**|**Value**|**Unit**| |Junction−to−Case (Drain)|R�JC|2.0|°C/W| |Junction−to−Ambient – Steady State (Note 1)|R�JA|55.1|| |Junction−to−Ambient – Steady State (Note 2)|R�JA|140.1|| |Junction−to−Ambient − t�10 sec|R�JA|21|| 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) |**Parameter**|**Symbol**|**Test Condition**|**Test Condition**|**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---|---| |**OFF CHARACTERISTICS**|||||||| |Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID=|250�A|30|||V| |Drain−to−Source Breakdown Voltage
Temperature Coefficient|V(BR)DSS/
TJ||||25||mV/°C| |Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,
VDS= 24 V|TJ= 25°C|||1|�A| ||||TJ= 125°C|||10|| |Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS|=±16 V|||±100|nA| |**ON CHARACTERISTICS**(Note 3)|||||||| |Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID=|250�A|1.45|1.8|2.5|V| |Negative Threshold Temperature Coefficient|VGS(TH)/TJ||||5.2||mV/°C| |Drain−to−Source On Resistance|RDS(on)|VGS= 10 V to
11.5 V|ID= 30 A||2.2|2.9|m�| ||||ID= 15 A||2.2||| |||VGS= 4.5 V|ID= 30 A||3.4|4.4|| ||||ID= 15 A||3.4||| |Forward Transconductance|gFS|VDS= 1.5 V, ID= 30 A|||87||S| |**CHARGES AND CAPACITANCES**|||||||| |Input Capacitance|CISS|VGS= 0 V, f = 1 MHz, VDS= 12 V|||3720||pF| |Output Capacitance|COSS||||650||| |Reverse Transfer Capacitance|CRSS||||335||| |Total Gate Charge|QG(TOT)|VGS= 4.5 V, VDS= 15 V; ID= 30 A|||25.6|39|nC| |Threshold Gate Charge|QG(TH)||||3.2||| |Gate−to−Source Charge|QGS||||9.4||| |Gate−to−Drain Charge|QGD||||8.6||| |Total Gate Charge|QG(TOT)|VGS= 11.5 V, VDS= 15 V,
ID= 30 A|||62||nC| |**SWITCHING CHARACTERISTICS**(Note 4)|||||||| |Turn−On Delay Time|td(ON)|VGS= 4.5 V, VDS= 15 V, ID= 15 A,
RG= 3.0�|||20.5||ns| |Rise Time|tr||||48.4||| |Turn−Off Delay Time|td(OFF)||||28.9||| |Fall Time|tf||||12.2||| 3. Pulse Test: pulse width � 300 � s, duty cycle � 2%. 4. Switching characteristics are independent of operating junction temperatures. **http://onsemi.com** **2** **NTMFS4845N** ## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) |**ELECTRICAL CHARACTERISTICS**(TJ=|25°C unless|otherwise specified)|otherwise specified)||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**| |**SWITCHING CHARACTERISTICS**(Note 4)|||||||| |Turn−On Delay Time|td(ON)|VGS= 11.5 V, VDS= 15 V,
ID= 15 A, RG= 3.0�|||12.5||ns| |Rise Time|tr||||27.1||| |Turn−Off Delay Time|td(OFF)||||37.7||| |Fall Time|tf||||9.7||| |**DRAIN−SOURCE DIODE CHARACTERISTICS**|||||||| |Forward Diode Voltage|VSD|VGS= 0 V,
IS= 30 A|TJ= 25°C||0.8|1.0|V| ||||TJ= 125°C||0.7||| |Reverse Recovery Time|tRR|VGS= 0 V, dIS/dt = 100 A/�s,
IS= 30 A|||20.8||ns| |Charge Time|ta||||12.6||| |Discharge Time|tb||||8.2||| |Reverse Recovery Charge|QRR||||9.0||nC| |**PACKAGE PARASITIC VALUES**|||||||| |Source Inductance|LS|TA= 25°C|||0.65||nH| |Drain Inductance|LD||||0.005||| |Gate Inductance|LG||||1.84||| |Gate Resistance|RG||||1.3|2.5|�| 3. Pulse Test: pulse width � 300 � s, duty cycle � 2%. 4. Switching characteristics are independent of operating junction temperatures. ## **TYPICAL CHARACTERISTICS** **==> picture [487 x 174] intentionally omitted <==** **----- Start of picture text -----**
200 150
180 10 V VGS = 4.2 V TJ = 25 ° C 4.0 V 140
130 VDS ≥ 10 V
160 5.0 V 3.8 V 120
110
140 100
4.5 V 3.6 V
120 90
80
100 3.4 V
70
80 60
3.2 V 50
60 40 TJ = 125 ° C
3.0 V
40 2.8 V 3020 TJ = 25 ° C
20
0 2.6 V 100 T J = −55 ° C
0 1 2 3 4 5 6 1 2 3 4
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
, DRAIN CURRENT (A) , DRAIN CURRENT (A)
ID ID
**----- End of picture text -----**
**Figure 1. On−Region Characteristics** **==> picture [143 x 9] intentionally omitted <==** **----- Start of picture text -----**
Figure 2. Transfer Characteristics
**----- End of picture text -----**
**http://onsemi.com** **3** **NTMFS4845N** ## **TYPICAL CHARACTERISTICS** **==> picture [491 x 630] intentionally omitted <==** **----- Start of picture text -----**
0.016 0.006
0.014 ID = 30 ATJ = 25 ° C 0.005 TJ = 25 ° C
0.012
0.010 0.004 VGS = 4.5 V
0.008
0.006 0.003 V GS = 11.5 V
0.004
0.002
0.002
0 0.001
2 3 4 5 6 7 8 9 10 11 10 15 20 25 30 35 40 45 50 55 60
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and
Voltage Gate Voltage
1.7 10,000
1.6 ID = 30 A VGS = 0 V
1.5 VGS = 10 V
1.4 TJ = 150 ° C
1.3
1.2
1000
1.1
1.0
0.9
0.8 TJ = 125 ° C
0.7
0.6 100
−50 −25 0 25 50 75 100 125 150 2 4 6 8 10 12 14 16 18 20
TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current
Temperature vs. Voltage
4500 12 16
4000 Ciss TJ = 25 ° C QT 14
10
3500 VDS VGS 12
3000 8
10
2500
6 8
2000
1500 4 Qgs Qgd 6
Coss 4
1000
500 Crss 2 TIDJ = 30 A = 25 ° C 2
0 0 0
0 4 8 12 16 20 24 28 32 0 5 10 15 20 25 30 35 40 45 50 55 60 65
VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
) � ) �
, DRAIN−TO−SOURCE RESISTANCE ( , DRAIN−TO−SOURCE RESISTANCE (
DS(on) DS(on)
R R
, LEAKAGE (nA)
, DRAIN−TO−SOURCE
IDSS
DS(on)
R RESISTANCE (NORMALIZED)
V
DS
C, CAPACITANCE (pF)
, GATE−TO−SOURCE VOLTAGE (V)
GS
V , DRAIN−TO−SOURCE VOLTAGE (V)
**----- End of picture text -----**
**http://onsemi.com** **4** **NTMFS4845N** ## **TYPICAL CHARACTERISTICS** **==> picture [243 x 156] intentionally omitted <==** **----- Start of picture text -----**
1000
VDS = 15 V
ID = 15 A
VGS = 11.5 V tf
100
td(off)
tr td(on)
10
1
1 10 100
t, TIME (ns)
**----- End of picture text -----**
**==> picture [104 x 9] intentionally omitted <==** **----- Start of picture text -----**
RG, GATE RESISTANCE ( � )
**----- End of picture text -----**
**Figure 9. Resistive Switching Time Variation vs. Gate Resistance** **==> picture [239 x 173] intentionally omitted <==** **----- Start of picture text -----**
30
VGS = 0 V
25 TJ = 25 ° C
20
15
10
5
0
0.4 0.5 0.6 0.7 0.8 0.9
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
, SOURCE CURRENT (A)
IS
**----- End of picture text -----**
**Figure 10. Diode Forward Voltage vs. Current** **==> picture [491 x 384] intentionally omitted <==** **----- Start of picture text -----**
1000 240
220 ID = 39 A
200
10 � s
100 180
160
100 � s 140
10 1 ms 120
VGS = 20 V 100
10 ms
Single Pulse 80
1 TC = 25 ° C dc 60
RDS(on) Limit 40
Thermal Limit
20
Package Limit
0.1 0
0.1 1 10 100 25 50 75 100 125 150
VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE( ° C)
Figure 11. Maximum Rated Forward Biased Figure 12. Maximum Avalanche Energy vs.
Safe Operating Area Starting Junction Temperature
160 1000
140
120
100
100
80
60 125 ° C 100 ° C 25 ° C
10
40
20
VDS = 1.5 V
0 1
0 15 30 45 60 75 90 105 120 1 10 100 1000 10,000
DRAIN CURRENT (A) PULSE WIDTH ( � s)
, DRAIN CURRENT (A)
ID , SINGLE PULSE DRAIN−TO−
AS
E
SOURCE AVALANCHE ENERGY (mJ)
(S)
(A)
gFS Id
**----- End of picture text -----**
**Figure 13. gFS vs. Drain Current** **Figure 14. Id vs. Pulse Width** **http://onsemi.com** **5** **NTMFS4845N** ## **PACKAGE DIMENSIONS** **==> picture [475 x 582] intentionally omitted <==** **----- Start of picture text -----**
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE G
2 X NOTES:
1. DIMENSIONING AND TOLERANCING PER
0.20 C ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
a D A 3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
2 B 2 X BURRS.
D1 MILLIMETERS
0.20 C
4 DIM MIN NOM MAX
A 0.90 1.00 1.10
A1 0.00 −−− 0.05
E1 4 X b 0.33 0.41 0.51
c 0.23 0.28 0.33
E D 5.15 BSC
2 D1 4.50 4.90 5.10
c D2 3.50 −−− 4.22
a A1 E 6.15 BSC
HH f ec t —= E1 5.50 5.80 6.10
P 1 2 3 T 4 ify EEE E2 3.45 −−− 4.30
e 1.27 BSC
TOP VIEW G 0.51 0.61 0.71
3 X C K 1.20 1.35 1.50
0.10 C S e h SEATINGPLANE = L1L 0.510.05 0.610.17 0.710.20
M 3.00 3.40 3.80
A DETAIL A 0 −−− 12
a ae
0.10 C STYLE 1:
PIN 1. SOURCE
SF SIDE VIEW DETAIL A SOLDERING FOOTPRINT* 2. 3. SOURCESOURCE
4. GATE
3X 4X 5. DRAIN
8X b 1.270 0.750
4X
0.10 C A B 1.000
0.05 c L e/2
1 fe 4 0.965 b oo ts
K
1.330 2X
ft an a 0.905
E2 2X
PIN 5 M 0.495 4.530
(EXPOSED PAD) L1
3.200
0.475
G ac D2 and
2X
BOTTOM VIEW 1.530
rah Lo 4.560 eS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
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**----- End of picture text -----**
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