# Power MOSFET, N Channel, 30 V, 104 A, 0.0025 ohm, SOIC, Surface Mount ![Product image](https://novapart.co/image/farnell:2845381/) **URL**: https://novapart.co/products/NTMFS4835NT1G./power-mosfet-n-channel-30-v-104-a-00025-ohm-soic **SKU**: NTMFS4835NT1G. **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €1.2200 **Stock**: 10+ ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 8Pins | | Channel Type | N Channel | | Power Dissipation | 62.5W | | Transistor Mounting | Surface Mount | | Transistor Polarity | N Channel | | Power Dissipation Pd | 62.5W | | Rds(On) Test Voltage | 11.5V | | On Resistance Rds(On) | 0.0025ohm | | Transistor Case Style | SOIC | | Drain Source Voltage Vds | 30V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 104A | | Drain Source On State Resistance | 0.0025ohm | | Gate Source Threshold Voltage Max | 2.5V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2845381/) ## NTMFS4835N ## Power MOSFET **30 V, 104 A, Single N−Channel, SO−8FL** ## **Features** - Low R to Minimize Conduction Losses DS(on) - Low Capacitance to Minimize Driver Losses - Optimized Gate Charge to Minimize Switching Losses ## **www.onsemi.com** - These are Pb−Free Devices **==> picture [492 x 435] intentionally omitted <==** **----- Start of picture text -----**
|||||||||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |Applications|ee|V(BR)DSS|RDS(ON)|ee|MAX|ID MAX|ee| |•|Refer to Application Note AND8195/D|3.5 m|@ 10 V| |30 V|104 A| |•|CPU Power Delivery|5.0 m|@ 4.5 V| |•|DC−DC Converters| |•|Low Side Switching|D (5,6)| |MAXIMUM RATINGS|(TJ = 25|°|C unless otherwise stated)| |Parameter|Symbol|Value|Unit|G (4)| |Drain−to−Source Voltage|VDSS|30|V| |a|Gate−to−Source Voltage|VGS|ee|±|20|V|re|S (1,2,3)| |Continuous Drain|TA = 25|°|C|ID|20|A|N−CHANNEL MOSFET| |.|Current R(Note 1)|JA|TA = 85|Se|°|C|14| |Power Dissipation|TA = 25|°|C|PD|2.27|W|MARKING| |R|JA (Note 1)|DIAGRAM| |a|Continuous Drain|ee|TA = 25|ee|°|C|ee|ID|12|ee|A|D| |Current R(Note 2)|JA|Steady|TA = 85|°|C|9.0|S|4835N|D| |aS|Power Dissipation|State|TA = 25|°|C|PD|ae]|0.89|W|ee|1|SS|-&|AYWZZ| |ee|RContinuous DrainJA (Note 2)|ee|T|ee|C = 25|°|C|ee|ID|eee|104|A|SO−8 FLAT LEADCASE 488AA|G|D|D| |Se|Current R(Note 1)|JC|TC = 85|°|C|75|STYLE 1|A|= Assembly Location| |Power Dissipation|TC = 25|°|C|PD|62.5|W|Y|= Year| |R|JC (Note 1)|W|= Work Week| |a|Pulsed Drain|ee|TA = 25|°|C,|ee|I|ee|DM|ee|208|ee|A|ZZ|= Lot Traceability| |e|CurrentOperating Junction and Storage|e|tp = 10 s|e|ee|TJ,|−55 to|ee|°|C| |Temperature|TSTG|+150| |pt|Source Current (Body Diode)|IS|52|A|ORDERING INFORMATION| |Drain to Source DV/DT|dV/dt|6|V/ns|Device|Package|Shipping|[[†]]| |Single Pulse Drain−to−Source AvalancheEnergy TIL = 28 ApkJ = 25, L = 1.0 mH, R|°|C, VDD = 50 V, VG = 25 GS = 10 V,|EAS|392|mJ|NTMFS4835NT1G|(Pb−Free)SO−8FLSO−8FL|Tape & Reel1500 / 1500 /| |Lead Temperature for Soldering Purposes|TL|260|°|C|NTMFS4835NT3G|SO−8FL|5000 /| |e|(1/8|″|from case for 10 s)|seeeeee|ee|Tt|(Pb−Free)|Tape & Reel| **----- End of picture text -----**
## **Applications** - Refer to Application Note AND8195/D - CPU Power Delivery • DC−DC Converters - Low Side Switching **Device Package Shipping**[[†]] NTMFS4835NT1G (Pb−Free)SO−8FLSO−8FL Tape & Reel1500 / 1500 / NTMFS4835NT3G SO−8FL 5000 / (Pb−Free) Tape & Reel ~~Tt~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. Publication Order Number: **NTMFS4835N/D** **1** © Semiconductor Components Industries, LLC, 2012 **January, 2018 − Rev. 9** **NTMFS4835N** ## **THERMAL RESISTANCE MAXIMUM RATINGS** |**THERMAL RESISTANCE MAXIMUM RATINGS**|||| |---|---|---|---| |**Parameter**|**Symbol**|**Value**|**Unit**| |Junction−to−Case (Drain)|R�JC|2.0|°C/W| |Junction−to−Ambient – Steady State (Note 3)|R�JA|55.1|| |Junction−to−Ambient – Steady State (Note )|R�JA|140.1|| 3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 4. Surface−mounted on FR4 board using the minimum recommended pad size. **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) |**ELECTRICAL CHARACTERISTICS**(TJ=|25°C unless|otherwise specified)|otherwise specified)||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||||| |Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID=|250�A|30|||V| |Drain−to−Source Breakdown Voltage
Temperature Coefficient|V(BR)DSS/
TJ||||22.4||mV/°C| |Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,
VDS= 24 V|TJ= 25°C|||1.0|�A| ||||TJ= 125°C|||10|| |Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS|=±20 V|||±100|nA| |**ON CHARACTERISTICS**(Note 5)|||||||| |Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID=|250�A|1.5|1.9|2.5|V| |Negative Threshold Temperature Coefficient|VGS(TH)/TJ||||5.3||mV/°C| |Drain−to−Source On Resistance|RDS(on)|VGS= 10 V to
11.5 V|ID= 30 A||2.9|3.5|m�| ||||ID= 15 A||2.5||| |||VGS= 4.5 V|ID= 30 A||4.3|5.0|| ||||ID= 15 A||3.9||| |Forward Transconductance|gFS|VDS= 15 V, ID= 15 A|||21||S| |**CHARGES, CAPACITANCES & GATE RESISTANCE**|||||||| |Input Capacitance|CISS|VGS= 0 V, f = 1 MHz, VDS= 12 V||1860|3100|4340|pF| |Output Capacitance|COSS|||402|670|938|| |Reverse Transfer Capacitance|CRSS|||216|360|504|| |Total Gate Charge|QG(TOT)|VGS= 4.5 V, VDS= 15 V; ID= 30 A|||22|39|nC| |Threshold Gate Charge|QG(TH)||||4.7||| |Gate−to−Source Charge|QGS||||8.3||| |Gate−to−Drain Charge|QGD||||8.8||| |Total Gate Charge|QG(TOT)|VGS= 11.5 V, VDS= 15 V;
ID= 30 A|||52||nC| |**SWITCHING CHARACTERISTICS**(Note 6)|||||||| |Turn−On Delay Time|td(ON)|VGS= 4.5 V, VDS= 15 V, ID= 15 A,
RG= 3.0�|||16||ns| |Rise Time|tr||||31||| |Turn−Off Delay Time|td(OFF)||||22||| |Fall Time|tf||||13||| |Turn−On Delay Time|td(ON)|VGS= 11.5 V, VDS= 15 V,
ID= 15 A, RG= 3.0�|||10||ns| |Rise Time|tr||||23||| |Turn−Off Delay Time|td(OFF)||||30||| |Fall Time|tf||||10||| 5. Pulse Test: pulse width � 300 � s, duty cycle � 2%. 6. Switching characteristics are independent of operating junction temperatures. **www.onsemi.com** **2** ## **NTMFS4835N** ## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) |**ELECTRICAL CHARACTERISTICS**(TJ=|25°C unless|otherwise specified)|otherwise specified)||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**| |**DRAIN−SOURCE DIODE CHARACTERISTICS**|||||||| |Forward Diode Voltage|VSD|VGS= 0 V,
IS= 30 A|TJ= 25°C||0.77|1.0|V| ||||TJ= 125°C||0.70||| |Reverse Recovery Time|tRR|VGS= 0 V, dIS/dt = 100 A/�s,
IS= 30 A|||27|50|ns| |Charge Time|ta||||15||| |Discharge Time|tb||||12||| |Reverse Recovery Charge|QRR||||18||nC| |**PACKAGE PARASITIC VALUES**|||||||| |Source Inductance|LS|TA= 25°C|||0.65||nH| |Drain Inductance|LD||||0.005||nH| |Gate Inductance|LG||||1.84||nH| |Gate Resistance|RG||||1.3|5.0|�| 5. Pulse Test: pulse width � 300 � s, duty cycle � 2%. 6. Switching characteristics are independent of operating junction temperatures. **www.onsemi.com** **3** **NTMFS4835N** ## **TYPICAL PERFORMANCE CURVES** **==> picture [491 x 606] intentionally omitted <==** **----- Start of picture text -----**
170 170
150 VGS = 5.0 to 10 V 4.0 V 150 VDS ≥ 10 V
130 130
TJ = 25 ° C 3.5 V
110 110
90 90
3.2 V
70 70
50 3.0 V 50 TJ = 25 ° C
30 2.8 V 30
10 2.6 V 10 TJ = 125 ° C TJ = −55 ° C
0 0
0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
0.030 0.008
0.025 TIDJ = 30 A = 25 ° C 0.007 TJ = 25 ° C
0.006
0.020
0.005 VGS = 4.5 V
0.015 0.004
0.003
0.010 VGS = 11.5 V
0.002
0.005
0.001
0 0
2 4 6 8 10 12 10 15 20 25 30 35 40 45 50 55 60
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and
Voltage Gate Voltage
2.0 100,000
ID = 30 A VGS = 0 V
VGS = 10 V
1.5 10,000 TJ = 150 ° C
1.0 1,000
TJ = 125 ° C
0.5 100
0 10
−50 −25 0 25 50 75 100 125 150 4 8 12 16 20 24 28 30
TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, DRAIN CURRENT (AMPS) , DRAIN CURRENT (AMPS)
ID ID
) � ) �
, DRAIN−TO−SOURCE RESISTANCE ( , DRAIN−TO−SOURCE RESISTANCE (
DS(on) DS(on)
R R
, LEAKAGE (nA)
(NORMALIZED) IDSS
, DRAIN−TO−SOURCE RESISTANCE
DS(on)
R
**----- End of picture text -----**
**Figure 5. On−Resistance Variation with Temperature** **Figure 6. Drain−to−Source Leakage Current vs. Voltage** **www.onsemi.com** **4** **NTMFS4835N** ## **TYPICAL PERFORMANCE CURVES** **==> picture [490 x 605] intentionally omitted <==** **----- Start of picture text -----**
5000 12 20
4500 Ciss T J = 25 ° C Q T 18
4000 10 VGS 16
3500 VDS 14
Ciss 8
3000 12
2500 6 10
2000 C rss 4 Q gs Q gd 8
1500 6
1000 4
Coss 2 ID = 30 A
500 TJ = 25 ° C 2
0 0 0
15 10 5 0 5 10 15 20 25 30 0 5 10 15 20 25 30 35 40 45 50 55
VGS VDS QG, TOTAL GATE CHARGE (nC)
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 8. Gate−To−Source and Drain−To−Source
Figure 7. Capacitance Variation Voltage vs. Total Charge
1000 30
VDS = 15 V VGS = 0 V
ID = 15 A
25
VGS = 11.5 V
td(off) TJ = 25 ° C
100 tf 20
tr
15
td(on)
10 10
5
1 0
1 10 100 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
RG, GATE RESISTANCE ( � ) VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Figure 10. Diode Forward Voltage vs. Current
Variation vs. Gate Resistance
1000 400
360 ID = 28 A
100 10 � s 320
280
100 � s 240
10 1 ms 200
VGS = 20 V 10 ms 160
SINGLE PULSE
TC = 25 ° C dc 120
1
RDS(on) LIMIT 80
THERMAL LIMIT
40
PACKAGE LIMIT
0.1 0
0.1 1 10 100 25 50 75 100 125 150
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE ( ° C)
V
DS
C, CAPACITANCE (pF)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
GS
V , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
t, TIME (ns)
IS, SOURCE CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
AVALANCHE ENERGY (mJ)
, SINGLE PULSE DRAIN−TO−SOURCE
AS
E
**----- End of picture text -----**
**Figure 11. Maximum Rated Forward Biased Safe Operating Area** **Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature** **www.onsemi.com** **5** **NTMFS4835N** ## **TYPICAL PERFORMANCE CURVES** **==> picture [493 x 585] intentionally omitted <==** **----- Start of picture text -----**
1000
100
25 ° C
10 100 ° C
125 ° C
1
1 10 100 1000 10000
PULSE WIDTH ( � s)
Figure 13. Avalanche Characteristics
100
Duty Cycle = 0.5
0.2
10
0.1
0.05
1 0.02
0.01
0.1
0.01 SINGLE PULSE
0.001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t, PULSE TIME (s)
Figure 14. FET Thermal Response
10
1
� JC
0.1
0.01
0.001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t, PULSE TIME (s)
ID, DRAIN CURRENT (AMPS)
C/W) EFFECTIVE TRANSIENT ° THERMAL RESISTANCE
(
J(t)
�
R
C/W)
°
(
J(t)
�
R
**----- End of picture text -----**
**Figure 15. FET Thermal Response from Junction to Case** **www.onsemi.com** **6** **NTMFS4835N** ## **PACKAGE DIMENSIONS** **==> picture [475 x 588] intentionally omitted <==** **----- Start of picture text -----**
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE M
2 X NOTES:
1. DIMENSIONING AND TOLERANCING PER
0.20 C ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
D = A 3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
2 B 2 X BURRS.
D1 MILLIMETERS
0.20 C
DIM MIN NOM MAX
fet —= A 0.90 1.00 1.10
A1 0.00 −−− 0.05
E1 4 X b 0.33 0.41 0.51
c 0.23 0.28 0.33
E D 5.00 5.15 5.30
2 D1 4.70 4.90 5.10
c D2 3.80 4.00 4.20
A1 E 6.00 6.15 6.30
E1 5.70 5.90 6.10
1 2 3 4 E2 3.45 3.65 3.85
e 1.27 BSC
TOP VIEW G 0.51 0.575 0.71
C K 1.20 1.35 1.50
SEATING L 0.51 0.575 0.71
0.10 C DETAIL A PLANE L1 0.125 REF
M 3.00 3.40 3.80
~. | A —— 0 −−− 12
0.10 C STYLE 1:
RECOMMENDED PIN 1. SOURCE
SIDE VIEW SOLDERING FOOTPRINT* 2. SOURCE
DETAIL A 3. SOURCE
2X 4. GATE
0.495 4.560 5. DRAIN
8X b 2X
0.10 C A B 1.530
e/2
0.05 c
L e
1 4
3.200
K 4.530
_ fe
PIN 5 E2 M 2X 1.330
(EXPOSED PAD) L1 0.905
f oto 4 1
0.965
G rot D2 7 4X 9 ol
1.000 1.270
BOTTOM VIEW
4X 0.750 one PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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**----- End of picture text -----**
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