# Power MOSFET, N Channel, 30 V, 191 A, 2000 µohm, DFN, Surface Mount ![Product image](https://novapart.co/image/farnell:3616390/) **URL**: https://novapart.co/products/NTMFS4833NT3G/power-mosfet-n-channel-30-v-191-a-2000-ohm-dfn **SKU**: NTMFS4833NT3G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.6440 **Stock**: 10+ ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (15-Jan-2018) | | No. Of Pins | 5Pins | | Channel Type | N Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 125W | | Transistor Mounting | Surface Mount | | Rds(On) Test Voltage | 10V | | Transistor Case Style | DFN | | Drain Source Voltage Vds | 30V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 191A | | Drain Source On State Resistance | 2000µohm | | Gate Source Threshold Voltage Max | 1.5V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3616390/) ## NTMFS4833N ## Power MOSFET ## **30 V, 191 A, Single N−Channel, SO−8FL** ## **Features** - Low R to Minimize Conduction Losses DS(on) - Low Capacitance to Minimize Driver Losses - Optimized Gate Charge to Minimize Switching Losses ## **http://onsemi.com** - These are Pb−Free Devices **==> picture [190 x 328] intentionally omitted <==** **----- Start of picture text -----**
a V(BR)DSS RDS(ON) MAX ID MAX
2.0 m @ 10 V
30 V 191 A
3.0 m @ 4.5 V
D (5)
G (4)
Ghh S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAM
D
1 S D
S 4833N
SO−8 FLAT LEAD
S AYWZZ
CASE 488AA
G D
STYLE 1
D
:
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
**----- End of picture text -----**
## **Applications** - Refer to Application Note AND8195/D - CPU Power Delivery - DC−DC Converters • Low Side Switching D (5) **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise stated) ~~es~~ **Parameter Symbol Value Unit** Drain−to−Source Voltage VDSS 30 V G (4) Gate−to−Source Voltage VGS ± 20 V ~~—~~ Continuous Drain TA = 25 ° C ID 28 A ~~Ghh~~ S (1,2,3) Current R(Note 1) JA TA = 85 ° C 20.5 **N−CHANNEL MOSFET** ~~Tes~~ Power Dissipation TA = 25 ° C PD 2.7 W R JA (Note 1) **MARKING** ~~a~~ Continuous Drain e ~~ee~~ TA = 25 ° C ID ~~Le~~ 16 A **DIAGRAM** ~~|~~ Current R(Note 2) JA Steady ~~EE~~ TA = 85 ° C 12 1 S D D State Power Dissipation TA = 25 ° C PD 1.1 W **SO−8 FLAT LEAD** S 4833N R JA (Note 2) S AYWZZ ~~Eo OS Wi~~ **CASE 488AA** Continuous Drain TC = 25 ° C ID 191 A **STYLE 1** G D Current R(Note 1) JC TC = 85 ° C 138 D ~~NESE~~ : Power Dissipation TC = 25 ° C PD 113.6 W A = Assembly Location R JC (Note 1) Y = Year ~~a~~ W = Work Week Pulsed Drain ~~de~~ TA = 25 ~~[cot~~ ° C, IDM ~~|~~ 288 A ZZ = Lot Traceability Current tp = 10 s ~~ae~~ Operating Junction and Storage ~~ee~~ TJ, TSTG ~~ee~~ −55 to ° C Temperature +150 **ORDERING INFORMATION** ~~ee eee~~ Source Current (Body Diode) IS 104 A **Device Package Shipping**[†] Drain to Source dV/dt dV/dt 6 V/ns ~~——~~ Single Pulse Drain−to−Source Avalanche EAS 612.5 mJ NTMFS4833NT1G SO−8FL 1500/Tape & Reel Energy (TJ = 25 ° C, VDD = 30 V, VGS = 10 V, (Pb−Free) IL = 35 Apk, L = 1.0 mH, RG = 25 NTMFS4833NT3G SO−8FL 5000/Tape & Reel Lead Temperature for Soldering Purposes TL 260 ° C (Pb−Free) ~~FA~~ ″ ~~Fe~~ (1/8 from case for 10 s) ~~ee~~ †For information on tape and reel specifications, ~~ee ee~~ Stresses exceeding those listed in the Maximum Ratings table may damage the including part orientation and tape sizes, please device. If any of these limits are exceeded, device functionality should not be refer to our Tape and Reel Packaging Specification assumed, damage may occur and reliability may be affected. Brochure, BRD8011/D. 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. (Cu area = 50 mm[2] [1 oz]) Publication Order Number: **NTMFS4833N/D** **1** © Semiconductor Components Industries, LLC, 2014 **June, 2024 − Rev. 11** **NTMFS4833N** ## **THERMAL RESISTANCE MAXIMUM RATINGS** |**THERMAL RESISTANCE MAXIMUM RATINGS**|||| |---|---|---|---| |**Parameter**|**Symbol**|**Value**|**Unit**| |Junction−to−Case (Drain)|R�JC|1.1|°C/W| |Junction−to−Ambient – Steady State (Note 3)|R�JA|45.6|| |Junction−to−Ambient – t < 10s (Note 3)|R�JA|17.1|| |Junction−to−Ambient – Steady State (Note 4)|R�JA|117.4|| 3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 4. Surface−mounted on FR4 board using the minimum recommended pad size. (Cu area = 50 mm[2] [1 oz]) **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) |**ELECTRICAL CHARACTERISTICS**(TJ=|25°C unless|otherwise specified)|otherwise specified)||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||||| |Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID=|250�A|30|||V| |Drain−to−Source Breakdown Voltage
Temperature Coefficient|V(BR)DSS/
TJ||||17||mV/°C| |Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,
VDS= 24 V|TJ= 25°C|||1|�A| ||||TJ= 125°C|||10|| |Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS|=±20 V|||±100|nA| |**ON CHARACTERISTICS**(Note 5)|||||||| |Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID=|250�A|1.5||2.5|V| |Negative Threshold Temperature Coefficient|VGS(TH)/TJ||||7.12||mV/°C| |Drain−to−Source On Resistance|RDS(on)|VGS= 10 V to
11.5 V|ID= 30 A||1.3|2.0|m�| ||||ID= 15 A||1.3||| |||VGS= 4.5 V|ID= 30 A||2.3|3.0|| ||||ID= 15 A||2.3||| |Forward Transconductance|gFS|VDS= 15 V, ID= 15 A|||30||S| |**CHARGES, CAPACITANCES & GATE RESISTANCE**|||||||| |Input Capacitance|CISS|VGS= 0 V, f = 1 MHz, VDS= 12 V|||5600||pF| |Output Capacitance|COSS||||1200||| |Reverse Transfer Capacitance|CRSS||||650||| |Total Gate Charge|QG(TOT)|VGS= 4.5 V, VDS= 15 V; ID= 30 A|||39|58|nC| |Threshold Gate Charge|QG(TH)||||6.0||| |Gate−to−Source Charge|QGS||||16||| |Gate−to−Drain Charge|QGD||||17||| |Total Gate Charge|QG(TOT)|VGS= 11.5 V, VDS= 15 V; ID= 30 A|||88||nC| |**SWITCHING CHARACTERISTICS**(Note 6)|||||||| |Turn−On Delay Time|td(ON)|VGS= 4.5 V, VDS= 15 V, ID= 15 A,
RG= 3.0�|||25||ns| |Rise Time|tr||||34||| |Turn−Off Delay Time|td(OFF)||||35||| |Fall Time|tf||||17||| |Turn−On Delay Time|td(ON)|VGS= 11.5 V, VDS= 15 V,
ID= 15 A, RG= 3.0�|||14||ns| |Rise Time|tr||||19||| |Turn−Off Delay Time|td(OFF)||||50||| |Fall Time|tf||||10||| 5. Pulse Test: pulse width � 300 � s, duty cycle � 2%. 6. Switching characteristics are independent of operating junction temperatures. **http://onsemi.com** **2** ## **NTMFS4833N** ## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) |**ELECTRICAL CHARACTERISTICS**(TJ|= 25°C unless|otherwise specified)|otherwise specified)||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**| |**DRAIN−SOURCE DIODE CHARACTERISTICS**|||||||| |Forward Diode Voltage|VSD|VGS= 0 V,
IS= 30 A|TJ= 25°C|−|0.8|1.0|V| ||||TJ= 125°C|−|0.68|−|| |Reverse Recovery Time|tRR|VGS= 0 V, dIS/dt = 100 A/�s,
IS= 30 A||−|38|−|ns| |Charge Time|ta|||−|19|−|| |Discharge Time|tb|||−|19|−|| |Reverse Recovery Charge|QRR|||−|36|−|nC| |**PACKAGE PARASITIC VALUES**|||||||| |Source Inductance|LS|TA= 25°C||−|0.50|−|nH| |Drain Inductance|LD|||−|0.005|−|nH| |Gate Inductance|LG|||−|1.84|−|nH| |Gate Resistance|RG|||−|1.0|−|�| |5. Pulse Test: pulse width�300�s, duty cycle�2%.
6. Switching characteristics are independent of operating junction temperatures.|||||||| **==> picture [42 x 70] intentionally omitted <==** **==> picture [133 x 160] intentionally omitted <==** **==> picture [127 x 113] intentionally omitted <==** **http://onsemi.com** **3** **NTMFS4833N** ## **TYPICAL PERFORMANCE CURVES** **==> picture [491 x 632] intentionally omitted <==** **----- Start of picture text -----**
200 200
4.2 V thru 10 V
175 VGS = 4.0 V 175 VDS ≥ 10 V
TJ = 25 ° C 3.8 V
150 150
125 3.6 V 125
100 100
3.4 V TJ = 125 ° C
75 75
50 3.2 V 50
TJ = 25 ° C
25 3.0 V 25
2.8 V TJ = −55 ° C
0 0
0 1 2 3 4 5 0 1 2 3 4 5
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
0.010 0.004
TJ = 25 ° C
I D = 30 A
0.008 TJ = 25 ° C
0.003
VGS = 4.5 V
0.006
0.002
0.004
VGS = 11.5 V
0.001
0.002
0 0
2 4 6 8 10 12 25 50 75 100 125 150 175 200
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and
Voltage Gate Voltage
1.75 100,000
ID = 30 A VGS = 0 V
1.5 VGS = 10 V
TJ = 150 ° C
1.25
10,000
1.0 TJ = 125 ° C
0.75
1,000
0.5
0.25
0 100
−50 −25 0 25 50 75 100 125 150 0 5 10 15 20 25 30
TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current
Temperature vs. Voltage
, DRAIN CURRENT (AMPS) , DRAIN CURRENT (AMPS)
ID ID
) � ) �
, DRAIN−TO−SOURCE RESISTANCE ( , DRAIN−TO−SOURCE RESISTANCE (
DS(on) DS(on)
R R
, LEAKAGE (nA)
IDSS
, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
DS(on)
R
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**http://onsemi.com** **4** **NTMFS4833N** ## **TYPICAL PERFORMANCE CURVES** **==> picture [244 x 604] intentionally omitted <==** **----- Start of picture text -----**
8000
7000 C iss T J = 25 ° C
6000
C iss
5000
4000
Crss
3000
2000
C oss
1000
0 V DS = 0 V V GS = 0 V
10 5 0 5 10 15 20 25
VGS VDS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
1000
VDD = 15 V
ID = 15 A td(off)
VGS = 11.5 V
tf
100
tr
td(on)
10
1 10 100
RG, GATE RESISTANCE ( � )
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
1000
10 � s
100
100 � s
10 1 ms
10 ms
1 VGS = 20 V 100 m s
SINGLE PULSE
TC = 25 ° C
0.1 RDS(on) LIMIT dc
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.01 0.1 1 10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
t, TIME (ns)
ID, DRAIN CURRENT (AMPS)
**----- End of picture text -----**
**==> picture [245 x 604] intentionally omitted <==** **----- Start of picture text -----**
12
Q T
10 VGS
8
6
Q1 Q2
4
2 ID = 30 A
TJ = 25 ° C
0
0 10 20 30 40 50 60 70 80 90
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate−To−Source and Drain−To−Source
Voltage vs. Total Charge
30
VGS = 0 V
25
TJ = 25 ° C
20
15
10
5
0
0 0.2 0.4 0.6 0.8 1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage vs. Current
650
600 ID = 35 A
550
500
450
400
350
300
250
200
150
100
50
0
25 50 75 100 125 150
TJ, STARTING JUNCTION TEMPERATURE ( ° C)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
GS
V
IS, SOURCE CURRENT (AMPS)
AVALANCHE ENERGY (mJ)
, SINGLE PULSE DRAIN−TO−SOURCE
AS
E
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GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) **Figure 11. Maximum Rated Forward Biased Safe Operating Area** **Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature** **http://onsemi.com** **5** **NTMFS4833N** ## **TYPICAL PERFORMANCE CURVES** **==> picture [276 x 200] intentionally omitted <==** **----- Start of picture text -----**
1000
100
25 ° C
100 ° C
10
125 ° C
1
1 10 100 1,000 10,000
PULSE WIDTH ( � s)
Figure 13. Avalanche Characteristics
ID, DRAIN CURRENT (AMPS)
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**==> picture [493 x 210] intentionally omitted <==** **----- Start of picture text -----**
100
Duty Cycle = 0.5
10 0.2
0.1
0.05
1 0.02
0.01
0.1
Single Pulse
0.01
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t, time (s)
Figure 14. FET Thermal Response
C/W)
°
R(t) (
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**http://onsemi.com** **6** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [493 x 621] intentionally omitted <==** **----- Start of picture text -----**
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
1 ISSUE N
SCALE 2:1 DATE 25 JUN 2018
2 X NOTES:
1. DIMENSIONING AND TOLERANCING PER
0.20 C ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
D A 3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
2 B 2 X BURRS.
D1 MILLIMETERS
0.20 C
DIM MIN NOM MAX
A 0.90 1.00 1.10
A1 0.00 −−− 0.05
E1 4 X b 0.33 0.41 0.51
� c 0.23 0.28 0.33
E D 5.00 5.15 5.30
2 D1 4.70 4.90 5.10
c D2 3.80 4.00 4.20
A1 E 6.00 6.15 6.30
E1 5.70 5.90 6.10
1 2 3 4 E2 3.45 3.65 3.85
e 1.27 BSC
TOP VIEW G 0.51 0.575 0.71
C K 1.20 1.35 1.50
SEATING L 0.51 0.575 0.71
0.10 C DETAIL A PLANE L1 0.125 REF
M 3.00 3.40 3.80
A � 0 � −−− 12 �
0.10 C GENERIC
SIDE VIEW MARKING DIAGRAM*
DETAIL A
1
8X b XXXXXX
0.10 C A B e/2 AYWZZ
0.05 c
L e
1 4 XXXXXX = Specific Device Code
K A = Assembly Location
Y = Year
RECOMMENDED W = Work Week
E2 SOLDERING FOOTPRINT* ZZ = Lot Traceability
(EXPOSED PAD)PIN 5 L1 M 0.4952X 4.560 *This information is generic. Please refer to
2X device data sheet for actual part marking.
1.530 Pb−Free indicator, “G” or microdot “ � ”,
may or may not be present. Some products
G D2 2X may not follow the Generic Marking.
BOTTOM VIEW 0.475
3.200
4.530
STYLE 1: STYLE 2: 2X 1.330
PIN 1. 2. SOURCESOURCE PIN 1. 2. ANODEANODE 0.905
3. SOURCE 3. ANODE 1
4. GATE 4. NO CONNECT
5. DRAIN 5. CATHODE 0.965
4X
1.000 1.270
4X 0.750 PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the onsemi Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98AON14036D Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DESCRIPTION: DFN5 5x6, 1.27P (SO−8FL) PAGE 1 OF 1
**----- End of picture text -----**
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