# Power MOSFET, N Channel, 30 V, 26 A, 0.0013 ohm, DFN, Surface Mount ![Product image](https://novapart.co/image/farnell:2101432/) **URL**: https://novapart.co/products/NTMFS4833NT1G/power-mosfet-n-channel-30-v-26-a-00013-ohm-dfn **SKU**: NTMFS4833NT1G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.8430 **Stock**: 10+ ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 5Pins | | Channel Type | N Channel | | Power Dissipation | 125W | | Transistor Mounting | Surface Mount | | Transistor Polarity | N Channel | | Power Dissipation Pd | 125W | | Rds(On) Test Voltage | 10V | | On Resistance Rds(On) | 0.0013ohm | | Transistor Case Style | DFN | | Drain Source Voltage Vds | 30V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 26A | | Drain Source On State Resistance | 0.0013ohm | | Gate Source Threshold Voltage Max | 1.5V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2101432/) ## NTMFS4833N ## Power MOSFET ## **30 V, 191 A, Single N−Channel, SO−8FL** ## **Features** - Low R to Minimize Conduction Losses DS(on) - Low Capacitance to Minimize Driver Losses - Optimized Gate Charge to Minimize Switching Losses ## **http://onsemi.com** - These are Pb−Free Devices > **Applications** ~~a~~ **V(BR)DSS RDS(ON)** ~~ee~~ **MAX** ~~eee~~ **ID MAX** • Refer to Application Note AND8195/D 2.0 m @ 10 V • CPU Power Delivery 30 V 191 A 3.0 m @ 4.5 V • DC−DC Converters • Low Side Switching D (5) **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise stated) ~~ee~~ **Parameter Symbol** ~~ee~~ **Value** ~~ee~~ **Unit** Drain−to−Source Voltage VDSS 30 V G (4) Gate−to−Source Voltage VGS ± 20 V ~~———~~ Continuous Drain TA = 25 ° C ID 26 A ~~re~~ S (1,2,3) Current R(Note 1) JA TA = 85 ° C 19 **N−CHANNEL MOSFET** ~~Ce~~ Power Dissipation TA = 25 ° C PD 2.35 W R JA (Note 1) **MARKING** ~~a ee~~ Continuous Drain TA = 25 ° C ID 16 A **DIAGRAM** ~~ee~~ Current R(Note 2) JA Steady TA = 85 ° C ~~ee~~ 12 y~ 1 S D D State Power DissipationR JA (Note 2) TA = 25 ° C PD 0.91 W **SO−8 FLAT LEAD** SS AYWW4833N ~~ee~~ **CASE 488AA** Continuous Drain TC = 25 ° C ID 191 A **STYLE 1** G D Current R(Note 1) JC TC = 85 ° C 138 D ~~J Cer~~ Power Dissipation TC = 25 ° C PD 125 W A = Assembly Location R JC (Note 1) Y = Year WW = Work Week ~~a~~ Pulsed Drain ~~ee~~ TA = 25 ° ~~ee~~ C, ~~ee~~ IDM 288 A = Pb−Free Package ~~ee~~ CurrentOperating Junction and Storage ~~ee~~ tp = 10 s TJ ~~ee~~ , TSTG −55 to ~~ee~~ ° C (Note: Microdot may be in either location) Temperature +150 ~~eeee ee~~ Source Current (Body Diode) IS 104 A **ORDERING INFORMATION** Drain to Source dV/dt dV/dt 6 V/ns ~~————~~ Single Pulse Drain−to−Source Avalanche EAS 612.5 mJ **Device Package Shipping**[†] Energy (TJ = 25 ° C, VDD = 30 V, VGS = 10 V, ~~pr~~ IL = 35 Apk, L = 1.0 mH, RG = 25 NTMFS4833NT1G SO−8FL 1500/Tape & Reel (Pb−Free) Lead Temperature for Soldering Purposes TL 260 ° C ~~ee~~ (1/8 ″ from case for 10 s) ~~ee ee~~ NTMFS4833NT3G (Pb−Free)SO−8FL 5000/Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended †For information on tape and reel specifications, Operating Conditions is not implied. Extended exposure to stresses above the including part orientation and tape sizes, please Recommended Operating Conditions may affect device reliability. - †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. Publication Order Number: **NTMFS4833N/D** **1** © Semiconductor Components Industries, LLC, 2010 **May, 2010 − Rev. 7** **NTMFS4833N** ## **THERMAL RESISTANCE MAXIMUM RATINGS** |**THERMAL RESISTANCE MAXIMUM RATINGS**|||| |---|---|---|---| |**Parameter**|**Symbol**|**Value**|**Unit**| |Junction−to−Case (Drain)|R�JC|1.0|°C/W| |Junction−to−Ambient – Steady State (Note 3)|R�JA|53.2|| |Junction−to−Ambient – t < 10s (Note 3)|R�JA|20.3|| |Junction−to−Ambient – Steady State (Note 4)|R�JA|137.8|| 3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 4. Surface−mounted on FR4 board using the minimum recommended pad size. **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) |**ELECTRICAL CHARACTERISTICS**(TJ=|25°C unless|otherwise specified)|otherwise specified)||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||||| |Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID=|250�A|30|||V| |Drain−to−Source Breakdown Voltage
Temperature Coefficient|V(BR)DSS/
TJ||||17||mV/°C| |Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,
VDS= 24 V|TJ= 25°C|||1|�A| ||||TJ= 125°C|||10|| |Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS|=±20 V|||±100|nA| |**ON CHARACTERISTICS**(Note 5)|||||||| |Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID=|250�A|1.5||2.5|V| |Negative Threshold Temperature Coefficient|VGS(TH)/TJ||||7.12||mV/°C| |Drain−to−Source On Resistance|RDS(on)|VGS= 10 V to
11.5 V|ID= 30 A||1.3|2.0|m�| ||||ID= 15 A||1.3||| |||VGS= 4.5 V|ID= 30 A||2.3|3.0|| ||||ID= 15 A||2.3||| |Forward Transconductance|gFS|VDS= 15 V, ID= 15 A|||30||S| |**CHARGES, CAPACITANCES & GATE RESISTANCE**|||||||| |Input Capacitance|CISS|VGS= 0 V, f = 1 MHz, VDS= 12 V|||5600||pF| |Output Capacitance|COSS||||1200||| |Reverse Transfer Capacitance|CRSS||||650||| |Total Gate Charge|QG(TOT)|VGS= 4.5 V, VDS= 15 V; ID= 30 A|||39|58|nC| |Threshold Gate Charge|QG(TH)||||6.0||| |Gate−to−Source Charge|QGS||||16||| |Gate−to−Drain Charge|QGD||||17||| |Total Gate Charge|QG(TOT)|VGS= 11.5 V, VDS= 15 V; ID= 30 A|||88||nC| |**SWITCHING CHARACTERISTICS**(Note 6)|||||||| |Turn−On Delay Time|td(ON)|VGS= 4.5 V, VDS= 15 V, ID= 15 A,
RG= 3.0�|||25||ns| |Rise Time|tr||||34||| |Turn−Off Delay Time|td(OFF)||||35||| |Fall Time|tf||||17||| |Turn−On Delay Time|td(ON)|VGS= 11.5 V, VDS= 15 V,
ID= 15 A, RG= 3.0�|||14||ns| |Rise Time|tr||||19||| |Turn−Off Delay Time|td(OFF)||||50||| |Fall Time|tf||||10||| 5. Pulse Test: pulse width � 300 � s, duty cycle � 2%. 6. Switching characteristics are independent of operating junction temperatures. **http://onsemi.com** **2** ## **NTMFS4833N** **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) |**ELECTRICAL CHARACTERISTICS**(TJ=|25°C unless|otherwise specified)|otherwise specified)||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**| |**DRAIN−SOURCE DIODE CHARACTERISTICS**|||||||| |Forward Diode Voltage|VSD|VGS= 0 V,
IS= 30 A|TJ= 25°C|−|0.8|1.0|V| ||||TJ= 125°C|−|0.68|−|| |Reverse Recovery Time|tRR|VGS= 0 V, dIS/dt = 100 A/�s,
IS= 30 A||−|38|−|ns| |Charge Time|ta|||−|19|−|| |Discharge Time|tb|||−|19|−|| |Reverse Recovery Charge|QRR|||−|36|−|nC| |**PACKAGE PARASITIC VALUES**|||||||| |Source Inductance|LS|TA= 25°C||−|0.50|−|nH| |Drain Inductance|LD|||−|0.005|−|nH| |Gate Inductance|LG|||−|1.84|−|nH| |Gate Resistance|RG|||−|1.0|−|�| 5. Pulse Test: pulse width � 300 � s, duty cycle � 2%. 6. Switching characteristics are independent of operating junction temperatures. **http://onsemi.com** **3** **NTMFS4833N** ## **TYPICAL PERFORMANCE CURVES** **==> picture [234 x 174] intentionally omitted <==** **----- Start of picture text -----**
200
VDSDS ≥ 10 V
175
150
125
100
TJ = 125J = 125 = 125 ° C
75
50
TJ = 25J = 25 = 25 ° C
25
TJ = −55J = −55 = −55 ° C
0
0 1 2 3 4 5
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)GS, GATE−TO−SOURCE VOLTAGE (VOLTS), GATE−TO−SOURCE VOLTAGE (VOLTS)
, DRAIN CURRENT (AMPS)
IDD
**----- End of picture text -----**
**==> picture [490 x 630] intentionally omitted <==** **----- Start of picture text -----**
200 200
4.2 V thru 10 V
175 VGS = 4.0 V 175 VDSDS ≥ 10 V
TJ = 25 ° C 3.8 V
150 150
125 3.6 V 125
100 100
3.4 V TJ = 125J = 125 = 125 ° C
75 75
50 3.2 V 50
TJ = 25J = 25 = 25 ° C
25 3.0 V 25
2.8 V TJ = −55J = −55 = −55 ° C
0 0
0 1 2 3 4 5 0 1 2 3 4 5
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)GS, GATE−TO−SOURCE VOLTAGE (VOLTS), GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
0.010 0.004
TJ = 25 ° C
I D = 30 A
0.008 TJ = 25 ° C
0.003
VGS = 4.5 V
0.006
0.002
0.004
VGS = 11.5 V
0.001
0.002
0 0
2 4 6 8 10 12 25 50 75 100 125 150 175 200
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and
Voltage Gate Voltage
1.75 100,000
ID = 30 A VGS = 0 V
1.5 VGS = 10 V
TJ = 150 ° C
1.25
10,000
1.0 TJ = 125 ° C
0.75
1,000
0.5
0.25
0 100
−50 −25 0 25 50 75 100 125 150 0 5 10 15 20 25 30
TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current
Temperature vs. Voltage
, DRAIN CURRENT (AMPS) , DRAIN CURRENT (AMPS)
ID IDD
) � ) �
, DRAIN−TO−SOURCE RESISTANCE ( , DRAIN−TO−SOURCE RESISTANCE (
DS(on) DS(on)
R R
, LEAKAGE (nA)
IDSS
, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
DS(on)
R
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**http://onsemi.com** **4** **NTMFS4833N** ## **TYPICAL PERFORMANCE CURVES** **==> picture [244 x 603] intentionally omitted <==** **----- Start of picture text -----**
8000
7000 C iss TJ = 25 ° C
6000
C iss
5000
4000
Crss
3000
2000
C oss
1000
0 V DS = 0 V V GS = 0 V
10 5 0 5 10 15 20 25
VGS VDS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
1000
VDD = 15 V
ID = 15 A td(off)
VGS = 11.5 V
tf
100
tr
td(on)
10
1 10 100
RG, GATE RESISTANCE ( � )
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
1000
10 � s
100
100 � s
10
1 ms
1 VGS = 20 V
SINGLE PULSE
TC = 25 ° C 10 ms
0.1 RDS(on) LIMIT dc
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.1 1 10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
t, TIME (ns)
ID, DRAIN CURRENT (AMPS)
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**==> picture [244 x 603] intentionally omitted <==** **----- Start of picture text -----**
12
QT
10 VGS
8
6
Q1 Q2
4
2 ID = 30 A
TJ = 25 ° C
0
0 10 20 30 40 50 60 70 80 90
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate−To−Source and Drain−To−Source
Voltage vs. Total Charge
30
VGS = 0 V
25
TJ = 25 ° C
20
15
10
5
0
0 0.2 0.4 0.6 0.8 1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage vs. Current
650
600 ID = 35 A
550
500
450
400
350
300
250
200
150
100
50
0
25 50 75 100 125 150
TJ, STARTING JUNCTION TEMPERATURE ( ° C)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
GS
V
IS, SOURCE CURRENT (AMPS)
AVALANCHE ENERGY (mJ)
, SINGLE PULSE DRAIN−TO−SOURCE
AS
E
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**Figure 11. Maximum Rated Forward Biased Safe Operating Area** **Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature** **http://onsemi.com** **5** **NTMFS4833N** ## **TYPICAL PERFORMANCE CURVES** **==> picture [245 x 170] intentionally omitted <==** **----- Start of picture text -----**
1000
100
25 ° C
100 ° C
10
125 ° C
1
1 10 100 1,000 10,000
PULSE WIDTH ( � s)
ID, DRAIN CURRENT (AMPS)
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**Figure 13. Avalanche Characteristics** **http://onsemi.com** **6** **NTMFS4833N** ## **PACKAGE DIMENSIONS** **==> picture [470 x 466] intentionally omitted <==** **----- Start of picture text -----**
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA−01
ISSUE D
2 X NOTES:
1. DIMENSIONING AND TOLERANCING PER
0.20 C ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
_ D fa A t 3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
2 B 2 X BURRS.
D1 MILLIMETERS
0.20 C
DIM MIN NOM MAX
oe A 0.90 1.00 1.10
A1 0.00 −−− 0.05
E1 4 X b 0.33 0.41 0.51
c 0.23 0.28 0.33
E D 5.15 BSC
2 D1 4.50 4.90 5.10
c D2 3.50 −−− 4.22
A1 E 6.15 BSC
E1 5.50 5.80 6.10
1 2 3 4 E2 3.45 −−− 4.30
e 1.27 BSC
TOP VIEW G 0.51 0.61 0.71
3 X C K 0.51 −−− −−−
0.10 C e SEATINGPLANE L1L 0.510.05 0.610.17 0.710.20
O —<— M 3.00 3.40 3.80
-. [|] A T N DETAIL A L} ———I 0 −−− 12
a 0.10 C
SOLDERING FOOTPRINT*
SIDE VIEW
DETAIL A
3X 4X
1.270 0.750
8X b 4X
1.000
0.10 C A B STYLE 1:
PIN 1. SOURCE
0.05 c L e/2 2. SOURCE
3. SOURCE
1 i tio 4 n 4. GATE 0.965 _o ujo ot
5. DRAIN
K 6. DRAIN 1.330 2X
0.905
f t +_L
2X
E2 0.495 4.530
PIN 5 M
(EXPOSED PAD) L1 3.200
P oo 4 0.475
ee GT
G D2 2X
1.530
BOTTOM VIEW
4.560
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
**----- End of picture text -----**
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