# Power MOSFET, N Channel, 30 V, 170 A, 1450 µohm, DFN, Surface Mount
**URL**: https://novapart.co/products/NTMFS1D7N03CGT1G/power-mosfet-n-channel-30-v-170-a-1450-ohm-dfn
**SKU**: NTMFS1D7N03CGT1G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3900
**Stock**: 25+
**Lead Time**: 2 days (indicative)
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 5Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 87W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 87W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.00145ohm |
| Transistor Case Style | DFN |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 170A |
| Drain Source On State Resistance | 1450µohm |
| Automotive Qualification Standard | - |
| Gate Source Threshold Voltage Max | 2.2V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:3677729RL/)
MOSFET - Power, Single N-Channel, SO8-FL 30 V, 1.74 m 170 A
## NTMFS1D7N03CG
## **Features**
- Wide SOA to Improve Inrush Current Management
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- Advanced Package (5x6 mm) with Excellent Thermal Conduction
- Ultra Low RDS(on) to Improve System Efficiency
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
## **Typical Applications**
• Hot Swap Application
|• Power Load Switch
• Battery Management and Protection
**MAXIMUM RATINGS**(TJ= 25°C unless otherwise noted)
~~—~~|• Power Load Switch
• Battery Management and Protection
**MAXIMUM RATINGS**(TJ= 25°C unless otherwise noted)
~~—~~|• Power Load Switch
• Battery Management and Protection
**MAXIMUM RATINGS**(TJ= 25°C unless otherwise noted)
~~—~~|C unless otherwise noted)|||
|---|---|---|---|---|---|
|**Parameter**
~~—~~|||**Symbol**|**Value**|**Unit**|
|Drain−to−Source Voltage
~~—~~
~~WH~~|||VDSS
~~es~~|30
~~Gs~~|V|
|Gate−to−Source Voltage
~~—~~
~~es~~
~~WH~~|||VGS
~~es~~
~~es~~|±20
~~es~~
~~Gs~~|V
~~es~~|
|Continuous Drain
Current R JC(Note 2)
~~WHa~~|Steady
State
~~|~~|TC= 25°C|ID
~~es~~|170
~~Gs~~|A|
|||TC= 100°C||120
~~Gs~~||
|Power Dissipation
R JC(Note 2)
~~WHa~~
~~po|~~||TC= 25°C|PD
~~es~~|87
~~Gs~~|W|
|Continuous Drain
Current R JA(Note 1)
~~WHa~~
~~po|~~|Steady
State
~~|~~|TA= 25°C|ID
~~es~~|35
~~Gs~~|A|
|||TA= 100°C||25||
|Power Dissipation R JA
~~po|~~||TA= 25°C|PD|3.8|W|
|Pulsed Drain Current
~~po |~~|TA= 25°C, tp= 10 s
~~|~~||IDM
~~en Ge~~|900
~~Ge~~|A|
|Source Current (Body Diode)
~~es~~|||IS
~~es~~
~~en Ge~~|73
~~es~~
~~Ge~~|A
~~es~~|
|Single Pulse Drain−to−Source Avalanche
Energy IL= 50.6 Apk
~~Po~~|||EAS
~~en Ge~~
~~Po~~|128
~~Ge~~
~~Po~~|mJ
~~Po~~|
|Operating Junction and Storage Temperature
Range
~~Po~~|||TJ, Tstg
~~Po~~|−55 to
+175
~~Po~~|°C
~~Po~~|
|Lead Temperature Soldering Reflow for Solder-
ing Purposes (1/8″from case for 10 s)
~~Pe~~|||TL
~~Pe~~|260
~~Pe~~|°C
~~Pe~~|
- Power Load Switch
- Battery Management and Protection
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
**==> picture [193 x 330] intentionally omitted <==**
**----- Start of picture text -----**
V(BR)DSS RDS(ON) MAX ID MAX
30 V 1.74 m @ 10 V 170 A
;a ee ee
D (5)
G (4)
a S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAM
@& D
1
S D
DFN5 S 1D7NG
(SO−8FL) S AYWZZ
CASE 488AA G D
STYLE 1 D
1D7NG = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
**----- End of picture text -----**
## **ORDERING INFORMATION**
See detailed ordering, marking and shipping information on page 5 of this data sheet.
1. Surface−mounted on FR4 board using a 1 in[2] , 2 oz. Cu pad.
2. The entire application environment impacts the thermal resistance values shown. They are not constants and are only valid for the particular conditions noted. Actual continuous current will be limited by thermal & electro−mechanical application board design. R CA is determined by the user’s board design.
Publication Order Number: **NTMFS1D7N03CG/D**
**1**
© Semiconductor Components Industries, LLC, 2020 **November, 2020 − Rev. 2**
**NTMFS1D7N03CG**
## **THERMAL RESISTANCE RATINGS**
|**THERMAL RESISTANCE RATINGS**||||
|---|---|---|---|
|**Parameter**|**Symbol**|**Value**|**Unit**|
|Junction−to−Case − Steady State (Note 1)|R�JC|1.73|°C/W|
|Junction−to−Ambient − Steady State (Note 1)|R�JA|40||
## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified)
|**ELECTRICAL CHARACTERISTICS**(TJ|= 25°C unless|otherwise specified)|otherwise specified)|||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||||
|Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID=|250�A|30|||V|
|Drain−to−Source Breakdown Voltage
Temperature Coefficient|V(BR)DSS/
TJ|ID= 250�A, ref|to 25°C||16||mV/°C|
|Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,
VDS= 30 V|TJ= 25°C|||1.0|�A|
||||TJ= 125°C|||100||
|Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS= 20 V||||100|nA|
|**ON CHARACTERISTICS**||||||||
|Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= 90�A||1.3||2.2|V|
|Threshold Temperature Coefficient|VGS(TH)/TJ|ID= 90�A, ref to 25°C|||−5.1||mV/°C|
|Drain−to−Source On Resistance|RDS(on)|VGS= 10 V, ID= 18 A|||1.45|1.74|m�|
|Forward Transconductance|gFS|VDS= 5 V, ID= 18 A|||46|||
|Gate Resistance|RG|TA= 25°C|||0.8||�|
|**CHARGES & CAPACITANCES**||||||||
|Input Capacitance|CISS|VGS= 0 V, VDS= 15 V, f = 1 MHz|||3780||pF|
|Output Capacitance|COSS||||1770|||
|Reverse Capacitance|CRSS||||50|||
|Total Gate Charge|QG(TOT)|VGS= 10 V, VDS= 15 V; ID= 18 A|||48||nC|
|Threshold Gate Charge|QG(TH)||||7|||
|Gate−to−Source Charge|QGS||||12|||
|Gate−to−Drain Charge|QGD||||3|||
|**SWITCHING CHARACTERISTICS**, VGS= 10 V||||||||
|Turn−On Delay Time|td(ON)|VGS= 10 V, VDS= 15 V,
ID= 18 A, RG= 3�|||16||ns|
|Rise Time|tr||||6|||
|Turn−Off Delay Time|td(OFF)||||39|||
|Fall Time|tf||||6|||
|**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||||
|Forward Diode Voltage|VSD|VGS= 0 V,
IS= 10 A|TJ= 25°C||0.78|1.2|V|
||||TJ= 125°C||0.63|||
|Reverse Recovery Time|tRR|VGS= 0 V, VR= 15 V, IS= 18 A,
dI/dt = 100 A/�s|||55||ns|
|Reverse Recovery Charge|QRR||||45||nC|
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: pulse width � 300 � s, duty cycle � 2%.
4. Switching characteristics are independent of operating junction temperatures.
**www.onsemi.com**
**2**
**NTMFS1D7N03CG**
## **TYPICAL CHARACTERISTICS**
**==> picture [491 x 383] intentionally omitted <==**
**----- Start of picture text -----**
150 150
VGS = 5.5 V to 10 V
135 5.0 V 135 V DS = 3 V
120 120
4.5 V
105 105
90 90
4.0 V
75 75
60 60
3.5 V
45 45 TJ = 25 ° C
30 3.0 V 30
300 150 TJ = 125 ° C TJ = −55 ° C
0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 2 3 4 5
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
25 2.0
TJ = 25 ° C TJ = 25 ° C
ID = 18 A 1.8
20
1.6 V GS = 10 V
15
1.4
10
1.2
5
1.0
0 0.8
3 4 5 6 7 8 9 10 5 20 35 50 65 80 95 110 125 140 155
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
, DRAIN CURRENT (A) , DRAIN CURRENT (A)
ID ID
) � ) �
, DRAIN−TO−SOURCE RESISTANCE (m , DRAIN−TO−SOURCE RESISTANCE (m
DS(on) DS(on)
R R
**----- End of picture text -----**
**Figure 3. On−Resistance vs. Gate−to−Source Voltage**
**Figure 4. On−Resistance vs. Drain Current and Gate Voltage**
**==> picture [489 x 173] intentionally omitted <==**
**----- Start of picture text -----**
1.9 100K TJ = 175 ° C
1.7 VIDGS = 18 A = 10 V 10K T J = 150 ° C
1.5 TJ = 125 ° C
1K
1.3 TJ = 85 ° C
1.1
100
0.9
T J = 25 ° C
10
0.7
0.5 1
−50 −25 0 25 50 75 100 125 150 175 5 10 15 20 25 30
TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
, LEAKAGE (nA)
, NORMALIZED DRAIN−TO− IDSS
SOURCE RESISTANCE
DS(on)
R
**----- End of picture text -----**
**Figure 5. On−Resistance Variation with Temperature**
**Figure 6. Drain−to−Source Leakage Current vs. Voltage**
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**3**
**NTMFS1D7N03CG**
## **TYPICAL CHARACTERISTICS**
**==> picture [240 x 173] intentionally omitted <==**
**----- Start of picture text -----**
10K
CISS
1K
COSS
100
CRSS
10 VGS = 0 V
TJ = 25 ° C
f = 1 MHz
1
0 5 10 15 20 25 30
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
**----- End of picture text -----**
**Figure 7. Capacitance Variation**
**==> picture [233 x 173] intentionally omitted <==**
**----- Start of picture text -----**
10
9
8
7
6
5
4 Q GS Q GD
3
2 V DS = 15 V
TJ = 25 ° C
1 I D = 18 A
0
0 5 10 15 20 25 30 35 40 45 50
QG, TOTAL GATE CHARGE (nC)
, GATE−TO−SOURCE VOLTAGE (V)
GS
V
**----- End of picture text -----**
**Figure 8. Gate−to−Source Voltage vs. Total Charge**
**==> picture [491 x 383] intentionally omitted <==**
**----- Start of picture text -----**
1K 100
VGS = 10 V VGS = 0 V
V DS = 15 V
I D = 18 A
100 10
td(off)
td(on)
10 1
tr
t f
1 0.1 TJ = 125 ° C TJ = 25 ° C TJ = −55 ° C
1 10 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
RG, GATE RESISTANCE ( � ) VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current
vs. Gate Resistance
1000 100
TC = 25 ° C
Single Pulse
V GS ≤ 10 V 10 � s
100
100 � s TJ(initial) = 25 ° C
1 ms
10 Curve is based on 10
10% de−rating from 10 ms
typical failure points 100 ms T J(initial) = 100 ° C
1 RDS(on) Limit 1 s
Thermal Limit
Package Limit
0.1 1
0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10
VDS, DRAIN−TO−SOURCE VOLTAGE (V) TAV, TIME IN AVALANCHE (s)
t, TIME (ns)
, SOURCE CURRENT (A)
IS
, DRAIN CURRENT (A)
, DRAIN CURRENT(A)
IDS
IPEAK
**----- End of picture text -----**
**Figure 11. Maximum Rated Forward Biased Safe Operating Area**
**Figure 12. IPEAK vs. Time in Avalanche**
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**4**
**NTMFS1D7N03CG**
## **TYPICAL CHARACTERISTICS**
**==> picture [489 x 173] intentionally omitted <==**
**----- Start of picture text -----**
100
Duty Cycle = 0.5
10 0.2
0.1
0.05
1 0.02
0.01
0.1
Single Pulse
0.01
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
PULSE TIME (sec)
C/W)
°
R(t) (
**----- End of picture text -----**
**Figure 13. Thermal Characteristics**
## **DEVICE ORDERING INFORMATION**
|**Device**|**Marking**|**Package**|**Shipping**†|
|---|---|---|---|
|NTMFS1D7N03CGT1G|1D7NG|DFN5
(Pb−Free)|1500 / Tape & Reel|
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
**www.onsemi.com**
**5**
**NTMFS1D7N03CG**
## **PACKAGE DIMENSIONS**
**==> picture [471 x 454] intentionally omitted <==**
**----- Start of picture text -----**
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE N
2 X NOTES:
1. DIMENSIONING AND TOLERANCING PER
0.20 C ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
D < A a 3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
2 B 2 X BURRS.
D1 MILLIMETERS
0.20 C
DIM MIN NOM MAX
4 f e ct = A 0.90 1.00 1.10
A1 0.00 −−− 0.05
E1 4 X b 0.33 0.41 0.51
c 0.23 0.28 0.33
E D 5.00 5.15 5.30
2 D1 4.70 4.90 5.10
c D2 3.80 4.00 4.20
A1 E 6.00 6.15 6.30
E1 5.70 5.90 6.10
1 2 3 4 E2 3.45 3.65 3.85
e 1.27 BSC
TOP VIEW G 0.51 0.575 0.71
C K 1.20 1.35 1.50
SEATING L 0.51 0.575 0.71
0.10 C DETAIL A PLANE L1 0.125 REF
M 3.00 3.40 3.80
~. | A —— 0 −−− 12
RECOMMENDED
0.10 C SOLDERING FOOTPRINT* STYLE 1:
PIN 1. SOURCE
= SIDE VIEW 2X = 2. SOURCE
DETAIL A 0.495 4.560 3. SOURCE
2X 4. GATE
8X b 1.530 5. DRAIN
0.10 C A B
e/2 2X
0.05 c
L e 0.475
3.200
1 4
FS | 4.530
K |!
2X 1.330
E2
0.905
PIN 5 M
(EXPOSED PAD) L1 1
|
0.965
4X
G D2 1.000 1.270
4X 0.750 PITCH
BOTTOM VIEW
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
**----- End of picture text -----**
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
## **PUBLICATION ORDERING INFORMATION**
**LITERATURE FULFILLMENT** : **TECHNICAL SUPPORT Email Requests to:** orderlit@onsemi.com **North American Technical Support:** Voice Mail: 1 800−282−9855 Toll Free USA/Canada **ON Semiconductor Website:** www.onsemi.com Phone: 011 421 33 790 2910
◊
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**Europe, Middle East and Africa Technical Support:** Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative
**6**
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