# Power MOSFET, N Channel, 30 V, 433 A, 520 µohm, SOIC, Surface Mount ![Product image](https://novapart.co/image/farnell:3677727/) **URL**: https://novapart.co/products/NTMFS0D6N03CT1G/power-mosfet-n-channel-30-v-433-a-520-ohm-soic **SKU**: NTMFS0D6N03CT1G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.8080 **Stock**: 1000+ **Lead Time**: 2 days (indicative) ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | Lead (25-Jun-2025) | | No. Of Pins | 8Pins | | Channel Type | N Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 200W | | Transistor Mounting | Surface Mount | | Rds(On) Test Voltage | 10V | | Transistor Case Style | SOIC | | Drain Source Voltage Vds | 30V | | Operating Temperature Max | 175°C | | Continuous Drain Current Id | 433A | | Drain Source On State Resistance | 520µohm | | Gate Source Threshold Voltage Max | 2.2V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3677727/) ## MOSFET - Power, Single N-Channel, SO8-FL 30 V, 0.62 m 433 A ## NTMFS0D6N03C ## **Features** - Advanced Package (5x6mm) with Excellent Thermal Conduction ## **www.onsemi.com** - Ultra Low RDS(on) to Improve System Efficiency - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ## **Applications** - ORing **V(BR)DSS RDS(ON) MAX ID MAX** 0.62 m @ 10 V 30 V 433 A 0.9 m @ 4.5 V ~~a~~ - Motor Drive - Power Load Switch D (5−8) • Battery Management and Protection **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise stated) **Parameter Symbol Value Unit** G (4) Drain−to−Source Voltage VDSS 30 V ~~es es~~ Gate−to−Source Voltage VGS ± 20 V ~~«3~~ S (1,2,3) Continuous Drain TC = 25 ° C ID 433 A **N−CHANNEL MOSFET** Current R(Note 2) JC Steady TC =100 ° C 306 ~~TT e-~~ State Power Dissipation TC = 25 ° C PD 200 W **MARKING** R JC (Note 2) **DIAGRAMS** Continuous Drain TA = 25 ° C ID 60 A D Current R(Notes 1, 2)JA Steady TA = 100 ° C 42 **SO−8 FLAT LEAD** SS 0D6N D Power Dissipation State TA = 25 ° C PD 3.9 W **CASE 488AASTYLE 1** S AYWZZ R JA (Notes 1, 2) 1 G D ~~Se~~ D ~~es~~ Pulsed Drain Current TA = 25 ° C, tp = 10 s IDM 900 A A = Assembly Location Single Pulse Drain−to−Source Avalanche EAS 1032 mJ Y = Year Energy (IL = 45.4 Apk) W = Work Week ~~ee~~ Operating Junction and Storage Temperature TJ, T ~~ee~~ STG −55 to ° C ZZ = Lot Traceabililty Range +175 ~~ee~~ Lead Temperature for Soldering Purposes TL 260 ° C ″ **ORDERING INFORMATION** (1/8 from case for 10 s) See detailed ordering, marking and shipping information in the Stresses exceeding those listed in the Maximum Ratings table may damage the ~~ee ee~~ package dimensions section on page 5 of this data sheet. device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1 in[2] pad, 2 oz Cu pad. 2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. Publication Order Number: **NTMFS0D6N03C/D** **1** © Semiconductor Components Industries, LLC, 2020 **October, 2020 − Rev. 0** **NTMFS0D6N03C** ## **THERMAL RESISTANCE MAXIMUM RATINGS** |**THERMAL RESISTANCE MAXIMUM RATINGS**|||| |---|---|---|---| |**Parameter**|**Symbol**|**Value**|**Unit**| |Junction−to−Case – Steady State (Note 1)|R�JC|0.8|°C/W| |Junction−to−Ambient – Steady State (Note 1)|R�JA|38|| |Junction−to−Ambient – Steady State (Note 2)|R�JA|134|°C/W| ## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) |**ELECTRICAL CHARACTERISTICS**(TJ=|25°C unless|otherwise specified)|otherwise specified)||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||||| |Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID=|250�A|30|||V| |Drain−to−Source Breakdown Voltage
Temperature Coefficient|V(BR)DSS/
TJ|ID= 250�A. ref|to 25°C||12||mV/°C| |Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,
VDS= 30 V|TJ= 25°C|||1.0|�A| ||||TJ= 125°C|||100|| |Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS= 20 V||||100|nA| |**ON CHARACTERISTICS**(Note 3)|||||||| |Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= 280�A||1.3||2.2|V| |Threshold Temperature Coefficient|VGS(TH)/TJ|ID= 280�A. ref to 25°C|||−5.7||mV/°C| |Drain−to−Source On Resistance|RDS(on)|VGS= 10 V, ID= 30 A|||0.52|0.62|m�| |Drain−to−Source On Resistance|RDS(on)|VGS= 4.5 V, ID= 30 A|||0.72|0.9|m�| |Forward Transconductance|gFS|VDS= 3 V, ID= 30 A|||150||S| |Gate Resistance|RG|TA= 25°C|||0.4||�| |**CHARGES AND CAPACITANCES**|||||||| |Input Capacitance|CISS|VGS= 0 V, VDS= 15 V, f = 1 MHz|||10500||pF| |Output Capacitance|COSS||||5740||| |Reverse Transfer Capacitance|CRSS||||161||| |Total Gate Charge|QG(TOT)|VGS= 4.5 V, VDS= 15 V; ID= 30 A|||65||nC| |Threshold Gate Charge|QG(TH)||||16||| |Gate−to−Drain Charge|QGD||||12||| |Gate−to−Source Charge|QGS||||27||| |Total Gate Charge|QG(TOT)|VGS= 10 V, VDS= 15 V; ID= 30 A|||145||nC| |**SWITCHING CHARACTERISTICS**(Note 4)|||||||| |Turn−On Delay Time|td(ON)|VGS= 10 V, VDS= 15 V,
ID= 30 A, RG= 3.0�|||24||ns| |Rise Time|tr||||12||| |Turn−Off Delay Time|td(OFF)||||89||| |Fall Time|tf||||19||| |**DRAIN−SOURCE DIODE CHARACTERISTICS**|||||||| |Forward Diode Voltage|VSD|VGS= 0 V,
IS= 30 A|TJ= 25°C||0.75|1.2|V| ||||TJ= 125°C||0.60||| |Reverse Recovery Time|tRR|VGS= 0 V, dIS/dt =
VDS= 15 V, IS|100 A/�s,
= 30 A||97||ns| |Reverse Recovery Charge|QRR||||135||nC| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: pulse width � 300 � s, duty cycle � 2%. 4. Switching characteristics are independent of operating junction temperatures. **www.onsemi.com** **2** **NTMFS0D6N03C** ## **TYPICAL CHARACTERISTICS** **==> picture [491 x 594] intentionally omitted <==** **----- Start of picture text -----**
450 450
3.4 V VDS = 3 V
400 400
3.2 V
350 VGS = 10 V to 3.6 V 350
300 300
3.0 V
250 250
200 2.8 V 200
150 150
100 2.6 V 100 TJ = 25 ° C
500 2.4 V 500 TJ = 125 ° C TJ = −55 ° C
0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
2.0 1.0
1.8 T J = 25 ° C TJ = 25 ° C
1.6 ID = 30 A 0.8 V GS = 4.5 V
1.4
1.2 0.6 V GS = 10 V
1.0
0.8 0.4
0.6
0.4 0.2
0.2
0 0
2 3 4 5 6 7 8 9 10 0 50 100 150 200 250 300 350 400
VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and
Voltage Gate Voltage
1.9 1000000
VGS = 10 V
1.7 ID = 30 A 100000 T J = 175 ° C
TJ = 150 ° C
1.5 10000 TJ = 125 ° C
1.3
1000 T J = 85 ° C
1.1
100 TJ = 25 ° C
0.9
0.7 10
0.5 1
−50 −25 0 25 50 75 100 125 150 175 5 10 15 20 25 30
TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
, DRAIN CURRENT (A) , DRAIN CURRENT (A)
ID ID
) �
) �
, DRAIN−TO−SOURCE RESISTANCE (m
, DRAIN−TO−SOURCE RESISTANCE (m
DS(on)
R
DS(on)
R
, LEAKAGE (nA)
, NORMALIZED DRAIN−TO− SOURCE RESISTANCE IDSS
DS(on)
R
**----- End of picture text -----**
**Figure 5. On−Resistance Variation with Temperature** **==> picture [187 x 20] intentionally omitted <==** **----- Start of picture text -----**
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
**----- End of picture text -----**
**www.onsemi.com** **3** **NTMFS0D6N03C** ## **TYPICAL CHARACTERISTICS** **==> picture [245 x 592] intentionally omitted <==** **----- Start of picture text -----**
100,000
C ISS
10,000
COSS
1000
100 VGS = 0 V CRSS
TJ = 25 ° C
f = 1 MHz
10
0 5 10 15 20 25 30
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
1000
VGS = 10 V
VDS = 15 V td(off)
I D = 30 A
100 tf
td(on)
10 tr
1
1 10 100
RG, GATE RESISTANCE ( � )
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
10 � s
100
100 � s
10
TC = 25 ° C 1 ms
Single Pulse 10 ms
1 V GS ≤ 10 V 100 ms
RDS(on) Limit 1 s
Thermal Limit
Package Limit
0.1
0.1 1 10 100
VDS, DRAIN−TO−SOUORCE VOLTAGE (V)
C, CAPACITANCE (pF)
t, TIME (ns)
, DRAIN CURRENT (A)
IDS
**----- End of picture text -----**
**Figure 11. Safe Operating Area** **==> picture [241 x 173] intentionally omitted <==** **----- Start of picture text -----**
10
9
8
7
6
5
4 QGS QGD
3
2 VDS = 15 V
ID = 30 A
1 TJ = 25 ° C
0
0 30 60 90 120 150
QG, TOTAL GATE CHARGE (nC)
, GATE−TO−SOURCE VOLTAGE (V)
GS
V
**----- End of picture text -----**
**Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge** **==> picture [241 x 384] intentionally omitted <==** **----- Start of picture text -----**
100
VGS = 0 V
10
1
0.1 TJ = 125 ° C TJ = 25 ° C TJ = −55 ° C
0.3 0.4 0.5 0.6 0.7 0.8 0.9
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
100
TJ(initial) = 100 ° C TJ(initial) = 25 ° C
10
1
0.00001 0.0001 0.001 0.01 0.1 1 10
TIME IN AVALANCHE (s)
, SOURCE CURRENT (A)
IS
, DRAIN CURRENT (A)
IPEAK
**----- End of picture text -----**
**Figure 12. IPEAK vs. Time in Avalanche** **www.onsemi.com** **4** **NTMFS0D6N03C** ## **TYPICAL CHARACTERISTICS** **==> picture [491 x 174] intentionally omitted <==** **----- Start of picture text -----**
1
50% Duty Cycle
20%
0.1 10%
5%
2%
0.01 1%
Single Pulse
0.001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1
PULSE TIME (sec)
C/W)
°
(
JC
�
Z
**----- End of picture text -----**
**Figure 13. Thermal Characteristics** ## **DEVICE ORDERING INFORMATION** |**Device**|**Marking**|**Package**|**Shipping**†| |---|---|---|---| |NTMFS0D6N03CT1G|0D6N|DFN5
(Pb−Free)|1500 / Tape & Reel| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. **www.onsemi.com** **5** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [482 x 619] intentionally omitted <==** **----- Start of picture text -----**
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
+
1 ISSUE N
SCALE 2:1 DATE 25 JUN 2018
2 X NOTES:
1. DIMENSIONING AND TOLERANCING PER
0.20 C ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
D = A o 3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
2 B 2 X BURRS.
D1 MILLIMETERS
0.20 C
DIM MIN NOM MAX
fet = A 0.90 1.00 1.10
A1 0.00 −−− 0.05
E1 4 X b 0.33 0.41 0.51
c 0.23 0.28 0.33
E D 5.00 5.15 5.30
2 D1 4.70 4.90 5.10
c D2 3.80 4.00 4.20
A1 E 6.00 6.15 6.30
E1 5.70 5.90 6.10
1 2 3 4 E2 3.45 3.65 3.85
e 1.27 BSC
TOP VIEW G 0.51 0.575 0.71
C K 1.20 1.35 1.50
SEATING L 0.51 0.575 0.71
0.10 C DETAIL A PLANE L1 0.125 REF
M 3.00 3.40 3.80
~. | A —— 0 −−− 12
0.10 C GENERIC
Sy SIDE VIEW SS MARKING DIAGRAM*
DETAIL A
1
8X b XXXXXX
0.10 C A B e/2 AYWZZ
0.05 c
L e
1 4 XXXXXX = Specific Device Code
P o {IF S
K A = Assembly Location
Y = Year
RECOMMENDED W = Work Week
E2 SOLDERING FOOTPRINT* ZZ = Lot Traceability
(EXPOSED PAD)PIN 5 L1 M 0.4952X 4.560 *This information is generic. Please refer to
2X device data sheet for actual part marking.
a
1.530 Pb−Free indicator, “G” or microdot “ ”,
G = D2 2X may not follow the Generic Marking.may or may not be present. Some products
BOTTOM VIEW 0.475
an 7a 3.200 |
4.530
| |
STYLE 1: STYLE 2: 2X 1.330
PIN 1. 2. SOURCESOURCE PIN 1. 2. ANODEANODE 0.905
3. SOURCE 3. ANODE 1
4. GATE 4. NO CONNECT
5. DRAIN 5. CATHODE 0.965
“ 4X g o l a
1.000 1.270
4X 0.750 one PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98AON14036D Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DESCRIPTION: DFN5 5x6, 1.27P (SO−8FL) PAGE 1 OF 1
**----- End of picture text -----**
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