# Power MOSFET, N Channel, 80 V, 126 A, 3400 µohm, Power 56, Surface Mount ![Product image](https://novapart.co/image/farnell:2768335/) **URL**: https://novapart.co/products/NTMFS08N004C/power-mosfet-n-channel-80-v-126-a-3400-ohm-56 **SKU**: NTMFS08N004C **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €1.3600 **Stock**: 1000+ **Lead Time**: 2 days (indicative) ## Description Transistor Polarity:N Channel; Continuous Drain Current Id:126A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0034ohm; Rds(on) Test Voltag; Available until stocks are exhausted ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | Lead (27-Jun-2024) | | No. Of Pins | 5Pins | | Channel Type | N Channel | | Product Range | PowerTrench | | Qualification | - | | Power Dissipation | 125W | | Transistor Mounting | Surface Mount | | Rds(On) Test Voltage | 10V | | Transistor Case Style | Power 56 | | Drain Source Voltage Vds | 80V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 126A | | Drain Source On State Resistance | 3400µohm | | Gate Source Threshold Voltage Max | 3.1V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2768335/) ## NTMFS08N004C MOSFET – Power Trench, N‐Channel, Shielded Gate ~~—~~ 80 V, 126 A, 4.0 m ## **General Description** This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode. ## **Features** ## **www.onsemi.com** |**VDS**|**RDS(ON) MAX**|**ID MAX**| |---|---|---| |80 V|4.0 m @ 10 V|126 A| ||12.5 m @ 6 V|| - Shielded Gate MOSFET Technology • Max rDS(on) = 4.0 m at VGS = 10 V, ID = 44 A S (1, 2, 3) • Max rDS(on) = 12.5 m at VGS = 6 V, ID = 22 A • 50% Lower Qrr than Other MOSFET Suppliers G (4) • Lowers Switching Noise/EMI • MSL1 Robust Package Design • 100% UIL Tested a ~~:~~ • These Devices are Pb−Free and are RoHS Compliant D (5, 6, 7, 8) **Applications N-CHANNEL MOSFET** • Primary DC−DC MOSFET • Synchronous Rectifier in DC−DC and AC−DC • Motor Drive • Solar Pin 1 **MAXIMUM RATINGS** (TA = 25 ° C unless otherwise noted) Top Bottom **Power 56 Symbol Parameter Value Unit (PQFN8)** VDS Drain to Source Voltage 80 V **CASE 483AE** VGS Gate to Source Voltage ± 20 V **MARKING DIAGRAM** ID Drain Current: A Continuous, TC = 25 ° C (Note 5) 126 Continuous, TC = 100 ° C (Note 5) 80 S D Continuous, TA = 25 ° C (Note 1a) 18 S $Y&Z&3&K D Pulsed (Note 4) 637 NTMFS S D EAS Single Pulse Avalanche Energy 486 mJ 08N004C (Note 3) G D PD Power Dissipation: W TC = 25 ° C 125 $Y = ON Semiconductor Logo TA = 25 ° C (Note 1a) 2.5 &Z = Assembly Plant Code TJ, TSTG Operating and Storage Junction −55 to +150 ° C &3&K = Lot Code= Numeric Date Code Temperature Range ~~HC~~ NTMFS08N004C = Specific Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ## **ORDERING INFORMATION** See detailed ordering and shipping information on page 3 of this data sheet. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2017 **May, 2019 − Rev. 2** **NTMFS08N004C/D** **NTMFS08N004C** ## **THERMAL CHARACTERISTICS** |**Symbol**|**Parameter**|**Value**|**Unit**| |---|---|---|---| |R�JC|Thermal Resistance, Junction to Case|1.0|°C/W| |R�JA|Thermal Resistance, Junction to Ambient (Note 1a)|50|| **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) |**ELECTRIC**|**AL CHARACTERISTICS**(TJ= 25°C unle|ss otherwise noted)||||| |---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test Condition**|**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**||||||| |BVDSS|Drain to Source Breakdown Voltage|ID= 250�A, VGS= 0 V|80|||V| |�BVDSS
/�TJ|Breakdown Voltage Temperature
Coefficient|ID= 250�A, referenced to 25°C||40||mV/°C| |IDSS|Zero Gate Voltage Drain Current|VDS= 64 V, VGS= 0 V|||1|�A| |IGSS|Gate to Source Leakage Current|VGS=±20 V, VDS= 0 V|||±100|nA| |**ON CHARACTERISTICS**||||||| |VGS(th)|Gate to Source Threshold Voltage|VGS= VDS, ID= 250�A|2.0|3.1|4.0|V| |�VGS(th)
/�TJ|Gate to Source Threshold Voltage
Temperature Coefficient|ID= 250�A, referenced to 25°C||−8.3||mV/°C| |rDS(on)|Static Drain to Source On Resistance|VGS= 10 V, ID= 44 A||3.4|4.0|m�| |||VGS= 6 V, ID= 22 A||5.2|12.5|| |||VGS= 10 V, ID= 44 A, TJ= 125°C||5.8|7.8|| |gFS|Forward Transconductance|VDS= 5 V, ID= 44 A||98||S| |**DYNAMIC CHARACTERISTICS**||||||| |Ciss|Input Capacitance|VDS= 40 V, VGS= 0 V, f = 1 MHz||3035|5100|pF| |Coss|Output Capacitance|||940|1580|pF| |Crss|Reverse Transfer Capacitance|||27|50|pF| |Rg|Gate Resistance||0.1|1.1|2.3|�| |**SWITCHING CHARACTERISTICS**||||||| |td(on)|Turn-On Delay Time|VDD= 40 V, ID= 44 A, VGS= 10 V,
RGEN= 6�||17|30|ns| |tr|Rise Time|||6|12|ns| |td(off)|Turn-Off Delay Time|||25|40|ns| |tf|Fall Time|||4|10|ns| |Qg|Total Gate Charge|VGS= 0 V to 10 V, VDD= 40 V,
ID= 44 A||39|66|nC| |||VGS= 0 V to 6 V, VDD= 40 V,
ID= 44 A||25|41|nC| |Qgs|Gate to Source Charge|VDD= 40 V, ID= 44 A||13||nC| |Qgd|Gate to Drain “Miller” Charge|VDD= 40 V, ID= 44 A||7||nC| |Qoss|Output Charge|VDD= 40 V, VGS= 0 V||55||nC| |Qsync|Total Gate Charge Sync.|VDS= 0 V, ID= 44 A||35||nC| **www.onsemi.com** **2** **NTMFS08N004C** **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) (continued) **Symbol Parameter Test Condition Min Typ Max Unit** ~~a~~ **DRAIN-SOURCE DIODE CHARACTERISTICS** VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 2.1 A (Note 2) 0.7 1.2 V VGS = 0 V, IS = 44 A (Note 2) 0.8 1.3 ~~Ne aee~~ trr Reverse Recovery Time IF = 22 A, di/dt = 300 A/ s 26 41 ns Qrr Reverse Recovery Charge 48 76 nC ~~eea ee~~ trr Reverse Recovery Time IF = 22 A, di/dt = 1000 A/ s 19 31 ns ~~a~~ Qrr Reverse Recovery Charge 108 174 nC ~~ee a eeee a~~ Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ## NOTES: 1. R 8 JA is determined with the device mounted on a 1 in[2] pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. R 8 CA is determined by the user’s board design. **==> picture [408 x 102] intentionally omitted <==** **----- Start of picture text -----**
a) 50 ° C/W when mounted on b) 125 ° C/W when mounted on
a 1 in [2] pad of 2 oz copper. a minimum pad of 2 oz copper.
oes G DF DS SF SS sede8 G DF DS SF SS
**----- End of picture text -----**
2. Pulse Test: Pulse Width < 300 u s, Duty cycle < 2.0%. 3. EAS of 486 mJ is based on starting TJ = 25 ° C; N-ch: L = 3 mH, IAS = 18 A, VDD = 80 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 57 A. 4. Pulsed Id please refer to Figure 11 SOA graph for more details. 5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design. ## **PACKAGE MARKING AND ORDERING INFORMATION** |**Device**|**Marking**|**Package**|**Reel Size**|**Tape Width**|**Quantity**| |---|---|---|---|---|---| |NTMFS08N004C|NTMFS08N004C|Power 56 (PQFN8)
(Pb-Free / Halogen Free)|13″|12 mm|3000 units| **www.onsemi.com** **3** **NTMFS08N004C** ## **TYPICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) **==> picture [210 x 557] intentionally omitted <==** **----- Start of picture text -----**
300
VGS = 10 V
250 PULSE DURATION = 80 � s
DUTY CYCLE = 0.5% MAX
VGS = 8 V
200
150 V GS = 6 V
100
VGS = 5.5 V
50
VGS = 5 V
0
0 1 2 3 4 5
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
2.0
1.8 ID = 44 A
VGS = 10 V
1.6
1.4
1.2
1.0
0.8
0.6
−75 −50 −25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ( [o] C)
Figure 3. Normalized On-Resistance vs.
Junction Temperature
300
PULSE DURATION = 80 � s
DUTY CYCLE = 0.5% MAX
240
VDS = 5 V
180
TJ = 150 [o] C
120
TJ = 25 [o] C
60
TJ = −55 [o] C
0
3 4 5 6 7 8 9
VGS, GATE TO SOURCE VOLTAGE (V)
, DRAIN CURRENT (A)
ID
NORMALIZED
DRAIN TO SOURCE ON−RESISTANCE
, DRAIN CURRENT (A)
ID
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**Figure 5. Transfer Characteristics** **==> picture [208 x 557] intentionally omitted <==** **----- Start of picture text -----**
5
VGS = 5 V
4
VGS = 5.5 V
3
VGS = 6 V
2
VGS = 8 V
1 VGS = 10 V
PULSE DURATION = 80 � s
DUTY CYCLE = 0.5% MAX
0
0 50 100 150 200 250 300
ID, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance vs. Drain
Current and Gate Voltage
25
PULSE DURATION = 80 � s
DUTY CYCLE = 0.5% MAX
20
ID = 44 A
15
10
TJ = 125 [o] C
5
TJ = 25 [o] C
0
4 5 6 7 8 9 10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs. Gate to Source
Voltage
300
100 V GS = 0 V
10
TJ = 150 [o] C
1
TJ = 25 [ o] C
0.1
0.01 TJ = −55 [o] C
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
NORMALIZED
DRAIN TO SOURCE ON−RESISTANCE
) �
m
(
DRAIN TO
rDS(on),
SOURCE ON−RESISTANCE
, REVERSE DRAIN CURRENT (A)
IS
**----- End of picture text -----**
**Figure 6. Source to Drain Diode Forward Voltage vs. Source Current** **www.onsemi.com** **4** **NTMFS08N004C** ## **TYPICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) **==> picture [197 x 152] intentionally omitted <==** **----- Start of picture text -----**
10
ID = 44 A
VDD = 30 V
8
VDD = 40 V
6
VDD = 50 V
4
2
0
0 8 16 24 32 40
Qg, GATE CHARGE (nC)
, GATE TO SOURCE VOLTAGE (V)
GS
V
**----- End of picture text -----**
**Figure 7. Gate Charge Characteristics** **==> picture [204 x 149] intentionally omitted <==** **----- Start of picture text -----**
10000
Ciss
1000 Coss
100
Crss
10
f = 1 MHz
V GS = 0 V
1
0.1 1 10 80
VDS, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
**----- End of picture text -----**
**Figure 8. Capacitance vs. Drain to Source Voltage** **==> picture [207 x 354] intentionally omitted <==** **----- Start of picture text -----**
100
TJ = 25 [ o] C
10 TJ = 100 [o] C
T J = 125 [o] C
1
0.001 0.01 0.1 1 10 100 1000
tAV, TIME IN AVALANCHE (ms)
Figure 9. Unclamped Inductive
Switching Capability
1000
10 � s
100
10 THIS AREA IS 100 � s
LIMITED BY r
DS(on)
SINGLE PULSE 1 ms
1 TJ = MAX RATED 10 ms
R � JC = 1.0 [o] C/W CURVE BENT TO 100 ms/DC
T C = 25 [o] C MEASURED DATA
0.1
0.1 1 10 100 500
VDS, DRAIN to SOURCE VOLTAGE (V)
, AVALANCHE CURRENT (A)
IAS
, DRAIN CURRENT (A)
ID
**----- End of picture text -----**
**==> picture [203 x 155] intentionally omitted <==** **----- Start of picture text -----**
150
R � JC = 1.0 [o] C/W
125
100
VGS = 10 V
75
50
VGS = 6 V
25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE ( oC)
DRAIN CURRENT (A)
I,D
**----- End of picture text -----**
**Figure 10. Maximum Continuous Drain Current vs. Case Temperature** **==> picture [212 x 153] intentionally omitted <==** **----- Start of picture text -----**
100000
SINGLE PULSE
R � JC = 1.0 [o] C/W
10000 TC = 25 [o] C
1000
100
10
10−5 10−4 10−3 10−2 10−1 1
t, PULSE WIDTH (sec)
PEAK TRANSIENT POWER (W)
(PK),
P
**----- End of picture text -----**
**Figure 11. Forward Bias Safe Operating Area** **Figure 12. Single Pulse Maximum Power Dissipation** **www.onsemi.com** **5** **NTMFS08N004C** ## **TYPICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) **==> picture [435 x 164] intentionally omitted <==** **----- Start of picture text -----**
2
DUTY CYCLE−DESCENDING ORDER
1
D = 0.5
0.1 0.2 PDM
0.1
0.05
0.02 t 1
0.01 t 2
0.01 NOTES:
SINGLE PULSE Z � JC(t) = r(t) x R � JC
R � JC = 1.0 [o] C/W
Peak T J = P DM x Z � JC (t) + T C
Duty Cycle, D = t 1 / t 2
0.001
10−5 10−4 10−3 10−2 10−1 1
t, RECTANGULAR PULSE DURATION (sec)
THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE TRANSIENT
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**Figure 13. Junction-to-Case Transient Thermal Response Curve** POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. **www.onsemi.com** **6** ## MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [78 x 29] intentionally omitted <==** **----- Start of picture text -----**
PQFN8 5X6, 1.27P
CASE 483AE
ISSUE C
**----- End of picture text -----**
## DATE 21 JAN 2022 ## **DOCUMENT NUMBER: 98AON13655G** ## **PQFN8 5X6, 1.27P** ## **DESCRIPTION:** Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **PAGE 1 OF 1** **onsemi** and are trademarks of Semiconductor Components Industries, LLC dba onsemi **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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