# Power MOSFET, N Channel, 100 V, 54 A, 9700 µohm, DFN, Surface Mount ![Product image](https://novapart.co/image/farnell:3528505/) **URL**: https://novapart.co/products/NTMFS015N10MCLT1G/power-mosfet-n-channel-100-v-54-a-9700-ohm-dfn **SKU**: NTMFS015N10MCLT1G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.5060 **Stock**: 1000+ **Lead Time**: 134 days (indicative) ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | Lead (25-Jun-2025) | | No. Of Pins | 5Pins | | Channel Type | N Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 79W | | Transistor Mounting | Surface Mount | | Rds(On) Test Voltage | 10V | | Transistor Case Style | DFN | | Drain Source Voltage Vds | 100V | | Operating Temperature Max | 175°C | | Continuous Drain Current Id | 54A | | Drain Source On State Resistance | 9700µohm | | Gate Source Threshold Voltage Max | 1.5V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3528505/) ## MOSFET - Power, Single N-Channel ## 100 V, 12.2 m 54 A ## NTMFS015N10MCL ## **Features** - Small Footprint (5x6 mm) for Compact Design **www.onsemi.com** - Low R to Minimize Conduction Losses DS(on) |**V(BR)DSS**
**RDS(ON) MAX**
**ID MAX**
100 V
12.2 m @ 10 V
54 A
~~ft —__} __~~|**V(BR)DSS**
**RDS(ON) MAX**
**ID MAX**
100 V
12.2 m @ 10 V
54 A
~~ft —__} __~~|**V(BR)DSS**
**RDS(ON) MAX**
**ID MAX**
100 V
12.2 m @ 10 V
54 A
~~ft —__} __~~|**V(BR)DSS**
**RDS(ON) MAX**
**ID MAX**
100 V
12.2 m @ 10 V
54 A
~~ft —__} __~~|**V(BR)DSS**
**RDS(ON) MAX**
**ID MAX**
100 V
12.2 m @ 10 V
54 A
~~ft —__} __~~|**V(BR)DSS**
**RDS(ON) MAX**
**ID MAX**
100 V
12.2 m @ 10 V
54 A
~~ft —__} __~~|**V(BR)DSS**
**RDS(ON) MAX**
**ID MAX**
100 V
12.2 m @ 10 V
54 A
~~ft —__} __~~| |---|---|---|---|---|---|---| ||18.3 m @ 4.5 V|||||| |||||||| |G (4)
S (1,2,3)
D (5,6)
~~re~~||||||| - Low QG and Capacitance to Minimize Driver Losses - Primary DC−DC MOSFET - Synchronous Rectifier in DC−DC and AC−DC - Motor Drive - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant |**Parameter**
~~es~~
~~te~~|**Parameter**
~~es~~
~~te~~|**Parameter**
~~es~~
~~te~~|**Symbol**
~~es~~
~~ee~~
~~te~~|**Value**
~~es~~
~~Ge~~|**Unit**
~~es~~| |---|---|---|---|---|---| |Drain−to−Source Voltage
~~te~~|||VDSS
~~ee~~
~~te~~|100
~~Ge~~|V| |Gate−to−Source Voltage
~~te~~
~~pf~~|||VGS
~~ee~~
~~te~~|±20
~~Ge~~|V| |Continuous Drain
Current R JC
(Notes 1, 3)
~~te~~
~~pf~~|Steady
State
~~te~~
~~pf~~
~~re~~
~~Hfpi~~|TC= 25°C
~~te~~|ID
~~ee~~
~~te~~|54
~~Ge~~|A| |||TC= 100°C||38|| |Power Dissipation
R JC(Note 1)
~~pf~~
~~re~~
~~Hf~~||TC= 25°C
~~re~~
~~pi~~|PD
~~re~~
~~pitt~~|79
~~re~~
~~tt~~|W
~~re~~
~~tt~~| |Continuous Drain
Current R JA
(Notes 1, 2, 3)
~~pf~~
~~Hf~~|Steady
State
~~pf~~
~~Hfpi~~
~~pftt~~|TA= 25°C
~~pi~~|ID
~~pitt~~|10.5
~~tt~~|A
~~tt~~| |Power Dissipation
R JA(Notes 1, 2)
~~Hf~~
~~pf~~||TA= 25°C
~~pi~~
~~tt~~|PD
~~pitt~~
~~tttt~~|3.0
~~tt~~
~~tt~~|W
~~tt~~
~~tt~~| |Pulsed Drain Current
~~Hf~~
~~pf~~|TA= 25°C, tp= 10 s
~~Hf pi~~
~~pftt~~||IDM
~~pi tt~~
~~tttt~~|423
~~tt~~
~~tt~~|A
~~tt ~~
~~tt~~| |Operating Junction and Storage Temperature
Range
~~pf tt~~
~~Po~~|||TJ, Tstg
~~tt tt~~
~~Po~~|−55 to
+175
~~tt~~
~~Po~~|°C
~~tt~~
~~Po~~| |Single Pulse Drain−to−Source Avalanche
Energy (L = 3 mH, IAS= 6 A)
~~Po~~|||EAS
~~Po~~|54
~~Po~~|mJ
~~Po~~| |Lead Temperature for Soldering Purposes
(1/8″from case for 10 s)
~~Po~~|||TL
~~Po~~|260
~~Po~~|°C
~~Po~~| ## **N−CHANNEL MOSFET** **==> picture [165 x 143] intentionally omitted <==** **----- Start of picture text -----**
MARKING
DIAGRAM
D
1 S D
DFN5 S XXXXXX
=> CASE 488AA S AYWZZ _
STYLE 1 G D
D
XXXXXX = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
**----- End of picture text -----**
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ## **ORDERING INFORMATION** See detailed ordering, marking and shipping information in the package dimensions section on page 3 of this data sheet. ## **THERMAL RESISTANCE MAXIMUM RATINGS** ||~~ee Ge~~|~~Ge~~|| |---|---|---|---| |**Parameter**
~~es~~|**Symbol**
~~es~~
~~ee Ge~~|**Value**
~~es~~
~~Ge~~|**Unit**
~~es~~| |Junction−to−Case − Steady State|R JC
~~ee Ge~~|1.9
~~Ge~~|°C/W| |Junction−to−Ambient − Steady State (Note 2)|R JA|50|| 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm[2] , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Publication Order Number: **NTMFS015N10MCL/D** **1** © Semiconductor Components Industries, LLC, 2018 **April, 2020 − Rev. 2** ## **NTMFS015N10MCL** ## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) |**ELECTRICAL CHARACTERISTICS**(TJ|= 25°C unless|otherwise specified)|otherwise specified)||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||||| |Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID=|250�A|100|||V| |Drain−to−Source Breakdown Voltage
Temperature Coefficient|V(BR)DSS/
TJ||||60||mV/°C| |Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,
VDS= 100 V|TJ= 25°C|||1.0|�A| ||||TJ= 125°C|||250|| |Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS|= 20 V|||100|nA| |**ON CHARACTERISTICS**(Note 4)|||||||| |Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID=|77�A|1|1.5|3|V| |Threshold Temperature Coefficient|VGS(TH)/TJ||||−5.0||mV/°C| |Drain−to−Source On Resistance|RDS(on)|VGS= 10 V|ID= 14 A||9.7|12.2|m�| |||VGS= 4.5 V|ID= 11 A||13.3|18.3|| |Forward Transconductance|gFS|VDS=5 V, ID=|14 A||51||S| |**CHARGES, CAPACITANCES & GATE RESISTANCE**|||||||| |Input Capacitance|CISS|VGS= 0 V, f = 1 MHz, VDS= 50 V|||1338||pF| |Output Capacitance|COSS||||521||| |Reverse Transfer Capacitance|CRSS||||9.0||| |Gate Resistance|RG|||0.1|0.5|3|�| |Total Gate Charge|QG(TOT)|VGS= 4.5 V, VDS= 50 V; ID= 14 A|||9.0||nC| |Total Gate Charge|QG(TOT)|VGS= 10 V, VDS= 50 V; ID= 14 A|||19||nC| |Threshold Gate Charge|QG(TH)|VGS= 10 V, VDS= 50 V; ID= 14 A|||2.0||nC| |Gate−to−Source Charge|QGS||||3.0||| |Gate−to−Drain Charge|QGD||||3.0||| |Plateau Voltage|VGP||||2.7||V| |Output Charge|QOSS|VGS= 0 V, VDS= 50 V|||35||nC| |Total Gate Charge Sync|QSYNC|VGS= 0 to 10 V, VDS= 0 V|||17||nC| |**SWITCHING CHARACTERISTICS**(Note 5)|||||||| |Turn−On Delay Time|td(ON)|VGS= 10 V, VDS= 50 V,
ID= 14 A, RG= 6.0�|||9.0||ns| |Rise Time|tr||||10||| |Turn−Off Delay Time|td(OFF)||||25||| |Fall Time|tf||||5.0||| |**DRAIN−SOURCE DIODE CHARACTERISTICS**|||||||| |Source to Drain Diode Forward Voltage|VSD|VGS= 0 V, IS= 2 A
(Note 7)|||0.7|1.2|V| |||VGS= 0 V, IS= 14 A
(Note 7)|||0.83|1.3|| |Reverse Recovery Time|trr|IF= 7 A, di/dt = 300 A/�s|||20||ns| |Reverse Recovery Charge|Qrr||||33||nC| |Reverse Recovery Time|trr|IF= 7 A, di/dt = 1000 A/�s|||14||ns| |Reverse Recovery Charge|Qrr||||76||nC| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width � 300 � s, duty cycle � 2%. 5. Switching characteristics are independent of operating junction temperatures. **www.onsemi.com** **2** **NTMFS015N10MCL** NOTES: 6. R 6 JA is determined with the device mounted on a 1 in[2] pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. R 6 CA is determined by the user’s board design. **==> picture [427 x 119] intentionally omitted <==** **----- Start of picture text -----**
a) 50 ° C/W when mounted on b) 125 ° C/W when mounted on
a 1 in [2] pad of 2 oz copper. a minimum pad of 2 oz copper.
00000
G DF DS SF SS G DF DS SF SS
**----- End of picture text -----**
7. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. " 8. EAS of 54 mJ is based on starting TJ = 25 ° C; L = 3 mH, IAS = 6 A, VDD = 100 V, VGS = 10 V. 9. Pulsed ID please refer to Figure 11 SOA graph for more details. - 10.Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro−mechanical application board design. ## **DEVICE ORDERING INFORMATION** |**Device**|**Marking**|**Package**|**Shipping**†| |---|---|---|---| |NTMFS015N10MCLT1G|015L10|DFN5
(Pb−Free)|1500 / Tape & Reel| - †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. **www.onsemi.com** **3** **NTMFS015N10MCL** **TYPICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) **==> picture [198 x 150] intentionally omitted <==** **----- Start of picture text -----**
150
VGS = 10 V VGS = 6 V
VGS = 8 V
100 V GS = 4.5 V
VGS = 3.5 V
50
VGS = 3 V
Pulse Duration = 80 s �
Duty Cycle = 0.5% Max
0
0 1 2 3 4 5
VDS , DRAIN TO SOURCE VOLTAGE (V)
, DRAIN CURRENT (A)
ID
**----- End of picture text -----**
**Figure 1. On Region Characteristics** **==> picture [209 x 353] intentionally omitted <==** **----- Start of picture text -----**
2.4
2.2 ID = 14 A
VGS = 10 V
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
−75 −50 −25 0 25 50 75 100 125 150 175
TJ , JUNCTION TEMPERATURE ( [o] C)
Figure 3. Normalized On Resistance
vs. Junction Temperature
150
VDS = 5 V
Pulse Duration = 80 s �
Duty Cycle = 0.5% Max
100
50
TJ = 25 [o] C
TJ = 175 [o] C
TJ = −55 [o] C
0
1 2 3 4 5
VGS, GATE TO SOURCE VOLTAGE (V)
NORMALIZED
DRAIN TO SOURCE ON−RESISTANCE
, DRAIN CURRENT (A)
ID
**----- End of picture text -----**
**Figure 5. Transfer Characteristics** **==> picture [209 x 558] intentionally omitted <==** **----- Start of picture text -----**
3.0
VGS = 3 V VGS = 3.5 V VGS = 4.5 V
2.5
Pulse Duration = 80 s � VGS = 6 V
Duty Cycle = 0.5% Max
2.0
VGS = 8 V
1.5
VGS = 10 V
1.0
0 50 100 150
ID , DRAIN CURRENT (A)
Figure 2. Normalized On−Resistance
vs. Drain Current and Gate Voltage
150
ID = 14 A
Pulse Duration = 80 s �
Duty Cycle = 0.5% Max
100
50
TJ = 150 [o] C
TJ = 25 [o] C
0
1 2 3 4 5 6 7 8 9 10
VGS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance
vs. Gate to Source Voltage
100
VGS = 0 V
10
1
TJ = 175 [o] C
0.1 TJ = 25 [ o] C
0.01
TJ = −55 [o] C
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
NORMALIZED
DRAIN TO SOURCE ON−RESISTANCE
) �
m
(
DRAIN TO
rDS(on),
SOURCE ON−RESISTANCE
, REVERSE DRAIN CURRENT (A)
IS
**----- End of picture text -----**
**Figure 6. Source to Drain Diode Forward Voltage vs. Source Current** **www.onsemi.com** **4** **NTMFS015N10MCL** ## **TYPICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) **==> picture [198 x 352] intentionally omitted <==** **----- Start of picture text -----**
10
ID = 14 A
8
VDD = 25 V
6
VDD = 50 V
4
VDD = 75 V
2
0
0 5 10 15 20
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
100
TJ = 25 [ o] C
10
TJ = 100 [o] C
TJ = 150 [o] C
1
0.001 0.01 0.1 1 10
tAV, TIME IN AVALANCHE (ms)
, GATE TO SOURCE VOLTAGE (V)
GS
V
, AVALANCHE CURRENT (A)
IAS
**----- End of picture text -----**
**==> picture [203 x 147] intentionally omitted <==** **----- Start of picture text -----**
10000
C iss
1000
Coss
100
Crss
10
f = 1 MHz
V GS = 0 V
1
0.1 1 10 100
VDS, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
**----- End of picture text -----**
**Figure 8. Capacitance vs. Drain to Source Voltage** **==> picture [200 x 152] intentionally omitted <==** **----- Start of picture text -----**
60
50
VGS = 10 V
40
30 VGS = 4.5 V
20
10
R � JC = 1.9 [o] C/W
0
25 50 75 100 125 150 175
TC , CASE TEMPERATURE ( o C)
DRAIN CURRENT (A)
I,D
**----- End of picture text -----**
**Figure 9. Unclamped Inductive Switching Capability** **Figure 10. Maximum Continuous Drain Current vs. Case Temperature** **==> picture [205 x 150] intentionally omitted <==** **----- Start of picture text -----**
1000
SINGLE PULSE
R � JC = 1.9 [o] C/W
100 TC = 25 [o] C
10 � s
10 100 � s
1 ms
1
CURVE BENT TO
10 m s
MEASURED DATA 100 ms/DC
0.1
0.1 1 10 100 200
VDS, DRAIN to SOURCE VOLTAGE (V)
, DRAIN CURRENT (A)
ID
**----- End of picture text -----**
**==> picture [204 x 150] intentionally omitted <==** **----- Start of picture text -----**
10000
SINGLE PULSE
R � JC = 1.9 [o] C/W
T C = 25 [o] C
1000
100
10
0.00001 0.0001 0.001 0.01 0.1 1
t, PULSE WIDTH (sec)
PEAK TRANSIENT POWER (W)
(PK),
P
**----- End of picture text -----**
**Figure 11. Forward Bias Safe Operating Area** **Figure 12. Single Pulse Maximum Power Dissipation** **www.onsemi.com** **5** **NTMFS015N10MCL** ## **TYPICAL CHARACTERISTICS** (continued) **==> picture [437 x 164] intentionally omitted <==** **----- Start of picture text -----**
10
DUTY CYCLE−DESCENDING ORDER
D = 0.5
1
0.2
0.1 PDM
0.05
0.1 0.02
0.01 t1
t 2
SINGLE PULSE
NOTES:
0.01 Z � JC (t) = r(t) x R � JC
R � JC = 1.9 [o] C/W
Peak TJ = PDM x Z � JC (t) + TC
Duty Cycle, D = t1 / t2
0.001
0.00001 0.0001 0.001 0.01 0.1 1
t, PULSE TIME (s)
C/W)
�
JC, EFFECTIVE TRANSIENT
�
Z THERMAL RESISTANCE (
**----- End of picture text -----**
**Figure 13. Junction−to−Case Transient Thermal Response Curve** **www.onsemi.com** **6** **NTMFS015N10MCL** ## **PACKAGE DIMENSIONS** **==> picture [468 x 448] intentionally omitted <==** **----- Start of picture text -----**
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
2 X NOTES:
ISSUE N 1. DIMENSIONING AND TOLERANCING PER
0.20 C ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
D < A a 3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
2 B 2 X BURRS.
D1 MILLIMETERS
0.20 C
DIM MIN NOM MAX
fet —= A 0.90 1.00 1.10
A1 0.00 −−− 0.05
E1 4 X b 0.33 0.41 0.51
c 0.23 0.28 0.33
E D 5.00 5.15 5.30
2 D1 4.70 4.90 5.10
c D2 3.80 4.00 4.20
A1 E 6.00 6.15 6.30
E1 5.70 5.90 6.10
1 2 3 4 E2 3.45 3.65 3.85
e 1.27 BSC
TOP VIEW G 0.51 0.575 0.71
C K 1.20 1.35 1.50
SEATING L 0.51 0.575 0.71
0.10 C DETAIL A PLANE L1 0.125 REF
M 3.00 3.40 3.80
~. | A —— 0 −−− 12
0.10 C RECOMMENDED STYLE 1:
a’ SIDE VIEW DETAIL A 2X SOLDERING FOOTPRINT* Left | PIN 1. 2. 3. JT SOURCESOURCESOURCE |
0.495 4.560 4. GATE
2X 5. DRAIN
8X b 1.530
0.10 C A B
e/2
0.05 c 2X
L e 0.475
1 5 4 | 3.200
4.530
K
E2 2X 1.330
PIN 5 M 0.905
(EXPOSED PAD) i al L1 iaVr ]
a a I f 4 0.965 1
G D2 4X
1.000 1.270
BOTTOM VIEW 4X 0.750 PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
**----- End of picture text -----**
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