# Power MOSFET, P Channel, 30 V, 226 A, 1200 µohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:3766208/)

**URL**: https://novapart.co/products/NTMFS002P03P8ZT1G/power-mosfet-p-channel-30-v-226-a-1200-ohm-soic
**SKU**: NTMFS002P03P8ZT1G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.1400
**Stock**: 200+
**Lead Time**: 2 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 138.9W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 226A |
| Drain Source On State Resistance | 1200µohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3766208/)

## NTMFS002P03P8Z 

## _Product Preview_ Power MOSFET **−30 V, 1.7 m −226 A, Single P−Channel, SO8−FL** 

## **Features** 

## **www.onsemi.com** 

- Ultra Low RDS(on) to Improve System Efficiency 

- Advanced Package Technology in 5x6mm for Space Saving and Excellent Thermal Conduction 

> Excellent Thermal Conduction ~~es~~ **V(BR)DSS RDS(on)** ~~ee ee~~ **ID** • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 1.7 m @ −10 V −30 V −226 A Compliant 2.8 m @ −4.5 V **Typical Applications** • Power Load Switch S (1, 2, 3) • Protection: Reverse Current, Over Voltage, and Reverse Negative Voltage • Battery Management G (4) **P−Channel MOSFET MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) **Parameter Symbol Value Unit** D (5, 6, 7, 8) ~~es es ee~~ : Drain−to−Source Voltage VDSS −30 V **MARKING** Gate−to−Source Voltage VGS 25 V ~~a~~ **DIAGRAM** Continuous Drain CurTC = 25 ° C ID −226 A D rent R JC (Notes 1, 2) Steady TC = 85 ° C −163 S D Power Dissipation R JC State TC = 25 ° C PD 138.9 W **SO−8 FLAT LEAD** 1 S 2P03 (Notes 1, 2) S AYWZZ ~~ps) 4~~ LS **CASE 488AA** __ ~~ec~~ Continuous Drain Cur- ~~ee~~ T ~~ee~~ A = 25 ° C ID −34.6 A **STYLE 1** G D rent R JA (Notes 1, 2) Steady TA = 85 ° C −25 D Power Dissipation R JA State TA = 25 ° C PD 3.3 W AY = Assembly Location= Year (Notes 1, 2) ~~ps) 4~~ W = Work Week ~~Hj}~~ Pulsed Drain CurrentOperating Junction and Storage TemperatureTA = 25 ~~|~~ ° C, tp = 10 s ~~{|~~ TJI, TDMstg ~~|}~~ −55 toTBD ° AC ZZ = Lot Traceability 150 ~~ee~~ Lead Temperature for Soldering Purposes TL 260 ° C **ORDERING INFORMATION** (1/8 ″ from case for 10 s) ~~ee~~ **Device Package Shipping**[[†]] Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be NTMFS002P03P8ZT1G SO8−FL 1500 / Tape & assumed, damage may occur and reliability may be affected. (Pb−Free) Reel **THERMAL RESISTANCE MAXIMUM RATINGS** NTMFS002P03P8ZT3G SO8−FL 5000 / Tape & **Parameter Symbol Value Unit** (Pb−Free) Reel ~~a —a~~ Junction−to−Case − Steady State (Drain) R JC 0.9 ° C/W †For information on tape and reel specifications,including part orientation and tape sizes, pleaseincluding part orientation and tape sizes, please (Note 2) refer to our Tape and Reel Packaging Specification ~~pt~~ Junction−to−Ambient − Steady State (Note 2) R JA 38.3 ° C/W Brochure, BRD8011/D. 

**Device Package Shipping**[[†]] NTMFS002P03P8ZT1G SO8−FL 1500 / Tape & (Pb−Free) Reel NTMFS002P03P8ZT3G SO8−FL 5000 / Tape & (Pb−Free) Reel ~~—a~~ †For information on tape and reel specifications,including part orientation and tape sizes, pleaseincluding part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 

2. Surface−mounted on FR4 board using a 1 in[2] , 2 oz. Cu pad. Assuming a 76mm x 76mm x 1.6mm board. 

This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. 

Publication Order Number: **NTMFS002P03P8Z/D** 

**1** 

© Semiconductor Components Industries, LLC, 2017 **October, 2017 − Rev. P0** 

## **NTMFS002P03P8Z** 

## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTIC**|**S **(TJ= 25°C u|nless otherwise noted)|nless otherwise noted)|||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||||
|Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID= −250�A||−30|||V|
|Drain−to−Source Breakdown Volt-<br>age Temperature Coefficient|V(BR)DSS/<br>TJ|ID= −250�A, ref to 25°C|||TBD||mV/°<br>C|
|Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,<br>VDS= −24 V|TJ= 25°C|||−1.0|�A|
||||TJ= 125°C|||−10||
|Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS=�25 V||||�10|�A|
|**ON CHARACTERISTICS**(Note 3)||||||||
|Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= −250�A||−1.0||−3.0|V|
|Threshold Temperature Coefficient|VGS(TH)/TJ|ID= −250�A, ref to 25°C|||TBD||mV/°C|
|Drain−to−Source On Resistance|RDS(on)|VGS= −10 V, ID= −30 A|||1.2|1.7|m�|
|||VGS= −4.5 V, ID= −23 A|||2.0|2.8||
|Froward Transconductance|gFS|VDS= −5 V, ID= −23 A|||TBD||S|
|**CHARGES AND CAPACITANCES**||||||||
|Input Capacitance|Ciss|VGS= 0 V, f = 1.0 MHz,<br>VDS= −15 V|||14712||pF|
|Output Capacitance|Coss||||4992|||
|Reverse Transfer Capacitance|Crss||||4880|||
|Total Gate Charge|QG(TOT)|VGS= −4.5 V, VDS= −15 V,<br>ID= −23 A|||242||nC|
|Threshold Gate Charge|QG(TH)||||TBD|||
|Gate−to−Source Charge|QGS||||44|||
|Gate−to−Drain Charge|QGD||||154|||
|Total Gate Charge|QG(TOT)|VGS= −10 V, VDS= −15 V,<br>ID= −23 A|||TBD|||
|**SWITCHING CHARACTERISTICS, VGS = 4.5 V**(Note 3)||||||||
|Turn−On Delay Time|td(on)|VGS= −4.5 V, VDS= −15 V,<br>ID= −23 A, RG= 6�|||TBD||ns|
|Rise Time|tr||||TBD|||
|Turn−Off Delay Time|td(off)||||TBD|||
|Fall Time|tf||||TBD|||
|**SWITCHING CHARACTERISTICS, VGS = 10 V**(Note 3)||||||||
|Turn−On Delay Time|td(on)|VGS= −10 V, VDS= −15 V,<br>ID= −23 A, RG= 6�|||TBD||ns|
|Rise Time|tr||||TBD|||
|Turn−Off Delay Time|td(off)||||TBD|||
|Fall Time|tf||||TBD|||
|**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||||
|Forward Diode Voltage|VSD|VGS= 0 V,<br>IS= −23 A|TJ= 25°C||−0.8|−1.3|V|
||||TJ= 125°C||TBD|||
|Reverse Recovery Time|tRR|VGS= 0 V, dls/dt = 100 A/�s,<br>Is= −23 A|||TBD||ns|
|Charge Time|ta||||TBD|||
|Discharge Time|tb||||TBD|||
|Reverse Recovery Charge|QRR||||TBD||nC|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width ≤ 300 � s, Duty Cycle ≤ 2%. 

**www.onsemi.com** 

**2** 

**NTMFS002P03P8Z** 

## **PACKAGE DIMENSIONS** 

**==> picture [475 x 588] intentionally omitted <==**

**----- Start of picture text -----**<br>
DFN5 5x6, 1.27P<br>(SO−8FL)<br>CASE 488AA<br>2 X ISSUE M NOTES:<br>1. DIMENSIONING AND TOLERANCING PER<br>0.20 C ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETER.<br>D < A a 3. DIMENSION D1 AND E1 DO NOT INCLUDE<br>MOLD FLASH PROTRUSIONS OR GATE<br>2 B 2 X BURRS.<br>D1 MILLIMETERS<br>0.20 C<br>DIM MIN NOM MAX<br>fet == A 0.90 1.00 1.10<br>A1 0.00 −−− 0.05<br>E1 4 X b 0.33 0.41 0.51<br>c 0.23 0.28 0.33<br>E D 5.00 5.15 5.30<br>2 D1 4.70 4.90 5.10<br>c D2 3.80 4.00 4.20<br>A1 E 6.00 6.15 6.30<br>E1 5.70 5.90 6.10<br>1 2 3 4 E2 3.45 3.65 3.85<br>e 1.27 BSC<br>TOP VIEW G 0.51 0.575 0.71<br>C K 1.20 1.35 1.50<br>SEATING L 0.51 0.575 0.71<br>0.10 C DETAIL A PLANE L1 0.125 REF<br>a — M 3.00 3.40 3.80<br>A 0  −−− 12<br>0.10 C RECOMMENDED STYLE 1:<br>PIN 1. SOURCE<br>acre SIDE VIEW DETAIL A 2X SOLDERING FOOTPRINT* =  2. 3. SOURCESOURCE<br>0.495 4.560  4. GATE<br> 5. DRAIN<br>2X<br>8X b<br>1.530<br>0.10 C A B<br>e/2<br>0.05 c<br>L e<br>1 “5 4 | 3.200<br>K 4.530<br>ia l |<br>E2 2X 1.330<br>(EXPOSED PAD)PIN 5 L1 M 0.905<br>1<br>a te 0.965<br>G D2 4X<br>1.000 1.270<br>ro BOTTOM VIEW 4X “ 0.750 7a988 PITCH<br>DIMENSIONS: MILLIMETERS<br>*For additional information on our Pb−Free strategy and soldering<br>details, please download the ON Semiconductor Soldering and<br>Mounting Techniques Reference Manual, SOLDERRM/D.<br>ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.<br>ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent<br>coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.<br>ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability<br>arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.<br>Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,<br>regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or<br>specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer<br>application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not<br>designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification<br>in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized<br>application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and<br>expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such<br>claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This<br>literature is subject to all applicable copyright laws and is not for resale in any manner.<br>**----- End of picture text -----**<br>


## **PUBLICATION ORDERING INFORMATION** 

**LITERATURE FULFILLMENT** : **N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Japan Customer Focus Center** For additional information, please contact your local **Email** : orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative 

## **LITERATURE FULFILLMENT** : 

◊ 

**www.onsemi.com** 

**NTMFS002P03P8Z/D** 

**3** 



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