# Power MOSFET, FETKY, P Channel, 30 V, 3.3 A, 0.095 ohm, SOIC, Surface Mount ![Product image](https://novapart.co/image/farnell:3368851RL/) **URL**: https://novapart.co/products/NTMD4184PFR2G/power-mosfet-fetky-p-channel-30-v-33-a-0095-ohm **SKU**: NTMD4184PFR2G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.4850 **Stock**: 1000+ **Lead Time**: 2 days (indicative) ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (15-Jan-2018) | | No. Of Pins | 8Pins | | Channel Type | P Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 1.6W | | Transistor Mounting | Surface Mount | | Rds(On) Test Voltage | 10V | | Transistor Case Style | SOIC | | Drain Source Voltage Vds | 30V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 3.3A | | Drain Source On State Resistance | 0.095ohm | | Gate Source Threshold Voltage Max | 3V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3368851RL/) ## MOSFET – Power, Single, P-Channel, Schottky Diode, Schottky Barrier Diode ~~-30 V, -4.0 A, 20 V, 2.2A~~ ## NTMD4184PF ## **Features** ## **www.onsemi.com** - FETKY Surface Mount Package Saves Board Space |**Features**
• FETKY
Surface Mount Package Saves Board Space||**www.onsemi.com**
**onsemi.com**||| |---|---|---|---|---| |• Independent Pin−Out for MOSFET and Schottky Allowing for||**P−CHANNEL MOSFET**||| |Design Flexibility
• Low RDS(on)MOSFET and Low VFSchottky to Minimize
Conduction Losses
• Optimized Gate Charge to Minimize Switching Losses||−30 V
165 m @ −4.5 V
95 m @ −10 V
**RDS(on) Max**
**ID Max**
**V(BR)DSS**
−4.0 A
~~rs~~
~~ee~~
~~ee~~
~~oS~~||| |• This is a Pb−Free Device||**SCHOTTKY DIODE**||| |**Applications**||**VR Max**
**IF Max**
**VF Max**||| |**Applications**||||| |• Disk Drives||20 V
2.2 A
0.58 V||| |• DC−DC Converters||||| |• Printers||S
A||| |**MOSFET MAXIMUM RATINGS**(TJ= 25°C unless otherwise stated)||||| |**Rating**
**Symbol**
**Value**
**Unit**
Drain−to−Source Voltage
VDSS
−30
V
Gate−to−Source Voltage
VGS
±20
V
~~ee~~
~~ee~~
~~ee~~
~~es~~||G||| |Continuous Drain
Current R JA(Note 1)
Steady
TA= 25°C
ID
−3.3
A
TA= 70°C
−2.6
Power Dissipation
R JA(Note 1)
TA= 25°C
PD
1.6
W
Continuous Drain
Current R JA(Note 2)
TA= 25°C
ID
−2.3
A
TA= 70°C
−1.8
~~ee~~
~~ee~~
~~jo pf~~
~~|~~
~~|~~
~~ee ee~~||**MARKING DIAGRAM**
**& PIN ASSIGNMENT**
D
**P−Channel MOSFET**
C
**Schottky Diode**||| |State
Power Dissipation
R JA(Note 2)
TA= 25°C
PD
0.77
W
Continuous Drain
Current R JAt < 10 s
(Note 1)
TA= 25°C
ID
−4.0
A
TA= 70°C
−3.2
Power Dissipation
R JAt < 10 s (Note 1)
TA= 25°C
PD
2.31
W
Pulsed Drain Current
TA= 25°C,
tp= 10 s
IDM
−10
A
Operating Junction and Storage Temperature
TJ, TSTG
−55 to
+150
°C
Source Current (Body Diode)
IS
−1.3
A
Lead Temperature for Soldering Purposes
(1/8″from case for 10 s)
TL
260
°C
**SCHOTTKY MAXIMUM RATINGS**(TJ= 25°C unless otherwise stated)
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~~Po) Ee~~
~~ee ee ee~~
~~ee~~
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~~ee~~
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~~a~~
~~ee~~
~~ee ee~~||**ORDERING INFORMATION**
**SOIC−8**
**CASE 751**
**STYLE 18**
4184P
= Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
= Pb−Free Package
1
8
4184P
AYWW
1
8
A
A
S
G
C
C
D
D
;||| |Peak Repetitive Reverse Voltage
VRRM
20
V||**Device**
**Package**
**Shipping**†||| |||||| |DC Blocking Voltage
VR
20
V||NTMD4184PFR2G
SOIC−8
2500/Tape & Reel|2500/Tape & Reel|| |Average Rectified Forward
Steady
IF
2.2
A||(Pb−Free)||| |Current, (Note 1)
State||||| |t < 10 s
3.2||†For information on tape and reel specifications,
including part orientation and tape sizes, please||| - Independent Pin−Out for MOSFET and Schottky Allowing for Design Flexibility - Low RDS(on) MOSFET and Low VF Schottky to Minimize Conduction Losses - Optimized Gate Charge to Minimize Switching Losses - This is a Pb−Free Device ## **Applications** - Disk Drives - DC−DC Converters - Printers †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2008 **September, 2019 − Rev. 1** **NTMD4184PF/D** **NTMD4184PF** ## **THERMAL RESISTANCE MAXIMUM RATINGS** |**THERMAL RESISTANCE MAXIMUM RATINGS**|||| |---|---|---|---| |**Parameter MOSFET & Schottky**|**Symbol**|**Max**|**Unit**| |Junction−to−Ambient – Steady State (Note 1)|R�JA|79|°C/W| |Junction−to−Ambient – t≤10 s Steady State (Note 1)|R�JA|54|| |Junction−to−FOOT (Drain) Equivalent to R�JC|R�JF|50|| |Junction−to−Ambient – Steady State (Note 2)|R�JA|163|| 1. Surface−mounted on FR4 board using 1 inch sq pad size, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. ## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS **(TJ|= 25°C unless|otherwise noted)|otherwise noted)||||| |---|---|---|---|---|---|---|---| |**Characteristic**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||||| |Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID= 250�A||−30|||V| |Drain−to−Source Breakdown Voltage
Temperature Coefficient|V(BR)DSS/TJ||||30||mV/°C| |Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,
VDS= −24 V|TJ= 25°C|||−1.0|�A| ||||TJ= 125°C|||−10|| |Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS=±20 V||||±100|nA| |**ON CHARACTERISTICS**(Note 3)|||||||| |Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= 250�A||−1.0||−3.0|V| |Negative Threshold Temperature Coefficient|VGS(TH)/TJ||||4.4||mV/°C| |Drain−to−Source On Resistance|RDS(on)|VGS= −10 V|ID= −3.0 A||70|95|m�| |||VGS= −4.5 V|ID= −1.5 A||120|165|| |Forward Transconductance|gFS|VDS= −1.5 V, ID= −3.0 A|||5.0||S| |**CHARGES, CAPACITANCES AND GATE RESISTANCE**|||||||| |Input Capacitance|CISS|VGS= 0 V, f = 1.0 MHz,
VDS= −10 V|||280|360|pF| |Output Capacitance|COSS||||80|110|| |Reverse Transfer Capacitance|CRSS||||52|80|| |Total Gate Charge|QG(TOT)|VGS= −4.5 V, VDS= −10 V,
ID= −3.0 A|||2.8|4.2|nC| |Threshold Gate Charge|QG(TH)||||0.4||| |Gate−to−Source Charge|QGS||||1.1||| |Gate−to−Drain Charge|QGD||||1.1||| |Total Gate Charge|QG(TOT)|VGS= −10 V, VDS= −10 V,
ID= −3.0 A|||5.8|8.8|nC| |**SWITCHING CHARACTERISTICS**(Note 4)|||||||| |Turn−On Delay Time|td(ON)|VGS= −10 V, VDS= −10 V,
ID= −1.0 A, RG= 6.0�|||7.2|15|ns| |Rise Time|tr||||12|24|| |Turn−Off Delay Time|td(OFF)||||18|36|| |Fall Time|tf||||2.6|6.0|| |**DRAIN−TO−SOURCE CHARACTERISTICS**|||||||| |Forward Diode Voltage|VSD|VGS= 0 V
ID= −1.3 A|TJ= 25°C||−0.8|−1.0|V| ||||TJ= 125°C||0.7||ns| |Reverse Recovery Time|tRR|VGS= 0 V, dIS/dt= 100 A/�s,
IS= −1.3 A|||12.8||| |Charge Time|ta||||10||| |Discharge Time|tb||||2.8||| |Reverse Recovery Time|QRR||||7.4||nC| **www.onsemi.com** **2** **NTMD4184PF** ## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS **(TJ|= 25°C unless|otherwise noted)|otherwise noted)|otherwise noted)|otherwise noted)|otherwise noted)|otherwise noted)|||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |**Characteristic**|**Symbol**|**Test Condition**||||||**Min**|||**Typ**||**Max**||**Unit**|| |**SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS**(TJ= 25°C unless otherwise noted)||||||||||||||||| |**Parameter**|**Symbol**|**Test Conditions**||||||**Min**|||**Typ**||**Max**||**Unit**|| |Maximum Instantaneous
Forward Voltage|VF|IF= 1.0 A||TJ= 25°C|||||||0.43||0.50||V|| |||||TJ= 125°C|||||||0.35||0.39|||| |||IF= 2.0 A||TJ= 25°C|||||||0.5||0.58|||| |||||TJ= 125°C|||||||0.45||0.53|||| |Maximum Instantaneous
Reverse Current|IR|VR= 10 V||TJ= 25°C|||||||0.001||0.02||mA|| |||||TJ= 125°C|||||||1.2||14|||| |||VR= 20 V||TJ= 25°C|||||||0.004||0.05|||| |||||TJ= 125°C|||||||2.0||18|||| |3. Pulse Test: pulse width�300�s, duty cycle�2%.
4. Switching characteristics are independent of operating junction temperatures.
**TYPICAL CHARACTERISTICS**
**Figure 1. On−Region Characteristics**
**Figure 2. Transfer Characteristics**
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS, GATE−TO−SOURCE VOLTAGE (V)
10
8
6
4
2
0
0
2
4
6
8
10
6
5
4
3
2
1
0
0
2
4
6
8
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
10
8
6
4
2
0.05
0.10
0.15
0.20
0.25
0.30
9
8
7
6
5
4
3
2
0.05
0.10
0.15
0.20
0.25
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (�)
VGS= 4.5 V
10 V
TJ= 25°C
4.2 V
~~3.8 V~~
3.6 V
3.4 V
3.2 V
~~4.0 V~~
5.0 V
~~3.0 V~~
2.8 V
~~VDS ≥ 10 V~~
TJ= 25°C
TJ= 125°C
TJ= −55°C
ID = 3 A
TJ= 25°C
RDS(on), DRAIN−TO−SOURCE RESISTANCE (�)
VGS= 4.5 V
TJ= 25°C
VGS= 10 V
2.6 V||||||||||||||||| |||||||||||||||||| |||||||||||||||||| ||||||~~DS ~~|~~10~~||||||||||| |||||||||||||||||| |||||||||||||||||| |||||||||||||||||| |||||||||||||||||| |||||||||||||||||| |||||||||||||||||| |||||||||||||||||| ||||||||TJ|= 12|5°C||||TJ=|25°C||| |||||||||||||||||| ||||||||||||TJ|= −5|5°C|||| **==> picture [241 x 382] intentionally omitted <==** **----- Start of picture text -----**
10 5.0 V VGS = 4.5 V TJ = 25 ° C 4.2 V
10 V
8 4.0 V
3.8 V
6
3.6 V
3.4 V
4
3.2 V
2 3.0 V
2.8 V
2.6 V
0
0 2 4 6 8 10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
0.30
ID = 3 A
0.25 TJ = 25 ° C
0.20
0.15
0.10
0.05
2 4 6 8 10
VGS, GATE−TO−SOURCE VOLTAGE (V)
, DRAIN CURRENT (A)
ID
) �
, DRAIN−TO−SOURCE RESISTANCE (
DS(on)
R
**----- End of picture text -----**
**Figure 3. On−Resistance vs. Gate Voltage** **Figure 4. On−Resistance vs. Drain Current and Gate Voltage** **www.onsemi.com** **3** **NTMD4184PF** ## **TYPICAL CHARACTERISTICS** **==> picture [491 x 383] intentionally omitted <==** **----- Start of picture text -----**
1.6 10,000
1.5 ID = 3 A VGS = 0 V
1.4 VGS = 10 V
1.3
1000
1.2 TJ = 150 ° C
1.1
1.0
0.9 100 TJ = 125 ° C
0.8
0.7
0.6 10
−50 −25 0 25 50 75 100 125 150 0 5 10 15 20 25 30
TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current
Temperature vs. Voltage
400 10
TJ = 25 ° C QT
350
VGS
8
300 C iss
250
6
200
Q1 Q2
4
150
100
Coss 2 ID = 3 A
50 VGS = 0 V Crss TJ = 25 ° C
0 0
0 5 10 15 20 25 0 1 2 3 4 5 6
DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)
, LEAKAGE (nA)
, DRAIN−TO−SOURCE RE- IDSS
SISTANCE (NORMALIZED)
DS(on)
R
C, CAPACITANCE (pF)
, GATE−TO−SOURCE VOLTAGE (V)
GS
V
**----- End of picture text -----**
**Figure 7. Capacitance Variation** **==> picture [243 x 172] intentionally omitted <==** **----- Start of picture text -----**
100
VDD = 15 V
ID = 1.0 A
VGS = 10 V
tf
td(off)
10 tr
td(on)
1
1 10 100
RG, GATE RESISTANCE ( � )
t, TIME (ns)
**----- End of picture text -----**
**Figure 9. Resistive Switching Time Variation vs. Gate Resistance** **Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge** **==> picture [240 x 172] intentionally omitted <==** **----- Start of picture text -----**
3.0
2.5 VTJGS = 25 = 0 V ° C
2.0
1.5
1.0
0.5
0
0 0.2 0.4 0.6 0.8 1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
, SOURCE CURRENT (A)
IS
**----- End of picture text -----**
**Figure 10. Diode Forward Voltage vs. Current** **www.onsemi.com** **4** **NTMD4184PF** ## **TYPICAL CHARACTERISTICS** **==> picture [491 x 173] intentionally omitted <==** **----- Start of picture text -----**
1000
100 0.5
0.2
0.1
10 0.05
0.02
0.01
1
0.1
Single Pulse
0.01
0.0000001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
PULSE TIME (sec)
C/W)
°
R(t) (
**----- End of picture text -----**
**Figure 11. Thermal Response − R � JA at Steady State (min pad)** **==> picture [491 x 381] intentionally omitted <==** **----- Start of picture text -----**
100
0.5
0.2
10 0.1
0.05
0.02
1
0.01
0.1
Single Pulse
0.01
0.001
0.0000001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
PULSE TIME (sec)
Figure 12. Thermal Response − R � JA at Steady State (1 inch sq pad)
100 100
TJ = 125 ° C
10 10
TJ = 125 ° C
TJ = 85 ° C TJ = 85 ° C TJ = 25 ° C
TJ = 25 ° C
1 1
TJ = −55 ° C
0.1 0.1
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5
VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (V)
C/W)
°
R(t) (
, INSTANTANEOUS FORWARD CURRENT (A) , INSTANTANEOUS FORWARD CURRENT (A)
IF IF
**----- End of picture text -----**
**Figure 13. Typical Forward Voltage** **Figure 14. Maximum Forward Voltage** **www.onsemi.com** **5** **NTMD4184PF** ## **TYPICAL CHARACTERISTICS** **==> picture [490 x 173] intentionally omitted <==** **----- Start of picture text -----**
100E−3 100E−3
TJ = 125 ° C
10E−3 10E−3
1E−3 TJ = 125 ° C 1E−3 TJ = 85 ° C
TJ = 85 ° C
100E−6 100E−6
TJ = 25 ° C
10E−6 10E−6
TJ = 25 ° C
1E−6 1E−6
100E−9 100E−9
0 10 20 0 10 20
VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V)
, REVERSE CURRENT (A)
IR
, MAXIMUM REVERSE CURRENT (A)
IR
**----- End of picture text -----**
**Figure 15. Typical Reverse Current** **Figure 16. Maximum Reverse Current** **==> picture [241 x 173] intentionally omitted <==** **----- Start of picture text -----**
1000
TJ = 25 ° C
100
10
0 5 10 15 20 25
VR, REVERSE VOLTAGE (V)
C, CAPACITANCE (pF)
**----- End of picture text -----**
**Figure 17. Capacitance** FETKY is a registered trademark of International Rectifier Corporation. **www.onsemi.com** **6** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [42 x 32] intentionally omitted <==** **----- Start of picture text -----**
8
1
SCALE 1:1
**----- End of picture text -----**
**SOIC−8 NB** CASE 751−07 ISSUE AK DATE 16 FEB 2011 **==> picture [468 x 427] intentionally omitted <==** **----- Start of picture text -----**
NOTES:
−X− 1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
A 2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
8 5 PER SIDE.
py 5. DIMENSION D DOES NOT INCLUDE DAMBAR
B S 0.25 (0.010) M Y M PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
1 IN EXCESS OF THE D DIMENSION AT
4 MAXIMUM MATERIAL CONDITION.
−Y− K 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
Th STANDARD IS 751−07.
G MILLIMETERS INCHES
DIM MIN MAX MIN MAX
A 4.80 5.00 0.189 0.197
C N X 45 B 3.80 4.00 0.150 0.157
| a SEATING “ C 1.35 1.75 0.053 0.069
PLANE D 0.33 0.51 0.013 0.020
−Z− G 1.27 BSC 0.050 BSC
H 0.10 0.25 0.004 0.010
0.10 (0.004) J 0.19 0.25 0.007 0.010
H D M J K 0.40 1.27 0.016 0.050
M 0 8 0 8
N 0.25 0.50 0.010 0.020
0.25 (0.010) M Z Y S X S S 5.80 6.20 0.228 0.244
GENERIC
MARKING DIAGRAM*
SOLDERING FOOTPRINT*
8 8 8 8
XXXXX XXXXX XXXXXX XXXXXX
1.52 ALYWX ALYWX AYWW AYWW
0.060
1 1 1 1
IC IC Discrete Discrete
r oogO: bd (Pb−Free) bed be (Pb−Free)
7.0 4.0
XXXXX = Specific Device Code XXXXXX = Specific Device Code
0.275 0.155
A = Assembly Location A = Assembly Location
L = Wafer Lot Y = Year
yt Y = Year WW = Work Week
W = Work Week = Pb−Free Package
= Pb−Free Package
0.6 1.270 *This information is generic. Please refer to
0.024 oon 0.050 device data sheet for actual part marking. |
Pb−Free indicator, “G” or microdot “ ”, may
mm or may not be present. Some products may
SCALE 6:1
inches not follow the Generic Marking.
**----- End of picture text -----**
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. **STYLES ON PAGE 2** Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB42564B** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DESCRIPTION: SOIC−8 NB PAGE 1 OF 2** ~~a~~ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 **SOIC−8 NB** CASE 751−07 ISSUE AK ## DATE 16 FEB 2011 |STYLE 1:|STYLE 1:|STYLE 2:||STYLE 3:|STYLE 3:||STYLE 4:|STYLE 4:| |---|---|---|---|---|---|---|---|---| |PIN 1.|EMITTER|PIN 1.|COLLECTOR, DIE, #1|PIN 1.||DRAIN, DIE #1|PIN 1.|ANODE| |2.|COLLECTOR|2.|COLLECTOR, #1|2.||DRAIN, #1|2.|ANODE| |3.|COLLECTOR|3.|COLLECTOR, #2|3.||DRAIN, #2|3.|ANODE| |4.|EMITTER|4.|COLLECTOR, #2|4.||DRAIN, #2|4.|ANODE| |5.|EMITTER|5.|BASE, #2|5.||GATE, #2|5.|ANODE| |6.|BASE|6.|EMITTER, #2|6.||SOURCE, #2|6.|ANODE| |7.|BASE|7.|BASE, #1|7.||GATE, #1|7.|ANODE| |8.|EMITTER|8.|EMITTER, #1|8.||SOURCE, #1|8.|COMMON CATHODE| |STYLE 5:||STYLE 6:||STYLE 7:|||STYLE 8:|| |PIN 1.|DRAIN|PIN 1.|SOURCE|PIN 1.||INPUT|PIN 1.|COLLECTOR, DIE #1| |2.|DRAIN|2.|DRAIN|2.||EXTERNAL BYPASS|2.|BASE, #1| |3.|DRAIN|3.|DRAIN|3.||THIRD STAGE SOURCE|3.|BASE, #2| |4.|DRAIN|4.|SOURCE|4.||GROUND|4.|COLLECTOR, #2| |5.|GATE|5.|SOURCE|5.||DRAIN|5.|COLLECTOR, #2| |6.|GATE|6.|GATE|6.||GATE 3|6.|EMITTER, #2| |7.|SOURCE|7.|GATE|7.||SECOND STAGE Vd|7.|EMITTER, #1| |8.|SOURCE|8.|SOURCE|8.||FIRST STAGE Vd|8.|COLLECTOR, #1| |STYLE 9:||STYLE 10:||STYLE 11:|||STYLE 12:|| |PIN 1.|EMITTER, COMMON|PIN 1.|GROUND|PIN 1.||SOURCE 1|PIN 1.|SOURCE| |2.|COLLECTOR, DIE #1|2.|BIAS 1|2.||GATE 1|2.|SOURCE| |3.|COLLECTOR, DIE #2|3.|OUTPUT|3.||SOURCE 2|3.|SOURCE| |4.|EMITTER, COMMON|4.|GROUND|4.||GATE 2|4.|GATE| |5.|EMITTER, COMMON|5.|GROUND|5.||DRAIN 2|5.|DRAIN| |6.|BASE, DIE #2|6.|BIAS 2|6.||DRAIN 2|6.|DRAIN| |7.|BASE, DIE #1|7.|INPUT|7.||DRAIN 1|7.|DRAIN| |8.|EMITTER, COMMON|8.|GROUND|8.||DRAIN 1|8.|DRAIN| |STYLE 13:||STYLE 14:||STYLE 15:|||STYLE 16:|| |PIN 1.|N.C.|PIN 1.|N−SOURCE|PIN 1.|ANODE 1||PIN 1.|EMITTER, DIE #1| |2.|SOURCE|2.|N−GATE|2.|ANODE 1||2.|BASE, DIE #1| |3.|SOURCE|3.|P−SOURCE|3.|ANODE 1||3.|EMITTER, DIE #2| |4.|GATE|4.|P−GATE|4.|ANODE 1||4.|BASE, DIE #2| |5.|DRAIN|5.|P−DRAIN|5.|CATHODE, COMMON||5.|COLLECTOR, DIE #2| |6.|DRAIN|6.|P−DRAIN|6.|CATHODE, COMMON||6.|COLLECTOR, DIE #2| |7.|DRAIN|7.|N−DRAIN|7.|CATHODE, COMMON||7.|COLLECTOR, DIE #1| |8.|DRAIN|8.|N−DRAIN|8.|CATHODE, COMMON||8.|COLLECTOR, DIE #1| |STYLE 17:||STYLE 18:||STYLE 19:|||STYLE 20:|| |PIN 1.|VCC|PIN 1.|ANODE|PIN 1.||SOURCE 1|PIN 1.|SOURCE (N)| |2.|V2OUT|2.|ANODE|2.||GATE 1|2.|GATE (N)| |3.|V1OUT|3.|SOURCE|3.||SOURCE 2|3.|SOURCE (P)| |4.|TXE|4.|GATE|4.||GATE 2|4.|GATE (P)| |5.|RXE|5.|DRAIN|5.||DRAIN 2|5.|DRAIN| |6.|VEE|6.|DRAIN|6.||MIRROR 2|6.|DRAIN| |7.|GND|7.|CATHODE|7.||DRAIN 1|7.|DRAIN| |8.|ACC|8.|CATHODE|8.||MIRROR 1|8.|DRAIN| |STYLE 21:||STYLE 22:||STYLE 23:|||STYLE 24:|| |PIN 1.|CATHODE 1|PIN 1.|I/O LINE 1|PIN 1.||LINE 1 IN|PIN 1.|BASE| |2.|CATHODE 2|2.|COMMON CATHODE/VCC|2.||COMMON ANODE/GND|2.|EMITTER| |3.|CATHODE 3|3.|COMMON CATHODE/VCC|3.||COMMON ANODE/GND|3.|COLLECTOR/ANODE| |4.|CATHODE 4|4.|I/O LINE 3|4.||LINE 2 IN|4.|COLLECTOR/ANODE| |5.|CATHODE 5|5.|COMMON ANODE/GND|5.||LINE 2 OUT|5.|CATHODE| |6.|COMMON ANODE|6.|I/O LINE 4|6.||COMMON ANODE/GND|6.|CATHODE| |7.|COMMON ANODE|7.|I/O LINE 5|7.||COMMON ANODE/GND|7.|COLLECTOR/ANODE| |8.|CATHODE 6|8.|COMMON ANODE/GND|8.||LINE 1 OUT|8.|COLLECTOR/ANODE| |STYLE 25:||STYLE 26:||STYLE 27:|STYLE 27:||STYLE 28:|| |PIN 1.|VIN|PIN 1.|GND|PIN 1.||ILIMIT|PIN 1.|SW_TO_GND| |2.|N/C|2.|dv/dt|2.||OVLO|2.|DASIC_OFF| |3.|REXT|3.|ENABLE|3.||UVLO|3.|DASIC_SW_DET| |4.|GND|4.|ILIMIT|4.||INPUT+|4.|GND| |5.|IOUT|5.|SOURCE|5.||SOURCE|5.|V_MON| |6.|IOUT|6.|SOURCE|6.||SOURCE|6.|VBULK| |7.|IOUT|7.|SOURCE|7.||SOURCE|7.|VBULK| |8.|IOUT|8.|VCC|8.||DRAIN|8.|VIN| |STYLE 29:||STYLE 30:||||||| |PIN 1.|BASE, DIE #1|PIN 1.|DRAIN 1|||||| |2.|EMITTER, #1|2.|DRAIN 1|||||| |3.|BASE, #2|3.|GATE 2|||||| |4.|EMITTER, #2|4.|SOURCE 2|||||| |5.|COLLECTOR, #2|5.|SOURCE 1/DRAIN 2|||||| |6.|COLLECTOR, #2|6.|SOURCE 1/DRAIN 2|||||| |7.|COLLECTOR, #1|7.|SOURCE 1/DRAIN 2|||||| |8.|COLLECTOR, #1|8.|GATE 1|||||| Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB42564B** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DESCRIPTION: SOIC−8 NB PAGE 2 OF 2** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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