# Power MOSFET, P Channel, 20 V, 8.2 A, 0.0146 ohm, UDFN, Surface Mount ![Product image](https://novapart.co/image/farnell:3616373/) **URL**: https://novapart.co/products/NTLUS3A18PZTCG/power-mosfet-p-channel-20-v-82-a-00146-ohm-udfn **SKU**: NTLUS3A18PZTCG **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.1500 **Stock**: 10+ ## Specifications | Parameter | Value | |---|---| | Svhc | No SVHC (15-Jan-2018) | | No. Of Pins | 6Pins | | Channel Type | P Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 1.7W | | Transistor Mounting | Surface Mount | | Rds(On) Test Voltage | 4.5V | | Transistor Case Style | UDFN | | Drain Source Voltage Vds | 20V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 8.2A | | Drain Source On State Resistance | 0.0146ohm | | Gate Source Threshold Voltage Max | 1V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3616373/) ## NTLUS3A18PZ ## MOSFET – Power, Single, P-Channel, UDFN, 2.0x2.0x0.55 mm ## -20 V, -8.2 A ## **Features** - UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction - Low Profile UDFN 2.0x2.0x0.55 mm for Board Space Saving - Ultra Low RDS(on) - ESD Diode−Protected Gate - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ## **Applications** - Optimized for Power Management Applications for Portable Products, such as Cell Phones, Media Tablets, PMP, DSC, GPS, and Others - Battery Switch - High Side Load Switch ## **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise stated) **Parameter Symbol Value Unit** ~~nn~~ Drain-to-Source Voltage VDSS −20 V ~~| aeGe bhICOeweCN~~ Gate-to-Source Voltage VGS ± 8.0 V ~~eeAO Pak aw~~ Continuous Drain Steady TA = 25 ° C ID −8.2 A Current (Note 1)Continuous Drain AD State ~~DO’wy~~ TA = 85 ~~WN~~ ° C ~~pA~~ −5.9 Current (Note 1) t ≤ 5 s TA = 25 ° C −12.2 Power DissipaSteady TA = 25 ° C PD 1.7 W tion (Note 1) State ~~Pt~~ t ≤ 5 s TA = 25 ° C 3.8 Continuous Drain Steady TA = 25 ° C ID −5.1 A Current (Note 2) State TA = 85 ° C −3.7 ~~eSP| ee~~ ~~**|** ee~~ Power Dissipation (Note 2) TA = 25 ° C PD 0.7 W ~~eeGs es Gs~~ Pulsed Drain Current tp = 10 s IDM −25 A ~~eeGe ee ee es~~ Operating Junction and Storage TJ, -55 to ° C Temperature TSTG 150 ESD (HBM, JESD22−A114) VESD 2000 V ~~es es Gs~~ Source Current (Body Diode) (Note 2) IS −1.7 A Lead Temperature for Soldering Purposes TL 260 ° C (1/8 ″ from case for 10 s) ~~eS~~ Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 2. Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm[2] , 2 oz. Cu. ## **www.onsemi.com** ## **MOSFET** **==> picture [165 x 213] intentionally omitted <==** **----- Start of picture text -----**
V(BR)DSS RDS(on) MAX ID MAX
18 m @ −4.5 V
25 m @ −2.5 V
−20 V −8.2 A
50 m @ −1.8 V
90 m @ −1.5 V
D
G
S
**----- End of picture text -----**
## **P−Channel MOSFET** **==> picture [182 x 101] intentionally omitted <==** **----- Start of picture text -----**
S MARKING DIAGRAM
D
1
UDFN6 AC M
CASE 517BG
Pin 1 SG
AC= Specific Device Code
M = Date Code
= Pb−Free Package
(Note: Microdot may be in either location) :
**----- End of picture text -----**
## **PIN CONNECTIONS** (Top View) ## **ORDERING INFORMATION** See detailed ordering and shipping information on page 5 of this data sheet. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2016 **May, 2024 − Rev. 5** **NTLUS3A18PZ/D** **NTLUS3A18PZ** ## **THERMAL RESISTANCE RATINGS** |**THERMAL RESISTANCE RATINGS**|||| |---|---|---|---| |**Parameter**|**Symbol**|**Max**|**Unit**| |Junction-to-Ambient – Steady State (Note 3)|RθJA|72|°C/W| |Junction-to-Ambient – t≤5 s (Note 3)|RθJA|33|| |Junction-to-Ambient – Steady State min Pad (Note 4)|RθJA|189|| 3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 4. Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm[2] , 2 oz. Cu. ## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) |**Parameter**|**Symbol**|**Test Condition**|**Test Condition**|**Min**|**Typ**|**Max**|**Units**| |---|---|---|---|---|---|---|---| |**OFF CHARACTERISTICS**|||||||| |Drain-to-Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID= −250�A||−20|||V| |Drain-to-Source Breakdown Voltage
Temperature Coefficient|V(BR)DSS/TJ|ID= −250�A, ref to 25°C|||+10||mV/°C| |Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,
VDS= −20 V|TJ= 25°C|||−1.0|�A| |Gate-to-Source Leakage Current|IGSS|VDS= 0 V, VGS=±5.0 V||||±5|�A| |**ON CHARACTERISTICS**(Note 5)|||||||| |Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= −250�A||−0.4||−1.0|V| |Negative Threshold Temp. Coefficient|VGS(TH)/TJ||||3.0||mV/°C| |Drain-to-Source On Resistance|RDS(on)|VGS= −4.5 V, ID= −7.0 A|||14.6|18|m�| |||VGS= −2.5 V, ID= −5.0 A|||19|25|| |||VGS= −1.8 V, ID= −3.0 A|||25|50|| |||VGS= −1.5 V, ID= −1.0 A|||40|90|| |Forward Transconductance|gFS|VDS= −5 V, ID= −3.0 A|||40||S| |**CHARGES, CAPACITANCES & GATE RESISTANCE**|||||||| |Input Capacitance|CISS|VGS= 0 V, f = 1 MHz,
VDS= −15 V|||2240||pF| |Output Capacitance|COSS||||240||| |Reverse Transfer Capacitance|CRSS||||210||| |Total Gate Charge|QG(TOT)|VGS= −4.5 V, VDS= −15 V;
ID= −4.0 A|||28||nC| |Threshold Gate Charge|QG(TH)||||1.0||| |Gate-to-Source Charge|QGS||||2.9||| |Gate-to-Drain Charge|QGD||||8.8||| |**SWITCHING CHARACTERISTICS, VGS = 4.5 V**(Note 6)|||||||| |Turn-On Delay Time|td(ON)|VGS= −4.5 V, VDD= −15 V,
ID= −4.0 A, RG= 1�|||8.6||ns| |Rise Time|tr||||15||| |Turn-Off Delay Time|td(OFF)||||150||| |Fall Time|tf||||88||| |**DRAIN-SOURCE DIODE CHARACTERISTICS**|||||||| |Forward Diode Voltage|VSD|VGS= 0 V,
IS= −1.0 A|TJ= 25°C||0.63|1.0|V| ||||TJ= 125°C||0.50||| |Reverse Recovery Time|tRR|VGS= 0 V, dIs/dt = 100 A/�s,
IS= −1.0 A|||26.1||ns| |Charge Time|ta||||10.2||| |Discharge Time|tb||||15.9||| |Reverse Recovery Charge|QRR||||12||nC| 5. Pulse Test: pulse width ≤ 300 � s, duty cycle ≤ 2%. 6. Switching characteristics are independent of operating junction temperatures. **www.onsemi.com** **2** **NTLUS3A18PZ** ## **TYPICAL CHARACTERISTICS** **==> picture [492 x 621] intentionally omitted <==** **----- Start of picture text -----**
20 20
18 18 VDS ≤ −10 V
−4.5 to −2.5 V
16 16
14 14
−2.0 V
12 12
10 VGS = −1.8 V −1.5 V 10 T J = 25 ° C
8 8
6 6
4 4
TJ = 125 ° C
2 2 T J = −55 ° C
0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 0.5 1 1.5 2 2.5
−VDS, DRAIN−TO−SOURCE VOLTAGE (V) −VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
0.10 0.060
0.09 TJ = 25 ° C TJ = 25 ° C
ID = −4.0 A 0.050
0.08
0.07
0.040
0.06 VGS = −1.8 V
0.05 0.030
0.04 VGS = −2.5 V
0.020
0.03
0.02
0.010 VGS = −4.5 V
0.01
0.00 0.000
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 1 3 5 7 9 11 13 15 17 19
−VGS, GATE VOLTAGE (V) −ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and
Voltage Gate Voltage
1.6 100000
1.5 VGS = −4.5 V
ID = −4.0 A
1.4 TJ = 125 ° C
1.3 10000
1.2
1.1 TJ = 85 ° C
1.0 1000
0.9
0.8
0.7 100
50 25 0 25 50 75 100 125 150 2 4 6 8 10 12 14 16 18 20
TJ, JUNCTION TEMPERATURE ( ° C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current
Temperature vs. Voltage
, DRAIN CURRENT (A) , DRAIN CURRENT (A)
D D
−I −I
) � ) �
, DRAIN−TO−SOURCE RESISTANCE ( , DRAIN−TO−SOURCE RESISTANCE (
DS(on) DS(on)
R R
) �
, LEAKAGE (nA)
DSS
, NORMALIZED DRAIN−TO− −I
SOURCE RESISTANCE (
DS(on)
R
**----- End of picture text -----**
**www.onsemi.com** **3** **NTLUS3A18PZ** ## **TYPICAL CHARACTERISTICS** **==> picture [492 x 594] intentionally omitted <==** **----- Start of picture text -----**
4000 5 18
36003200 V TJ GS = 25 = 0 V ° C 4 Q T 16
f = 1 MHz 14
2800 Ciss VDS VGS 12
2400 3
10
2000
8
1600 2 QGS QGD
6
1200
800400 Crss C oss 1 T V IDJ DS = −4.0 A = 25 = −15 V ° C 42
0 0 0
0 2 4 6 8 10 12 14 16 18 20 0 5 10 15 20 25 30
−VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000.0 10.0
td(off)
100.0
tf
TJ = 125 ° C
1.0
tr
10.0 TJ = 25 ° C
td(on)
VVGSDD = −4.5 V = −15 V TJ = −55 ° C
ID = −4.0 A
1.0 0.1
1 10 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
RG, GATE RESISTANCE ( � ) −VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current
vs. Gate Resistance
0.95 225
0.85 ID = −250 � A 200
175
0.75
150
0.65
125
0.55
100
0.45
75
0.35
50
0.25 25
0.15 0
50 25 0 25 50 75 100 125 150 10 � 1m 100m 10 1000
TJ, JUNCTION TEMPERATURE ( ° C) SINGLE PULSE TIME (s)
−V
DS
C, CAPACITANCE (pF)
, GATE−TO−SOURCE VOLTAGE (V)
GS
−V , DRAIN−TO−SOURCE VOLTAGE (V)
t, TIME (ns)
, SOURCE CURRENT (A)
S
−I
(V)
GS(th)
−V POWER (W)
**----- End of picture text -----**
**Figure 11. Threshold Voltage** **Figure 12. Single Pulse Maximum Power Dissipation** **www.onsemi.com** **4** **NTLUS3A18PZ** ## **TYPICAL CHARACTERISTICS** **==> picture [491 x 426] intentionally omitted <==** **----- Start of picture text -----**
100
10 � s
10
100 � s
1 ms
1
10 ms
VGS = −8 V
Single Pulse
0.1 TC = 25 ° C dc
RDS(on) Limit
Thermal Limit
Package Limit
0.01
0.1 1 10 100
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 13. Maximum Rated Forward Biased
Safe Operating Area
80
70 R � JA = 72 ° C/W
60
50
40 Duty Cycle = 0.5
30
20 0.05 0.02 0.01
0.2
10 0.1
Single Pulse
0
1E−06 1E−05 1E−04 1E−03 1E−02 1E−01 1E+00 1E+01 1E+02 1E+03
t, TIME (s)
Figure 14. FET Thermal Response
, DRAIN CURRENT (A)
D
−I
R(t), EFFECTIVE TRANSIENT THERMAL RESPONSE
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## **DEVICE ORDERING INFORMATION** |**DEVICE ORDERING INFORMATION**||| |---|---|---| |**Device**|**Package**|**Shipping**†| |NTLUS3A18PZTAG|UDFN6
(Pb−Free)|3000 / Tape & Reel| |NTLUS3A18PZTBG|UDFN6
(Pb−Free)|3000 / Tape & Reel| |NTLUS3A18PZTCG|UDFN6
(Pb−Free)|3000 / Tape & Reel| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. **www.onsemi.com** **5** # MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [477 x 396] intentionally omitted <==** **----- Start of picture text -----**
UDFN6 2x2, 0.65P
CASE 517BG
ISSUE A
DATE 04 FEB 2010
SCALE 4:1
D A B NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
EXPOSED Cu MOLD CMPD 2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS
ÉÉÇÇ ÇÇÇÉÉÉ MEASURED BETWEEN 0.15 AND 0.30 mm FROM TERMINAL.
4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS
THE TERMINALS.
PIN ONE PLATING ÇÇ ÉÉÉ 1. CENTER TERMINAL LEAD IS OPTIONAL. CENTER TERMINAL
REFERENCE E DETAIL B IS CONNECTED TO TERMINAL LEAD # 4.
ÍÍ OPTIONAL 2. LEADS 1, 2, 5 AND 6 ARE TIED TO THE FLAG.
CONSTRUCTIONS MILLIMETERS
0.10 C ÍÍ DIM MIN MAX
A 0.45 0.55
ÍÍ A1 0.00 0.05
0.10 C TOP VIEW L L A3 0.13 REF
b 0.25 0.35
b1 0.51 0.61
DETAIL B A L1 D 2.00 BSC
A3 D2 1.00 1.20
0.10 C
DETAIL A E 2.00 BSC
OPTIONAL E2 1.10 1.30
CONSTRUCTIONS e 0.65 BSC
0.08 C K 0.15 REF
A1 J 0.27 BSC
NOTE 4 SIDE VIEW C SEATINGPLANE J1L 0.200.65 BSC0.30
L1 --- 0.10
L2 0.20 0.30
DETAIL A D2 GENERIC
e MARKING DIAGRAM*
6X L 1 3 L2 1
XXM �
b1
�
0.10 C A B
E2 0.05 C NOTE 5 XX = Specific Device Code
M = Date Code
(Note: Microdot may be in either location)
K 6 4 6X b *This information is generic. Please refer to
device data sheet for actual part marking.
J 0.10 C A B Pb−Free indicator, “G” or microdot “ � ”, may
J1 0.05 C NOTE 3 or may not be present. Some products may
not follow the Generic Marking.
BOTTOM VIEW
**----- End of picture text -----**
## DATE 04 FEB 2010 **==> picture [256 x 202] intentionally omitted <==** **----- Start of picture text -----**
RECOMMENDED
MOUNTING FOOTPRINT
2.30
1.10
6X 6X
0.43 0.35
1
1.25 0.60
0.35
0.34
PACKAGE
OUTLINE 0.66
0.65
PITCH
DIMENSIONS: MILLIMETERS
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
**----- End of picture text -----**
**==> picture [492 x 37] intentionally omitted <==** **----- Start of picture text -----**
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98AON48158E Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DESCRIPTION: UDFN6 2x2, 0.65P PAGE 1 OF 1
**----- End of picture text -----**
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