# Power MOSFET, FETKY, P Channel, 20 V, 3.3 A, 0.075 ohm, WDFN, Surface Mount

![Product image](https://novapart.co/image/farnell:3368850/)

**URL**: https://novapart.co/products/NTLJF3117PT1G/power-mosfet-fetky-p-channel-20-v-33-a-0075-ohm
**SKU**: NTLJF3117PT1G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1510
**Stock**: 1000+
**Lead Time**: 92 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.5W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | WDFN |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 3.3A |
| Drain Source On State Resistance | 0.075ohm |
| Gate Source Threshold Voltage Max | 700mV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3368850/)

**Share Feedback DATA SHEET** Your Opinion Matters **www.onsemi.com** ~~oe~~ 

## MOSFET ~~a~~ – Power, P‐Channel, Schottky Diode, Cool 2x2 mm ! 

## -20 V, -4.1 A, 2.0 A NTLJF3117P 

## **Features** 

## **MOSFET** 

**==> picture [192 x 110] intentionally omitted <==**

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V(BR)DSS RDS(on) MAX ID MAX  (Note 1)<br>100 m  @ −4.5 V<br>−20 V 135 m  @ −2.5 V −4.1 A<br>200 m  @ −1.8 V<br>==<br>SCHOTTKY DIODE<br>VR MAX VF TYP IF MAX<br>30 V 0.47 V 2.0 A<br>-—}-——_+ +<br>**----- End of picture text -----**<br>


- FETKY Configuration with MOSFET plus Low Vf Schottky Diode 

- COOL Package Provides Exposed Drain Pad for Excellent 

- Thermal Conduction 

- 2x2 mm Footprint Same as SC-88 Package Design 

- Independent Pinout Provides Circuit Design Flexibility 

- Low Profile (< 0.8 mm) for Easy Fit in Thin Environment 

- High Current Schottky Diode: 2 A Current Rating 

- This is a Pb-Free Device 

**==> picture [174 x 90] intentionally omitted <==**

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D A<br>G<br>S K<br>P−CHANNEL MOSFET SCHOTTKY DIODE<br>**----- End of picture text -----**<br>


## **Applications** 

- Optimized for Portable Applications like Cell Phones, Digital Cameras, Media Players, etc. 

- DC-DC Buck Circuit 

**==> picture [40 x 36] intentionally omitted <==**

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ES<br>1<br>**----- End of picture text -----**<br>


- Li-Ion Battery Applications 

- Color Display and Camera Flash Regulators 

**WDFN6 CASE 506AN** 

**MAXIMUM RATINGS** (TJ = 25 C unless otherwise noted) 

## **MARKING DIAGRAM** 

**==> picture [493 x 269] intentionally omitted <==**

**----- Start of picture text -----**<br>
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|
|a|Parameter|Symbol|Value|Unit|MARKING DIAGRAM|
|Drain-to-Source Voltage|VDSS|−20|V|1|6|
|Gate-to-Source Voltage|VGS|8.0|V|2|JHM|5|
|s|Continuous Drain|f|Steady|TA = 25 C|ID|−3.3|A|3|=|4|
|Current (Note 1)|State|TA = 85 C|−2.4|
|—eS|t|s|TA = 25 C|−4.1|JHM|= Specific Device Code= Date Code|
|Power Dissipation|Steady|PD|1.5|W|= Pb-Free Package|
|(Note 1)|State|TA = 25 C|(Note: Microdot may be in either location)|
|t|s|2.3|
|eS|Continuous Drain|TA = 25 C|2|ID|−2.3|A|eee|PIN CONNECTIONS|
|Current (Note 2)|Steady|TA = 85 C|−1.6|
|State|K|
|Power Dissipation(Note 2)|TA = 25 C|PD|0.71|W|A|1|6|K|
|Pulsed Drain CurrentOperating Junction and Storage Temperaturetp|= 10 s|TJ, TIDMSTG|−55 to−20|AC|N/C|2|5|G|
|150|D|
|ee|
|Source Current (Body Diode) (Note 2)|IS|−1.9|A|D|3|4|S|
|Lead Temperature for Soldering Purposes|TL|260|C|
|oT|(1/8 from case for 10 s)|=|
|(Top View)|
|Stresses exceeding those listed in the Maximum Ratings table may damage the|
|device. If any of these limits are exceeded, device functionality should not be|
|assumed, damage may occur and reliability may be affected.|ORDERING INFORMATION|

**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 

See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet. 

2. Surface Mounted on FR4 Board using the minimum recommended pad size of 30 mm[2] , 2 oz Cu. 

Publication Order Number: 

**1** 

 Semiconductor Components Industries, LLC, 2006 **February, 2026 − Rev. 4** 

**NTLJF3117P/D** 

**NTLJF3117P** 

## **SCHOTTKY DIODE MAXIMUM RATINGS** (TJ = 25 C unless otherwise noted) 

|**SCHOTTKY DIODE MAXIMUM RATINGS**(TJ = 25 C unless otherwise noted)J = 25 C unless otherwise noted)= 25 C unless otherwise noted)C unless otherwise noted)C unless otherwise noted)||||
|---|---|---|---|
|**Parameter**|**Symbol**|**Value**|**Unit**|
|Peak Repetitive Reverse Voltage|VRRM|30|V|
|DC Blocking Voltage|VR|30|V|
|Average Rectified Forward Current|IF|2.0|A|



**Parameter Symbol Max Unit** ~~DO~~ Junction-to-Ambient-Steady State (Note 3) R JA 83 ~~a~~ Junction-to-Ambient-t  5 s (Note 3) R JA 54 C/W ~~a pe~~ Junction-to-Ambient-Steady State Min Pad (Note 4) R JA 177 3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 4. Surface Mounted on FR4 Board using the minimum recommended pad size of 30 mm[2] , 2 oz Cu. **MOSFET ELECTRICAL CHARACTERISTICS** (TJ = 25 C unless otherwise noted) 

|**Parameter**<br>**Symbol**<br>**Test Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**<br>**OFF CHARACTERISTICS**<br>~~a~~<br>~~a~~<br>~~GG~~|
|---|
|Drain-to-Source Breakdown Voltage<br>V(BR)DSS<br>VGS= 0 V, ID= −250 A<br>−20<br>V<br>Drain-to-Source Breakdown Voltage<br>Temperature Coefficient<br>V(BR)DSS/TJ<br>ID= −250 A, Ref to 25C<br>9.95<br>mV/C<br>~~eG GG~~<br>~~a ee~~|
|Zero Gate Voltage Drain Current<br>IDSS<br>VDS= −16 V, VGS= 0 V<br>TJ= 25C<br>−1.0<br>A<br>TJ= 85C<br>−10<br>Gate-to-Source Leakage Current<br>IGSS<br>VDS= 0 V, VGS=8.0 V<br>100<br>nA<br>**ON CHARACTERISTICS**(Note 5)<br>~~es~~<br>~~a~~<br>~~ee ee~~<br>~~a~~<br>~~Ge GG~~|
|Gate Threshold Voltage<br>VGS(TH)<br>VGS= VDS, ID= −250 A<br>−0.4<br>−0.7<br>−1.0<br>V<br>Negative Threshold<br>Temperature Coefficient<br>VGS(TH)/TJ<br>2.44<br>mV/C<br>Drain-to-Source On-Resistance<br>RDS(on)<br>VGS= −4.5, ID= −2.0 A<br>75<br>100<br>m<br>VGS= −2.5, ID= −2.0 A<br>101<br>135<br>~~OO~~<br>~~ee~~<br>~~ee~~<br>~~po~~|
|VGS= −1.8, ID= −1.6 A<br>150<br>200<br>~~po~~|
|Forward Transconductance<br>gFS<br>VDS= −5.0 V, ID= −2.0 A<br>3.1<br>S<br>~~pf~~|
|**CHARGES, CAPACITANCES AND GATE RESISTANCE**|
|Input Capacitance<br>CISS<br>VGS= 0 V, f = 1.0 MHz,<br>VDS= −10 V<br>531<br>pF<br>Output Capacitance<br>COSS<br>91<br>Reverse Transfer Capacitance<br>CRSS<br>56<br>Total Gate Charge<br>QG(TOT)<br>VGS= −4.5 V, VDS= −10 V,<br>ID= −2.0 A<br>5.5<br>6.2<br>nC<br>Threshold Gate Charge<br>QG(TH)<br>0.7<br>Gate-to-Source Charge<br>QGS<br>1.0<br>Gate-to-Drain Charge<br>QGD<br>1.4<br>Gate Resistance<br>RG<br>8.8<br>**SWITCHING CHARACTERISTICS**(Note 6)<br>~~po~~<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~a a~~<br>~~ee~~<br>~~ee~~<br>~~a a~~<br>~~ee~~<br>~~ee~~<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~a~~<br>~~po~~<br>~~a ee~~|
|Turn-On Delay Time<br>td(ON)<br>VGS= −4.5 V, VDD= −5.0 V,<br>ID= −1.0 A, RG= 6.0<br>5.2<br>ns<br>Rise Time<br>tr<br>13.2<br>Turn-Off Delay Time<br>td(OFF)<br>13.7<br>Fall Time<br>tf<br>19.1<br>5. Pulse Test: Pulse Width<br>300 s, Duty Cycle<br>2%.<br>~~po~~<br>~~a~~<br>~~ee~~<br>~~ee~~<br>> ~~Ff~~<br>~~|~~<br>~~ee~~<br>~~ee~~<br>~~a~~<br>~~po~~<br>~~a~~<br><<br>u<br><|



6. Switching characteristics are independent of operating junction temperatures. 

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## **NTLJF3117P** 

## **MOSFET ELECTRICAL CHARACTERISTICS** (TJ = 25 C unless otherwise noted) 

|**MOSFET ELECTRICAL CHARACTERISTICS **(TJ = 25 C unless otherwise noted)|(TJ = 25 C unless otherwise noted)J = 25 C unless otherwise noted)= 25 C unless otherwise noted)C unless otherwise noted)C unless otherwise noted)|||
|---|---|---|---|
|**Parameter**<br>**Symbol**<br>**SWITCHING CHARACTERISTICS**(Note 6)<br>~~a~~|**Test Conditions**|**Max**<br>**Typ**<br>**Min**|**Unit**|
|Turn-On Delay Time<br>td(ON)<br>Rise Time<br>tr<br>Turn-Off Delay Time<br>td(OFF)<br>Fall Time<br>tf<br>~~a~~<br>~~a~~<br>~~ee~~|VGS= −4.5 V, VDD= −10 V,<br>ID= −2.0 A, RG= 2.0<br>~~a~~|5.5<br>15<br>19.8<br>21.6<br>~~ee~~<br>~~ee~~<br>~~a~~|ns|
|**DRAIN-SOURCE DIODE CHARACTERISTICS**||||
|Forward Recovery Voltage<br>VSD<br>Reverse Recovery Time<br>tRR<br>Charge Time<br>ta<br>Discharge Time<br>tb<br>Reverse Recovery Time<br>QRR<br>~~a~~<br>~~ee ~~<br>~~a~~<br>~~ee~~|VGS= 0 V, IS = −1.0 A<br>TJ= 25C<br>−0.75<br>−1.0<br>V<br>TJ= 125C<br>−0.64<br>VGS= 0 V, dISD/dt= 100 A/ s,<br>IS= −1.0 A<br>16.2<br>ns<br>10.6<br>5.6<br>5.7<br>nC<br> ~~ee eeee~~<br>© ~~(pT~~<br>~~es~~|||



5. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 

6. Switching characteristics are independent of operating junction temperatures. 

## **SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS** (TJ = 25 C unless otherwise noted) 

|(TJ = 25 C unless otherwise noted)J = 25 C unless otherwise noted)= 25 C unless otherwise noted)C unless otherwise noted)C unless otherwise noted)<br>**Parameter**<br>**Symbol**<br>**Test Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**<br>Maximum Instantaneous<br>Forward Voltage<br>VF<br>IF= 0.1 A<br>0.34<br>0.39<br>V<br>IF= 1.0 A<br>0.47<br>0.53<br>Maximum Instantaneous<br>Reverse Current<br>IR<br>VR= 30 V<br>17<br>20<br>A<br>VR= 20 V<br>3.0<br>8.0<br>VR= 10 V<br>2.0<br>4.5<br>~~TOO~~<br>~~OOOCOOOCCCOSS Edd~~<br>~~|~~<br>~~_~~<br>~~==~~<br>~~es~~<br>~~es~~|(TJ = 25 C unless otherwise noted)J = 25 C unless otherwise noted)= 25 C unless otherwise noted)C unless otherwise noted)C unless otherwise noted)<br>**Parameter**<br>**Symbol**<br>**Test Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**<br>Maximum Instantaneous<br>Forward Voltage<br>VF<br>IF= 0.1 A<br>0.34<br>0.39<br>V<br>IF= 1.0 A<br>0.47<br>0.53<br>Maximum Instantaneous<br>Reverse Current<br>IR<br>VR= 30 V<br>17<br>20<br>A<br>VR= 20 V<br>3.0<br>8.0<br>VR= 10 V<br>2.0<br>4.5<br>~~TOO~~<br>~~OOOCOOOCCCOSS Edd~~<br>~~|~~<br>~~_~~<br>~~==~~<br>~~es~~<br>~~es~~|(TJ = 25 C unless otherwise noted)J = 25 C unless otherwise noted)= 25 C unless otherwise noted)C unless otherwise noted)C unless otherwise noted)<br>**Parameter**<br>**Symbol**<br>**Test Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**<br>Maximum Instantaneous<br>Forward Voltage<br>VF<br>IF= 0.1 A<br>0.34<br>0.39<br>V<br>IF= 1.0 A<br>0.47<br>0.53<br>Maximum Instantaneous<br>Reverse Current<br>IR<br>VR= 30 V<br>17<br>20<br>A<br>VR= 20 V<br>3.0<br>8.0<br>VR= 10 V<br>2.0<br>4.5<br>~~TOO~~<br>~~OOOCOOOCCCOSS Edd~~<br>~~|~~<br>~~_~~<br>~~==~~<br>~~es~~<br>~~es~~|(TJ = 25 C unless otherwise noted)J = 25 C unless otherwise noted)= 25 C unless otherwise noted)C unless otherwise noted)C unless otherwise noted)<br>**Parameter**<br>**Symbol**<br>**Test Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**<br>Maximum Instantaneous<br>Forward Voltage<br>VF<br>IF= 0.1 A<br>0.34<br>0.39<br>V<br>IF= 1.0 A<br>0.47<br>0.53<br>Maximum Instantaneous<br>Reverse Current<br>IR<br>VR= 30 V<br>17<br>20<br>A<br>VR= 20 V<br>3.0<br>8.0<br>VR= 10 V<br>2.0<br>4.5<br>~~TOO~~<br>~~OOOCOOOCCCOSS Edd~~<br>~~|~~<br>~~_~~<br>~~==~~<br>~~es~~<br>~~es~~|
|---|---|---|---|
|**SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS**(TJ= 85C unless otherwise noted)||||
|**Parameter**<br>**Symbol**<br>**Test Conditions**<br>**Min**|**Typ**|**Max**|**Unit**|
|Maximum Instantaneous<br>VF<br>IF= 0.1 A|0.22|0.35|V|
|Forward Voltage<br>IF= 1.0 A|0.40|0.50||
|Maximum Instantaneous<br>IR<br>VR= 30 V|0.22|2.5|mA|
|Reverse Current<br>VR= 20 V|0.11|1.6||
|VR= 10 V|0.06|1.2||
|**SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS**(TJ= 125C unless otherwise noted)||||
|**Parameter**<br>**Symbol**<br>**Test Conditions**<br>**Min**|**Typ**|**Max**|**Unit**|
|Maximum Instantaneous<br>VF<br>IF= 0.1 A|0.2|0.29|V|
|Forward Voltage<br>IF= 1.0 A|0.4|0.47||
|Maximum Instantaneous<br>IR<br>VR= 30 V|2.0|20|mA|
|Reverse Current<br>VR= 20 V|1.1|10.9||
|VR= 10 V|0.63|8.4||
|**SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS**(TJ= 25C unless otherwise noted)||||
|**Parameter**<br>**Symbol**<br>**Test Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**<br>Capacitance<br>C<br>VR= 5.0 V, f = 1.0 MHz<br>38<br>pF<br>7.Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).<br>~~-_—___}__}-_____}_}_}_}+]~~||||



7. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 

8. Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm[2] , 2 oz cu. 

9. Pulse Test: pulse width 300 s, duty cycle 2%. 

10.Switching characteristics are independent of operating junction temperatures. 

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**TYPICAL PERFORMANCE CURVES** (TJ = 25 C unless otherwise noted) 

**==> picture [487 x 635] intentionally omitted <==**

**----- Start of picture text -----**<br>
5 5<br>VGS = −1.9 V to −6 V TJ = 25 C VDS  10 V<br>4.5<br>4 Wt...Lh −1.8 V — 4 Ss| foe<br>3.5 Wie aa<br>−1.7 V<br>3 3<br>ae ay<br>2.5 Wi Ee −1.6 V ee<br>2 2<br>1.5 | A −1.5 V a T ee J = 25   C ee  A<br>1 −1.4 V 1<br>0.5 pOa −1.3 V−1.2 V FE T J  = 125 C 4 TJ = −55 C<br>0 SO 0 ZA<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 0.5 1 1.5 2 2.5 3<br>−VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) −VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)<br>Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics<br>0.1 0.15<br>VGS = −4.5 V T J  = 25 C<br>p e pT ff<br>0.09 e TJ = 100 C e VGS = −2.5 V<br>0.08 0.1<br>TJ = 25 C VGS = −4.5 V<br>0.07<br>p o o Ee<br>0.06 oT TJ = −55 C Se 0.05<br>K———- Se c aes enes es es<br>0.05 a pf of of of of ff<br>a a ee ee<br>0.04 a ee 0 Ff | | | | | |{ |<br>1.0 1.5 2.0 2.5 1 2 3 4 5<br>−ID, DRAIN CURRENT (AMPS) −ID, DRAIN CURRENT (AMPS)<br>Figure 3. On-Resistance versus Drain Current Figure 4. On-Resistance versus Drain Current<br>and Gate Voltage<br>1.6 10000<br>ID = −2.2 A VGS = 0 V<br>VGS = −4.5 V<br>Cepot aS ee eee <br>1.4 TJ = 150  C<br>ft T f e e SSS<br>1000<br>1.2 oaeS2-s - ------——<br>1.0 A TJ = 100 C<br>OO 100<br>0.8<br>pe S S S<br>0.6 eee 10 Feeet<br>−50 −25 0 25 50 75 100 125 150 2 4 6 8 10 12 14 16 18 20<br>TJ, JUNCTION TEMPERATURE (C) −VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)<br>Figure 5. On-Resistance Variation with Figure 6. Drain-to-Source Leakage Current<br>Temperature versus Voltage<br>, DRAIN CURRENT (AMPS) , DRAIN CURRENT (AMPS)<br>D D<br>−I −I<br>) )<br>, DRAIN−TO−SOURCE RESISTANCE ( , DRAIN−TO−SOURCE RESISTANCE (<br>DS(on) DS(on)<br>R R<br>, LEAKAGE (nA)<br>(NORMALIZED) DSS<br>−I<br>, DRAIN−TO−SOURCE RESISTANCE<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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## **TYPICAL PERFORMANCE CURVES** (TJ = 25 C unless otherwise noted) 

**==> picture [492 x 398] intentionally omitted <==**

**----- Start of picture text -----**<br>
1200 5 20<br>VDS = 0 V VGS = 0 V TJ = 25 C QT<br>1000<br>ppSe Ciss 4 4 PoACE Gee 16<br>800<br>a 3 ae 12<br>VDS VGS<br>600 Ls p o |<br>QGS QGD<br>a 2 Pt; TT Te 8<br>400 Crss<br>e e ee<br>200 Coss 1 ID = −2.2 A 4<br>FP R EER PACE—~4a TJ = 25 C<br>0 P N  A 0 0<br>5 0 5 10 15 20 0 1 2 3 4 5 6<br>VGS VDS QG, TOTAL GATE CHARGE (nC)<br>.~—__|_-<br>GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 8. Gate-To-Source and Drain - To - Source<br>Voltage versus Total Charge<br>Figure 7. Capacitance Variation<br>1000 3<br>V DD  = −15 V VGS = 0 V<br>I D  = −2.2 A fT [T Ty ett 2.5<br>VGS = −4.5 V<br>100 2<br>a tf UT 1.5 Coo<br>tr<br>10 td(off) 1<br>td(on)<br>1 Pee 0.50 TJ = 150 C TJ = 25 C<br>e e ss LZ<br>1 10 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0<br>RG, GATE RESISTANCE (OHMS) −VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)<br>C, CAPACITANCE (pF)<br>-VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)<br>t, TIME (ns)<br>, SOURCE CURRENT (AMPS)<br>s<br>−I<br>**----- End of picture text -----**<br>


**Figure 9. Resistive Switching Time Variation versus Gate Resistance** 

**Figure 10. Diode Forward Voltage versus Current** 

**==> picture [242 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br> TC = 25 C<br>TJ = 150 C<br>SINGLE PULSE 10 s<br>10<br>100 s<br>1 ms<br>1 10 ms<br>*See Note 2 on Page 1<br>0.1<br>RDS(on) LIMIT<br>THERMAL LIMIT dc<br>0.01 PACKAGE LIMIT Ee<br>0.1 1 10 100<br>−VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)<br>, DRAIN CURRENT (AMPS)<br>D<br>−I<br>**----- End of picture text -----**<br>


**Figure 11. Maximum Rated Forward Biased Safe Operating Area** 

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## **TYPICAL PERFORMANCE CURVES** (TJ = 25 C unless otherwise noted) 

**==> picture [476 x 198] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>alpeeaSO (OdaaeeeOdeeaOseeOeeeeeeoe deeoeeeeeeEd eeeEEE<br>|<br>|<br>100 D = 0.5 eSSr a<br>SSSeeee ee ee i ee<br>Rasa. 0.2 eee em 0 ee see i ce ee|eee<br>i 0.1 ee ee eeea a *See Note 2 on Page 1 ail<br>10 a eee |<br>_PSene 0.050.02 SSaer csee a =era P(pk) RD CURVES APPLY FOR POWER 0 JA(t) = r(t) R 0 JA {-H |<br>P er PULSE TRAIN SHOWN<br>1 }_LeaqidieeBOSea 0.01 aD10tt riiiiiOO0 ——eee0OO el t1 << t2 READ TIME AT tTJ(pk) − TA = P(pk)1 R 0 JA(t) |i}H{||<br>SINGLE PULSE DUTY CYCLE, D = t1/t2<br>0.1 i CAE |<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t, TIME (s)<br>r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


**Figure 12. Thermal Response** 

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**NTLJF3117P** 

## **TYPICAL SCHOTTKY PERFORMANCE CURVES** (TJ = 25 C unless otherwise noted) 

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10 10<br>a<br>1.0 TJ = 85 C 1.0<br>—f fi LL<br>TJ = 125 C TJ = 85 C<br>TJ = 25 C<br>TJ = −55 C TJ = 125 C TJ = 25 C<br>ney 4) an i 4 7) a an<br>0.1 0.1<br>| AP P| {[ |/{| | |<br>0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9<br>VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VF, MAXIMUM FORWARD VOLTAGE (VOLTS)<br>Figure 13. Typical Forward Voltage Figure 14. Maximum Forward Voltage<br>1.0E+0 1.0E+0<br>100E-3 100E-3<br>e e ee<br>TJ = 125 C<br>10E-3 ———— 10E-3<br>TJ = 125 C<br>1.0E-3 ——— ee TJ = 85 C ———_ . 1.0E-3 ——————————— TJ = 85 C<br>100E-6 100E-6<br>S S SS S————<br>10E-6 TJ = 25 C 10E-6 TJ = 25 C<br>— = — — — —<br>1.0E-6 1.0E-6<br>——— ee e ee<br>——E——————— ——————————E————————<br>100E-9 100E-9<br>0 10 20 30 0 10 20 30<br>VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>, INSTANTANEOUS FORWARD CURRENT (AMPS)<br>IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF<br>, REVERSE CURRENT (AMPS)<br>IR<br>, MAXIMUM REVERSE CURRENT (AMPS)<br>IR<br>**----- End of picture text -----**<br>


**Figure 15. Typical Reverse Current** 

**Figure 16. Maximum Reverse Current** 

## **ORDERING INFORMATION** 

|**ORDERING INFORMATION**|||
|---|---|---|
|**Device**|**Package**|**Shipping**†|
|NTLJF3117PT1G|WDFN6<br>(Pb-Free)|3000 / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

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**NTLJF3117P** 

## **REVISION HISTORY** 

|**Revision**<br>**Description of Changes**<br>**Date**<br>4<br>Rebranded the Data Sheet to**onsemi**format<br>2/9/2026<br>This document has undergone updates prior to the inclusion of this revision history table. The changes tracked here only reflect updates made<br>~~—~~|
|---|
|on the noted approval dates.|



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MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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**WDFN6 2x2, 0.65P** CASE 506AN ISSUE H 

DATE 25 JAN 2022 

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GENERIC<br>MARKING DIAGRAM*<br>1<br>XX M<br>XX = Specific Device Code<br>M = Date Code<br>**----- End of picture text -----**<br>


*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ � ”, may or may not be present. Some products may not follow the Generic Marking. 

**DOCUMENT NUMBER: 98AON20861D DESCRIPTION: WDFN6 2x2, 0.65P** 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

**PAGE 1 OF 1** 

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---

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