# Power MOSFET, N Channel, 25 V, 1 A, 0.249 ohm, SOT-363, Surface Mount ![Product image](https://novapart.co/image/farnell:2728026/) **URL**: https://novapart.co/products/NTJS4405NT1G/power-mosfet-n-channel-25-v-1-a-0249-ohm-sot-363 **SKU**: NTJS4405NT1G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.0500 **Stock**: 1000+ **Lead Time**: 141 days (indicative) ## Description Transistor Polarity:N Channel; Continuous Drain Current Id:1A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.249ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.5V; Powe ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 6Pins | | Channel Type | N Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 630mW | | Transistor Mounting | Surface Mount | | Rds(On) Test Voltage | 4.5V | | Transistor Case Style | SOT-363 | | Drain Source Voltage Vds | 25V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 1A | | Drain Source On State Resistance | 0.249ohm | | Gate Source Threshold Voltage Max | 1.5V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2728026/) ## NTJS4405N, NVJS4405N ## MOSFET – Single, N-Channel, Small Signal, SC-88 ## 25 V, 1.2 A **http://onsemi.com** ## **Features** **==> picture [190 x 176] intentionally omitted <==** **----- Start of picture text -----**
ee V(BR)DSS ee RDS(on) Typ ID Max
249 m @ 4.5 V
25 V 1.2 A
299 m @ 2.7 V
eee
N−Channel
Drain 1 2 5 6
Gate 3
Source : 4
**----- End of picture text -----**
- Advance Planar Technology for Fast Switching, Low RDS(on) - Higher Efficiency Extending Battery Life - AEC−Q101 Qualified and PPAP Capable − NVJS4405N - These Devices are Pb−Free and are RoHS Compliant ## **Applications** **==> picture [484 x 288] intentionally omitted <==** **----- Start of picture text -----**
||||||||||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |•|Boost and Buck Converter| |•|Load Switch| |•|Battery Protection| |Gate|3| |MAXIMUM RATINGS|(TJ = 25|°|C unless otherwise noted)| |Rating|Symbol|Value|Unit| |ee|ee|ee|Source|:|4| |Drain−to−Source Voltage|VDSS|25|V| |eeee|ee| |Gate−to−Source Voltage|VGS|8.0|V|MARKING DIAGRAM &| |es| |Drain Current|t < 5 s|TA = 25|°|C|ID|1.2|A|PIN ASSIGNMENT| |ee|Continuous Drain Current|ee|Steady|ee|TA = 25|°|C|eeee|ID|1.0|ee|A|e|6|D|D|S| |(Note 1)|State|TA = 75|°|C|0.80|1| |ee|SC−88/SOT−363|TS|M| |Power Dissipation (Note 1)|Steady State|PD|0.63|W|CASE 419B| |ee||||| |Power Dissipation (Note 1)|t|5 s|PD|0.89|W|1| |ee|eeee|ee|e|es|TOO| |ee|Pulsed Drain Current|ee|tp = 10 s|ee|IDM|3.7|ee|A|D|D|G| |Operating Junction and Storage Temperature|TJ,|−55 to|°|C|TS|= Device Code| |TSTG|+150| |M|= Date Code| |Source Current (Body Diode) (Note 1)|IS|0.8|A|||= Pb−Free Package| |Lead Temperature for Soldering Purposes (1/8|″|from case for 10 s)|TL|260|°|C|(Note: Microdot may be in either location)| |Po| |ESD Rating − Machine Model|25|V| |es| **----- End of picture text -----**
## **ORDERING INFORMATION** ## **THERMAL RESISTANCE RATINGS** **==> picture [277 x 65] intentionally omitted <==** **----- Start of picture text -----**
||||||||| |---|---|---|---|---|---|---|---| |ee|Rating|Symbol|ee|Max|ee|Unit| |Junction−to−Lead – Steady State (Note 1)|R|JL|102|°|C/W| |eeee| |Junction−to−Ambient – Steady State (Note 1)|R|JA|200| |eeee| |ee|Junction−to−Ambient − t|5 s (Note 1)|ee|R|JA|ee|140| **----- End of picture text -----**
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). **==> picture [181 x 72] intentionally omitted <==** **----- Start of picture text -----**
||||| |---|---|---|---| |Device|Package|Shipping|†| |NTJS4405NT1G|SC−88|3000 / Tape & Reel| |(Pb−Free)| |NVJS4405NT1G|SC−88|3000 / Tape & Reel| |(Pb−Free)| **----- End of picture text -----**
- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2011 **May, 2019 − Rev. 6** **NTJS4405N/D** ## **NTJS4405N, NVJS4405N** ## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTIC**|**S**(TJ= 25°C un|less otherwise noted)|less otherwise noted)||||| |---|---|---|---|---|---|---|---| |**Characteristic**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||||| |Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID|= 250�A|25|||V| |Drain−to−Source Breakdown Voltage
Temperature Coefficient|V(BR)DSS/TJ||||30||mV/°C| |Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,
VDS= 20 V|TJ= 25°C|||1.0|�A| ||||TJ= 125°C|||10|| |Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS= 8.0 V||||100|nA| |**ON CHARACTERISTICS**(Note 2)|||||||| |Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= 250�A||0.65||1.5|V| |Negative Threshold Temperature
Coefficient|VGS(TH)/TJ||||−2.0||mV/°C| |Drain−to−Source On Resistance|RDS(on)|VGS= 4.5 V, ID= 0.6 A|||249|350|m�| |||VGS= 2.7 V, ID= 0.2 A|||299|400|| |||VGS= 4.5 V, ID= 1.2 A|||260||| |Forward Transconductance|gFS|VDS= 5.0 V, ID= 0.5 A|||0.5||S| |**CHARGES AND CAPACITANCES**|||||||| |Input Capacitance|CISS|VGS= 0 V, f = 1.0 MHz,
VDS= 10 V|||49|60|pF| |Output Capacitance|COSS||||22.4|30|| |Reverse Transfer Capacitance|CRSS||||8.0|12|| |Total Gate Charge|QG(TOT)|VGS= 4.5 V, VDS= 5.0 V,
ID= 0.95 A|||0.75|1.5|nC| |Threshold Gate Charge|QG(TH)||||0.10||| |Gate−to−Source Charge|QGS||||0.30|0.50|| |Gate−to−Drain Charge|QGD||||0.20|0.40|| |**SWITCHING CHARACTERISTICS**(Note 3)|||||||| |Turn−On Delay Time|td(ON)|VGS= 4.5 V, VDS= 6.0 V,
ID= 0.5 A, RG= 50�|||6.0|12|ns| |Rise Time|tr||||4.7|8.0|| |Turn−Off Delay Time|td(OFF)||||25|35|| |Fall Time|tf||||41|60|| |**DRAIN−SOURCE DIODE CHARACTERISTICS**|||||||| |Forward Diode Voltage|VSD|VGS= 0 V,
IS= 0.6 A|TJ= 25°C||0.82|1.20|V| 2. Pulse Test: pulse width � 300 � s, duty cycle � 2%. 3. Switching characteristics are independent of operating junction temperatures. **http://onsemi.com** **2** **NTJS4405N, NVJS4405N** **TYPICAL PERFORMANCE CURVES** (TJ = 25 ° C unless otherwise noted) **==> picture [487 x 383] intentionally omitted <==** **----- Start of picture text -----**
5 2
4.5 7 V VGS = 3 V VDS ≥ 5 V TJ = −55 ° C
6 V 4 V
4 5.5 V 3.5 V
1.5
3.5 4.5 V VGS = 2.5 V TJ = 125 ° C
3
2.5 1
2
VGS = 2 V
1.5
0.5
1
25 ° C
0.5
0 TJ = 25 ° C 0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 0.5 1 1.5 2 2.5
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
1.0 0.4
VGS = 4.5 VGS = 4.5 V = 4.5 V TJ = 25 ° C
0.8
VGS = 2.7 V
0.3
0.6
TJ = 125J = 125 = 125 ° C
0.4 VGS = 4.5 V
TJ = 25J = 25 = 25 ° C 0.2
0.2
TJ = −55J = −55 = −55 ° C
0 0.1
0 1.0 2.0 3.0 4.0 5.0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
ID, DRAIN CURRENT (AMPS)D, DRAIN CURRENT (AMPS) DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS)
DRAIN CURRENT (AMPS) DRAIN CURRENT (AMPS)
ID, ID,
) � ) �
DRAIN−TO−SOURCE RESISTANCE ( DRAIN−TO−SOURCE RESISTANCE (
DS(on), DS(on),
R R
**----- End of picture text -----**
**==> picture [234 x 181] intentionally omitted <==** **----- Start of picture text -----**
1.0
VGS = 4.5 VGS = 4.5 V = 4.5 V
0.8
0.6
TJ = 125J = 125 = 125 ° C
0.4
TJ = 25J = 25 = 25 ° C
0.2
TJ = −55J = −55 = −55 ° C
0
0 1.0 2.0 3.0 4.0 5.0
ID, DRAIN CURRENT (AMPS)D, DRAIN CURRENT (AMPS) DRAIN CURRENT (AMPS)
) �
DRAIN−TO−SOURCE RESISTANCE (
DS(on),
R
**----- End of picture text -----**
**Figure 4. On−Resistance vs. Drain Current and Gate Voltage** **Figure 3. On−Resistance vs. Drain Current and Temperature** **==> picture [488 x 174] intentionally omitted <==** **----- Start of picture text -----**
1.8 10000
ID = 0.6 A VGS = 0 V
1.6 VGS = 4.5 V
1000
1.4
TJ = 150 ° C
1.2 100
1
TJ = 125 ° C
10
0.8
0.6 1
−50 −25 0 25 50 75 100 125 150 0 5 10 15 20 25
TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DRAIN−TO−SOURCE LEAKAGE (nA)
IDSS,
DS(on),
R RESISTANCE (NORMALIZED)
**----- End of picture text -----**
**Figure 5. On−Resistance Variation with Temperature** **Figure 6. Drain−to−Source Leakage Current vs. Voltage** **http://onsemi.com** **3** **NTJS4405N, NVJS4405N** ## **TYPICAL PERFORMANCE CURVES** (TJ = 25 ° C unless otherwise noted) **==> picture [238 x 198] intentionally omitted <==** **----- Start of picture text -----**
150
VDS = 0 V VGS = 0 V T J = 25 ° C
125
Ciss
100
C rss
75
50 C iss
25 C oss
0 C rss
10 5 0 5 10 15 20 25
VGS VDS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
**----- End of picture text -----**
**Figure 7. Capacitance Variation** **==> picture [241 x 173] intentionally omitted <==** **----- Start of picture text -----**
1000
VDD = 6.0 V
ID = 0.5 A
VGS = 4.5 V
100
tf
td(off)
10
td(on)
tr
1
1 10 100
RG, GATE RESISTANCE (OHMS)
t, TIME (ns)
**----- End of picture text -----**
**Figure 9. Resistive Switching Time Variation vs. Gate Resistance** **==> picture [237 x 420] intentionally omitted <==** **----- Start of picture text -----**
5
QG(T OT)
VGS = 4.5 V VDS = 5.0 V
4
3
QGS QGD
2
1
ID = 0.95 A
TJ = 25 ° C
0
0 0.2 0.4 0.6 0.8
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1.2
1.1 VGS = 0 V
1 TJ = 25 ° C
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
GATE−TO−SOURCE VOLTAGE (VOLTS)
GS,
V
, SOURCE CURRENT (AMPS)
IS
**----- End of picture text -----**
**Figure 10. Diode Forward Voltage vs. Current** **http://onsemi.com** **4** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **SC−88/SC70−6/SOT−363** CASE 419B−02 ISSUE Y **==> picture [479 x 420] intentionally omitted <==** **----- Start of picture text -----**
1
SCALE 2:1 2X DATE 11 DEC 2012
aaa H D
- D H NOTES:1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
A 3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
D GAGE PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU-
PLANE SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF
6 5 4 THE PLASTIC BODY AND DATUM H.
L2 L 5. DATUMS A AND B ARE DETERMINED AT DATUM H.
E E1 DETAIL A 6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THELEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.
1 2 3
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDI-
2X aaa C TION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
bbb H D 2X 3 TIPS RADIUS OF THE FOOT.
e MILLIMETERS INCHES
DIM MIN NOM MAX MIN NOM MAX
B l= 6X b : A −−− −−− 1.10 −−− −−− 0.043
ddd M C A-B D A1 0.00 −−− 0.10 0.000 −−− 0.004
TOP VIEW A2 0.70 0.90 1.00 0.027 0.035 0.039
b 0.15 0.20 0.25 0.006 0.008 0.010
C 0.08 0.15 0.22 0.003 0.006 0.009
A2 DETAIL A D 1.80 2.00 2.20 0.070 0.078 0.086
A E 2.00 2.10 2.20 0.078 0.082 0.086
E1 1.15 1.25 1.35 0.045 0.049 0.053
e 0.65 BSC 0.026 BSC
L 0.26 0.36 0.46 0.010 0.014 0.018
L2 0.15 BSC 0.006 BSC
aaa 0.15 0.006
bbb 0.30 0.012
6X ccc C ccc 0.10 0.004
(tll, A1 C A SEATINGPLANE Ma c === ddd 0.10 0.004
SIDE VIEW END VIEW GENERIC
MARKING DIAGRAM*
RECOMMENDED 6
SOLDERING FOOTPRINT*
6X 6X XXXM
0.30 0.66
1
Ta os 2.50 XXX = Specific Device Code
M = Date Code*
= Pb−Free Package
0.65 yo (Note: Microdot may be in either location)
PITCH
**----- End of picture text -----**
## DATE 11 DEC 2012 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. - *Date Code orientation and/or position may vary depending upon manufacturing location. **==> picture [83 x 5] intentionally omitted <==** **----- Start of picture text -----**
DIMENSIONS: MILLIMETERS
**----- End of picture text -----**
- *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. - *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may not follow the Generic Marking. ## **STYLES ON PAGE 2** **DOCUMENT NUMBER: 98ASB42985B** **DESCRIPTION: SC−88/SC70−6/SOT−363** Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **PAGE 1 OF 2** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 ## **SC−88/SC70−6/SOT−363** CASE 419B−02 ISSUE Y ## DATE 11 DEC 2012 |STYLE 1:|STYLE 2:|STYLE 3:|STYLE 4:|STYLE 5:|STYLE 6:| |---|---|---|---|---|---| |PIN 1. EMITTER 2|CANCELLED|CANCELLED|PIN 1. CATHODE|PIN 1. ANODE|PIN 1. ANODE 2| |2. BASE 2|||2. CATHODE|2. ANODE|2. N/C| |3. COLLECTOR 1|||3. COLLECTOR|3. COLLECTOR|3. CATHODE 1| |4. EMITTER 1|||4. EMITTER|4. EMITTER|4. ANODE 1| |5. BASE 1|||5. BASE|5. BASE|5. N/C| |6. COLLECTOR 2|||6. ANODE|6. CATHODE|6. CATHODE 2| |STYLE 7:|STYLE 8:|STYLE 9:|STYLE 10:|STYLE 11:|STYLE 12:| |PIN 1. SOURCE 2|CANCELLED|PIN 1. EMITTER 2|PIN 1. SOURCE 2|PIN 1. CATHODE 2|PIN 1. ANODE 2| |2. DRAIN 2||2. EMITTER 1|2. SOURCE 1|2. CATHODE 2|2. ANODE 2| |3. GATE 1||3. COLLECTOR 1|3. GATE 1|3. ANODE 1|3. CATHODE 1| |4. SOURCE 1||4. BASE 1|4. DRAIN 1|4. CATHODE 1|4. ANODE 1| |5. DRAIN 1||5. BASE 2|5. DRAIN 2|5. CATHODE 1|5. ANODE 1| |6. GATE 2||6. COLLECTOR 2|6. GATE 2|6. ANODE 2|6. CATHODE 2| |STYLE 13:|STYLE 14:|STYLE 15:|STYLE 16:|STYLE 17:|STYLE 18:| |PIN 1. ANODE|PIN 1. VREF|PIN 1. ANODE 1|PIN 1. BASE 1|PIN 1. BASE 1|PIN 1. VIN1| |2. N/C|2. GND|2. ANODE 2|2. EMITTER 2|2. EMITTER 1|2. VCC| |3. COLLECTOR|3. GND|3. ANODE 3|3. COLLECTOR 2|3. COLLECTOR 2|3. VOUT2| |4. EMITTER|4. IOUT|4. CATHODE 3|4. BASE 2|4. BASE 2|4. VIN2| |5. BASE|5. VEN|5. CATHODE 2|5. EMITTER 1|5. EMITTER 2|5. GND| |6. CATHODE|6. VCC|6. CATHODE 1|6. COLLECTOR 1|6. COLLECTOR 1|6. VOUT1| |STYLE 19:|STYLE 20:|STYLE 21:|STYLE 22:|STYLE 23:|STYLE 24:| |PIN 1. I OUT|PIN 1. COLLECTOR|PIN 1. ANODE 1|PIN 1. D1 (i)|PIN 1. Vn|PIN 1. CATHODE| |2. GND|2. COLLECTOR|2. N/C|2. GND|2. CH1|2. ANODE| |3. GND|3. BASE|3. ANODE 2|3. D2 (i)|3. Vp|3. CATHODE| |4. V CC|4. EMITTER|4. CATHODE 2|4. D2 (c)|4. N/C|4. CATHODE| |5. V EN|5. COLLECTOR|5. N/C|5. VBUS|5. CH2|5. CATHODE| |6. V REF|6. COLLECTOR|6. CATHODE 1|6. D1 (c)|6. N/C|6. CATHODE| |STYLE 25:|STYLE 26:|STYLE 27:|STYLE 28:|STYLE 29:|STYLE 30:| |PIN 1. BASE 1|PIN 1. SOURCE 1|PIN 1. BASE 2|PIN 1. DRAIN|PIN 1. ANODE|PIN 1. SOURCE 1| |2. CATHODE|2. GATE 1|2. BASE 1|2. DRAIN|2. ANODE|2. DRAIN 2| |3. COLLECTOR 2|3. DRAIN 2|3. COLLECTOR 1|3. GATE|3. COLLECTOR|3. DRAIN 2| |4. BASE 2|4. SOURCE 2|4. EMITTER 1|4. SOURCE|4. EMITTER|4. SOURCE 2| |5. EMITTER|5. GATE 2|5. EMITTER 2|5. DRAIN|5. BASE/ANODE|5. GATE 1| |6. COLLECTOR 1|6. DRAIN 1|6. COLLECTOR 2|6. DRAIN|6. CATHODE|6. DRAIN 1| Note: Please refer to datasheet for style callout. If style type is not called out in the datasheet refer to the device datasheet pinout or pin assignment. |**DOCUMENT NUMBER:**|**98ASB42985B**|Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.|Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.| |---|---|---|---| |**DESCRIPTION:**|**SC−88/SC70−6/SOT−363**||**PAGE 2 OF 2**| ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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