# Power MOSFET, N Channel, 30 V, 7 A, 0.025 ohm, TSOP, Surface Mount ![Product image](https://novapart.co/image/farnell:2317624/) **URL**: https://novapart.co/products/NTGS4141NT1G/power-mosfet-n-channel-30-v-7-a-0025-ohm-tsop **SKU**: NTGS4141NT1G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.1190 **Stock**: 1000+ **Lead Time**: 106 days (indicative) ## Description Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0215ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs: ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 6Pins | | Channel Type | N Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 2W | | Transistor Mounting | Surface Mount | | Rds(On) Test Voltage | 10V | | Transistor Case Style | TSOP | | Drain Source Voltage Vds | 30V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 7A | | Drain Source On State Resistance | 0.025ohm | | Gate Source Threshold Voltage Max | 3V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2317624/) NTGS4141N, NVGS4141N ## Power MOSFET ## **30 V, 7.0 A, Single N−Channel, TSOP−6** ## **Features** - Low RDS(on) - Low Gate Charge - NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable - Pb−Free Package is Available ## **Applications** - Load Switch **http://onsemi.com** **==> picture [190 x 62] intentionally omitted <==** **----- Start of picture text -----**
V(BR)DSS RDS(on) TYP ID MAX
ee
ee
21.5 m @ 10 V
30 V 7.0 A
30 m @ 4.5 V
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- Notebook PC ## **N−Channel** - Desktop PC **==> picture [161 x 234] intentionally omitted <==** **----- Start of picture text -----**
Drain 1 2 5 6
Gate 3
7
Source 4
MARKING
DIAGRAM
TSOP−6
CASE 318G
1 STYLE 1 XX M
|
XX = Device Code
M = Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
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MAXIMUM RATINGS (TJ = 25 ° C unless otherwise noted)
Rating Symbol Value Unit
Drain−to−Source Voltage VDSS 30 V
es
Gate−to−Source Voltage VGS ± 20 V
es Continuous Drain Steady TA = 25 ° C es ID ee 5.0 A
ee Current (Note 1) State TA = 85 ° C ee 3.6 es
t ≤ 10 s TA = 25 ° C 7.0
=F
Power Dissipation Steady TA = 25 ° C PD 1.0 W
(Note 1) State
t ≤ 10 s 2.0
| Continuous Drain Fi| Steady eT TA = 25 ° C | ID |Hi! 3.5 A »
Current (Note 2) State TA = 85 ° C 2.5 1
Power Dissipation TA = 25 ° C PD 0.5 W
(Note 2)
a= =2
ee ee
Pulsed Drain Current tp = 10 s, VGS=10V IDM 45 A XX
M
oH, Pulsed Drain Current tp = 30 s, VGS=5V ID 30 A
Operating Junction and Storage Temperature TJ, −55 to ° C
TSTG 150
ee
Source Current (Body Diode) IS 2.0 A
es
Single Pulse Drain−to−Source Avalanche Energy EAS 54 mJ
(VDD = 30 V, IL = 10.4 A, VGS = 10 V,
L = 1.0 mH, RG = 25 )
ee Lead Temperature for Soldering Purposes T ee L 260 ° C
(1/8 ″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be ee
assumed, damage may occur and reliability may be affected.
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## **PIN ASSIGNMENT** **==> picture [73 x 83] intentionally omitted <==** **----- Start of picture text -----**
Drain Drain Source
6 5 4
|
1 2 3
Drain Drain Gate
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## **THERMAL RESISTANCE RATINGS** |**THERMAL RESISTANCE RATINGS**|||| |---|---|---|---| |**Rating**|**Symbol**|**Max**|**Unit**| |Junction−to−Ambient – Steady State (Note 1)|RθJA|125|°C/W| |Junction−to−Ambient – t≤10 s (Note 1)|RθJA|62.5|| |Junction−to−Ambient – Steady State (Note 2)|RθJA|248|| ## **ORDERING INFORMATION** See detailed ordering and shipping information ion page 5 of this data sheet. 1. Surface−mounted on FR4 board using 1 inch sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 2. Surface−mounted on FR4 board using the minimum recommended pad size (Cu area = 0.0773 in sq). Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2014 **August, 2014 − Rev. 6** **NTGS4141N/D** ## **NTGS4141N, NVGS4141N** ## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS **(TJ|= 25°C unless o|therwise noted)|therwise noted)||||| |---|---|---|---|---|---|---|---| |**Characteristic**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||||| |Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID= 250�A||30|||V| |Drain−to−Source Breakdown Voltage
Temperature Coefficient|V(BR)DSS/TJ||||18.4||mV/°C| |Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,
VDS= 24 V|TJ= 25°C|||1.0|�A| ||||TJ= 125°C|||10|| |Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS=±20 V||||±100|nA| |**ON CHARACTERISTICS**(Note 3)|||||||| |Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= 250�A||1.0||3.0|V| |Negative Threshold Temperature Coefficient|VGS(TH)/TJ||||5.7||mV/°C| |Drain−to−Source On Resistance|RDS(on)|VGS= 10 V, ID= 7.0 A|||21.5|25|m�| |||VGS= 4.5 V, ID= 6.0 A|||30|35|| |Forward Transconductance|gFS|VDS= 10 V, ID= 7.0 A|||30||S| |**CHARGES, CAPACITANCES AND GATE RESISTANCE**|||||||| |Input Capacitance|CISS|VGS= 0 V, f = 1.0 MHz,
VDS= 24 V|||560||pF| |Output Capacitance|COSS||||115||| |Reverse Transfer Capacitance|CRSS||||75||| |Total Gate Charge|QG(TOT)|VGS= 10 V, VDS= 15 V,
ID= 7.0 A|||12||nC| |Threshold Gate Charge|QG(TH)||||0.85||| |Gate−to−Source Charge|QGS||||1.9||| |Gate−to−Drain Charge|QGD||||3.0||| |Total Gate Charge|QG(TOT)|VGS= 4.5 V, VDS= 15 V,
ID= 7.0 A|||6.0||nC| |Threshold Gate Charge|QG(TH)||||0.8||| |Gate−to−Source Charge|QGS||||1.85||| |Gate−to−Drain Charge|QGD||||3.0||| |Gate Resistance|RG||||2.8||�| |**SWITCHING CHARACTERISTICS**(Note 4)|||||||| |Turn−On Delay Time|td(ON)|VGS= 10 V, VDS= 24 V,
ID= 7.0 A, RG= 3.0�|||6.0||ns| |Rise Time|tr||||15||| |Turn−Off Delay Time|td(OFF)||||18||| |Fall Time|tf||||4.0||| |**DRAIN − SOURCE DIODE CHARACTERISTICS**|||||||| |Forward Diode Voltage|VSD|VGS= 0 V,
IS= 2.0 A|TJ= 25°C||0.78|1.0|V| ||||TJ= 125°C||0.63||| |Reverse Recovery Time|tRR|VGS= 0 V
dIS/dt = 100 A/�s, IS= 2.0 A|||15||ns| |Charge Time|ta||||9.0||| |Discharge Time|tb||||6.0||| |Reverse Recovery Charge|QRR||||8.0||nC| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: pulse width � 300 � s, duty cycle � 2%. 4. Switching characteristics are independent of operating junction temperatures. **http://onsemi.com** **2** **NTGS4141N, NVGS4141N** ## **TYPICAL PERFORMANCE CURVES** **==> picture [489 x 604] intentionally omitted <==** **----- Start of picture text -----**
15 10 V TJ = 25 ° C 15 VDS ≥ 10 V
6 V 3.5 V
4.5 V
10 10
3 V
5 5
125 ° C
25 ° C
2.6 V
0 0 TJ = −55 ° C
0 2 4 6 8 10 1 2 3 4 5
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
0.05 0.05
TJ = 25 ° C TJ = 25 ° C
ID = 7 A
0.04
0.04
0.03
0.03 VGS = 4.5 V
0.02
VGS = 10 V
0.02
0.01
0.01 0
0 2 4 6 8 10 0 5 10 15
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and
Voltage Gate Voltage
2.0 10000
ID = 7 A VGS = 0 V
V GS = 10 V
1.5
1000
TJ = 150 ° C
1.0
100 TJ = 125 ° C
0.5
0 10
−50 −25 0 25 50 75 100 125 150 0 5 10 15 20 25 30
TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DRAIN CURRENT (AMPS) DRAIN CURRENT (AMPS)
ID, ID,
) � ) �
DRAIN−TO−SOURCE RESISTANCE ( DRAIN−TO−SOURCE RESISTANCE (
DS(on), DS(on),
R R
DRAIN−TO−SOURCE LEAKAGE CURRENT (nA)
DS(on),
R RESISTANCE (NORMALIZED)
IDSS,
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**Figure 5. On−Resistance Variation with Temperature** **Figure 6. Drain−to−Source Leakage Current vs. Voltage** **http://onsemi.com** **3** **NTGS4141N, NVGS4141N** ## **TYPICAL PERFORMANCE CURVES** **==> picture [243 x 608] intentionally omitted <==** **----- Start of picture text -----**
1200
VDS = 0 V VGS = 0 V TJ = 25 ° C
1000
Ciss
800
600 Ciss
400 Crss
200 Coss
0 Crss
10 5 0 5 10 15 20 25
VGS VDS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
1000
VDD = 24 V
ID = 7 A
VGS = 10 V
td(off)
100
tf
tr
10
td(on)
1
1 10 100
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
100
10 � s
10
100 � s
1 ms
1
0 V ≤ VGS ≤ 20 V
10 ms
SINGLE PULSE
TC = 25 ° C
0.1
RDS(on) LIMIT
THERMAL LIMIT dc
PACKAGE LIMIT
0.01
0.1 1 10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
t, TIME (ns)
, DRAIN CURRENT (AMPS)
ID
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10
QT
8
VGS
6
4 QGS QGD
2 ID = 7 A
VDD = 15 V
TJ = 25 ° C
0
0 2 4 6 8 10 12
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate−To−Source and
Drain−To−Source Voltage vs. Total Charge
7
VGS = 0 V
6 TJ = 25 ° C
5
4
3
2
1
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
VGS, GATE−TO−SOURCE VOLTAGE (V)
, SOURCE CURRENT (AMPS)
IS
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GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) **Figure 10. Diode Forward Voltage vs. Current** **==> picture [243 x 170] intentionally omitted <==** **----- Start of picture text -----**
60
ID = 10.4 A
40
20
0
25 50 75 100 125 150
TJ, STARTING JUNCTION TEMPERATURE ( ° C)
AVALANCHE ENERGY (mJ)
EAS, SINGLE PULSE DRAIN−TO−SOURCE
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**Figure 11. Maximum Rated Forward Biased Safe Operating Area** **Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature** **http://onsemi.com** **4** **NTGS4141N, NVGS4141N** ## **TYPICAL PERFORMANCE CURVES** **==> picture [494 x 409] intentionally omitted <==** **----- Start of picture text -----**
2.5 8.0
2.25 References is TJ- 7.5 References is TJ-
7.0 max [ = 150] [°] [C]
max [ = 150] [°] [C]
2.0 6.5
1.75 6.05.5 R � JA, 1 sq in R � JA , t < 10 s, 1 sq in
1.5 5.0
R � JA, t < 10 s, 1 sq in 4.5
1.25 R � JA, 1 sq in 4.0
3.5
1.0
3.0
0.75 2.5 R � JA, min pad
2.0
0.5
1.5
0.25 R � JA , min pad 1.0
0.5
0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
TA, AMBIENT TEMPERATURE ( ° C) TA, AMBIENT TEMPERATURE ( ° C)
Figure 13. Maximum Power Derating Chart Figure 14. Current Derating Chart
1000
100 D = 0.5
0.2
0.1
10 0.05
0.02
1
0.01
0.1
Single Pulse
0.01
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t, PULSE TIME (s)
, POWER DISSIPATION (W) , POWER DISSIPATION (W)
D D
P P
C/W)
°
, TRANSIENT THERMAL RESPONSE (
thja(t)
R
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**Figure 15. Thermal Response** **Table 1. ORDERING INFORMATION** |**Part Number**|**Marking**
**(XX)**|**Package**|**Shipping**†| |---|---|---|---| |NTGS4141NT1|S4|TSOP−6|3000 / Tape & Reel| |NTGS4141NT1G|S4|TSOP−6
(Pb−Free)|3000 / Tape & Reel| |NVGS4141NT1G|VS4|TSOP−6
(Pb−Free)|3000 / Tape & Reel| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. **http://onsemi.com** **5** **NTGS4141N, NVGS4141N** ## **PACKAGE DIMENSIONS** **TSOP−6** CASE 318G−02 ISSUE V ## NOTES: **==> picture [469 x 162] intentionally omitted <==** **----- Start of picture text -----**
D 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
H 2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM
LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.
6 5 4 L2 4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
GAUGE PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR
E1 E PLANE GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSIONS D
ÉÉ AND E1 ARE DETERMINED AT DATUM H.
1 2 3 5. PIN ONE INDICATOR MUST BE LOCATED IN THE INDICATED ZONE.
NOTE 5 ÉÉ b L M C PLANESEATING DIM MIN MILLIMETERSNOM MAX
DETAIL Z A 0.90 1.00 1.10
e A1 0.01 0.06 0.10
Cian: === b 0.25 0.38 0.50
c 0.10 0.18 0.26
A c DE 2.902.50 3.002.75 3.103.00 STYLE 1:PIN 1. DRAIN
0.05 E1 1.30 1.50 1.70 2. DRAIN
e 0.85 0.95 1.05 3. GATE
L 0.20 0.40 0.60 4. SOURCE
ae A1 DETAIL Z a ==== L2M 0° 0.25 BSC− 1 0° 5.6. DRAINDRAIN
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RECOMMENDED
SOLDERING FOOTPRINT*
6X
i es 0.60
P O U L
3.20 6X
Loud 0.95
0.95
PITCH
DIMENSIONS: MILLIMETERS
**----- End of picture text -----**
**SOLDERING FOOTPRINT*** **==> picture [227 x 26] intentionally omitted <==** **----- Start of picture text -----**
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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