# Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 2.6 A, 2.6 A, 0.052 ohm ![Product image](https://novapart.co/image/farnell:2533185/) **URL**: https://novapart.co/products/NTGD4167CT1G/dual-mosfet-complementary-n-and-p-channel-30-v-26 **SKU**: NTGD4167CT1G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Dual MOSFETs **Price**: €0.1780 **Stock**: 50+ **Lead Time**: 113 days (indicative) ## Description Transistor Polarity:N and P Channel; Continuous Drain Current Id:2.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.052ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 6Pins | | Channel Type | Complementary N and P Channel | | Product Range | - | | Qualification | - | | Transistor Case Style | TSOP | | Operating Temperature Max | 150°C | | Power Dissipation N Channel | 900mW | | Power Dissipation P Channel | 900mW | | Drain Source Voltage Vds N Channel | 30V | | Drain Source Voltage Vds P Channel | 30V | | Continuous Drain Current Id N Channel | 2.6A | | Continuous Drain Current Id P Channel | 2.6A | | Drain Source On State Resistance N Channel | 0.052ohm | | Drain Source On State Resistance P Channel | 0.052ohm | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2533185/) ## NTGD4167C MOSFET – POWER, Dual, Complementary, TSOP-6 ~~——~~ 30 V, +2.9/-2.2 A ## **Features** - Complementary N−Channel and P−Channel MOSFET - Small Size (3 x 3 mm) Dual TSOP−6 Package - Leading Edge Trench Technology for Low On Resistance - Reduced Gate Charge to Improve Switching Response - Independently Connected Devices to Provide Design Flexibility - This is a Pb−Free Device ## **Applications** ## **http://onsemi.com** |~~a~~|~~ee~~|~~ee~~| |---|---|---| |**V(BR)DSS**
~~a~~|**RDS(on) MAX**
~~ee~~|**ID MAX**(Note 1)
~~ee~~| |N−Ch
30 V
~~a~~|90 m @ 4.5 V
~~ee~~|2.6 A
~~ee~~| ||125 m @ 2.5 V|2.2 A| |P−Ch
−30 V
~~———~~|170 m @ −4.5 V
~~———~~|−1.9 A
~~———~~| ||300 m @ −2.5 V
~~———~~|−1.0 A
~~———~~| - DC−DC Conversion Circuits - Load/Power Switching with Level Shift **==> picture [188 x 379] intentionally omitted <==** **----- Start of picture text -----**
D1 D2
G1 G2
S1 S2
N−CHANNEL MOSFET P−CHANNEL MOSFET
MARKING
DIAGRAM
1
TSOP−6 © o TA M on
CASE 318G
STYLE 13
1
TA = Specific Device Code
M = Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
a
PIN CONNECTION
G1 1 6 D1
S2 2 5 S1
G2 3 4 D2
(Top View)
**----- End of picture text -----**
**MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) |**MAXIMUM RATINGS**(TJ = 25J = 25= 25°C unless otherwise noted)|**MAXIMUM RATINGS**(TJ = 25J = 25= 25°C unless otherwise noted)|**MAXIMUM RATINGS**(TJ = 25J = 25= 25°C unless otherwise noted)|C unless otherwise noted)|C unless otherwise noted)|| |---|---|---|---|---|---| |**Parameter**|||**Symbol**|**Value**|**Unit**| |Drain−to−Source Voltage|||VDSS|30|V| |Gate−to−Source Voltage
(N−Ch & P−Ch)
~~Ee~~|||VGS
~~et~~|±12
~~et~~|V
~~et~~| |**N−Channel**
Continuous Drain
Current (Note 1)
~~Ee~~
~~PpET~~|Steady
State
~~Ee~~|TA= 25°C
TA= 85°C
~~Ee~~|ID
~~et~~
~~TEy)~~|2.6
1.9
~~et~~|A
~~et~~
~~Ey)~~| ||t ≤5 s
~~Ee~~
~~ET~~|TA= 25°C
~~Ee ~~
~~ETT~~||2.9
~~et~~
~~Ey)~~|| |**P−Channel**
Continuous Drain
Current (Note 1)
~~PpET~~|Steady
State
~~ET~~|TA= 25°C
TA= 85°C
~~ETT~~|ID
~~TEy)~~|−1.9
−1.4
~~Ey)~~|A
~~Ey)~~| ||t ≤5 s
~~ET~~|TA= 25°C
~~ETT~~||−2.2
~~Ey)~~|| |Power Dissipation
(Note 1)
~~Pp ET~~
~~To~~|Steady State
~~ET~~
~~To~~|TA= 25°C
~~ETT~~
~~To~~|PD
~~T Ey)~~
~~To~~|0.9
~~Ey)~~
~~To~~|W
~~Ey)~~
~~To~~| ||t ≤5 s
~~To~~|||1.1
~~To~~|| |Pulsed Drain
Current
~~SF~~|N−Ch
~~SF~~|tp= 10 s
~~SF~~|IDM
~~SF~~
~~|~~|8.6
~~SF~~|A
~~SF~~
~~|~~| ||P−Ch
~~SF~~|||−6.3
~~SF~~
~~||~~|| |Operating Junction and Storage Temperature
~~-________|~~|||TJ, TSTG
~~-________|~~
~~|~~|−55 to
150
~~-________|~~
~~||~~|°C
~~-________|~~
~~|~~| |Source Current (Body Diode)
~~-________|~~|||IS
~~-________|~~
~~|~~|±0.9
~~-________|~~
~~||~~|A
~~-________|~~
~~|~~| |Lead Temperature for Soldering Purposes
(1/8″from case for 10 s)
~~-________|~~|||TL
~~-________|~~
~~|~~|260
~~-________|~~
~~| |~~|°C
~~-________|~~
~~|~~| ## **THERMAL RESISTANCE RATINGS** |**THERMAL RESISTANCE RATINGS**|||| |---|---|---|---| |**Parameter**|**Symbol**|**Value**|**Unit**| |Junction−to−Ambient – Steady State (Note 1)|R JA|140|°C/W| |Junction−to−Ambient – t≤5 s (Note 1)|R JA|110|°C/W| Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq - [1 oz] including traces). ## **ORDERING INFORMATION** See detailed ordering and shipping information in the package dimensions section on page 9 of this data sheet. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2008 **May, 2019 − Rev. 1** **NTGD4167C/D** ## **NTGD4167C** **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTIC**|**S **(TJ= 25°C|unless|otherwise noted)|otherwise noted)||||| |---|---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**N/P**|**Test Conditions**||**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**||||||||| |Drain−to−Source Breakdown Voltage|V(BR)DSS|N|VGS= 0 V|ID= 250�A|30|||V| |||P||ID= −250�A|−30|||| |Drain−to−Source Breakdown Voltage
Temperature Coefficient|V(BR)DSS/TJ|N||||21.4||mV/°C| |||P||||22.2||| |Zero Gate Voltage Drain Current|IDSS|N|VGS= 0 V, VDS= 24 V|TJ= 25°C|||1.0|�A| |||P|VGS= 0 V, VDS= −24 V||||−1.0|| |||N|VGS= 0 V, VDS= 24 V|TJ= 85°C|||10|| |||P|VGS= 0 V, VDS= −24 V||||−10|| |Gate−to−Source Leakage Current|IGSS|N|VDS= 0 V, VGS=|±12 V|||±100|nA| |||P|VDS= 0 V, VGS=|±12 V|||±100|| |**ON CHARACTERISTICS**(Note 2)||||||||| |Gate Threshold Voltage|VGS(TH)|N|VGS= VDS|ID= 250�A|0.5|0.9|1.5|V| |||P||ID= −250�A|−0.5|−1.1|−1.5|| |Drain−to−Source On Resistance|RDS(on)|N|VGS= 4.5 V , ID=|2.6 A||52|90|m�| ||||VGS= 2.5 V , ID=|2.2 A||67|125|| |||P|VGS= −4.5 V , ID=|−1.9 A||130|170|| ||||VGS= −2.5 V, ID=|−1.0 A||202|300|| |Forward Transconductance|gFS|N|VDS= 15 V, ID=|2.6 A||2.6||S| |||P|VDS= −15 V , ID=|−1.9 A||2.6||| |**CHARGES AND CAPACITANCES**||||||||| |Input Capacitance|CISS|N|f = 1 MHz, VGS= 0 V|VDS= 15 V||295||pF| |Output Capacitance|COSS|||||48||| |Reverse Transfer Capacitance|CRSS|||||27||| |Input Capacitance|CISS|P||VDS= −15 V||419||| |Output Capacitance|COSS|||||51||| |Reverse Transfer Capacitance|CRSS|||||26||| |Total Gate Charge|QG(TOT)|N|VGS= 4.5 V, VDS= 15|V, ID= 2.0 A||3.7|5.5|nC| |Threshold Gate Charge|QG(TH)|||||0.6||| |Gate−to−Source Gate Charge|QGS|||||0.9||| |Gate−to−Drain “Miller” Charge|QGD|||||0.8||| |Total Gate Charge|QG(TOT)|P|VGS= −4.5 V, VDS= −15 V, ID= −2.0 A|||3.9|6.0|| |Threshold Gate Charge|QG(TH)|||||0.6||| |Gate−to−Source Gate Charge|QGS|||||1.0||| |Gate−to−Drain “Miller” Charge|QGD|||||1.0||| |**SWITCHING CHARACTERISTICS**(Note 3)||||||||| |Turn−On Delay Time|td(ON)|N|VGS= 4.5 V, VDD= 15 V,
ID= 1.0 A, RG= 6.0�|||7.0||ns| |Rise Time|tr|||||4.0||| |Turn−Off Delay Time|td(OFF)|||||14||| |Fall Time|tf|||||2.0||| |Turn−On Delay Time|td(ON)|P|VGS= −4.5 V, VDD= −15 V,
ID= −1.0 A, RG= 6.0�|||8.0||| |Rise Time|tr|||||8.0||| |Turn−Off Delay Time|td(OFF)|||||22||| |Fall Time|tf|||||8.0||| 2. Pulse Test: pulse width � 300 � s, duty cycle � 2%. **http://onsemi.com** **2** **NTGD4167C** 3. Switching characteristics are independent of operating junction temperatures. **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTIC**|**S **(TJ= 25°C|unless|otherwise noted)|otherwise noted)||||| |---|---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**N/P**|**Test Conditions**||**Min**|**Typ**|**Max**|**Unit**| |**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||||| |Forward Diode Voltage|VSD|N|VGS= 0 V, TJ= 25°C|IS= 0.9 A||0.7|1.2|V| |||P||IS= −0.9 A||−0.8|−1.2|| |Reverse Recovery Time|tRR|N|VGS= 0 V,
dIS/ dt = 100 A/�s, IS= 0.9 A|||8.0||ns| |Charge Time|ta|||||5.0||| |Discharge Time|tb|||||3.0||| |Reverse Recovery Charge|QRR|||||3.0||nC| |Reverse Recovery Time|tRR|P|VGS= 0 V,
dIS/ dt = 100 A/�s, IS= −0.9 A|||12||ns| |Charge Time|ta|||||10||| |Discharge Time|tb|||||2.0||| |Reverse Recovery Charge|QRR|||||7.0||nC| **http://onsemi.com** **3** **NTGD4167C** ## **N−CHANNEL TYPICAL CHARACTERISTICS** **==> picture [494 x 581] intentionally omitted <==** **----- Start of picture text -----**
9.0 9.0
VGS = 4.5 V TJ = 25 ° C
8.0 3.5 V 8.0 VDS = 5 V
7.0 2.5 V 2.0 V 7.0
6.0 6.0
5.0 5.0
4.0 4.0
3.0 3.0 −55 ° C
2.0 1.5 V 2.0 125 ° C 25 ° C
1.0 1.0
0 0.0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.75 1 1.25 1.5 1.75 2 2.25 2.5
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
0.20 0.10
0.18 TJ = 25 ° C TJ = 25 ° C
0.09
0.16
0.08
0.14 VGS = 2.5 V
0.07
0.12
0.10 ID = 2.6 A 0.06
V GS = 4.5 V
0.08
0.05
0.06
0.04
0.04
0.03
0.02
0 0.02
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 3. On−Region vs. Gate−To−Source Figure 4. On−Resistance vs. Drain Current and
Voltage Temperature
1.6 400
1.5 ID = 2.6 A TJ = 25 ° C
1.4 VGS = 4.5 V 350 CISS Vf = 1 MHzGS = 0 V
300
1.3
250
1.2
1.1 200
1.0
150
0.9
100
0.8 COSS
50
0.7
CRSS
0.6 0
−50 −25 0 25 50 75 100 125 150 0 5 10 15 20 25 30
TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
, DRAIN CURRENT (A)
, DRAIN CURRENT (A)ID ID
) �
) �
TANCE (
, DRAIN−TO−SOURCE RESIS-
DS(on)
R , DRAIN−TO−SOURCE RESISTANCE (
DS(on)
R
C, CAPACITANCE (pF)
, DRAIN−TO−SOURCE RESISTANCE
DS(on)
R
**----- End of picture text -----**
**Figure 5. On−Resistance Variation with Temperature** **Figure 6. Capacitance Variation** **http://onsemi.com** **4** **NTGD4167C** **==> picture [493 x 401] intentionally omitted <==** **----- Start of picture text -----**
5 16 10
QT
14
4
12
VDS
10
3
VGS
QGD 8 1.0 TJ = 150 ° C
2 Q GS 6 TJ = 25 ° C
ID = 2.0 A 4
1 TJ = 25 ° C
VDS = 15 V 2
0 0 0.1
0 1 2 3 4 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
QG, TOTAL GATE CHARGE (nC) VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 7. Gate−to−Source and Figure 8. Diode Forward Voltage versus
Drain−to−Source Voltage versus Total Charge Current
1.2 40
1.1 I D = 250 � A
1.0 30
0.9
0.8 20
0.7
0.6 10
0.5
0.4 0
−50 −25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 100 1000
TJ, JUNCTION TEMPERATURE ( ° C) SINGLE PULSE TIME (s)
Figure 9. Threshold Voltage Figure 10. Single Pulse Maximum Power
Dissipation
V
DS
, SOURCE CURRENT (A)
IS
, GATE−TO−SOURCE VOLTAGE (V)
GS
V , DRAIN−TO−SOURCE VOLTAGE (V)
(V)
GS(th)
V
POWER (W)
**----- End of picture text -----**
**==> picture [239 x 176] intentionally omitted <==** **----- Start of picture text -----**
100
VGS = 12 V
Single Pulse
10 TA = 25 ° C
100 � s
1 1 ms
10 ms
0.1
RDS(on) Limit
Thermal Limit
dc
Package Limit
0.01
0.1 1 10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
, DRAIN CURRENT (A)
ID
**----- End of picture text -----**
**Figure 11. Maximum Rated Forward Biased Safe Operating Area** **http://onsemi.com** **5** **NTGD4167C** **==> picture [493 x 176] intentionally omitted <==** **----- Start of picture text -----**
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01 Single Pulse
0.01
0.0001 0.001 0.01 0.1 1 10 100 1000
t, TIME (s)
MAL RESPONSE NORMALIZED
R(t), EFFECTIVE TRANSIENT THER-
**----- End of picture text -----**
**Figure 12. FET Thermal Response** **http://onsemi.com** **6** **NTGD4167C** ## **P−CHANNEL TYPICAL CHARACTERISTICS** **==> picture [496 x 586] intentionally omitted <==** **----- Start of picture text -----**
7.0 7.0
VDS = −5 V
6.0 VGS = −5.0 V to −3.5 V 6.0
5.0 5.0
−3.0 V
−2.5 V
4.0 4.0
3.0 3.0
2.0 2.0
−2.0 V
1.0 1.0 125 ° C 25 ° C
−55 ° C
−1.5 V
0 0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.75 1 1.25 1.5 1.75 2 2.25 2.5 2.75 3
−VDS, DRAIN−TO−SOURCE VOLTAGE (V) −VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 13. On−Region Characteristics Figure 14. Transfer Characteristics
0.5 0.5
0.45 TJ = 25 ° C 0.45 TJ = 25 ° C
0.4 0.4
0.35 0.35
VGS = −2.5 V
0.3 0.3
0.25 0.25
0.2 ID = −1.9 A 0.2
0.15 0.15 VGS = −4.5 V
0.1 0.1
0.05 0.05
0 0
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0
−VGS, GATE VOLTAGE (V) −ID, DRAIN CURRENT (A)
Figure 15. On−Region vs. Gate−To−Source Figure 16. On−Resistance vs. Drain Current
Voltage and Temperature
1.6 550
1.51.4 VIDGS = −1.9 A = −4.5 V 500450 CISS Tf = 1 MHzVJGS = 25 = 0 V ° C
400
1.3
350
1.2
300
1.1
250
1.0
200
0.9
150
0.8 100
COSS
0.7 50 CRSS
0.6 0
−50 −25 0 25 50 75 100 125 150 0 5 10 15 20 25 30
TJ, JUNCTION TEMPERATURE ( ° C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V)
, DRAIN CURRENT (A)
, DRAIN CURRENT (A) D
D −I
−I
) �
) �
TANCE (
, DRAIN−TO−SOURCE RESIS-
, DRAIN−TO−SOURCE RESISTANCE (
DS(on)
R
DS(on)
R
C, CAPACITANCE (pF)
, DRAIN−TO−SOURCE RESISTANCE
DS(on)
R
**----- End of picture text -----**
**==> picture [172 x 20] intentionally omitted <==** **----- Start of picture text -----**
Figure 17. On−Resistance Variation with
Temperature
**----- End of picture text -----**
**Figure 18. Capacitance Variation** **http://onsemi.com** **7** **NTGD4167C** **==> picture [256 x 176] intentionally omitted <==** **----- Start of picture text -----**
5 16
Q T
14
4
12
−VGS
−VDS
10
3
8
Q GS Q GD
2
6
ID = −2.0 A
1 TJ = 25 ° C 4
VDS = −15 V 2
0 0
0 1 2 3 4
QG, TOTAL GATE CHARGE (nC)
−V
DS
, GATE−TO−SOURCE VOLTAGE (V)
GS
−V
, DRAIN−TO−SOURCE VOLTAGE (V)
**----- End of picture text -----**
**Figure 19. Gate−to−Source and** **Drain−to−Source Voltage versus Total Charge** **==> picture [490 x 181] intentionally omitted <==** **----- Start of picture text -----**
10 1.4
1.3 ID = −250 � A
TJ = 150 ° C 1.2
1.1
1.0
1.0 TJ = 25 ° C 0.9
0.8
0.7
0.6
0.5
0.1 0.4
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 −50 −25 0 25 50 75 100 125 150
−VSD, SOURCE−TO−DRAIN VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( ° C)
(V)
GS(th)
−V
, SOURCE CURRENT (A)
S
−I
**----- End of picture text -----**
**Figure 20. Diode Forward Voltage versus Current** **Figure 21. Threshold Voltage** **==> picture [492 x 199] intentionally omitted <==** **----- Start of picture text -----**
40 100
VGS = −12 V
Single Pulse
TA = 25 ° C
30 10
100 � s
20 1 1 ms
10 ms
10 0.1
RDS(on) Limit
Thermal Limit
dc
Package Limit
0 0.01
0.001 0.01 0.1 1 10 100 1000 0.1 1 10 100
SINGLE PULSE TIME (s) −VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 22. Single Pulse Maximum Power Figure 23. Maximum Rated Forward Biased
Dissipation Safe Operating Area
POWER (W)
, DRAIN CURRENT (A)
D
−I
**----- End of picture text -----**
**http://onsemi.com** **8** **NTGD4167C** **==> picture [493 x 176] intentionally omitted <==** **----- Start of picture text -----**
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01 Single Pulse
0.01
0.0001 0.001 0.01 0.1 1 10 100 1000
t, TIME (s)
MAL RESPONSE NORMALIZED
R(t), EFFECTIVE TRANSIENT THER-
**----- End of picture text -----**
**Figure 24. FET Thermal Response** ## **ORDERING INFORMATION** |**ORDERING INFORMATION**||| |---|---|---| |**Device**|**Package**|**Shipping**†| |NTGD4167CT1G|TSOP6
(Pb−Free)|3000 / Tape & Reel| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. **http://onsemi.com** **9** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [479 x 542] intentionally omitted <==** **----- Start of picture text -----**
TSOP−6
CASE 318G−02
gd
ISSUE V
1
DATE 12 JUN 2012
SCALE 2:1
D NOTES:1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
H 2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM
LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.
6 5 4 L2 4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
GAUGE PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR
E1 ÉÉ E PLANE GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSIONS D
AND E1 ARE DETERMINED AT DATUM H.
ÉÉ 1 2 3 L 5. PIN ONE INDICATOR MUST BE LOCATED IN THE INDICATED ZONE.
NOTE 5 b M C PLANESEATING DIM MIN MILLIMETERSNOM MAX
DETAIL Z A 0.90 1.00 1.10
i e A1 0.01 0.06 0.10
b 0.25 0.38 0.50
c 0.10 0.18 0.26
D 2.90 3.00 3.10
A c E 2.50 2.75 3.00
0.05 E1 1.30 1.50 1.70
e 0.85 0.95 1.05
A1 L 0.20 0.40 0.60
DETAIL Z L2M 0° 0.25 BSC− 1 0°
STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5: STYLE 6:
PIN 1. DRAIN PIN 1. EMITTER 2 PIN 1. ENABLE PIN 1. N/C PIN 1. EMITTER 2 PIN 1. COLLECTOR
2. DRAIN 2. BASE 1 2. N/C 2. V in 2. BASE 2 2. COLLECTOR
3. GATE 3. COLLECTOR 1 3. R BOOST 3. NOT USED 3. COLLECTOR 1 3. BASE
4. SOURCE 4. EMITTER 1 4. Vz 4. GROUND 4. EMITTER 1 4. EMITTER
5. DRAIN 5. BASE 2 5. V in 5. ENABLE 5. BASE 1 5. COLLECTOR
6. DRAIN 6. COLLECTOR 2 6. V out 6. LOAD 6. COLLECTOR 2 6. COLLECTOR
STYLE 7: STYLE 8: STYLE 9: STYLE 10: STYLE 11: STYLE 12:
PIN 1. COLLECTOR PIN 1. Vbus PIN 1. LOW VOLTAGE GATE PIN 1. D(OUT)+ PIN 1. SOURCE 1 PIN 1. I/O
2. COLLECTOR 2. D(in) 2. DRAIN 2. GND 2. DRAIN 2 2. GROUND
3. BASE 3. D(in)+ 3. SOURCE 3. D(OUT)− 3. DRAIN 2 3. I/O
4. N/C 4. D(out)+ 4. DRAIN 4. D(IN)− 4. SOURCE 2 4. I/O
5. COLLECTOR 5. D(out) 5. DRAIN 5. VBUS 5. GATE 1 5. VCC
6. EMITTER 6. GND 6. HIGH VOLTAGE GATE 6. D(IN)+ 6. DRAIN 1/GATE 2 6. I/O
STYLE 13: STYLE 14: STYLE 15: STYLE 16: STYLE 17:
PIN 1. GATE 1 PIN 1. ANODE PIN 1. ANODE PIN 1. ANODE/CATHODE PIN 1. EMITTER
2. SOURCE 2 2. SOURCE 2. SOURCE 2. BASE 2. BASE
3. GATE 2 3. GATE 3. GATE 3. EMITTER 3. ANODE/CATHODE
4. DRAIN 2 4. CATHODE/DRAIN 4. DRAIN 4. COLLECTOR 4. ANODE
5. SOURCE 1 5. CATHODE/DRAIN 5. N/C 5. ANODE 5. CATHODE
6. DRAIN 1 6. CATHODE/DRAIN 6. CATHODE 6. CATHODE 6. COLLECTOR
GENERIC
RECOMMENDED
MARKING DIAGRAM*
SOLDERING FOOTPRINT*
6X
0.60
XXXAYW XXX M
roo 1 1
3.20 6X
0.95 IC STANDARD
XXX = Specific Device Code XXX = Specific Device Code
A =Assembly Location M = Date Code
Loom Y = Year | = Pb−Free Package
0.95 W = Work Week
PITCH
= Pb−Free Package
DIMENSIONS: MILLIMETERS
**----- End of picture text -----**
*For additional information on our Pb−Free strategy and soldering *This information is generic. Please refer to device data sheet details, please download the ON Semiconductor Soldering and for actual part marking. Pb−Free indicator, “G” or microdot “ Mounting Techniques Reference Manual, SOLDERRM/D. ”, may or may not be present. Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB14888C** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DESCRIPTION: TSOP−6 PAGE 1 OF 1** ~~Be~~ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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