# Power MOSFET, P Channel, 30 V, 5 A, 0.1 ohm, SOT-223, Surface Mount ![Product image](https://novapart.co/image/farnell:1453638/) **URL**: https://novapart.co/products/NTF5P03T3G/power-mosfet-p-channel-30-v-5-a-01-ohm-sot-223 **SKU**: NTF5P03T3G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.2460 **Stock**: 10+ **Lead Time**: 141 days (indicative) ## Description Transistor Polarity:P Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:-1.75V; Power Dissi ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 4Pins | | Channel Type | P Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 3.13W | | Transistor Mounting | Surface Mount | | Rds(On) Test Voltage | 10V | | Transistor Case Style | SOT-223 | | Drain Source Voltage Vds | 30V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 5A | | Drain Source On State Resistance | 0.1ohm | | Gate Source Threshold Voltage Max | 1.75V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:1453638/) NTF5P03, NVF5P03 ## Power MOSFET -5.2 A, -30 V ## **P−Channel SOT−223** ## **Features** - Ultra Low R DS(on) - Higher Efficiency Extending Battery Life - Logic Level Gate Drive ## **http://onsemi.com** ## **−5.2 AMPERES, −30 VOLTS R = 100 m DS(on)** - Miniature SOT−223 Surface Mount Package - Avalanche Energy Specified - AEC−Q101 Qualified and PPAP Capable − NVF5P03T3G - These Devices are Pb−Free and are RoHS Compliant ## **Applications** - DC−DC Converters - Power Management - Motor Controls **==> picture [68 x 87] intentionally omitted <==** **----- Start of picture text -----**
S
G
D
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P−Channel MOSFET
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- Inductive Loads - Replaces MMFT5P03HD **==> picture [213 x 130] intentionally omitted <==** **----- Start of picture text -----**
MARKING
DIAGRAM
4 & PIN
ASSIGNMENT
1 Drain
2
3 4
SOT−223
AYM
CASE 318E 5P03
STYLE 3
S
1 2 3
Gate Drain Source
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A = Assembly Location Y = Year M = Date Code 5P03 = Specific Device Code = Pb−Free Package (Note: Microdot may be in either location) ## **ORDERING INFORMATION** |**Device**|**Package**|**Shipping**†| |---|---|---| |NTF5P03T3G|SOT−223
(Pb−Free)|4000 / Tape &
Reel| |NVF5P03T3G|SOT−223
(Pb−Free)|4000 / Tape &
Reel| - †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: **NTF5P03T3/D** **1** © Semiconductor Components Industries, LLC, 2013 **August, 2013 − Rev. 6** ## **NTF5P03, NVF5P03** ## **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) **Negative sign for P−Channel devices omitted for clarity** |**Negative sign for P−Channel devices omitted for clarity**|**Negative sign for P−Channel devices omitted for clarity**|||| |---|---|---|---|---| |**Rating**||**Symbol**|**Max**|**Unit**| |Drain−to−Source Voltage||VDSS|−30|V| |Drain−to−Gate Voltage (RGS= 1.0 M�)||VDGR|−30|V| |Gate−to−Source Voltage − Continuous||VGS|±20|V| |1 sq in
FR−4 or G−10 PCB
10 seconds|Thermal Resistance − Junction to Ambient
Total Power Dissipation @ TA= 25°C
Linear Derating Factor
Drain Current − Continuous @ TA= 25°C
Continuous @ TA= 70°C
Pulsed Drain Current (Note 1)|RTHJA
PD
ID
ID
IDM|40
3.13
25
−5.2
−4.1
−26|°C/W
Watts
mW/°C
A
A
A| |Minimum
FR−4 or G−10 PCB
10 seconds|Thermal Resistance − Junction to Ambient
Total Power Dissipation @ TA= 25°C
Linear Derating Factor
Drain Current − Continuous @ TA= 25°C
Continuous @ TA= 70°C
Pulsed Drain Current (Note 1)|RTHJA
PD
ID
ID
IDM|80
1.56
12.5
−3.7
−2.9
−19|°C/W
Watts
mW/°C
A
A
A| |Operating and Storage Temperature Range||TJ, Tstg|−55 to 150|°C| |Single Pulse Drain−to−Source Avalanche Energy − Starting TJ= 25°C
(VDD= −30 Vdc, VGS= −10 Vdc, Peak IL= −12 Apk, L = 3.5 mH, RG= 25�)||EAS|250|mJ| Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Repetitive rating; pulse width limited by maximum junction temperature. **http://onsemi.com** **2** **NTF5P03, NVF5P03** ## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted|)||||| |---|---|---|---|---|---|---| |**Characteristic**||**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**||||||| |Drain−to−Source Breakdown Voltage (Cpk≥ 2.0) (Notes 2 and 4)
(VGS= 0 Vdc, ID= −250�Adc)
Temperature Coefficient (Positive)||V(BR)DSS|−30
−|−
−28|−
−|Vdc
mV/°C| |Zero Gate Voltage Drain Current
(VDS= −24 Vdc, VGS= 0 Vdc)
(VDS= −24 Vdc, VGS= 0 Vdc, TJ= 125°C)||IDSS|−
−|−
−|−1.0
−25|�Adc| |Gate−Body Leakage Current
(VGS=± 20 Vdc, VDS= 0 Vdc)||IGSS|−|−|±100|nAdc| |**ON CHARACTERISTICS** (Note 2)||||||| |Gate Threshold Voltage (Cpk≥ 2.0) (Notes 2 and 4)
(VDS= VGS, ID= −250�Adc)
Threshold Temperature Coefficient (Negative)||VGS(th)|−1.0
−|−1.75
3.5|−3.0
−|Vdc
mV/°C| |Static Drain−to−Source On−Resistance (Cpk≥ 2.0) (Notes 2 and 4)
(VGS= −10 Vdc, ID= −5.2 Adc)
(VGS= −4.5 Vdc, ID= −2.6Adc)||RDS(on)|−|76
107|100
150|m�| |Forward Transconductance (Note 2)
(VDS= −15 Vdc, ID= −2.0 Adc)||gfs|2.0|3.9|−|Mhos| |**DYNAMIC CHARACTERISTICS**||||||| |Input Capacitance|(VDS= −25 Vdc, VGS= 0 V,
f = 1.0 MHz)|Ciss|−|500|950|pF| |Output Capacitance||Coss|−|153|440|| |Transfer Capacitance||Crss|−|58|140|| |**SWITCHING CHARACTERISTICS**(Note 3)||||||| |Turn−On Delay Time|(VDD= −15 Vdc, ID= −4.0 Adc,
VGS= −10 Vdc,
RG= 6.0�) (Note 2)|td(on)|−|10|24|ns| |Rise Time||tr|−|33|48|| |Turn−Off Delay Time||td(off)|−|38|94|| |Fall Time||tf|−|20|92|| |Turn−On Delay Time|(VDD= −15 Vdc, ID= −2.0 Adc,
VGS= −10 Vdc,
RG= 6.0�) (Note 2)|td(on)|−|16|38|ns| |Rise Time||tr|−|45|110|| |Turn−Off Delay Time||td(off)|−|23|60|| |Fall Time||tf|−|24|80|| |Gate Charge|(VDS= −24 Vdc, ID= −4.0 Adc,
VGS= −10 Vdc) (Note 2)|QT|−|15|38|nC| |||Q1|−|1.6|−|| |||Q2|−|3.5|−|| |||Q3|−|2.6|−|| |**SOURCE−DRAIN DIODE CHARACTERISTICS**||||||| |Forward On−Voltage|(IS= −4.0 Adc, VGS= 0 Vdc)
(IS= −4.0 Adc, VGS= 0 Vdc,
TJ= 125°C) (Note 2)|VSD|−
−|−1.1
−0.89|−1.5
−|Vdc| |Reverse Recovery Time|(IS= −4.0 Adc, VGS= 0 Vdc,
dIS/dt = 100 A/�s) (Note 2)|trr|−|34|−|ns| |||ta|−|20|−|| |||tb|−|14|−|| |Reverse Recovery Stored Charge||QRR|−|0.036|−|�C| 2. Pulse Test: Pulse Width ≤ 300 � s, Duty Cycle ≤ 2.0%. 3. Switching characteristics are independent of operating junction temperatures. 4. Reflects typical values. Cpk � �[Max limit] 3 � SIGMA[ �][T][yp] � **http://onsemi.com** **3** **NTF5P03, NVF5P03** ## **TYPICAL ELECTRICAL CHARACTERISTICS** **==> picture [491 x 627] intentionally omitted <==** **----- Start of picture text -----**
5 10
−6 V −3.9 V −3.7 V T J = 25 ° C 9 VDS ≥ −10 V
−8 V
4 −4.1 V 8
−10 V
−4.3 V −3.5 V 7
3 6
−4.5 V −3.1 V
5
2 4
−2.8 V
3 TJ = 25 ° C
1 2
V GS = −2.7 V 1 TJ = 100 ° C
TJ = −55 ° C
0 0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2 2.5 3 3.5 4 4.5 5
−VDS, DRAIN−TO−SOURCE VOLTAGE (V) −VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
0.200 0.200
0.175 ITDJ = −5.2 A = 25 ° C 0.1800.160 TJ = 25 ° C
0.150 0.140
0.120 VGS = −4.5 V
0.125
0.100
0.100 0.080 VGS = −10 V
0.075 0.060
0.040
0.050
0.020
0.025 0.000
3 4 5 6 7 8 9 10 1 2.5 4 5.5 7 8.5 10
−VGS, GATE−TO−SOURCE VOLTAGE (V) −ID, DRAIN CURRENT (A)
Figure 3. On−Resistance versus Figure 4. On−Resistance versus Drain Current
Gate−to−Source Voltage and Gate Voltage
1.65 1000
1.55 ID = −5.2 A VGS = 0 V
1.45 VGS = −10 V
1.35
1.25
TJ = 125 ° C
1.15 100
1.05
0.95
0.85 TJ = 100 ° C
0.75
0.65 10
−50 −25 0 25 50 75 100 125 150 5 10 15 20 25 30
TJ, JUNCTION TEMPERATURE ( ° C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current
Temperature versus Voltage
DRAIN CURRENT (A) DRAIN CURRENT (A)
D, D,
−I −I
) � ) �
DRAIN−TO−SOURCE RESISTANCE ( DRAIN−TO−SOURCE RESISTANCE (
DS(on), DS(on),
R R
, LEAKAGE (nA)
DSS
(NORMALIZED) −I
DRAIN−TO−SOURCE RESISTANCE
DS(on),
R
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**http://onsemi.com** **4** **NTF5P03, NVF5P03** ## **TYPICAL ELECTRICAL CHARACTERISTICS** **==> picture [247 x 171] intentionally omitted <==** **----- Start of picture text -----**
1000
900 TJ = 25J = 25 = 25 ° C
VGS = 0 VGS = 0 V = 0 V
800
700
600
Cississ
500
400
300
200 Cossoss
100 Crssrss
0
0 5 10 15 20 25 30
DRAIN−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
**----- End of picture text -----**
**==> picture [494 x 614] intentionally omitted <==** **----- Start of picture text -----**
12.5 25
TJ = 25J = 25 = 25 ° C
900 VGS = 0 VGS = 0 V = 0 V −VDS QT
800 10
20
700
600 7.5 15
Cississ −VGS
500
400 5.0 Q 1 Q 2 10
300
200 Cossoss 2.5 ITDJ = −2 A = 25 ° C 5
100 Crssrss
0 0 0
0 5 10 15 20 25 30 0 10 20 30 40 50 60
DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
1000 4.00
I V D DD = −4.0 A = −15 V 3.50 T VJGS = 25 = 0 V ° C
V GS = −10 V
3.00
td(off)
2.50
2.00
tf
100
1.50
tr
1.00
0.50
td(on)
10 0.00
1 10 100 0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1
RG, GATE RESISTANCE ( � ) −VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage versus Current
versus Gate Resistance
100 250
VGS = 20 V ID = −6 A
SINGLE PULSE
TC = 25 ° C 200
10
150
dc
1
10 ms 100
1 ms
100 � s
0.1
50
RDS(on) LIMIT 10 � s
THERMAL LIMIT
PACKAGE LIMIT
0.01 0
0.1 1 10 100 25 50 75 100 125 150
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE ( ° C)
Mounted on 2”sq. FR4 board (1”sq. 2 oz. Cu 0.06” thick
single sided) with on die operating, 10 s max.
C, CAPACITANCE (pF)
, GATE−TO−SOURCE VOLTAGE (V) , DRAIN−TO−SOURCE VOLTAGE (V)
GS DS
−V −V
t, TIME (ns)
, SOURCE CURRENT (A)
S
−I
, DRAIN CURRENT (AMPS)
D AVALANCHE ENERGY (mJ)
−I
, SINGLE PULSE DRAIN−TO−SOURCE
AS
E
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**Figure 11. Maximum Rated Forward Biased Safe Operating Area** **Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature** **http://onsemi.com** **5** **NTF5P03, NVF5P03** ## **TYPICAL ELECTRICAL CHARACTERISTICS** **==> picture [474 x 168] intentionally omitted <==** **----- Start of picture text -----**
1
D = 0.5
0.2
0.1 NORMALIZED TO R � JA AT STEADY STATE (1 ″ PAD)
0.1 0.05
0.0175 � 0.0710 � 0.2706 � 0.5779 � 0.7086 �
0.02 CHIP
JUNCTION
0.0154 F 0.0854 F 0.3074 F 1.7891 F 107.55 F
0.01
AMBIENT
SINGLE PULSE
0.01
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
t, TIME (s)
, EFFECTIVE TRANSIENT
THERMAL RESPONSE
THJA(t)
R
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**Figure 13. FET Thermal Response** **http://onsemi.com** **6** **NTF5P03, NVF5P03** ## **PACKAGE DIMENSIONS** **SOT−223 (TO−261)** CASE 318E−04 ISSUE N **==> picture [473 x 415] intentionally omitted <==** **----- Start of picture text -----**
D
b1 NOTES:
DIMENSIONING AND TOLERANCING PER ASME Y14.5M,
1994.
CONTROLLING DIMENSION: INCH.
an 4 MILLIMETERS INCHES
HE ir E -—___ DIMA 1.50 MIN NOM 1.63 MAX 1.75 0.060 MIN 0.064 NOM 0.068 MAX
1 2 3 A1 0.02 0.06 0.10 0.001 0.002 0.004
b 0.60 0.75 0.89 0.024 0.030 0.035
b1 2.90 3.06 3.20 0.115 0.121 0.126
c 0.24 0.29 0.35 0.009 0.012 0.014
b D 6.30 6.50 6.70 0.249 0.256 0.263
e1 Ee 3.302.20 3.502.30 3.702.40 0.1300.087 0.1380.091 0.1450.094
fa e e1 0.85 0.94 1.05 0.033 0.037 0.041
L 0.20 −−− −−− 0.008 −−− −−−
C L1 1.50 1.75 2.00 0.060 0.069 0.078
Lo aan H E 6.70 7.00 7.30 0.264 0.276 0.287
A 0° − 1 0° 0° − 1 0°
0.08 (0003) STYLE 3:
ts A1 L gS L1 SSSSSE PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT
3.8
0.15
__ ro
2.0
0.079
aoe
6.3
2.3 2.3
0.248
0.091 0.091
2.0
0.079
arenes
1.5 SCALE 6:1 mm
— {— | — inches
0.059
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