# Power MOSFET, N Channel, 150 V, 50 A, 0.0118 ohm, TO-252 (DPAK), Surface Mount ![Product image](https://novapart.co/image/farnell:3528501/) **URL**: https://novapart.co/products/NTDS015N15MCT4G/power-mosfet-n-channel-150-v-50-a-00118-ohm-to-252 **SKU**: NTDS015N15MCT4G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.6640 **Stock**: 1000+ **Lead Time**: 2 days (indicative) ## Description Available until stocks are exhausted Alternative available ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (15-Jan-2018) | | No. Of Pins | 3Pins | | Channel Type | N Channel | | Product Range | PowerTrench | | Qualification | - | | Power Dissipation | 83W | | Transistor Mounting | Surface Mount | | Rds(On) Test Voltage | 10V | | Transistor Case Style | TO-252 (DPAK) | | Drain Source Voltage Vds | 150V | | Operating Temperature Max | 175°C | | Continuous Drain Current Id | 50A | | Drain Source On State Resistance | 0.0118ohm | | Gate Source Threshold Voltage Max | 4.5V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3528501/) ## MOSFET - N-Channel Shielded Gate PowerTrench 150 V, 15 m 50 A ## NTDS015N15MC ## **Features** - Shielded Gate MOSFET Technology **www.onsemi.com** - Max RDS(on) = 15 m | at VGS = 10 V, ID = 29 A - Low R to Minimize Conduction Losses DS(on) **==> picture [192 x 158] intentionally omitted <==** **----- Start of picture text -----**
V(BR)DSS RDS(ON) MAX ID MAX
150 V 15 m @ 10 V 50 A
———eeee ee
D
G
S
N−CHANNEL MOSFET
**----- End of picture text -----**
- Low Capacitance to Minimize Driver Losses - Optimized Gate Charge to Minimize Switching Losses - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ## **Typical Applications** - Primary Side for 48 V Isolated Bus - SR for MV Secondary Applications **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) ~~ee~~ **Parameter Symbol** ~~en Ge~~ **Value Unit** S Drain−to−Source Voltage VDSS 150 V **N−CHANNEL MOSFET** Gate−to−Source Voltage VGS ± 20 V Continuous Drain ID 50 A Current R JC **MARKING** (Note 2) SteadyState TC = 25 ° C **DIAGRAM** Power Dissipation PD 83 W 4 R JC (Note 2) Drain ~~P|7 EEEPf~~ 4 Continuous Drain ID 11 A Current R JA AYWW (Notes 1, 2) SteadyState TA = 25 ° C 1[2] 3 015 Power Dissipation PD 3.8 W **DPAK** N15MCG ~~P|ne~~ R JA (Notes 1, 2) ~~nnn~~ **CASE 369C** 1 3 ~~es~~ Pulsed Drain Current TC = 25 ° ~~ee~~ C, tp = 100 s IDM ~~GG~~ 246 A Gate 2 Source Operating Junction and Storage Temperature TJ, Tstg −55 to ° C Drain Range +175 015N15MCG = Specific Device Code ~~Po~~ A = Assembly Location Single Pulse Drain−to−Source Avalanche EAS 150 mJ Y = Year ~~Po~~ Energy (IL = 10 Apk, L = 3 mH) WW = Work Week Lead Temperature for Soldering Purposes TL 260 ° C (1/8 ″ from case for 10 s) ~~Po~~ Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ## **ORDERING INFORMATION** |**Device**|**Package**|**Shipping**†| |---|---|---| |NTDS015N15MCT4G|DPAK
(Pb−Free)|2500 / Tube| 1. Surface−mounted on FR4 board using a 1 in[2] , 2 oz. Cu pad. 2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. - †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: **NTDS015N15MC/D** **1** © Semiconductor Components Industries, LLC, 2018 **May, 2020 − Rev. 2** **NTDS015N15MC** ## **THERMAL RESISTANCE MAXIMUM RATINGS** |**THERMAL RESISTANCE MAXIMUM RATINGS**|**THERMAL RESISTANCE MAXIMUM RATINGS**|||||||| |---|---|---|---|---|---|---|---|---| |**Parameter**||**Symbol**|||**Value**||**Unit**|| |Junction−to−Case − Steady State (Note 2)||R�JC|||1.8||°C/W|| |Junction−to−Ambient − Steady State (Notes 1, 2)||R�JA|||40|||| |**ELECTRICAL CHARACTERISTICS**(TJ=|25°C unless|otherwise specified)||||||| |**Parameter**|**Symbol**|**Test Condition**|||**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**||||||||| |Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID= 250�A|||150|||V| |Drain−to−Source Breakdown Voltage
Temperature Coefficient|V(BR)DSS/
TJ|ID= 250�A, ref to 25°C||||83||mV/°C| |Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,
VDS= 120 V|TJ= 25°C||||1.0|�A| |Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS=±20 V|||||±100|nA| |**ON CHARACTERISTICS**||||||||| |Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= 162�A|||2.5||4.5|V| |Negative Threshold Temperature Coefficient|VGS(TH)/TJ|ID= 162�A, ref to 25°C||||−8.2||mV/°C| |Drain−to−Source On Resistance|RDS(on)|VGS= 10 V, ID= 29 A||||11.8|15|m�| |Drain−to−Source On Resistance|RDS(on)|VGS= 8 V, ID= 15 A||||12.6|16.8|m�| |Forward Transconductance|gFS|VDS= 10 V, ID= 29 A||||58||S| |**CHARGES, CAPACITANCES & GATE RESISTANCE**||||||||| |Input Capacitance|CISS|VGS= 0 V, f = 1 MHz, VDS= 75 V||||2120||pF| |Output Capacitance|COSS|||||595||| |Reverse Transfer Capacitance|CRSS|||||10.5||| |Gate−Resistance|RG|||||0.6|1.2|�| |Total Gate Charge|QG(TOT)|VGS= 10 V, VDS= 75 V; ID= 29 A||||27||nC| |Threshold Gate Charge|QG(TH)|||||7||| |Gate−to−Source Charge|QGS|||||11||| |Gate−to−Drain Charge|QGD|||||4||| |Plateau Voltage|VGP|||||5.5||V| |Output Charge|QOSS|VDD= 75 V, VGS= 0 V||||66||nC| |**SWITCHING CHARACTERISTICS**(Note 3)||||||||| |Turn−On Delay Time|td(ON)|VGS= 10 V, VDD= 75 V,
ID= 29 A, RG= 6�||||16||ns| |Rise Time|tr|||||5||| |Turn−Off Delay Time|td(OFF)|||||21||| |Fall Time|tf|||||4||| |**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||||| |Forward Diode Voltage|VSD|VGS= 0 V,
IS= 29 A|TJ= 25°C|||0.89|1.2|V| |Reverse Recovery Time|tRR|VGS= 0 V, VDD= 75 V
dIS/dt = 300 A/�s, IS= 29 A||||49||ns| |Reverse Recovery Charge|QRR|||||197||nC| |Reverse Recovery Time|tRR|VGS= 0 V, VDD= 75 V
dIS/dt = 1000 A/�s, IS= 29 A||||34||ns| |Reverse Recovery Charge|QRR|||||345||nC| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Switching characteristics are independent of operating junction temperatures. **www.onsemi.com** **2** **NTDS015N15MC** ## **TYPICAL CHARACTERISTICS** **==> picture [491 x 591] intentionally omitted <==** **----- Start of picture text -----**
120 5
10 V 7.0 V VGS = 5.5 V 6 V
8.0 V
4
90
6.0 V
3
60 8 V
VGS = 5.5 V 2 7 V
30
1 10 V
Pulse Duration = 250 � s
Duty Cycle = 0.5% Max
0 0
0 1 2 3 4 5 6 7 8 9 10 0 30 60 90 120
VDS, DRAIN−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 1. On−Region Characteristics Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
2.4 60
2.2 ID = 29 A ID = 29 A
2.0 VGS = 10 V
45
1.8
1.6
1.4 30 TJ = 150 ° C
1.2
15
1.0
TJ = 25 ° C
0.8
0.6 0
−75 −50 −25 0 25 50 75 100 125 150 175 4 5 6 7 8 9 10
TJ, JUNCTION TEMPERATURE ( ° C) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. Normalized On−Resistance vs. Figure 4. On−Resistance vs. Gate−to−Source
Junction Temperature Voltage
120 200
VDS = 10 V 100 VGS = 0 V
90 10
1
60
TJ = 25 ° C 0.1
30 TJ = 175 ° C
0.01
TJ = 175 ° C TJ = −55 ° C TJ = 25 ° C TJ = −55 ° C
0 0.001
2 3 4 5 6 7 8 0 0.2 0.4 0.6 0.8 1.0 1.2
VGS, GATE−TO−SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)
, DRAIN CURRENT (A) , NORMALIZED DRAIN−TO−
ID
SOURCE ON−RESISTANCE
DS(on)
R
) �
, NORMALIZED DRAIN−TO− , ON−RESISTANCE (m
SOURCE ON−RESISTANCE
DS(on) DS(on)
R R
, DRAIN CURRENT (A)
ID
, REVERSE DRAIN CURRENT (A)
IS
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**Figure 5. Transfer Characteristics** **Figure 6. Source−to−Drain Diode Forward Voltage vs. Source Current** **www.onsemi.com** **3** **NTDS015N15MC** ## **TYPICAL CHARACTERISTICS** **==> picture [491 x 592] intentionally omitted <==** **----- Start of picture text -----**
10 10K
ID = 29 A VDD = 25 V
CISS
8 V DD = 50 V VDD = 75 V
1K COSS
6
100
4
C RSS
10
2 f = 1 MHz
VGS = 0 V
0 1
0 6 12 18 24 30 0.1 1 10 100 150
Qg, GATE CHARGE (nC) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs. Drain−to−Source
Voltage
60 100K
VGS = 10 V
45 10K
VGS = 8 V
30 1K
15 100
R � JC = 1.8 ° C/W
0 10
25 50 75 100 125 150 175 0.00001 0.0001 0.001 0.01 0.1 1
TC, CASE TEMPERATURE ( ° C) t, PULSE WIDTH (s)
Figure 9. Drain Current vs. Case Temperature Figure 10. Peak Power
100 1000
100 10 � s
100 � s
10
TJ(initial) = 25 ° C
10
TJ(initial) = 150 ° C TJ(initial) = 100 ° C 1 T C = 25 ° C 10 ms 1 ms
Single Pulse
R � JC = 1.8 ° C/W
0.1 RDS(on) Limit
Thermal Limit 100 ms/DC
Package Limit
1 0.01
0.001 0.01 0.1 1 10 100 0.1 1 10 100 200
tAV, TIME IN AVALANCHE (mS) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
CAPACITANCE (pF)
, GATE−TO−SOURCE VOLTAGE (V)
GS
V
, DRAIN CURRENT (A)
ID
PEAK TRANSIENT POWER (W)
, DRAIN CURRENT (A)
, AVALANCHE CURRENT(A) ID
IAS
**----- End of picture text -----**
**Figure 11. Unclamped Inductive Switching Capability** **Figure 12. Forward Bias Safe Operating Area** **www.onsemi.com** **4** **NTDS015N15MC** ## **TYPICAL CHARACTERISTICS** **==> picture [491 x 173] intentionally omitted <==** **----- Start of picture text -----**
10
Duty Cycle = 0.5
1
0.2
0.1
0.05
0.1
0.02
0.01 P DM
Notes:
0.01 Single Pulse R � JC = 1.8 ° C/W
t1 Peak TJ = PDM x Z � JC (t) + TC
t 2 Duty Cycle, D = t1/t2
0.001
0.00001 0.0001 0.001 0.01 0.1 1
t, RECTANGULAR PULSE DURATION (sec)
C/W)
°
RESISTANCE (
, EFFECTIVE TRANSIENT THERMAL
JC
�
Z
**----- End of picture text -----**
**Figure 13. Transient Thermal Impedance** **www.onsemi.com** **5** **NTDS015N15MC** ## **PACKAGE DIMENSIONS** **DPAK (SINGLE GAUGE)** CASE 369C ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. **==> picture [352 x 417] intentionally omitted <==** **----- Start of picture text -----**
A 1.
E C 2.
A 3.
b3 B c2 4.
4
L3 bale HE, Z 5.
D
DETAIL A H
6.
1 2 3
7.
L4 NOTE 7 DIM
b2 c BOTTOM VIEW A
e SIDE VIEW A1
b b
TOP VIEW 0.005 (0.13) M C b2b3b3
c
c2
H Z Z D
E
e
L2 [GAUGE] PLANE C SEATINGPLANE H
L
L1
L2
L L3
A1 BOTTOM VIEW L4
pee L1 s Sa t ALTERNATE
CONSTRUCTIONS Z
DETAIL A
ROTATED 9 CW
SOLDERING FOOTPRINT*
6.20 3.00
0.244 0.118
2.58
0.102
5.80
1.60 6.17
0.228
0.063 0.243
Te
SCALE 3:1 mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
**----- End of picture text -----**
2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. **==> picture [151 x 172] intentionally omitted <==** **----- Start of picture text -----**
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
7. OPTIONAL MOLD FEATURE.
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.086 0.094 2.18 2.38
A1 0.000 0.005 0.00 0.13
b 0.025 0.035 0.63 0.89
b2b3b3 0.0280.180 0.0450.215 0.724.57 1.145.46
c 0.018 0.024 0.46 0.61
c2 0.018 0.024 0.46 0.61
D 0.235 0.245 5.97 6.22
E 0.250 0.265 6.35 6.73
e 0.090 BSC 2.29 BSC
H 0.370 0.410 9.40 10.41
L 0.055 0.070 1.40 1.78
L1 0.114 REF 2.90 REF
L2 0.020 BSC 0.51 BSC
L3 0.035 0.050 0.89 1.27
L4 −−− 0.040 −−− 1.01
Z 0.155 −−− 3.93 −−−
**----- End of picture text -----**
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