# Power MOSFET, N Channel, 100 V, 19 A, 0.074 ohm, TO-252 (DPAK), Surface Mount ![Product image](https://novapart.co/image/farnell:1879967/) **URL**: https://novapart.co/products/NTD6416ANLT4G/power-mosfet-n-channel-100-v-19-a-0074-ohm-to-252 **SKU**: NTD6416ANLT4G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.4900 **Stock**: 1000+ **Lead Time**: 141 days (indicative) ## Description Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.068ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 3Pins | | Channel Type | N Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 71W | | Transistor Mounting | Surface Mount | | Rds(On) Test Voltage | 10V | | Transistor Case Style | TO-252 (DPAK) | | Drain Source Voltage Vds | 100V | | Operating Temperature Max | 175°C | | Continuous Drain Current Id | 19A | | Drain Source On State Resistance | 0.074ohm | | Gate Source Threshold Voltage Max | 2.2V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:1879967/) NTD6416ANL, NVD6416ANL ## N-Channel Power MOSFET 100 V, 19 A, 74 m ## **Features** - Low RDS(on) |• Low RDS(on)DS(on)||||| |---|---|---|---|---| |• High Current Capability|||**www.**
**onsemi.com**|| |• 100% Avalanche Tested||||| |• NVD Prefix for Automotive and Other Applications Requiring|||**V(BR)DSS**
**RDS(on) MAX**
**ID MAX**|| |Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant||100 V
74 m @ 10 V
19 A
FP ~~fe |~~||| |**MAXIMUM RATINGS**(TJ= 25°C unless otherwise noted)
**Parameter**
**Symbol**
**Value**
**Unit**
Drain−to−Source Voltage
VDSS
100
V
Gate−to−Source Voltage − Continuous
VGS
±20
V
Continuous Drain
Current
Steady
State
TC= 25°C
ID
19
A
TC= 100°C
13
Power Dissipation
Steady
State
TC= 25°C
PD
71
W
Pulsed Drain Current
tp= 10 s
IDM
70
A
Operating and Storage Temperature Range
TJ, Tstg
−55 to
+175
°C
Source Current (Body Diode)
IS
19
A
Single Pulse Drain−to−Source Avalanche
Energy (VDD= 50 Vdc, VGS= 10 Vdc,
IL(pk)= 18.2 A, L = 0.3 mH, RG= 25 )
EAS
50
mJ
Lead Temperature for Soldering
TL
260
°C
~~a~~
~~——~~
~~a ee~~
~~ee~~
~~ToT~~
~~a~~
~~ee~~
~~ee eee~~
~~ee~~
~~Pe~~
~~|~~|||D
S
G
**MARKING DIAGRAM**
**& PIN ASSIGNMENTS**
**DPAK**
**CASE 369AA**
**STYLE 2**
4 Drain
**IPAK**
**CASE 369D**
**STYLE 2**
4 Drain
4
1
2
3
1 2
3
4
~~3~~
~~»~~
»
o~~R~~|| |Purposes, 1/8″from Case for 10 Seconds||||| |Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.|||AYWW
64
16ANLG
AYWW
64
16ANLG|| |**THERMAL RESISTANCE RATINGS**
**Parameter**
**Symbol**
**Max**
**Unit**
Junction−to−Case (Drain) − Steady State
R JC
2.1
°C/W
~~a~~|||3
Source
1
Gate
2
Drain
1
Gate
2
Drain
3
Source
TU|| |Junction−to−Ambient − Steady State (Note 1)
R JA
47|||A
= Assembly Location*|| |1. Surface mounted on FR4 board using 1 sq in pad size,|||Y
= Year|| |(Cu Area 1.127 sq in [2 oz] including traces).|||WW
= Work Week|| ||||6416ANL = Device Code|| ||||G
= Pb−Free Package|| * The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package, the front side assembly code may be blank. ## **ORDERING INFORMATION** See detailed ordering and shipping information on page 5 of this data sheet. Publication Order Number: **NTD6416ANL/D** **1** © Semiconductor Components Industries, LLC, 2016 **November, 2016 − Rev. 6** ## **NTD6416ANL, NVD6416ANL** ## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTIC**|**S**(TJ= 25°C u|nless otherwise noted)|nless otherwise noted)||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||||| |Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID= 250�A||100|||V| |Drain−to−Source Breakdown Voltage
Temperature Coefficient|V(BR)DSS/TJ||||120||mV/°C| |Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,
VDS= 100 V|TJ= 25°C|||1.0|�A| ||||TJ= 125°C|||10|| |Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS=|±20 V|||±100|nA| |**ON CHARACTERISTICS**(Note 2)|||||||| |Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= 250�A||1.0||2.2|V| |Negative Threshold Temperature
Coefficient|VGS(TH)/TJ||||5.4||mV/°C| |Drain−to−Source On−Resistance|RDS(on)|VGS= 4.5 V, ID= 10 A|||70|80|m�| |||VGS= 10 V, ID= 10 A|||62|74|| |||VGS= 10 V, ID= 19 A|||68|74|| |Forward Transconductance|gFS|VDS= 5 V, ID= 10 A|||18||S| |**CHARGES, CAPACITANCES AND GATE RESISTANCE**|||||||| |Input Capacitance|CISS|VGS= 0 V, f = 1.0 MHz, VDS= 25 V|||700|1000|pF| |Output Capacitance|COSS||||110||| |Reverse Transfer Capacitance|CRSS||||50||| |Total Gate Charge|QG(TOT)|VGS= 10 V, VDS= 80 V, ID= 19 A|||25|40|nC| |Threshold Gate Charge|QG(TH)||||0.7||| |Gate−to−Source Charge|QGS||||2.4||| |Gate−to−Drain Charge|QGD||||9.6||| |Plateau Voltage|VGP||||3.2||V| |Gate Resistance|RG||||2.4||�| |**SWITCHING CHARACTERISTICS**(Note 3)|||||||| |Turn−On Delay Time|td(on)|VGS= 10 V, VDD= 80 V,
ID= 19 A, RG= 6.1�|||7.0||ns| |Rise Time|tr||||16||| |Turn−Off Delay Time|td(off)||||35||| |Fall Time|tf||||40||| |**DRAIN−SOURCE DIODE CHARACTERISTICS**|||||||| |Forward Diode Voltage|VSD|VGS= 0 V, IS= 19 A|TJ= 25°C||0.9|1.2|V| ||||TJ= 125°C||0.72||| |Reverse Recovery Time|tRR|VGS= 0 V, dIS/dt = 100 A/�s,
IS= 19 A|||50||ns| |Charge Time|Ta||||38||| |Discharge Time|Tb||||14||| |Reverse Recovery Charge|QRR||||112||nC| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width ≤ 300 � s, Duty Cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. **www.onsemi.com** **2** **NTD6416ANL, NVD6416ANL** ## **TYPICAL CHARACTERISTICS** **==> picture [494 x 625] intentionally omitted <==** **----- Start of picture text -----**
40 40
TJ = 25 ° C VDS � 10 V
10 V
30 4.5 V 30
3.6 V
20 20
3.2 V
10 3.0 V 10 TJ = 125 ° C TJ = 25 ° C
2.8 V T J = −55 ° C
VGS = 2.4 V
0 0
0 1 2 3 4 5 0 1 2 3 4 5
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
0.11 0.080
TIDJ = 25 = 19 A ° C 0.075 TJ = 25 ° C
0.1
0.070 VGS = 4.5 V
0.09
0.065
0.08 VGS = 10 V
0.060
0.07
0.055
0.06 0.050
2 4 6 8 10 2 6 10 14 18
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 3. On−Region versus Gate−To−Source Figure 4. On−Region versus Drain Current and
Voltage Gate−To−Source Voltage
3 10000
VGS = 10 V VGS = 0 V
ID = 19 A
2.5
TJ = 150 ° C
1000
2
1.5 TJ = 125 ° C
100
1
0.5 10
−50 −25 0 25 50 75 100 125 150 175 10 20 30 40 50 60 70 80 90 10
TJ, JUNCTION TEMPERTURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with Figure 6. Drian−to−Source Leakage Current
Temperature versus Voltage
, DRAIN CURRENT (A) , DRAIN CURRENT (A)
ID ID
) � ) �
, DRAIN−TO−SOURCE RESISTANCE ( , DRAIN−TO−SOURCE RESISTANCE (
DS(on) DS(on)
R R
, LEAKAGE (nA)
(NORMALIZED) IDSS
, DRAIN−TO−SOURCE RESISTANCE
DS(on)
R
**----- End of picture text -----**
**www.onsemi.com** **3** **NTD6416ANL, NVD6416ANL** ## **TYPICAL CHARACTERISTICS** **==> picture [492 x 583] intentionally omitted <==** **----- Start of picture text -----**
10 100
1400 TJ = 25 ° C Q T
VGS = 0 V
1200 8 80
1000
6 VGS 60
800 Ciss VDS
600 4 Qgs Qgd 40
400
2 V DS = 80 V 20
2000 Crss Coss 0 TI D J = 25= 19 A ° C 0
0 10 20 30 40 50 60 70 80 90 100 0 5 10 15 20 25
VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage and
Drain−to−Source Voltage versus Total Charge
1000 20
VDS = 80 V TJ = 25 ° C
ID = 19 A V GS = 0 V
VGS = 10 V
td(off) 15
100
tf
10
tr
10
td(on) 5
1 0
1 10 100 0.5 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.0
RG, GATE RESISTANCE ( � ) VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage versus
versus Gate Resistance Current
100 50
ID = 18.2 A
10 � S
10 40
100 � S
1 mS
1 10 mS 30
VGS = 10 V dc
SINGLE PULSE
0.1 TC = 25 ° C 20
0.01 RDS(on) LIMIT 10
THERMAL LIMIT
PACKAGE LIMIT
0.001 0
0.1 1 10 100 1000 25 50 75 100 125 150 175
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
, GATE−TO−SOURCE VOLTAGE (V) , DRAIN−TO−SOURCE VOLTAGE (V)
GS DS
V V
t, TIME (ns)
, SOURCE CURRENT (A)
IS
, DRAIN CURRENT (A)
ID
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
**----- End of picture text -----**
**Figure 11. Maximum Rated Forward Biased Safe Operating Area** **Figure 12. Resistive Switching Time Variation versus Gate Resistance** **www.onsemi.com** **4** ## **NTD6416ANL, NVD6416ANL** ## **TYPICAL CHARACTERISTICS** **==> picture [489 x 172] intentionally omitted <==** **----- Start of picture text -----**
100
50% Duty Cycle
20%
10
10%
5%
2%
1
1% P(pk)
R � JA(t) = r(t) R � JA
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
0.1
t1 READ TIME AT t1
t2 TJ(pk) − TC = P(pk) R � JA(t)
SINGLE PULSE DUTY CYCLE, D = t1/t2
0.01
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t, PULSE TIME (sec)
C/W)
°
(
JA
�
R
**----- End of picture text -----**
**Figure 13. Thermal Response (NTD6416ANL DPAK PCB Cu Area 720 mm[2] PCB Cu thk 2 oz)** ## **ORDERING INFORMATION** |**ORDERING INFORMATION**||| |---|---|---| |**Device**|**Package**|**Shipping**†| |NTD6416ANLT4G|DPAK
(Pb−Free)|2500 / Tape & Reel| |NTD6416ANL−1G|IPAK
(Pb−Free)|75 Units / Rail| |NVD6416ANLT4G*|DPAK
(Pb−Free)|2500 / Tape & Reel| |NVD6416ANLT4G−VF01*|DPAK
(Pb−Free)|2500 / Tape & Reel| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. **www.onsemi.com** **5** **NTD6416ANL, NVD6416ANL** ## **PACKAGE DIMENSIONS** **DPAK (SINGLE GUAGE)** CASE 369AA ISSUE B **==> picture [466 x 371] intentionally omitted <==** **----- Start of picture text -----**
NOTES:
C 1. DIMENSIONING AND TOLERANCING PER ASME
A Y14.5M, 1994.
E A 2.3. CONTROLLING DIMENSION: INCHES.THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
b3 B c2 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
L3 4 Z 5. DIMENSIONS D AND E ARE DETERMINED AT THEOUTERMOST EXTREMES OF THE PLASTIC BODY.
1 2 3 D DETAIL A H 6. DATUMS A AND B ARE DETERMINED AT DATUMPLANE H.
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
L4 A 0.086 0.094 2.18 2.38
b2 A1 0.000 0.005 0.00 0.13
b c b 0.025 0.035 0.63 0.89
b2 0.030 0.045 0.76 1.14
e 0.005 (0.13) M C H b3 0.180 0.215 4.57 5.46
c 0.018 0.024 0.46 0.61
L2 [GAUGE] PLANE C SEATINGPLANE c2D 0.0180.235 0.0240.245 0.465.97 0.616.22
E 0.250 0.265 6.35 6.73
e 0.090 BSC 2.29 BSC
H 0.370 0.410 9.40 10.41
L A1 L 0.055 0.070 1.40 1.78
L1 L1 0.108 REF 2.74 REF
L2 0.020 BSC 0.51 BSC
DETAIL A L3 0.035 0.050 0.89 1.27
ROTATED 90 CW � L4 −−− 0.040 −−− 1.01
Z 0.155 −−− 3.93 −−−
SOLDERING FOOTPRINT* STYLE 2:PIN 1. GATE
2. DRAIN
6.20 3.00 3. SOURCE
4. DRAIN
0.244 0.118
2.58
0.102
5.80
1.60 6.17
0.228
0.063 0.243
SCALE 3:1
� inches [mm] �
**----- End of picture text -----**
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. **www.onsemi.com** **6** **NTD6416ANL, NVD6416ANL** ## **PACKAGE DIMENSIONS** **IPAK** CASE 369D ISSUE C **==> picture [186 x 171] intentionally omitted <==** **----- Start of picture text -----**
B C
V R E
4
a
A
S
1 2 3
−T−
SEATING
PLANE K
J
F
H
D 3 PL
G 0.13 (0.005) M T
**----- End of picture text -----**
**==> picture [158 x 186] intentionally omitted <==** **----- Start of picture text -----**
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES MILLIMETERS
Z DIM MIN MAX MIN MAX
A 0.235 0.245 5.97 6.35
B 0.250 0.265 6.35 6.73
C 0.086 0.094 2.19 2.38
D 0.027 0.035 0.69 0.88
E 0.018 0.023 0.46 0.58
F 0.037 0.045 0.94 1.14
G 0.090 BSC 2.29 BSC
H 0.034 0.040 0.87 1.01
J 0.018 0.023 0.46 0.58
K 0.350 0.380 8.89 9.65
R 0.180 0.215 4.45 5.45
S 0.025 0.040 0.63 1.01
V 0.035 0.050 0.89 1.27
Z 0.155 −−− 3.93 −−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
**----- End of picture text -----**
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