# Power MOSFET, N Channel, 100 V, 23 A, 0.044 ohm, TO-252 (DPAK), Surface Mount ![Product image](https://novapart.co/image/farnell:2724411RL/) **URL**: https://novapart.co/products/NTD6415ANLT4G/power-mosfet-n-channel-100-v-23-a-0044-ohm-to-252 **SKU**: NTD6415ANLT4G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.7720 **Stock**: 1000+ **Lead Time**: 148 days (indicative) ## Description Transistor Polarity:N Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.044ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:2V; Pow ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 3Pins | | Channel Type | N Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 83W | | Transistor Mounting | Surface Mount | | Rds(On) Test Voltage | 4.5V | | Transistor Case Style | TO-252 (DPAK) | | Drain Source Voltage Vds | 100V | | Operating Temperature Max | 175°C | | Continuous Drain Current Id | 23A | | Drain Source On State Resistance | 0.044ohm | | Gate Source Threshold Voltage Max | 2V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2724411RL/) ## MOSFET – Power, N-Channel, Logic Level 100 V, 23 A, 56 m ## NTD6415ANL, NVD6415ANL ## **Features** - Low RDS(on) ## **www.onsemi.com** - 100% Avalanche Tested - NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable Unique Site and Control Change Requirements; AEC−Q101 **V(BR)DSS RDS(on) MAX ID MAX** Qualified and PPAP Capable 56 m @ 4.5 V • These Devices are Pb−Free and are RoHS Compliant ~~eee~~ 100 V 52 m @ 10 V 23 A **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) D ~~a~~ **Parameter Symbol Value Unit** Drain−to−Source Voltage VDSS 100 V ~~a~~ Gate−to−Source Voltage − Continuous VGS 20 V G Continuous Drain Steady TC = 25 ° C ID 23 A Current State ~~ooa~~ Power Dissipation ~~ee~~ Steady TTCC = 100 = 25 °° CC PD ~~ee~~ 1683 W ~~4~~ S State 4 ~~eeee ee~~ Pulsed Drain Current tp = 10 s IDM 80 A ~~EEE~~ Operating and Storage Temperature Range TJ, Tstg −55 to ° C 1 >[2] 3 +175 ~~ee~~ **DPAK** Source Current (Body Diode) IS 23 A **CASE 369AA STYLE 2** Single Pulse Drain−to−Source Avalanche EAS 79 mJ Energy (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 23 A, L = 0.3 mH, RG = 25 ) **MARKING DIAGRAM** ~~res~~ Lead Temperature for Soldering ~~[ae] ee~~ TL 260 ° C **& PIN ASSIGNMENT** Purposes, 1/8 ″ from Case for 10 Seconds ~~Se~~ 4 Drain **THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit** Junction−to−Case (Drain) − Steady State R JC 1.8 ° C/W Junction−to−Ambient − Steady State (Note 1) R JA 49 1 3 ~~**a**~~ Gate ~~.~~ 2 Source Stresses exceeding those listed in the Maximum Ratings table may damage the Drain device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. A **==> picture [116 x 128] intentionally omitted <==** **----- Start of picture text -----**
1 3
Gate . 2 Source
Drain
A = Assembly Location*
6415ANL = Device Code
Y = Year
WW = Work Week
G = Pb−Free Package
AYWW 64 15ANLG
**----- End of picture text -----**
1. Surface mounted on FR4 board using 1 sq in pad size, (Cu Area 1.127 sq in [2 oz] including traces). * The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package, the front side assembly code may be blank. ## **ORDERING INFORMATION** See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Publication Order Number: **NTD6415ANL/D** **1** © Semiconductor Components Industries, LLC, 2016 **March, 2020− Rev. 6** ## **NTD6415ANL, NVD6415ANL** **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTIC**|**S**(TJ= 25°C u|nless otherwise noted)|nless otherwise noted)||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||||| |Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID= 250�A
VGS= 0 V, ID= 250�A, TJ= −40°C||100
92|||V| |Drain−to−Source Breakdown Voltage
Temperature Coefficient|V(BR)DSS/TJ||||115||mV/°C| |Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,
VDS= 100 V|TJ= 25°C|||1.0|�A| ||||TJ= 125°C|||100|| |Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS=|�20 V|||�100|nA| |**ON CHARACTERISTICS**(Note 2)|||||||| |Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= 250�A||1.0||2.0|V| |Negative Threshold Temperature
Coefficient|VGS(TH)/TJ||||4.8||mV/°C| |Drain−to−Source On−Resistance|RDS(on)|VGS= 4.5 V, ID= 10 A|||44|56|m�| |||VGS= 10 V, ID= 10 A|||43|52|| |Forward Transconductance|gFS|VDS= 5.0 V, ID= 10 A|||24||S| |**CHARGES, CAPACITANCES AND GATE RESISTANCE**|||||||| |Input Capacitance|CISS|VGS= 0 V, f = 1.0 MHz, VDS= 25 V|||1024||pF| |Output Capacitance|COSS||||156||| |Reverse Transfer Capacitance|CRSS||||70||| |Total Gate Charge|QG(TOT)|VGS= 4.5 V, VDS= 80 V, ID= 23 A|||20||nC| |Threshold Gate Charge|QG(TH)||||1.1||| |Gate−to−Source Charge|QGS||||3.1||| |Gate−to−Drain Charge|QGD||||14||| |Total Gate Charge|QG(TOT)|VGS= 10 V, VDS= 80 V, ID= 23 A|||35||nC| |**SWITCHING CHARACTERISTICS**(Note 3)|||||||| |Turn−On Delay Time|td(on)|VGS= 4.5 V, VDD= 80 V,
ID= 23 A, RG= 6.1�|||11||ns| |Rise Time|tr||||91||| |Turn−Off Delay Time|td(off)||||40||| |Fall Time|tf||||71||| |**DRAIN−SOURCE DIODE CHARACTERISTICS**|||||||| |Forward Diode Voltage|VSD|VGS= 0 V, IS= 23 A|TJ= 25°C||0.87|1.2|V| ||||TJ= 125°C||0.74||| |Reverse Recovery Time|tRR|VGS= 0 V, dIS/dt = 100 A/�s,
IS= 23 A|||64||ns| |Charge Time|Ta||||40||| |Discharge Time|Tb||||24||| |Reverse Recovery Charge|QRR||||152||nC| 2. Pulse Test: Pulse Width ≤ 300 � s, Duty Cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. ## **ORDERING INFORMATION** |**ORDERING INFORMATION**||| |---|---|---| |**Device**|**Package**|**Shipping**†| |NTD6415ANLT4G|DPAK
(Pb−Free)|2500 / Tape & Reel| |NVD6415ANLT4G||| |NVD6415ANLT4G−VF01||| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. **www.onsemi.com** **2** **NTD6415ANL, NVD6415ANL** ## **TYPICAL CHARACTERISTICS** **==> picture [493 x 605] intentionally omitted <==** **----- Start of picture text -----**
45 45
40 VGS = 10 V TJ = 25 ° C 40 VDS � 10 V
5 V 4 V 3.6 V
35 35
30 3.4 V 30
25 25
3.2 V
20 20
15 3.0 V 15 TJ = 25 ° C
10 2.8 V 10 TJ = 125 ° C
5 5 TJ = −55 ° C
0 0
0 1 2 3 4 5 1 2 3 4
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
0.050 0.050
ID = 23 A TJ = 25 ° C
TJ = 25 ° C
0.048 0.048
0.046 0.046
VGS = 4.5 V
0.044 0.044
VGS = 10 V
0.042 0.042
0.040 0.040
2 3 4 5 6 7 8 9 10 5 10 15 20 25
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 3. On−Region versus Gate Voltage Figure 4. On−Resistance versus Drain
Current and Gate Voltage
3.0 10000
I D = 23 A VGS = 0 V
VGS = 4.5 V
2.5
TJ = 150 ° C
2.0
1000
1.5 TJ = 125 ° C
1.0
0.5 100
−50 −25 0 25 50 75 100 125 150 175 10 20 30 40 50 60 70 80 90 100
TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current
Temperature versus Voltage
, DRAIN CURRENT (A) , DRAIN CURRENT (A)
ID ID
) � ) �
, DRAIN−TO−SOURCE RESISTANCE ( , DRAIN−TO−SOURCE RESISTANCE (
DS(on) DS(on)
R R
, LEAKAGE (nA)
(NORMALIZED)
IDSS
, DRAIN−TO−SOURCE RESISTANCE
DS(on)
R
**----- End of picture text -----**
**www.onsemi.com** **3** **NTD6415ANL, NVD6415ANL** ## **TYPICAL CHARACTERISTICS** **==> picture [493 x 609] intentionally omitted <==** **----- Start of picture text -----**
2500 10
TJ = 25 ° C QT
VGS = 0 V
2000 8
1500 6
1000 Ciss 4 Qds Q gs
500 2 VDS = 80 V
Crss ID = 23 A
Coss TJ = 25 ° C
0 0
0 10 20 30 40 50 60 70 80 90 100 0 5 10 15 20 25 30 35
VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage and
Drain−to−Source Voltage versus Total Charge
1000 25
VDS = 80 V TJ = 25 ° C
ID = 23 A VGS = 0 V
VGS = 4.5 V 20
100 tr
15
tf
td(off)
10
10
td(on)
5
1 0
1 10 100 0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95
RG, GATE RESISTANCE ( � ) VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage versus
versus Gate Resistance Current
100 125
ID = 23 A
100
10
75
10 � s
VGS ≤ 10 V 1001 ms � s 50
1 SINGLE PULSE
TC = 25 ° C 10 m s
RDS(on) LIMIT 25
THERMAL LIMIT
PACKAGE LIMIT dc
0.1 0
0.1 1 10 100 25 50 75 100 125 150 175
VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE
Figure 11. Maximum Rated Forward Biased Figure 12. Maximum Avalanche Energy versus
Safe Operating Area Starting Junction Temperature
C, CAPACITANCE (pF)
, GATE−TO−SOURCE VOLTAGE (V)
GS
V
t, TIME (ns)
, SOURCE CURRENT (A)
IS
, DRAIN CURRENT (A)
ID
AVALANCHE ENERGY (mJ)
**----- End of picture text -----**
**www.onsemi.com** **4** ## **NTD6415ANL, NVD6415ANL** ## **TYPICAL CHARACTERISTICS** **==> picture [492 x 180] intentionally omitted <==** **----- Start of picture text -----**
100
Duty Cycle = 0.5
0.2
10
0.1
0.05
0.02
1
0.01
0.1
SINGLE PULSE
0.01
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t, PULSE TIME (s)
Figure 13. Thermal Response
C/W) EFFECTIVE TRANSIENT
( ° THERMAL RESISTANCE
JC(t)
�
R
**----- End of picture text -----**
**www.onsemi.com** **5** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [480 x 513] intentionally omitted <==** **----- Start of picture text -----**
4 DPAK (SINGLE GUAGE)
CASE 369AA−01
ISSUE B
1 > [2]
DATE 03 JUN 2010
3
SCALE 1:1 NOTES:
C 1. DIMENSIONING AND TOLERANCING PER ASME
A Y14.5M, 1994.
E A 2.3. CONTROLLING DIMENSION: INCHES.THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
b3 B c2 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
L3 i 4 Z 5. DIMENSIONS D AND E ARE DETERMINED AT THEOUTERMOST EXTREMES OF THE PLASTIC BODY.
1 2 3 D DETAIL A H 6. DATUMS A AND B ARE DETERMINED AT DATUMPLANE H.
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
L4 A 0.086 0.094 2.18 2.38
b2 A1 0.000 0.005 0.00 0.13
b c b 0.025 0.035 0.63 0.89
b2 0.030 0.045 0.76 1.14
e e 0.005 (0.13) y M C H ee b3 0.180 0.215 4.57 5.46
c 0.018 0.024 0.46 0.61
L2 [GAUGE] PLANE C SEATINGPLANE c2D 0.0180.235 0.0240.245 0.465.97 0.616.22
E 0.250 0.265 6.35 6.73
e 0.090 BSC 2.29 BSC
H 0.370 0.410 9.40 10.41
L A1 L 0.055 0.070 1.40 1.78
L1 L1 0.108 REF 2.74 REF
L2 0.020 BSC 0.51 BSC
DETAIL A L3 0.035 0.050 0.89 1.27
ROTATED 9 CW L4 −−− 0.040 −−− 1.01
Z 0.155 −−− 3.93 −−−
STYLE 1: STYLE 2: STYLE 3: STYLE 4:
PIN 1.2. COLLECTORBASE PIN 1.2. DRAINGATE PIN 1.2. CATHODEANODE PIN 1.2. ANODECATHODE GENERIC
3. EMITTER 3. SOURCE 3. ANODE 3. GATE MARKING DIAGRAM*
4. COLLECTOR 4. DRAIN 4. CATHODE 4. ANODE
STYLE 5: STYLE 6: STYLE 7:
PIN 1. GATE PIN 1. MT1 PIN 1. GATE XXXXXXG YWW
2. ANODE 2. MT2 2. COLLECTOR
3. CATHODE 3. GATE 3. EMITTER ALYWW XXX
4. ANODE 4. MT2 4. COLLECTOR XXXXXG
SOLDERING FOOTPRINT* AD
IC Discrete
6.20 3.00
0.244 0.118 XXXXXX = Device Code
2.58 A = Assembly Location
0.102 L = Wafer Lot
Y = Year
5.80 WW = Work Week
1.60 6.17
0.228 0.063 0.243 G = Pb−Free Package
*This information is generic. Please refer
jae
to device data sheet for actual part
marking.
SCALE 3:1 mm
inches
**----- End of picture text -----**
- *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON13126D** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DESCRIPTION: DPAK (SINGLE GAUGE) PAGE 1 OF 1** ~~ee~~ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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