# Power MOSFET, N Channel, 60 V, 98 A, 4400 µohm, TO-252 (DPAK), Surface Mount ![Product image](https://novapart.co/image/farnell:2845375/) **URL**: https://novapart.co/products/NTD5862NT4G/power-mosfet-n-channel-60-v-98-a-4400-ohm-to-252 **SKU**: NTD5862NT4G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.5690 **Stock**: 10+ ## Description Transistor Polarity:N Channel; Continuous Drain Current Id:98A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0044ohm; Available until stocks are exhausted Alternative available ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (15-Jan-2018) | | No. Of Pins | 3Pins | | Channel Type | N Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 115W | | Transistor Mounting | Surface Mount | | Rds(On) Test Voltage | 10V | | Transistor Case Style | TO-252 (DPAK) | | Drain Source Voltage Vds | 60V | | Operating Temperature Max | 175°C | | Continuous Drain Current Id | 98A | | Drain Source On State Resistance | 4400µohm | | Gate Source Threshold Voltage Max | 4V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2845375/) ## NTD5862N, NTP5862N N-Channel Power MOSFET 60 V, 98 A, 5.7 m Q) ## **Features** - Low RDS(on) **==> picture [495 x 473] intentionally omitted <==** **----- Start of picture text -----**
• High Current Capability www.onsemi.com
• 100% Avalanche Tested
• These Devices are Pb−Free, Halogen Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX
60 V 5.7 m @ 10 V 98 A
ee
MAXIMUM RATINGS (TJ = 25 ° C unless otherwise noted) D
a Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 60 V N−Channel
Gate−to−Source Voltage − Continuous VGS ± 20 V G
Gate−to−Source Voltage VGS ± 30 V
ss − Non−Repetitive (tp < 10 s) me) S
Continuous Drain TC = 25 ° C ID 98 A 4
rs (Note 1)Current (R JC) Steady TC = 100 ° C ee 69 4
State
Power Dissipation TC = 25 ° C PD 115 W 4
(R JC)
Fr»,a Pulsed Drain Current tp = 10 s IDM 335 A 1 [2] 1 ® §!
Operating Junction and Storage Temperature TJ, Tstg −55 to ° C 3 2 3 123
175 DPAK IPAK TO−220
Po
CASE 369C CASE 369D CASE 221A
Source Current (Body Diode) IS 96 A
a STYLE 2 STYLE 2 STYLE 5
Single Pulse Drain−to−Source Avalanche EAS 205 mJ
Energy (L = 0.3 mH) MARKING DIAGRAMS
ee Lead Temperature for Soldering Purposes TL ee 260 ° C & PIN ASSIGNMENT
(1/8 ″ from case for 10 s) 4
ee
ee ee 4 4 Drain
Stresses exceeding those listed in the Maximum Ratings table may damage the Drain Drain
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
NTP
Parameter Symbol Value Unit 5862NG
Junction−to−Case (Drain) R JC 1.3 ° C/W 1 Drain2 3 1 AYWW 3
Junction−to−Ambient − Steady State (Note 2) R JA 37 Gate = Source M7 Gate oO. Source
1. ——— Limited by package to 50 A continuous. 1 2 3 wwTT
2. Surface−mounted on FR4 board using 1 in sq pad size Gate Drain Source 2
(Cu area = 1.127 in sq [2 oz] including traces. Drain
A = Assembly Location*
Y = Year
WW = Work Week
5862N = Device Code
G = Pb−Free Package
AYWW 58 62NG AYWW 58 62NG
**----- End of picture text -----**
* The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package, the front side assembly code may be blank. ## **ORDERING INFORMATION** See detailed ordering and shipping information on page 5 of this data sheet. Publication Order Number: **NTD5862N/D** **1** © Semiconductor Components Industries, LLC, 2015 **January, 2015 − Rev. 4** **NTD5862N, NTP5862N** ## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTIC**|**S **(TJ= 25°C un|less otherwise noted)|less otherwise noted)||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||||| |Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID=|250�A|60|||V| |Drain−to−Source Breakdown Voltage
Temperature Coefficient|V(BR)DSS/TJ||||47||mV/°C| |Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,
VDS= 60 V|TJ= 25°C|||1.0|�A| ||||TJ= 150°C|||100|| |Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS=±20 V||||±100|nA| |**ON CHARACTERISTICS**(Note 3)|||||||| |Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= 250�A||2.0||4.0|V| |Threshold Temperature Coefficient|VGS(TH)/TJ||||−9.7||mV/°C| |Drain−to−Source On Resistance|RDS(on)|VGS= 10 V, ID= 45 A|||4.4|5.7|m�| |Forward Transconductance|gFS|VDS= 15 V, ID= 10 A|||18||S| |**CHARGES, CAPACITANCES AND GATE RESISTANCES**|||||||| |Input Capacitance|Ciss|VGS= 0 V, f = 1.0 MHz,
VDS= 25 V|||5050|6000|pF| |Output Capacitance|Coss||||500|600|| |Reverse Transfer Capacitance|Crss||||300|420|| |Total Gate Charge|QG(TOT)|VGS= 10 V, VDS= 48 V,
ID= 45 A|||82||nC| |Threshold Gate Charge|QG(TH)||||5.2||| |Gate−to−Source Charge|QGS||||24||| |Gate−to−Drain Charge|QGD||||27||| |Gate Resistance|RG||||0.6||�| |**SWITCHING CHARACTERISTICS**(Note 4)|||||||| |Turn−On Delay Time|td(on)|VGS= 10 V, VDD= 48 V,
ID= 45 A, RG= 2.5�|||18||ns| |Rise Time|tr||||70||| |Turn−Off Delay Time|td(off)||||35||| |Fall Time|tf||||60||| |**DRAIN−SOURCE DIODE CHARACTERISTICS**|||||||| |Forward Diode Voltage|VSD|VGS= 0 V,
IS= 45 A|TJ= 25°C||0.9|1.2|V| ||||TJ= 100°C||0.75||| |Reverse Recovery Time|tRR|VGS= 0 V, dIs/dt
IS= 45|= 100 A/�s,
A||38||ns| |Charge Time|ta||||20||| |Discharge Time|tb||||18||| |Reverse Recovery Charge|QRR||||40||nC| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width ≤ 300 � s, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. **www.onsemi.com** **2** **NTD5862N, NTP5862N** ## **TYPICAL CHARACTERISTICS** **==> picture [491 x 638] intentionally omitted <==** **----- Start of picture text -----**
200 200
TJ = 25 ° C VGS = 10 V 180 VDS ≥ 5 V
6.2 V
160 160
6.0 V
140
120 5.8 V 120
100
5.6 V
80 80
60 TJ = 25 ° C
40 5.2 V 40
20 T J = 125 ° C TJ = −55 ° C
0 0
0 1 2 3 4 5 3 4 5 6 7
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
0.030 0.006
0.025 TIDJ = 25 = 45 A ° C VTGSJ = 25 = 10 V ° C
0.020 0.005
0.015
0.010 0.004
0.005
0.000 0.003
4 5 6 7 8 9 10 10 20 30 40 50 60 70 80 90 100
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate Voltage Figure 4. On−Resistance vs. Drain Current
2.2 100000
2.0 ID = 45 A VGS = 0 V
VGS = 10 V
1.8
TJ = 150 ° C
1.6
1.4 10000
1.2
1.0 TJ = 125 ° C
0.8
0.6 1000
−50 −25 0 25 50 75 100 125 150 175 10 20 30 40 50 60
TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current
Temperature vs. Voltage
, DRAIN CURRENT (A)
ID , DRAIN CURRENT (A)
ID
) � ) �
, DRAIN−TO−SOURCE RESISTANCE ( , DRAIN−TO−SOURCE RESISTANCE (
DS(on) DS(on)
R R
, LEAKAGE (nA)
IDSS
, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
DS(on)
R
**----- End of picture text -----**
**www.onsemi.com** **3** **NTD5862N, NTP5862N** ## **TYPICAL CHARACTERISTICS** **==> picture [490 x 175] intentionally omitted <==** **----- Start of picture text -----**
6000 10
5000 Ciss VTJGS = 25 = 0 V ° C 9 QT
8
7
4000
6
Q gs Q gd
3000 5
4
2000
3
10000 Crss Coss 210 T V IDJ DS = 45 A = 25 = 48 V ° C
0 10 20 30 40 50 60 0 10 20 30 40 50 60 70 80 90
VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)
C, CAPACITANCE (pF)
, GATE−TO−SOURCE VOLTAGE (V)
GS
V
**----- End of picture text -----**
**Figure 7. Capacitance Variation** **Figure 8. Gate−to−Source vs. Total Charge** **==> picture [493 x 400] intentionally omitted <==** **----- Start of picture text -----**
1000 100
VDD = 48 V VGS = 0 V
ID = 45 A TJ = 25 ° C
VGS = 10 V 80
100 tr
tf td(on) 60
td(off)
40
10
20
1 0
1 10 100 0.50 0.60 0.70 0.80 0.90 1.00 1.10
RG, GATE RESISTANCE ( � ) VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current
vs. Gate Resistance
1000 225
1 ms 100 � s 10 � s 200 ID = 37 A
10 ms
100 dc 175
150
125
10
100
VGS = 10 V
SINGLE PULSE 75
1 TC = 25 ° C
50
RDS(on) LIMIT
THERMAL LIMIT 25
PACKAGE LIMIT
0.1 0
0.1 1 10 100 25 50 75 100 125 150 175
VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE
t, TIME (ns)
, SOURCE CURRENT (A)
IS
, DRAIN CURRENT (A)
ID
AVALANCHE ENERGY (mJ)
**----- End of picture text -----**
**Figure 11. Maximum Rated Forward Biased Safe Operating Area** **Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature** **www.onsemi.com** **4** **NTD5862N, NTP5862N** ## **TYPICAL CHARACTERISTICS** **==> picture [491 x 186] intentionally omitted <==** **----- Start of picture text -----**
10
1 Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10
t, PULSE TIME (s)
Figure 13. Thermal Response
C/W) EFFECTIVE TRANSIENT
( ° THERMAL RESISTANCE
JC(t)
�
R
**----- End of picture text -----**
## **ORDERING INFORMATION** |**ORDERING INFORMATION**||| |---|---|---| |**Order Number**|**Package**|**Shipping**†| |NTD5862N−1G|IPAK (Straight Lead)
(Pb−Free)|75 Units / Rail| |NTD5862NT4G|DPAK
(Pb−Free)|2500 / Tape & Reel| |NTP5862NG|TO−220
(Pb−Free)|50 Units / Rail| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. **www.onsemi.com** **5** **NTD5862N, NTP5862N** ## **PACKAGE DIMENSIONS** **TO−220** CASE 221A−09 ISSUE AH **==> picture [234 x 186] intentionally omitted <==** **----- Start of picture text -----**
SEATING
−T− PLANE
B F C
T S
4
Q A
1 2 3 U
H
K
Z
L R
V J
G
D
N
**----- End of picture text -----**
|NOT
1.
2.
3.|STYLE 5:
PIN 1.
GATE
2.
DRAIN
3.
SOURCE
4.
DRAIN
ES:
DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
CONTROLLING DIMENSION: INCH.
DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
**DIM**
**MIN**
**MAX**
**MIN**
**MAX**
**MILLIMETERS**
**INCHES**
**A**
0.570
0.620
14.48
15.75
**B**
0.380
0.415
9.66
10.53
**C**
0.160
0.190
4.07
4.83
**D**
0.025
0.038
0.64
0.96
**F**
0.142
0.161
3.61
4.09
**G**
0.095
0.105
2.42
2.66
**H**
0.110
0.161
2.80
4.10
**J**
0.014
0.024
0.36
0.61
**K**
0.500
0.562
12.70
14.27
**L**
0.045
0.060
1.15
1.52
**N**
0.190
0.210
4.83
5.33
**Q**
0.100
0.120
2.54
3.04
**R**
0.080
0.110
2.04
2.79
**S**
0.045
0.055
1.15
1.39
**T**
0.235
0.255
5.97
6.47
**U**
0.000
0.050
0.00
1.27
**V**
0.045
---
1.15
---
**Z**
---
0.080
---
2.04|STYLE 5:
PIN 1.
GATE
2.
DRAIN
3.
SOURCE
4.
DRAIN
ES:
DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
CONTROLLING DIMENSION: INCH.
DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
**DIM**
**MIN**
**MAX**
**MIN**
**MAX**
**MILLIMETERS**
**INCHES**
**A**
0.570
0.620
14.48
15.75
**B**
0.380
0.415
9.66
10.53
**C**
0.160
0.190
4.07
4.83
**D**
0.025
0.038
0.64
0.96
**F**
0.142
0.161
3.61
4.09
**G**
0.095
0.105
2.42
2.66
**H**
0.110
0.161
2.80
4.10
**J**
0.014
0.024
0.36
0.61
**K**
0.500
0.562
12.70
14.27
**L**
0.045
0.060
1.15
1.52
**N**
0.190
0.210
4.83
5.33
**Q**
0.100
0.120
2.54
3.04
**R**
0.080
0.110
2.04
2.79
**S**
0.045
0.055
1.15
1.39
**T**
0.235
0.255
5.97
6.47
**U**
0.000
0.050
0.00
1.27
**V**
0.045
---
1.15
---
**Z**
---
0.080
---
2.04|STYLE 5:
PIN 1.
GATE
2.
DRAIN
3.
SOURCE
4.
DRAIN
ES:
DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
CONTROLLING DIMENSION: INCH.
DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
**DIM**
**MIN**
**MAX**
**MIN**
**MAX**
**MILLIMETERS**
**INCHES**
**A**
0.570
0.620
14.48
15.75
**B**
0.380
0.415
9.66
10.53
**C**
0.160
0.190
4.07
4.83
**D**
0.025
0.038
0.64
0.96
**F**
0.142
0.161
3.61
4.09
**G**
0.095
0.105
2.42
2.66
**H**
0.110
0.161
2.80
4.10
**J**
0.014
0.024
0.36
0.61
**K**
0.500
0.562
12.70
14.27
**L**
0.045
0.060
1.15
1.52
**N**
0.190
0.210
4.83
5.33
**Q**
0.100
0.120
2.54
3.04
**R**
0.080
0.110
2.04
2.79
**S**
0.045
0.055
1.15
1.39
**T**
0.235
0.255
5.97
6.47
**U**
0.000
0.050
0.00
1.27
**V**
0.045
---
1.15
---
**Z**
---
0.080
---
2.04|STYLE 5:
PIN 1.
GATE
2.
DRAIN
3.
SOURCE
4.
DRAIN
ES:
DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
CONTROLLING DIMENSION: INCH.
DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
**DIM**
**MIN**
**MAX**
**MIN**
**MAX**
**MILLIMETERS**
**INCHES**
**A**
0.570
0.620
14.48
15.75
**B**
0.380
0.415
9.66
10.53
**C**
0.160
0.190
4.07
4.83
**D**
0.025
0.038
0.64
0.96
**F**
0.142
0.161
3.61
4.09
**G**
0.095
0.105
2.42
2.66
**H**
0.110
0.161
2.80
4.10
**J**
0.014
0.024
0.36
0.61
**K**
0.500
0.562
12.70
14.27
**L**
0.045
0.060
1.15
1.52
**N**
0.190
0.210
4.83
5.33
**Q**
0.100
0.120
2.54
3.04
**R**
0.080
0.110
2.04
2.79
**S**
0.045
0.055
1.15
1.39
**T**
0.235
0.255
5.97
6.47
**U**
0.000
0.050
0.00
1.27
**V**
0.045
---
1.15
---
**Z**
---
0.080
---
2.04|STYLE 5:
PIN 1.
GATE
2.
DRAIN
3.
SOURCE
4.
DRAIN
ES:
DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
CONTROLLING DIMENSION: INCH.
DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
**DIM**
**MIN**
**MAX**
**MIN**
**MAX**
**MILLIMETERS**
**INCHES**
**A**
0.570
0.620
14.48
15.75
**B**
0.380
0.415
9.66
10.53
**C**
0.160
0.190
4.07
4.83
**D**
0.025
0.038
0.64
0.96
**F**
0.142
0.161
3.61
4.09
**G**
0.095
0.105
2.42
2.66
**H**
0.110
0.161
2.80
4.10
**J**
0.014
0.024
0.36
0.61
**K**
0.500
0.562
12.70
14.27
**L**
0.045
0.060
1.15
1.52
**N**
0.190
0.210
4.83
5.33
**Q**
0.100
0.120
2.54
3.04
**R**
0.080
0.110
2.04
2.79
**S**
0.045
0.055
1.15
1.39
**T**
0.235
0.255
5.97
6.47
**U**
0.000
0.050
0.00
1.27
**V**
0.045
---
1.15
---
**Z**
---
0.080
---
2.04| |---|---|---|---|---|---| ||**DIM**|**INCHES**||**MILLIMETERS**|| |||**MIN**
|**MAX**
|**MIN**
|**MAX**
| ||**A**|0.570|0.620|14.48|15.75| ||**B**|0380|0415|966|1053| ||**C**|.
0.160|.
0.190|.
4.07|.
4.83| ||**D**|0.025|0.038|0.64|0.96| ||**F**|0.142|0.161|3.61|4.09| ||**G**|0.095|0.105|2.42|2.66| ||**H**|0.110|0.161|2.80|4.10| ||**J**|0.014|0.024|0.36|0.61| ||**K**|0.500|0.562|12.70|14.27| ||**L**|0.045|0.060|1.15|1.52| ||**N**|0.190|0.210|4.83|5.33| ||**Q**|0100|0120|254|304| ||**R**|.
0.080|.
0.110|.
2.04|.
2.79| ||**S**|0045|0055|115|139| ||**T**|.
0.235|.
0.255|.
5.97|.
6.47| ||**U**|0.000|0.050|0.00|1.27| ||**V**|0.045|---|1.15|---| ||**Z**|---|0.080|---|2.04| ||STYL
PI||||| **IPAK** CASE 369D ISSUE C **==> picture [432 x 194] intentionally omitted <==** **----- Start of picture text -----**
B C NOTES:
1. DIMENSIONING AND TOLERANCING PER
V R E ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES MILLIMETERS
4 Z DIM MIN MAX MIN MAX
A 0.235 0.245 5.97 6.35
S A B 0.250 0.265 6.35 6.73
1 2 3 C 0.086 0.094 2.19 2.38
D 0.027 0.035 0.69 0.88
E 0.018 0.023 0.46 0.58
−T− F 0.037 0.045 0.94 1.14
SEATING G 0.090 BSC 2.29 BSC
PLANE K H 0.034 0.040 0.87 1.01
J 0.018 0.023 0.46 0.58
K 0.350 0.380 8.89 9.65
R 0.180 0.215 4.45 5.45
J S 0.025 0.040 0.63 1.01
F
H V 0.035 0.050 0.89 1.27
Z 0.155 −−− 3.93 −−−
D 3 PL
G 0.13 (0.005) M T STYLE 2:PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
**----- End of picture text -----**
**www.onsemi.com** **6** **NTD5862N, NTP5862N** ## **PACKAGE DIMENSIONS** **DPAK (SINGLE GAUGE)** CASE 369C ISSUE E **==> picture [484 x 418] intentionally omitted <==** **----- Start of picture text -----**
NOTES:
A 1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
E C 2. CONTROLLING DIMENSION: INCHES.
A 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
b3 B c2 4. DIMENSIONS D AND E DO NOT INCLUDE MOLDMENSIONS b3, L3 and Z.
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
4 NOT EXCEED 0.006 INCHES PER SIDE.
L3 bale ve Z Z 5. DIMENSIONS D AND E ARE DETERMINED AT THE
D DETAIL A H 6. DATUMS A AND B ARE DETERMINED AT DATUMOUTERMOST EXTREMES OF THE PLASTIC BODY.
1 2 3 PLANE H.
7. OPTIONAL MOLD FEATURE.
L4 NOTE 7 DIM MININCHESMAX MILLIMETERSMIN MAX
b2 c BOTTOM VIEW BOTTOM VIEW A 0.086 0.094 2.18 2.38
e b SIDE VIEW CONSTRUCTIONALTERNATE A1b 0.0000.025 0.0050.035 0.000.63 0.130.89
TOP VIEW 0.005 (0.13) M C H b2b3 0.0280.180 0.0450.215 0.724.57 1.145.46
c 0.018 0.024 0.46 0.61
L2 [GAUGE] PLANE C SEATINGPLANE c2D 0.0180.235 0.0240.245 0.465.97 0.616.22
E 0.250 0.265 6.35 6.73
e 0.090 BSC 2.29 BSC
L H 0.370 0.410 9.40 10.41
A1 L 0.055 0.070 1.40 1.78
L1 L1 0.114 REF 2.90 REF
DETAIL A L2 0.020 BSC 0.51 BSC
ROTATED 9 CW L3 0.035 0.050 0.89 1.27
L4 −−− 0.040 −−− 1.01
Z 0.155 −−− 3.93 −−−
STYLE 2:
SOLDERING FOOTPRINT* PIN 1. GATE
2. DRAIN
6.20 3.00 3.4. SOURCEDRAIN
0.244 0.118
2.58
PP
0.102
5.80
1.60 6.17
0.228
0.063 0.243
Ts"
SCALE 3:1 mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
**----- End of picture text -----**
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